CN102477544A - Atomic layer deposition method used for preparing inner wall membrane of porous material, and equipment thereof - Google Patents
Atomic layer deposition method used for preparing inner wall membrane of porous material, and equipment thereof Download PDFInfo
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- CN102477544A CN102477544A CN2010105703857A CN201010570385A CN102477544A CN 102477544 A CN102477544 A CN 102477544A CN 2010105703857 A CN2010105703857 A CN 2010105703857A CN 201010570385 A CN201010570385 A CN 201010570385A CN 102477544 A CN102477544 A CN 102477544A
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Abstract
The invention discloses an atomic layer deposition method used for preparing an inner wall membrane of a porous material. The method comprises steps that: a porous material sample is placed in a reaction chamber, and the reaction chamber is subject to vacuum treatment; different precursors are delivered into one end of the porous material sample through alternate pulses; the precursors are subject to a reaction, such that a membrane is deposited on the inner wall of the porous material sample; superfluous precursors and reaction by-products are removed; different precursors are delivered into the other end of the porous material sample through alternate pulses; the precursors are subject to a reaction, such that a membrane is deposited on the inner wall of the porous material sample; superfluous precursors and reaction by-products are removed; the above steps are repeated, until a deposited membrane with a required thickness is obtained. The invention also discloses atomic layer deposition equipment employed by the method used for preparing the inner wall membrane of the porous material. With the atomic layer deposition method and equipment provided by the invention, the uniformity of the porous material atomic layer deposited membrane thickness can be improved, and scaled production can be realized.
Description
Technical field
The relevant a kind of Atomic layer deposition method of the present invention refers in particular to a kind of Atomic layer deposition method and equipment thereof for preparing porous material inwall film.
Background technology
Ald (ALD, Atomic Layer Deposition) is a kind ofly can the presoma ALT pulse be fed reactor drum, make the technology of presoma chemisorption and reaction in substrate forming deposit film.Adopt the deposit film of said technique for atomic layer deposition preparation, compare with the deposit film that adopts general chemistry vapour deposition preparation, have the following advantages: (1) can carry out at a lower temperature; (2) can prepare the nano level film; (3) obtaining 100% naturally successively covers; (4) thickness is even; (5) consistence of excellence.
At present, conventional atomic layer deposition apparatus reaction chamber mainly contains following several kinds: (1) has the rotation base station, and substrate is placed on the rotation base station, passes in and out the precursor source air-flow successively, and the centre is separated with rare gas element; (2) precursor source flows through the hot-wall cvd tubular reactor; (3) travelling-wave type reactor drum (traveling-wave reactor).Wherein, the gas flow pattern mainly contains cross-flow mode (cross-flow) or spray model (showerhead).Cross-flow mode mainly is meant gas flow direction and substrate surface level; Spray model is meant that mainly gas flow direction is vertical with substrate surface.
Adopt above-mentioned atomic layer deposition apparatus reaction chamber, can be on the plane, the uniform deposit film of substrate surface preparation special-shaped curved or less form ratio.But, the sedimentary film of porous material inwall with higher form ratio, thicknesses of layers reduces along gas flow direction gradually, and homogeneity is relatively poor.Be difficult to realize have the batch process of the porous substrate of higher form ratio.
Summary of the invention
Main purpose of the present invention is to provide a kind of Atomic layer deposition method and equipment thereof for preparing porous material inwall film, can improve the homogeneity of porous material ald film thickness, and then realizes mass production.
For achieving the above object, the present invention provides a kind of Atomic layer deposition method for preparing porous material inwall film, comprising: step S10: the porous material sample is arranged in the reaction cavity, said reaction cavity is carried out vacuum-treat; Step S20: the end ALT pulse to said porous material sample feeds different presomas, and said presoma reacts, and forms the film that is deposited on said porous material sample inwall, removes unnecessary presoma and byproduct of reaction; Step S30: the other end ALT pulse to said porous material sample feeds different presomas, and said presoma reacts, and forms the film that is deposited on said porous material sample inwall, removes unnecessary presoma and byproduct of reaction; Step S40: repeating said steps S20 and step S30 are until the film of deposition desired thickness.
Further, when said porous material sample is fixedly installed in the said reaction cavity, alternately feed said presoma to the internal pulses of said reaction cavity successively from opposite both direction.
Further, when said porous material sample can be rotatably set in the said reaction cavity, feed different said presomas to the internal pulses of said reaction cavity respectively from identical direction.
Further, said porous material sample symmetry axis Rotate 180 degree radially.
Further, said presoma feeds said reaction cavity with spray pattern and cross-flow mode pulse.
Further, before the ALT pulse of the inside of said reaction cavity feeds said presoma, this method also comprises: with the processing of heating or freeze of said reaction cavity.
For achieving the above object, the present invention also provides a kind of atomic layer deposition apparatus for preparing porous material inwall film, comprising: reaction cavity, two ends are respectively arranged with inlet mouth and air outlet; Clamping device is used for clamping porous material sample; Precursor source and carrier gas source are connected with said inlet mouth respectively through valve and pipeline, are used for feeding different presomas to said reaction cavity internal pulses; And vacuum pump, be connected with said air outlet through said pipeline, be used to remove said reaction cavity inner unnecessary said presoma and byproduct of reaction.
Further, said clamping device comprises: anchor clamps, be used for fixing said porous material sample, and be arranged at said reaction cavity inside; PWR PLT are used to drive said anchor clamps rotation, are arranged at said reaction cavity outside, and said reaction cavity is provided with the through hole that supplies rotating shaft to wear, and said PWR PLT are connected with said anchor clamps through said rotating shaft; Tightness system is arranged between said through hole and the said rotating shaft; And protector, be used to prevent to deposit said presoma to protect said rotating shaft and said tightness system.
Further; Said protector comprises gas tube that runs through said reaction cavity and the gas-holder that is connected with said gas tube; Be used to purge said rotating shaft and said tightness system to prevent to deposit said presoma, it is outside that said gas-holder is arranged at said reaction cavity.
Further, said reaction cavity also is provided with heating/refrigeration plant and temp probe.
Further, also be provided with exhaust gas processing device between said air outlet and the said vacuum pump.
For achieving the above object, the present invention also provides a kind of atomic layer deposition apparatus for preparing porous material inwall film, comprising: two end caps, be respectively arranged with inlet mouth and air outlet on each end cap, and be used to seal the two ends that are arranged on the porous material sample; Precursor source and carrier gas source are connected with said inlet mouth respectively through valve and pipeline, are used for feeding different presomas through said inlet mouth to said porous material sample interior pulse; And vacuum pump, be connected with said air outlet through said pipeline, be used to remove the unnecessary said presoma and the byproduct of reaction of said porous material sample interior.
Further, said end cap is arranged on the two ends of said porous material sample through the sealing-ring sealing.
Compared with prior art, the Atomic layer deposition method and the equipment thereof of preparation porous material inwall film of the present invention can improve the homogeneity of porous material ald film thickness, and then realize producing in batches; And, the clamping device suitable according to the shaped design of substrate, the porous material substrate that reaction chamber can be applicable to have different physical dimension has improved versatility, has reduced cost.
Description of drawings
Fig. 1 is the Atomic layer deposition method schema of preparation porous material inwall film of the present invention;
Fig. 2 is the user mode synoptic diagram one of the atomic layer deposition apparatus of preparation porous material inwall film of the present invention;
Fig. 3 is the user mode synoptic diagram two of the atomic layer deposition apparatus of preparation porous material inwall film of the present invention;
Fig. 4 is the user mode synoptic diagram three of the atomic layer deposition apparatus of preparation porous material inwall film of the present invention;
Fig. 5 is the user mode synoptic diagram four of the atomic layer deposition apparatus of preparation porous material inwall film of the present invention;
Fig. 6 is the structural representation of another embodiment of the atomic layer deposition apparatus of preparation porous material inwall film of the present invention.
Embodiment
Relevant technology contents of the present invention and detailed description, existing conjunction with figs. is explained as follows:
See also Fig. 1, the Atomic layer deposition method of preparation porous material inwall film of the present invention comprises:
Step S10: the porous material sample is arranged in the reaction cavity, said reaction cavity is carried out vacuum-treat.
Wherein, said reaction cavity can arbitrarily angledly be placed.In addition, said reaction cavity can axially rotate.
Step S20: the end ALT pulse to said porous material sample feeds different presomas, and said presoma reacts, and forms the film that is deposited on said porous material sample inwall, removes unnecessary presoma and byproduct of reaction.
Step S30: the other end ALT pulse to said porous material sample feeds different presomas, and said presoma reacts, and forms the film that is deposited on said porous material sample inwall, removes unnecessary presoma and byproduct of reaction.
Step S40: repeating said steps S20 and step S30 are until the film of deposition desired thickness.
Wherein: when said porous material sample is fixedly installed in the said reaction cavity, alternately feed said presoma to the internal pulses of said reaction cavity successively from opposite both direction;
When said porous material sample can be rotatably set in the said reaction cavity, feed different said presomas to the internal pulses of said reaction cavity respectively from identical direction.
Further, said porous material sample symmetry axis Rotate 180 degree radially.
Further, said presoma feeds said reaction cavity with spray pattern and cross-flow mode pulse.
Further, before the internal pulses to said reaction cavity fed said presoma, the Atomic layer deposition method of preparation porous material inwall film of the present invention also comprised: with the processing of heating or freeze of said reaction cavity.
Particularly; Among the embodiment one of the Atomic layer deposition method of preparation porous material inwall film of the present invention; The two ends of the reaction cavity of horizontal positioned are respectively A end and B end, are respectively arranged with inlet mouth and air outlet on A end and the B end, and the porous material sample is fixedly installed in the said reaction cavity; With two kinds of presomas (precursor A and precursor B) is example, and the preparation process of present embodiment is described:
Step 1: one or more porous material samples are arranged in the reaction cavity, said reaction cavity is carried out vacuum-treat.
Step 2: with the processing of heating or freeze of said reaction cavity; After treating that said reaction cavity reaches working temperature; Precursor A is fed said reaction cavity from the inlet mouth that A holds with the spray pattern pulse; Precursor A is retained in the inwall of said porous material sample through chemisorption or physical adsorption, and unnecessary precursor A is discharged from the air outlet of B end; Then; Precursor B is fed said reaction cavity from the inlet mouth that A holds with the spray pattern pulse; Precursor B and the said precursor A generation chemical reaction that is adsorbed on porous material sample inwall form thin film, and unnecessary precursor B and byproduct of reaction are discharged from the air outlet of B end.
Step 3: precursor A is fed said reaction cavity from the inlet mouth that B holds with the spray pattern pulse; Precursor A forms thin film with the precursor B generation chemical reaction that is adsorbed on said porous material sample inwall, and unnecessary precursor A and byproduct of reaction are discharged from the air outlet of A end; Precursor B is fed said reaction cavity from the inlet mouth that B holds with the spray pattern pulse, and after reaction and the absorption, unnecessary precursor B and byproduct of reaction are discharged from the air outlet of A end.
Step 4: recirculation above-mentioned steps two and step 3, until the coating film of the inwall of said porous material sample deposition desired thickness.
In the above-mentioned steps, precursor A and precursor B are with the duct of cross-flow mode through said porous material sample.
In the above-mentioned steps two, precursor A and precursor B also can feed said reaction cavity from the inlet mouth pulse of B end, and unnecessary presoma and byproduct of reaction are discharged from the air outlet of A end; Correspondingly, in the above-mentioned steps three, precursor A and precursor B feed said reaction cavity from the inlet mouth pulse of A end, and unnecessary presoma and byproduct of reaction bring out gas port from B and discharge.
Above-mentioned steps two can repeat a plurality of circulations, and correspondingly, above-mentioned steps three also can repeat a plurality of circulations.
Particularly; The embodiment two of the Atomic layer deposition method of preparation porous material inwall film of the present invention; Roughly the same with previous embodiment one, difference is: reaction cavity is for vertically placing, and the porous material sample can be rotatably set in the said reaction cavity.The preparation process of present embodiment and the difference of previous embodiment one are:
Step 3: with said porous material sample radially behind the symmetry axis Rotate 180 degree; Precursor A is fed said reaction cavity from the inlet mouth that A holds with the spray pattern pulse; After reaction and the absorption, unnecessary precursor A and byproduct of reaction are discharged from the air outlet of B end; Precursor B is fed said reaction cavity from the inlet mouth that A holds with the spray pattern pulse, and after reaction and the absorption, unnecessary precursor B and byproduct of reaction are discharged from the air outlet of B end.
In step 2 described in the present embodiment and the step 3, precursor A and precursor B also can feed said reaction cavity from the inlet mouth pulse of B end, and unnecessary presoma and byproduct of reaction are discharged from the air outlet of A end.
In sum; In the Atomic layer deposition method of preparation porous material inwall film of the present invention; Pulse through changing presoma feeds direction, and the direction of perhaps rotating said porous material sample realizes the alternate cycles pulse; Thereby guarantee the homogeneity of interior concentration of entire reaction cavity and temperature, accomplish atomic layer deposition process.
See also Fig. 2-Fig. 5, a kind of atomic layer deposition apparatus for preparing porous material inwall film of the present invention comprises: reaction cavity 10, precursor source, carrier gas source and vacuum pump.Wherein:
One end of reaction cavity 10 is provided with inlet mouth 11 and air outlet 13, and the other end is provided with inlet mouth 12 and air outlet 14.Reaction cavity 10 can arbitrarily angledly be placed, and in addition, reaction cavity 10 can axially rotate.The exit of reaction cavity 10 can also be provided with pressure transmitter, is used for the pressure change of dynamic monitoring reaction cavity 10.
Said clamping device is used for fixing or clamping porous material sample rotatably.Said clamping device comprises anchor clamps 15, PWR PLT, tightness system and protector, and wherein, anchor clamps 15 are used for fixing porous material sample 20, is arranged at reaction cavity 10 inside, and anchor clamps 15 can radially rotate, and also can realize axial rotation.Anchor clamps 15 are commercially available matured product with said PWR PLT, repeat no more at this.The quantity of anchor clamps 15 is one or more.Said PWR PLT are used to drive anchor clamps 15 rotations, are arranged at reaction cavity 10 outsides, and reaction cavity 10 is provided with the through hole that supplies rotating shaft to wear, and said PWR PLT are connected with said anchor clamps through said rotating shaft.Said tightness system is arranged between said through hole and the said rotating shaft.Said protector is used to prevent to deposit said presoma to protect said rotating shaft and said tightness system.
Said protector comprises gas tube that runs through said reaction cavity and the gas-holder that is connected with said gas tube, is used to purge said rotating shaft and said tightness system to prevent to deposit said presoma.Wherein, said gas-holder is arranged at reaction cavity 10 outsides.Said protector can be nitrogen protection device, i.e. gas-holder stored nitrogen, and said gas tube output said rotating shaft of nitrogen purging and said tightness system are to prevent to deposit said presoma.Not as limit, can also be other gas shield devices, any gas of not participating in reacting all can.
In addition, the shape of anchor clamps 15 can be thin slice shape, can also be cylindricality.For the porous material sample of large-size, can select the cylindricality anchor clamps, the two ends of porous material sample are fixing or with the center fixed of porous material sample.For the porous material sample of thinner thickness, can select the thin slice shaped clamp.The shape of anchor clamps is not as limit, and the Any shape that can match with the shape of porous material sample all can.In addition, for larger-size porous material sample, can each porous material sample be separately positioned on each anchor clamps 15, and, can a plurality of porous material samples be fixed on the same anchor clamps 15 for the less porous material sample of size.
Said precursor source and carrier gas source are connected with inlet mouth 11 respectively through valve and pipeline, are used for feeding different presomas to the internal pulses of reaction cavity 10.In addition, can also be provided with mass flow controller between the outlet of said carrier gas source and the inlet mouth 11, be used to control the flow of carrier gas.Wherein, said presoma is gaseous state, liquid state, solid-state or plasmoid; Liquid, solid-state said presoma can be brought reaction zone into through carrier gas, and the said presoma of gaseous state, plasmoid can directly get into reaction zone also can bring said reaction zone into through carrier gas; During actual the use, can feed presoma and/or carrier gas that valve control gets into inlet mouth 11.
Said vacuum pump is connected with air outlet 12 through said pipeline, is used to remove the unnecessary said presoma and the byproduct of reaction of reaction cavity 10 inside.In addition; Can also be provided with exhaust gas processing device between air outlet 12 and the said vacuum pump; Tail gas by unnecessary presoma and byproduct of reaction constitute is discharged by said vacuum pump after said exhaust gas processing device purifies again, to reduce the infringement that said tail gas causes said vacuum pump.
In addition, reaction cavity 10 also is provided with heating/refrigeration plant and temp probe, and said heating/refrigeration plant is used for heating or refrigeration reaction cavity 10.
A kind of method of use of the atomic layer deposition apparatus of preparation porous material inwall film of the present invention; Particular case is following: horizontal positioned reaction cavity 10; The set inside of reaction cavity 10 has anchor clamps 15; Anchor clamps 15 fixed clamp porous material samples 20 (two ends of clamping porous material sample 20), the two ends of porous material sample 20 are made as end face 21 and end face 22 respectively, and set inside has many ducts 23; Duct 23 schematically shows the internal structure and the characteristic of porous material sample 20, not with this condition as restriction porous material sample 20.With two kinds of presomas (precursor A and precursor B) is example, and its use is described:
Step 1: after one or more porous material samples 20 are arranged on reaction cavity 10; Reaction cavity 10 is carried out vacuum-treat, and the quantity of porous material sample 20 can rationally be set according to the volume of porous material sample 20 and the volume size of reaction cavity 10.
Step 2: with reaction cavity 10 processing of heating or freeze; After reaching working temperature; Precursor A is fed reaction cavity 10 from inlet mouth 11 with the spray pattern pulse; Precursor A is retained in duct 23 inwalls of porous material sample 20 through chemisorption or physical adsorption, and unnecessary precursor A 14 is discharged from the air outlet; Then; Precursor B is fed reaction cavity 10 from inlet mouth 11 with the spray pattern pulse; The precursor A generation chemical reaction of the inwall of precursor B and porous material sample 20 forms thin film, and unnecessary precursor B and byproduct of reaction be 14 discharges from the air outlet, and be as shown in Figure 2.
Step 3: precursor A is fed reaction cavity 10 from inlet mouth 12 with the spray pattern pulse, and reaction and adsorption process are identical with said process, repeat no more at this, and unnecessary precursor A and byproduct of reaction be 13 discharges from the air outlet; Precursor B is fed reaction cavity 10 from inlet mouth 12 with the spray pattern pulse, and after reaction and the absorption, unnecessary precursor B and byproduct of reaction be 13 discharges from the air outlet, and be as shown in Figure 3.
Step 4: recirculation above-mentioned steps two and step 3, until the coating film of the inwall of porous material sample 20 deposition desired thickness.
In the above-mentioned steps, precursor A and precursor B are with the duct 23 of cross-flow mode through porous material sample 20.
In the above-mentioned steps two, precursor A and precursor B also can feed reaction cavity 10 from inlet mouth 12 pulses, and unnecessary presoma and byproduct of reaction be 13 discharges from the air outlet; Correspondingly, in the above-mentioned steps three, precursor A and precursor B feed reaction cavity 10 from inlet mouth 11 pulses, and unnecessary presoma and byproduct of reaction be 14 discharges from the air outlet.
The another kind of method of use of the atomic layer deposition apparatus of preparation porous material inwall film of the present invention; Roughly the same with aforementioned method of use; Difference is: the two ends shape of reaction cavity 10 is different; Reaction cavity 10 is vertically to place, and the anchor clamps 15 in the reaction cavity 10 are clamping porous material sample 20 (centre of clamping porous material sample 20) rotatably, and the difference of use and aforementioned use is:
Step 3: with porous material sample 20 radially behind the symmetry axis Rotate 180 degree (like Fig. 4 and shown in Figure 5); Precursor A is fed reaction cavity 10 from inlet mouth 11 with the spray pattern pulse; After reaction and the absorption, unnecessary precursor A and byproduct of reaction be 14 discharges from the air outlet; Precursor B is fed reaction cavity 10 from inlet mouth 11 with the spray pattern pulse, and after reaction and the absorption, unnecessary precursor B and byproduct of reaction be 14 discharges from the air outlet.
In step 2 described in the present embodiment and the step 3, precursor A and precursor B also can feed reaction cavity 10 from inlet mouth 12 pulses, and unnecessary presoma and byproduct of reaction be 13 discharges from the air outlet.
In addition; Other a kind of embodiment of the atomic layer deposition apparatus of preparation porous material inwall film of the present invention; Comprise: two end caps 30, be respectively arranged with inlet mouth 31,32 and air outlet 33,34 on each end cap, be used to seal the two ends that are arranged on larger-size porous material sample 20; Precursor source and carrier gas source are connected with inlet mouth 31,32 respectively through valve and pipeline, are used for feeding different presomas through inlet mouth 31,32 to porous material sample 20 internal pulses; And vacuum pump, be connected with air outlet 33,34 through said pipeline, be used to remove the unnecessary said presoma and the byproduct of reaction of porous material sample 20 inside, as shown in Figure 6.
Wherein, end cap 30 is arranged on the two ends of porous material sample 20 through sealing-ring 35 sealings.
Annexation in the present embodiment is identical with method of use and previous embodiment, repeats no more at this.
Above-mentionedly being merely preferred embodiment of the present invention, is not to be used for limiting the scope that the present invention implements.Be that all equalizations of doing according to claims of the present invention change and modification, be claim of the present invention and contain.
Claims (13)
1. an Atomic layer deposition method for preparing porous material inwall film is characterized in that, comprising:
Step S10: the porous material sample is arranged in the reaction cavity, said reaction cavity is carried out vacuum-treat;
Step S20: the end ALT pulse to said porous material sample feeds different presomas, and said presoma reacts, and forms the film that is deposited on said porous material sample inwall, removes unnecessary presoma and byproduct of reaction;
Step S30: the other end ALT pulse to said porous material sample feeds different presomas, and said presoma reacts, and forms the film that is deposited on said porous material sample inwall, removes unnecessary presoma and byproduct of reaction;
Step S40: repeating said steps S20 and step S30 are until the film of deposition desired thickness.
2. the method for claim 1 is characterized in that, when said porous material sample is fixedly installed in the said reaction cavity, alternately feeds said presoma from opposite both direction to the internal pulses of said reaction cavity successively.
3. the method for claim 1 is characterized in that, when said porous material sample can be rotatably set in the said reaction cavity, feeds different said presomas to the internal pulses of said reaction cavity respectively from identical direction.
4. method as claimed in claim 3 is characterized in that, said porous material sample is symmetry axis Rotate 180 degree radially.
5. the method for claim 1 is characterized in that, said presoma feeds said reaction cavity with spray pattern and cross-flow mode pulse.
6. the method for claim 1 is characterized in that, before the ALT pulse of the inside of said reaction cavity feeds said presoma, this method also comprises: with the processing of heating or freeze of said reaction cavity.
7. an atomic layer deposition apparatus for preparing porous material inwall film is characterized in that, comprising:
Reaction cavity, two ends are respectively arranged with inlet mouth and air outlet;
Clamping device is used for clamping porous material sample;
Precursor source and carrier gas source are connected with said inlet mouth respectively through valve and pipeline, are used for feeding different presomas to said reaction cavity internal pulses; And
Vacuum pump is connected with said air outlet through said pipeline, is used to remove said reaction cavity inner unnecessary said presoma and byproduct of reaction.
8. equipment as claimed in claim 7 is characterized in that, said clamping device comprises:
Anchor clamps are used for fixing said porous material sample, are arranged at said reaction cavity inside;
PWR PLT are used to drive said anchor clamps rotation, are arranged at said reaction cavity outside, and said reaction cavity is provided with the through hole that supplies rotating shaft to wear, and said PWR PLT are connected with said anchor clamps through said rotating shaft;
Tightness system is arranged between said through hole and the said rotating shaft; And
Protector is used to prevent to deposit said presoma to protect said rotating shaft and said tightness system.
9. equipment as claimed in claim 8; It is characterized in that; Said protector comprises gas tube that runs through said reaction cavity and the gas-holder that is connected with said gas tube; Be used to purge said rotating shaft and said tightness system to prevent to deposit said presoma, it is outside that said gas-holder is arranged at said reaction cavity.
10. equipment as claimed in claim 7 is characterized in that said reaction cavity also is provided with heating/refrigeration plant and temp probe.
11. equipment as claimed in claim 7 is characterized in that, also is provided with exhaust gas processing device between said air outlet and the said vacuum pump.
12. an atomic layer deposition apparatus for preparing porous material inwall film is characterized in that, comprising:
Two end caps are respectively arranged with inlet mouth and air outlet on each end cap, be used to seal the two ends that are arranged on the porous material sample;
Precursor source and carrier gas source are connected with said inlet mouth respectively through valve and pipeline, are used for feeding different presomas through said inlet mouth to said porous material sample interior pulse; And
Vacuum pump is connected with said air outlet through said pipeline, is used to remove the unnecessary said presoma and the byproduct of reaction of said porous material sample interior.
13. equipment as claimed in claim 12 is characterized in that, said end cap is arranged on the two ends of said porous material sample through the sealing-ring sealing.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014121450A1 (en) * | 2013-02-05 | 2014-08-14 | Wang Dongjun | Roll-to-roll type atomic layer deposition equipment and method of use thereof |
| CN104364419A (en) * | 2012-06-15 | 2015-02-18 | 皮考逊公司 | Coating a substrate web by atomic layer deposition |
| CN105177530A (en) * | 2014-05-28 | 2015-12-23 | 王长津 | Preparation method of microporous atomizing sheet, microporous atomizing sheet and microporous atomization device |
| CN107815668A (en) * | 2017-12-05 | 2018-03-20 | 南京工业大学 | A kind of rotation ald reactor modified towards hollow-fibre membrane batch |
| CN108624869A (en) * | 2018-07-16 | 2018-10-09 | 深圳先进技术研究院 | Fixture and precipitation equipment for sheet material double-sided deposition coating |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101403108A (en) * | 2008-08-04 | 2009-04-08 | 李刚 | Chemical vapor deposition reactor and chemical vapor deposition method |
| US20100092698A1 (en) * | 2008-10-09 | 2010-04-15 | Sierra Solar Power, Inc. | Scalable, high-throughput, multi-chamber epitaxial reactor for silicon deposition |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101403108A (en) * | 2008-08-04 | 2009-04-08 | 李刚 | Chemical vapor deposition reactor and chemical vapor deposition method |
| US20100092698A1 (en) * | 2008-10-09 | 2010-04-15 | Sierra Solar Power, Inc. | Scalable, high-throughput, multi-chamber epitaxial reactor for silicon deposition |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104364419A (en) * | 2012-06-15 | 2015-02-18 | 皮考逊公司 | Coating a substrate web by atomic layer deposition |
| WO2014121450A1 (en) * | 2013-02-05 | 2014-08-14 | Wang Dongjun | Roll-to-roll type atomic layer deposition equipment and method of use thereof |
| CN105177530A (en) * | 2014-05-28 | 2015-12-23 | 王长津 | Preparation method of microporous atomizing sheet, microporous atomizing sheet and microporous atomization device |
| CN107815668A (en) * | 2017-12-05 | 2018-03-20 | 南京工业大学 | A kind of rotation ald reactor modified towards hollow-fibre membrane batch |
| CN107815668B (en) * | 2017-12-05 | 2023-05-23 | 南京工业大学 | Rotary atomic layer deposition reactor for batch modification of hollow fiber membranes |
| CN108624869A (en) * | 2018-07-16 | 2018-10-09 | 深圳先进技术研究院 | Fixture and precipitation equipment for sheet material double-sided deposition coating |
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