CN204614785U - Power semiconductor modular - Google Patents
Power semiconductor modular Download PDFInfo
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- CN204614785U CN204614785U CN201520318030.7U CN201520318030U CN204614785U CN 204614785 U CN204614785 U CN 204614785U CN 201520318030 U CN201520318030 U CN 201520318030U CN 204614785 U CN204614785 U CN 204614785U
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Abstract
The utility model discloses a kind of power semiconductor modular, comprise three phase full bridge power circuit and half-bridge voltage change-over circuit, three phase full bridge power circuit and half-bridge voltage change-over circuit link together, wherein three phase full bridge power circuit is composed in parallel by 3 half-bridge power semiconductor modules or is made up of 1 six cell power semiconductor module, described half-bridge voltage change-over circuit comprises the IGBT unit of brachium pontis and the diode of lower brachium pontis, the negative pole of the emitter of IGBT unit and the diode of lower brachium pontis links together, the collector electrode of IGBT unit is connected high-tension battery with the positive pole of the diode of lower brachium pontis respectively by power electrode, the integrated level of power semiconductor modular can be improved, reduce volume, weight reduction, save cost.
Description
Technical field:
The utility model relates to a kind of power semiconductor modular, is mainly used in electric automobile, belongs to New-energy electric vehicle technical field.
Background technology:
Electric vehicle motor controller, as one of the core component of Development of Electric Vehicles, is related to the development of Science in Future in China new energy technology, is the important indicator weighing Electric Cars in China art research and development ability.
As shown in Figure 1, the drive part in current electric vehicle motor controller generally adopts the power semiconductor modular of three phase full bridge topological structure, and the power semiconductor modular that vehicle-mounted charge part uses is half-bridge topology substantially.When charging, the upper brachium pontis power chip of described half-bridge power semiconductor module is open-minded, and power supply is charged to battery by inductance; Have no progeny when upper brachium pontis power chip closes, the energy on inductance carries out afterflow by the diode chip for backlight unit of lower brachium pontis.Lower brachium pontis power chip in described half-bridge power semiconductor module recharges here inoperative in circuit.The lower brachium pontis power chip of described half-bridge power semiconductor module is in off state always, and namely remain on reliable negative pressure off state, this state adds driving power consumption, and too increases extra hardware circuit cost and locus.
Summary of the invention:
The purpose of this utility model is to provide a kind of power semiconductor modular, can improve the integrated level of power semiconductor modular, reduce volume, weight reduction, saving cost.
The purpose of this utility model is achieved by following technical proposals.
Power semiconductor modular, comprise three phase full bridge power circuit and half-bridge voltage change-over circuit, three phase full bridge power circuit and half-bridge voltage change-over circuit link together, wherein three phase full bridge power circuit is composed in parallel by 3 half-bridge power semiconductor modules or is made up of 1 six cell power semiconductor module, described half-bridge voltage change-over circuit comprises the IGBT unit of brachium pontis and the diode of lower brachium pontis, the negative pole of the emitter of IGBT unit and the diode of lower brachium pontis links together, the collector electrode of IGBT unit is connected high-tension battery with the positive pole of the diode of lower brachium pontis respectively by power electrode.
Three phase full bridge power circuit described above is by IGBT unit Q1, IGBT unit Q2, IGBT unit Q3, IGBT unit Q4, IGBT unit Q5 and IGBT unit Q6 forms three phase full bridge structure, half-bridge voltage change-over circuit comprises the IGBT unit Q7 of brachium pontis and the diode D of lower brachium pontis, the emitter of IGBT unit Q7 and the negative pole of diode D link together and draw power electrode X, the emitter of IGBT unit Q1 and the collector electrode of IGBT unit Q4 link together and draw power electrode U, the emitter of IGBT unit Q2 and the collector electrode of IGBT unit Q5 link together and draw power electrode V, the emitter of IGBT unit Q3 and the collector electrode of IGBT unit Q6 link together and draw power electrode W, IGBT unit Q1, IGBT unit Q2, the collector electrode of IGBT unit Q3 and IGBT unit Q7 links together and draws power electrode DC+, IGBT unit Q4, the emitter of IGBT unit Q5 and IGBT unit Q6 and the positive pole of diode D link together and draw power electrode DC-.
Described above draws control terminal G1, G2, G3, G4, G5, G6 and G7 respectively the base stage of each IGBT unit, and from the emitter of each IGBT unit, draw control terminal E1, E2, E3, E4, E5, E6 and E7 respectively, thus, from described power semiconductor modular, 6 power electrodes and 14 control terminals are drawn altogether.
Diode described above is fast recovery diode.
Diode described above is Ultrafast recovery diode.
Power semiconductor modular, comprise three phase full bridge power circuit and half-bridge voltage change-over circuit, three phase full bridge power circuit and half-bridge voltage change-over circuit link together, wherein three phase full bridge power circuit is composed in parallel by 3 half-bridge power semiconductor modules or is made up of 1 six cell power semiconductor module, described half-bridge voltage change-over circuit comprises the MOSFET unit of brachium pontis and the diode of lower brachium pontis, the negative pole of the source electrode of MOSFET unit and the diode of lower brachium pontis links together, the drain electrode of MOSFET unit is connected high-tension battery with the positive pole of the diode of lower brachium pontis respectively by power electrode.
Three phase full bridge power circuit described above is by MOSFET unit M1, MOSFET unit M2, MOSFET unit M3, MOSFET unit M4, MOSFET unit M5 and MOSFET unit M6 forms three phase full bridge structure, half-bridge voltage change-over circuit comprises the MOSFET unit M7 of brachium pontis and the diode D0 of lower brachium pontis, the source electrode of MOSFET unit M7 and the negative pole of diode D0 link together and draw power electrode X, the source electrode of MOSFET unit M1 and the drain electrode of MOSFET unit M4 link together and draw power electrode U0, the source electrode of MOSFET unit M2 and the drain electrode of MOSFET unit M5 link together and draw power electrode V0, the source electrode of MOSFET unit M3 and the drain electrode of MOSFET unit M6 link together and draw power electrode W0, MOSFET unit M1, MOSFET unit M2, the drain electrode of MOSFET unit M3 and MOSFET unit M7 links together and draws power electrode DC0+, MOSFET unit M4, the source electrode of MOSFET unit M5 and MOSFET unit M6 and the positive pole of diode D0 link together and draw power electrode DC0-.
Described above draws control terminal G10, G20, G30, G40, G50, G60 and G70 respectively from the grid of each MOSFET unit, and from the source electrode of each MOSFET unit, draw control terminal S1, S2, S3, S4, S5, S6 and S7 respectively, thus, from described power semiconductor modular, 6 power electrodes and 14 control terminals are drawn altogether.
Diode described above is fast recovery diode.
Diode described above is Ultrafast recovery diode.
The utility model compared with prior art, has following effect:
1) decrease IGBT unit or MOS cell quantity, reduce the encapsulation volume of module, alleviate the weight of module, reduce the cost of module, be conducive to integrated and miniaturized, the lightweight requirements of system simultaneously.
2) by after module integration, decrease the length between interconnection structure, decrease parasitic parameter simultaneously, the loss of module can be reduced, improve switching speed.
3) owing to decreasing the quantity of IGBT unit or MOS cell, the protective circuit that the drive circuit of described power semiconductor units and preventing is misleaded can be reduced.
Accompanying drawing illustrates:
Fig. 1 is the circuit diagram of existing electric machine controller for motor vehicle.
Fig. 2 is the circuit diagram of power semiconductor modular in embodiment 1.
Fig. 3 is the circuit diagram of half-bridge voltage change-over circuit in embodiment 1.
Fig. 4 is the circuit diagram of power semiconductor modular in embodiment 2.
Fig. 5 is the circuit diagram of half-bridge voltage change-over circuit in embodiment 2.
Embodiment:
Also by reference to the accompanying drawings the utility model is described in further detail below by specific embodiment.
Embodiment one: as Fig. 2, shown in Fig. 3, the present embodiment is a kind of power semiconductor modular, comprise three phase full bridge power circuit and half-bridge voltage change-over circuit, three phase full bridge power circuit and half-bridge voltage change-over circuit link together, wherein three phase full bridge power circuit is composed in parallel by 3 half-bridge power semiconductor modules or is made up of 1 six cell power semiconductor module, described half-bridge voltage change-over circuit comprises the IGBT unit Q7 of brachium pontis and the diode D of lower brachium pontis, the negative pole of the emitter of IGBT unit Q7 and the diode D of lower brachium pontis links together and draws power electrode X, the collector electrode of IGBT unit Q7 and the positive pole of the diode D of lower brachium pontis draw power electrode respectively outward for being connected DC+ and DC-of high-tension battery.
Wherein three phase full bridge power circuit forms three phase full bridge structure by IGBT unit Q1, IGBT unit Q2, IGBT unit Q3, IGBT unit Q4, IGBT unit Q5 and IGBT unit Q6, and each IGBT unit can be composed in parallel by multiple igbt chip.The emitter of IGBT unit Q1 and the collector electrode of IGBT unit Q4 link together and draw power electrode U, the emitter of IGBT unit Q2 and the collector electrode of IGBT unit Q5 link together and draw power electrode V, the emitter of IGBT unit Q3 and the collector electrode of IGBT unit Q6 link together and draw power electrode W, IGBT unit Q1, IGBT unit Q2, the collector electrode of IGBT unit Q3 and IGBT unit Q7 links together and draws power electrode DC+, IGBT unit Q4, the emitter of IGBT unit Q5 and IGBT unit Q6 and the positive pole of diode D link together and draw power electrode DC-.
The base stage of each IGBT unit, draw control terminal G1, G2, G3, G4, G5, G6 and G7 respectively, and draw control terminal E1, E2, E3, E4, E5, E6 and E7 respectively from the emitter of each IGBT unit.Thus, from described power semiconductor modular, 6 power electrodes and 14 control terminals are drawn altogether.
Described diode is fast recovery diode FRD or Ultrafast recovery diode SBD, and it is good that it has switching characteristic, the advantages such as reverse recovery time is short, forward current is large, volume is little, simple installation.
Embodiment two: as Fig. 4, shown in Fig. 5, the present embodiment is a kind of power semiconductor modular, comprise three phase full bridge power circuit and half-bridge voltage change-over circuit, three phase full bridge power circuit and half-bridge voltage change-over circuit link together, wherein three phase full bridge power circuit is composed in parallel by 3 half-bridge power semiconductor modules or is made up of 1 six cell power semiconductor module, described half-bridge voltage change-over circuit comprises the MOSFET unit M7 of brachium pontis and the diode D0 of lower brachium pontis, the negative pole of the source electrode of MOSFET unit M7 and the diode D0 of lower brachium pontis links together and draws power electrode X0, the drain electrode of MOSFET unit M7 and the positive pole of the diode D0 of lower brachium pontis draw power electrode respectively outward for being connected DC0+ and DC0-of high-tension battery.
Wherein three phase full bridge power circuit forms three phase full bridge structure by MOSFET unit M1, MOSFET unit M2, MOSFET unit M3, MOSFET unit M4, MOSFET unit M5 and MOSFET unit M6, and each MOSFET unit can be composed in parallel by multiple MOSFET chip.The source electrode of MOSFET unit M1 and the drain electrode of MOSFET unit M4 link together and draw power electrode U0, the source electrode of MOSFET unit M2 and the drain electrode of MOSFET unit M5 link together and draw power electrode V0, the source electrode of MOSFET unit M3 and the drain electrode of MOSFET unit M6 link together and draw power electrode W0, MOSFET unit M1, MOSFET unit M2, the drain electrode of MOSFET unit M3 and MOSFET unit M7 links together and draws power electrode DC0+, MOSFET unit M4, the source electrode of MOSFET unit M5 and MOSFET unit M6 and the positive pole of diode D0 link together and draw power electrode DC0-.
Control terminal G10, G20, G30, G40, G50, G60 and G70 is drawn respectively from the grid of each MOSFET unit, and from the source electrode of each MOSFET unit, draw control terminal S1, S2, S3, S4, S5, S6 and S7 respectively, thus, from described power semiconductor modular, 6 power electrodes and 14 control terminals are drawn altogether.
Described diode is fast recovery diode FRD or Ultrafast recovery diode SBD, and it is good that it has switching characteristic, the advantages such as reverse recovery time is short, forward current is large, volume is little, simple installation.
Claims (10)
1. power semiconductor modular, comprise three phase full bridge power circuit and half-bridge voltage change-over circuit, three phase full bridge power circuit and half-bridge voltage change-over circuit link together, wherein three phase full bridge power circuit is composed in parallel by 3 half-bridge power semiconductor modules or is made up of 1 six cell power semiconductor module, it is characterized in that: described half-bridge voltage change-over circuit comprises the IGBT unit of brachium pontis and the diode of lower brachium pontis, the negative pole of the emitter of IGBT unit and the diode of lower brachium pontis links together, the collector electrode of IGBT unit is connected high-tension battery with the positive pole of the diode of lower brachium pontis respectively by power electrode.
2. power semiconductor modular according to claim 1, it is characterized in that: three phase full bridge power circuit is by IGBT unit Q1, IGBT unit Q2, IGBT unit Q3, IGBT unit Q4, IGBT unit Q5 and IGBT unit Q6 forms three phase full bridge structure, half-bridge voltage change-over circuit comprises the IGBT unit Q7 of brachium pontis and the diode D of lower brachium pontis, the emitter of IGBT unit Q7 and the negative pole of diode D link together and draw power electrode X, the emitter of IGBT unit Q1 and the collector electrode of IGBT unit Q4 link together and draw power electrode U, the emitter of IGBT unit Q2 and the collector electrode of IGBT unit Q5 link together and draw power electrode V, the emitter of IGBT unit Q3 and the collector electrode of IGBT unit Q6 link together and draw power electrode W, IGBT unit Q1, IGBT unit Q2, the collector electrode of IGBT unit Q3 and IGBT unit Q7 links together and draws power electrode DC+, IGBT unit Q4, the emitter of IGBT unit Q5 and IGBT unit Q6 and the positive pole of diode D link together and draw power electrode DC-.
3. power semiconductor modular according to claim 2, it is characterized in that: the base stage of each IGBT unit, draw control terminal G1, G2, G3, G4, G5, G6 and G7 respectively, and from the emitter of each IGBT unit, draw control terminal E1, E2, E3, E4, E5, E6 and E7 respectively, thus, from described power semiconductor modular, 6 power electrodes and 14 control terminals are drawn altogether.
4. the power semiconductor modular according to claim 1 or 2 or 3, is characterized in that: described diode is fast recovery diode.
5. the power semiconductor modular according to claim 1 or 2 or 3, is characterized in that: described diode is Ultrafast recovery diode.
6. power semiconductor modular, comprise three phase full bridge power circuit and half-bridge voltage change-over circuit, three phase full bridge power circuit and half-bridge voltage change-over circuit link together, wherein three phase full bridge power circuit is composed in parallel by 3 half-bridge power semiconductor modules or is made up of 1 six cell power semiconductor module, it is characterized in that: described half-bridge voltage change-over circuit comprises the MOSFET unit of brachium pontis and the diode of lower brachium pontis, the negative pole of the source electrode of MOSFET unit and the diode of lower brachium pontis links together, the drain electrode of MOSFET unit is connected high-tension battery with the positive pole of the diode of lower brachium pontis respectively by power electrode.
7. power semiconductor modular according to claim 6, it is characterized in that: three phase full bridge power circuit is by MOSFET unit M1, MOSFET unit M2, MOSFET unit M3, MOSFET unit M4, MOSFET unit M5 and MOSFET unit M6 forms three phase full bridge structure, half-bridge voltage change-over circuit comprises the MOSFET unit M7 of brachium pontis and the diode D0 of lower brachium pontis, the source electrode of MOSFET unit M7 and the negative pole of diode D0 link together and draw power electrode X0, the source electrode of MOSFET unit M1 and the drain electrode of MOSFET unit M4 link together and draw power electrode U0, the source electrode of MOSFET unit M2 and the drain electrode of MOSFET unit M5 link together and draw power electrode V0, the source electrode of MOSFET unit M3 and the drain electrode of MOSFET unit M6 link together and draw power electrode W0, MOSFET unit M1, MOSFET unit M2, the drain electrode of MOSFET unit M3 and MOSFET unit M7 links together and draws power electrode DC0+, MOSFET unit M4, the source electrode of MOSFET unit M5 and MOSFET unit M6 and the positive pole of diode D0 link together and draw power electrode DC0-.
8. power semiconductor modular according to claim 7, it is characterized in that: from the grid of each MOSFET unit, draw control terminal G10, G20, G30, G40, G50, G60 and G70 respectively, and from the source electrode of each MOSFET unit, draw control terminal S1, S2, S3, S4, S5, S6 and S7 respectively, thus, from described power semiconductor modular, 6 power electrodes and 14 control terminals are drawn altogether.
9. the power semiconductor modular according to claim 6 or 7 or 8, is characterized in that: described diode is fast recovery diode.
10. the power semiconductor modular according to claim 6 or 7 or 8, is characterized in that: described diode is Ultrafast recovery diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520318030.7U CN204614785U (en) | 2015-05-15 | 2015-05-15 | Power semiconductor modular |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520318030.7U CN204614785U (en) | 2015-05-15 | 2015-05-15 | Power semiconductor modular |
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| CN204614785U true CN204614785U (en) | 2015-09-02 |
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| CN201520318030.7U Active CN204614785U (en) | 2015-05-15 | 2015-05-15 | Power semiconductor modular |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106205309A (en) * | 2016-08-16 | 2016-12-07 | 江苏科技大学 | A kind of multi-function power bridge circuit |
| CN107768368A (en) * | 2016-08-23 | 2018-03-06 | 万国半导体(开曼)股份有限公司 | The ESD protections of USB c-type on-load switches |
-
2015
- 2015-05-15 CN CN201520318030.7U patent/CN204614785U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106205309A (en) * | 2016-08-16 | 2016-12-07 | 江苏科技大学 | A kind of multi-function power bridge circuit |
| CN107768368A (en) * | 2016-08-23 | 2018-03-06 | 万国半导体(开曼)股份有限公司 | The ESD protections of USB c-type on-load switches |
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