CN201682473U - High-power IGBT intelligent drive module for electric automobile - Google Patents

High-power IGBT intelligent drive module for electric automobile Download PDF

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Publication number
CN201682473U
CN201682473U CN201020184721XU CN201020184721U CN201682473U CN 201682473 U CN201682473 U CN 201682473U CN 201020184721X U CN201020184721X U CN 201020184721XU CN 201020184721 U CN201020184721 U CN 201020184721U CN 201682473 U CN201682473 U CN 201682473U
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China
Prior art keywords
circuit
igbt
power
electric vehicle
power igbt
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Expired - Fee Related
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CN201020184721XU
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Chinese (zh)
Inventor
杨涛
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Yunnan Lingpao Science & Technology Co Ltd
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Yunnan Lingpao Science & Technology Co Ltd
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Priority to CN201020184721XU priority Critical patent/CN201682473U/en
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Abstract

The utility model relates to a high-power IGBT intelligent drive module for an electric automobile, which belongs to automobile electronic device products, and mainly solves the technique problem of drive control of an electric automobile motor. The utility model adopts the technical scheme that a DC/DC conversion circuit 1 is connected with two IGBT drive circuits 3 and 4 mainly, a level matching circuit 2 is connected with the DC/DC conversion circuit 1 and the two IGBT drive circuits of 3 and (4), and each leading-out circuit cable is connected into a pin header. The utility model can be used for power driving control of electric automobiles.

Description

Used for electric vehicle high-power IGBT intelligent driver module
Technical field:
The utility model relates to a kind of intelligent driver module, a kind of specifically used for electric vehicle high-power IGBT intelligent driver module.
Background technology:
Development along with the development, particularly power battery technology of power electronic technology and high-power IGBT module makes the research and development of electric automobile and industrialization become possibility.Because the exhaustion of petroleum resources and being on the rise of Global Greenhouse Effect, low-carbon economy have become inevitable.Electric automobile substitutes traditional fuel-engined vehicle has become trend.
The main distinction of electric automobile and traditional fuel-engined vehicle is the power drive part.The power drive of electric automobile mainly contains electrokinetic cell, motor drive controller, motor formation.The high-power IGBT intelligent driver module is one of core component of motor drive controller.Because domestic relevant research and development and industry are relatively backward, this product is all monopolized by external minority enterprise at present.Vehicle operation condition is special, reliability requirement is very high, ambient temperature and anti-vibration etc. are required all very harsh, the used for electric vehicle high-power IGBT intelligent driver module that satisfies above-mentioned requirements is subjected to external producing country government to sell embargo, can't buy at home, seriously restrict the reliability of China's electric powered motor driving governor.
Used for electric vehicle high-power IGBT intelligent driver module is used to drive electric automobile high-power IGBT module and turns on and off reliably.Extensively apply to higher big-power transducer of the motor-driven of various electric automobiles and various requirement etc.Through preliminary literature search, do not see the open report identical with the utility model.
Summary of the invention:
The purpose of this utility model is to overcome the deficiency of prior art, and a kind of perfect in shape and function is provided, and satisfies the high-power IGBT intelligent object that electric automobile uses.
Realize that circuit theory of the present utility model and structure are such: used for electric vehicle high-power IGBT intelligent driver module, by row's pin, the DC/DC translation circuit, level matching circuit, drive circuit constitutes.Connecting mode is that DC/DC translation circuit 1 connects with two IGBT drive circuits 3 and 4, and level matching circuit 2 is connecting DC/DC translation circuit 1 and two IGBT drive circuits 3 and 4, respectively draws circuitry lines and inserts row's pin.
Wherein, DC/DC translation circuit 1 is by two integrated package U 1, U 2,, a resistance R 1, 15 capacitor C 1, C 2, C 3, C 4, C 5, C 6, C 7, C 8, C 9, C 10, C 11, C 12, C 13, C 14, C 15, 11 diode V 1, V 2, V 3, V 4, V 5, V 6, V 7, V 8, V 9, V 10, V 11, a high frequency transformer T 1, and six earth points are coupled to each other formation.
Level matching circuit 2 is by six resistance R 2, R 3, R 4, R 5, R 6, R 7, two triode V 12, V 13, two triode V 14, V 15, and an earth point is coupled to each other formation.
IGBT drive circuit 3 is by an integrated package U 3, four resistance R 8, R 9, R 10, R 11, five capacitor C 16, C 17, C 18, C 19, C 20, four triode V 16, V 17, V 18, V 19, two diode V 20, V 21, and three earth points are coupled to each other formation.The IGBT drive circuit has two.
In each circuit, DC/DC translation circuit 1, level matching circuit 2, IGBT drive circuit 3 and 4 its connecting joints have VCC2A, VE2A, VEE2A; PWMA, VCC1, PWMB, PWM1, PWM2; SO1, DESATA, OUTA, and with row pin link.
The DC/DC translation circuit is used to two IGBT drive circuits that insulating power supply is provided; Level matching circuit is used for the level match of input signal and handles; Two IGBT drive circuits are used for the gate driving of IGBT module, and detect the operating state of IGBT in good time, have under-voltage protection and IGBT overcurrent protection function.
The beneficial effects of the utility model are: the DC/DC translation circuit has adopted the dc bus mode, and circuit structure is a half-bridge structure, and it is simple to have a circuit structure, the conversion efficiency advantages of higher.The IGBT drive circuit is a core with IGBT special intelligent chip for driving, possesses functions such as isolation drive and the overcurrent protection of IGBT module, under-voltage protection.The power drive of IGBT drive circuit is made of the good high-frequency high-power triode of many switching characteristics.In order to improve reliability of products, the device of selecting for use has all been taked Redundancy Design.The product reliability height, the against shock performance is good; Operating temperature range is wide, can reach-40 ℃ to+125 ℃; Adopt the dc bus mode, circuit structure is simple, and volume is little, the conversion efficiency height; Adopt the automotive grade special I GBT isolation drive chip of perfect in shape and function, the reliability height;
Description of drawings:
Fig. 1 is a circuit principle structure schematic diagram of the present utility model;
Fig. 2 is a utilization example Parameter Map of the present utility model.
Embodiment:
Below in conjunction with accompanying drawing of the present utility model, further embodiment is illustrated.
Embodiment: 2 * 3W used for electric vehicle high-power IGBT intelligent driver module.
Module is made of row pin and circuit, and circuit is by DC/DC translation circuit 1, the level matching circuit 2 that is connected with two IGBT drive circuits, constitute with two IGBT drive circuits 3 and 4 that DC/DC translation circuit 1 is connected with level matching circuit 2.Specified input voltage: direct current 15V; Rated output power: 2 * 3W, maximum output current: 16A, serviceability temperature is-40 ℃ to+125 ℃.
The circuit theory of module as shown in Figure 2.U 1Select IR2085S for use, U 2Select LM78L05 for use, U 3And U 4Select IGBT intelligent driver DRIC for use, V 3Select IRF7313 for use, V 4, V 5, V 7, V 9, V 20, V 21, V 24, V 26Select 1N4448 for use, V 18And V 23Select MJD44HH11 for use, V 19And V 25Select MJD45HH11 for use, T 1Select the EPC13 high frequency transformer for use.Other device is with reference to Fig. 2.
Use shows: the utility model driving power is big, the wide height of operating temperature range, and anti-shake performance is good, and defencive function is perfect.

Claims (5)

1. used for electric vehicle high-power IGBT intelligent driver module, by row's pin, the DC/DC translation circuit, level matching circuit, drive circuit constitutes, it is characterized in that: DC/DC translation circuit (1) connects with two IGBT drive circuits (3) and (4), and level matching circuit (2) is connecting DC/DC translation circuit (1) and two IGBT drive circuits (3) and (4), respectively draws circuitry lines and inserts row's pin.
2. used for electric vehicle high-power IGBT intelligent driver module according to claim 1 is characterized in that: DC/DC translation circuit (1) is by two integrated package U 1, U 2, a resistance R 1, 15 capacitor C 1, C 2, C 3, C 4, C 5, C 6, C 7, C 8, C 9, C 10, C 11, C 12, C 13, C 14, C 15, 11 diode V 1, V 2, V 3, V 4, V 5, V 6, V 7, V 8, V 9, V1 0, V 11, a high frequency transformer T 1, and six earth points are coupled to each other formation.
3. used for electric vehicle high-power IGBT intelligent driver module according to claim 1 is characterized in that: level matching circuit (2) is by six resistance R 2, R 3, R 4, R 5, R 6, R 7, two triode V 12, V 13, two triode V 14, V 15, and an earth point is coupled to each other formation.
4. used for electric vehicle high-power IGBT intelligent driver module according to claim 1 is characterized in that: IGBT drive circuit (3) is by an integrated package U 3, four resistance R 8, R 9, R 10, R 11, five capacitor C 16, C 17, C 18, C 19, C 20, four triode V 16, V 17, V 18, V 19, two diode V 20, V 21, and three earth points are coupled to each other formation.
5. according to claim 1 and 2 and 3 and 4 described used for electric vehicle high-power IGBT intelligent driver modules, it is characterized in that: DC/DC translation circuit (1), level matching circuit (2), IGBT drive circuit (3) and (4) its connecting joint have VCC2A, VE2A, VEE2A; PWMA, VCC1, PWMB, PWM1, PWM2; SO1, DESATA, OUTA, and with row pin link.
CN201020184721XU 2010-05-11 2010-05-11 High-power IGBT intelligent drive module for electric automobile Expired - Fee Related CN201682473U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201020184721XU CN201682473U (en) 2010-05-11 2010-05-11 High-power IGBT intelligent drive module for electric automobile

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201020184721XU CN201682473U (en) 2010-05-11 2010-05-11 High-power IGBT intelligent drive module for electric automobile

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CN201682473U true CN201682473U (en) 2010-12-22

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101877538A (en) * 2010-05-11 2010-11-03 云南领跑科技有限公司 Two-channel high-power IGBT (Insulated-Gate Bipolar Transistor) intelligent drive module for electric vehicle
CN103475190A (en) * 2013-09-03 2013-12-25 山东润峰电子科技有限公司 Efficient power supply control and drive circuit for electromobile motor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101877538A (en) * 2010-05-11 2010-11-03 云南领跑科技有限公司 Two-channel high-power IGBT (Insulated-Gate Bipolar Transistor) intelligent drive module for electric vehicle
CN103475190A (en) * 2013-09-03 2013-12-25 山东润峰电子科技有限公司 Efficient power supply control and drive circuit for electromobile motor
CN103475190B (en) * 2013-09-03 2015-12-02 深圳红河马智能数字动力技术有限公司 High efficiency motor in electric automobile Energy control and drive circuit

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C14 Grant of patent or utility model
GR01 Patent grant
DD01 Delivery of document by public notice

Addressee: Yunnan Lingpao Science & Technology Co., Ltd.

Document name: Notification to Pay the Fees

DD01 Delivery of document by public notice

Addressee: Yunnan Lingpao Science & Technology Co., Ltd.

Document name: Notification of Termination of Patent Right

C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20101222

Termination date: 20130511