CN201490163U - On-line end-point detection system for chemical and mechanical polishing device - Google Patents
On-line end-point detection system for chemical and mechanical polishing device Download PDFInfo
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- CN201490163U CN201490163U CN2009200646174U CN200920064617U CN201490163U CN 201490163 U CN201490163 U CN 201490163U CN 2009200646174 U CN2009200646174 U CN 2009200646174U CN 200920064617 U CN200920064617 U CN 200920064617U CN 201490163 U CN201490163 U CN 201490163U
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Abstract
The utility model relates to an on-line end-point detection system for a chemical and mechanical polishing device, which comprises sensors positioned on the chemical and mechanical polishing device, a data collector and an industrial computer, wherein the sensors comprise a speed detection sensor for detecting rotation speed of a polishing disk and a current detection sensor for detecting current of a motor; output ends of the speed detection sensor and the motor current detection sensor are connected with the industrial computer by switching on the data collector. The on-line end-point detection system for the chemical and mechanical polishing device provided by the utility model can carry out the real-time sensitive on-line end-point detection for the chemical and mechanical polishing process, and can accurately detect the ending point of the chemical and mechanical polishing process.
Description
Technical field
The utility model provides a kind of online end-point detecting system that is used for chemical mechanical polishing apparatus, relates in particular to a kind of by polishing block drive motors electric current and speed are obtained the online end-point detecting system that the live signal curve is judged the CMP (Chemical Mechanical Polishing) process end point.
Background technology
In field of semiconductor technology, chemico-mechanical polishing is a kind of planarization of extensive use, be used for material the surface planarization and from the controlled removal material layer of the pellicular cascade of substrate.The main composition parts of chemical mechanical polishing apparatus have polishing disk, are bonded in the polishing pad on the polishing disk and adsorb substrate and drive the rubbing head of substrate rotation.
During chemical mechanical polishing apparatus work, rubbing head adsorbs wafer and rotates with certain speed, applying certain downforce simultaneously is pressed in wafer on the polishing pad of rotation, the polishing fluid of being made up of sub-micron or nanometer abrasive particle and chemical solution flows between silicon chip and polishing pad, polishing fluid is under the effect of the transmission of polishing pad and rotary centrifugal force, evenly distribute on it, between semiconductor substrate and polishing pad, form one deck fluid film, chemical composition in the liquid and semiconductor substrate produce chemical reaction, insoluble matter is converted into lyotrope matter, by the micromechanics friction of abrasive particle these chemical reactants are removed from silicon chip surface then, dissolve in the flowing liquid and take away, promptly in the alternation procedure of chemical membrane and mechanical striping, realize the flattening surface processing, thereby reach the purpose of overall planarization.
In the CMP (Chemical Mechanical Polishing) process, cross polishing (material is removed too much) or owe polishing (material is removed not enough) and can cause rate of finished products low.The usual manner of CMP end point determination is: thickness and the polishing speed that will remove each workpiece calibration, and to determine the polishing duration.But many different factor affecting polishing speed, and polishing speed itself can change during the processing, and this method can not be satisfactory.
The utility model content
Defective at the prior art existence, the utility model aims to provide a kind of online end-point detecting system that is used for chemical mechanical polishing apparatus, can carry out real-time, sensitive online end point determination to CMP (Chemical Mechanical Polishing) process, and can accurately detect the end point of CMP (Chemical Mechanical Polishing) process.
The technical scheme that the utility model is taked is, a kind of online end-point detecting system that is used for chemical mechanical polishing apparatus, comprise transducer, data acquisition unit and industrial computer, wherein transducer comprises the speed detection sensor that detects the polishing disk rotating speed, it is fixed in the chemical mechanical polishing apparatus on the reduction box, comprise that also one is used for detecting the current detection sensor of current of electric, it is installed in drive motors power interface place in the chemical mechanical polishing apparatus, and the output of described speed detection sensor and current of electric detecting sensor all is connected with industrial computer by inserting data acquisition unit.
Design principle of the present utility model is, the described CMP (Chemical Mechanical Polishing) process process that is used for the online end-point detecting system of chemical mechanical polishing apparatus at semiconductor substrate, draw real-time curve by electric current and speed detection to drive motors, when detecting curve table and reveal distinctive feature, judge the terminal point that draws CMP (Chemical Mechanical Polishing) process, control the operating state of burnishing device again by industrial computer.Judgment formula is calculated in described terminal point effective coverage:
E＝Z*Log(X)/Log(Y)
E---the effective judgment value of terminal point wherein; X---motor current signal value;
Y---polishing disk rate signal value; Z---signal processing coefficient
When signal curve general trend occurs and rises in the reduction process or smooth change and the endpoint zone does not have when sharply changing, then judge the terminal point of CMP (Chemical Mechanical Polishing) process.
The online end-point detecting system that is used for chemical mechanical polishing apparatus described in the utility model is analyzed the current of electric and the speed of gathering by industrial computer, CMP (Chemical Mechanical Polishing) process is carried out real-time, sensitive online end point determination, can accurately detect the end point of CMP (Chemical Mechanical Polishing) process.It is good that this online end-point detecting system detects real-time, and the precision height.
Description of drawings
Fig. 1 is the mounting structure schematic diagram that is used for the online end-point detecting system of chemical mechanical polishing apparatus described in the utility model;
Fig. 2 is the structured flowchart that is used for the online end-point detecting system of chemical mechanical polishing apparatus described in the utility model;
Fig. 3 signal variation diagram that to be the described online end-point detecting system of embodiment draw according to polishing disk current of electric and polishing disk speed.
In above-mentioned accompanying drawing:
1-polishing pad 2-polishing disk 3-polishing disk driving shaft 4-reduction box 5-is band and synchronous pulley 6-drive motors 7-polishing disk tachometric survey transducer 8-drive motors current metering sensor 9-data acquisition unit 10-industrial computer synchronously
Specific implementation method
Embodiment 1:
As shown in Figure 1, a kind of online end-point detecting system that is used for chemical mechanical polishing apparatus, chemical mechanical polishing apparatus comprises polishing disk 2, polishing pad 1, reduction box 4 and the drive motors 6 that is used to drive polishing disk 2 rotations; This drive motors is AC servo motor or variable-frequency motor.Be bonded with a polishing pad 1 on the polishing disk 2, on the driving shaft 3 of polishing disk 2 reduction box 4 is installed, drive motors 6 is by band and synchronous pulley 5 are connected with reduction box 4 synchronously, the speed detection sensor 7 that detects polishing disk 2 rotary speeies is fixed on the reduction box, and current detection sensor 8 is installed in the power interface place of drive motors 6.
As shown in Figure 2, the signal that is collected by above-mentioned speed detection sensor 7 and current detection sensor 8 sends industrial computer to by data acquisition unit, finishes following data processing by industrial computer again:
The signal variation diagram that Fig. 3 draws according to polishing disk current of electric and polishing disk speed for online end-point detecting system in the present embodiment.Curve 1 is a current of electric change mean curve, curve 2 is a polishing disk real-time speed change curve, and the point 1 that looses be the current of electric real time detection signal, and regional 1 effectively judges the zone for terminal point, it is to draw after polishing disk velocity amplitude and motor current value calculate, and its concrete computing formula is:
E＝Z*Log(X)/Log(Y)
E---the effective judgment value of terminal point wherein
X---motor current signal value
Y---polishing disk rate signal value
Z---signal processing coefficient
Wherein, the Z value is adjusted according to curve 1 current of electric average curve, generally adjusts between 10～20, and the selection of its optimum is feature 1 glossing when finishing feature and occurring, and regional 1 terminal point judges that effectively the zone overlaps with curve 1 current of electric average curve.
When the curve 1 of representing polishing disk speed changes steadily, and zone 1 does not have obviously when suddenling change (and significantly having big difference to descend or rising with last value), the curve 1 of current of electric average (is occurring rising or smooth change trend (being to have occurred utmost point low value in a period of time) in the decline process continuously, the situation that feature 1 among Fig. 3 promptly occurs can be judged this section CMP (Chemical Mechanical Polishing) process and finish.
Claims (3)
1. online end-point detecting system that is used for chemical mechanical polishing apparatus, it is characterized in that comprising the transducer, data acquisition unit and the industrial computer that are positioned on the chemical mechanical polishing apparatus, wherein transducer comprises speed detection sensor that detects the polishing disk rotating speed and the current detection sensor that is used for detecting current of electric, and the output of described speed detection sensor and current of electric detecting sensor all is connected with industrial computer by inserting data acquisition unit.
2. according to the described online end-point detecting system that is used for chemical mechanical polishing apparatus of claim 1, it is characterized in that described speed detection sensor is fixed in the chemical mechanical polishing apparatus on the reduction box.
3. according to claim 1 or the 2 described online end-point detecting systems that are used for chemical mechanical polishing apparatus, it is characterized in that described current detection sensor is installed in the power interface place of drive motors in the chemical mechanical polishing apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200646174U CN201490163U (en) | 2009-05-27 | 2009-05-27 | On-line end-point detection system for chemical and mechanical polishing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200646174U CN201490163U (en) | 2009-05-27 | 2009-05-27 | On-line end-point detection system for chemical and mechanical polishing device |
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| Publication Number | Publication Date |
|---|---|
| CN201490163U true CN201490163U (en) | 2010-05-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2009200646174U Expired - Fee Related CN201490163U (en) | 2009-05-27 | 2009-05-27 | On-line end-point detection system for chemical and mechanical polishing device |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103324131A (en) * | 2013-05-28 | 2013-09-25 | 清华大学 | Wafer copper film thickness on-line measuring module control system |
| CN105529252A (en) * | 2014-09-29 | 2016-04-27 | 盛美半导体设备（上海）有限公司 | Method of preventing polysilicon gate from being ground |
| CN106514438A (en) * | 2016-11-11 | 2017-03-22 | 武汉新芯集成电路制造有限公司 | Chemical and mechanical grinding device and grinding method thereof |
| CN107309782A (en) * | 2017-05-19 | 2017-11-03 | 天津华海清科机电科技有限公司 | The detection method and detection means of moment of torsion terminal |
| CN110394728A (en) * | 2018-04-25 | 2019-11-01 | 清华大学 | A kind of end-point detection method, system and chemical mechanical polishing apparatus |
| CN114290156A (en) * | 2021-11-30 | 2022-04-08 | 浙江晶盛机电股份有限公司 | Thickness measuring method and system in silicon wafer polishing process and polishing device |
-
2009
- 2009-05-27 CN CN2009200646174U patent/CN201490163U/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103324131A (en) * | 2013-05-28 | 2013-09-25 | 清华大学 | Wafer copper film thickness on-line measuring module control system |
| CN103324131B (en) * | 2013-05-28 | 2015-10-28 | 清华大学 | Wafer copper film thickness on-line measurement module control system |
| CN105529252A (en) * | 2014-09-29 | 2016-04-27 | 盛美半导体设备（上海）有限公司 | Method of preventing polysilicon gate from being ground |
| CN106514438A (en) * | 2016-11-11 | 2017-03-22 | 武汉新芯集成电路制造有限公司 | Chemical and mechanical grinding device and grinding method thereof |
| CN107309782A (en) * | 2017-05-19 | 2017-11-03 | 天津华海清科机电科技有限公司 | The detection method and detection means of moment of torsion terminal |
| CN110394728A (en) * | 2018-04-25 | 2019-11-01 | 清华大学 | A kind of end-point detection method, system and chemical mechanical polishing apparatus |
| CN110394728B (en) * | 2018-04-25 | 2021-03-16 | 清华大学 | End point detection method and system and chemical mechanical polishing device |
| CN114290156A (en) * | 2021-11-30 | 2022-04-08 | 浙江晶盛机电股份有限公司 | Thickness measuring method and system in silicon wafer polishing process and polishing device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100526 Termination date: 20180527 |