CN202116644U - Heater of metal organic chemical vapor deposition equipment - Google Patents
Heater of metal organic chemical vapor deposition equipment Download PDFInfo
- Publication number
- CN202116644U CN202116644U CN2010202847306U CN201020284730U CN202116644U CN 202116644 U CN202116644 U CN 202116644U CN 2010202847306 U CN2010202847306 U CN 2010202847306U CN 201020284730 U CN201020284730 U CN 201020284730U CN 202116644 U CN202116644 U CN 202116644U
- Authority
- CN
- China
- Prior art keywords
- heating piece
- well heater
- heater
- heating plate
- ring heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
A heater of metal organic chemical vapor deposition equipment mainly comprises an inner ring heating plate (7), a first middle ring heating plate (8), a second middle ring heating plate (9) and an outer ring heating plate (10) which are sequentially disposed from inside to outside, and the inner ring heating plate (7), the outer ring heating plate (10), the first middle ring heating plate (8) and the second ring heating plate (9) are heating plates respectively made of two or more different materials. A heat shield (5) is arranged at the peripheral edge of the heater, so that heat loss in the direction of the peripheral edge of the heater is reduced, heating efficiency and utilization are improved, and the requirement on cooling due to the fact that heat is radiated to peripheral parts by the heater is also reduced. A mounting electrode of the heater is electrically connected with a molybdenum electrode by a connecting block (3), the shape and the size of the connecting block can be changed according to requirements on space below the heater, and the problem of narrow space is solved.
Description
Technical field:
The utility model relates to semiconductor devices manufacturing technology field, is absorbed in the heating system of metal-organic chemical vapor deposition equipment (MOCVD) equipment especially.
Background technology:
MOCVD is the good technique that is fit to growing semiconductor illuminating LED material epitaxy sheet.It also is a kind of industrialized economical and practical technology; Its growing principle is: on the substrate of a heating proper temperature; The gaseous compound that contains III and V group element has the substrate surface that is transported to of control, grows the thin film deposition material of specific components, specific thicknesses, particular electrical and optical parametric.
Well heater is the important component part of whole M OCVD equipment, guarantees for vapor deposition processes provides temperature environment.Be grown to example with GaN, the graphite plate temperature of general requirement well heater top is up to 1080 ℃, and the temperature control error is no more than ± 1 ℃, and this is just to the control proposition requirements at the higher level of well heater self.And conventional well heater adopts tungsten or rhenium heating piece, but the thermal load that tungsten can bear is lower, so adopt the rhenium heating piece at the bigger MOCVD equipment of load.But the price of rhenium heating piece is than the high several times of tungsten.General in addition well heater is mounted in the water-cooled cavity, and the distance of the outer ring of heating piece and chamber wall generally is no more than 40mm.The conventional well heater heat that does not adopt thermoscreen can direct radiation to the chamber wall inboard, the heating efficiency of one side well heater reduces greatly like this, also the cooling to the chamber wall brings difficulty.
Along with the continuous development of MOCVD equipment, under the certain situation of cavity external diameter how simultaneously the more WAFER of growth also more and more paid close attention to, so the compact degree of well heater is also proposed certain requirement.Conventional MOCVD well heater is generally molybdenum electrode and directly is fixed on the copper electrode through screw thread, has so just directly limited the arranging of heating piece of molybdenum electrode upper end connection.
Summary of the invention:
The purpose of the utility model is the well heater that a kind of metal-organic chemical vapor deposition equipment is provided to existing technical problem.
The technical scheme that its technical problem that solves the utility model adopts is: a kind of well heater of metal-organic chemical vapor deposition equipment is provided, comprises: the inner ring heating piece that sets gradually from the inside to the outside, the first centre circle heating piece, the second centre circle heating piece and outer ring heating piece; The heating piece of said inner ring heating piece, outer ring heating piece, the first centre circle heating piece and two kinds of second centre circle heating piece employings or above unlike material is formed.
Further, said inner ring heating piece and outer ring heating piece are the rhenium heating piece, and the said first centre circle heating piece and the second centre circle heating piece are the tungsten heating piece.
Further, the periphery of said well heater is provided with thermoscreen.
Further, said well heater comprises that also inner ring heating piece, the first centre circle heating piece, the second centre circle heating piece and outer ring heating piece are connected with molybdenum electrode; Said molybdenum electrode is connected with the switching piece.
Further, the below of said well heater is provided with three layers of reflector and one deck thermal baffle, and said thermal baffle is arranged on orlop.
The utility model mainly comprises: reflector (1), thermal baffle (2), switching piece (3), molybdenum electrode (4), thermoscreen (5), thermopair (6), inner ring heating piece (7), centre circle 1 heating piece (8), centre circle 2 heating pieces (9), outer ring heating piece (10).Be characterised in that inside and outside heating piece processes with tungsten, two kinds of differing materials of rhenium according to the heat demand different mining, has not only solved the restriction of tungsten well heater thermal load but also solved the expensive problem of rhenium well heater.Well heater periphery adopts thermoscreen (5), reduces the calorific loss of well heater peripheral direction like this, improves the utilization of heating efficiency, also can reduce peripheral part because receiving the well heater radiations heat energy to the refrigerative demand.Adopt switching piece (3) to realize that well heater installing electrodes and being electrically connected of molybdenum electrode are connected, can change the shape and size of switching piece, solve the narrow and small problem in space according to the space requirement of well heater below.
Description of drawings:
Fig. 1 is the utility model structural representation
Fig. 2 is the vertical view of the utility model
Embodiment:
The utility model is a kind of well heater of metal organic chemical vapor deposition equipment, and is as shown in Figure 1.Switching piece (3) has been realized being electrically connected of well heater below copper electrode and heating piece through molybdenum electrode (4).Inner ring heating piece (7), centre circle 1 heating piece (8), centre circle 2 heating pieces (9), outer ring heating piece (10) evolution of heat under the situation of energising, thus realized heating to the top graphite plate.The heat of inner ring (7) and outer ring (10) loses the most easily; In order to improve the heat on the unit surface; These two sections heating pieces adopt rhenium materials processed to process; Then there is not the radial calorific loss in 2 (9) two sections heating pieces of centre circle 1 (8) and centre circle, so the requirement of thermal load is reduced greatly, adopt the relatively cheap tungsten materials processed of price to process.In order to reduce whole well heater periphery radiating heat relatively, periphery increases the thermoscreen (5) that Mo processes, and has reduced external heat radiation.
General well heater is mounted on the cavity chassis, and the space of bottom is less, also has restricted conditions such as tracheae, water pipe.And the restriction of arranging for fear of the position suspension chassis and the heating piece of copper electrode; Between conventional molybdenum electrode and copper electrode, increased the switching piece (3) of molybdenum matter; The link position of both having realized heating piece is unrestricted; As shown in Figure 2, the electric connecting point of four sections heating pieces has solved the copper electrode position empty on the chassis again all in both sides.
The below of well heater also has four layers of thermal baffle, and wherein top three layers are tungsten system reflector (1), and bottom one deck is molybdenum system thermal baffle (2).
The thermopair (6) of measuring temperature has also been installed in the central position of whole well heater, finally realizes accuracy control over temperature through thermopair, desired temperature, unit, power power-supply etc.
Claims (5)
1. the well heater of a metal-organic chemical vapor deposition equipment is characterized in that, comprising: the inner ring heating piece (7) that sets gradually from the inside to the outside, the first centre circle heating piece (8), the second centre circle heating piece (9) and outer ring heating piece (10); The heating piece of said inner ring heating piece (7), outer ring heating piece (10), the first centre circle heating piece (8) and two kinds of the second centre circle heating piece (9) employings or above unlike material is formed.
2. well heater according to claim 1 is characterized in that, said inner ring heating piece (7) and outer ring heating piece (10) are the rhenium heating piece, and the said first centre circle heating piece (8) and the second centre circle heating piece (9) are the tungsten heating piece.
3. well heater according to claim 1 is characterized in that, the periphery of said well heater is provided with thermoscreen (5).
4. well heater according to claim 1 is characterized in that, said well heater comprises that also inner ring heating piece (7), the first centre circle heating piece (8), the second centre circle heating piece (9) and outer ring heating piece (10) are connected with molybdenum electrode (4); Said molybdenum electrode (4) is connected with switching piece (3).
5. well heater according to claim 1 is characterized in that, the below of said well heater is provided with three layers of reflector (1) and one deck thermal baffle (2), and said thermal baffle (2) is arranged on orlop.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202847306U CN202116644U (en) | 2010-08-09 | 2010-08-09 | Heater of metal organic chemical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202847306U CN202116644U (en) | 2010-08-09 | 2010-08-09 | Heater of metal organic chemical vapor deposition equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202116644U true CN202116644U (en) | 2012-01-18 |
Family
ID=45457725
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010202847306U Expired - Fee Related CN202116644U (en) | 2010-08-09 | 2010-08-09 | Heater of metal organic chemical vapor deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202116644U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103305815A (en) * | 2013-06-06 | 2013-09-18 | 光垒光电科技（上海）有限公司 | MOCVD (Metal Organic Chemical Vapor Deposition) equipment and heating device thereof |
| CN104046965A (en) * | 2014-05-27 | 2014-09-17 | 中国电子科技集团公司第四十八研究所 | Radiant heating element, radiant heater and MOCVD reactor |
| CN104300039A (en) * | 2013-07-16 | 2015-01-21 | 台积太阳能股份有限公司 | Apparatus and method for producing solar cells with a heater apparatus |
| CN110644045A (en) * | 2019-11-13 | 2020-01-03 | 江苏实为半导体科技有限公司 | MOCVD (metal organic chemical vapor deposition) heater source with lifting function |
| CN110983299A (en) * | 2019-12-04 | 2020-04-10 | 江苏实为半导体科技有限公司 | Heating plate for MOCVD reaction chamber |
-
2010
- 2010-08-09 CN CN2010202847306U patent/CN202116644U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103305815A (en) * | 2013-06-06 | 2013-09-18 | 光垒光电科技（上海）有限公司 | MOCVD (Metal Organic Chemical Vapor Deposition) equipment and heating device thereof |
| CN104300039A (en) * | 2013-07-16 | 2015-01-21 | 台积太阳能股份有限公司 | Apparatus and method for producing solar cells with a heater apparatus |
| CN104300039B (en) * | 2013-07-16 | 2017-11-21 | 台湾积体电路制造股份有限公司 | Utilize the apparatus and method of heater manufacture solar cell |
| CN104046965A (en) * | 2014-05-27 | 2014-09-17 | 中国电子科技集团公司第四十八研究所 | Radiant heating element, radiant heater and MOCVD reactor |
| CN110644045A (en) * | 2019-11-13 | 2020-01-03 | 江苏实为半导体科技有限公司 | MOCVD (metal organic chemical vapor deposition) heater source with lifting function |
| CN110983299A (en) * | 2019-12-04 | 2020-04-10 | 江苏实为半导体科技有限公司 | Heating plate for MOCVD reaction chamber |
| CN110983299B (en) * | 2019-12-04 | 2024-05-14 | 江苏实为半导体科技有限公司 | Heating plate for MOCVD reaction chamber |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN202116644U (en) | Heater of metal organic chemical vapor deposition equipment | |
| US20100116322A1 (en) | Collector for the generation of electrical and thermal energy | |
| Guo et al. | Scalable core–shell MoS2/Sb2Se3 nanorod array photocathodes for enhanced photoelectrochemical water splitting | |
| CN202465868U (en) | Graphite disk and reaction chamber with same | |
| CN203947158U (en) | A kind of flow field baffle mechanism of MOCVD reaction chamber and MOCVD reaction chamber | |
| CN103526186A (en) | Wafer loading disc for MOCVD (metal organic chemical vapor deposition) reactor and MOCVD reactor | |
| CN101914805A (en) | Directional solidification furnace with improved crucible cover part | |
| CN202116645U (en) | Multi-zone heating device of metal organic chemical vapor deposition device | |
| JP2013523596A (en) | Bell jar for Siemens reactor including heat radiation shield | |
| CN101265607B (en) | Graphite heater for polycrystalline silicon casting ingot process | |
| CN104233460B (en) | Reaction chamber and MOCVD equipment provided with reaction chamber | |
| CN201568846U (en) | Ceiling lamp of LED energy-saving plant | |
| CN102777829B (en) | LED project lamp using lamp shell support as mounting interface support structure | |
| KR20210145256A (en) | MOCVD Reactor | |
| CN103074607A (en) | Graphite plate and reaction chamber with graphite plate | |
| CN202881385U (en) | Wafer heating device | |
| CN102818173B (en) | LED (light-emitting diode) street lamp using lamp shell as mounting interface support structure | |
| CN201165563Y (en) | Graphitic heater for polysilicon casting ingot technology | |
| CN201652278U (en) | Electric box for electrodeless lamp | |
| CN102818148B (en) | Constructive method of LED (light-emitting diode) bulb with strong interchangeability and generality, and integrated LED bulb | |
| CN201883178U (en) | Directional solidification furnace provided with improved crucible covering part | |
| CN201866649U (en) | LED (light-emitting diode) industrial and mining lamp with matrix arrangement chips | |
| CN102818178B (en) | LED (Light-Emitting Diode) streetlamp utilizing lamp shell with heat radiator as mounting interface bracket structure | |
| CN102818182B (en) | LED (Light-Emitting Diode) streetlamp utilizing lamp shell as mounting interface bracket structure | |
| CN102818176B (en) | LED (light-emitting diode) street lamp using double-sided radiator structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Shanghai Yongsheng Semiconductor Equipment Co.,Ltd. Assignor: Shanghai Lanbao Photoelectric Materials Co., Ltd. Contract record no.: 2011310000178 Denomination of utility model: Heater of metal organic chemical vapor deposition equipment Granted publication date: 20120118 License type: Exclusive License Record date: 20110831 |
|
| LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120118 Termination date: 20120809 |