CN201766490U - Driving circuit based on IGBT bridge-type switch topology and protecting module thereof - Google Patents
Driving circuit based on IGBT bridge-type switch topology and protecting module thereof Download PDFInfo
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- CN201766490U CN201766490U CN2010202987053U CN201020298705U CN201766490U CN 201766490 U CN201766490 U CN 201766490U CN 2010202987053 U CN2010202987053 U CN 2010202987053U CN 201020298705 U CN201020298705 U CN 201020298705U CN 201766490 U CN201766490 U CN 201766490U
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Abstract
The utility model relates to a driving circuit based on IGBT bridge-type switch topology and a protecting module thereof, which are used for a frequency converter, an inverter and a switching power supply. The protecting module comprises a busbar current detecting unit, a threshold comparing unit, a lower bridge control unit and a fault feedback unit, wherein the busbar current detecting unit is used for detecting busbar current and converting detected current signals into voltage signals, the threshold comparing unit is used for comparing the voltage signals with a set reference voltage threshold, the lower bridge control unit is used for stabilizing positive gate electrode driving voltage of a lower bridge IGBT tube into second voltage smaller than the positive gate electrode driving voltage of the IGBT tube in normal work when the voltage signals are larger than the reference voltage threshold, the fault feedback unit is used for feeding fault signals to an MCU after the positive gate electrode driving voltage of the lower bridge IGBT tube is stabilized into the second voltage when the voltage signal is larger than the reference voltage threshold, and the MCU stops outputting gate electrode driving signals according to the fault signals. By adopting the technical scheme, the driving circuit and the protecting module can realize reliable short-circuit protection, and are low in cost.
Description
Technical field
The utility model relates to based on IGBT pipe (Insulated Gate Bipolar Transistor; insulated gate bipolar crystal oscillator pipe) drive circuit of bridge switch topology; more particularly, relate to a kind of drive circuit and protection module thereof that is used for frequency converter, inverter, Switching Power Supply based on IGBT pipe bridge formula switch topology.
Background technology
The IGBT tube device is because its low conduction loss, little average driving power and switching characteristic fast, general being applied in the equipment such as frequency converter, inverter, Switching Power Supply at present, the IGBT pipe is finished power transfer as the Primary Component of bridge switch topology.
Fig. 1 is the most common a kind of with IGBT tube device Q1, Q2, Q3, Q4, Q5, the Q6 bridge switch topological circuit as switch element on the market, and the driving method of its IGBT pipe has following several:
First kind is exactly to drive the IGBT pipe with not driving optocoupler with the special use of the collector emitter voltage Vce measuring ability (hereinafter to be referred as Vce voltage detecting function) of IGBT pipe; these drive optocoupler and comprise: ACPL-P314; TLP701; HCPL-3120; ACPL-T350 etc.; Fig. 2 is the drive circuit based on TLP701; when using such optocoupler to drive the IGBT pipe; it is the Q1 isolated drive circuit 1 among Fig. 1; Q3 isolated drive circuit 3; Q5 isolated drive circuit 5; Q2 isolated drive circuit 2; Q4 isolated drive circuit 4; Q6 isolated drive circuit 6 all adopts drive circuit shown in Figure 2; the characteristics that adopt this mode to drive the IGBT pipe are that circuit is simple, but do not have the effect of shoot through protection between output short-circuit and the IGBT pipe upper and lower bridge arm.
Second kind is to drive optocoupler with the special use that has Vce voltage detecting function to drive the IGBT pipe; these optocouplers comprise: ACPL-331J; HCPL-316J; PC929 etc.; when using such optocoupler to drive the IGBT pipe; it is the Q1 isolated drive circuit 1 among Fig. 1; Q3 isolated drive circuit 3; Q5 isolated drive circuit 5; Q2 isolated drive circuit 2; Q4 isolated drive circuit 4; Q6 isolated drive circuit 6; in this No. 6 drive circuit; have at least 3 the tunnel need adopt such optocoupler; drive the IGBT pipe in this way and can play short-circuit condition that detects the IGBT pipe and the effect of protecting the IGBT pipe; but circuit complexity; it is just very high to add the cost of this driving optocoupler own, causes the cost of entire circuit higher.
The utility model content
The technical problems to be solved in the utility model is; at the foregoing circuit cost height of prior art, the defective that can not shield to output short-circuit and the straight-through short circuit of upper and lower bridge arm; a kind of protection module of the drive circuit based on IGBT bridge switch topology is provided; can realize reliable short-circuit protection, and cost is low.
The technical scheme that its technical problem that solves the utility model adopts is: the protection module of constructing a kind of drive circuit based on IGBT bridge switch topology; this drive circuit is used for driving the IGBT pipe according to the gate electrode drive signals of MCU output, and described protection module comprises:
The bus current detecting unit that is used to detect bus current and the current signal that is detected is converted into voltage signal;
Connect described bus current detecting unit, be used for the threshold value comparing unit that the reference voltage threshold value with described voltage signal and setting compares;
Connect described threshold value comparing unit, be used at described voltage signal during greater than the reference voltage threshold value, to descend the following bridge control unit of positive gate driving voltage voltage stabilizing to the second voltage of bridge I GBT pipe, the positive gate driving voltage when described second voltage is managed operate as normal less than bridge IGBT under described;
Connect described threshold value comparing unit, be used at described voltage signal greater than the reference voltage threshold value, and behind positive gate driving voltage voltage stabilizing to the second voltage of described bridge IGBT pipe down, to the fault feedback unit of MCU feedback fault-signal, and MCU stops to export the positive gate drive signal according to described fault-signal.
In protection module described in the utility model; described bridge control unit down comprises first optocoupler; first diode; second diode; the 3rd diode; first voltage stabilizing didoe; second voltage stabilizing didoe and the 3rd voltage stabilizing didoe; wherein; the first level led positive pole of described first optocoupler connects first output of described threshold value comparing unit; the first level led negative pole of described first optocoupler connects second output of described threshold value comparing unit; the emitter of the phototriode of described first optocoupler connects negative busbar; the collector electrode of the phototriode of described first optocoupler connects the positive pole of first voltage stabilizing didoe respectively; the positive pole of the positive pole of second voltage stabilizing didoe and the 3rd voltage stabilizing didoe; the negative pole of first voltage stabilizing didoe; the negative pole of the negative pole of second voltage stabilizing didoe and the 3rd voltage stabilizing didoe connects the negative pole of first diode respectively; the negative pole of the negative pole of second diode and the 3rd diode, the positive pole of first diode; the positive pole of the positive pole of second diode and the 3rd diode connects the gate pole of bridge IGBT pipe under three tunnel respectively.
In protection module described in the utility model; described bridge control unit down also comprises first triode; second triode and the 3rd triode; wherein; the emitter of first triode; the emitter of the emitter of second triode and the 3rd triode connects the positive pole of first voltage stabilizing didoe respectively; the positive pole of the positive pole of second voltage stabilizing didoe and the 3rd voltage stabilizing didoe; the base stage of first triode; the base stage of the base stage of second triode and the 3rd triode connects the collector electrode of the phototriode of described first optocoupler respectively, the collector electrode of first triode; the collector electrode of the collector electrode of second triode and the 3rd triode connects negative busbar respectively.
In protection module described in the utility model; described bridge control unit down comprises second optocoupler; the 4th diode; the 5th diode; the 6th diode and the 4th voltage stabilizing didoe; wherein; the first level led positive pole of described second optocoupler connects first output of described threshold value comparing unit; the first level led negative pole of described second optocoupler connects second output of described threshold value comparing unit; the emitter of the phototriode of described second optocoupler connects negative busbar; the collector electrode of the phototriode of described second optocoupler connects the positive pole of the 4th voltage stabilizing didoe; the negative pole of the 4th voltage stabilizing didoe connects the negative pole of the 4th diode respectively; the negative pole of the negative pole of the 5th diode and the 6th diode, the positive pole of the 4th diode; the positive pole of the positive pole of the 5th diode and the 6th diode connects the gate pole of bridge IGBT pipe under three tunnel respectively.
In protection module described in the utility model; described bridge control unit down also comprises the 4th triode; the emitter of described the 4th triode connects the positive pole of the 4th voltage stabilizing didoe; the base stage of described the 4th triode connects the collector electrode of the phototriode of described second optocoupler, and the collector electrode of described the 4th triode connects negative busbar.
The utility model is also constructed a kind of drive circuit based on IGBT bridge switch topology, is used for driving the IGBT pipe according to the gate electrode drive signals of MCU output, and described drive circuit comprises above-described protection module.
The utility model is also constructed a kind of IGBT bridge switch topology, comprises MCU, and is used for driving according to the gate electrode drive signals of MCU output the drive circuit of IGBT pipe, and described drive circuit comprises above-described protection module.
The utility model is also constructed a kind of frequency converter, comprises above-described IGBT bridge switch topology.
The utility model is also constructed a kind of inverter, comprises above-described IGBT bridge switch topology.
The utility model is also constructed a kind of Switching Power Supply, comprises above-described IGBT bridge switch topology.
Implement the technical solution of the utility model; when output short-circuit or IGBT pipe upper and lower bridge arm shoot through takes place; to descend positive gate driving voltage voltage stabilizing to the second voltage of bridge IGBT pipe by following bridge control unit; positive gate driving voltage when second voltage is managed operate as normal less than IGBT; to MCU feedback fault-signal, therefore, this scheme can realize reliable short-circuit protection then; and owing to need not to adopt expensive chip for driving, so cost can reduce greatly.
Description of drawings
The utility model is described in further detail below in conjunction with drawings and Examples, in the accompanying drawing:
Fig. 1 is a kind of circuit diagram based on IGBT bridge switch topology of prior art;
Fig. 2 is a kind of Q1 isolated drive circuit circuit diagram among Fig. 1;
Fig. 3 is the building-block of logic of the utility model based on the protection module embodiment one of the drive circuit of IGBT bridge switch topology;
Fig. 4 is the circuit diagram of the utility model IGBT bridge switch topology embodiment one;
Fig. 5 is the circuit diagram of the utility model IGBT bridge switch topology embodiment two.
Embodiment
Fig. 3 is the building-block of logic of the protection module embodiment one of the drive circuit based on IGBT bridge switch topology of the present utility model; in conjunction with Fig. 1, the Q1 isolated drive circuit 1 in the drive circuit 00, Q3 isolated drive circuit 3, Q5 isolated drive circuit 5, Q2 isolated drive circuit 2, Q4 isolated drive circuit 4, Q6 isolated drive circuit 6 drive IGBT pipe Q1, Q3, Q5, Q2, Q4, Q6 according to the gate electrode drive signals of MCU output respectively.Should be noted that, bridge switch topology among all embodiment of the utility model is that example describes with 6 IGBT pipe output three-phase inversion voltages all, but it is 6 that the utility model does not limit the quantity of IGBT pipe, also can be 4, at the IGBT pipe is 4 o'clock, and what this bridge switch topology was exported is single-phase inversion voltage.This protection module comprises bus current detecting unit 8, threshold value comparing unit 9, fault feedback unit 10 and following bridge control unit 11, specifies each unit below:
Bus current detecting unit 8 is used to detect bus current and the current signal that is detected is converted into voltage signal;
Threshold value comparing unit 9 connects described bus current detecting unit 8, is used for the reference voltage threshold value of described voltage signal and setting is compared;
Following bridge control unit 11, connect described threshold value comparing unit 9, be used at described voltage signal during positive gate driving voltage voltage stabilizing to the second voltage of bridge IGBT pipe down, described second voltage positive gate driving voltage during less than the described pipe of bridge IGBT down operate as normal greater than the reference voltage threshold value;
In the circuit diagram of the topology of the utility model IGBT bridge switch shown in Fig. 4 embodiment one, this IGBT bridge switch topology comprises that MCU 7, drive circuit and six IGBT manage Q1, Q2, Q3, Q4, Q5, Q6, stress drive circuit below, drive circuit comprises Q1 isolated drive circuit 1, Q3 isolated drive circuit 3, Q5 isolated drive circuit 5, Q2 isolated drive circuit 2, Q4 isolated drive circuit 4, Q6 isolated drive circuit 6, bus current detecting unit 8, threshold value comparing unit 9, fault feedback unit 10 and following bridge control unit 11.Wherein, Q1 isolated drive circuit 1, Q3 isolated drive circuit 3, Q5 isolated drive circuit 5, Q2 isolated drive circuit 2, Q4 isolated drive circuit 4, Q6 isolated drive circuit 6 are managed Q1, Q2, Q3, Q4, Q5, Q6 according to six IGBT of 6 gate electrode drive signals control of MCU 7 outputs respectively; Bus current detecting unit 8 is used to detect bus current and the current signal that is detected is converted into voltage signal, as, sampling resistor is connected on positive bus-bar P goes up or sampling resistor is connected on the negative busbar N, detect the voltage of sampling resistor then; Threshold value comparing unit 9 is used for the reference voltage threshold value of described voltage signal and setting is compared, and this threshold value comparing unit can be comparator or the combinational circuit that has the adjustable shunting a reference source of three ends; Following bridge control unit 11 is used at described voltage signal during greater than the reference voltage threshold value, positive gate driving voltage voltage stabilizing to the second voltage of bridge IGBT pipe down, described second voltage positive gate driving voltage during less than IGBT pipe operate as normal; Fault feedback unit 10 is used at described voltage signal greater than the reference voltage threshold value, and behind positive gate driving voltage voltage stabilizing to the second voltage of described bridge IGBT pipe down, to MCU feedback fault-signal, and MCU stops to export gate electrode drive signals according to described fault-signal.
The following describes down the circuit of bridge control unit 11, in Fig. 4, the first level led positive pole of optocoupler OP1 connects first output of threshold value comparing unit 9, the first level led negative pole of optocoupler OP1 connects second output of threshold value comparing unit 9, the emitter of the phototriode of optocoupler OP1 connects negative busbar N, the collector electrode of the phototriode of optocoupler OP1 connects the base stage of triode Q7 respectively, the base stage of the base stage of triode Q8 and triode Q9, the collector electrode of triode Q7, the collector electrode of the collector electrode of triode Q8 and triode Q9 meets negative busbar N respectively, the emitter of triode Q7, the emitter of the emitter of triode Q8 and triode Q9 connects the positive pole of voltage stabilizing didoe Z1 respectively, the positive pole of the positive pole of voltage stabilizing didoe Z2 and voltage stabilizing didoe Z3, the negative pole of voltage stabilizing didoe Z1, the negative pole of the negative pole of voltage stabilizing didoe Z2 and voltage stabilizing didoe Z3 connects the negative pole of diode D1 respectively, the negative pole of the negative pole of diode D2 and diode D3, the positive pole of diode D1, the positive pole of the positive pole of diode D2 and diode D3 meets bridge IGBT pipe Q2 under three tunnel respectively, Q4, the gate pole of Q6, capacitor C 1 are connected between the emitter of phototriode of the collector electrode of phototriode of optocoupler OP1 and optocoupler OP1.
Specify the operation principle of this IGBT bridge switch topology below in conjunction with Fig. 4:
If the straight-through situation of output short circuit or upper and lower bridge arm takes place, the electric current that then flows through on the dc bus (flowing to N from P) sharply increases, bus current detecting unit 8 detects this fault current, and after carrying out a certain proportion of processing and amplifying, convert it into and the proportional failure voltage signal of fault current, send into threshold value comparing unit 9.
Comprise a pre-set reference voltage threshold value in the threshold value comparing unit 9, the bus current value of the corresponding required protection of this reference voltage threshold value.The failure voltage signal of bringing from bus current detecting unit 8 is in case greater than the reference voltage threshold value, and then threshold value comparing unit 9 is exported two paths of signals at once.Wherein, the one tunnel is used for driving down bridge control unit 11, and other one the tunnel is used for driving malfunction feedback unit 10.
Following bridge control unit 11 is core function circuitry of the present utility model, acting as of its each several part element: optocoupler OP1 is used for the drive signal of receive threshold comparing unit 9, and control triode Q7, Q8, Q9 conducting simultaneously, in order to guarantee the response speed of optocoupler OP1, can adopt the rapid light coupling device.Capacitor C 1 is used for the filtering noise information interference signal.Triode Q7, Q8, Q9 utilize the positive gate driving voltage of bridge IGBT pipe Q2, Q4, Q6 down and conducting, and when having any IGBT pipe to be in negative gate drive voltage among a certain moment Q2, Q4, the Q6, the triode that links to each other of IGBT pipe just can not conducting therewith.Voltage stabilizing didoe Z1, Z2, Z3 are used to set down nonserviceable down second voltage of (this moment, the gate electrode drive signals of MCU 7 was not cancelled) of bridge IGBT pipe Q2, Q4, Q6.By adjusting the voltage stabilizing value (representing) of voltage stabilizing didoe Z1, Z2, Z3, just can make the positive gate driving voltage of the following bridge IGBT pipe that is in overcurrent or short trouble state drop to the level (i.e. second voltage) that approximates Vz with Vz.Positive gate driving voltage when the voltage stabilizing value that it should be noted that voltage stabilizing didoe Z1, Z2, Z3 must be managed operate as normal less than IGBT.Diode D1, D2, D3 are fast recovery diode or Schottky diode, are used to stop the negative gate drive voltage of bridge IGBT pipe Q2, Q4, Q6 down, avoid down bridge IGBT to manage influencing each other between the positive gate driving voltage of Q2, Q4, Q6 simultaneously.Should be noted that in another embodiment triode Q7, Q8, Q9 also can save.
Details are as follows for the operation principle of following bridge control unit 11: give optocoupler OP1 when threshold value comparing unit 9 and send drive signal here, the elementary lumination of light emitting diode of optocoupler OP1, the secondary phototriode of optocoupler OP1 promptly begins conducting, this at present among bridge IGBT pipe Q2, Q4, the Q6 all IGBT pipes that are in the positive gate driving voltage under can both provide a base bias current to impel this triode conducting to the triode that is attached thereto.For example: suppose that at a time the bridge switch topology is in normal operating conditions, IGBT pipe Q1 wherein, Q4, Q6 is conducting, on this basis, because extraneous interference signal, cause Q2 isolated drive circuit 2 to export a positive gate driving voltage and give bridge IGBT pipe Q2 down, caused misleading of time bridge IGBT pipe Q2, this moment is because IGBT pipe Q1, all conductings of Q2 (being referred to as bridge arm direct pass), can between IGBT pipe Q1 and IGBT pipe Q2, flow through huge short circuit current, this short circuit current is detected, and make the secondary conducting of optocoupler OP1, because IGBT pipe Q2, Q4, Q6 is under the positive gate driving voltage, the then diode D1 conducting that links to each other with the gate pole of IGBT pipe Q2, voltage stabilizing didoe Z1 is breakdown, triode Q7 conducting, the positive gate driving voltage clamper of IGBT being managed Q2 is approximating the voltage stabilizing value of Z1 (i.e. second voltage).Same reason, with the diode D2 conducting that the gate pole of IGBT pipe Q4 links to each other, voltage stabilizing didoe Z2 is breakdown, triode Q8 conducting, the positive gate driving voltage clamper of IGBT being managed Q4 is approximating the voltage stabilizing value of Z2 (i.e. second voltage); With the diode D3 conducting that the gate pole of IGBT pipe Q6 links to each other, voltage stabilizing didoe Z3 is breakdown, triode Q9 conducting, and the positive gate driving voltage clamper of IGBT being managed Q6 is approximating the voltage stabilizing value of Z3 (i.e. second voltage).Characteristic according to IGBT, when the positive gate driving voltage reduces, it is big that internal resistance meeting between its collector and emitter becomes, the positive gate driving voltage of IGBT pipe Q2, Q4, Q6 is all owing to the clamping action of voltage stabilizing didoe Z1, Z2, Z3 reduces now, resistive is big in its conducting, play rapid inhibition and flow through the effect of the electric current of IGBT pipe Q1, Q2, Q4, Q6, electric current in the whole bridge switch topology is inhibited, limited the du/dt on the IGBT pipe collector, reduce the overvoltage spike on the IGBT pipe collector, guarantee that the IGBT pipe is not damaged between age at failure.
The effect of fault feedback unit 10 be with fault message by isolate and filtering after feed back to MCU 7, lag behind the operate time that the transmission time of this fault feedback signal is set at than following bridge control unit 11, help optocoupler OP1 before MCU receives the fault feedback signal with regard to conducting, make down the positive gate driving voltage of bridge IGBT pipe Q2, Q4, Q6 be in second voltage earlier, stop to send the gate electrode drive signals of IGBT pipe again by MCU 7, the output of six road isolated drive circuits 1,3,5,2,4,6 is blocked, and IGBT pipe Q1, Q2, Q3, Q4, Q5, Q6 quit work.
Fig. 5 is the circuit diagram of the utility model IGBT bridge switch topology embodiment two, should be noted that, this IGBT bridge switch topology embodiment does not do at this with the same section of the topological embodiment one of IGBT bridge switch shown in Figure 4 and gives unnecessary details, different parts below only is described: in following bridge control unit 11, the first level led positive pole of optocoupler OP2 connects first output of threshold value comparing unit 9, the first level led negative pole of optocoupler OP2 connects second output of threshold value comparing unit 9, the emitter of the phototriode of optocoupler OP2 connects negative busbar N, the base stage of the collector connecting transistor Q10 of the phototriode of optocoupler OP2, the collector electrode of triode Q10 meets negative busbar N, the emitter of triode Q10 connects the positive pole of voltage stabilizing didoe Z4, the negative pole of voltage stabilizing didoe Z4 connects the negative pole of diode D4, the negative pole of the negative pole of diode D5 and diode D6, the positive pole of diode D4, the positive pole of the positive pole of diode D5 and diode D6 meets bridge IGBT pipe Q2 under three tunnel respectively, Q4, the gate pole of Q6.The principle of the operation principle of the following bridge control unit 11 among this embodiment following bridge control unit 11 as shown in Figure 4 is identical, does not do at this and gives unnecessary details.Implement the technical scheme of present embodiment, decapacitation realizes that circuit is simpler outside the reliable short-circuit protection.
In addition, in frequency converter that the utility model is constructed, inverter, Switching Power Supply, all can comprise above-described IGBT bridge switch topology, not repeat them here.
The above is a preferred embodiment of the present utility model only, is not limited to the utility model, and for a person skilled in the art, the utility model can have various changes and variation.All within spirit of the present utility model and principle, any modification of being done, be equal to replacement, improvement etc., all should be included within the claim scope of the present utility model.
Claims (10)
1. protection module based on the drive circuit of IGBT bridge switch topology, this drive circuit are used for driving the IGBT pipe according to the gate electrode drive signals of MCU output, it is characterized in that described protection module comprises:
The bus current detecting unit that is used to detect bus current and the current signal that is detected is converted into voltage signal;
Connect described bus current detecting unit, be used for the threshold value comparing unit that the reference voltage threshold value with described voltage signal and setting compares;
Connect described threshold value comparing unit, be used at described voltage signal during greater than the reference voltage threshold value, to descend the following bridge control unit of positive gate driving voltage voltage stabilizing to the second voltage of bridge IGBT pipe, the positive gate driving voltage when described second voltage is managed operate as normal less than bridge IGBT under described;
Connect described threshold value comparing unit, be used at described voltage signal greater than the reference voltage threshold value, and behind positive gate driving voltage voltage stabilizing to the second voltage of described bridge IGBT pipe down, to the fault feedback unit of MCU feedback fault-signal, and MCU stops to export the positive gate drive signal according to described fault-signal.
2. protection module according to claim 1; it is characterized in that; described bridge control unit down comprises first optocoupler; first diode; second diode; the 3rd diode; first voltage stabilizing didoe; second voltage stabilizing didoe and the 3rd voltage stabilizing didoe; wherein; the first level led positive pole of described first optocoupler connects first output of described threshold value comparing unit; the first level led negative pole of described first optocoupler connects second output of described threshold value comparing unit; the emitter of the phototriode of described first optocoupler connects negative busbar; the collector electrode of the phototriode of described first optocoupler connects the positive pole of first voltage stabilizing didoe respectively; the positive pole of the positive pole of second voltage stabilizing didoe and the 3rd voltage stabilizing didoe; the negative pole of first voltage stabilizing didoe; the negative pole of the negative pole of second voltage stabilizing didoe and the 3rd voltage stabilizing didoe connects the negative pole of first diode respectively; the negative pole of the negative pole of second diode and the 3rd diode, the positive pole of first diode; the positive pole of the positive pole of second diode and the 3rd diode connects the gate pole of bridge IGBT pipe under three tunnel respectively.
3. protection module according to claim 2; it is characterized in that; described bridge control unit down also comprises first triode; second triode and the 3rd triode; wherein; the emitter of first triode; the emitter of the emitter of second triode and the 3rd triode connects the positive pole of first voltage stabilizing didoe respectively; the positive pole of the positive pole of second voltage stabilizing didoe and the 3rd voltage stabilizing didoe; the base stage of first triode; the base stage of the base stage of second triode and the 3rd triode connects the collector electrode of the phototriode of described first optocoupler respectively, the collector electrode of first triode; the collector electrode of the collector electrode of second triode and the 3rd triode connects negative busbar respectively.
4. protection module according to claim 1; it is characterized in that; described bridge control unit down comprises second optocoupler; the 4th diode; the 5th diode; the 6th diode and the 4th voltage stabilizing didoe; wherein; the first level led positive pole of described second optocoupler connects first output of described threshold value comparing unit; the first level led negative pole of described second optocoupler connects second output of described threshold value comparing unit; the emitter of the phototriode of described second optocoupler connects negative busbar; the collector electrode of the phototriode of described second optocoupler connects the positive pole of the 4th voltage stabilizing didoe; the negative pole of the 4th voltage stabilizing didoe connects the negative pole of the 4th diode respectively; the negative pole of the negative pole of the 5th diode and the 6th diode, the positive pole of the 4th diode; the positive pole of the positive pole of the 5th diode and the 6th diode connects the gate pole of bridge IGBT pipe under three tunnel respectively.
5. protection module according to claim 4; it is characterized in that; described bridge control unit down also comprises the 4th triode; the emitter of described the 4th triode connects the positive pole of the 4th voltage stabilizing didoe; the base stage of described the 4th triode connects the collector electrode of the phototriode of described second optocoupler, and the collector electrode of described the 4th triode connects negative busbar.
6. the drive circuit based on IGBT bridge switch topology is used for driving the IGBT pipe according to the gate electrode drive signals of MCU output, it is characterized in that described drive circuit comprises each described protection module of claim 1 to 5.
7. an IGBT bridge switch topology comprises MCU, and is used for driving according to the gate electrode drive signals of MCU output the drive circuit of IGBT pipe, it is characterized in that described drive circuit comprises each described protection module of claim 1 to 5.
8. a frequency converter is characterized in that, comprises the described IGBT bridge switch of claim 7 topology.
9. an inverter is characterized in that, comprises the described IGBT bridge switch of claim 7 topology.
10. a Switching Power Supply is characterized in that, comprises the described IGBT bridge switch of claim 7 topology.
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| CN2010202987053U CN201766490U (en) | 2010-08-20 | 2010-08-20 | Driving circuit based on IGBT bridge-type switch topology and protecting module thereof |
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| CN2010202987053U CN201766490U (en) | 2010-08-20 | 2010-08-20 | Driving circuit based on IGBT bridge-type switch topology and protecting module thereof |
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| CN102377326A (en) * | 2010-08-20 | 2012-03-14 | 深圳市澳地特电气技术有限公司 | Insulated gate bipolar transistor (IGBT)-bridge-switch-topology-based driving circuit and protection module thereof |
| CN103001187A (en) * | 2011-09-07 | 2013-03-27 | 西门子公司 | Frequency inverter and method for detecting and blocking a fault current in a frequency inverter |
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| CN102377326A (en) * | 2010-08-20 | 2012-03-14 | 深圳市澳地特电气技术有限公司 | Insulated gate bipolar transistor (IGBT)-bridge-switch-topology-based driving circuit and protection module thereof |
| CN102377326B (en) * | 2010-08-20 | 2014-04-02 | 深圳市澳地特电气技术有限公司 | Insulated gate bipolar transistor (IGBT)-bridge-switch-topology-based driving circuit and protection module thereof |
| CN103001187A (en) * | 2011-09-07 | 2013-03-27 | 西门子公司 | Frequency inverter and method for detecting and blocking a fault current in a frequency inverter |
| CN103715655A (en) * | 2012-09-28 | 2014-04-09 | 松下电器产业株式会社 | Overcurrent protection device, power tool and overcurrent protection circuit |
| CN104113191B (en) * | 2013-06-05 | 2017-06-23 | 广东美的制冷设备有限公司 | A kind of SPM |
| CN104113191A (en) * | 2013-06-05 | 2014-10-22 | 广东美的制冷设备有限公司 | Intelligent power module |
| CN104112740B (en) * | 2013-09-23 | 2017-02-15 | 广东美的制冷设备有限公司 | Intelligent power module and manufacturing method thereof |
| CN104795787A (en) * | 2014-01-21 | 2015-07-22 | 上海海拉电子有限公司 | Protection circuit, drive control system and control method of drive control system |
| CN104795787B (en) * | 2014-01-21 | 2018-06-12 | 上海海拉电子有限公司 | A kind of protection circuit, driving control system and its control method |
| CN105375750A (en) * | 2015-12-17 | 2016-03-02 | 南京工程学院 | Driving protection circuit for preventing bridge arm direct connection |
| CN106911250A (en) * | 2015-12-22 | 2017-06-30 | 瑞萨电子株式会社 | Electric power coversion system, power model and semiconductor devices |
| CN106911250B (en) * | 2015-12-22 | 2020-07-24 | 瑞萨电子株式会社 | Power conversion system, power module, and semiconductor device |
| CN106711954A (en) * | 2017-03-10 | 2017-05-24 | 常熟理工学院 | Fast-response over-current and short-circuit protection circuit |
| CN106711954B (en) * | 2017-03-10 | 2019-05-17 | 常熟理工学院 | A kind of fast-response short circuit over-current protection circuit |
| CN110806548A (en) * | 2018-07-18 | 2020-02-18 | 广东威灵汽车部件有限公司 | Fault detection circuit and method for motor inverter |
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