CN201112382Y - 新型整流桥 - Google Patents

新型整流桥 Download PDF

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Publication number
CN201112382Y
CN201112382Y CNU2007200812461U CN200720081246U CN201112382Y CN 201112382 Y CN201112382 Y CN 201112382Y CN U2007200812461 U CNU2007200812461 U CN U2007200812461U CN 200720081246 U CN200720081246 U CN 200720081246U CN 201112382 Y CN201112382 Y CN 201112382Y
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material layer
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lead frame
nickel
layer
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邓华鲜
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Leshan Share Electronic Co.,Ltd.
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LESHAN SHARE ELECTRONIC CO Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/1576—Iron [Fe] as principal constituent
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    • H01L2924/181—Encapsulation

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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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Abstract

本实用新型公开了一种新型整流桥。本实用新型包括引线架和与引线架连接成一体的引脚，所述引脚内层为铁材料层，铁材料层外为电镀的镍材料层，镍材料层外为铜材料层，铜材料层外为电镀的锡材料外层；所述引线架内层为铁材料层，铁材料层外为电镀的镍材料层，镍材料层外为铜材料层。上述结构代替了现有的KFC铜材，本实用新型和KFC铜材结构的整流桥在电性能上没有明显差异，但本实用新型成本远低于KFC铜材结构的整流桥，且本实用新型比KFC铜材结构的整流桥柔韧弯曲性能更好，便于多次弯曲焊接，电镀材料层不会脱落。

Description

新型整流桥
技术领域
本实用新型涉及一种半导体整流器件，尤其涉及一种新型整流桥。
背景技术
现有整流桥的引脚和引线架均采用KFC铜材制成，由于铜材价格的不断上涨，使整流桥的生产成本不断增加，给企业的生存造成较大的影响。且采用铜制成的整流桥，其引脚的柔韧弯曲性能不佳，不能进行多次弯曲，不能满足客户多次焊接的需求。
发明内容
本实用新型的目的在于克服现有整流桥存在的上述问题，提供一种新型整流桥。本实用新型引脚和引线架结构为铜、镍和铁的结合，降低了生产成本，且柔韧弯曲性能比铜结构的整流桥更好。
为实现上述目的，本实用新型采用的技术方案如下：
一种新型整流桥，包括引线架和与引线架连接成一体的引脚，其特征在于：所述引脚内层为铁材料层，铁材料层外为电镀的镍材料层，镍材料层外为铜材料层，铜材料层外为电镀的锡材料外层；所述引线架内层为铁材料层，铁材料层外为电镀的镍材料层，镍材料层外为铜材料层。
所述引线架包裹在绝缘环氧塑封料层中。
采用本实用新型的优点在于：
采用电镀的方法，使引脚内层为铁材料层，铁材料层外为电镀的镍材料层，镍材料层外为铜材料层，铜材料层外为电镀的锡材料外层；所述引线架内层为铁材料层，铁材料层外为电镀的镍材料层，镍材料层外为铜材料层，上述结构代替了现有的KFC铜材，本实用新型和KFC铜材结构的整流桥在电性能上没有明显差异，但本实用新型成本远低于KFC铜材结构的整流桥，且本实用新型比KFC铜材结构的整流桥柔韧弯曲性能更好，便于多次弯曲焊接，电镀材料层不会脱落。
附图说明
图1为本实用新型结构示意图
图中标记为：1、引线架，2、引脚，3、铁材料层，4、镍材料层，5、铜材料层，6、锡材料外层，7、绝缘环氧塑封料层。
具体实施方式
本实用新型包括引线架1和与引线架1连接成一体的引脚2，所述引脚内层为铁材料层3，铁材料层3外为电镀的镍材料层4，镍材料层4外为铜材料层5，铜材料层5外为电镀的锡材料外层6；所述引线架内层为铁材料层3，铁材料层3外为电镀的镍材料层4，镍材料层4外为铜材料层5。且引线架1包裹在绝缘环氧塑封料层7中。
本实用新型的生产过程如下：先在铁制的引线架1和引脚2上电镀一层镍材料层4，再在镍材料层4上电镀铜材料层5，将芯片8、引线架1和焊片组装在磨具内，高温焊接炉将焊片融化达到三种材料结合，再用环氧塑封料将已烧结好的半成品引线架进行塑封，经高温固化，在已成型的整流桥表面电镀锡材料层6。
显然，本领域的普通技术人员根据所掌握的技术知识和惯用手段，根据以上所述内容，还可以作出不脱离本实用新型基本技术思想的多种形式，这些形式上的变换均在本实用新型的保护范围之内。

Claims (2)

1、一种新型整流桥，包括引线架(1)和与引线架(1)连接成一体的引脚(2)，其特征在于：所述引脚(2)内层为铁材料层(3)，铁材料层(3)外为电镀的镍材料层(4)，镍材料层(4)外为铜材料层(5)，铜材料层(5)外为电镀的锡材料外层(6)；所述引线架(1)内层为铁材料层(3)，铁材料层外为电镀的镍材料层(4)，镍材料层(4)外为铜材料层(5)。
2、根据权利要求1所述的新型整流桥，其特征在于：所述引线架(1)包裹在绝缘环氧塑封料层(7)中。
CNU2007200812461U 2007-09-26 2007-09-26 新型整流桥 Expired - Lifetime CN201112382Y (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101524786B (zh) * 2009-04-24 2011-04-06 邓华鲜 整流桥多层烧结焊接工艺
CN111375558A (zh) * 2018-12-29 2020-07-07 乐山希尔电子股份有限公司 一种耐压测试装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101524786B (zh) * 2009-04-24 2011-04-06 邓华鲜 整流桥多层烧结焊接工艺
CN111375558A (zh) * 2018-12-29 2020-07-07 乐山希尔电子股份有限公司 一种耐压测试装置
CN111375558B (zh) * 2018-12-29 2024-01-09 乐山希尔电子股份有限公司 一种耐压测试装置

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Address after: High tech Zone in Sichuan city of Leshan Province South Road 614000 No. 3

Patentee after: Leshan Share Electronic Co.,Ltd.

Address before: 3 No. 614000 Sichuan city of Leshan province high tech Zone South Road

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Granted publication date: 20080910