CN1963645A - LCD Structure of thin film transistor - Google Patents
LCD Structure of thin film transistor Download PDFInfo
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- CN1963645A CN1963645A CN 200610144199 CN200610144199A CN1963645A CN 1963645 A CN1963645 A CN 1963645A CN 200610144199 CN200610144199 CN 200610144199 CN 200610144199 A CN200610144199 A CN 200610144199A CN 1963645 A CN1963645 A CN 1963645A
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Abstract
This invention discloses one film transistor LCD structure, which comprises the following parts: one film transducer array baseboard and color filter baseboard, column pad set between two baseboards, wherein, the film transducer array baseboard comprises one panel with column pad object at film array baseboard transducer leakage electrode, data scanning line and grating scan lines; the bottom end is on color filter slice and leakage of film transducer, data scan line and grating scan line relative positions.
Description
Technical field
The present invention relates to TFT LCD (Thin Film Transistor-LCD) structure, relate in particular to the TFT LCD structure of a kind of cylindrical spacer position and structural change.
Background technology
In flat panel display, TFT LCD has characteristics low in energy consumption, that manufacturing cost is relatively low and radiationless, has therefore occupied leading position in flat panel display market.TFT LCD device be by array glass substrate and colored filter glass substrate to box, inject liquid crystal therein and form.To keep box thick usually making cylindrical spacer on the colorized optical filtering sheet glass pole plate.
As shown in Figure 1a, be a kind of typical in the prior art to the TFT LCD structural representation behind the box.One group of controlling grid scan line 1 and parallel with it public electrode lead-in wire 12 are arranged on the Array of this TFT LCD (array) substrate, and one group of vertical with it data scanning line 5.Adjacent controlling grid scan line and data scanning line have defined pixel region.Each pixel packets contains a TFT switching device, transparent pixels electrode 10, twice shield bars 11 and part public electrode 12.Shown in Fig. 2 a, the color resin of forming by black matrix 14 and redgreenblue on the colored filter substrate of this TFT LCD 15, each color resin is corresponding to a pixel.On the distance of at interval or several resins, be evenly distributed with cylindrical spacer 13.The cylindrical spacer present position is corresponding to the top of TFT switching device.
Shown in Fig. 1 b, the TFT device is made up of gate electrode 2, gate insulator 4, semiconductor active layer 3 and source electrode 6 and drain electrode 7.Transparent pixels electrode 10 is connected with the drain electrode 7 of TFT by the via hole 9 of passivation layer 8.The top of cylindrical spacer 13 and TFT device joint.As can be seen, in traditional TFT LCD device, because the contact position of cylindrical spacer and TFT substrate is in TFT device top, belong to the highest position in the TFT substrate, when panel was squeezed or impact, chock insulator matter can move from the trend lower position, and be difficult to be returned to original position, thereby can cause light leak, this bad phenomenon has had a strong impact on the yields of liquid crystal panel, and display effect is caused harmful effect.
Summary of the invention
The objective of the invention is defective at prior art, a kind of LCD Structure of thin film transistor is provided, by change to colored filter glass substrate pixel region shape and chock insulator matter position and shape, chock insulator matter is placed the encirclement of TFT device, generation end is poor around making it, thereby form a kind of metastable structure, solve TFT LCD panel be squeezed, when impacting, because the mobile light leak that causes of chock insulator matter position.
To achieve these goals, the invention provides a kind of LCD Structure of thin film transistor, comprise: a thin-film transistor array base-plate and colored filter substrate, column shaped spacer is arranged between this colored filter substrate and this film thin-film transistor array base-plate, wherein said thin-film transistor array base-plate comprises a panel, is formed on a controlling grid scan line and data scanning line, controlling grid scan line line and data scanning line intersection definition one pixel region on the panel, and each pixel region comprises a film transistor device, a pixel electrode; Wherein said colored filter substrate comprises a panel, is formed on one on the panel black matrix, a pixel color resin and a cylindrical spacer, wherein said column shaped spacer top is the zone between drain electrode, data scanning line and the controlling grid scan line of the thin film transistor (TFT) of thin-film transistor array base-plate, and the bottom is at regional correspondence position on the colored filter and between the drain electrode of thin film transistor (TFT), data scanning line and the controlling grid scan line.
In the such scheme, described pixel region also comprises a shield bars, and the end that shield bars is positioned at the column shaped spacer bottom end vicinity is to the drain electrode direction bending near thin film transistor (TFT), and the column shaped spacer bottom is between the bending part and controlling grid scan line of shield bars; The shield bars bending angle is preferably 90 degree; Shield bars bending part length is 1-60 μ m, does not touch drain electrode simultaneously, and the inflection point is 1-60 μ m apart from the gated sweep linear distance.The top width of described cylindrical spacer is 1-40 μ m, and the bottom width is 1-80 μ m.The side view of described cylindrical spacer is trapezoidal; Top and bottom are shaped as circle, quadrilateral or other polygon.
In the such scheme, the zone can also form a via hole between the drain electrode of the thin film transistor (TFT) at the place, top of described cylindrical spacer, data scanning line and the controlling grid scan line, and the column shaped spacer top is positioned at via hole.Described via bottom can reserve part passivation layer and insulation course or reserve part insulation course or removal fully.The described hole width of crossing is greater than the cylindrical spacer top width, simultaneously less than distance between drain electrode and the data scanning line and the distance between controlling grid scan line and the shield bars.
In the prior art, because the zone of cylindrical spacer and TFT substrate contacts is positioned at the peak of whole TFT structure, when panel was squeezed or impact, chock insulator matter can move from the trend lower position, and was difficult to be returned to original position, thereby can cause light leak.The present invention has carried out displacement to cylindrical spacer, changed the position of cylindrical spacer, make it be in the minimum point of whole TFT structure: after to box, the position of cylindrical spacer is between array device drain electrode and the data scanning line, between controlling grid scan line and the shield bars.The distance on cylindrical spacer distance four limits will be considered the requirement of aligning accuracy, is complementary with actual aligning accuracy.This design can guarantee cylindrical spacer can not exceed four limits when being subjected to impacting displacement restriction, guarantees that promptly maximum displacement in the scope of aligning accuracy, can not produce light leak.
Below in conjunction with the drawings and specific embodiments the present invention is further illustrated in more detail.
Description of drawings
Fig. 1 a is the vertical view of TFT LCD of the prior art;
Fig. 1 b is along the cross-sectional view of A-A ' among Fig. 1 a;
Fig. 2 a is the colored filter synoptic diagram of TFT LCD correspondence among Fig. 1 a;
Fig. 2 b is along the cross-sectional view of B-B ' among Fig. 2 a;
The vertical view of Fig. 3 a TFT LCD of the present invention;
Fig. 3 b is the cross-sectional view of one embodiment of the invention along C-C ' position among Fig. 3 a;
Fig. 3 c is the present invention one embodiment along among Fig. 3 a along the cross-sectional view at D-D ' position;
Fig. 4 a is the colored filter synoptic diagram of TFT LCD correspondence among Fig. 3 a;
Fig. 4 b is along the cross-sectional view of E-E ' among Fig. 4 a;
Fig. 5 is the TFT LCD array base palte vertical view after first mask technology of the present invention: grid, public electrode and shield bars pattern;
Fig. 6 a is the cross-sectional view of another embodiment of the present invention along C-C ' position among Fig. 3 a;
Fig. 6 b is the cross-sectional view of another embodiment of the present invention along D-D ' position among Fig. 3 a;
Fig. 7 a is the TFT LCD array base palte vertical view after another embodiment of the present invention passivation layer deposition;
Fig. 7 b is along the cross-sectional view of F-F ' among Fig. 7 a;
Fig. 7 c is along the cross-sectional view of G-G ' among Fig. 7 a;
Fig. 8 a is the TFT LCD array base palte vertical view after another embodiment of the present invention via etch;
Fig. 8 b is along the cross-sectional view of H-H ' among Fig. 8 a;
Fig. 8 c is along the cross-sectional view of I-I ' among Fig. 8 a.
Mark among the figure: 1, controlling grid scan line; 2, gate electrode; 3, active layer; 4, gate insulator; 5, data scanning line; 6, source electrode; 7, drain electrode; 8, passivation layer; 9, via hole; 10, transparent pixels electrode; 11, shield bars; 12, public electrode; 13, cylindrical spacer; 14, black matrix; 15, color resin; 16, the via hole of cylindrical spacer position.
Embodiment
Specific embodiment 1:
TFT LCD structure of the present invention, comprise: colored filter substrate and thin-film transistor array base-plate, liquid crystal layer is packaged between colored filter substrate and the film thin-film transistor array base-plate, and column shaped spacer is provided with between colored filter substrate and the film thin-film transistor array base-plate, and is thick with the box of keeping between the panel.
Fig. 3 a be depicted as specific embodiment of the invention TFT LCD to the vertical view behind the box, one group of controlling grid scan line 1 and parallel with it public electrode 12 are wherein arranged, and one group of vertical with it data scanning line 5 on the thin-film transistor array base-plate.Adjacent controlling grid scan line and data scanning line have defined pixel region.Each pixel packets contains a TFT switching device, transparent pixels electrode 10, twice shield bars 11 and part public electrode 12.Shown in Fig. 3 c, the TFT device is made up of gate electrode 2, gate insulator 4, semiconductor active layer 3 and source electrode 6 and drain electrode 7.Transparent pixels electrode 10 is connected with the drain electrode 7 of TFT by the via hole 9 of passivation layer 8.Identical with top with a kind of traditional TFT LCD array base-plate structure.
TFT LCD array base-plate structure difference of the present invention is, the shape of the shield bars 11 of cylindrical spacer position on the array base palte is changed, bend to the drain electrode direction at cylindrical spacer 13 upper ends, bending angle is preferably 90 degree, bending part length is 1-60 μ m, simultaneously do not touch drain electrode, the inflection point is 1-60 μ m apart from the gated sweep linear distance.So that it better plays the effect that the restriction cylindrical spacer moves.This change can be carried out or do not carried out in non-cylindrical spacer position.
Handle if do not carry out this bending fully, then can only (drain electrode, data scanning line, controlling grid scan line) limit moving of cylindrical spacer, but also can reach effect preferably, so be also contained in the content of the present invention on three limits.
Simultaneously, change the position of cylindrical spacer 13, it is between drain electrode 7 and the data scanning line 5, between shield bars 11 and the controlling grid scan line 1.Simultaneously,, keep stability, the shape of cylindrical spacer can be changed platform shape by the cylindrical side of changing in order to allow the cylindrical spacer after being shifted can contacting of maximum area be arranged with border all around, or other polygon shape.Because the contact position of cylindrical spacer and TFT substrate changes, in order to keep same box thickness, needing increases the height of cylindrical spacer, and added value is identical with the end difference of TFT.
At Fig. 3 b, as can be seen, in C-C ' direction, cylindrical spacer is between controlling grid scan line and the shield bars among the 3c.In D-D ' direction, cylindrical spacer is between drain electrode and the data scanning line.All exist the end of 2000-10000 poor at four direction, the height of cylindrical spacer itself is 2-4 μ m, is equivalent to 20000-40000 .The distance on cylindrical spacer distance four limits will be considered the requirement of aligning accuracy, is complementary about 1-10 μ m with actual aligning accuracy.
Colored filter substrate structure of the present invention is shown in Fig. 4 a (vertical view) and Fig. 4 b (sectional view), and it includes: colored filter panel (glass substrate); Black matrix 14; Color resin 15 (red, green, indigo plant) and cylindrical spacer 13; Compare with traditional colored filter dot structure (shown in Fig. 2 a and Fig. 2 b), colored filter substrate structure of the present invention has following difference: the position that has changed cylindrical spacer 13, after to box, the position of cylindrical spacer is between the drain electrode and data scanning line of the thin film transistor (TFT) on the array base palte, between controlling grid scan line and the shield bars.Simultaneously, for array base palte on the position of cylindrical spacer be complementary, changed the shape in pixel openings district.
Above-mentioned TFT LCD structure is a kind of typical structure of the present invention, so long as the position of cylindrical spacer is moved between drain electrode 7 and the data scanning line 5, between shield bars 11 and the controlling grid scan line 1, the dot structure of other shape and pattern can be arranged also, meet the scope of the invention.
The array base palte of above-mentioned TFT LCD structure can be by following method manufacturing.
At first, use magnetically controlled sputter method, preparation one layer thickness is at the grid metallic film of 1000 to 7000 on glass substrate.As shown in Figure 5, with the gate mask version by exposure technology and chemical etching technology, on certain zone of glass substrate, form the pattern of controlling grid scan line 1 and gate electrode 2 and public electrode 12 and shield bars 11, this step forms the shield bars 11 of column shaped spacer correspondence position, bend inwards in the position near follow-up formation drain electrode, bending angle is preferably 90 degree.
Then, the method for utilizing chemical vapor deposition deposit 1000 amorphous silicon membrane on array base palte to the gate insulator layer film of 6000 and 1000 to 6000 .With the mask of the active layer back of exposing amorphous silicon is carried out etching, form the silicon island.And the insulation course between grid metal and the amorphous silicon plays the effect that stops etching.
Subsequently, adopt and the grid metal species like the preparation method, the thickness that deposit one deck is similar to the grid metal on array base palte at 1000 to 7000 metallic films.Mask by source-drain electrode forms data scanning line 5 and source electrode 6, drain electrode 7 in certain zone.Source electrode 6 and drain electrode 7 contact with the two ends of active layer respectively.
Next, with and prepare gate insulator and the similar method of active layer, on whole array base palte, deposit a layer thickness at the passivation layer 8 of 1000 to 6000 .By the mask of passivation layer, utilize exposure and etching technics to form the passivation layer via hole 9 of drain electrode part.
At last, use the mask of transparency electrode,, form transparent pixels electrode 10 by above-mentioned identical processing step.Transparent pixels electrode commonly used is ITO, and thickness is between 100 to 1000 .TFT dot structure planimetric map of Xing Chenging and sectional view can be referring to Fig. 3 a at last, Fig. 3 c.
Specific embodiment 2:
In specific embodiment 1, the pixel electrode of cylindrical spacer top contact is on passivation layer, as Fig. 3 b, shown in the 3c, in specific embodiment 2, method by the etching via hole is removed passivation layer and gate insulator, and the pixel electrode of cylindrical spacer top contact is on glass substrate, shown in Fig. 6 a and Fig. 6 b.There is the certain slope angle at the via hole place, and size is the 20-90 degree.The advantage of this design is that the end that has increased around the cylindrical spacer is poor, has better limited moving of cylindrical spacer.Corresponding this kind design, for keep with specific embodiment 1 in identical box thick, needing increases the height of cylindrical spacer, the thickness of added value and passivation layer and gate insulator with equate.Certainly, crossing hole depth also can be less than " passivation layer and gate insulation layer thickness sum ", that is: passivation layer and gate insulator can partly be removed.
The array base palte of above-mentioned TFT LCD structure can be by following method manufacturing.
Use identical preparation method in the specific embodiment 1, the preparation active layer, source-drain layer and passivation layer, the TFT structure that these steps finish is shown in Fig. 7 a, and the sectional view of cylindrical spacer present position such as Fig. 7 b are shown in Fig. 7 c.By the mask of passivation layer, utilize exposure and etching technics to form the passivation layer via hole 9 of drain electrode part and the via hole 16 of cylindrical spacer position, shown in Fig. 8 a, Fig. 8 b and Fig. 8 c.Because the selectivity of etching, etching promptly finished after the passivation layer of drain electrode part was carved and removed, and still can continue downward etching after the passivation layer of cylindrical spacer position is carved and removed, till gate insulator is etched fully.At last, the deposit transparent pixel electrode layer, the mask of use transparent pixels electrode forms transparent pixels electrode 10.Transparency electrode commonly used is ITO, and thickness is between 100 to 1000 .
The above embodiment that proposes is typical implementation method, and other implementation method also can be arranged, and finishes by selecting different materials or combination of materials.On array base palte, the TFT device architecture obviously can have various modifications and variations, on colored filter substrate, and the quantity of cylindrical spacer and whether be suitable for additional chock insulator matter and obviously also various modifications and variations can be arranged.And these modifications and variations are also within the scope of the present invention involved.
It should be noted that at last, above embodiment is only unrestricted in order to technical scheme of the present invention to be described, although the present invention is had been described in detail with reference to preferred embodiment, those of ordinary skill in the art should can use different materials and equipment to realize it as required, promptly can make amendment or be equal to replacement, and not break away from the spirit and scope of technical solution of the present invention technical scheme of the present invention.
Claims (9)
1, a kind of LCD Structure of thin film transistor, comprise: a thin-film transistor array base-plate and colored filter substrate, column shaped spacer is arranged between this colored filter substrate and this film thin-film transistor array base-plate, wherein said thin-film transistor array base-plate comprises a panel, is formed on a controlling grid scan line and data scanning line, controlling grid scan line line and data scanning line intersection definition one pixel region on the panel, and each pixel region comprises a film transistor device, a pixel electrode; Wherein said colored filter substrate comprises a panel, is formed on one on the panel black matrix, a pixel color resin and a cylindrical spacer, it is characterized in that: described column shaped spacer top is the zone between drain electrode, data scanning line and the controlling grid scan line of the thin film transistor (TFT) of thin-film transistor array base-plate, and the bottom is at regional correspondence position on the colored filter and between the drain electrode of thin film transistor (TFT), data scanning line and the controlling grid scan line.
2, LCD Structure of thin film transistor according to claim 1, it is characterized in that: described pixel region also comprises a shield bars, and shield bars is positioned at an end of column shaped spacer bottom end vicinity to the drain electrode direction bending near thin film transistor (TFT), and the column shaped spacer bottom is between the bending part and controlling grid scan line of shield bars.
3, tft liquid crystal device structure according to claim 2 is characterized in that: the bending angle of described shield bars is 90 degree.
4, LCD Structure of thin film transistor according to claim 3 is characterized in that: the bending part length of described shield bars is 1-60 μ m, does not touch drain electrode simultaneously, and the inflection point is 1-60 μ m apart from the gated sweep linear distance.
5, according to the arbitrary described LCD Structure of thin film transistor of claim 1 to 4, it is characterized in that: the top width of described cylindrical spacer is 1-40 μ m, and the bottom width is 1-80 μ m.
6, according to the arbitrary described LCD Structure of thin film transistor of claim 1 to 4, it is characterized in that: the side view of described cylindrical spacer is trapezoidal; Top and bottom are shaped as circle, quadrilateral or polygon.
7, according to the arbitrary described LCD Structure of thin film transistor of claim 1 to 4, it is characterized in that: the zone is formed with via hole between the drain electrode of the thin film transistor (TFT) at the place, top of described cylindrical spacer, data scanning line and the controlling grid scan line, and the column shaped spacer top is positioned at via hole.
8, LCD Structure of thin film transistor according to claim 7 is characterized in that: described via bottom reserve part passivation layer and insulation course or reserve part insulation course or removal fully.
9, LCD Structure of thin film transistor according to claim 8, it is characterized in that: the described hole width of crossing is greater than the cylindrical spacer top width, simultaneously less than distance between drain electrode and the data scanning line and the distance between controlling grid scan line and the shield bars.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2006101441990A CN100432801C (en) | 2006-11-29 | 2006-11-29 | LCD Structure of thin film transistor |
| US11/947,115 US9052550B2 (en) | 2006-11-29 | 2007-11-29 | Thin film transistor liquid crystal display |
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| CNB2006101441990A CN100432801C (en) | 2006-11-29 | 2006-11-29 | LCD Structure of thin film transistor |
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| CN100432801C CN100432801C (en) | 2008-11-12 |
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Effective date of registration: 20071102 Address after: 100176 No. 8 West Central Road, Beijing economic and Technological Development Zone Applicant after: Beijing BOE Photoelectricity Science & Technology Co., Ltd. Co-applicant after: BOE Technology Group Co., Ltd. Address before: 100016 No. 10, Jiuxianqiao Road, Beijing, Chaoyang District Applicant before: BOE Technology Group Co., Ltd. |
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Effective date of registration: 20201130 Address after: 215200 No. 1700, Wujiang economic and Technological Development Zone, Suzhou, Jiangsu, Zhongshan North Road Patentee after: Gaochuang (Suzhou) Electronics Co.,Ltd. Patentee after: BOE TECHNOLOGY GROUP Co.,Ltd. Address before: 100176 No. 8 West Central Road, Beijing economic and Technological Development Zone Patentee before: BEIJING BOE OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Patentee before: BOE TECHNOLOGY GROUP Co.,Ltd. |