CN201420112Y - Grower of SiC monocrystals - Google Patents
Grower of SiC monocrystals Download PDFInfo
- Publication number
- CN201420112Y CN201420112Y CN2009200330237U CN200920033023U CN201420112Y CN 201420112 Y CN201420112 Y CN 201420112Y CN 2009200330237 U CN2009200330237 U CN 2009200330237U CN 200920033023 U CN200920033023 U CN 200920033023U CN 201420112 Y CN201420112 Y CN 201420112Y
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- sic
- seed crystal
- plumbago crucible
- sic seed
- crystal seat
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Abstract
The utility model discloses a grower of SiC monocrystals, which comprises a working chamber, wherein a pressure pin is vertically arranged in the working chamber, the lower end of the pressure pin extends out from the bottom of the working chamber, a graphite crucible is fixedly connected with the upper end of the pressure pin, a concave station is processed at an inner cavity of the graphite crucible, an SiC seed crystal cup is fixedly connected with the upper surface of the graphite crucible, a lug boss is processed on the SiC seed crystal cup, an interface is arranged between the end surface of the lug boss and the bottom surface of the concave station at the inner cavity of the graphite crucible, insulating layers are wrapped at the outer sides of the graphite crucible and the SiC seedcrystal cup, and the working chamber is connected with a vacuumizing device. The grower has simple structure and convenient charging, and SiC particles generated in vacuum pumping are not deposited close to SiC seed crystals, so the influence of the SiC particles on the growth of the SiC monocrystals is avoided, and the requirement of growth of the high quality SiC monocrystals is satisfied.
Description
Technical field
The utility model belongs to the semiconductor material preparing technical field, relates to the crystalline growing apparatus, is specifically related to a kind of growing apparatus of SiC body monocrystalline.
Background technology
SiC body monocrystalline has that energy gap is big, capability of resistance to radiation is strong, thermal conductivity is big, breaking down field strength is high and good chemical stability, is called as third generation semiconductor material.Be used for the manufacturing of electronic components such as high frequency, high-power and radioprotective, be widely used in key areas such as Aeronautics and Astronautics, geological drilling, rocket, radar.SiC body monocrystalline adopts the subliming method growth to obtain under the condition of high temperature, its process of growth is difficult to stable control, at present, in the process of growth of SiC body monocrystalline, because the effect that vacuumizes, the SiC powder is piled up near the SiC seed crystal, causes single-crystal surface to derive the SiC polycrystal, has influenced the growth and the quality thereof of SiC body monocrystalline.
The utility model content
The purpose of this utility model provides a kind of growing apparatus of SiC body monocrystalline, has solved when vacuumizing, and is easy to generate the problem that the SiC powder is piled up near the SiC seed crystal, has guaranteed the normal growth of SiC body monocrystalline.
The technical scheme that the utility model adopted is, a kind of growing apparatus of SiC body monocrystalline, comprise the working spaces, vertically be provided with pressure pin in the working spaces, stretch out from the bottom of working spaces the lower end of pressure pin, the upper end of pressure pin is connected with plumbago crucible, the inner chamber of plumbago crucible upper surface is processed with concave station, be connected with SiC seed crystal seat above the plumbago crucible, the lower surface of SiC seed crystal seat is processed with boss, be provided with interface between the bottom surface of the raised head face of SiC seed crystal seat and plumbago crucible inner chamber concave station, the outside of plumbago crucible and SiC seed crystal seat is enclosed with thermal insulation layer, and the working spaces is connected with vacuum extractor.
Feature of the present utility model also is,
Plumbago crucible and SiC seed crystal seat are affixed by screw thread.
Screw thread is made of the internal thread of plumbago crucible and the outside screw of SiC seed crystal seat.
Interface is the space between SiC seed crystal seat raised head face and the plumbago crucible concave station bottom surface.
The utility model device is by changing the structure of plumbago crucible and SiC seed crystal seat, make that the SiC powder of generation can not be deposited near the SiC seed crystal when vacuumizing, avoided that SiC is multicrystal to derive, guarantee the normal growth of SiC body monocrystalline, obtained high-quality SiC body monocrystalline.
Description of drawings
Fig. 1 is the structural representation of the utility model device.
Among the figure, 1. plumbago crucible, 2. interface, 3. screw thread, 4.SiC seed crystal, 5. seed crystal seat, 6. working spaces, 7.SiC body monocrystalline, 8. ruhmkorff coil, 9.SiC powder, 10.SiC raw material, 11. thermal insulation layers, 12. pressure pins.
Embodiment
Below in conjunction with the drawings and specific embodiments the utility model is elaborated.
The structure of the utility model growing apparatus, as shown in Figure 1.Comprise working spaces 6, vertically be provided with pressure pin 12 in the working spaces 6,7 bottom stretch out from the working spaces lower end of pressure pin 12, the bottom of the upper end of pressure pin 12 and plumbago crucible 1 is affixed, the opening of plumbago crucible 1 up, the inner chamber of plumbago crucible 1 upper surface is processed with concave station, the sidewall of this concave station is processed with internal thread, the upper edge of plumbago crucible 1 is provided with downward opening SiC seed seat 5, the lower surface of SiC seed crystal seat 5 is processed with boss, the sidewall of this boss is processed with outside screw, and the outside screw of this SiC seed crystal seat 5 and the screw-internal thread fit of plumbago crucible 1 constitute screw thread 3, and plumbago crucible 1 and SiC seed crystal seat 5 are affixed by screw thread 3.Leave the space between the end face of SiC seed crystal seat 5 boss and the plumbago crucible 1 concave station bottom surface, this space is an interface 2, the inner chamber of the inner chamber of plumbago crucible 1 and SiC seed crystal seat 5 forms an airtight cavity, and this closed chamber body is used for the growth of silicon single-crystal, and SiC seed crystal 4 is placed on the end face of SiC seed crystal seat 5 inner chambers.The outside of plumbago crucible 1 and SiC seed crystal seat 5 is enclosed with thermal insulation layer 11.The periphery of working spaces's 6 sidewalls is surrounded with ruhmkorff coil 8.Working spaces 6 is connected with working spaces 6 vacuum extractor outward.
Plumbago crucible 1 in the utility model growing apparatus is with after SiC seed crystal seat 5 is connected by screw thread 3, forms interface 2 at the internal surface of plumbago crucible body 1, and interface 2 is away from SiC seed crystal 4.When the airtight cavity to silicon monocrystal growth vacuumized, the SiC powder was deposited near the interface 2, and can not pile up near SiC seed crystal 4, had guaranteed the ideal growth of SiC body monocrystalline 7.
The working process of the utility model device:
SiC raw material 10 is packed in the plumbago crucible 1, and SiC seed crystal 4 is installed in the SiC seed crystal seat 5.Plumbago crucible 1 is connected by screw thread 3 with SiC seed crystal seat 5, and, forms reactor, this reactor is put into working spaces 7, and plumbago crucible 1 bottom is fixed in the top of pressure pin 12 at the periphery of plumbago crucible 1 and SiC seed crystal seat 5 parcel thermal insulation layer 11.Behind the airtight working spaces 7, vacuumize, in this process, the SiC powder 9 of generation is piled up near the interface 2.Then, connect the power supply of ruhmkorff coil 8,12 pairs of plumbago crucibles 1 of ruhmkorff coil, SiC seed crystal seat 4 and SiC raw material 10 heat, and make by heating that SiC raw material 10 distils in the plumbago crucible 1, and the surface growth that the SiC raw material 10 after the distillation is attached to SiC seed crystal 4 becomes SiC body monocrystalline 7.
The utility model apparatus structure is simple, charging is convenient, adopt the structure that interface 2 is set between plumbago crucible 1 upper surface and SiC seed crystal seat 4 lower surfaces, under the state of vacuumizing in the crystalline process of growth, the SiC powder 9 of generation is deposited near the interface 2, be unlikely to be piled up near the SiC seed crystal 4, avoid the influence of 9 pairs of SiC bodies of SiC powder monocrystalline, 7 growths, satisfied the requirement of high-quality SiC body monocrystalline 7 growths.
The utility model device is applicable to high temperature crystalline growths such as SiC.
Claims (4)
1. the growing apparatus of a SiC body monocrystalline, it is characterized in that, comprise working spaces (6), vertically be provided with pressure pin (12) in the working spaces (6), the bottom of (6) stretch out from the working spaces lower end of pressure pin (12), the upper end of pressure pin (12) is connected with plumbago crucible (1), the inner chamber of plumbago crucible (1) upper surface is processed with concave station, be connected with SiC seed crystal seat (5) above the plumbago crucible (1), the lower surface of SiC seed crystal seat (5) is processed with boss, be provided with interface (2) between the bottom surface of the raised head face of SiC seed crystal seat (5) and plumbago crucible (1) inner chamber concave station, plumbago crucible (1) is enclosed with thermal insulation layer (11) with the outside of SiC seed crystal seat (5), and working spaces (6) are connected with vacuum extractor.
2. growing apparatus according to claim 1 is characterized in that, described plumbago crucible (1) and SiC seed crystal seat (5) are affixed by screw thread (3).
3. growing apparatus according to claim 2 is characterized in that, described screw thread (3) is made of the internal thread of plumbago crucible (1) and the outside screw of SiC seed crystal seat (5).
4. growing apparatus according to claim 1 is characterized in that, described interface (2) is the space between SiC seed crystal seat (5) raised head face and plumbago crucible (1) the concave station bottom surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200330237U CN201420112Y (en) | 2009-05-11 | 2009-05-11 | Grower of SiC monocrystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200330237U CN201420112Y (en) | 2009-05-11 | 2009-05-11 | Grower of SiC monocrystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201420112Y true CN201420112Y (en) | 2010-03-10 |
Family
ID=41806766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009200330237U Expired - Fee Related CN201420112Y (en) | 2009-05-11 | 2009-05-11 | Grower of SiC monocrystals |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201420112Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102534763A (en) * | 2012-01-17 | 2012-07-04 | 山东天岳先进材料科技有限公司 | Graphite crucible for growing large-size silicon carbide single crystal by physical vapor deposition method and application thereof |
| CN102586858A (en) * | 2012-04-01 | 2012-07-18 | 北京华进创威电子有限公司 | Double-crucible device for growing single crystals through induction heating physical vapor phase transfer |
-
2009
- 2009-05-11 CN CN2009200330237U patent/CN201420112Y/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102534763A (en) * | 2012-01-17 | 2012-07-04 | 山东天岳先进材料科技有限公司 | Graphite crucible for growing large-size silicon carbide single crystal by physical vapor deposition method and application thereof |
| CN102586858A (en) * | 2012-04-01 | 2012-07-18 | 北京华进创威电子有限公司 | Double-crucible device for growing single crystals through induction heating physical vapor phase transfer |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: XI AN XINJING ELECTRO-OPTICS SCIENCE + TECHNOLOGY Free format text: FORMER OWNER: XI AN UNIV. OF SCIENCE AND ENGINEERING Effective date: 20120517 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 710048 XI AN, SHAANXI PROVINCE TO: 710100 XI AN, SHAANXI PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20120517 Address after: 710100, Xi'an aerospace industry base, No. two, industrial road, Shaanxi 55, China Patentee after: Xi'an Xin Jing Optoelectronics Technology Co., Ltd. Address before: 710048 Shaanxi city of Xi'an Province Jinhua Road No. 5 Patentee before: Xi'an University of Technology |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100310 Termination date: 20150511 |
|
| EXPY | Termination of patent right or utility model |