CN1988760A - Base plate rear section treating method - Google Patents
Base plate rear section treating method Download PDFInfo
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- CN1988760A CN1988760A CN 200510121214 CN200510121214A CN1988760A CN 1988760 A CN1988760 A CN 1988760A CN 200510121214 CN200510121214 CN 200510121214 CN 200510121214 A CN200510121214 A CN 200510121214A CN 1988760 A CN1988760 A CN 1988760A
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- substrate
- electrode material
- photoresist layer
- base plate
- rear section
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Abstract
A post-processing method of substrate, including the following steps: providing a substrate, which includes a basement, a photoresist layer covering the basement with a particular logo, and an electrode material layer coating the photoresist layer and the basement, providing a groove for removing photoresist, putting the basement in the groove and removing the photoresist layer and the coating electrode material, retrieving the electrode material.
Description
[technical field]
The invention relates to a kind of base plate rear section treating method, especially a kind of base plate rear section treating method that can reclaim electrode material.
[background technology]
LCD (Liquid Crystal Display, LCD) and organic light emitting display (Organic Light Emitting Display, OLED) in, generally be provided with one and drive panel and display voltage is provided or shows electric current.A kind of structure of driving panel 1 of prior art as shown in Figure 1, it comprises that one is provided with a plurality of thin-film transistors (Thin Film Transistor, substrate 10 TFT) and be arranged on a plurality of transparency electrodes 13 in this substrate 10.The effect of this transparency electrode 13 is to provide display voltage or for organic light emitting display provides the demonstration electric current for LCD, its by tin indium oxide (Indium Tin Oxide, ITO) or indium zinc oxide (Indium Zinc Oxide IZO) makes.
The manufacture method of this driving panel 1 comprises the steps:
See also Fig. 2, a substrate 10 is provided.
In this substrate 10, form a photoresistance (Photo Resister, PR) layer 12.See also Fig. 3, this photoresist layer 12 has a specific pattern, and promptly these substrate 10 subregions are coated with photoresistance, and other zone does not then have photoresistance to cover.These photoresist layer 12 manufacture methods are as described below: uniform deposition one deck photoresistance in this substrate 10, and adopt the light shield of a specific pattern that this layer photoresistance exposed, develops, form the photoresist layer 12 of specific pattern at last.
See also Fig. 4, deposition layer of transparent electrode material in this photoresist layer 12 and this substrate 10.Wherein, the transparent electrode material that is deposited in this substrate 10 forms a plurality of transparency electrodes 13, and the transparent electrode material that is deposited on this photoresist layer 12 forms a plurality of metal derbies 14.This transparent electrode material can be tin indium oxide or indium zinc oxide.
See also Fig. 5, remove this photoresist layer 12, this metal derby 14 also comes off thereupon, forms driving panel 1 as shown in Figure 1.
Yet indium metal is a rare mineral, and the place of production and output are limited, and industry is removed this photoresist layer 12 and this metal derby 14 of forming by tin indium oxide or indium zinc oxide after, generally they are not recycled, thereby cause unnecessary waste.
[summary of the invention]
In order to overcome the phenomenon of prior art electrode material waste, provide a kind of base plate rear section treating method of recyclable electrode material real for necessary.
A kind of base plate rear section treating method, it may further comprise the steps: a substrate is provided, and this substrate comprises a substrate, a photoresist layer and an electrode material layer, and this photoresist layer covers in this substrate, it has a specific pattern, and this electrode material layer is coated in this photoresist layer and this substrate; One removing photoresistance groove is provided; Be placed on this substrate in this removing photoresistance groove and remove this photoresist layer and cover electrode material on this photoresist layer; Reclaim this electrode material.
Compared to prior art, this method can be recycled making the electrode material that produces in the substrate process, avoids waste.
[description of drawings]
Fig. 1 is the structural representation of a kind of thin film transistor-driven face plate of prior art.
Fig. 2 is a schematic diagram of making the substrate that the method for driving panel shown in Figure 1 provides.
Fig. 3 is this manufacture method forms a photoresist layer in the substrate that Fig. 1 provides a schematic diagram.
Fig. 4 is this manufacture method deposits a transparent electrode material in a structure shown in Figure 3 schematic diagram.
Fig. 5 be this manufacture method with the photoresist layer of structure shown in Figure 4 and on the schematic diagram removed of transparent electrode material.
Fig. 6 is the structural representation of the substrate used in base plate rear section treating method first execution mode of the present invention.
Fig. 7 is the structural representation of the removing photoresistance groove of processing method first execution mode use of the present invention.
Fig. 8 be remove in processing method first execution mode of the present invention suprabasil photoresist layer and on the schematic diagram of transparent electrode material.
Fig. 9 is the schematic diagram that reclaims deluster blocking solution and transparent electrode material in processing method first execution mode of the present invention.
Figure 10 is the structural representation of a substrate of base plate rear section treating method second execution mode use of the present invention.
Figure 11 is a shower nozzle of processing method second execution mode use of the present invention and the schematic diagram of a removing photoresistance groove.
Figure 12 be remove in processing method second execution mode of the present invention suprabasil photoresist layer and on the schematic diagram of transparent electrode material.
[embodiment]
Base plate rear section treating method first execution mode of the present invention may further comprise the steps:
A., one substrate is provided.See also Fig. 6, this substrate 2 comprises that a substrate 20, is arranged on the photoresist layer 22 of the specific pattern in this substrate 20 and one deck and covers transparent electrode material on this substrate 20 and this photoresist layer 22.Wherein, the transparent electrode material that covers in this substrate 20 forms a plurality of transparency electrodes 23, and the transparent electrode material that covers on this photoresist layer 22 forms a plurality of metal derbies 24.This transparent electrode material is tin indium oxide or indium zinc oxide.
B., one removing photoresistance groove is provided.See also Fig. 7, this removing photoresistance groove 3 has a holding part 30, a valve 31 and a filter 33.In this holding part 30 blocking solution 35 of delustering is housed, this blocking solution 35 of delustering can be dissolved this photoresist layer 22.This valve 31 is arranged on the bottom of this holding part 30 and is closed condition, keeps this blocking solution 35 of delustering to stay in this holding part 30.
C. in this removing photoresistance groove, remove this photoresist layer and this metal derby.See also Fig. 8, this substrate 2 is placed in this removing photoresistance groove 3, feed nitrogen and stir this blocking solution 35 of delustering.This blocking solution 35 of delustering is with these photoresist layer 22 dissolvings, and this metal derby 24 also separates with this substrate 2 thereupon.In this step, nitrogen can be replaced to other not with the gas of this blocking solution 35 reaction of delustering, also can utilize ultrasonic waves to shake this blocking solution 35 of delustering, to quicken this blocking solution 35 these photoresist layers 22 of dissolving that deluster.
D. reclaim this deluster blocking solution and this metal derby.See also Fig. 9, open this valve 31, this delusters blocking solution 35 and the photoresist layer 22 that is dissolved in wherein flows out through this filter 33, and 24 of this metal derbies are deposited on this filter 33.After this, then can reclaim respectively, reuse this metal derby 24 that this delusters blocking solution 35 and is formed by tin indium oxide or indium zinc oxide this deluster blocking solution 35 and this metal derby 24.
Base plate rear section treating method second execution mode of the present invention may further comprise the steps:
A., one substrate is provided.See also Figure 10, this substrate 4 and these substrate 2 structural similarities, it comprises a substrate 40, a photoresist layer 42, a plurality of transparency electrode 43 and a plurality of metal derby 44.This transparency electrode 43 and this metal derby 44 are to be formed by same material, and it is tin indium oxide or indium zinc oxide.
B., one a removing photoresistance groove and a shower nozzle are provided.See also Figure 11, this removing photoresistance groove 5 has a holding part 50 and a filter 53.This shower nozzle 6 is arranged on this removing photoresistance groove 5 tops.
C. in this removing photoresistance groove, remove this photoresist layer and this metal derby and reclaim this metal derby.See also Figure 12, this substrate 4 is put in this removing photoresistance groove 5, provide one to deluster blocking solution 55 by these shower nozzle 6 these substrates 4 of sprinkling, this photoresist layer 42 and this metal derby 44 separate with this substrate 4.This photoresist layer 42 is dissolved in this blocking solution 55 and leach through this filter 53 with this blocking solution 55 of delustering of delustering, and 44 of this metal derbies are deposited on this filter 53, and are last, reclaim this deluster blocking solution 55 and this metal derby 44 respectively.
Compared to prior art, base plate rear section treating method of the present invention can to this metal derby 24,44 of being formed by tin indium oxide or indium zinc oxide and this blocking solution 35,55 of delustering reclaims and utilize once more, avoids waste.
Claims (8)
1. base plate rear section treating method, it may further comprise the steps: a. provides a substrate, and this substrate comprises a substrate, a photoresist layer and an electrode material layer, and this photoresist layer is coated in this substrate, it has a specific pattern, and this electrode material layer is coated in this photoresist layer and this substrate; B., one removing photoresistance groove is provided; C. this substrate is placed in this removing photoresistance groove and removes this photoresist layer and cover electrode material on this photoresist layer; D. reclaim this electrode material.
2. base plate rear section treating method as claimed in claim 1 is characterized in that: this electrode material is tin indium oxide or indium zinc oxide.
3. base plate rear section treating method as claimed in claim 1 is characterized in that: among the step c, this removing photoresistance groove has the blocking solution of delustering, and this photoresist layer is dissolved in this blocking solution of delustering, and the electrode material on it separates with this substrate thereupon.
4. base plate rear section treating method as claimed in claim 3 is characterized in that: among the step c, feed a gas and stir this blocking solution of delustering.
5. base plate rear section treating method as claimed in claim 4 is characterized in that: among the step c, this gas is nitrogen.
6. base plate rear section treating method as claimed in claim 3 is characterized in that: among the step c, utilize ultrasonic waves to shake this blocking solution of delustering.
7. base plate rear section treating method as claimed in claim 1 is characterized in that: among the step c, provide a shower nozzle, feed at this shower nozzle and deluster blocking solution and spray this substrate, remove this photoresist layer and covering electrode material thereon.
8. base plate rear section treating method as claimed in claim 1 is characterized in that: in the steps d, at this removing photoresistance trench bottom one filter is set, this filter leaches this blocking solution of delustering and this electrode material is stayed in this removing photoresistance groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510121214 CN1988760A (en) | 2005-12-23 | 2005-12-23 | Base plate rear section treating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510121214 CN1988760A (en) | 2005-12-23 | 2005-12-23 | Base plate rear section treating method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1988760A true CN1988760A (en) | 2007-06-27 |
Family
ID=38185350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510121214 Pending CN1988760A (en) | 2005-12-23 | 2005-12-23 | Base plate rear section treating method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1988760A (en) |
-
2005
- 2005-12-23 CN CN 200510121214 patent/CN1988760A/en active Pending
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