CN201726316U - Resonance type power conversion circuit - Google Patents
Resonance type power conversion circuit Download PDFInfo
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- CN201726316U CN201726316U CN2010202201500U CN201020220150U CN201726316U CN 201726316 U CN201726316 U CN 201726316U CN 2010202201500 U CN2010202201500 U CN 2010202201500U CN 201020220150 U CN201020220150 U CN 201020220150U CN 201726316 U CN201726316 U CN 201726316U
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Abstract
A resonance type power conversion circuit comprises a resonance type conversion unit, a control unit, a current detection unit, a voltage detection unit and a frequency modulation unit. The control unit outputs a conversion signal to the resonance type conversion unit for adjusting the output. The current detection unit and the voltage detection unit are respectively used for detecting the output current and the output voltage of the resonance type conversion unit. The frequency modulation unit modulates a lowest conversion frequency of the control unit according to the detected output current and output voltage, thereby improving the gain of the resonance type conversion unit and improving the output stability.
Description
Technical field
The utility model relates to a kind of electric power converter, and is particularly related to a kind of resonant mode power conversion circuit.
Background technology
The lifting of environmental consciousness in recent years with the global warming problem, forces energy savings to become one of countries in the world important policies.(U.S.Environmental Protection Agency EPA) also stipulates the order ground of high efficiency standard to go to reach energy-conservation relatively for every information electronic device, as the basic money demand (80% of 80+ is arranged on the PC power source supply in U.S. environment association, 80%, 80%), bronze medal (82%, 85%, 82%), silver medal (85%, 88%, 85%), gold medal (87%, 90%, 87%) authentication is the difficult problem that we must overcome at present so improve the efficient of power supply changeover device.Under efficient require to continue promoted, (pulse width modulation, PWM) forward type of control mode frameworks such as (forward) was that the conversion efficiency of main power source (main converter) has been not enough to reach requirement in the pulse width modulation of adopting at present.Generally speaking, front end DC/DC electric power converter mainly can be divided into PWM electric power converter and resonant mode electric power converter.Belong to rigid switching because PWM electric power converter switch switches, cause serious switch cost easily, make power conversion efficiency to promote, the resonant mode electric power converter so develop.Resonant circuit itself has the flexible characteristic of switching, and can reduce the switch switch cost, promotes the transducer whole efficiency, so the main power source of resonant mode converter architecture (resonant converter) begins to be widely used.
Traditional resonant mode electric power converter mainly comprises three types: (1) serial-resonant electric power converter (Series Resonant Converter is called for short SRC); (2) parallel resonance formula electric power converter (Parallel Resonant Converter is called for short PRC) and (3) series parallel resonance formula electric power converter (Series-Parallel Resonant Converter is called for short SPRC, is called LCC again).The controller of resonant mode electric power converter can be exported switching signal to the power switch in the resonant mode electric power converter and control its output voltage.Yet traditional controller has the restriction of switching frequency, so the gain of transducer can be restricted and is easy to generate the situation of output voltage deficiency.
The utility model content
The utility model provides a kind of resonant mode power conversion circuit; the minimum switching frequency of its middle controller can be adjusted according to the output current or the output voltage of resonant mode transducer; allow the resonant mode transducer be operable under the maximum gain point by this, allow the output voltage of resonant mode transducer can the compliance with system demand to increase the effect of output voltage and overvoltage protection.
The utility model provides a kind of resonant mode power conversion circuit, and the minimum switching frequency of its middle controller can be adjusted according to the output current of resonant mode transducer, improves the voltage gain of resonant mode power conversion circuit when peak load by this.
The utility model provides a kind of resonant mode power conversion circuit, and the minimum switching frequency of its middle controller can be adjusted according to the output voltage of resonant mode transducer, improves the overvoltage protection ability of resonant mode power conversion circuit when feedback is out of control by this.
The utility model proposes a kind of resonant mode power conversion circuit, comprise a resonant mode converting unit, a control unit, a current detecting unit, a voltage detection unit and a frequency modulation unit.Control unit is coupled to above-mentioned resonant mode converting unit, extremely above-mentioned resonant mode converting unit is to adjust an output voltage of above-mentioned resonant mode converting unit in order to export at least one first switching signal, and wherein above-mentioned control unit has a minimum switching frequency to limit the frequency of above-mentioned first switching signal.Current detecting unit is coupled to the output of above-mentioned resonant mode converting unit to detect an output current of above-mentioned resonant mode converting unit.Voltage detection unit is coupled to the output of above-mentioned resonant mode converting unit to detect the above-mentioned output voltage of above-mentioned resonant mode converting unit.Frequency modulation unit is coupled to above-mentioned current detection circuit and above-mentioned voltage detecting circuit and above-mentioned control unit, and the said frequencies modulating unit is adjusted the minimum switching frequency of above-mentioned control unit according to above-mentioned output current and above-mentioned output voltage.
In the utility model one embodiment, wherein when above-mentioned output current during greater than an electric current preset value, the said frequencies modulating unit improves the minimum switching frequency of above-mentioned control unit; When above-mentioned output voltage during greater than a voltage preset value, the said frequencies modulating unit reduces the minimum switching frequency of above-mentioned control unit.
In the utility model one embodiment, the said frequencies modulating unit comprises one first resistance, one first modulating unit and one second modulating unit.First resistance is coupled between the frequency setting pin and an earth terminal of above-mentioned control unit; First modulating unit is coupled to the frequency setting pin of above-mentioned current detecting unit and above-mentioned control unit.Second modulating unit is coupled to the frequency setting pin of above-mentioned voltage detection unit and above-mentioned control unit.
In the utility model one embodiment, wherein first modulating unit comprises a PNP transistor, second resistance to the, six resistance, first and second nmos pass transistor and first and second electric capacity.The transistorized emitter-base bandgap grading of above-mentioned PNP is coupled to a voltage source, and second resistance is coupled between transistorized emitter-base bandgap grading of above-mentioned PNP and the transistorized base stage of above-mentioned PNP.One end of the 3rd resistance is coupled to the transistorized base stage of above-mentioned PNP; The drain electrode of above-mentioned first nmos pass transistor is coupled to the other end of above-mentioned the 3rd resistance, and the source electrode of above-mentioned first nmos pass transistor is coupled to earth terminal, and the grid of above-mentioned first nmos pass transistor is coupled to above-mentioned current detecting unit.First electric capacity is coupled between the grid and earth terminal of above-mentioned first nmos pass transistor; The 4th resistance is coupled between the grid and earth terminal of an above-mentioned NMOS.One end of above-mentioned the 5th resistance is coupled to the frequency setting pin of above-mentioned control unit, and the drain electrode of above-mentioned second nmos pass transistor is coupled to the other end of above-mentioned the 5th resistance.The source electrode of second nmos pass transistor is coupled to earth terminal, and its grid is coupled to the transistorized collection utmost point of an above-mentioned PNP.Second electric capacity is coupled between the grid and earth terminal of above-mentioned second nmos pass transistor.The 6th resistance is coupled between the grid and earth terminal of above-mentioned second nmos pass transistor.
In the utility model one embodiment, above-mentioned second modulating unit comprises a NPN transistor, second resistance to the, four resistance, one first nmos pass transistor and one first electric capacity.The collection utmost point of above-mentioned NPN transistor is coupled to a voltage source, and the base stage of above-mentioned NPN transistor is coupled to above-mentioned voltage detection unit.One second resistance is coupled between the base stage of the collection utmost point of above-mentioned NPN transistor and above-mentioned NPN transistor, and an end of above-mentioned the 3rd resistance is coupled to the frequency setting pin of above-mentioned control unit.The drain electrode of above-mentioned first nmos pass transistor is coupled to the other end of above-mentioned the 3rd resistance, and the source electrode of above-mentioned first nmos pass transistor is coupled to earth terminal, and the grid of above-mentioned first nmos pass transistor is coupled to the emitter-base bandgap grading of above-mentioned NPN transistor.First electric capacity is coupled between the grid and earth terminal of above-mentioned first nmos pass transistor.The 4th resistance is coupled between the grid and earth terminal of above-mentioned first nmos pass transistor.
In another embodiment of the utility model, the said frequencies modulating unit can be implemented by another kind of circuit framework, and it comprises one first resistance, a ground capacity, one first modulating unit and one second modulating unit.One first end of above-mentioned first resistance is coupled to a frequency setting pin of above-mentioned control unit, and a ground capacity is coupled between one second end and earth terminal of above-mentioned first resistance.First modulating unit is coupled to the frequency setting pin of above-mentioned current detecting unit and control unit, and second modulating unit is coupled to the frequency setting pin of above-mentioned voltage detection unit and control unit.
In the utility model one embodiment, above-mentioned first modulating unit comprises a PNP transistor, second resistance to the, ten resistance, first to second nmos pass transistor, first to second electric capacity, a NPN transistor.The transistorized emitter-base bandgap grading of above-mentioned PNP is coupled to a voltage source, and second resistance is coupled between transistorized emitter-base bandgap grading of an above-mentioned PNP and the transistorized base stage of above-mentioned PNP.One end of above-mentioned the 3rd resistance is coupled to the transistorized base stage of above-mentioned PNP, the drain electrode of above-mentioned first nmos pass transistor is coupled to the other end of above-mentioned the 3rd resistance, the source electrode of above-mentioned first nmos pass transistor is coupled to earth terminal, and the grid of above-mentioned first nmos pass transistor is coupled to above-mentioned current detecting unit.First electric capacity is coupled between the grid and earth terminal of above-mentioned first nmos pass transistor, and the 4th resistance is coupled between the grid and earth terminal of an above-mentioned NMOS.One end of above-mentioned the 5th resistance is coupled to the frequency setting pin of above-mentioned control unit, the drain electrode of above-mentioned second nmos pass transistor is coupled to the other end of above-mentioned the 5th resistance, the source electrode of above-mentioned second nmos pass transistor is coupled to above-mentioned second end of above-mentioned first resistance, and the grid of above-mentioned second nmos pass transistor is coupled to the transistorized collection utmost point of above-mentioned PNP.One first end of above-mentioned the 6th resistance is coupled to the transistorized collection utmost point of above-mentioned PNP; The 7th resistance is coupled between one second end and earth terminal of above-mentioned the 6th resistance.The base stage of above-mentioned NPN transistor is coupled to above-mentioned second end of above-mentioned the 6th resistance, and the emitter-base bandgap grading of above-mentioned NPN transistor is coupled to earth terminal.The 8th resistance is coupled between the collection utmost point of transistorized emitter-base bandgap grading of above-mentioned PNP and above-mentioned NPN transistor.The 9th resistance is coupled between the collection utmost point and earth terminal of above-mentioned NPN transistor.Second electric capacity is coupled between the collection utmost point and earth terminal of above-mentioned NPN transistor.The drain electrode that one end of above-mentioned the tenth resistance is coupled to the transistorized collection utmost point of above-mentioned PNP and above-mentioned the 3rd nmos pass transistor is coupled to the other end of above-mentioned the tenth resistance, the source electrode of above-mentioned the 3rd nmos pass transistor is coupled to earth terminal, and the grid of above-mentioned the 3rd nmos pass transistor is coupled to the collection utmost point of above-mentioned NPN transistor.
In the utility model one embodiment, above-mentioned second modulating unit comprises first and second NPN transistor, second to the 8th resistance, first to second nmos pass transistor and one second electric capacity.The collection utmost point of above-mentioned first NPN transistor is coupled to a voltage source, and its base stage is coupled to above-mentioned voltage detection unit.Second resistance is coupled between the collection utmost point and its base stage of first NPN transistor.One end of above-mentioned the 3rd resistance is coupled to the frequency setting pin of above-mentioned control unit, the drain electrode of above-mentioned first nmos pass transistor is coupled to the other end of the 3rd resistance, the source electrode of first nmos pass transistor is coupled to earth terminal, and its grid is coupled to the emitter-base bandgap grading of first NPN transistor.First end of above-mentioned the 4th resistance is coupled to the emitter-base bandgap grading of this first NPN transistor, and the 5th resistance is coupled between one second end and earth terminal of above-mentioned the 4th resistance.The base stage of above-mentioned second NPN transistor is coupled to second end of the 4th resistance, and the emitter-base bandgap grading of second NPN transistor is coupled to earth terminal.The 6th resistance is coupled between the collection utmost point of the collection utmost point of first NPN transistor and second NPN transistor.The 7th resistance is coupled between the collection utmost point and earth terminal of second NPN transistor, and second electric capacity is coupled between the collection utmost point and earth terminal of second NPN transistor.One end of the 8th resistance is coupled to the collection utmost point of first NPN transistor, and the drain electrode of second nmos pass transistor is coupled to the other end of the 8th resistance, and the source electrode of second nmos pass transistor is coupled to earth terminal, and its grid is coupled to the collection utmost point of second NPN transistor.
In the utility model one embodiment, above-mentioned current detecting unit comprises a resistance and a testing circuit.Above-mentioned resistance series connection is coupled to the output of above-mentioned resonant mode converting unit, and above-mentioned testing circuit is coupled to the two ends of above-mentioned resistance to detect the above-mentioned output current of above-mentioned resonant mode converting unit.
In the utility model one embodiment, above-mentioned voltage detection unit comprises first and second resistance and three-terminal element.One first end of above-mentioned first resistance is coupled to the output of above-mentioned resonant mode converting unit, and second resistance is coupled between one second end and an earth terminal of above-mentioned first resistance.One first end of above-mentioned three-terminal element is coupled to the said frequencies modulating unit, and one second end of above-mentioned three-terminal element is coupled to earth terminal, and a reference edge of above-mentioned three-terminal element is coupled to above-mentioned second end of above-mentioned first resistance.
In the utility model one embodiment, above-mentioned resonant mode converting unit is a LLC resonant mode transducer.
Among the utility model one embodiment, above-mentioned control unit is more exported one second switching signal to above-mentioned resonant mode converting unit, the work period of above-mentioned first switching signal is essentially 50%, the above-mentioned second switching signal work period is essentially 50%, and the waveform of above-mentioned first switching signal and above-mentioned second switching signal is anti-phase.
The utility model proposes a kind of resonant mode power conversion circuit in addition, comprises a resonant mode converting unit, a control unit, a current detecting unit and a frequency modulation unit.Control unit is coupled to above-mentioned resonant mode converting unit, extremely above-mentioned resonant mode converting unit is to adjust an output voltage of above-mentioned resonant mode converting unit in order to export at least one first switching signal, and wherein above-mentioned control unit has a minimum switching frequency to limit the frequency of above-mentioned first switching signal.Current detecting unit is coupled to the output of above-mentioned resonant mode converting unit to detect an output current of above-mentioned resonant mode converting unit, frequency modulation unit is coupled to above-mentioned current detection circuit and above-mentioned control unit, and the said frequencies modulating unit is adjusted the above-mentioned minimum switching frequency of above-mentioned control unit according to above-mentioned output current.Wherein, when above-mentioned output current during greater than an electric current preset value, the said frequencies modulating unit improves the minimum switching frequency of above-mentioned control unit.Wherein, the circuit framework of above-mentioned each element please refer to above stated specification, does not add tired stating at this.
The utility model proposes a kind of resonant mode power conversion circuit again, comprises a resonant mode converting unit, a control unit, a voltage detection unit and a frequency modulation unit.Control unit is coupled to above-mentioned resonant mode converting unit, extremely above-mentioned resonant mode converting unit is to adjust an output voltage of above-mentioned resonant mode converting unit in order to export one first switching signal, and wherein above-mentioned control unit has a minimum switching frequency to limit the frequency of above-mentioned first switching signal.Voltage detection unit is coupled to the output of above-mentioned resonant mode converting unit to detect an output voltage of above-mentioned resonant mode converting unit, frequency modulation unit is coupled to above-mentioned current detection circuit and above-mentioned voltage detecting circuit and above-mentioned control unit, and the said frequencies modulating unit is adjusted the minimum switching frequency of above-mentioned control unit according to above-mentioned output current and above-mentioned output voltage.Wherein, when above-mentioned output voltage during greater than a voltage preset value, the said frequencies modulating unit reduces the minimum switching frequency of above-mentioned control unit.
Comprehensively above-mentioned, the frequency of operation interval of switching signal can be adjusted according to the variation of the gain curve of transducer in good time for the minimum switching frequency that resonant mode power conversion circuit of the present utility model can be adjusted controller according to the output voltage or the output current of transducer.By this, resonant mode power conversion circuit of the present utility model can make the resonant mode converting unit obtain required gain to increase its output voltage and the effect of promoting its overvoltage protection.
For above-mentioned feature and advantage of the present utility model can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the functional block diagram according to the resonant mode power conversion circuit of the utility model first embodiment.
Fig. 2 A is according to the load of the utility model first embodiment and gain curve figure.
Fig. 2 B is the gain curve figure according to the utility model second embodiment.
Fig. 3 is the circuit diagram according to the resonant mode power conversion circuit of the utility model second embodiment.
Fig. 4 is the circuit diagram according to the converting unit of the utility model the 3rd embodiment.
Fig. 5 is the functional block diagram according to the resonant mode power conversion circuit that is applicable to current detecting of the utility model the 4th embodiment.
Fig. 6 is the functional block diagram according to the resonant mode power conversion circuit that is applicable to voltage detecting of the utility model the 4th embodiment.
[main element symbol description]
100,300,400,500,600: the resonant mode power conversion circuit
110,310: the resonant mode converting unit
120,320: control unit
130,330: current detecting unit
140,340: voltage detection unit
150,350,450: frequency modulation unit
152,352,452: the first modulating units
154,354,454: the second modulating units
332: testing circuit
B
11, B
31: the PNP transistor
B
21, B
32, B
41, B
42: NPN transistor
M
11, M
12, M
21: nmos pass transistor
M
31, M
32, M
33, M
41, M
42: nmos pass transistor
R
01, R
28, R
29, R
s: resistance
R
12～R
16, R
22～R
24, R
30～R
39, R
42～R
48: resistance
C
11～C
12, C
21, C
31, C
32, C
42: electric capacity
C
01: ground capacity
IC
2: three-terminal element
Fmin, Vref: frequency setting pin
RT/CT: pin
VG1: first control signal
VG2: second control signal
FS1: first switching signal
FS2: second switching signal
F1, F2, F3: frequency
V
CC: voltage source
VOUT: output voltage
GND: earth terminal
Embodiment
(first embodiment)
The voltage gain curve of resonant mode electric power converter (resonant power converter) can change and change along with load or output voltage, and for example when load improved, the operating frequency of its highest-gain can improve.Because the switching signal frequency exported of traditional controller can be subject to its internal oscillator frequency, and the set point of its internal oscillator frequency is normally fixing, can't adjust the modulation range of its output frequency along with the output of resonant mode electric power converter.Therefore, under some particular case, the resonant mode electric power converter can be subject to the operating frequency interval of switching signal and can't obtain maximum gain.For example, when the resonant mode electric power converter operated in heavy duty or peak load (peak load), the frequency of its maximum gain point can improve.Therefore, the resonant mode power conversion circuit of present embodiment can be adjusted the minimum switching frequency of its controller according to the variation of its gain curve, allows the resonant mode electric power converter can obtain higher gain to improve its output voltage.In addition, when feedback (system's generation problem) out of control, output voltage can rise, and this moment, output voltage need be increased to overvoltage protection point ability trigger protection voltage with the powered-down supply.Therefore, when detecting the voltage rising, the reduction that the minimum switching frequency of controller can be corresponding allows the resonant mode electric power converter have enough gains and improves output voltage with the trigger protection circuit to improve the gain of resonant mode electric power converter.
The controller of present embodiment can obtain present load state or feedback conditions according to the output voltage and the output current of resonant mode transducer, adjust the minimum switching frequency of controller then according to this, the resonant mode electric power converter allow controller have the frequency of modulating switching signal between bigger frequency switch area, so that may operate in the maximum gain point with the compliance with system demand.Because in the present embodiment, the minimum switching frequency of controller can be according to the output voltage and the electric current adjustment of transducer, no matter therefore system operates in peak load (peak load) or feeds back under the superpotential situation out of control, the resonant mode power conversion circuit of present embodiment all is operable in suitable Frequency point to obtain required voltage gain.
Please refer to Fig. 1, Fig. 1 is the functional block diagram according to the resonant mode power conversion circuit of the utility model first embodiment, and resonant mode power conversion circuit 100 comprises resonant mode converting unit 110, control unit 120, current detecting unit 130, voltage detection unit 140 and frequency modulation unit 150.Control unit 120 is coupled to resonant mode converting unit 110, and frequency modulation circuit 150 is coupled to control unit 120 and current detecting unit 130 and voltage detection unit 140.Current detecting unit 130, voltage detection unit 140 are coupled to the output of resonant mode converting unit 110 to detect the output voltage and the output current of resonant mode converting unit 110.
Resonant mode converting unit 110 for example is serial-resonant electric power converter (being called for short SRC) or parallel resonance formula electric power converter (being called for short PRC) or series parallel resonance formula electric power converter (be called for short SPRC, be called LCC again), and present embodiment is not limited.Be the example explanation with semibridge system LCC resonant mode electric power converter in the present embodiment, resonant mode converting unit 110 has the power switch (not illustrating) of two series connection, the similar squarer of its effect.Power switch in the resonant mode converting unit 110 can switch (conducting with close) according to the switching signal that control unit 120 is exported respectively to produce square-wave signal, then via resonant circuit and transformer generation output voltage VO UT.In operating process, the gain of resonant mode converting unit 110 and the frequency dependence of switching signal.With the resonance converter of semibridge system, control unit 120 can output two anti-phase and have in fact the switching signal of 50% work period (duty cycle) and control its switch.As shown in Figure 1, the switching signal that control unit 120 is exported comprises the first switching signal FS1 and the second switching signal FS2, in order to control the switch (for example being power transistor) in the resonant mode converting unit 110 respectively.Control unit 120 can be adjusted the gain of resonant mode converting unit 110 via the frequency of adjusting the first switching signal FS1 and the second switching signal FS2, and then adjusts the output voltage VO UT of resonant mode converting unit 110.
In addition, the circuit framework of resonant mode converting unit 110 also can be the circuit framework of full-bridge type, and control unit 120 can be exported four switching signals with the power switch in the control resonant mode converting unit 110 like this.Do not limit the circuit framework of resonant mode converting unit 110 in the present embodiment, control unit 120 can all change signal to resonant mode converting unit 110 at least according to its circuit framework output, and can adjust the gain of resonant mode converting unit 110 to produce required output voltage via the frequency of adjusting switching signal.
The function of control unit 120 similarly is a signal generator, can utilize for example (STMicroelectronics of STMicw Electronics, ST) the high voltage resonant control chip of company (for example model L6599) is realized, but present embodiment is not limited to the chip of this model.Generally speaking, the frequency of the switching signal that control unit is exported can be subject to the frequency of oscillation of chip internal, and its switching signal can have the restriction of a minimum switching frequency.With above-mentioned L6599 is example, and its minimum switching frequency is to set via a frequency setting pin, that is to say, can set the lowest operating frequency of the first switching signal FS1 and the second switching signal FS2 through setting pin thus.Owing to the gain meeting of resonant mode converting unit 110 switching frequency along with the first switching signal FS1 and the second switching signal FS2 becomes, the minimum switching frequency of therefore adjusting control unit 120 can allow resonant mode converting unit 110 have bigger gain modulation space to meet design requirement.It should be noted that the minimum switching frequency of so-called adjustment is meant the lower-frequency limit of adjusting 120 switching signals that can export of control unit, but not directly adjust the frequency of its switching signal.
Current detecting unit 130 and voltage detection unit 140 are used for detecting the output current and the output voltage of resonant mode converting unit 110 respectively.Frequency modulation unit 150 can be according to the output current of resonant mode converting unit 110 and the minimum switching frequency of output voltage adjustment control unit 120.Realize that with L6599 control unit 120 is an example, frequency modulation unit 150 can be adjusted the minimum switching frequency of control unit 120 via the resistance value that its Fmin pin of adjustment is connected.It should be noted that different control chips has different frequency setting modes, above-mentioned L6599 only is an embodiment of the present utility model, and the utility model is not as limit.After the explanation via the foregoing description, the present technique field has knows that usually the knowledgeable should know other execution modes by inference, does not add tired stating at this.
Comprise first modulating unit 152 and second modulating unit 154 in the frequency modulation unit 150, be respectively coupled to current detecting unit 130 and voltage detection unit 140.First modulating unit 152 can be adjusted the minimum switching frequency of control unit 120 according to the output current of resonant mode converting unit 110.Second modulating unit 154 can be adjusted the minimum switching frequency of control unit 120 according to the output voltage of resonant mode converting unit 110.For instance, when the output current that detects resonant mode converting unit 110 during greater than an electric current preset value, represent that it operates under the heavy duty, frequency modulation unit 150 can improve the minimum switching frequency of control units 120; When the output voltage that detects resonant mode converting unit 110 then may feed back during greater than a voltage preset value out of controlly, this moment, frequency modulation unit 150 can reduce the minimum switching frequency of control units 120.By above-mentioned adjustment, control unit 120 can or feed back the minimum switching frequency of adjusting switching signal when out of control at peak load, allows resonant mode converting unit 110 can obtain higher gain to export required magnitude of voltage.
Please refer to Fig. 2 A, Fig. 2 A is according to the load of the utility model first embodiment and gain curve figure.Present embodiment is the example explanation with the power supply unit of 280W, the gain curve when two gain curves that Fig. 2 A illustrates are respectively 280W load and 600W peak load.In the curve of 280W load, the frequency of its maximum gain is F1, and in the curve of 600W peak load, the frequency of its maximum gain is F2.By Fig. 2 A as can be known, when peak load or heavy duty, frequency corresponding to maximum gain point can improve, therefore when the output current that detects resonant mode converting unit 110 during greater than the electric current preset value, first modulating unit 152 just can improve the minimum switching frequency of the minimum switching frequency of control unit 120 with the restriction switching signal, improve the gain of resonant mode converting unit 110 by this, allow resonant mode converting unit 110 can keep stable output.With Fig. 2 A is example, and first modulating unit 152 can improve the minimum switching frequency of control unit 120 to the minimum switching frequency of frequency F2 with restriction control unit 120.Shown in Fig. 2 A, original minimum switching frequency is set in frequency F1, when the 600W peak load takes place, the pairing gain of frequency F1 (27kHz) is 0.83, when first modulating unit 152 is increased to frequency F2 (40kHz) with the minimum switching frequency of control unit 120, then can makes and be increased to 0.99.
Unusual problem takes place in so-called feedback expression power supply unit out of control, and for example element burns or fault, must allow this moment the output voltage of resonant mode converting unit 110 can be increased to the overvoltage protection point and come the powered-down supply to trigger overvoltage protection mechanism.Therefore; when voltage detection unit 140 detects output voltage above the voltage preset value; second frequency modulation circuit 154 just can reduce the minimum switching frequency of control unit 120, allows resonant mode converting unit 110 can obtain higher gain and triggers overvoltage protection with the powered-down supply to improve its output voltage.Please refer to Fig. 2 B, Fig. 2 B is the gain curve figure according to the utility model second embodiment.When the minimum switching frequency of original start is limited to frequency F1 (27kHz); voltage gain can only reach 1.07; when second frequency modulation circuit 154 is reduced to frequency F3 (20kHz) with the minimum switching frequency of control unit 120; its voltage gain can reach 1.11, can guarantee that the output voltage of resonant mode converting unit 110 can reach the overvoltage protection point.
From the above, resonant mode power conversion circuit 100 can or feed back the output gain of adjusting resonant mode converting unit 110 when out of control at peak load, allows resonant mode converting unit 110 may operate in higher gain point to export required magnitude of voltage.Above-mentioned in order to judge whether that peak load takes place or to feed back predetermined current value out of control and the predeterminated voltage value can be decided according to design requirement that the utility model is not limited.After the explanation via the foregoing description, the present technique field has knows that usually the knowledgeable should know other execution modes by inference, does not add tired stating at this.
(second embodiment)
Next, further specify the circuit execution mode of resonant mode power conversion circuit, please refer to Fig. 3, Fig. 3 is the circuit diagram according to the resonant mode power conversion circuit of the utility model second embodiment.Resonant mode power conversion circuit 300 comprises resonant mode converting unit 310, control unit 320, current detecting unit 330, voltage detection unit 340 and frequency modulation unit 350, still comprises first modulating unit 352 and second modulating unit 354 in the frequency modulation unit 350.Comprise resistance R in the current detecting unit 330
sWith testing circuit 332, resistance R
sCoupled in series is in the output of resonant mode converting unit 310, and in order to be voltage signal with current conversion, testing circuit 332 is coupled to resistance R
sTwo ends, detect the output current of resonant mode converting unit 310 via its voltage difference.Testing circuit 332 can utilize current measuring element or voltage detecting circuit to realize that present embodiment is not limited.Voltage detection unit 340 comprises resistance R
28With R
29And three-terminal element IC
2, resistance R
28With R
29Coupled in series between the output and earth terminal GND of resonant mode converting unit 310, three-terminal element IC
2Be coupled between second modulating unit 354 and the earth terminal GND three-terminal element IC
2Reference edge be coupled to resistance R
28With R
29Shared contact.
Wherein, three-terminal element IC
2For example be Texas Instrument (Texas Instruments, the TI) TL431 of being produced (voltage regulator), three-terminal element IC
2Reference edge (REF) be coupled to resistance R
28With R
29Shared contact, three-terminal element IC
2Anode tap (ANODE) be coupled to earth terminal GND, three-terminal element IC
2Cathode terminal (CATHODE) be coupled to NPN transistor B
21Base stage.Three-terminal element IC
2Can adjust the output voltage of cathode terminal according to the voltage of reference edge (REF).Application mode about TL431 please refer to its specifications, does not add tired stating at this.
First modulating unit 352 comprises resistance R
12～R
16, capacitor C
11～C
12, PNP transistor B
11With nmos pass transistor M
11, M
12Wherein the PNP transistor is the abbreviation of the bipolar junction transistor of PNP (PNPbipolar junction transistor), and nmos pass transistor is the abbreviation of N channel mos field-effect transistor (N channel metal-oxide-semiconductor field-effect transistor).PNP transistor B
11Emitter-base bandgap grading be coupled to voltage source V
CC, resistance R
12Be coupled to PNP transistor B
11Emitter-base bandgap grading and PNP transistor B
11Base stage between.Resistance R
13An end be coupled to PNP transistor B
11Base stage.Nmos pass transistor M
11Drain electrode be coupled to resistance R
13The other end.Nmos pass transistor M
11Source electrode be coupled to earth terminal GND.Nmos pass transistor M
11Grid be coupled to testing circuit 332 in the current detecting unit 330.
Capacitor C
11Be coupled to nmos pass transistor M
11Grid and earth terminal GND between, resistance R
14Be coupled to nmos pass transistor M
11Grid and earth terminal GND between.Resistance R
15An end be coupled to the frequency setting pin Fmin of control unit 320.Nmos pass transistor M
12Drain electrode be coupled to resistance R
15The other end, its source electrode is coupled to earth terminal GND, its grid is coupled to PNP transistor B
11The collection utmost point.Capacitor C
12Be coupled to nmos pass transistor M
12Grid and earth terminal GND between.Resistance R
16Be coupled to nmos pass transistor M
12Grid and earth terminal GND between.
Under normal condition, nmos pass transistor M
12Be to be in closing state, the output current that detects resonant mode converting unit 310 when testing circuit 332 is during greater than the electric current preset value (expression is in peak load or heavy duty), and testing circuit 332 can conducting nmos pass transistor M
11, this moment first, modulating unit 352 can produce the first control signal VG1 of high potential with conducting nmos pass transistor M
12, make resistance R
15With resistance R
01Parallel connection, the resistance value that allows frequency setting pin Fmin be connected reduces.By this, improve the minimum switching frequency of control unit 320, shown in Fig. 2 A.
Under normal operation, nmos pass transistor M
21Be the state that is in conducting, resistance R
23Can be considered and resistance R
01In parallel.The output voltage that detects harmonic conversion unit 310 when voltage detection unit 340 is during greater than the voltage preset value, and voltage detection unit 340 can be closed NPN transistor B
21, the second control signal VG2 that makes second modulating unit 354 be exported is converted to electronegative potential.At this moment, second modulating unit 354 can be closed nmos pass transistor M
21So that resistance R
23Not with resistance R
01Parallel connection (promptly is to allow resistance R
23Suspension joint).Therefore, the resistance value that the frequency setting pin Fmin of control unit 320 is coupled can improve, and makes the minimum switching frequency of control unit 320 descend.Shown in Fig. 2 B, lower minimum switching frequency can allow resonant mode converting unit 310 obtain higher gain.
(the 3rd embodiment)
Above-mentioned Fig. 3 only is an embodiment of the present utility model, wherein frequency modulation unit also can be implemented resonance control chip (resonant controller) to be applicable to different size with other circuit, in the present embodiment, the CM6901 chip produced with Champion-mirco of control unit 320 is the example explanation.Please refer to Fig. 4, Fig. 4 is the circuit diagram according to the resonant mode power conversion circuit 400 of the utility model the 3rd embodiment.The main difference of Fig. 4 and Fig. 3 is frequency modulation unit 450, and in Fig. 4, frequency modulation unit 450 comprises resistance R
01, ground capacity C
01, first modulating unit 452 and second modulating unit 454.Resistance R
01With ground capacity C
01Coupled in series between the frequency setting pin Vref and earth terminal GND of control unit 320, resistance R
01With ground capacity C
01Shared contact be coupled to another pin RT/CT of control unit 320.In more detail, the frequency setting pin of CM6901 be No. 16 pin (Pin number 16, Vref), so resistance R
01Can be coupled to chip No. 16 pin (Pin number 16, Vref) with No. 9 pin (Pin number 9, RT/CT) between, ground capacity C
01(Pin number 9 is RT/CT) and between the earth terminal GND to be coupled to No. 9 pin.Please refer to the component specification book of CM6901 about the circuit design mode of CM6901 chip, do not add tired stating at this.
First modulating unit 452 comprises resistance R
30～R
39, capacitor C
31, C
32, PNP transistor B
31With NPN transistor B
32With nmos pass transistor M
31, M
32, M
33PNP transistor B
31Emitter-base bandgap grading be coupled to voltage source V
CCResistance R
32Be coupled to PNP transistor B
31Emitter-base bandgap grading and its base stage between.Resistance R
33Be coupled to PNP transistor B
31Base stage and nmos pass transistor M
31Drain electrode between.Nmos pass transistor M
31Source electrode be coupled to earth terminal GND, its grid is coupled to current detecting unit 330.Capacitor C
31Be coupled to nmos pass transistor M
31Grid and earth terminal GND between, resistance R
34Be coupled to the grid M of NMOS
31And between the earth terminal GND.Resistance R
35Be coupled to the frequency setting pin Vref and the nmos pass transistor M of control unit 320
32Drain electrode between, nmos pass transistor M
32Source electrode be coupled to resistance R
01With ground capacity C
01Shared contact, nmos pass transistor M
32Grid then be coupled to PNP transistor B
31The collection utmost point.
Resistance R
36Be coupled to PNP transistor B
31The collection utmost point and resistance R
37Between, resistance R
37The other end be coupled to earth terminal GND.NPN transistor B
32Base stage be coupled to resistance R
36With resistance R
37Shared contact, NPN transistor B
32Emitter-base bandgap grading be coupled to earth terminal GND.Resistance R
38With resistance R
39Coupled in series is in PNP transistor B
31The collection utmost point and earth terminal GND between, its shared contact then is coupled to NPN transistor B
32The collection utmost point.Capacitor C
32Be coupled to NPN transistor B
32The collection utmost point and earth terminal GND between.Resistance R
30An end be coupled to PNP transistor B
31The collection utmost point, the other end is coupled to nmos pass transistor M
33Drain electrode, nmos pass transistor M
33Source electrode be coupled to earth terminal GND, nmos pass transistor M
33Grid be coupled to NPN transistor B
32The collection utmost point.
As Fig. 3, under normal condition, nmos pass transistor M
32Be to be in closing state, the output current that detects resonant mode converting unit 310 when testing circuit 332 is during greater than the electric current preset value (expression is in peak load or heavy duty), and testing circuit 332 can conducting nmos pass transistor M
31, this moment first, modulating unit 452 can produce the first control signal VG1 of high potential with conducting nmos pass transistor M
32, make resistance R
35With resistance R
01In parallel.The resistance value that frequency setting pin Vref is connected can be because resistance R
35With resistance R
01In parallel and reduce.By this, improve the minimum switching frequency of control unit 320, allow resonant mode converting unit 310 can produce higher gain, shown in Fig. 2 A.
Second modulating unit 454 comprises resistance R
42～R
48, capacitor C
42, NPN transistor B
41, B
42With nmos pass transistor M
41, M
42NPN transistor B
41The collection utmost point be coupled to voltage source V
CC, its base stage is coupled to voltage detection unit 340.Resistance R
42Be coupled to NPN transistor B
41The collection utmost point and base stage between.Resistance R
43Be coupled to the frequency setting pin Vref and the nmos pass transistor M of control unit 320
41Drain electrode between.Nmos pass transistor M
41Source electrode be coupled to earth terminal GND, its grid is coupled to NPN transistor B
41Emitter-base bandgap grading.Resistance R
44With resistance R
45Coupled in series is in NPN transistor B
41Emitter-base bandgap grading and earth terminal GND between, its shared contact is coupled to NPN transistor B
42Base stage, NPN transistor B
42Emitter-base bandgap grading be coupled to earth terminal GND.Resistance R
46Be coupled to NPN transistor B
41The collection utmost point and NPN transistor B
42The collection utmost point between.Resistance R
47Be coupled to NPN transistor B
42The collection utmost point and earth terminal GND between.Capacitor C
42Be coupled to NPN transistor B
42The collection utmost point and earth terminal GND between.Resistance R
48An end be coupled to NPN transistor B
41Emitter-base bandgap grading, the other end is coupled to nmos pass transistor M
42Drain electrode.Nmos pass transistor M
42Source electrode be coupled to earth terminal GND, nmos pass transistor M
42Grid be coupled to NPN transistor B
42The collection utmost point.
Under normal operation, nmos pass transistor M
41Be the state that is in conducting, resistance R
43Can be considered and resistance R
01In parallel.The output voltage that detects harmonic conversion unit 310 when voltage detection unit 340 is during greater than the voltage preset value, and voltage detection unit 340 can be closed NPN transistor B
41, the second control signal VG2 that makes second modulating unit 454 be exported is converted to electronegative potential.At this moment, second modulating unit 454 can be closed nmos pass transistor M
41, make resistance R
43Not with resistance R
01In parallel.At this moment, the resistance value that the frequency setting pin Vref of control unit 320 is coupled can improve, and makes the minimum switching frequency of control unit 320 descend.Shown in Fig. 2 B, lower minimum switching frequency can allow resonant mode converting unit 310 obtain higher gain.
Remaining circuit framework among Fig. 4 is similar to Fig. 3, and its circuit theory is also similar, so the present technique field has and knows that usually the knowledgeable making flowing mode via knowing its circuit easily by inference behind the foregoing description open, does not add tired stating at this.In addition, though Fig. 3 and Fig. 4 are to be the example explanation with different chips, the circuit framework of its frequency modulation unit 350,450 can be adjusted or transposing is used according to the chip specification, and the utility model is not limited.After the explanation via the foregoing description, the present technique field has knows that usually the knowledgeable should know other enforcements and application mode by inference, does not add tired stating at this.In addition, it should be noted that above-mentioned Fig. 3 and Fig. 4 only for enforcement example of the present utility model, but enforcement circuit of the present utility model is as limit, each element among above-mentioned Fig. 1 can be implemented with different circuit according to its function.After the explanation via the foregoing description, the present technique field has knows that usually the knowledgeable should know other execution modes by inference, does not add tired stating at this.
(the 4th embodiment)
In above-mentioned Fig. 1, the adjustment of its minimum switching frequency can be divided into according to the output current adjustment or according to output voltage adjusts dual mode, the partial circuit of wherein being responsible for adjusting according to output current minimum switching frequency is first modulating unit 152 and current detecting unit 130, and the partial circuit of being responsible for adjusting according to output voltage minimum switching frequency is second modulating unit 154 and voltage detection unit 140.Because first modulating unit 152 and second modulating unit 154 all have the function of the minimum switching frequency of adjustment control unit 120, so voltage detecting and the two-part circuit of current detecting can independently operate or be incorporated in the same resonant mode power conversion circuit.
As Fig. 5 and shown in Figure 6, Fig. 5 is the functional block diagram according to the resonant mode power conversion circuit that is applicable to current detecting of the utility model the 4th embodiment.Fig. 6 is the functional block diagram according to the resonant mode power conversion circuit that is applicable to voltage detecting of the utility model the 4th embodiment.In Fig. 5, resonant mode power conversion circuit 500 comprises resonant mode converting unit 110, control unit 120, current detecting unit 130 and first modulating unit 152.Wherein, the frequency modulation unit in Fig. 5 embodiment only comprises first modulating unit 152.Control unit 120 is coupled to resonant mode converting unit 110, the first modulating units 152 and is coupled to control unit 120 and current detecting unit 130.Current detecting unit 130 is coupled to the output of resonant mode converting unit 110 to detect the output current of resonant mode converting unit 110.When the output current that detects resonant mode converting unit 110 during greater than the electric current preset value, first modulating unit 152 can improve the minimum switching frequency of control units 120 to allow resonant mode converting unit 110 have higher gain.The start of the individual elements among Fig. 5 and its mode of operation can be with reference to the explanations of Fig. 1, and its circuit execution mode please refer to the description of above-mentioned Fig. 3 and Fig. 4, do not add tired stating at this.
In Fig. 6, resonant mode power conversion circuit 600 comprises resonant mode converting unit 110, control unit 120, current detecting unit 130 and second modulating unit 154.Wherein, the frequency modulation unit in Fig. 6 embodiment only comprises second modulating unit 154.Second modulating unit 154 is coupled to control unit 120 and voltage detection unit 140.When the output voltage that detects resonant mode converting unit 110 during greater than the voltage preset value, second modulating unit 154 can reduce the minimum switching frequency of control units 120 to allow resonant mode converting unit 110 have higher gain.The start of the individual elements among Fig. 6 and its mode of operation can be with reference to the explanations of Fig. 1, and its circuit execution mode please refer to the description of above-mentioned Fig. 3 and Fig. 4, do not add tired stating at this.
It should be noted that control unit 120 can use different chips or circuit to implement, different chips has different frequencies with circuit and adjusts mode, and the utility model is not limited to the execution mode of above-mentioned Fig. 1～Fig. 6.The main function of first modulating unit 152 and second modulating unit 154 is the minimum switching frequency that is used for adjusting control unit 120, and its circuit can become according to different control unit 120.After the explanation via the foregoing description, the present technique field has knows that usually the knowledgeable should know other execution modes by inference, does not add tired stating at this.
In sum, resonant mode power conversion circuit of the present utility model has the function of dynamically adjusting the minimum switching frequency of control unit according to the output current or the output voltage of resonant mode converting unit.Resonant mode power conversion circuit of the present utility model can change the instant minimum switching frequency of adjusting controller in response to the gain curve of transducer under different loads, allows the resonant mode converting unit can obtain preferable gain with the compliance with system demand.Improve the stability and the overvoltage protection effect of power supply unit by this.
Though preferred embodiment of the present utility model is open as above; right the utility model is not limited to the foregoing description; those skilled in the art; in not breaking away from scope disclosed in the utility model; when can doing a little change and adjustment, therefore protection range of the present utility model should with appended claims the person of being defined be as the criterion.
Claims (12)
1. a resonant mode power conversion circuit is characterized in that, this resonant mode power conversion circuit comprises:
One resonant mode converting unit;
One control unit, be coupled to this resonant mode converting unit, in order to export at least one first switching signal to this resonant mode converting unit to adjust an output voltage of this resonant mode converting unit, wherein this control unit has a minimum switching frequency to limit the frequency of this first switching signal;
One current detecting unit, the output that is coupled to this resonant mode converting unit is to detect an output current of this resonant mode converting unit;
One voltage detection unit, the output that is coupled to this resonant mode converting unit is to detect this output voltage of this resonant mode converting unit; And
One frequency modulation unit is coupled to this current detection circuit and this voltage detecting circuit and this control unit, and this frequency modulation unit is adjusted this minimum switching frequency of this control unit according to this output current and this output voltage.
2. resonant mode power conversion circuit as claimed in claim 1 is characterized in that, this frequency modulation unit comprises:
One first resistance is coupled between the frequency setting pin and an earth terminal of this control unit;
One first modulating unit is coupled to this frequency setting pin of this current detecting unit and this control unit; And
One second modulating unit is coupled to this frequency setting pin of this voltage detection unit and this control unit.
3. resonant mode power conversion circuit as claimed in claim 2 is characterized in that, this first modulating unit comprises:
One PNP transistor, the transistorized emitter-base bandgap grading of this PNP is coupled to a voltage source;
One second resistance is coupled between transistorized emitter-base bandgap grading of this PNP and the transistorized base stage of this PNP;
One the 3rd resistance, an end of the 3rd resistance is coupled to the transistorized base stage of this PNP;
One first nmos pass transistor, the drain electrode of this first nmos pass transistor is coupled to the other end of the 3rd resistance, and the source electrode of this first nmos pass transistor is coupled to this earth terminal, and the grid of this first nmos pass transistor is coupled to this current detecting unit;
One first electric capacity is coupled between the grid and this earth terminal of this first nmos pass transistor;
One the 4th resistance is coupled between the grid and this earth terminal of a NMOS;
One the 5th resistance, an end of the 5th resistance are coupled to this frequency setting pin of this control unit;
One second nmos pass transistor, the drain electrode of this second nmos pass transistor is coupled to the other end of the 5th resistance, and the source electrode of this second nmos pass transistor is coupled to this earth terminal, and the grid of this second nmos pass transistor is coupled to the transistorized collection utmost point of a PNP;
One second electric capacity is coupled between the grid and this earth terminal of this second nmos pass transistor; And
One the 6th resistance is coupled between the grid and this earth terminal of this second nmos pass transistor.
4. resonant mode power conversion circuit as claimed in claim 2 is characterized in that, this second modulating unit comprises:
One NPN transistor, the collection utmost point of this NPN transistor is coupled to a voltage source, and the base stage of this NPN transistor is coupled to this voltage detection unit;
One second resistance is coupled between the base stage of the collection utmost point of this NPN transistor and this NPN transistor;
One the 3rd resistance, an end of the 3rd resistance are coupled to this frequency setting pin of this control unit;
One first nmos pass transistor, the drain electrode of this first nmos pass transistor is coupled to the other end of the 3rd resistance, and the source electrode of this first nmos pass transistor is coupled to this earth terminal, and the grid of this first nmos pass transistor is coupled to the emitter-base bandgap grading of this NPN transistor;
One first electric capacity is coupled between the grid and this earth terminal of this first nmos pass transistor; And
One the 4th resistance is coupled between the grid and this earth terminal of this first nmos pass transistor.
5. resonant mode power conversion circuit as claimed in claim 1 is characterized in that, this frequency modulation unit comprises:
One first resistance, one first end of this first resistance is coupled to a frequency setting pin of this control unit;
One ground capacity is coupled between one second end and an earth terminal of this first resistance;
One first modulating unit is coupled to this frequency setting pin of this current detecting unit and this control unit; And
One second modulating unit is coupled to this frequency setting pin of this voltage detection unit and this control unit.
6. resonant mode power conversion circuit as claimed in claim 5 is characterized in that, this first modulating unit comprises:
One PNP transistor, the transistorized emitter-base bandgap grading of this PNP is coupled to a voltage source;
One second resistance is coupled between transistorized emitter-base bandgap grading of this PNP and the transistorized base stage of this PNP;
One the 3rd resistance, an end of the 3rd resistance is coupled to the transistorized base stage of this PNP;
One first nmos pass transistor, the drain electrode of this first nmos pass transistor is coupled to the other end of the 3rd resistance, and the source electrode of this first nmos pass transistor is coupled to this earth terminal, and the grid of this first nmos pass transistor is coupled to this current detecting unit;
One first electric capacity is coupled between the grid and this earth terminal of this first nmos pass transistor;
One the 4th resistance is coupled between the grid and this earth terminal of a NMOS;
One the 5th resistance, an end of the 5th resistance are coupled to this frequency setting pin of this control unit;
One second nmos pass transistor, the drain electrode of this second nmos pass transistor is coupled to the other end of the 5th resistance, the source electrode of this second nmos pass transistor is coupled to this second end of this first resistance, and the grid of this second nmos pass transistor is coupled to the transistorized collection utmost point of this PNP;
One the 6th resistance, one first end of the 6th resistance is coupled to the transistorized collection utmost point of this PNP;
One the 7th resistance is coupled between one second end and this earth terminal of the 6th resistance;
One NPN transistor, the base stage of this NPN transistor are coupled to this second end of the 6th resistance, and the emitter-base bandgap grading of this NPN transistor is coupled to this earth terminal;
One the 8th resistance is coupled between the collection utmost point of the transistorized emitter-base bandgap grading of this PNP and this NPN transistor;
One the 9th resistance is coupled between the collection utmost point and this earth terminal of this NPN transistor;
One second electric capacity is coupled between the collection utmost point and this earth terminal of this NPN transistor;
1 the tenth resistance, an end of the tenth resistance are coupled to the transistorized collection utmost point of this PNP; And
One the 3rd nmos pass transistor, the drain electrode of the 3rd nmos pass transistor is coupled to the other end of the tenth resistance, and the source electrode of the 3rd nmos pass transistor is coupled to this earth terminal, and the grid of the 3rd nmos pass transistor is coupled to the collection utmost point of this NPN transistor.
7. resonant mode power conversion circuit as claimed in claim 5 is characterized in that, this second modulating unit comprises:
One first NPN transistor, the collection utmost point of this first NPN transistor is coupled to a voltage source, and the base stage of this first NPN transistor is coupled to this voltage detection unit;
One second resistance is coupled between the base stage of the collection utmost point of this first NPN transistor and this first NPN transistor;
One the 3rd resistance, an end of the 3rd resistance are coupled to this frequency setting pin of this control unit;
One first nmos pass transistor, the drain electrode of this first nmos pass transistor is coupled to the other end of the 3rd resistance, and the source electrode of this first nmos pass transistor is coupled to this earth terminal, and the grid of this first nmos pass transistor is coupled to the emitter-base bandgap grading of this first NPN transistor;
One the 4th resistance, one first end of the 4th resistance is coupled to the emitter-base bandgap grading of this first NPN transistor;
One the 5th resistance is coupled between one second end and this earth terminal of the 4th resistance;
One second NPN transistor, the base stage of this second NPN transistor are coupled to this second end of the 4th resistance, and the emitter-base bandgap grading of this second NPN transistor is coupled to this earth terminal;
One the 6th resistance is coupled between the collection utmost point of the collection utmost point of this first NPN transistor and this second NPN transistor;
One the 7th resistance is coupled between the collection utmost point and this earth terminal of this second NPN transistor;
One second electric capacity is coupled between the collection utmost point and this earth terminal of this second NPN transistor;
One the 8th resistance, an end of the 8th resistance is coupled to the emitter-base bandgap grading of this first NPN transistor; And
One second nmos pass transistor, the drain electrode of this second nmos pass transistor is coupled to the other end of the 8th resistance, and the source electrode of this second nmos pass transistor is coupled to this earth terminal, and the grid of this second nmos pass transistor is coupled to the collection utmost point of this second NPN transistor.
8. resonant mode power conversion circuit as claimed in claim 1 is characterized in that, this current detecting unit comprises:
One resistance, coupled in series is in the output of this resonant mode converting unit; And
One testing circuit, the two ends that are coupled to this resistance are to detect this output current of this resonant mode converting unit.
9. resonant mode power conversion circuit as claimed in claim 1 is characterized in that, this voltage detection unit comprises:
One first resistance, one first end of this first resistance is coupled to the output of this resonant mode converting unit;
One second resistance is coupled between one second end and an earth terminal of this first resistance; And
One three-terminal element, one first end of this three-terminal element is coupled to this frequency modulation unit, and one second end of this three-terminal element is coupled to this earth terminal, and a reference edge of this three-terminal element is coupled to this second end of this first resistance.
10. resonant mode power conversion circuit as claimed in claim 1 is characterized in that, this resonant mode converting unit is a LLC resonant mode transducer.
11. a resonant mode power conversion circuit is characterized in that, this resonant mode power conversion circuit comprises:
One resonant mode converting unit;
One control unit, be coupled to this resonant mode converting unit, in order to export at least one first switching signal to this resonant mode converting unit to adjust an output voltage of this resonant mode converting unit, wherein this control unit has a minimum switching frequency to limit the frequency of this first switching signal;
One current detecting unit, the output that is coupled to this resonant mode converting unit is to detect an output current of this resonant mode converting unit; And
One frequency modulation unit is coupled to this current detection circuit and this control unit, and this frequency modulation unit is adjusted this minimum switching frequency of this control unit according to this output current.
12. a resonant mode power conversion circuit is characterized in that, this resonant mode power conversion circuit comprises:
One resonant mode converting unit;
One control unit, be coupled to this resonant mode converting unit, in order to export one first switching signal to this resonant mode converting unit to adjust an output voltage of this resonant mode converting unit, wherein this control unit has a minimum switching frequency to limit the frequency of this first switching signal;
One voltage detection unit, the output that is coupled to this resonant mode converting unit is to detect an output voltage of this resonant mode converting unit; And
One frequency modulation unit is coupled to this current detection circuit and this voltage detecting circuit and this control unit, and this frequency modulation unit is adjusted this minimum switching frequency of this control unit according to this output current and this output voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202201500U CN201726316U (en) | 2010-06-09 | 2010-06-09 | Resonance type power conversion circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202201500U CN201726316U (en) | 2010-06-09 | 2010-06-09 | Resonance type power conversion circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201726316U true CN201726316U (en) | 2011-01-26 |
Family
ID=43494669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010202201500U Expired - Lifetime CN201726316U (en) | 2010-06-09 | 2010-06-09 | Resonance type power conversion circuit |
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| Country | Link |
|---|---|
| CN (1) | CN201726316U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102281002A (en) * | 2010-06-09 | 2011-12-14 | 旭丽电子(广州)有限公司 | Resonant-type electric switching circuit |
| CN107359799A (en) * | 2017-07-28 | 2017-11-17 | 西南交通大学 | A kind of control method and its device of LCC resonance DC DC converters |
-
2010
- 2010-06-09 CN CN2010202201500U patent/CN201726316U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102281002A (en) * | 2010-06-09 | 2011-12-14 | 旭丽电子(广州)有限公司 | Resonant-type electric switching circuit |
| CN107359799A (en) * | 2017-07-28 | 2017-11-17 | 西南交通大学 | A kind of control method and its device of LCC resonance DC DC converters |
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Address after: 510000 No. twenty-five West spectral Road, Guangzhou hi tech Industrial Development Zone, Guangdong Patentee after: Lite-On Electronic (Guangzhou) Co., Ltd. Patentee after: Lite-On Technology Corporation Address before: 510000 No. twenty-five West spectral Road, Guangzhou hi tech Industrial Development Zone, Guangdong Patentee before: Xuli Electronics (Guangzhou) Co., Ltd. Patentee before: Lite-On Technology Corporation |
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Effective date of registration: 20170310 Address after: Wujin, Changzhou province high tech Industrial Development Zone, 88 Yang Lake Road, No. Patentee after: Lite on Technology (Changzhou) Co., Ltd. Patentee after: Lite-On Electronic (Guangzhou) Co., Ltd. Patentee after: Lite-On Technology Corporation Address before: No. twenty-five West Road, Science City, Guangzhou high tech Industrial Development Zone, Guangdong, China Patentee before: Lite-On Electronic (Guangzhou) Co., Ltd. Patentee before: Lite-On Technology Corporation |
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