CN202159663U

CN202159663U - High-power light-emitting diode (LED) thick film integrated area light source

Info

Publication number: CN202159663U
Application number: CN2011202669695U
Authority: CN
Inventors: 李博; 贺立龙; 吕俊峰; 韩领社
Original assignee: Xi'an Chuanglian Electric Science And Technology (group) Co Ltd
Current assignee: Xi'an Chuanglian Electric Science And Technology (group) Co Ltd
Priority date: 2011-07-26
Filing date: 2011-07-26
Publication date: 2012-03-07
Anticipated expiration: 2021-07-26

Abstract

The utility model discloses a high-power light-emitting diode (LED) thick film integrated area light source. A ceramic substrate is welded on a red copper substrate by a carrying current; the back surface of the ceramic substrate is coated with silver paste; the ceramic substrate is pasted with a ceramic cover plate by using epoxy resin, and is provided with an LED chip; and the upper surface of the LED chip is provided with a transparent silicon grease layer. In the utility model, two groups of fifteen serial-connected light-emitting diodes are connected in parallel and are connected with a power supply by a back film connecting piece, and other two groups of fifteen series-connected light-emitting diodes are connected in parallel and then are connected with the power supply by a back film connecting piece to form the LED chip so as to improve the luminous efficiency and prolong the service life of a lamp. In comparison with existing LED integrated area light source, the utility model has the advantages of high insulativity, good heat-conduct effect, rapid and convenient circuit printing, simple encapsulation, low product cost, high luminous efficiency of light source, long service life of lamp and the like; and the high-power LED thick film integrated area light source can be used as the light source of a high-power LED lighting lamp.

Description

The integrated area source of great power LED thick film

Technical field

The utility model belongs to the luminescent device technical field, is specifically related to the light source of LED semi-conductor lighting lamp.

Background technology

Along with popularizing and development of LED semiconductor lighting, the demand of LED integrated optical source is also increasing, improves the heat conduction and heat radiation of LED integrated optical source, reduces packaging cost and becomes the focus that present technique field professional and technical personnel pays close attention to.The integrated area source of LED commonly used at present is packaged with stent-type and the integrated encapsulation dual mode of COB LED.Stand type LED integrated optical source package application is the most general; This light source is that led chip is encapsulated on the support, again the support array is welded on to form on the pcb board that adds to be electrically connected, and its reliability and insulating properties are better; But because its heat conduction intermediate link is many, thermal resistance is big; Therefore cause heat-conducting effect relatively poor, complex structure makes its technological requirement higher in addition.COB LED encapsulating structure is a main the development trend high-power in the future and encapsulation of super-high-power LED integrated optical source; It is a kind of led chip directly to be installed to the encapsulating structure on copper or the aluminium base; Characteristics with good heat conduction effect; But its substrate surface requires good insulating, increases the surface insulation treatment process, and the overall package cost is higher.

Summary of the invention

The utility model technical problem to be solved is to overcome the shortcoming of above-mentioned stand type LED integrated optical source and COB LED integrated optical source, and the integrated area source of great power LED thick film that a kind of thermal conductivity is good, insulation is reliable, encapsulation is simple, product cost is low is provided.

Solve the problems of the technologies described above the technical scheme that is adopted: on the red copper substrate, be welded with ceramic substrate through current-carrying; The ceramic substrate back side is covered with the silver slurry; Be pasted with ceramic cover plate with epoxy resin on the ceramic substrate; Ceramic substrate is provided with led chip, and the upper surface of led chip is provided with transparent silicone grease layer.

The led chip of the utility model is: light-emitting diode D1～light-emitting diode D15 series connection; Light-emitting diode D16～light-emitting diode D30 series connection; These two parts and the coupled arrangement triangle that meets at right angles is welded on the ceramic substrate; The positive pole of the positive pole of light-emitting diode D1 and light-emitting diode D16 connects the 50V positive source through the thick film brace, and the negative pole of the negative pole of light-emitting diode D15 and light-emitting diode D30 connects the 50V power cathode through the thick film brace; Light-emitting diode D31～light-emitting diode D45 series connection; Light-emitting diode D46～light-emitting diode D60 series connection; With these two parts and connect the townhouse row triangle that meets at right angles and be welded on the ceramic substrate; The positive pole of the positive pole of light-emitting diode D31 and light-emitting diode D46 connects the 50V positive source through the thick film brace, and the negative pole of the negative pole of light-emitting diode D45 and light-emitting diode D60 connects the 50V power cathode through the thick film brace.

The utility model employing connects two groups of 15 light-emitting diode parallel connections of connecting power supply, other two groups of series connection through the caudacoria brace 15 light-emitting diode parallel connections connect power supply formation led chip through the caudacoria brace; Improve the luminous efficiency of light source, prolonged the useful life of light fixture.The utility model is compared with the integrated area source of existing LED; Have insulating properties height, good heat conduction effect, circuit print efficient and convenient, encapsulation is simple, product cost is low; The luminous efficiency of light source is high, the advantages such as long service life of light fixture, can be used as the light source of high-power LED lighting fixture.

Description of drawings

Fig. 1 is the front view of an embodiment of the utility model.

Fig. 2 is the cutaway view of Fig. 1.

Fig. 3 is the layer printed circuit board sketch map of led chip 4.

Fig. 4 is the electronic circuit schematic diagram of led chip 4 among Fig. 1.

Embodiment

To the utility model further explain, but the utility model is not limited to these embodiment below in conjunction with accompanying drawing and embodiment.

Embodiment 1

In Fig. 1,2,3, the integrated area source of great power LED thick film of present embodiment is made up of ceramic cover plate 1, red copper substrate 2, led chip 4, transparent silicone grease layer 5,

ceramic substrate

6,7 connections of thick film brace.

Red copper substrate 2 be shaped as the disc structure, be uniformly distributed with on the red copper substrate 2 and be processed with 4 fixing threaded holes, be used for the utility model and other parts are fixedly connected; Be processed with 4 reflector hole clippings 3 on the red copper substrate 2 about XY shaft centre line symmetry; Light source red copper substrate 2 is handled through electronickelling, on red copper substrate 2, is welded with ceramic substrate 6 through current-carrying, is processed with 4 reflector hole clippings 3 about XY shaft centre line symmetry on the ceramic substrate 6; Ceramic substrate 6 back sides are covered with the silver slurry; Be pasted with ceramic cover plate 1 with epoxy resin on the ceramic substrate 6, ceramic cover plate 1 be shaped as butterfly, be processed with 4 reflector hole clippings 3 on the ceramic cover plate 1 about XY shaft centre line symmetry; 4 reflector hole clippings 3 communicate with 4 hole clippings on ceramic substrate 6, the red copper substrate 2, are used for placing and fixing peripheral reflector accessory.On the ceramic substrate 6; Adopt silk screen printing to be printed with thick film brace 7, pad, the solder joint of two-way independence controlled function; Be welded with led chip 4 on thick film brace 7, pad, the solder joint, the upper surface of led chip 4 is pasted with transparent silicone grease layer 5, and transparent silicone grease layer 5 is used to protect led chip 4.

In Fig. 4, the led chip 4 of present embodiment is connected and composed by light-emitting diode D1～light-emitting diode D60.Light-emitting diode D1～light-emitting diode D15 series connection; Light-emitting diode D16～light-emitting diode D30 series connection; These two parts and the coupled arrangement triangle that meets at right angles is welded on the ceramic substrate 6; The positive pole of the positive pole of light-emitting diode D 1 and light-emitting diode D16 connects the 50V positive source through thick film brace 7, and the negative pole of the negative pole of light-emitting diode D15 and light-emitting diode D30 connects the 50V power cathode through thick film brace 7.Light-emitting diode D31～light-emitting diode D45 series connection; Light-emitting diode D46～light-emitting diode D60 series connection; With these two parts and connect the townhouse row triangle that meets at right angles and be welded on the ceramic substrate 6; The positive pole of the positive pole of light-emitting diode D31 and light-emitting diode D46 connects the 50V positive source through thick film brace 7, and the negative pole of the negative pole of light-emitting diode D45 and light-emitting diode D60 connects the 50V power cathode through thick film brace 7.The integrated area source of great power LED thick film of this structure, the luminous efficiency of light source is high, the long service life of light fixture.

Claims

1. integrated area source of great power LED thick film; It is characterized in that: go up at red copper substrate (2) and be welded with ceramic substrate (6) through current-carrying; Ceramic substrate (6) back side is covered with the silver slurry; Ceramic substrate (6) goes up and is pasted with ceramic cover plate (1) with epoxy resin, and ceramic substrate (6) is provided with led chip (4), and the upper surface of led chip (4) is provided with transparent silicone grease layer (5).

2. according to the integrated area source of the described great power LED thick film of claim 1; It is characterized in that described led chip (4) is: light-emitting diode D1～light-emitting diode D15 series connection; Light-emitting diode D16～light-emitting diode D30 series connection; These two parts and the coupled arrangement triangle that meets at right angles is welded on the ceramic substrate (6); The positive pole of the positive pole of light-emitting diode D1 and light-emitting diode D16 connects the 50V positive source through thick film brace (7), and the negative pole of the negative pole of light-emitting diode D15 and light-emitting diode D30 connects the 50V power cathode through thick film brace (7); Light-emitting diode D31～light-emitting diode D45 series connection; Light-emitting diode D46～light-emitting diode D60 series connection; With these two parts and connect the townhouse row triangle that meets at right angles and be welded on the ceramic substrate (6); The positive pole of the positive pole of light-emitting diode D31 and light-emitting diode D46 connects the 50V positive source through thick film brace (7), and the negative pole of the negative pole of light-emitting diode D45 and light-emitting diode D60 connects the 50V power cathode through thick film brace (7).