CN1983620A - 有机薄膜晶体管阵列面板 - Google Patents
有机薄膜晶体管阵列面板 Download PDFInfo
- Publication number
- CN1983620A CN1983620A CNA2006101382935A CN200610138293A CN1983620A CN 1983620 A CN1983620 A CN 1983620A CN A2006101382935 A CNA2006101382935 A CN A2006101382935A CN 200610138293 A CN200610138293 A CN 200610138293A CN 1983620 A CN1983620 A CN 1983620A
- Authority
- CN
- China
- Prior art keywords
- film transistor
- thin
- display panel
- electrode
- transistor display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 62
- 239000012212 insulator Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 45
- 238000003860 storage Methods 0.000 claims description 24
- 239000010408 film Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 238000002161 passivation Methods 0.000 claims description 13
- 239000011229 interlayer Substances 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 238000007641 inkjet printing Methods 0.000 claims description 5
- 239000011368 organic material Substances 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 2
- 239000002195 soluble material Substances 0.000 claims description 2
- 238000005192 partition Methods 0.000 abstract 1
- 235000008429 bread Nutrition 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- VPUGDVKSAQVFFS-UHFFFAOYSA-N coronene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3)C4=C4C3=CC=C(C=C3)C4=C2C3=C1 VPUGDVKSAQVFFS-UHFFFAOYSA-N 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229930192474 thiophene Natural products 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- MZYHMUONCNKCHE-UHFFFAOYSA-N naphthalene-1,2,3,4-tetracarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=C(C(O)=O)C(C(O)=O)=C21 MZYHMUONCNKCHE-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- -1 silicon nitrides Chemical class 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 150000003577 thiophenes Chemical class 0.000 description 1
- WHLUQAYNVOGZST-UHFFFAOYSA-N tifenamil Chemical group C=1C=CC=CC=1C(C(=O)SCCN(CC)CC)C1=CC=CC=C1 WHLUQAYNVOGZST-UHFFFAOYSA-N 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
- G02F1/13685—Top gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050123385A KR20070063300A (ko) | 2005-12-14 | 2005-12-14 | 유기 박막 트랜지스터 표시판 및 그 제조 방법 |
KR10-2005-0123385 | 2005-12-14 | ||
KR1020050123385 | 2005-12-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1983620A true CN1983620A (zh) | 2007-06-20 |
CN1983620B CN1983620B (zh) | 2010-09-29 |
Family
ID=38165993
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006101382935A Expired - Fee Related CN1983620B (zh) | 2005-12-14 | 2006-11-10 | 有机薄膜晶体管阵列面板 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20070152558A1 (zh) |
JP (1) | JP4999440B2 (zh) |
KR (1) | KR20070063300A (zh) |
CN (1) | CN1983620B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102646792A (zh) * | 2011-05-18 | 2012-08-22 | 京东方科技集团股份有限公司 | 有机薄膜晶体管阵列基板及其制备方法 |
WO2013159538A1 (zh) * | 2012-04-24 | 2013-10-31 | 京东方科技集团股份有限公司 | 有机薄膜晶体管阵列基板及其制备方法以及显示装置 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101326129B1 (ko) * | 2007-07-24 | 2013-11-06 | 삼성디스플레이 주식회사 | 유기 박막 트랜지스터 표시판 및 그 제조 방법 |
JP5205894B2 (ja) * | 2007-09-21 | 2013-06-05 | 大日本印刷株式会社 | 有機半導体素子、有機半導体素子の製造方法、有機トランジスタアレイ、およびディスプレイ |
JP5256676B2 (ja) * | 2007-09-21 | 2013-08-07 | 大日本印刷株式会社 | 有機半導体素子、有機半導体素子の製造方法、有機トランジスタアレイ、およびディスプレイ |
KR20090037725A (ko) * | 2007-10-12 | 2009-04-16 | 삼성전자주식회사 | 박막트랜지스터 기판, 그 제조 방법 및 이를 갖는 표시장치 |
WO2009078809A1 (en) * | 2007-12-18 | 2009-06-25 | Michalewicz Marek T | Quantum tunneling photodetector array |
KR101678670B1 (ko) | 2010-01-22 | 2016-12-07 | 삼성전자주식회사 | 박막트랜지스터 및 어레이 박막트랜지스터의 제조방법 |
KR101724064B1 (ko) | 2010-02-18 | 2017-04-10 | 삼성전자주식회사 | 전도성 탄소나노튜브-금속 복합체 잉크 |
KR101286526B1 (ko) * | 2012-01-20 | 2013-07-19 | 동아대학교 산학협력단 | 박막 트랜지스터 및 그의 제조 방법 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04111323A (ja) * | 1990-08-30 | 1992-04-13 | Stanley Electric Co Ltd | 薄膜トランジスタの製造方法 |
US6262784B1 (en) * | 1993-06-01 | 2001-07-17 | Samsung Electronics Co., Ltd | Active matrix display devices having improved opening and contrast ratios and methods of forming same and a storage electrode line |
JP4664501B2 (ja) * | 1998-04-10 | 2011-04-06 | イー インク コーポレイション | 有機系電界効果トランジスタを用いる電子ディスプレイ |
TW410478B (en) * | 1998-05-29 | 2000-11-01 | Lucent Technologies Inc | Thin-film transistor monolithically integrated with an organic light-emitting diode |
US6842657B1 (en) * | 1999-04-09 | 2005-01-11 | E Ink Corporation | Reactive formation of dielectric layers and protection of organic layers in organic semiconductor device fabrication |
KR100437475B1 (ko) * | 2001-04-13 | 2004-06-23 | 삼성에스디아이 주식회사 | 평판 디스플레이 장치용 표시 소자 제조 방법 |
JP5187994B2 (ja) * | 2001-05-10 | 2013-04-24 | ティーピーオー ホンコン ホールディング リミテッド | 薄膜トランジスタの製造方法並びにそのような製造方法を用いて製造された薄膜トランジスタ及び液晶表示パネル |
JP4841751B2 (ja) * | 2001-06-01 | 2011-12-21 | 株式会社半導体エネルギー研究所 | 有機半導体装置及びその作製方法 |
JP2003258256A (ja) * | 2002-02-27 | 2003-09-12 | Konica Corp | 有機tft装置及びその製造方法 |
JP3581354B2 (ja) * | 2002-03-27 | 2004-10-27 | 株式会社東芝 | 電界効果トランジスタ |
CN1144301C (zh) * | 2002-04-05 | 2004-03-31 | 中国科学院长春应用化学研究所 | 一种有机薄膜晶体管开关器件及制作方法 |
KR100456151B1 (ko) * | 2002-04-17 | 2004-11-09 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
TWI255432B (en) * | 2002-06-03 | 2006-05-21 | Lg Philips Lcd Co Ltd | Active matrix organic electroluminescent display device and fabricating method thereof |
US6946677B2 (en) * | 2002-06-14 | 2005-09-20 | Nokia Corporation | Pre-patterned substrate for organic thin film transistor structures and circuits and related method for making same |
JP4618990B2 (ja) * | 2002-08-02 | 2011-01-26 | 株式会社半導体エネルギー研究所 | 有機薄膜トランジスタ及びその作製方法、並びに有機薄膜トランジスタを有する半導体装置 |
EP1434282A3 (en) * | 2002-12-26 | 2007-06-27 | Konica Minolta Holdings, Inc. | Protective layer for an organic thin-film transistor |
KR100973811B1 (ko) * | 2003-08-28 | 2010-08-03 | 삼성전자주식회사 | 유기 반도체를 사용한 박막 트랜지스터 표시판 및 그 제조방법 |
-
2005
- 2005-12-14 KR KR1020050123385A patent/KR20070063300A/ko not_active Application Discontinuation
-
2006
- 2006-11-10 CN CN2006101382935A patent/CN1983620B/zh not_active Expired - Fee Related
- 2006-12-13 JP JP2006335538A patent/JP4999440B2/ja not_active Expired - Fee Related
- 2006-12-13 US US11/639,202 patent/US20070152558A1/en not_active Abandoned
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102646792A (zh) * | 2011-05-18 | 2012-08-22 | 京东方科技集团股份有限公司 | 有机薄膜晶体管阵列基板及其制备方法 |
WO2013159538A1 (zh) * | 2012-04-24 | 2013-10-31 | 京东方科技集团股份有限公司 | 有机薄膜晶体管阵列基板及其制备方法以及显示装置 |
US9281353B2 (en) | 2012-04-24 | 2016-03-08 | Boe Technology Group Co., Ltd. | Organic thin film transistor array substrate, method for manufacturing the same and display device |
Also Published As
Publication number | Publication date |
---|---|
CN1983620B (zh) | 2010-09-29 |
KR20070063300A (ko) | 2007-06-19 |
US20070152558A1 (en) | 2007-07-05 |
JP4999440B2 (ja) | 2012-08-15 |
JP2007164191A (ja) | 2007-06-28 |
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