CN202003978U - 具金刚石导热厚膜的发热组件导热基座结构 - Google Patents

具金刚石导热厚膜的发热组件导热基座结构 Download PDF

Info

Publication number
CN202003978U
CN202003978U CN201120020569.6U CN201120020569U CN202003978U CN 202003978 U CN202003978 U CN 202003978U CN 201120020569 U CN201120020569 U CN 201120020569U CN 202003978 U CN202003978 U CN 202003978U
Authority
CN
China
Prior art keywords
heat
thick film
conducting base
diamond
conducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201120020569.6U
Other languages
English (en)
Inventor
陈鸿文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CN201120020569.6U priority Critical patent/CN202003978U/zh
Application granted granted Critical
Publication of CN202003978U publication Critical patent/CN202003978U/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate

Abstract

本实用新型涉及一种具有金刚石导热厚膜发热组件的导热基座结构。它包括：一导热基座，在导热基座平面上贴合一片40-800微米厚度的金刚石导热厚膜，金刚石导热厚膜上部贴合有发热组件。并且在避开金刚石导热厚膜上表面的区域，制作一层覆盖导热基座上表面的电路绝缘层。该电路绝缘层上部表面可排置电路，该电路通过金属导线连接发热组件的各电极供电。本实用新型发光二极管的导热基座结构，可透过金刚石导热厚膜迅速传导热量，以维持发热组件的正常工作温度。

Description

具金刚石导热厚膜的发热组件导热基座结构
技术领域
本实用新型涉及导热应用之领域，具体涉及一种具金刚石导热厚膜之发热组件的导热基座结构，属于国际专利分类H01L技术领域。
背景技术
随着各种电子组件功率的不断提高，电子组件的热排放量也相对增加，而形成严重的问题。纵观目前的导热方式，方式一：将电子组件黏贴于高分子绝缘层。方式二：将电子组件黏贴于陶瓷绝缘层，如使用氮化铝陶瓷基板的方式。方式三：将电子组件通过导热膏与散热基座连结导热。上述几种使用方式仍存在着如下缺点：高分子绝缘层、陶瓷基板绝缘层或导热膏皆为高热阻结构材料，使电子组件的发热传导阻塞，电子组件的工作温度上升，造成设备的不稳定，甚至于损坏设备。
发明内容
本实用新型的目的，在于提供一种具金刚石导热厚膜发热组件的导热基座结构。
本实用新型的技术方案如下。
一种具金刚石导热厚膜的发热组件导热基座结构，它包括一导热基座；一个以上厚度为40-800微米的金刚石导热厚膜，该金刚石导热厚膜的下部贴合于所述导热基座的平面上；在金刚石导热厚膜上贴合有发热电子组件；在导热基座的表面排置有一层以上的电路绝缘层；所述的电路绝缘层避开了金刚石导热厚膜在导热基座上所贴覆的区域、覆盖在导热基座的上表面。
所述的导热基座，其原料选自硅、陶瓷、石墨或金属中的一种。
所述的发热电子组件，是由p型与n型半导体组成的发光二极管。
所述的金刚石导热厚膜还可采取镶入在所述的导热基座上。
本实用新型发光二极管的导热基座结构，可透过金刚石导热厚膜迅速传导热量，以维持发热组件的正常工作温度，从而解决了现有技术中的难题。
附图说明
图1为本实用新型一种实施方式的剖视结构示意图；
图2为本实用新型之另一种实施方式的剖视结构示意图。
图中：1.导热基座，2.金刚石导热厚膜，3.发光二极管，4.电路绝缘层，5.电路，6.导线，7.石墨层。
具体实施方式
参见图1，本实用新型的结构包括：以铜为结构体的导热基座1，在导热基座1的平面上贴合一片厚度为300微米的金刚石导热厚膜2，金刚石导热厚膜2上部贴合有两个发光二极管3，在避开金刚石导热厚膜2上表面的区域，制作一层覆盖导热基座上表面的电路绝缘层4，该电路绝缘层4上部表面排置电路5，该电路5以金属导线6连接半导体的各电极供电。因此，发光二极管3的导热基座结构，可透过金刚石导热厚膜2迅速传导热量，以维持发光二极管3的正常工作温度。
参见图2，本实用新型的结构包括：以石墨及铜为复合结构体的导热基座1，在石墨层7的上表面，制作一片厚度为60微米的金刚石导热厚膜2，金刚石导热厚膜2上部贴合两个发光二极管3结构；在避开金刚石导热厚膜2上表面的区域，制作一层覆盖导热基座上表面的电路绝缘层4，该电路绝缘层4上部表面排置电路5，该电路5以金属导线6连接半导体的各电极供电。因此，发光二极管3的导热基座结构，可透过金刚石导热厚膜2迅速传导热量，以维持发光二极管3的正常工作温度。

Claims (4)

1.一种具金刚石导热厚膜的发热组件导热基座结构，其特征在于：它包括一导热基座；一个以上厚度为40-800微米的金刚石导热厚膜，该金刚石导热厚膜的下部贴合于所述导热基座的平面上；在金刚石导热厚膜上贴合有发热电子组件；在导热基座的表面排置有一层以上的电路绝缘层；所述的电路绝缘层避开了金刚石导热厚膜在导热基座上所贴覆的区域、覆盖在导热基座的上表面。
2.根据权利要求1所述的具金刚石导热厚膜的发热组件导热基座结构，其特征在于：所述的导热基座，其原料选自硅、陶瓷、石墨或金属中的一种。
3.根据权利要求1所述的具金刚石导热厚膜的发热组件导热基座结构，其特征在于：所述的发热电子组件，是由p型与n型半导体组成的发光二极管。
4.根据权利要求1所述的具金刚石导热厚膜的发热组件导热基座结构，其特征在于：所述的金刚石导热厚膜镶入在所述的导热基座上。
CN201120020569.6U 2011-01-24 2011-01-24 具金刚石导热厚膜的发热组件导热基座结构 Expired - Fee Related CN202003978U (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201120020569.6U CN202003978U (zh) 2011-01-24 2011-01-24 具金刚石导热厚膜的发热组件导热基座结构

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201120020569.6U CN202003978U (zh) 2011-01-24 2011-01-24 具金刚石导热厚膜的发热组件导热基座结构

Publications (1)

Publication Number Publication Date
CN202003978U true CN202003978U (zh) 2011-10-05

Family

ID=44706705

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201120020569.6U Expired - Fee Related CN202003978U (zh) 2011-01-24 2011-01-24 具金刚石导热厚膜的发热组件导热基座结构

Country Status (1)

Country Link
CN (1) CN202003978U (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103078052A (zh) * 2013-01-16 2013-05-01 东莞市中实创半导体照明有限公司 纳米金刚石镀膜封装基板
GB2529512A (en) * 2014-06-18 2016-02-24 Element Six Technologies Ltd An electronic device component with an integral diamond heat spreader
WO2019000285A1 (zh) * 2017-06-28 2019-01-03 陈鸿文 一种导热胶膜

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103078052A (zh) * 2013-01-16 2013-05-01 东莞市中实创半导体照明有限公司 纳米金刚石镀膜封装基板
GB2529512A (en) * 2014-06-18 2016-02-24 Element Six Technologies Ltd An electronic device component with an integral diamond heat spreader
GB2529512B (en) * 2014-06-18 2016-09-21 Element Six Tech Ltd An electronic device component with an integral diamond heat spreader
US10366936B2 (en) 2014-06-18 2019-07-30 Element Six Technologies Limited Electronic device component with an integral diamond heat spreader
WO2019000285A1 (zh) * 2017-06-28 2019-01-03 陈鸿文 一种导热胶膜

Similar Documents

Publication Publication Date Title
CN104465535B (zh) 衬底、芯片布置及其制造方法
CN203481273U (zh) 一种基于AlSiC复合基板的LED光源模块
TW201226797A (en) LED light module and LED chip
JP2012523111A5 (zh)
RU2011144115A (ru) Термоэлектрический модуль с изолированным субстратом
CN202003978U (zh) 具金刚石导热厚膜的发热组件导热基座结构
TWI620354B (zh) 具有絕緣性之類鑽石膜層的熱電轉換元件及其製造方法暨熱電轉換模組
WO2016019720A1 (zh) 宽禁带半导体器件及其制备方法
CN103794580A (zh) 一种绝缘互联散热板及功率模块
CN107369660A (zh) 功率模块及其制造方法
JP6246057B2 (ja) 半導体装置
JP6551432B2 (ja) 半導体装置とその製造方法
CN202444696U (zh) 一种高导热性组合线路板
CN101841973B (zh) 基于金属基制作高导热性电路板的方法及电路板
CN103247742B (zh) 一种led散热基板及其制造方法
CN204333035U (zh) 一种新型高导热复合铝基板
CN202524652U (zh) 一种高导热性组合线路板
KR102456680B1 (ko) 열전소자
CN102569546B (zh) 晶粒结构、其制造方法及其基板结构
CN201623180U (zh) 低热阻led
JP6508182B2 (ja) 半導体モジュールとその製造方法
JP5974289B2 (ja) 熱電変換素子及び熱電変換モジュール
CN208014679U (zh) 一种用于功率模块的高导热基板
TWI624087B (zh) Layered structure of green energy chip device
CN219087640U (zh) 一种导热相变陶瓷基板结构

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20111005

Termination date: 20150124

EXPY Termination of patent right or utility model