CN201914921U

CN201914921U - V-shaped flame burner for synthesis of carbon nanotube (CNT) arrays

Info

Publication number: CN201914921U
Application number: CN2010206417133U
Authority: CN
Inventors: 郭永红; 孙保民; 赵惠富; 许秉浩
Original assignee: North China Electric Power University
Current assignee: North China Electric Power University
Priority date: 2010-11-29
Filing date: 2010-11-29
Publication date: 2011-08-03
Anticipated expiration: 2020-11-29

Abstract

The utility model discloses a V-shaped flame burner for the synthesis of carbon nanotube (CNT) arrays, and belongs to the technical field of CNT synthesis. The V-shaped flame burner comprises a V-shaped isosceles body, a rectangular central tube, external flame spouts and a sampling base plate, wherein the two sides of the V-shaped isosceles body are open, the bottom of the V-shaped isosceles body is connected with the rectangular central tube, the external flame spouts are placed in parallel with the left and the right side surfaces of the rectangular central tube, and the sampling base plate is placed in the center of the V-shaped isosceles body in the direction perpendicular to the rectangular central tube. The device provided by the utility model directly adopts flame as a heat source, so as to improve the heating rate and energy utilization ratio of reactions, shorten the reaction time and reduce the energy consumption.

Description

A kind of V-flame burner of synthesizing carbon nanotubes array

Technical field

The utility model belongs to the carbon nanotube synthesis technical field, particularly a kind of V-flame burner of synthesizing carbon nanotubes array.

Background technology

Carbon nanotube (Carbon Nanotube, CNT) by one deck or multilayer graphite curl according to certain helix angle form, diameter is nano level tubular nanometer material.The accurate 1-dimention nano new carbon of carbon nanotube has unique electricity, chemistry and mechanical property.The intensity that studies show that CNT is about 100 times of steel, and density has only the sixth of steel.The resistance of CNT is 4.2～190k Ω/μ m, and its axial thermal conductivity is up to 6600W/ (mK), exceeds 1 order of magnitude than the thermal conductivity of metal, with thermal conductivity best material diamond is suitable up to now; CNT has the electronic structure of enriching, and is one of most promising components and parts of microelectronics of future generation.But disorderly and unsystematic, the mutual winding of free growing carbon nanotube has limited the application and development of carbon nanotube, particularly the application aspect device.And aspects such as directional carbon nanotube array emission on the scene, electrode materials, super capacitor, transmitter have shown preferable performance, are the gordian techniquies of making based on the Field Emission Display of carbon nanotube.Therefore, realize efficient, the continuous batch of carbon nano pipe array, the low-cost carbon nanotube key in application that becomes.

Synthesis method representative studies for carbon nano pipe array mainly contains more following at present:

Separate and think to wait deeply (Li W Z, Xie S S, Qian L X, et al.Science, 1996,274:1701～1703) to propose to utilize the method for duct restriction CNT orientation to prepare carbon nano pipe array.They are by adopting the method for collosol and gel, in the gel that the iron catalyst particles dispersed is formed to teos hydrolysis, feed acetylene gas then, and the employing controlled temperature is 700 ℃ a chemical vapor deposition processes, it is spacing to be dispersed in nano level iron catalyst particle in the duct catalytic synthesis of C nanotube and passing hole channel in a suitable temperature window, make the CNT oriented growth, thereby obtain the very big carbon nano pipe array of length-to-diameter ratio.(Ren Z F such as Ren, HuangZ P, Xu JW, et al.Science, 1998,282 (5391): 1105～1107) method of the Ti Chuing nickel film of sputter last layer 15nm～60nm on glass substrate at first, the etching through ammonia obtains the dispersed catalyst particle again, be that carbon source is passed through plasma enhanced chemical vapor deposition then with acetylene, under 660 ℃, prepare directed array of multi-walled carbon nanotubes perpendicular to glass surface.Isoionicly induce oriented growth to play promoter action to CNT.(Melechko A V such as Fan Shoushan, MerkulovV I, McKnightT E, et al.JournalofApplied Physics, 2005,97 (4): 104～130) utilize the film catalytic coking to learn vapour deposition first and successfully prepared array of multi-walled carbon nanotubes, this method at first obtains porous silicon with the galvanic corrosion monocrystalline silicon piece, obtain the iron catalyst film of 5nm then by electron beam evaporation plating at porous silicon surface, after air atmosphere annealing forms granules of catalyst, with acetylene is carbon source, and temperature of reaction is 700 ℃, has grown the array of multi-walled carbon nanotubes perpendicular to substrate surface in the thermal chemical vapor deposition stove.

But the method for above synthesizing carbon nanotubes array mostly adopts chemical gaseous phase depositing process, and institute's employing equipment is all comparatively expensive, and reactions steps is comparatively complicated.Up to now, the mode that does not still have efficient, continuous batch, low-cost synthesizing carbon nanotubes array.The utility model is protected the people, the Zhao Huifu (patent No.: PNCN1830770-A) provide a kind of V-flame burner of V-flame synthesizing carbon nanotubes array on the burner of V-type of Ti Chuing and pyramid type pyrolysis flame synthesizing carbon nanotubes and the synthetic method basis grandson in 2006.

The utility model content

The utility model is at the synthetic equipment used costliness of existing carbon nanotube, and reactions steps is complicated problems comparatively, proposes a kind of efficiently, the V-flame burner of continuous batch, low-cost synthesizing carbon nanotubes array.

V-flame burner of the present utility model comprises V-type isosceles body, rectangular centre pipe, external flame spout, sampling substrate, it is characterized in that V-type isosceles body both sides are set to opening, and bottom and rectangular centre pipe join; External flame spout and the parallel placement in rectangular centre pipe left and right side; The sampling substrate places V-type isosceles body central authorities by the direction perpendicular to the rectangular centre pipe.

Described sampling substrate is for coating the polishing monocrystalline silicon piece or the quartz plate of buffer coating and catalyst coat successively.

Described buffer coating is that pure aluminum, catalyst coat are fe, elemental nickel or simple substance cobalt.

The beneficial effects of the utility model: the utility model directly adopts flame as thermal source, has improved the heating rate and the capacity usage ratio of reaction, has reduced reaction times and energy consumption.The V-flame burner that the utility model provides flame heating and carbon nanotube building-up process separately, thereby avoided the carbon source of the affluence in the fuel to cause the generation of a large amount of carbon blacks and Nano capsule, can synthesize higher-quality carbon nano pipe array efficiently.

Description of drawings

Fig. 1 is the utility model V-flame burner tomograph;

Fig. 2 is the utility model V-flame burner principle schematic;

Number in the figure: 1-V type isosceles body; 2-rectangular centre pipe; 3-external flame spout; The 4-substrate of taking a sample; 5-flame; The flammable premixed gas of 6-; 7-reactant mixed gas;

Embodiment

Below in conjunction with the drawings and specific embodiments embodiment of the present utility model is further described:

Embodiment 1:

A kind of V-flame burner described in the utility model mainly is made up of V-type isosceles body 1, rectangular centre pipe 2, external flame spout 3, sampling substrate 4; V-type isosceles body 1 both sides are set to opening, and bottom and rectangular centre pipe 2 join; External flame spout 3 and the parallel placement in rectangular centre pipe 2 left and right sides (Fig. 1, Fig. 2); Pass through magnetron sputtering at polishing monocrystalline silicon piece or quartz plate surface, plate the aluminium Al of one deck 20～50nm and the iron Fe of 5～10nm successively, make the sampling substrate; The sampling substrate is placed V-type isosceles body central authorities by the direction perpendicular to the rectangular centre pipe.

Utilize V-flame burner synthesizing carbon nanotubes array described in the utility model, operation steps is:

(1) at first, with the igniting of V-flame burner, the flammable premixed gas that acetylene and oxygen are formed is from the ejection of V-type external body flame jet, and stable burning, and the V-type mouth is heated, and the synthetic high temperature heat source that provides of carbon nano pipe array is provided; Fire the severe degree that oxygen is recently regulated flame by regulating, thereby change V-type mouth sampling area temperature (550～700 ℃);

(2) secondly, feed methane, hydrogen and nitrogen, the synthetic carbon source that provides of carbon nano pipe array is provided to the rectangular centre pipe;

(3) last, the sampling substrate is put in the V-type exit of burner, take off behind heating 3～5min, obtain carbon nano pipe array.

Claims

1. a V-flame burner is characterized in that, described burner mainly is made up of V-type isosceles body (1), rectangular centre pipe (2), external flame spout (3), sampling substrate (4); V-type isosceles body (1) both sides are set to opening, and bottom and rectangular centre pipe (2) join; External flame spout (3) and the parallel placement in rectangular centre pipe (2) left and right side; Sampling substrate (4) places V-type isosceles body central authorities by the direction perpendicular to rectangular centre pipe (2).

2. according to the described a kind of V-flame burner of claim 1, it is characterized in that described sampling substrate (4) is for coating the polishing monocrystalline silicon piece or the quartz plate of buffer coating and catalyst coat successively.

3. according to the described a kind of V-flame burner of claim 2, it is characterized in that described buffer coating is that pure aluminum, catalyst coat are fe, elemental nickel or simple substance cobalt.