CN202201967U - Blowing device during chemical vapor deposition of amorphous silicon thin film - Google Patents
Blowing device during chemical vapor deposition of amorphous silicon thin film Download PDFInfo
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- CN202201967U CN202201967U CN2011202849221U CN201120284922U CN202201967U CN 202201967 U CN202201967 U CN 202201967U CN 2011202849221 U CN2011202849221 U CN 2011202849221U CN 201120284922 U CN201120284922 U CN 201120284922U CN 202201967 U CN202201967 U CN 202201967U
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- amorphous silicon
- electrode box
- vapor deposition
- thin film
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Abstract
The utility model discloses a blowing device during chemical vapor deposition of an amorphous silicon thin film, which comprises an electrode box, wherein an air inlet hole of the electrode box is connected with a hydrogen (H2) distribution box through an air inlet pipeline, an air outlet hole of the electrode box is connected with a process pump through an exhaust pipeline, and pneumatic valves are arranged on both of the air inlet pipeline and the exhaust pipeline. By adopting the device, hydrogen blowing can be performed before coating of amorphous silicon, a microcrystalline silicon P layer and an I layer during vapor deposition, so that cross contamination of impurities is reduced, the process repeatability is improved; meanwhile, absent or necessary hydrogen atoms caused by covalent bond broken of silicon on interfaces of an intrinsic layer and the p layer or an n layer can be adjusted by hydrogen blowing, the interface states of the intrinsic layer and the P layer or the N layer are improved, and the light-induced attenuation of the amorphous silicon thin film is suppressed to a certain extent.
Description
Technical field
The utility model relates to electronics and solar battery technology, particularly a kind of device that in the chemical vapor deposition processes of amorphous silicon membrane, carries out the H2 purging.
Background technology
Amorphous silicon thin-film solar cell is that the bladder meridian connecting with nape that gets up of new development can the battery new technology in the world over more than 20 year.The silicon materials thickness of amorphous silicon thin-film solar cell has only about 1 micron, is the 1/200-1/300 of monocrystaline silicon solar cell silicon materials thickness, compares with monocrystaline silicon solar cell; Prepare the used silicon raw material of this film seldom; The film growth time is shorter, and device fabrication is simple, continuous production easily in enormous quantities; According to relevant expert's estimation in the world, amorphous silicon thin-film solar cell is the most promising solar cell that can reduce cost significantly at present.
Amorphous silicon material is formed by vapour deposition, has been plasma enhanced chemical vapor deposition (PECVD) method by the method that generally adopts at present.PECVD makes the ionization of gas that contains the film composed atom by microwave or radio frequency etc., form plasma body in the part, and the plasma chemical activity is very strong, is easy to react, and on substrate, deposits desired film.For chemical reaction can be carried out under lower temperature, utilized the activity of plasma body to promote reaction, thereby this CVD is called plasma enhanced chemical vapor deposition (PECVD).
Film chemical vapour deposition is the core process of the large-scale production of amorphous silicon membrane solar cell, and the nucleus equipment of realizing this technology is an electrode box.When carrying out film chemical vapour deposition, generally need the inlet mouth of electrode box be connected with a plurality of splitter fittings through different pipelines simultaneously at present, accomplish plated film according to the gaseous tension and the flow of different coatings control splitter fittings then.Present chemical vapor deposition method is easy to receive the crossed contamination of impurity in coating process, so its process repeatability is relatively poor, and then can cause certain influence to the photo attenuation property of amorphous silicon material.
The utility model content
To the deficiency of above-mentioned prior art, the technical problem that the utility model will solve provides and a kind ofly can improve chemical vapor deposition method repeatability, suppresses the device of amorphous silicon membrane photo attenuation property.
For solving the problems of the technologies described above, the utility model adopts following technical scheme:
A kind of amorphous silicon membrane chemical vapour deposition blow device; Comprise an electrode box; The inlet mouth of said electrode box is connected with a H2 splitter fitting through an intake ducting; The air outlet of said electrode box is connected with a technology pump through a gas exhaust duct, is equipped with pneumavalve on said intake ducting, the gas exhaust duct.
Preferably, the inlet mouth of said electrode box, place, air outlet are equipped with uniform gas board.
Preferably, said electrode box is single chamber multilayered structure.
Preferably, also be provided with relief valve and manual diaphragm valve on the said intake ducting.
Technique scheme has following beneficial effect: adopt this device before non-crystalline silicon, microcrystal silicon P and I layer plated film, to carry out hydrogen purge when carrying out vapour deposition, thereby reduce the impurity crossed contamination, improve process repeatability; The silicon that carries out hydrogen purge adjustable intrinsic layer and p or n layer interface is simultaneously interrupted vacancy that covalent linkage produces or unnecessary Wasserstoffatoms, improves the interfacial state of intrinsic layer and P or N layer, suppresses the photo attenuation property of amorphous silicon membrane to a certain extent.
Above-mentioned explanation only is the general introduction of the utility model technical scheme, in order more to know the technique means of understanding the utility model, and can implement according to the content of specification sheets, below with the preferred embodiment of the utility model and conjunction with figs. specify as after.The embodiment of the utility model is provided by following examples and accompanying drawing thereof in detail.
Description of drawings
Fig. 1 is the structural representation of the utility model embodiment.
Embodiment
Describe in detail below in conjunction with the preferred embodiment of accompanying drawing to the utility model.
As shown in Figure 1, this amorphous silicon membrane chemical vapour deposition blow device comprises an electrode box 1, and this electrode box adopts single chamber multilayered structure.The inlet mouth 1 of electrode box is connected with a H2 splitter fitting 2 through an intake ducting 4; The air outlet of electrode box 1 is connected with a technology pump 3 through a gas exhaust duct 5; The inlet mouth of electrode box 1, place, air outlet are equipped with uniform gas board, can make air inlet, exhaust more even like this.Intake ducting 4 is provided with pneumavalve 7, relief valve 8 and manual diaphragm valve 9, and gas exhaust duct 5 is provided with pneumavalve 6.
In carrying out vapor deposition processes before non-crystalline silicon, microcrystal silicon P and I layer plated film; Can the pneumavalve on the intake ducting 47 be opened simultaneously the pneumavalve on the gas exhaust duct 56 cuts out inflation in electrode box 1; And then pneumavalve 7 cuts out, pneumavalve 6 is opened carried out exhaust, thereby accomplish the hydrogen purge in the counter electrode box 1.Through hydrogen purge, can reduce the impurity crossed contamination, improve process repeatability; The silicon that carries out hydrogen purge adjustable intrinsic layer and p or n layer interface is simultaneously interrupted vacancy that covalent linkage produces or unnecessary Wasserstoffatoms, improves the interfacial state of intrinsic layer and P or N layer, suppresses the photo attenuation property of amorphous silicon membrane to a certain extent.
More than amorphous silicon membrane chemical vapour deposition blow device that the utility model embodiment is provided carried out detailed introduction; For one of ordinary skill in the art; Thought according to the utility model embodiment; On embodiment and range of application, all can change to some extent; Therefore this description only is used for should not be construed as the restriction to the utility model in the utility model embodiment is described, and all any changes of being made according to the utility model design philosophy are all within the protection domain of the utility model.
Claims (4)
1. amorphous silicon membrane chemical vapour deposition blow device; Comprise an electrode box; It is characterized in that: the inlet mouth of said electrode box is connected with a H2 splitter fitting through an intake ducting; The air outlet of said electrode box is connected with a technology pump through a gas exhaust duct, is equipped with pneumavalve on said intake ducting, the gas exhaust duct.
2. amorphous silicon membrane chemical vapour deposition blow device according to claim 1 is characterized in that: the inlet mouth of said electrode box, place, air outlet are equipped with uniform gas board.
3. amorphous silicon membrane chemical vapour deposition blow device according to claim 1 is characterized in that: said electrode box is single chamber multilayered structure.
4. amorphous silicon membrane chemical vapour deposition blow device according to claim 1 is characterized in that: also be provided with relief valve and manual diaphragm valve on the said intake ducting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202849221U CN202201967U (en) | 2011-08-05 | 2011-08-05 | Blowing device during chemical vapor deposition of amorphous silicon thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202849221U CN202201967U (en) | 2011-08-05 | 2011-08-05 | Blowing device during chemical vapor deposition of amorphous silicon thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202201967U true CN202201967U (en) | 2012-04-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011202849221U Expired - Lifetime CN202201967U (en) | 2011-08-05 | 2011-08-05 | Blowing device during chemical vapor deposition of amorphous silicon thin film |
Country Status (1)
| Country | Link |
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| CN (1) | CN202201967U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112203778A (en) * | 2018-06-22 | 2021-01-08 | 林德有限责任公司 | Cylinder valve and method for inhibiting the formation of contaminants in a cylinder and a cylinder valve |
-
2011
- 2011-08-05 CN CN2011202849221U patent/CN202201967U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112203778A (en) * | 2018-06-22 | 2021-01-08 | 林德有限责任公司 | Cylinder valve and method for inhibiting the formation of contaminants in a cylinder and a cylinder valve |
| CN112203778B (en) * | 2018-06-22 | 2022-08-30 | 林德有限责任公司 | Cylinder valve and method for inhibiting the formation of contaminants in a cylinder and a cylinder valve |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120425 |