CN202050352U - IGBT (Insulated Gate Bipolar Transistor) power system - Google Patents
IGBT (Insulated Gate Bipolar Transistor) power system Download PDFInfo
- Publication number
- CN202050352U CN202050352U CN 201120054038 CN201120054038U CN202050352U CN 202050352 U CN202050352 U CN 202050352U CN 201120054038 CN201120054038 CN 201120054038 CN 201120054038 U CN201120054038 U CN 201120054038U CN 202050352 U CN202050352 U CN 202050352U
- Authority
- CN
- China
- Prior art keywords
- igbt
- copper bar
- igbt power
- power
- negative
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 45
- 239000010949 copper Substances 0.000 claims abstract description 45
- 229910052802 copper Inorganic materials 0.000 claims abstract description 45
- 239000007788 liquid Substances 0.000 claims abstract description 19
- 238000001816 cooling Methods 0.000 claims abstract description 18
- 239000003990 capacitor Substances 0.000 claims description 55
- 238000009434 installation Methods 0.000 claims description 11
- 238000010521 absorption reaction Methods 0.000 claims description 9
- 238000003491 array Methods 0.000 claims description 6
- 230000000295 complement effect Effects 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 238000009423 ventilation Methods 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000000306 component Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Landscapes
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
Abstract
The utility model discloses an IGBT (Insulated Gate Bipolar Transistor) power system which comprises system units, a connecting structure and a liquid cooling heat exchanger. The system unit comprises an IGBT power component, a direct current filter capacitance component, a positive and negative direct current Bus connecting copper bar and supporting pieces; the positive and negative direct current Bus connecting copper bar is connected with a direct current filter capacitance and the input end of an IGBT power module in parallel; the IGBT power component and the direct current filter capacitance component are connected with the supporting pieces; the two system units are oppositely mounted by folding the supporting pieces; the two supporting pieces are connected into a box shape; and the IGBT power modules of the two system units are connected with the liquid cooling heat exchanger. The design requirements of high power grade and high power density are satisfied; the stray inductances between the direct current filter capacitance and IGBT elements and the voltage impact when the IGBT is turned off are effectively reduced, and overvoltage breakdown accidents of the IGBT are effectively reduced; and uneven current problems caused by parallel connection of multi-IGBTs are solved; moreover, the IGBT (Insulated Gate Bipolar Transistor) power system has the characteristics of compact structure and low manufacture cost.
Description
Technical field
The utility model relates to a kind of power model system, is specifically related to a kind of IGBT power system.
Background technology
Fast development along with industrial technology, the large-scale power electronic equipment in the application of every profession and trade more and more widely, power grade and power density are also more and more higher, the power model that with IGBT is core devices is the core component of large-scale power electronic equipment, because environment for use is special, require power model to have characteristics such as compact conformation, easy to maintenance, power density height, therefore, power model usually is designed to the modular unit of a perfect in shape and function.
Existing IGBT power model is general main to be made up of in conjunction with a considerable amount of dc filter capacitors a plurality of discrete IGBT element parallel connections mutually again, loosely organized, need take the bigger device space, makes existing IGBT power model have following defective:
1, owing to the restriction of power electronic equipment complete machine structure volume, IGBT element or dc filter capacitor quantity in parallel are restricted, and can not satisfy the demand of high power level and high power density;
2, simultaneously the IGBT element mutually discrete structure often need to take discrete heat sink conception mutually, complex structure is unfavorable for the raising with power density of reducing of machine volume;
3, too much the direct parallel connection of IGBT element causes problems such as producing over-voltage breakdown when the stray inductance height between current unevenness weighing apparatus, IGBT element and the filter capacitor causes IGBT to turn-off between the IGBT element easily;
4, the bulky complete machine cost that makes of IGBT power model increases greatly simultaneously.
The utility model content
The technical problems to be solved in the utility model is, a kind of IGBT power system is provided, and overcomes the above-mentioned defective that prior art exists, and satisfies the requirement to IGBT power model high power level and high power density.
The technical scheme that its technical problem that solves the utility model adopts is: construct a kind of IGBT power system, comprise system unit, this system unit comprises that IGBT (PCC) power, dc filter capacitor assembly and positive and negative DC B us are connected copper bar; The IGBT drive plate that described IGBT (PCC) power comprises a plurality of IGBT power models, connect these a plurality of IGBT power models is drawn copper bar with exchanging of these a plurality of IGBT power model outputs in parallel; Described dc filter capacitor assembly comprises a plurality of dc filter capacitors and capacitor fixing assembly; Described positive and negative DC B us connects positive direct-current Bus that copper bar comprises arranged stacked and connects copper bar, negative DC B us and connect copper bar and be arranged on this positive direct-current Bus and connect copper bar and be connected insulating barrier between the copper bar with negative DC B us; Described positive and negative DC B us connects copper bar described a plurality of dc filter capacitors in parallel, described a plurality of IGBT power model inputs in parallel;
It is characterized in that the described IGBT (PCC) power of described system unit and dc filter capacitor assembly next-door neighbour are provided with; Described positive and negative DC B us connects copper bar and is positioned at described dc filter capacitor assembly top;
Described system unit comprises strutting piece, this strutting piece comprises mounting panel and the flanging that is arranged on these relative both sides of mounting panel, this mounting panel comprises arranged in arrays and a plurality of positioning through hole that match with the external cylindrical surface of described dc filter capacitor and the installation window adjacent with these a plurality of positioning through hole, and described capacitor fixing assembly is fixedly connected on described a plurality of dc filter capacitors on the described mounting panel through these a plurality of positioning through hole;
Two described system units are installed relatively with the flanging of described strutting piece, and these two described strutting pieces that connect relatively are box-shaped; Described IGBT power system comprises the syndeton that connects these two strutting pieces and is tabular liquid cooling heat exchanger;
The described IGBT (PCC) power of each described system unit is connected on the described liquid cooling heat exchanger through described installation window; Described a plurality of IGBT power model horizontal arrays of described IGBT (PCC) power are connected on the described liquid cooling heat exchanger side surface, and these a plurality of IGBT power model inputs are close to described dc filter capacitor assembly and are connected described positive and negative DC B us and connect on the link of copper bar; Described IGBT drive plate is positioned at described a plurality of IGBT power models top.
In IGBT power system of the present utility model, described IGBT (PCC) power comprises the gate pole add-in card and the noninductive absorption electric capacity of each described IGBT power model correspondence, described gate pole add-in card is set in sequence in described IGBT power model top with corresponding IGBT power model connection and by IGBT power model, gate pole add-in card, IGBT drive plate, and described noninductive absorption electric capacity is connected described IGBT power model and is connected on the link of copper bar with described positive and negative DC B us.
In IGBT power system of the present utility model, the tie point of drawing that copper bar is drawn in described interchange is positioned at this interchange and draws the be connected in parallel opposite side middle part of side of copper bar and described a plurality of IGBT power model output, comprise at this and draw be connected in parallel slotted hole between the side of tie point and this, the distance between the mid point of both sides, the length of this slotted hole middle part in parallel with each is suitable.
In IGBT power system of the present utility model, comprise the protective cover that covers described IGBT (PCC) power top.
In IGBT power system of the present utility model, two described system unit structural plan symmetries.
In IGBT power system of the present utility model, the described syndeton that connects two described strutting pieces comprises upper plate, the lower plate that connects described strutting piece, described upper plate comprises the relative flanging that is connected respectively with lower plate, the connection flanging that this is relative and mounting panel of two described strutting pieces is complementary or be complementary with the flanging of two described strutting pieces, the flanging that is connected of the connection flanging of described upper plate and lower plate is connected with two described strutting pieces couplings.
In IGBT power system of the present utility model, comprise be arranged on described lower plate one end end, downside surface and described lower plate downside surface concordant be connected minor face.
In IGBT power system of the present utility model, described upper plate comprises the ventilation through hole.
Implement IGBT power system of the present utility model, compared with the prior art, its beneficial effect is:
1. on the system radiating structure, the IGBT power model adopts shared liquid cooling heat exchanger structure, dc filter capacitor to adopt air channel convection current air-cooled heat dissipation structure, and system power grade and power density satisfy high power level, high power density designing requirement;
2. compact conformation can effectively reduce the stray inductance between dc filter capacitor and the IGBT element, and the voltge surge when reducing the IGBT shutoff effectively reduces the generation that accident is hit in the IGBT overvoltage; Simultaneously can solve the uneven flow problem that a plurality of IGBT parallel connections bring;
3. system configuration compactness, function are divided clearly, install, convenient disassembly, and system bulk is more optimized and reduced manufacturing cost.
Description of drawings
The utility model is described in further detail below in conjunction with drawings and Examples, in the accompanying drawing:
Fig. 1 is the front view of a kind of embodiment of the utility model IGBT power system.
Fig. 2 is the three-dimensional installation diagram of the utility model IGBT power system Fig. 1 embodiment.
Fig. 3 is the three-dimensional exploded view of the utility model IGBT power system Fig. 1 embodiment.
Fig. 4 is the stereogram of a kind of execution mode of upper plate in the supporting component of the utility model IGBT power system.
Fig. 5 is the three-dimensional installation diagram of system unit and liquid cooling heat exchanger among the utility model IGBT power system Fig. 1 embodiment.
Fig. 6 exchanges the stereogram of drawing 2 one kinds of execution modes of copper bar in the utility model IGBT power system.
Fig. 7 is the stereogram of a kind of execution mode of liquid cooling heat exchanger among the utility model IGBT power system Fig. 1 embodiment.
Embodiment
As Fig. 1, Fig. 2, Fig. 3, shown in Figure 5, IGBT power system of the present utility model comprises system unit, syndeton and liquid cooling heat exchanger, and the liquid cooling heat exchanger is tabular.
System unit comprises that IGBT (PCC) power 10, dc filter capacitor assembly 5, positive and negative DC B us connect copper bar 14 and strutting piece 12.The IGBT (PCC) power 10 of each system unit and dc filter capacitor assembly 5 next-door neighbours are provided with; Positive and negative DC B us connects the top that copper bar 14 is positioned at dc filter capacitor assembly 5.
The IGBT (PCC) power comprises a plurality of IGBT power models 3, IGBT drive plate 7, gate pole add-in card 4, noninductive absorption electric capacity 17 and exchanges draws copper bar 2.IGBT drive plate 7 is connected with each IGBT power model 3; Gate pole add-in card 4 is corresponding one by one with IGBT power model 3, and the IGBT power model 3 that each gate pole add-in card 4 is corresponding with it connects; Noninductive absorption electric capacity 17 is corresponding one by one with IGBT power model 3, and each is noninductive, and absorption electric capacity 17 is connected the IGBT power model 3 corresponding with it is connected on the link of copper bar 14 with positive and negative DC B us.The output of copper bar 2 each IGBT power model 3 in parallel is drawn in interchange, exchanges the tie point connection of drawing of drawing copper bar 2 and draws copper bar 1.
As shown in Figure 6, in order to make above-mentioned a plurality of IGBT module 3 and to draw current path length basically identical between the tie point, reach the purpose of IGBT parallel current-sharing, be arranged on to exchange and draw the be connected in parallel opposite side middle part of side 201 of copper bar 2 and above-mentioned a plurality of IGBT power model 3 outputs drawing tie point 203, drawing tie point 203 and be connected in parallel between the side 201, slotted hole 202 is set, and the distance between the mid point of both sides, the length of this slotted hole 202 middle part in parallel with each is (each some mid point in parallel of the side that promptly is connected in parallel 201 each some center line 204 1 side in parallel is suitable to the distance between each some mid point in parallel of opposite side) quite.
Above-mentioned a plurality of IGBT power model 3 horizontal arrays are connected on the side surface of liquid cooling heat exchanger 11, and the input of above-mentioned a plurality of IGBT power models next-door neighbour dc filter capacitor assembly 5 is connected on the link of positive and negative DC B us connection copper bar 14.Above-mentioned a plurality of IGBT power model 3, gate pole add-in card 4, IGBT drive plate 7 are set in sequence in the side surface top of liquid cooling heat exchanger 11, and IGBT drive plate 7 can be supported on the liquid cooling heat exchanger 11 by the bronze gong post.
Guarantee as far as possible that structurally drive plate 7 is the shortest with IGBT module 3 distances, help anti-locking system and disturb or be subjected to outside electromagnetic interference mutually, overcome prior art and drive the risk that parasitic parameter causes the high-power IGBT module damage because of driving long introducing of cable.
Dc filter capacitor assembly 5 comprises a plurality of dc filter capacitors 13 and capacitor fixing assembly 16, and capacitor fixing assembly 16 is connected above-mentioned a plurality of dc filter capacitors 13 on the strutting piece 12.
In the present embodiment, capacitor fixing assembly 16 adopts following structure: as shown in Figure 5, the capacitor fixing assembly comprises capacitor fixing ring 162 and attachment screw (not shown), capacitor fixing ring 162 comprises openend, openend couples together by retainer ring screw 163, capacitor fixing ring 162 is fastened on the electric capacity 13, capacitor fixing ring 162 also comprises a plurality of connection flangings 161 that are arranged on the ring side, on connection flanging 161 through hole is set, attachment screw passes through hole capacitor fixing ring 162 is connected on the strutting piece 12.In other embodiments, capacitor fixing assembly 16 can adopt other common structures.
Positive and negative DC B us connects positive direct-current Bus that copper bar 14 comprises arranged stacked and connects copper bar, negative DC B us and connect copper bar and be arranged on this positive direct-current Bus and connect copper bar and be connected second insulating barrier 15 between the copper bar with negative DC B us.Positive and negative DC B us connects the input of copper bar above-mentioned a plurality of dc filter capacitors 13 in parallel, above-mentioned a plurality of IGBT power models 3 in parallel.
Positive and negative DC B us connects copper bar 14 with the path of short victory, IGBT module 3 and dc filter capacitor 13 are coupled together, and draw line bank in the top of dc filter capacitor assembly 5, reaching the purpose that reduces stray inductance between dc filter capacitor 13 and the IGBT module 3 on the electric property.
Strutting piece 12 comprises mounting panel and the flanging that is arranged on these relative both sides of mounting panel, flanging forms flute profile with the installation limit, mounting panel comprises arranged in arrays and a plurality of positioning through hole that match with the external cylindrical surface of dc filter capacitor 13 and the installation window adjacent with these a plurality of positioning through hole, capacitor fixing assembly 16 is fixedly connected on a plurality of dc filter capacitors 13 on the mounting panel through these a plurality of positioning through hole, and IGBT (PCC) power 10 is installed in this installation window.
Two system units are installed relatively with the flanging of strutting piece 12, and relatively two strutting pieces 12 that connect are box-shaped, and strutting piece 12 couples together by syndeton.The both side surface of liquid cooling heat exchanger 11 is connected (as above-mentioned) with the IGBT (PCC) power 10 of two system units respectively, and the liquid in-out mouth 111 of liquid cooling heat exchanger 11 passes (also can be set to pass from lower plate 9) from correspondence is arranged on hole on the flanging of strutting piece 12 of two system units.
In the present embodiment, syndeton comprises upper plate 8 and the lower plate 9 that connects two strutting pieces.As Fig. 2, shown in Figure 3, upper plate 8 comprises the relative flanging that is connected respectively with lower plate 9, the connection flanging that this is relative and the mounting panel of two strutting pieces 12 be complementary (also can being complementary) with the flanging of two strutting pieces 12, with screw upper plate 8 and lower plate 9 are connected on two strutting pieces 12, realize connecting; Also the connection installation limit that flanging and its mated or the flanging of strutting piece 12 can be welded together, realize connecting.In other embodiments, syndeton can adopt the direct structure that the connection flanging of strutting piece 12 is connected (welding or screw connection etc.), all can realize the object of the invention.
As shown in Figure 3, after two system units connected into box-shaped relatively with strutting piece 12, entire I GBT power system can form the inside and outside convection circulation of box-shaped, realizes the heat loss through convection to IGBT (PCC) power 10 and dc filter capacitor 13.When adopting upper plate 8 to connect strutting piece 12, as shown in Figure 4, ventilation hole 81 can be set on upper plate 8.
As shown in Figure 3, to connect and installation in order being more convenient for, the earth lug 18 that is connected upper plate 8 upsides to be set, connection minor face 19 is set, this connection minor face 19 is positioned at an end end of the connection flanging of strutting piece 12, and side external surface is concordant with the downside surface of lower plate 9 down for it.
In order to protect IGBT (PCC) power 10, the protective cover 6 that covers IGBT (PCC) power 10 tops is set.
For simplified structure, and the interchangeability of raising equipment component, two system unit structures that are connected adopt the plane symmetry structures.
The effect of noninductive absorption electric capacity 17 is Vce (IGBT power model C, E pole tension) the due to voltage spikes values that reduce IGBT power model 3, further guarantees element safety.In other embodiments, noninductive absorption electric capacity 17 is not set, does not influence the realization of the basic goal of the invention of the utility model.
In other embodiments, when adopting non-capillary formula IGBT module, the function of IGBT gate pole add-in card 4 can be integrated in the IGBT drive plate 7, thereby can omit IGBT gate pole add-in card 4.
Claims (8)
1. an IGBT power system comprises system unit, and this system unit comprises that IGBT (PCC) power, dc filter capacitor assembly and positive and negative DC B us are connected copper bar; The IGBT drive plate that described IGBT (PCC) power comprises a plurality of IGBT power models, connect these a plurality of IGBT power models is drawn copper bar with exchanging of these a plurality of IGBT power model outputs in parallel; Described dc filter capacitor assembly comprises a plurality of dc filter capacitors and capacitor fixing assembly; Described positive and negative DC B us connects positive direct-current Bus that copper bar comprises arranged stacked and connects copper bar, negative DC B us and connect copper bar and be arranged on this positive direct-current Bus and connect copper bar and be connected insulating barrier between the copper bar with negative DC B us; Described positive and negative DC B us connects copper bar described a plurality of dc filter capacitors in parallel, described a plurality of IGBT power model inputs in parallel;
It is characterized in that the described IGBT (PCC) power of described system unit and dc filter capacitor assembly next-door neighbour are provided with; Described positive and negative DC B us connects copper bar and is positioned at described dc filter capacitor assembly top;
Described system unit comprises strutting piece, this strutting piece comprises mounting panel and the flanging that is arranged on these relative both sides of mounting panel, this mounting panel comprises arranged in arrays and a plurality of positioning through hole that match with the external cylindrical surface of described dc filter capacitor and the installation window adjacent with these a plurality of positioning through hole, and described capacitor fixing assembly is fixedly connected on described a plurality of dc filter capacitors on the described mounting panel through these a plurality of positioning through hole;
Two described system units are installed relatively with the flanging of described strutting piece, and these two described strutting pieces that connect relatively are box-shaped; Described IGBT power system comprises the syndeton that connects these two strutting pieces and is tabular liquid cooling heat exchanger;
The described IGBT (PCC) power of each described system unit is connected on the described liquid cooling heat exchanger through described installation window; Described a plurality of IGBT power model horizontal arrays of described IGBT (PCC) power are connected on the described liquid cooling heat exchanger side surface, and these a plurality of IGBT power model inputs are close to described dc filter capacitor assembly and are connected described positive and negative DC B us and connect on the link of copper bar; Described IGBT drive plate is positioned at described a plurality of IGBT power models top.
2. IGBT power system as claimed in claim 1, it is characterized in that, described IGBT (PCC) power comprises the gate pole add-in card and the noninductive absorption electric capacity of each described IGBT power model correspondence, described gate pole add-in card is set in sequence in described IGBT power model top with corresponding IGBT power model connection and by IGBT power model, gate pole add-in card, IGBT drive plate, and described noninductive absorption electric capacity is connected described IGBT power model and is connected on the link of copper bar with described positive and negative DC B us.
3. IGBT power system as claimed in claim 1, it is characterized in that, the tie point of drawing that copper bar is drawn in described interchange is positioned at this interchange and draws the be connected in parallel opposite side middle part of side of copper bar and described a plurality of IGBT power model output, comprise at this and draw be connected in parallel slotted hole between the side of tie point and this, the distance between the mid point of both sides, the length of this slotted hole middle part in parallel with each is suitable.
4. IGBT power system as claimed in claim 1 is characterized in that, comprises the protective cover that covers described IGBT (PCC) power top.
5. IGBT power system as claimed in claim 1 is characterized in that, two described system unit structural plan symmetries.
6. as the described IGBT power system of one of claim 1 to 5, it is characterized in that, the described syndeton that connects two described strutting pieces comprises upper plate, the lower plate that connects described strutting piece, described upper plate comprises the relative flanging that is connected respectively with lower plate, the connection flanging that this is relative and mounting panel of two described strutting pieces is complementary or be complementary with the flanging of two described strutting pieces, the flanging that is connected of the connection flanging of described upper plate and lower plate is connected with two described strutting pieces couplings.
7. IGBT power system as claimed in claim 6 is characterized in that, comprise be arranged on described lower plate one end end, downside surface and described lower plate downside surface concordant be connected minor face.
8. IGBT power system as claimed in claim 6 is characterized in that described upper plate comprises the ventilation through hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120054038 CN202050352U (en) | 2011-03-03 | 2011-03-03 | IGBT (Insulated Gate Bipolar Transistor) power system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120054038 CN202050352U (en) | 2011-03-03 | 2011-03-03 | IGBT (Insulated Gate Bipolar Transistor) power system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202050352U true CN202050352U (en) | 2011-11-23 |
Family
ID=44990643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120054038 Expired - Fee Related CN202050352U (en) | 2011-03-03 | 2011-03-03 | IGBT (Insulated Gate Bipolar Transistor) power system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202050352U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103354414A (en) * | 2013-06-17 | 2013-10-16 | 许继集团有限公司 | Parallel IGBT power unit |
| CN103490400A (en) * | 2013-08-21 | 2014-01-01 | 安徽国科电力设备有限公司 | Distributed level overvoltage control system and method |
| WO2018040308A1 (en) * | 2016-08-31 | 2018-03-08 | 浙江海得新能源有限公司 | Power cabinet for wind power converter |
-
2011
- 2011-03-03 CN CN 201120054038 patent/CN202050352U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103354414A (en) * | 2013-06-17 | 2013-10-16 | 许继集团有限公司 | Parallel IGBT power unit |
| CN103354414B (en) * | 2013-06-17 | 2016-02-24 | 许继电气股份有限公司 | A kind of parallel IGBT power unit |
| CN103490400A (en) * | 2013-08-21 | 2014-01-01 | 安徽国科电力设备有限公司 | Distributed level overvoltage control system and method |
| CN103490400B (en) * | 2013-08-21 | 2017-04-12 | 安徽合凯电气科技股份有限公司 | Distributed level overvoltage control system and method |
| WO2018040308A1 (en) * | 2016-08-31 | 2018-03-08 | 浙江海得新能源有限公司 | Power cabinet for wind power converter |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103401434B (en) | A kind of power unit of large-power current transformer | |
| CN103078471A (en) | Power module and current converter | |
| CN202050352U (en) | IGBT (Insulated Gate Bipolar Transistor) power system | |
| CN202026233U (en) | IGBT(Insulated Gate Bipolar Transistor) power module system structure | |
| CN203339972U (en) | Sliding-rail type IGBT water-cooling power module | |
| CN201699569U (en) | IGBT power module system | |
| CN203416177U (en) | Photovoltaic inverter | |
| CN203056828U (en) | IGBT parallel connection power-unit structure layout | |
| CN203086319U (en) | Liquid cooling insulated gate bipolar transistor (IGBT) power module used for wind power generation | |
| CN104410249B (en) | Part arrangement structure for modularized power units | |
| CN201682406U (en) | Three-dimensional IGBT power module | |
| CN103956885A (en) | Compact power unit of wind power converter | |
| CN203827160U (en) | Compact power unit for wind power converter | |
| CN202167867U (en) | Bus type battery charging frame | |
| CN202395663U (en) | Super-high-capacity single-phase bridge-type inverter adopting water-cooling heat radiating | |
| CN207573246U (en) | A kind of light rail auxiliary power module and light rail AuCT | |
| CN203352420U (en) | A current transformer power module structure | |
| CN206790360U (en) | Power model and power cabinet in parallel a kind of more IGBT | |
| CN205141972U (en) | Direct current reactor of converter | |
| CN202713122U (en) | Servo driver power loop unit based on low inductance bus | |
| CN203339936U (en) | Power unit structure and high-voltage inverter | |
| CN105490558A (en) | Diode clamped three-level converter and power system thereof | |
| CN202135039U (en) | IGBT module unit and power electronic system | |
| CN202197104U (en) | Power unit of active power filter | |
| CN205377687U (en) | Inverter power module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: SHENZHEN HOPEWIND ELECTRIC CO., LTD. Free format text: FORMER NAME: SHENZHEN HEWANG ELECTRIC CO., LTD. |
|
| CP03 | Change of name, title or address |
Address after: 518055 Guangdong city of Shenzhen province Nanshan District Xili town village official Liuzhou Industrial Zone No. 5 Building second layer 1-3 Patentee after: Shenzhen's standing grain hopes electric limited company Address before: 518055 Guangdong city of Shenzhen province Nanshan District Xili Town, Dragon Village Second Industrial District 5 Building 5 floor Patentee before: Shenzhen Hewang Electric Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111123 Termination date: 20200303 |