CN201185222Y - Integration wave-guide solid power-dividing device for substrate - Google Patents
Integration wave-guide solid power-dividing device for substrate Download PDFInfo
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- CN201185222Y CN201185222Y CNU2008200337388U CN200820033738U CN201185222Y CN 201185222 Y CN201185222 Y CN 201185222Y CN U2008200337388 U CNU2008200337388 U CN U2008200337388U CN 200820033738 U CN200820033738 U CN 200820033738U CN 201185222 Y CN201185222 Y CN 201185222Y
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Abstract
The utility model discloses a chip integrated waveguide stereo power-splitter. The two sides of a first rectangular metal strip arranged in the middle are respectively connected with the broadsides of a first conical metal strip and a second conical metal strip in the median direction, and are coated on one side of a medium plate; the edge of the second metal strip is connected with the broadside of a third 3-dimensional conical metal strip along the median direction, and is coated on the other side of the medium plate, and the third conical metal strip is arranged above the second conical metal strip in a symmetrical manner; the first rectangular metal strip and the second rectangular metal strip are put through two rows of metallized through-holes and are interconnected, and a metal clapboard is arranged in the middle part inside the medium plate. The utility model can operate at the X-waveband ranging from 8GHz to 2GHz; the structure is simple and is easy to fabricate, the cost is low and the Q value is relatively high, the loss is relatively low; and in addition, the utility model is capable of operating at a relatively broad bandwidth, therefore, the utility model is applicable to the design of millimeter-wave components and systems; the size of the chip integrated waveguide stereo power-splitter is reduced by half, the thickness remains unchanged, and the power-splitter can be integrated into the millimeter-wave component and system more easily.
Description
Technical field
The utility model belongs to the design that is used for microwave and millimeter wave assembly and system, the three-dimensional power splitter of particularly a kind of substrate integration wave-guide.
Background technology
The microwave and millimeter wave power splitter has obtained a large amount of application in microwave and millimeter wave assembly and system, especially in antenna-feedback system, it is a critical component, and requires low, the bandwidth of loss.Microstrip power divider commonly used its characteristic on centre frequency is comparatively desirable, but in case frequency deviation takes place, and the performance of whole power splitter all can variation, thereby influences the performance of whole system.Utilize metal waveguide can produce high Q value, low-loss, wide band power divider, but exist volume big, be difficult to shortcomings such as integrated.And adopt substrate integrated waveguide technology not only can cut down finished cost and technology difficulty, and be easy to be integrated among the design of microwave and millimeter wave assembly and system.
The utility model content
The purpose of this utility model is to provide a kind of 8GHz of being operated in to the three-dimensional power splitter of the substrate integration wave-guide on the X-band of 12GHz.
The technical solution that realizes the utility model purpose is: the three-dimensional power splitter of a kind of substrate integration wave-guide, the dual-side of the first rectangle metal patch in the middle of being arranged on links to each other with the broadside of first and second cone-shaped metal paster respectively along the center, is overlying on the one side of dielectric-slab; The center, edge of the second rectangle metal patch links to each other with the broadside of third hand tap shape metal patch, is overlying on the another side of dielectric-slab, and this third hand tap shape metal patch and the second cone-shaped metal paster are symmetry up and down; First and second rectangle metal patch links to each other by the two row's plated-through holes that pass dielectric-slab, and in the middle, inside of dielectric-slab metal partion (metp) is set.
The utility model compared with prior art, its remarkable advantage is: (1) has utilized the rectangular metal waveguide to have high Q value, low-loss characteristics, has realized substrate integration wave-guide on the basis of dielectric substrate, is operated in 8GHz to the X-band of 12GHz.(2) structure processing is simple, with low cost, has higher Q value, lower loss, and be operated in the bandwidth of broad, be applicable to the design of microwave and millimeter wave assembly and system.(3) volume of the three-dimensional power splitter of substrate integration wave-guide reduces half, and thickness is constant, easier being integrated in microwave and millimeter wave assembly and the system, and bandwidth of operation is broad also, has stronger Practical Performance.
Below in conjunction with accompanying drawing the utility model is described in further detail.
Description of drawings
Fig. 1 is the vertical view according to the device that the utility model proposes.
Fig. 2 is the plan view according to the device that the utility model proposes.
Fig. 3 is the utility model plated-through hole schematic diagram.
Embodiment
In conjunction with Fig. 1 and Fig. 2, the three-dimensional power splitter of the utility model substrate integration wave-guide, the dual-side of the first rectangle metal patch 1 in the middle of being arranged on links to each other with the broadside of first and second cone- shaped metal paster 5,6 respectively along the center, is overlying on the one side of dielectric-slab 2; The center, edge of the second rectangle metal patch 3 links to each other with the broadside of third hand tap shape metal patch 7, is overlying on the another side of dielectric-slab 2, and this third hand tap shape metal patch 7 and the second cone-shaped metal paster 6 are symmetry up and down; First and second rectangle metal patch 1,3 links to each other by the two row's plated-through holes that pass dielectric-slab 2, and in the middle, inside of dielectric-slab 2 metal partion (metp) 4 is set.
In conjunction with Fig. 3, dielectric-slab 2 length L 1 of the three-dimensional power splitter of the utility model substrate integration wave-guide are 88.5mm, and width W 2 is 20-22mm; Metal partion (metp) 4 length L 2 are 45-48mm, the first rectangle metal patch, 1 length L 3 is 48.5-50mm, first length L 4 to third hand tap shape metal patch 5,6,7 cone-shaped metal pasters all is 14.1mm, and two parallel edges W3 and W4 are respectively 4.7-4.9mm and 1.5-1.6mm; Two row's plated-through hole spacing W1 are 14.4-15mm, and the length of the second rectangle metal patch 3 is 68.5-69mm, and width is 20-22mm, and dielectric-slab 2 thickness h are 0.5mm, and dielectric constant is 2.2; The metal throuth hole diameter d is 2mm, and pitch of holes S is 3.5-3.7mm.
Embodiment: in conjunction with Fig. 1, Fig. 2, Fig. 3, be example at the three-dimensional power splitter of the substrate integration wave-guide of 8-12GHz, describe structure of the present utility model in detail with working frequency range.
Thickness h is to insert the metal partion (metp) 4 that a block length is 45mm on one side along it in the dielectric-slab 2 of 0.5mm, and the length of dielectric-slab 2 is 88.5mm, and the width of dielectric-slab 2 and metal partion (metp) 4 all is 20mm.The one side of dielectric-slab 2 is a metal patch, it is made up of one first rectangle metal patch 1, the first cone-shaped metal paster 5, the second cone-shaped metal paster 6 and two strip metal conduction bands, the length of the first rectangle metal patch 1 is 48.5mm, width is 20mm, the first taper paster 5 and the second taper paster 6 measure-alike, article two, parallel edges is respectively 1.5mm and 4.7mm, and length is 14.1mm.The another side of dielectric-slab 2 is covered with the second rectangle metal patch 3 and third hand tap shape metal patch 7, and wherein the size of third hand tap shape paster 7 is identical with the second taper paster 6, and the length of the second rectangle metal patch 3 is 68.5mm, and width is 20mm.The first rectangle metal patch 1 that is positioned at dielectric-slab 2 both sides links to each other by two row's plated-through holes with the second rectangle metal patch 3, and two row's metal aperture are symmetrical distribution at a distance of 14.4mm along the first rectangle metal patch, 1 long axis direction.The metal aperture diameter is 2mm, and pitch of holes is 3.5mm.
Signal is from the input input on the left side, and the metal partion (metp) 4 by the middle in substrate integration wave-guide is divided into two paths of signals, respectively from two output outputs up and down, merit branches such as realization.The medium dielectric constant of selecting for use is 2.2, and the result shows in the 9.1GHz-11.6GHz frequency range, and S11 is less than-20dB, the transmission coefficient of two output ports is all approaching-and 3dB, relative bandwidth is near 30%.
Claims (2)
1, the three-dimensional power splitter of a kind of substrate integration wave-guide, it is characterized in that: the dual-side of the first rectangle metal patch [1] in the middle of being arranged on links to each other with the broadside of first and second cone-shaped metal paster [5,6] respectively along the center, is overlying on the one side of dielectric-slab [2]; The center, edge of the second rectangle metal patch [3] links to each other with the broadside of third hand tap shape metal patch [7], is overlying on the another side of dielectric-slab [2], and this third hand tap shape metal patch [7] is symmetry up and down with the second cone-shaped metal paster [6]; First and second rectangle metal patch [1,3] links to each other by the two row's plated-through holes that pass dielectric-slab [2], and in the middle, inside of dielectric-slab [2] metal partion (metp) [4] is set.
2, the three-dimensional power splitter of substrate integration wave-guide according to claim 1, it is characterized in that: dielectric-slab [2] length L 1 is 88.5mm, and width W 2 is 20-22mm; Metal partion (metp) [4] length L 2 is 45-48mm, first rectangle metal patch [1] length L 3 is 48.5-50mm, first length L 4 to third hand tap shape metal patch [5,6,7] cone-shaped metal paster all is 14.1mm, and two parallel edges W3 and W4 are respectively 4.7-4.9mm and 1.5-1.6mm; Two row's plated-through hole spacing W1 are 14.4-15mm, and the length of the second rectangle metal patch [3] is 68.5-69mm, and width is 20-22mm, and dielectric-slab [2] thickness h is 0.5mm, and dielectric constant is 2.2; The metal throuth hole diameter d is 2mm, and pitch of holes S is 3.5-3.7mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200337388U CN201185222Y (en) | 2008-04-03 | 2008-04-03 | Integration wave-guide solid power-dividing device for substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200337388U CN201185222Y (en) | 2008-04-03 | 2008-04-03 | Integration wave-guide solid power-dividing device for substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201185222Y true CN201185222Y (en) | 2009-01-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNU2008200337388U Expired - Fee Related CN201185222Y (en) | 2008-04-03 | 2008-04-03 | Integration wave-guide solid power-dividing device for substrate |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102810704A (en) * | 2012-08-06 | 2012-12-05 | 哈尔滨工业大学 | Full-mode double-ridge substrate integrated waveguide in balanced microstrip line transition |
| CN102142593B (en) * | 2010-02-02 | 2014-06-04 | 南京理工大学 | Small broadband substrate integrated waveguide planar magic-T structure |
| CN103943928A (en) * | 2014-05-08 | 2014-07-23 | 东南大学 | Plane balun with filter and power dividing characteristics |
-
2008
- 2008-04-03 CN CNU2008200337388U patent/CN201185222Y/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102142593B (en) * | 2010-02-02 | 2014-06-04 | 南京理工大学 | Small broadband substrate integrated waveguide planar magic-T structure |
| CN102810704A (en) * | 2012-08-06 | 2012-12-05 | 哈尔滨工业大学 | Full-mode double-ridge substrate integrated waveguide in balanced microstrip line transition |
| CN102810704B (en) * | 2012-08-06 | 2014-10-01 | 哈尔滨工业大学 | Full-mode double-ridge substrate integrated waveguide in balanced microstrip line transition |
| CN103943928A (en) * | 2014-05-08 | 2014-07-23 | 东南大学 | Plane balun with filter and power dividing characteristics |
| CN103943928B (en) * | 2014-05-08 | 2016-03-23 | 东南大学 | A kind of have filtering and the intrinsic planar Balun of merit |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090121 Termination date: 20100403 |