CN202142770U - high-power semiconductor laser capable of outputting uniform laser spot in arbitrary shape - Google Patents
high-power semiconductor laser capable of outputting uniform laser spot in arbitrary shape Download PDFInfo
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- CN202142770U CN202142770U CN 201020598767 CN201020598767U CN202142770U CN 202142770 U CN202142770 U CN 202142770U CN 201020598767 CN201020598767 CN 201020598767 CN 201020598767 U CN201020598767 U CN 201020598767U CN 202142770 U CN202142770 U CN 202142770U
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Abstract
The utility model discloses a high-power semiconductor laser capable of outputting a uniform laser spot in an arbitrary shape and belongs to the technical field of laser. The utility model is characterized in that the size and the cross section shape of the laser spot can be arranged arbitrarily, so as to meet different laser application requirements. Semiconductor laser bars are piled up along a fast axis direction and laser beams output from the high-power semiconductor laser pile after fast axial collimation is reshaped, so as to obtain the output laser beams having fast and slow axis beams in homogenized quality. Then the reshaped laser beams are focused and sent to a glass rod. The geometric shape and the size of an end face of the glass rod is the same with the geometric shape and the size of an output laser spot to-be-obtained. Outgoing laser beam from the end face of the glass rod images on a surface to a to-be-acted object according to a scale required by an imaging lens (group), so as to obtain the uniform laser spot in an arbitrary shape and size meeting application requirements, thereby meeting the requirements of laser application.
Description
Technical field
The present invention relates to a kind of high power semiconductor lasers device of exportable arbitrary shape uniform light spots; This device adopts shaping glass bar and imaging len; Produce the uniform light spots that output laser facula size and shape of cross section can be provided with arbitrarily; To satisfy certain laser applications demand,, belong to laser technology field like Laser Surface Treatment, laser melting coating, laser welding etc.
Background technology
As everyone knows, laser is because power density is high, and the heat effect district is little, and materials processing is short action time, and process velocity is fast and workpiece do not had the effect of power, advantages such as the wearing and tearing of no cutter, therefore, the increasing material processing field that is applied to of laser.In the laser of processing usefulness, semiconductor laser has that volume is little, light weight, efficient is high, the life-span is long, stable, be fit to Optical Fiber Transmission and cost performance advantages of higher.The power of industrial semiconductor laser is greatly improved in nearest several years, and it is directly used also day by day becomes a focus, like the application on material processed.
Semiconductor laser special waveguiding structure has determined its output facula widely different at fast, slow-axis direction; Adopt the optical parameter product to describe the beam quality of semiconductor laser; The beam quality of fast axle is near diffraction limit; And the beam quality of slow axis is poor, and this makes semiconductor laser in commercial Application, receive very big restriction.Generally, the quick shaft direction angle of divergence of light beam is very big, and near 40 °, and the angle of divergence of slow-axis direction has only about 10 °.The big like this angle of divergence has limited its application in many occasions.Shaping methods commonly used at present is to the semiconductor laser beam reshaping; The light beams that adopt are cut apart, are made beam homogenization fast mode of resetting along slow axis more; Can make the fast and slow axis beche-de-mer without spike amass approximately equal through selecting light beam to cut apart number; Hot spot is a rectangle, the difference that this method to a certain extent can balanced fast and slow axis beam quality.But the uniformity of whole hot spot light distribution is still relatively poor.Therefore, need further shaping, satisfy in the laser commercial Application demand special hot spot.
Summary of the invention
The objective of the invention is to overcome the existing above-mentioned defective of spot shaping method in commercial Application, the high power semiconductor lasers device of the exportable arbitrary shape uniform light spots of a kind of structure is provided.Compare with existing systems, device of the present invention is simple, is easy to regulate.
The present invention adopts the fast and slow axis collimating mirror of coupling according to the output parameter of high power semiconductor lasers crust bar, obtains the output of quasi-parallel light.According to the beam quality on the fast and slow axis direction, light beam is carried out the n five equilibrium along slow-axis direction cut apart,
BPP wherein
Fast, BPP
SlowRepresent that respectively the fast and slow axis light beam parameters is long-pending, again hot spot is reset along quick shaft direction in this n section light beam counter-rotating back.Adopt coupled lens to focus on this hot spot enough little; Light beam coupling after the preliminary shaping is advanced the shaping glass bar, and total reflection takes place in light beam in the waveguiding structure of glass bar and air formation, make light beam mix the homogenize hot spot fully; At last, output to workpiece by imaging len.
The present invention adopts following technical scheme:
A kind of high power semiconductor lasers device of exportable arbitrary shape uniform light spots comprises semiconductor laser crust strip array 1, fast and slow axis collimating mirror 2, fast and slow axis optical beam transformation device 3, coupling focus lamp 4, shaping glass bar 5, imaging len 6, workbench 7.
Fast and slow axis collimating mirror 2 fast and slow axis of the laser of noise spectra of semiconductor lasers crust strip array 1 output respectively carries out the fast and slow axis collimation; Obtain quasi-parallel light; Through fast and slow axis optical beam transformation device 3 semiconductor laser being clung to bar again cuts apart along slow-axis direction; Pile up at quick shaft direction, shaping obtains the output laser beam of the preliminary homogenize of fast and slow axis beam quality.Laser beam after the shaping is focused into through coupled lens and is mapped to shaping glass bar 5; The total reflection transmission mixes in the waveguiding structure that glass bar 5 and air form, and the cross section of exporting the laser end at glass bar can obtain the equally distributed semiconductor laser hot spot of required form.At last, imaging len (6) is imaged onto the workpiece on the workbench 7 with the semiconductor laser of glass bar output end face.
The geometry of shaping glass bar 5 end faces and size with the geometry and the size of the output laser facula that will obtain identical.
The selection of the focal length of imaging len 6 can be satisfied thick, the thin plate different demands to the sharp keen length of laser.
The front focal plane of imaging len 6 overlaps with glass bar 5, and back focal plane overlaps with processing work center on the workbench 7.Like this, can the equally distributed semiconductor laser hot spot of the cross section laser intensity of glass bar 5 exit ends be imaged onto workpiece.Imaging len 6 can adopt long-focus to obtain the requirement that big sharp keen length satisfies slab processing.
Described imaging len is made up of two lens, and first lens, 8, the second lens 9 constitute set of lenses, and the focal length of two lens can be identical.The focal length of two lens also can be inequality.
The front focal plane of first lens 8 in the imaging len overlaps with the outgoing end face of glass bar 5, and the back focal plane of second lens 9 overlaps with processing work center on the workbench 7.Adopt two identical lens of focal length; Can be with the equally distributed semiconductor laser hot spot of the cross section laser intensity of glass bar 5 exit ends by being imaged onto workpiece at 1: 1; And can regulate axial distance between first lens 8 and second lens 9 easily; Play the effect of regulating the laser beam waist position, do not influence imaging facula.Also can adopt focal length two lens inequality; The equally distributed semiconductor laser hot spot of the cross section laser intensity of glass bar 5 exit ends is imaged onto workpiece by the ratio of two focal lengths of lens, same, can regulate two lens 8 easily; Axial distance between 9 does not influence imaging facula.
The semiconductor laser hot spot homogenizer that the present invention designed can solve the deficiency of existing semiconductor laser Material Used processing, has avoided the complexity of technology simultaneously.
Compare with the conventional semiconductor laser, the present invention can obtain following beneficial effect: laser facula can satisfy the conforming requirement of materials processing uniformly; The efficiency of transmission of simple homogenizer structure laser is higher, practices thrift cost, and easy to operate.
Description of drawings
The schematic diagram of the high power semiconductor lasers device of a kind of exportable arbitrary shape uniform light spots of Fig. 1.
A kind of structure chart of shaping glass bar in the high power semiconductor lasers device of a kind of exportable arbitrary shape uniform light spots of Fig. 2;
The another kind of structure chart of shaping glass bar in the high power semiconductor lasers device of a kind of exportable arbitrary shape uniform light spots of Fig. 3.
The another kind of structure chart of the shaping glass bar of the high power semiconductor lasers device of a kind of exportable arbitrary shape uniform light spots of Fig. 4.
The structure chart of second kind of technical scheme of high power semiconductor lasers device of a kind of exportable arbitrary shape uniform light spots of Fig. 5.
The structure chart of the third technical scheme of high power semiconductor lasers device of a kind of exportable arbitrary shape uniform light spots of Fig. 6.
Among the figure: 1, semiconductor laser crust strip array, 2, the fast and slow axis collimating mirror, 3, fast and slow axis optical beam transformation device, 4, the coupling focus lamp, 5, the shaping glass bar, 6, imaging len, 7, workbench, 8, first lens, 9, second lens.
Embodiment:
Below in conjunction with accompanying drawing and specific embodiment the present invention is described further:
Embodiment 1:
The present embodiment structure is as shown in Figure 1, comprises semiconductor laser crust strip array 1, fast and slow axis collimating mirror 2, fast and slow axis optical beam transformation device 3, coupling focus lamp 4, shaping glass bar 5, imaging len 6, workbench 7.The laser of semiconductor laser crust strip array 1 output carries out the fast and slow axis collimation to the fast and slow axis of laser respectively through fast and slow axis collimating mirror 2; Obtain quasi-parallel light; Through fast and slow axis optical beam transformation device 3 output beam is cut apart along slow-axis direction again; Pile up at quick shaft direction, shaping obtains the output laser beam of fast and slow axis beam quality homogenizing.Then; Laser beam after the shaping is focused into through coupled lens 4 is mapped to shaping glass bar 5; The cross section geometric structure of shaping glass bar 5 and size are designed to commercial Application and require hot spot; Light beam rises in the waveguide that glass bar and air form and mixes, and obtains the equally distributed hot spot of cross section at the exit end of glass bar 5.At last, imaging len 6 affacts the workpiece on the workbench 7 with the semiconductor laser of glass bar output end face.
The geometry of shaping glass bar 5 end faces in this instance and size with the geometry and the size of the output laser facula that will obtain identical.Like Fig. 2,3, shown in 4, shaping glass bar 5 its end faces can for circular, square, oval, other are regular or the polygon of non-rule produces the specific hot spot identical with shaping glass bar 5 end surface shape.If need circular light spot in the industry, then select cylindrical glass rod 5 to carry out waveguide and mix, the output circular light spot; If need rectangular light spot in the industry, then select rectangle glass column 5 to carry out waveguide and mix, the output rectangular light spot; For the hot spot that needs special shape in the industry, only need the glass bar 5 of simple this shape of design to get final product.At last, the hot spot after the shaping is by imaging len 6 output, can select the imaging len 6 of different focal to satisfy the requirement of different-thickness workpiece.The high power semiconductor lasers device of this exportable arbitrary shape uniform light spots is simple, realizes easily.
Embodiment 2:
Present embodiment is like Fig. 5, shown in 6, and the difference of it and embodiment 1 is imaging len 6, adopts two lens 8,9 to form imaging lens in the present embodiment; Its characteristic can be: first lens 8; Second lens 9 constitute set of lenses, and the focal distance f of two lens is identical, like Fig. 5; The front focal plane of first lens 8 overlaps with the outgoing end face of glass bar 5, and the back focal plane of second lens 9 overlaps with processing work center on the workbench 7.Like this, can equally distributed half hot spot of the cross section of glass bar 5 exit ends be imaged onto workpiece by 1: 1, and can regulate axial distance between first lens 8 and second lens 9 easily, not influence imaging facula.Its characteristic also can be: the focal length of first lens, 8, the second lens 9 is different, overlaps with the outgoing end face of glass bar 5 like the front focal plane of Fig. 6 first lens 8, and the back focal plane of second lens 9 overlaps with processing work center on the workbench 7.Like this, can the equally distributed semiconductor laser hot spot of the cross section laser intensity of glass bar 5 exit ends be imaged onto workpiece by the ratio of two focal lengths of lens, can play the compression hot spot or enlarge the hot spot effect, change power density.Simultaneously, also can regulate axial distance between first lens 8 and second lens 9 easily, not influence imaging facula.
Claims (4)
1. the high power semiconductor lasers device of an exportable arbitrary shape uniform light spots; It is characterized in that: comprise semiconductor laser crust strip array (1), fast and slow axis collimating mirror (2), fast and slow axis optical beam transformation device (3), coupling focus lamp (4), shaping glass bar (5), imaging len (6), workbench (7); Fast and slow axis collimating mirror (2) fast and slow axis of the laser of noise spectra of semiconductor lasers crust strip array (1) output respectively carries out the fast and slow axis collimation; Obtain quasi-parallel light; Through fast and slow axis optical beam transformation device (3) semiconductor laser being clung to bar again cuts apart along slow-axis direction; Pile up at quick shaft direction, shaping obtains the output laser beam of the preliminary homogenize of fast and slow axis beam quality; Laser beam after the shaping is focused into through coupled lens and is mapped to shaping glass bar (5); The total reflection transmission mixes in the waveguiding structure that glass bar (5) and air form, and the cross section of exporting the laser end at glass bar can obtain the equally distributed semiconductor laser hot spot of required form; At last, imaging len (6) is imaged onto the workpiece on the workbench (7) with the semiconductor laser of glass bar output end face.
2. the high power semiconductor lasers device of a kind of exportable arbitrary shape uniform light spots according to claim 1 is characterized in that: the geometry of shaping glass bar (5) end face and size with the geometry and the size of the output laser facula that will obtain identical;
Its end face of shaping glass bar (5) can be for circular, square, oval; Through the waveguide immixture of glass bar (5), obtain the hot spot of the cross section laser intensity equally distributed circle identical, ellipse at the exit end of glass bar (5) with shaping glass bar (5) end surface shape.
3. the high power semiconductor lasers device of a kind of exportable arbitrary shape uniform light spots according to claim 1 is characterized in that: the selection of the focal length of imaging len (6), can satisfy thick, thin plate different demands to the sharp keen length of laser;
The front focal plane of imaging len (6) overlaps with glass bar (5), and back focal plane overlaps with processing work center on the workbench (7); Like this, can the equally distributed semiconductor laser hot spot of cross section laser intensity of glass bar (5) exit end be imaged onto workpiece; Imaging len (6) can adopt long-focus to obtain the requirement that big sharp keen length satisfies slab processing.
4. according to the high power semiconductor lasers device of claim 1 or 3 described a kind of exportable arbitrary shape uniform light spots; It is characterized in that: described imaging len is made up of two lens; First lens (8), second lens (9) constitute set of lenses, and the focal length of two lens can be identical; The focal length of two lens also can be inequality;
The front focal plane of first lens (8) in the imaging len overlaps with the outgoing end face of glass bar (5), and the back focal plane of second lens (9) overlaps with processing work center on the workbench (7); Adopt two identical lens of focal length; Can be with the equally distributed semiconductor laser hot spot of cross section laser intensity of glass bar (5) exit end by being imaged onto workpiece at 1: 1; And can regulate axial distance between first lens (8) and second lens (9) easily; Play the effect of regulating the laser beam waist position, do not influence imaging facula; Also can adopt focal length two lens inequality; The equally distributed semiconductor laser hot spot of cross section laser intensity of glass bar (5) exit end is imaged onto workpiece by the ratio of two focal lengths of lens; Equally; Can regulate axial distance between two lens (8,9) easily, not influence imaging facula.
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| CN 201020598767 CN202142770U (en) | 2010-11-05 | 2010-11-05 | high-power semiconductor laser capable of outputting uniform laser spot in arbitrary shape |
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| CN 201020598767 CN202142770U (en) | 2010-11-05 | 2010-11-05 | high-power semiconductor laser capable of outputting uniform laser spot in arbitrary shape |
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| CN103227414A (en) * | 2013-04-09 | 2013-07-31 | 中国电子科技集团公司第十一研究所 | Semiconductor laser coupling and homogenizing device |
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| CN103227414A (en) * | 2013-04-09 | 2013-07-31 | 中国电子科技集团公司第十一研究所 | Semiconductor laser coupling and homogenizing device |
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| CN103268016A (en) * | 2013-05-31 | 2013-08-28 | 西安炬光科技有限公司 | Optical fiber coupling semiconductor laser unit homogenizing method and device |
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