CN1988077B - Method for producing capacitor - Google Patents

Method for producing capacitor Download PDF

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Publication number
CN1988077B
CN1988077B CN 200510121258 CN200510121258A CN1988077B CN 1988077 B CN1988077 B CN 1988077B CN 200510121258 CN200510121258 CN 200510121258 CN 200510121258 A CN200510121258 A CN 200510121258A CN 1988077 B CN1988077 B CN 1988077B
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China
Prior art keywords
semi
opaque region
layer
light
light shield
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Expired - Fee Related
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CN 200510121258
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CN1988077A (en
Inventor
颜硕廷
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Innolux Shenzhen Co Ltd
Chi Mei Optoelectronics Corp
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Innolux Shenzhen Co Ltd
Chi Mei Optoelectronics Corp
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Abstract

This invention relates to a manufacturing method for capacitors including the following steps: providing a base plate, depositing a first metal layer, an insulation layer and a photoresisting layer on it orderly, providing a first blend including two light-transmission regions with different transmission rates, utilizing said first blend to expose the first photoresisting layer and developing it to form a first photoresisting pattern in different thickness, etching said pattern and part of the insulation layer to form an insulation layer in different thickness, depositing a second metal layer and a second photoresisting layer on said residual insulation layer orderly, utilizing a second blend to expose the second photoresisting layer and developing said second layer to form a second pattern, etching part of the second metal layer un-covered by the second photoresisting layer to form a metal pattern and removing said second photoresisting layer pattern.

Description

Method for producing capacitor
[technical field]
The present invention relates to a kind of method for producing capacitor.
[background technology]
Because electric capacity has characteristics such as charging and discharge, has become indispensable significant components in the alternating current circuit.At present, the application of electric capacity on market is more and more important.
Seeing also Fig. 1, is the flow chart of prior art method for producing capacitor, and this method for producing capacitor comprises twice light shield (Photomask) processing procedure, and concrete steps are as follows:
One, the first road light shield processing procedure
Step 1 provides a substrate 10, deposits a first metal layer 11 and make its patterning (figure does not show) on this substrate 10, deposits an insulating barrier 12 and one first photoresistance (Photoresist) layer 13 then successively on this first metal layer 11, as shown in Figure 2.
Step 2 provides a light shield 14, and it has a predetermined pattern, comprises a plurality of light tight districts 141 and a plurality of transparent area 142, and this light tight district 141 is provided with at interval with this transparent area 142, as shown in Figure 3.
Step 3, this light shield 14 is placed this first photoresist layer, 13 tops, with UV-irradiation, make the photoresistance of transparent area 142 correspondences of this light shield 14 that photoresponse partly take place, then to the photoresistance that photoresponse takes place partly develop (Develop), remove the photoresistance part that photoresponse takes place, and then on this first photoresist layer 13, form this predetermined pattern, promptly form the first photoresistance pattern 131 as shown in Figure 4.
Step 4 is utilized stripper (Strippe), HF and NH 4F three's mixed solution is as etch material (Etchant), etching (Etch) this first photoresistance pattern 131 and insulating barrier 12, and etched intact until this first photoresistance pattern 131, as shown in Figure 5, this predetermined pattern is transferred to this insulating barrier 12.
Two, the second road light shield processing procedure
Step 5 deposits one second metal level 15 and one second photoresist layer 16, as shown in Figure 6 successively on residue insulating barrier 12.
Step 6, this light shield 14 is provided once more, as shown in Figure 7, and this light shield 14 placed this second photoresist layer, 16 tops, with UV-irradiation, make the photoresistance of transmission region 142 correspondences of this light shield 14 that photoresponse partly take place, then the photoresistance that photoresponse takes place is partly developed, remove the photoresistance part that photoresponse takes place, and then on this second photoresist layer 16, form this predetermined pattern, promptly form the second photoresistance pattern 161 as shown in Figure 8.
Step 7 is this second metal level 15 of shade etching with this second photoresistance pattern 161, and is not etched by the metal part of these second photoresistance pattern, 161 coverings as shown in Figure 9, the metal pattern 151 that residue is covered by this second photoresistance pattern 161.
Step 8 utilizes acetone (Acetone) that this second photoresistance pattern 161 is removed, as shown in figure 10.
Through above-mentioned steps, promptly form a plurality of electric capacity 180, it comprises this first metal layer 11, metal pattern 151 and is sandwiched in therebetween insulating barrier 12.The capacitance of this electric capacity 180 is calculated by following formula:
C ST = ϵ · A d
Wherein, C STThe capacitance of representing this electric capacity 180, ε represent to be positioned at the dielectric constant of this insulating barrier 12, and A represents the corresponding area of this first metal layer 11 and metal pattern 151, and d represents the thickness of this insulating barrier 12.Therefore, the capacitance C of this electric capacity 180 STBe directly proportional with the corresponding area A of this first metal layer 11, metal pattern 151, be inversely proportional to thickness d.
In these electric capacity 180 manufacture processes, the thickness d and the DIELECTRIC CONSTANT of the insulating barrier 12 of this electric capacity 180 are normally changeless, thereby control the capacitance C of this electric capacity 180 STBe to realize by the corresponding area A that increases or reduce this first metal layer 11 and metal pattern 151.Yet, the corresponding area A that increases this first metal layer 11 and metal pattern 151 in some applications can be brought harmful effect, for example in LCD, the corresponding area that increases this first metal layer 11 and metal pattern 151 can reduce the aperture opening ratio (Aperture Ratio) in this liquid crystal display pixel zone by A, thereby influences the display effect of LCD.
[summary of the invention]
Can bring dysgenic problem in order to overcome prior art method for producing capacitor control capacitance value, be necessary to provide a kind of effectively method for producing capacitor of control capacitance value.
A kind of method for producing capacitor, it comprises the steps: to provide a substrate, deposits a first metal layer, an insulating barrier and one first photoresist layer successively; One first light shield is provided, and it comprises two transparent areas that light transmittance is different, and the light transmittance of this transparent area utilizes this first light shield to this first photoresist layer exposure more than or equal to 0 and less than 1, and this first photoresist layer that develops, and forms the first different photoresistance pattern of thickness; Etching this first photoresistance pattern and partial insulative layer form the different insulating barrier of thickness; Deposit one second metal level and one second photoresist layer successively on the residue insulating barrier; Utilize one second light shield that this second photoresist layer is exposed, and this second photoresist layer that develops, the second photoresistance pattern formed; Etching by part second metal level of this second photoresistance pattern covers, does not form a metal pattern; Remove this second photoresistance pattern, wherein, the different transparent area corresponding position of these two light transmittances forms two electric capacity respectively, these two electric capacity include this first metal layer, this metal pattern and be clipped in this first metal layer and this metal pattern between this insulating barrier, and this thickness of insulating layer difference of these two electric capacity.
Compared to prior art, this method for producing capacitor is to come the control capacitance value by the thickness of controlling insulating barrier, do not need to increase the first metal layer of electric capacity and the corresponding area of metal pattern, thereby this method for producing capacitor can overcome prior art and increases the harmful effect that capacitance brings by the corresponding area that increases this first metal layer and metal pattern.
[description of drawings]
Fig. 1 is the flow chart of prior art method for producing capacitor.
Fig. 2 to Figure 10 is the schematic diagram of each step of Fig. 1 method for producing capacitor.
Figure 11 is the flow chart of method for producing capacitor one better embodiment of the present invention.
Fig. 8 to Figure 20 is the schematic diagram of each step of method for producing capacitor shown in Figure 11.
[embodiment]
Seeing also Figure 11, is the flow chart of method for producing capacitor one better embodiment of the present invention, and this method for producing capacitor comprises twice light shield processing procedure, and its concrete steps are as follows::
One, the first road light shield processing procedure
Step S1, one substrate 20 is provided, this substrate 20 can be insulation materials such as glass, quartz or pottery, utilize physical vapour deposition (PVD) (PhysicalVapor Deposition, PVD), chemical vapour deposition (CVD) (Chemical VaporDeposition, CVD) or spin-coating deposition (Spin Coating, SC) mode deposits a first metal layer 21 and makes its patterning (figure does not show) on this substrate 20, on this first metal layer 21, deposit an insulating barrier 22 and one first photoresist layer 23 then successively, as shown in figure 12.This first metal layer 21 can be metal materials such as silver, aluminium or aluminium neodymium alloy, and this insulating barrier 22 can be silica (SiO x) or silicon nitride (Si xN y).
Step S2 provides one first light shield 24, and it has a predetermined pattern, comprises a light tight district 241, one first semi-opaque region 243, one second semi-opaque region 244 and two transparent areas 242.This light tight district 241, first semi-opaque region 243 and second semi-opaque region 244 are provided with at interval by this transparent area 242 respectively, and this first semi-opaque region 243 has a plurality of identical slits (not label).This second semi-opaque region 244 also has a plurality of identical slits (not label), and the slit of this second semi-opaque region 244 is wideer than the slit of this first semi-opaque region 243, as shown in figure 13.The light transmittance in this light tight district 241 is 0.The light transmittance of this transparent area 242 is 1.The light transmittance of this first semi-opaque region 243 and second semi-opaque region 244 all is between 0 to 1, and the light transmittance of this first semi-opaque region 243 is less than the light transmittance of this second semi-opaque region 244.
Step S3, this first light shield 24 is placed this first photoresist layer, 23 tops, with UV-irradiation, make the photoresistance of first semi-opaque region 243, second semi-opaque region 244 and transparent area 242 correspondences of this first light shield 24 that photoresponse partly take place, then the photoresistance that photoresponse takes place is partly developed, and then on this first photoresist layer 23, form this predetermined pattern.As shown in figure 14, the photoresistance of transparent area 242 correspondences of this first light shield 24 partly is developed liquid and washes off, exposes partial insulative layer 22.The photoresistance of the light tight district 241 of this first light shield 24, first semi-opaque region 243 and second semi-opaque region, 244 correspondences partly forms the different first photoresistance pattern (not label) of thickness.This first photoresistance pattern comprises first's photoresistance 231, a second portion photoresistance 232 and a third part photoresistance 233.The not sensitization of photoresistance of light tight district 241 correspondences of this first light shield 24, thereby form the first photoresistance 231 identical with these first photoresist layer, 23 thickness.All part sensitization of photoresistance of first semi-opaque region 243 of this first light shield 24 and second semi-opaque region, 244 correspondences, thereby formation is than the second portion photoresistance 232 and the third part photoresistance 233 of these first photoresist layer, 23 thin thickness.The light transmittance of this first semi-opaque region 243 is littler than the light transmittance of second semi-opaque region 244, make the photoresistance part sensitization degree of depth of these second semi-opaque region, 244 correspondences of photoresistance part sensitization depth ratio of these first semi-opaque region, 243 correspondences little, thereby the thickness of this second portion photoresistance 232 is bigger than the thickness of third part photoresistance 233.
Step S4, this first photoresistance pattern of etching and not by the insulating barrier 22 of this first photoresistance pattern covers, etched intact until this first's photoresistance 231.As shown in figure 15, this predetermined pattern is transferred to this insulating barrier 22.This etching mode can utilize O for dry ecthing (Dry Etching) 3With CF 4Mist as etch material, O wherein 3Gas weight percentage greater than CF 4Weight hundred sides ratio.When this etching mode also can be for wet etching (Wet Etching), utilize stripper, HF and NH 4F three's mixed solution is as etch material, and wherein the percentage by weight of stripper is greater than HF and NH 4The percentage by weight of F solution.The main component of stripper be monoethanolamine (Monoethanolamine, MEA), the diformazan Asia (Dimethylsulfoxide, DMSO) and water, wherein the second ammonium accounts for 60-70%, the diformazan Asia accounts for 25-30%, water accounts for 2-15%.
Two, the second road light shield processing procedure
Step S5 deposits one second metal level 25, one second photoresist layer 26, as shown in figure 16 successively on this insulating barrier 22.This second metal level 25 can be metal materials such as silver, aluminium or aluminium neodymium alloy.
Step S6 provides one second light shield 27, and its pattern is identical with this first light shield 24, comprises a plurality of light tight districts 271 and a plurality of transparent area 272.This light tight district 271 is provided with at interval with this transparent area 272, and this light tight district 271 is corresponding to light tight district 241, first semi-opaque region 243 and second semi-opaque region 244 of this first light shield 24, this transparent area 272 is corresponding to the transparent area 242 of this first light shield 24, as shown in figure 17.This second light shield 27 is placed this second photoresist layer, 26 tops, with UV-irradiation, make the photoresistance of transparent area 272 correspondences of this second light shield 27 that photoresponse partly take place, then the photoresistance that photoresponse takes place is partly developed, remove the photoresistance part that photoresponse takes place, and then on this second photoresist layer 26, form this predetermined pattern, promptly form the second photoresistance pattern 261 as shown in figure 18.
Step S7 is this second metal level 25 of shade etching with this second photoresistance pattern 261, and this etching mode can be wet etching, can utilize HF and NH 4The mixed solution of F is as etch material, and is not etched by the metal part of these second photoresistance pattern, 261 coverings as shown in figure 19, the metal pattern 251 that residue is covered by this second photoresistance pattern 261.
Step S8 removes this second photoresistance pattern 261, utilizes acetone or methyl ethyl ketone (Methylethylketone).
Through above-mentioned steps, the light tight district 241 of this first light shield 24, first semi-opaque region 243 and second semi-opaque region 244 be corresponding respectively to form 280,281,282 3 electric capacity, and these three electric capacity all comprise this first metal layer 21, metal pattern 251 and are sandwiched in therebetween insulating barrier 22.The capacitance of these three electric capacity 280,281,282 is calculated by following formula:
C ST = ϵ · A d
Wherein, C STThe expression capacitance, ε represents to be positioned at the dielectric constant of this insulating barrier 22, and A represents the corresponding area of this first metal layer 21 and metal pattern 251, and d represents the thickness of this insulating barrier 22.Therefore, capacitance C STBe directly proportional with the corresponding area A of this first metal layer 21 and metal pattern 251, be inversely proportional to thickness d.
At these three electric capacity 280,281, in 282 manufacture processes, because the light tight district 241 of this first light shield 24, first semi-opaque region 243 is different with the light transmittance of second semi-opaque region 244, make this first's photoresistance 231 after the UV-irradiation, second portion photoresistance 232 is different with the thickness of third part photoresistance 233, and then make these three electric capacity 280 after the etching, 281, the thickness d difference of 282 insulating barrier, reach the purpose of control capacitance value, thereby this method for producing capacitor can overcome the harmful effect that prior art comes the control capacitance value to be brought by the corresponding area A of controlling this first metal layer 21 and metal pattern 251.
It is described that method for producing capacitor of the present invention is not limited to above execution mode, as: the semi-opaque region of this first light shield is not limited to one first semi-opaque region and one second semi-opaque region, it can comprise the semi-opaque region that more light transmittances have nothing in common with each other, and the width of the slit of this semi-opaque region can be gradually wide or gradually narrow setting; This first light shield is transparent area invariably, also can comprise a plurality of light tight districts.

Claims (10)

1. method for producing capacitor, it comprises the steps:
A., one substrate is provided, deposits a first metal layer, an insulating barrier and one first photoresist layer successively;
B., one first light shield is provided, it comprises two transparent areas that light transmittance is different, and the light transmittance of this transparent area utilizes this first light shield to this first photoresist layer exposure more than or equal to 0 and less than 1, and this first photoresist layer that develops, form the first different photoresistance pattern of thickness;
C. this first photoresistance pattern and partial insulative layer of etching forms the different insulating barrier of thickness;
D. deposit one second metal level and one second photoresist layer successively on the residue insulating barrier;
E. utilize one second light shield that this second photoresist layer is exposed, and this second photoresist layer that develops, the second photoresistance pattern formed;
F. etching by part second metal level of this second photoresistance pattern covers, does not form a metal pattern; With
G. remove this second photoresistance pattern,
Wherein, the different transparent area corresponding position of these two light transmittances forms two electric capacity respectively, these two electric capacity include this first metal layer, this metal pattern and be clipped in this first metal layer and this metal pattern between this insulating barrier, and this thickness of insulating layer difference of these two electric capacity.
2. method for producing capacitor as claimed in claim 1 is characterized in that: this first light shield comprises that further a light transmittance is 1 full transparent area.
3. method for producing capacitor as claimed in claim 2 is characterized in that: this second light shield comprises that a light transmittance is that a light tight district of 0 and a light transmittance are 1 full transparent area.
4. method for producing capacitor as claimed in claim 3, it is characterized in that: the full transparent area of this second light shield is 1 full transparent area corresponding to the light transmittance of this first light shield, the light tight district of this second light shield corresponding to the light transmittance of this first light shield less than 1 transparent area.
5. method for producing capacitor as claimed in claim 1, it is characterized in that: the light transmittance of this first light shield is greater than 0 and be respectively one first semi-opaque region and one second semi-opaque region less than 1 transparent area, this first semi-opaque region and this second semi-opaque region include a plurality of slits, and the light transmittance of this first semi-opaque region is less than the light transmittance of this second semi-opaque region.
6. method for producing capacitor as claimed in claim 5 is characterized in that: a plurality of slits of this first semi-opaque region are identical, and a plurality of slits of this second semi-opaque region are identical, and the slit of this second semi-opaque region is wideer than the slit of this first semi-opaque region.
7. method for producing capacitor as claimed in claim 1 is characterized in that: step a further is included in after this first metal layer of deposition, makes this first metal layer patterning.
8. method for producing capacitor as claimed in claim 1 is characterized in that: the etching mode of step c is dry ecthing, and etch material is O 3With CF 4Mist, O 3Gas weight percentage greater than CF 4Percentage by weight.
9. method for producing capacitor as claimed in claim 1 is characterized in that: the etching mode of step c is a wet etching, and etch material is stripper, HF and NH 4F three's mixed solution, the percentage by weight of stripper is greater than HF and NH 4The percentage by weight of F solution.
10. method for producing capacitor as claimed in claim 1 is characterized in that: the etching mode of step f is a wet etching, and etch material is HF and NH 4The mixed solution of F.
CN 200510121258 2005-12-25 2005-12-25 Method for producing capacitor Expired - Fee Related CN1988077B (en)

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CN1988077B true CN1988077B (en) 2011-08-03

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104485287B (en) * 2014-12-08 2017-04-26 江苏东晨电子科技有限公司 Preparation method of novel QFN (Quad Flat No Lead) frame comprising overflow groove
CN112060746A (en) * 2020-09-14 2020-12-11 信利光电股份有限公司 Method for attaching curved surface cover plate

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1130801A (en) * 1994-12-09 1996-09-11 美国电报电话公司 Method for making capacitor
CN1148731A (en) * 1995-02-27 1997-04-30 现代电子产业株式会社 Method for production of capacitor of semiconductor device
CN1379461A (en) * 2001-03-30 2002-11-13 华邦电子股份有限公司 Double-embedding technology for internal connection line structure
CN1664685A (en) * 2005-04-22 2005-09-07 友达光电股份有限公司 Method of manufacturing array substrate and thin film transistor array panel

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1130801A (en) * 1994-12-09 1996-09-11 美国电报电话公司 Method for making capacitor
CN1148731A (en) * 1995-02-27 1997-04-30 现代电子产业株式会社 Method for production of capacitor of semiconductor device
CN1379461A (en) * 2001-03-30 2002-11-13 华邦电子股份有限公司 Double-embedding technology for internal connection line structure
CN1664685A (en) * 2005-04-22 2005-09-07 友达光电股份有限公司 Method of manufacturing array substrate and thin film transistor array panel

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Address before: 518109 Longhua, Shenzhen, town, Foxconn science and Technology Industrial Park E District, building 1, floor 4,

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