CN201689910U - LED lamp core for illumination and three types of LED chips - Google Patents
LED lamp core for illumination and three types of LED chips Download PDFInfo
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- CN201689910U CN201689910U CN2010201668633U CN201020166863U CN201689910U CN 201689910 U CN201689910 U CN 201689910U CN 2010201668633 U CN2010201668633 U CN 2010201668633U CN 201020166863 U CN201020166863 U CN 201020166863U CN 201689910 U CN201689910 U CN 201689910U
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- diffusion sheet
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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Abstract
The utility model provides an LED lamp core for illumination and three types of LED chips. The utility model adopts a heat-conducting core (6) with the structures of a conical column, a thread column or a tapered stud, is simple in processing and convenient in installation, and solves the problem of heat conduction in the existing standardized lamp core; a heat diffusion piece (2) is made of copper and aluminium, and the areas and thicknesses need to be large enough so as to achieve the effect of heat diffusion; a wafer (1) is welded and attached on the heat diffusion piece (2), with the main aim of reducing the heat conducting temperature difference between the wafer (1) and the heat diffusion piece (2), and the secondary aim of realizing insulation therebetween; and a high-voltage insulating layer (4) for safety is arranged between the heat diffusion piece (2) and a heat-conducting core (6), and heat flow density therein is diffused and reduced by the heat diffusion piece. The LED lamp core adopts a wafer positioning plate technique, and solves the problems of the butt-joint welding of the wafer (1) and the heat diffusion piece (2), expensive equipment and low production efficiency.
Description
Technical field
The utility model belongs to the LED lighting technical field, specially refers to the heat conduction technology in LED wick and the led chip.
Technical background
The LED heat dissipation problem is a big key technical problem of current LED illumination penetration and promotion.Because led chip needs heat radiation, makes that the LED illuminating lamp will be as existing incandescent lamp and fluorescent lamp etc., wick (bulb) is standardized parts, and convenient the installation, has increased one deck difficulty.Existing LED illuminating lamp, light fixture and wick are not also realized standardized component relatively independent and that be convenient to assemble, thereby are made that its cost is higher.
Analyze from simple thermal conduction study, the LED heat radiation is a normal temperature diabatic process just, and uncomplicated.But because thermal conduction study and ripe heat transfer technology knowledge, and do not have fully by personnel's cognition in the LED industry, thereby current LED heat dissipation technology and product be complicated, be in the junior stage with other the related rudimentary knowledge of conducting heat.
The diabatic process of (fin just) is a conduction process from the LED node to the cross-ventilation heat-transfer surface, because the LED chip area is little, density of heat flow rate is very high, and this conduction process is extremely important in the whole LED heat radiation.Reduce the thermal resistance of conduction process, the most effective simple again way adopts highly heat-conductive material exactly, such as copper and aluminium, and the conductive coefficient height, the cost of material is low, easily machine-shaping.But copper and aluminium are metallic conductor, and the LED ligthing paraphernalia as electrical equipment must satisfy the Electrical Safety requirement, must reach certain high insulating requirements between LED node and the fin (metal exposed part), and general proof voltage will reach the insulating requirements of kilovolt.Insulation and heat conduction are conflicting, and existing product usually is arranged on the LED wafer on the one ceramic insulation liner, utilizes ceramic proof voltage height, and conductive coefficient is not low yet, solves this problem.Though pottery is such as Al
2O
3The pottery conductive coefficient can reach 20W/mK, but than little ten times in aluminium, littler nearly 20 times than copper, the density of heat flow rate on the LED wafer is up to 10
6W/m
2Adopt the thick Al of 0.2mm
2O
3The insulation lining, only the heat conduction temperature difference on this insulation lining will reach 10 ℃, in addition the thick Al of 0.2mm
2O
3The processing cost of potsherd is not low yet.Now all adopt the not high crystal-bonding adhesive of thermal conductivity (being generally elargol) usually, fixed wafer, this causes the very high heat conduction temperature difference between wafer and insulation lining two interfaces again.
Summary of the invention
The purpose of this utility model is exactly at the conduction process in the LED heat radiation process.One, the heat conduction problem in the real wick standardization of solution; Two, the contradiction between heat conduction in the led chip and the insulation proposes technical scheme simple in structure, that cost is low.
The technical solution of the utility model: the LED wick mainly includes wafer, thermal diffusion sheet and heat conduction core and constitutes, and the heat that wafer produces passes to heat conduction core by thermal diffusion sheet, passes to fin by hot core again.Feature of the present utility model is: heat conduction core has been adopted with aluminium or copper; (being that heat conduction core is outwards conducted heat) transmission of heat by contact face of heat conduction core and fin has adopted circular cone rod structure or threaded stud structure or taper bolt structure; Wafer is that welding is attached on the thermal diffusion sheet; The area of thermal diffusion sheet is greater than five times chip area, and thickness is not less than 0.5mm, and adopts copper or aluminium or copper aluminum composite material; Be provided with high-voltage insulation layer between thermal diffusion sheet and the heat conduction core, the thickness of high-voltage insulation layer is greater than 0.1mm.
Heat conduction core adopts the circular cone rod structure, the conical bore that matches is also arranged on the fin, as long as very little pushing force, just can obtain being exaggerated the contact pressure between the conical bore face of the heat conduction core circular cone cylinder of several times and fin, thereby contact heat resistance reduces, conical bore and the easy machine-shaping of circular cone post, and quality of fit guarantees easily, cost is low, and it is also convenient to install.Because the surface area of screw thread cylinder is exaggerated, the transmission of heat by contact area just is exaggerated, contact heat resistance between heat conduction core and the fin just reduces, such as adopting 60 ° of common trigonodont screw threads, its surface area is the twice on the face of cylinder, adopt rotation mode that the LED wick is packed in the fin (light fixture), can not need instrument, easy to operate.The taper bolt structure then combines the advantage of circular cone rod structure and threaded stud structure: contact pressure is big, contact area is big, is convenient to install.Adopt heat conduction core of the present utility model, solved the heat conduction problem between LED wick and the fin, and be convenient to the assembling of LED wick, also just solved real LED wick standardization matter of utmost importance.
Thermal diffusion sheet in the utility model, though similar with the heat sink effect and the diabatic process of existing product, clear and definite first its important function of the utility model---thermal diffusion effect, and be referred to as thermal diffusion sheet.Because the LED chip area is little, as the wafer of 1 * 1mm size, even power consumption 1.2W, its heat density just reaches 10
6W/m
2, very high, thereby solve wafer and become matter of utmost importance with contact heat resistance problem between the thermal diffusion sheet, and electric insulation problem is between the two taken second place.Welding procedure, even adopt the minimum soldering of cost, the conductive coefficient of metallic tin also is more than the 60W/mK, than senior heat-conducting cream also more than high ten times, thereby wafer employing welding procedure, welding is attached on the thermal diffusion sheet, with the heat conduction temperature difference that effectively reduces between wafer and the thermal diffusion sheet.Thermal diffusion sheet as the thermal diffusion effect not only will adopt the high material of thermal conductivity, it is enough big that its area and thickness are also wanted, thereby thermal diffusion sheet adopts copper and aluminium, and require the thermal diffusion sheet area to want chip area more than 5 times, thickness is not less than 0.5mm, preferably select during design and be not less than 10 times chip area, if wafer is 1 * 1mm, 1W, thermal diffusion sheet thickness should reach more than the 1.0mm, its purpose and effect are exactly to make heat effectively diffusion in thermal diffusion sheet, reduce the density of heat flow rate between thermal diffusion sheet and the heat conduction core.For satisfying the Insulation Problems of Electrical Safety code requirement, just can solve by the high-voltage insulation layer between thermal diffusion sheet and the heat conduction core.
In the utility model, high-voltage insulation layer is defined as anti-direct voltage and reaches the above insulating barrier of 500V.
The front proposes the thickness of the high-voltage insulation layer between thermal diffusion sheet and the heat conduction core greater than 0.1mm, as adopting Al
2O
3Ceramic insulating layer, 0.1mm thick anti-direct voltage can reach 1 kilovolt, this be for allow insulating barrier between thermal diffusion sheet and the heat conduction core bear to determine most of or all safety fixed insulating requirements, reduce the insulating requirements between wafer and the thermal diffusion sheet, or not consideration insulation between the two, to reduce heat transfer temperature difference between the two.
If adopt soldering between wafer and the thermal diffusion sheet, tin material between the two is thick to be 20 μ m, 10
6W/m
2Under the density of heat flow rate situation, heat transfer temperature difference calculates and can get Δ t=0.32 ℃ between both interfaces, through thermal diffusion sheet, is 1.25 * 10 if density of heat flow rate reduces by 8 times
5W/m
2, the high-voltage insulation layer between thermal diffusion sheet and the heat conduction core adopts the thick Al of 0.2mm
2O
3Pottery, conductive coefficient are 20W/mK, then calculate t=1.25 ℃ of heat transfer temperature difference Δ can getting the high-voltage insulation layer place, and the heat conduction temperature difference sum that is to say the interface, two places in the LED wick is in 2 ℃ of degree.If the Al that 0.2mm is thick
2O
3The ceramic insulation sheet is located at (a kind of existing product structure) between wafer and the thermal diffusion sheet (heat sink), only potsherd both sides heat transfer temperature difference calculates and can get Δ t=10 ℃, be above-mentioned 5 times more than, as seen adopt the utility model can significantly reduce the interior heat conduction temperature difference of LED wick.In the embodiment afterwards, will further set forth LED wick of the present utility model and be convenient to waterproof sealing, produce advantages such as standardization realization in enormous quantities.
At the led chip parts of being made up of wafer and thermal diffusion sheet, the utility model also from reducing thermal conduction resistance, reduces cost, and makes things convenient for manufacture view to set out, and has proposed concrete structure and manufacture method.
One, thermal diffusion sheet adopts aluminium or copper or copper aluminum composite material; The welding of wafer and thermal diffusion sheet is touched area greater than 1/3rd chip area; Thermal diffusion sheet is provided with high-voltage insulation layer, or the low-voltage insulation layer; High-voltage insulation layer adopts by anode oxidation method, the pellumina that direct metallic aluminium superficial growth from thermal diffusion sheet goes out, and the thickness of this film is greater than 50 μ m; The low-voltage insulation layer has adopted the ceramic insulating film that generates by vapour deposition or by the direct pellumina that goes out of the metallic aluminium superficial growth from the thermal diffusion sheet of anodic oxidation, this thickness is less than 50 μ m.
Two, the pn junction electrode of wafer is the V-type electrode, adopts inverted structure; Thermal diffusion sheet adopts copper or aluminium or copper aluminum composite material; Wafer is provided with thermal land; The weldering of wafer and thermal diffusion sheet knot contact area is greater than 1/3rd chip area; N junction electrode on the wafer and p junction electrode or the part p junction electrode outside are covered by the ceramic insulating film that vapour deposition generates by one deck, and thermal land is located at the outside of this ceramic insulating film.
Three, the wafer orientation sheet that has adopted the insulation sheet material to make in the led chip, welding of wafer orientation sheet or bonding being attached on the thermal diffusion sheet, wafer is embedded in the wafer orientation embedding mouth in the spacer, and the wafer welding is attached on the thermal diffusion sheet.
Four, a kind of led chip encapsulation making method is characterized in that: adopted the wafer orientation plate, had several polycrystalline sheet location embedding mouths and be no less than two location holes on the wafer orientation sheet; Corresponding pad and location hole are arranged on the thermal diffusion sheet plate; Wafer fixedly is embedded in the wafer orientation embedding mouth earlier, is attached to together on the thermal diffusion sheet plate again, heats the welding sequence that carries out wafer and thermal diffusion sheet more together; Or the wafer orientation plate is attached to earlier on the thermal diffusion sheet plate, wafer embedded in the wafer orientation embedding mouth again, and the welding sequence of wafer and thermal diffusion sheet is carried out in heating together again.
Description of drawings
The utility model is described in further detail below in conjunction with the drawings and specific embodiments.
Fig. 1 is a kind of feature profile schematic diagram that assembles gelled the utility model LED wick, and heat conduction core is the circular cone rod structure, shows the matching relationship of wick and fin.
Fig. 2 is a kind of feature profile schematic diagram of LED wick of the present utility model, and heat conduction core is a threaded stud structure.
Fig. 3 is a kind of feature profile schematic diagram of LED wick of the present utility model, and heat conduction core is the taper bolt structure, and is furnished with lampshade, shows to draw conductor structure and water-tight measure feature.
Fig. 4 is a kind of feature profile schematic diagram that assembles gelled the utility model LED wick, shows wick and adopts spring contact and contact structure with being connected of electricity between the light fixture (fin).
Fig. 5 and Fig. 6 are the wafer distribution schematic diagram on the LED wick, and expression wafer or wafer set are the layout of radially scattering, and as far as possible evenly disperse.
Fig. 7 is a kind of feature profile schematic diagram of great power LED wick of the present utility model, and the middle part connects, and is provided with radiated rib.
Fig. 8 and Fig. 9 are respectively two kinds of led chip feature profile schematic diagrames of the present utility model, and the pn junction electrode is a L type electrode, is particularly suitable for the wafer of silicon carbide substrates.
Figure 10 is a kind of led chip feature profile schematic diagram of the present utility model, and the pn junction electrode is the V-type electrode, and is inverted structure, and thermal land and p utmost point pad are one, are specially adapted to the wafer of Sapphire Substrate.
Figure 11 is a kind of wafer feature schematic diagram of chip shown in Figure 10, shows p, n junction electrode and pad thereof, ceramic insulating film, thermal land, n utmost point pad is shown on four angles.
Figure 12 is the ceramic insulating film among Figure 11 and the schematic diagram of thermal land.
Figure 13 is a kind of led chip feature profile schematic diagram of the present utility model.
Figure 14 is the feature schematic diagram of the wafer in a kind of chip shown in Figure 13, shows p, n junction electrode and pad thereof, ceramic insulating film, thermal land.
Figure 15 is the ceramic insulating film among Figure 14 and the schematic diagram of thermal land.
Figure 16 and Figure 17 are a kind of employing wafer orientation plates of the present utility model of expression, guarantee the feature schematic diagram of wafer and thermal diffusion sheet contraposition welding, and Figure 17 is the feature profile schematic diagram of Figure 16.
Figure 18 is a kind of employing wafer orientation plate of the present utility model of expression, guarantees the feature schematic diagram of wafer and thermal diffusion sheet contraposition welding.
Figure 19,20 is respectively two kinds of led chip feature profile schematic diagrames that adopted the wafer orientation sheet of the present utility model, and L type pn junction electrode is applicable to the wafer of silicon carbide substrates.
Figure 21,22,23 is respectively three kinds of led chip feature profile schematic diagrames that adopted the wafer orientation sheet of the present utility model, V-type pn junction electrode electrode, inverted structure.
Figure 24 is the wafer feature schematic diagram in a kind of chip shown in Figure 23.
Among the figure: 1, wafer, 2, thermal diffusion sheet, 3, fin, 4, high-voltage insulation layer, 5, screw, 6, heat conduction core, 7, radiated rib, 8, the low-voltage insulation layer, 9, draw lead, 10, sealing, 11, pcb board, 12, lampshade, 13, the contact, 14, spring contact, 15, substrate, 16, thermal land, 17, n utmost point pad, 18, n utmost point lead-in wire, 19, the contact conductor insulating barrier, 20, the p junction electrode, 21, ceramic insulating film, 22, the n junction electrode, 23, p utmost point pad, 24, p utmost point lead-in wire, 25, the wafer orientation plate, 26, location hole, 27, the thermal diffusion sheet plate, 28, the wafer orientation sheet, 29, lead, 30, scolder.
Embodiment
Fig. 1 illustrates: heat conduction core 6 adopts the circular cone rod structure, conical cylinder (being the outside heat-transfer area of heat conduction core) closely contacts with the tapered centre hole of fin 3, heat passes on the fin 3 from heat conduction core 6 by this contact-making surface, thereby the gap between the contact-making surface is as far as possible little, and promptly quality of fit wants high, contact pressure is big.The processing of circular cone post and conical bore is simple, and precision guarantees easily, as long as very little pushing force just can obtain amplifying tens of times contact pressure, employing screw 5 tightening forces are enclosed in heat conduction core 6 in the tapered centre hole of fin 3 tightly among the figure.For further reducing the contact heat resistance between heat conduction core and the fin, should in cylinder or hole, coat heat-conducting cream, such as silicone grease.
Though the conductive coefficient of aluminium is not as copper, the price of aluminium is low, and easier shaping such as adopting hot pressing to annotate technology, produced the aluminium heat conduction core, and the efficient high cost is low; Become original consideration again owing to the density of heat flow rate in heat conduction core is lowered, thereby from cost, heat conduction core preferably adopts aluminium.
Shown in Fig. 1, have only a slice thermal diffusion sheet 2, have several wafers 1 (welding) to be set on thermal diffusion sheet 2, thermal diffusion sheet 2 is attached to an end face of heat conduction core 6 by high-voltage insulation layer 4, this end face will be called as heat-absorbent surface, the relative other end, and that end that just is provided with screw 5 is called the heat conduction core rear end.That face of being close to the thermal diffusion sheet of heat conduction core heat-absorbent surface is called the B face of thermal diffusion sheet, and that face that wafer is set is called the A face of thermal diffusion sheet.
Adopt potsherd as high-voltage insulation layer, have following problem: one, the potsherd processing cost is not low, and is frangible; Two, have interface contact heat resistance problem between potsherd and thermal diffusion sheet and the heat conduction core, if adopt welding procedure, efficient is low, the cost height.If employing adhesion process, then contact heat resistance height.Adopt anode oxidation process, direct metallic aluminium on heat conduction core or thermal diffusion sheet grows pellumina, as high-voltage insulation layer, has then eliminated the contact heat resistance problem at interface between high-voltage insulation layer and thermal diffusion sheet or the heat conduction core.The anode oxidation process cost is low, and the efficient height is fit to mass production.Pellumina by anodic oxidation generates has hole, and hole is all unfavorable to heat conduction and insulation, should carry out sealing of hole and handle, and such as with insulating varnish or paraffin, preferably adopts the high materials such as silicone grease of conductive coefficient.Hard anodizing technology and differential arc oxidation (claiming micro-plasma oxidation or anode spark deposition again) technology, the pellumina of generation is more thickeied, and is applicable to the manufacturing high-voltage insulation layer more.
LED wick shown in Figure 2, heat conduction core 6 adopts threaded stud structure, equally also adopts monolithic thermal diffusion sheet structure, but wafer 1 concentrates setting (welding) in the center of thermal diffusion sheet 2, and be provided with low-voltage insulation layer 8 at the A of thermal diffusion sheet 2 face.This insulating barrier has been arranged; just can on the A of thermal diffusion sheet face, be provided with circuit and with corresponding pad of wafer and contact conductor; and those auxiliary elements (such as the antistatic protection element) just can be arranged on the thermal diffusion sheet with wafer together; encapsulation together; such structure integrated level height is convenient to the downstream and is produced.Because the density of heat flow rate height of wafer, thereby the thermal conduction resistance that reduces this insulating barrier is particularly important, dielectric strength is unimportant, needn't reach the Electrical Safety code requirement, as long as reach the peak of applied voltage, 220V civil power crest voltage can reach 380V, that is to say, it is just passable that this insulating barrier dielectric strength is up to 450V, and this is a low-voltage insulation, and then this insulating barrier is called the low-voltage insulation layer.
The ceramic membrane that adopts gas-phase deposition to generate is such as diamond, SiC, AlN, BN, BeO, Al
2O
3Deng ceramic membrane, densification, good insulating, thermal conductivity height, particularly diamond, SiC, AlN, BN, BeO are high thermal conduc tivity ceramics, not only can be used for the low-voltage insulation layer on the thermal diffusion sheet A face in the utility model, after being applicable to more with the ceramic insulating film on the wafer of setting forth.Gas-phase deposition includes physical vapor deposition (PVD) and chemical vapour deposition (CVD) (VCD), and these two kinds of technologies all can be used for making the low-voltage insulation layer in the utility model.
Though the ceramic membrane that gas-phase deposition generates is fine and close, thermal conductivity is high, can also generate the high thermal conduc tivity ceramics film, but the thin thickness of ceramic membrane (several microns), the cost height particularly will obtain the withstand voltage ceramic membrane (film thickness will reach more than the 10 μ m) of going up hectovolt, and cost is just higher.Alumilite process technology can be used for the manufacturing of the low-voltage insulation layer of thermal diffusion sheet A face in the utility model equally, though the height that the thermal conductivity of the pellumina that generates is made not as gas-phase deposition, but cost is low, obtains thicker film easily, and dielectric strength reaches more than the 100V.During design, the pellumina thickness of low-voltage insulation layer should be controlled the thermal conduction resistance at this place less than 50 μ m.
Though copper is more expensive than aluminium, more difficult machine-shaping, because the thermal diffusion sheet material usage is considerably less, profile is (sheet) simply, and is easy to manufacture, the more important thing is the density of heat flow rate height of wafer, then high conductivity material is more important, thereby thermal diffusion sheet should at first be selected copper for use.Want to generate anodised alumina insulating layer, just should adopt copper aluminum composite material, be covered with layer of aluminum on the copper coin surface on copper thermal diffusion sheet surface.Aluminum layer thickness on the thermal diffusion sheet A face will approach, and its thickness is as long as enough have in the required aluminium of anodic oxidation thick.
A kind of the utility model LED wick shown in Figure 3, heat conduction core 6 adopts the taper bolt structure, and is furnished with lampshade 12, draw lead 9 and pass heat conduction core 6, draw the syndeton of such electricity, not only compact conformation from the rear end of heat conduction core, be convenient to assembling, and realize the waterproof insulation sealing of wick high request easily.As shown in FIG.,, draw lead 9 and draw the place, be provided with sealing 10, realize that easily drawing lead 9 draws the place, waterproof insulation sealing reliably in the heat conduction core rear end.The waterproof insulation sealing of the front end of wick then can be handled by lampshade 12 and embedding fluid sealant and realize.Waterproof insulation is for outdoor electrical equipment, and is as street lamp, extremely important.Lampshade 12 not only plays the effect of wick waterproof insulation, also can be used as effects such as optic reflection, optically focused.
Every wafer is furnished with a thermal diffusion sheet among Fig. 3, promptly is many led chips structure, and high-voltage insulation layer 4 not only is provided with on the heat conduction core heat-absorbent surface, and also has on the B of thermal diffusion sheet face, thereby single LEDs chip has the High-Voltage Insulation characteristic.Such structure is particularly suitable for adopting anode oxidation process to generate alumina insulating layer, such as, realize that dielectric strength reaches 2 kilovolts of proof voltages, the thickness of pellumina will reach 200 μ m, adopt the single face growth, and difficulty is big, if be divided into the two sides, growth respectively, each 100 μ m is thick, and difficulty just reduces, and density is higher, and thermal conductivity is also better.Pcb board 11 is arranged shown in the figure, and led chip is inlaid in the pcb board 11, the auxiliary circuit of led chip just can be arranged on the pcb board 11, draw lead 9 also with pcb board 11 on circuit be welded to connect.
Wick among Fig. 3 is connected the employing lead type with outer power supply source, also can adopt terminals minor or contact or tactile disk formula, and binding post or contact (tactile disk) is arranged on the heat conduction core rear end, connects electric wire (drawing lead 9) and passes heat conduction core, promptly interior the plant in the heat conduction core.LED wick shown in Fig. 4 has just adopted the contact structure, and the contact 13 on the wick contacts with spring contact 14 on being fixed on fin 3, as existing bulb.
By adopting special-purpose Calculation of Heat Transfer software, calculate nine 1 * 1mm of simulation, the wafer of heating 1W, the conduction heat transfer process in a fin, draw: the junction temperature when nine wafers concentrate in together is wanted score to scatter and is put (when mutual spacing reaches 5mm), exceed nearly 5 ℃ more than.Also can analyze from heat transfer ABC and to draw, be to reduce thermal conduction resistance, the LED wafer on the thermal diffusion sheet or the led chip of wafer and thermal diffusion sheet composition on heat conduction core, dispersed placement as far as possible, the power of single wafer is as far as possible little, quantity is many as far as possible.Fig. 5 is 6 wafers dispersed placement figure on a thermal diffusion sheet.Fig. 6 illustrates, four LEDs chips dispersed placement on heat conduction core 6, the wafer set that has three wafers to constitute in every chips.In actual design is used, exist many wafers must be in groups together, inseparable situation is such as there being three wafers to separate in the three color base White-light LED chips.When design LED wick, the quantity of wafer or wafer set is many as far as possible, minimumly can not be less than three or three groups, but quantity can cause production cost to increase too much; The power of single wafer is as far as possible little, and maximum power should be greater than 4W, but single too little wafer power just means that number of wafers increases, and may cause cost to increase.Wafer among Fig. 5,6 or wafer set (chip) all are radially scatters, dispersed placement, and it is the most reasonable that such radial dispersion is arranged.
LED wick shown in Figure 7, heat conduction core 6 middle parts connect, and are provided with radiated rib 7, such structure is the design of great power LED wick, because wick power is big, wafer or number of chips are many, the dispersed placement of radially scattering again, thereby the heat conduction core external diameter is big especially, core is vacant, just is utilized to be provided with radiated rib 7, increases area of dissipation, not only reduced entire heat dissipation sheet volume, also helped and reduce the heat transmission aluminum.
Led chip among Fig. 3,4,7 is provided with high-voltage insulation layer 4 at the B of thermal diffusion sheet 2 face, if generate this high-voltage insulation layer by alumilite process, thermal diffusion sheet 2 just should adopt aluminium or copper aluminum composite material, preferably selects copper aluminum composite material for use.The wafer welding is attached on the thermal diffusion sheet, can effectively solve the high problem of the heat conduction temperature difference that high heat flux causes, but must guarantee to have enough welding contacts area.The utility model thinks that the welding contact area between wafer and the thermal diffusion sheet should be not less than 1/3rd chip area, and the area of same thermal diffusion sheet should be greater than the chip area of 5 times (preferably choosing is not less than 10 times), and thickness is not less than 0.5mm.
Led chip shown in Figure 8, pn junction electrode are L contact (Laterial-Contact, level contact), abbreviate L type electrode as, and the LED wafer of silicon carbide substrates is fit to adopt such electrode type.Because SiC can become conductor by doping, silicon carbide substrates just can be used as the n junction electrode, and substrate 15 outer surfaces are provided with thermal land 16, n utmost point pad just, this moment thermal land the area welding contact area between wafer 1 and the thermal diffusion sheet 2 just.The A face of the thermal diffusion sheet 2 among Fig. 8 is provided with low-voltage insulation layer 8, can make by vapour deposition or alumilite process, and the corresponding thermal land (n utmost point lead pad just) and n utmost point lead-in wire should be arranged on low-voltage insulation layer 8 surface.Led chip shown in Figure 9 and shown in Figure 8 similar, main difference be: among Fig. 9, thermal land on the substrate 15 16 directly and the metal solder on the thermal diffusion sheet 2 is provided with high-voltage insulation layer 4 at the B of thermal diffusion sheet 2 face, can make by alumilite process.
Led chip shown in Figure 10, pn junction electrode are V contact (Vertical-Contact, vertical contact), are called for short the V-type electrode, and adopt inverted structure, also claim flip chip structure, and the LED wafer of Sapphire Substrate is fit to adopt such electrode type.Shown in the figure, weld thermal land 16 metal surfaces direct and thermal diffusion sheet 2, and thermal land 16 is communicated with p junction electrode 20, and thermal land 16 is p utmost point pad just, and 20 of thermal land 16 and p junction electrodes have the ceramic insulating film 21 that generates by vapour deposition.Thermal diffusion sheet 2 is p utmost point lead-in wire just, and the p utmost point pin of chip can adopt directly and thermal diffusion sheet 2 welderings connect.Be provided with high-voltage insulation layer 4 at the B of thermal diffusion sheet 2 face, can generate by alumilite process.The A face of thermal diffusion sheet 2 is provided with n utmost point lead-in wire 18, and is separated with contact conductor insulating barrier 19, on the n utmost point lead-in wire 18 pad is arranged, and directly welds with n utmost point pad 17 on the wafer 1.Welding contact area between wafer 1 and the thermal diffusion sheet 2 includes the area of thermal land 16 and the area of n utmost point pad, if the area of thermal land 16 is enough big, the thermal conduction resistance problem of contact conductor insulating barrier 19 is just inessential.From Figure 11,12 as can be seen, n junction electrode 22 and part p junction electrode 20 are covered by ceramic insulating film 21, thermal land 16 is in the outside of this ceramic insulating film 21, the purpose that adopts such ceramic insulation membrane structure is the area that increases thermal land as far as possible, i.e. welding contact area between wafer and the thermal diffusion sheet.
Led chip shown in Figure 13 and shown in Figure 10 similar, V-type electrode, inverted structure, difference has: n junction electrode 22 and p junction electrode 20 (except that pad) are all covered by ceramic insulating film 21, and thermal land 16 separates with p utmost point pad 23, separate with two electrode insulations, referring to Figure 14 and Figure 15.The A face of thermal diffusion sheet 2 also is provided with p utmost point lead-in wire 24, and is separated with contact conductor insulating barrier 19.
The LED wafer that 1 * 1mm is big just belongs to large-sized wafer, electrode pad and thermal land are set on so little area, shown in Figure 11,14, the size of electrode pad is general little to be 0.1mm to diameter, must the short circuit welding must not appear assurance again, thereby wafer and thermal diffusion sheet aligning accuracy requirement height.Generally all adopt eutectic welding, just need several seconds heating time, if adopt one one ground contraposition, add thermal weld again, equipment needed thereby not only requires height, costliness, and production efficiency is also very low.The high-power LED chip encapsulation, inefficiency, the cost height also is a big problem in the present LED industry.
The utility model proposes a kind of method that adopts the wafer orientation plate, solve above problem, shown in Figure 16,17, on a wafer orientation plate 25, have the many wafer orientation embedding mouths of number, wafer 1 is embedded in the wafer orientation embedding mouth, wafer orientation plate 25 also has location hole 26, has illustrated 6 location holes 26, and location hole is minimum during design must not be less than two.Adopt clicking technique processing location hole 26 and wafer orientation embedding mouth, precision height not only, equipment is simple, and efficient is also high.Have positioning hole corresponding on the thermal diffusion sheet plate 27, and with this location hole be benchmark be provided with wafer on corresponding bonding pad.The position of wafer is determined by the wafer orientation embedding mouth on the wafer orientation plate 25, wafer orientation plate 25 is determined by location hole 26 with 27 contrapositions of thermal diffusion sheet plate, thereby just can guarantee that the corresponding bonding pad contraposition is accurate on pad on each wafer and the thermal diffusion sheet plate, integral body adds thermal weld together again, once finish many wafer welding of number (having 55 among the figure), this method is the efficient height not only, and equipment is simple again.When adding thermal weld, need pressurization, make that wafer is stressed to be attached on the thermal diffusion sheet, guarantee welding quality.Because wafer is to be embedded in the wafer orientation embedding mouth, be not shifted when guaranteeing pressurization easily.This operation has two kinds: one, wafer 1 is inlayed earlier and is fixed in the wafer orientation plate 25, by location hole 26 location, is attached to together on the thermal diffusion sheet plate 27 again, heats together again, carries out the welding sequence of wafer and thermal diffusion sheet; Two, wafer fixing board 25, and by location hole 26 location, subsides earlier are fixed on the thermal diffusion sheet plate 27, wafer 1 are mounted in the wafer orientation embedding mouth again, heat together again, carry out the welding sequence of wafer and thermal diffusion sheet.After welding was finished, the wafer orientation plate can be removed, and also can keep, shown in Figure 19,20, the wafer orientation plate that slitting is stayed in the led chip just is called wafer orientation sheet 28, at this moment, the wafer orientation sheet should adopt insulating material, can adopt resistant to elevated temperatures polyester diaphragm.
Adopt above method, not only make wafer and the thermal diffusion sheet contraposition is accurate, welding efficiency is high, equipment is simple, and highly beneficial to later process efficiency raising, such as: after finishing the welding of wafer and thermal diffusion sheet, the big plate of opening cuts into a rule earlier, be that wafer becomes row to arrange with thermal diffusion sheet, the terminal pins of chip also is processed into corresponding with it arrangement, can a contraposition weld like this, can a contraposition pour into sealing again, cut into many led chip afterwards again.
Figure 18 illustrates, and adopts above the utility model technology, the method for producing the led chip of single thermal diffusion sheet polycrystalline sheet shown in Figure 5 of proposing.Big wafer orientation plate and the thermal diffusion plate of opening adopts clicking technique, processes the wafer orientation sheet and the thermal diffusion sheet that in a row link to each other, after operations such as contraposition welding and perfusion sealing are finished, cuts off the part that links to each other again, becomes single led chip.
Figure 19 shows a kind of led chip of carry wafer spacer, and wafer orientation sheet 28 is provided with contact conductor and pad (or circuit).Wafer among the figure adopts L type electrode, thermal land 16 is n utmost point pad just, n utmost point lead-in wire 18 passes wafer orientation sheet 28 and draws from above, is provided with p utmost point lead-in wire 24 above the wafer orientation sheet 28, and the p utmost point pad 23 on the wafer welds by lead 29 with pad on the p utmost point lead-in wire 24 and is communicated with.Led chip shown in Figure 20, electrode pad on the wafer (p utmost point pad 23) is against the edge (preferably being located on the angle) of wafer, pad on the contact conductor on the wafer orientation sheet 28 (p utmost point lead-in wire 24) nestles up corresponding bonding pad on the wafer (p utmost point pad 23), directly uses scolder 30 (such as tin) that the welding of two electrode pads is communicated with.
The led chip of carry wafer spacer shown in Figure 21, adopt the V-type electrode, inverted structure, the A face of thermal diffusion sheet 2 is provided with low-voltage insulation layer 8, the B face is provided with high-voltage insulation layer 4, low-voltage insulation layer 8 is provided with contact conductor (n utmost point lead-in wire 18, p utmost point lead-in wire is not shown), and thermal land (also being p utmost point lead pad).Led chip shown in Figure 22 and Figure 21 are similar, V-type electrode and inverted structure, visibly differently be: n utmost point pad 17 is arranged on the sidewall of wafer, the pad of the n utmost point lead-in wire 18 on the wafer orientation sheet 28 directly is communicated with the welding of two pads by scolder 30 near the pad on the wafer sidewall (n utmost point pad 17).
Led chip shown in Figure 23 and Figure 24, wafer is cut for four jiaos, is quadrant and lacks, and n utmost point pad 17 and p utmost point pad 23 on the wafer just are arranged in the sidewall of four unfilled corners, and the diagonal angle distributes; Ceramic insulating film 21 is with one whole covering of wafer, and thermal land 16 and two electrode insulations separate, and thermal diffusion sheet 2 is the simple metal plate, and thermal land on the wafer 16 directly and the metal solder of thermal diffusion sheet 2.Such structure helps increasing thermal land area (welding contact area), reduces the aligning accuracy requirement.
Figure 11,14,24 illustrates, and electrode pad all is arranged on the angle, also can be arranged on the edge near wafer certainly, but more help making full use of chip area on the angle, obtains more luminous zone.The Figure 14 and the n utmost point shown in Figure 24 and p utmost point pad and become the diagonal angle to distribute all on the angle, and wafer is a rectangle, and such structure helps preventing that two kinds of electrode pad contrapositions from makeing mistakes.
For improving light emission rate, should be provided with reflective membrane at wafer orientation sheet outer surface, with reflexing to the light on wafer orientation sheet surface, reflect away again.
Claims (10)
1. LED wick that is used to throw light on, include: heat conduction core (6), thermal diffusion sheet (2) and wafer (1) is characterized in that: heat conduction core (6) has adopted aluminium or copper; The transmission of heat by contact face that heat conduction core (6) is outwards conducted heat has adopted circular cone rod structure or threaded stud structure or taper bolt structure; Thermal diffusion sheet (2) has adopted copper or aluminium or copper aluminum composite material; The thickness of thermal diffusion sheet (2) is not less than 0.5mm, and area is greater than 5 times chip area; Wafer (1) is that welding is attached on the thermal diffusion sheet (2); Be provided with high-voltage insulation layer (4) between the heat-absorbent surface of thermal diffusion sheet (2) and heat conduction core (6), the thickness of high-voltage insulation layer (4) is less than 0.1mm.
2. LED wick according to claim 1 is characterized in that: high-voltage insulation layer (4) has adopted by anodic oxidation pellumina directly last from heat conduction core (6) or that thermal diffusion sheet (2) is gone up or the metallic aluminium superficial growth on both goes out.
3. LED wick according to claim 1 is characterized in that: wafer or wafer set are radially to scatter, dispersed placement, and the power of single wafer is not more than 4W.
4. LED wick according to claim 1 is characterized in that: draw lead (9) and pass in heat conduction core (6), stretch out in the heat conduction core rear end or be provided with power connection end or contact or tactile disk in the rear end of heat conduction core.
5. LED wick according to claim 1 is characterized in that: heat conduction core (6) middle part connects, and is provided with radiated rib (7).
6. a led chip includes wafer (1) and thermal diffusion sheet (2), and it is characterized in that: thermal diffusion sheet (2) has adopted copper or aluminium or copper aluminum composite material; The area of thermal diffusion sheet (2) is greater than 5 times chip area, and thickness is not in 0.5mm; Wafer (1) is provided with thermal land (16), and weldering is attached to the A face of thermal diffusion sheet (2), and the welding contact area between wafer (1) and the thermal diffusion sheet (2) is not less than 1/3rd chip area; A face and B face that the A face that the B face of thermal diffusion sheet is provided with high-voltage insulation layer (4) or thermal diffusion sheet is provided with low-voltage insulation layer (8) or thermal diffusion sheet are respectively arranged with low-voltage insulation layer (8) and high-voltage insulation layer (4); High-voltage insulation layer (4) has adopted by the direct pellumina that goes out of the metallic aluminium superficial growth from the thermal diffusion sheet of anodic oxidation, and the thickness of this pellumina is greater than 50 μ m; Low-voltage insulation layer (8) has adopted the ceramic insulating film that generates by vapour deposition or by the direct pellumina that goes out of the metallic aluminium superficial growth from the thermal diffusion sheet of anodic oxidation, the thickness of this pellumina is less than 50 μ m.
7. a led chip includes wafer (1) and thermal diffusion sheet (2), and the pn junction electrode is the V-type electrode, adopts inverted structure, and it is characterized in that: thermal diffusion sheet (2) has adopted copper or aluminium or copper aluminum composite material; The area of thermal diffusion sheet (2) is greater than 5 times chip area, and thickness is not less than 0.5mm; Wafer (1) is provided with thermal land (16), and the welding contact area between wafer (1) and the thermal diffusion sheet (2) is not less than 1/3rd of chip area; N junction electrode (22) on the wafer and p junction electrode (20) or the part p junction electrode outside are covered by the ceramic insulating film that vapour deposition generates by one deck, and thermal land (16) is in the outside of this ceramic insulating film.
8. led chip, include: thermal diffusion sheet (2), wafer (1) and wafer orientation sheet (28) is characterized in that: thermal diffusion sheet (2) has adopted copper or aluminium or copper aluminum composite material; The area of thermal diffusion sheet is greater than 5 times chip area, and thickness is not less than 0.5mm; The wafer orientation sheet adopts the insulation sheet material to make; Wafer orientation sheet (28) welding or the bonding A face that is attached to thermal diffusion sheet (2), wafer (1) is embedded in the wafer orientation sheet (28).
9. according to claim 7 or 8 described led chips, it is characterized in that: n utmost point pad on the wafer and p utmost point pad are located at respectively on four angles, and become the diagonal angle to distribute.
10. led chip according to claim 8, it is characterized in that: be provided with electrode pad at edge or sidewall by wafer (1), wafer orientation sheet (28) is provided with corresponding contact conductor, the contact conductor pad is near the electrode pad on the corresponding wafer, and two pads directly weld connection by lead or scolder.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102287686A (en) * | 2011-07-05 | 2011-12-21 | 秦彪 | Solid-state lighting lamp |
| WO2012079238A1 (en) * | 2010-12-16 | 2012-06-21 | Qin Biao | Light emitting diode (led) chip and led die and manufacturing method for chip |
| WO2012119338A1 (en) * | 2011-03-07 | 2012-09-13 | Qin Biao | Led optical module and led chip for illumination |
| CN103187509A (en) * | 2011-12-28 | 2013-07-03 | 华夏光股份有限公司 | Light emitting diode device |
| CN106206906A (en) * | 2015-02-25 | 2016-12-07 | 隆达电子股份有限公司 | Light emitting diode chip package |
| CN107552941A (en) * | 2016-06-07 | 2018-01-09 | 程国中 | A kind of welding method of heat carrier and conductive structure part |
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- 2010-03-21 CN CN2010201668633U patent/CN201689910U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012079238A1 (en) * | 2010-12-16 | 2012-06-21 | Qin Biao | Light emitting diode (led) chip and led die and manufacturing method for chip |
| WO2012119338A1 (en) * | 2011-03-07 | 2012-09-13 | Qin Biao | Led optical module and led chip for illumination |
| TWI454637B (en) * | 2011-03-07 | 2014-10-01 | ||
| CN102287686A (en) * | 2011-07-05 | 2011-12-21 | 秦彪 | Solid-state lighting lamp |
| CN103187509A (en) * | 2011-12-28 | 2013-07-03 | 华夏光股份有限公司 | Light emitting diode device |
| CN106206906A (en) * | 2015-02-25 | 2016-12-07 | 隆达电子股份有限公司 | Light emitting diode chip package |
| CN107552941A (en) * | 2016-06-07 | 2018-01-09 | 程国中 | A kind of welding method of heat carrier and conductive structure part |
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