CN201752001U - 整流二极管 - Google Patents

整流二极管 Download PDF

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Publication number
CN201752001U
CN201752001U CN 201020247031 CN201020247031U CN201752001U CN 201752001 U CN201752001 U CN 201752001U CN 201020247031 CN201020247031 CN 201020247031 CN 201020247031 U CN201020247031 U CN 201020247031U CN 201752001 U CN201752001 U CN 201752001U
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China
Prior art keywords
copper
chip
rectifier diode
pin
wire jumper
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Expired - Lifetime
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CN 201020247031
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English (en)
Inventor
安国星
李述洲
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Chongqing Pingwei Enterprise Co Ltd
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Chongqing Pingwei Enterprise Co Ltd
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Priority to CN 201020247031 priority Critical patent/CN201752001U/zh
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Publication of CN201752001U publication Critical patent/CN201752001U/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Rectifiers (AREA)

Abstract

本实用新型公开了一种整流二极管，包括环氧塑封体、芯片以及铜料片，所述芯片与铜料片的引脚通过铜跳线相连，铜跳线的两端分别用焊料与芯片和铜料片的引脚焊接。由于本实用新型将传统的铝线设计为铜跳线，增加了产品部件间的焊接面积及焊接强度，不仅可保证铜跳线不会被塑封过程中的环氧树脂冲击断开，避免失去整流特征，还可显著改善传统整流二极管正向偏高以及散热效果差的现状。

Description

整流二极管
技术领域
本实用新型涉及一种整流二极管，属于半导体器件领域。
背景技术
整流二极管是最基本的半导体器件，主要作用为将交流电转变为直流电，广泛应用于各种电子线路。现有整流二极管均是由环氧塑封体、芯片以及铜料片组成，其中铜料片与芯片间采用铝线焊接，这种焊接结构的强度不是很高，在塑封过程中，铝线易受环氧树脂冲击而易断开，从而导致其失去整流特征；另外采用铝线焊接使得产品部件间的焊接面积较小，易使产品的正向偏高，而且散热效果也较差。
实用新型内容
本实用新型所要解决的技术问题是针对现有技术的不足，提供一种整流二极管，其既可避免塑封过程中焊接部件间断开而失去整流特征，又可改善现有整流二极管正向偏高以及散热效果差的现状。
本实用新型的技术方案为：一种整流二极管，包括环氧塑封体、芯片以及铜料片，所述芯片与铜料片的引脚通过铜跳线相连，铜跳线的两端分别用焊料与芯片和铜料片的引脚焊接。
其中，所述铜跳线、铜跳线与芯片和引脚焊接部分封装在环氧树脂注塑封装的塑封体内。
本实用新型的有益效果在于：由于本实用新型将传统的铝线设计为铜跳线，增加了产品部件间的焊接面积及焊接强度，不仅可保证铜跳线不会被塑封过程中的环氧树脂冲击断开，避免失去整流特征，还可显著改善传统整流二极管正向偏高以及散热效果差的现状。
附图说明
图1为本实用新型剖开环氧塑封体后的结构示意图图示一；
图2为本实用新型剖开环氧塑封体后的结构示意图图示二。
具体实施方式
如图1、图2所示，一种整流二极管，包括环氧塑封体1、芯片2、铜料片3以及铜跳线4，所述芯片2与铜料片3上的引脚5通过封装在壳体1内的铜跳线4相连，铜跳线4的两端分别用焊料与芯片2和铜料片3上的引脚5焊接。其中，所述铜跳线4、铜跳线4与芯片2和引脚5焊接部分封装在环氧树脂注塑封装的塑封体1内。
由于本实用新型将传统的铝线设计为铜跳线4，增加了产品部件间的焊接面积及焊接强度，不仅可保证铜跳线4不会被塑封过程中的环氧树脂冲击断开，避免失去整流特征，还可显著改善传统整流二极管正向偏高以及散热效果差的现状。

Claims (2)

1.一种整流二极管，包括壳体、芯片以及铜料片，其特征在于：所述芯片与铜料片的引脚通过铜跳线相连，铜跳线的两端分别用焊料与芯片和铜料片的引脚焊接。
2.根据权利要求1所述的整流二极管，其特征在于：所述铜跳线、铜跳线与芯片和引脚焊接部分封装在环氧树脂注塑封装的环氧塑封体内。
CN 201020247031 2010-07-02 2010-07-02 整流二极管 Expired - Lifetime CN201752001U (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201020247031 CN201752001U (zh) 2010-07-02 2010-07-02 整流二极管

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201020247031 CN201752001U (zh) 2010-07-02 2010-07-02 整流二极管

Publications (1)

Publication Number Publication Date
CN201752001U true CN201752001U (zh) 2011-02-23

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103426851A (zh) * 2013-08-21 2013-12-04 无锡罗姆半导体科技有限公司 一种电压调节器
CN105552056A (zh) * 2016-02-03 2016-05-04 泰州优宾晶圆科技有限公司 一种银面高压平面式mos肖特基二极管

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103426851A (zh) * 2013-08-21 2013-12-04 无锡罗姆半导体科技有限公司 一种电压调节器
CN105552056A (zh) * 2016-02-03 2016-05-04 泰州优宾晶圆科技有限公司 一种银面高压平面式mos肖特基二极管

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