CN102650783A - Display device, TFT-LCD (Thin Film Transistor-Liquid Crystal Display) pixel structure and manufacturing method of TFT-LCD pixel structure - Google Patents
Display device, TFT-LCD (Thin Film Transistor-Liquid Crystal Display) pixel structure and manufacturing method of TFT-LCD pixel structure Download PDFInfo
- Publication number
- CN102650783A CN102650783A CN201110452477XA CN201110452477A CN102650783A CN 102650783 A CN102650783 A CN 102650783A CN 201110452477X A CN201110452477X A CN 201110452477XA CN 201110452477 A CN201110452477 A CN 201110452477A CN 102650783 A CN102650783 A CN 102650783A
- Authority
- CN
- China
- Prior art keywords
- electrode
- layer
- tft
- transparent electrode
- pixel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention relates to the technical field of liquid crystal display, in particular to a display device, a TFT-LCD (Thin Film Transistor-Liquid Crystal Display) pixel structure and a manufacturing method of the TFT-LCD pixel structure. The TFT-LCD pixel structure comprises a base plate, as well as a common electrode, a grid electrode scanning line, a grid electrode, a grid electrode insulating layer, an active layer, a pixel electrode, a source electrode, a drain electrode, a data scanning line, a passivation layer pattern and a second transparent electrode layer formed on the base plate, wherein the second transparent electrode layer covers at the edge of the pixel electrode, passes through through holes oppositely arranged above the grid electrode scanning line to be connected with the grid electrode scanning line, and forms a storage capacitor with the pixel electrode. According to the display device, the TFT-LCD pixel structure and the manufacturing method of the TFT-LCD pixel structure, the charge of the grid electrode scanning line is stored on the second transparent electrode layer and forms a double-storage capacitance structure together with the common electrode and the first transparent electrode layer on the base plate, so that the storage capacitance is increased greatly, and the display quality of an image is improved effectively.
Description
Technical field
The present invention relates to technical field of liquid crystal display, particularly a kind of display device, TFT-LCD dot structure and preparation method thereof.
Background technology
In flat panel display; TFT-LCD (Thin Film Transistor-Liquid Crystal Display; Thin film transistor (TFT)-LCD) has characteristics low in energy consumption, that manufacturing cost is relatively low and radiationless, therefore occupied leading position in flat panel display market.The TFT-LCD device is formed box by array base palte and color membrane substrates.Shown in Fig. 1-3, be the schematic cross-section at the single pixel vertical view of a kind of TFT structure and A-A and B-B position.As shown in the figure, this array base palte comprises: one group of controlling grid scan line 1 ' and one group of vertical with it data scanning line 5 ', adjacent controlling grid scan line 1 ' has defined pixel region with data scanning line 5 '.Each pixel packets contains a TFT switching device, transparent pixels electrode 10 ' and part public electrode 11 '.The TFT device is made up of with drain electrode 7 ' gate electrode 2 ', grid electrode insulating layer 4 ', semiconductor active layer 3 ' and source electrode 6 '.Passivation layer 8 ' covers on the above-mentioned each several part, and forms transpassivation layer via hole 9 ' in drain electrode 7 ' top.Transparent pixels electrode 10 ' is connected with the drain electrode 7 ' of TFT through the via hole 9 ' of passivation layer.Transparent pixels electrode a 10 ' part and controlling grid scan line 1 ' form MM CAP together.In order further to reduce the light leak in the pixel behind the box, the both sides that are parallel to data line in pixel form shield bars 12 '.Shield bars 12 ' uses and the grid same material, in same Mask operation, accomplishes and makes.But distance is bigger between the transparent pixels electrode 10 ' of this structure and public electrode 11 ', and the overlapping area is less, causes its MM CAP less, and the display quality of image is affected.
Summary of the invention
The technical matters that (one) will solve
The technical matters that the present invention will solve provides a kind of display device, TFT-LCD dot structure and preparation method thereof; Via hole through passing gate insulator and passivation layer with the controlling grid scan line charge storage on second transparent electrode layer; With public electrode and the common pair storage capacitor constructions that form of first transparent electrode layer on the substrate; Greatly increase amount of storage capacity, can effectively improve the display quality of image.
(2) technical scheme
In order to address the above problem; The present invention provides a kind of TFT-LCD dot structure on the one hand; Comprise: substrate; Form public electrode, controlling grid scan line, gate electrode, gate insulator, active layer, pixel electrode, source electrode, drain electrode, data scanning line and passivation layer pattern on the said substrate, also comprise second transparent electrode layer, said second transparent electrode layer covers the edge of pixel electrode; Said second transparent electrode layer is connected with controlling grid scan line through the via hole that is oppositely arranged on the controlling grid scan line top, forms MM CAP with pixel electrode.
Further, said public electrode top cover gate insulation course, the top of said gate insulator has pixel electrode and passivation layer successively; Said via hole passes said gate insulator and said passivation layer;
Further, also comprise first transparency electrode, said first transparent electrode layer is connected with public electrode, forms storage capacitors with pixel electrode.
Further, also comprise shield bars, said shield bars is connected with first transparent electrode layer with said public electrode, and it has identical voltage with public electrode.
On the other hand, the present invention also provides a kind of display device, comprises above-mentioned TFT-LCD dot structure.
On the one hand, the present invention also provides a kind of TFT-LCD production method of pixel structure, comprising again:
Step 1: deposit transparent electrode layer and grid metallic film on substrate, adopt composition technology to form first transparent electrode layer, controlling grid scan line, gate electrode and public electrode, said first transparent electrode layer is connected with public electrode;
Step 2: on the substrate of completing steps 1, deposit grid insulating film, active layer film, metal film layer and transparent electrode layer, adopt composition technology to form gate insulator, active layer, data scanning line, source electrode, drain electrode and pixel electrode; Public electrode in said pixel electrode and the step 1 forms MM CAP;
Step 3: on the substrate of completing steps 2, deposit passivation layer, the gate insulator and the passivation layer that will be positioned at the controlling grid scan line top form via hole;
Step 4: on the substrate of completing steps 3; The deposit transparent electrode layer; Adopt composition technology to form second transparent electrode layer, said second transparent electrode layer passes via hole and is connected with controlling grid scan line, and said second transparent electrode layer forms MM CAP through controlling grid scan line and pixel electrode.
Further, also comprise the formation shield bars in the said step 1, said shield bars is connected with first transparent electrode layer with public electrode, and it has the voltage identical with public electrode.
Further, said step 1 specifically comprises:
Step 111: deposit transparent electrode layer on substrate forms first transparent electrode layer after the employing composition technology;
Step 112: deposition grid metallic film on the substrate of completing steps 111, adopt composition technology to form controlling grid scan line, gate electrode, public electrode; First transparent electrode layer in the step 111 is connected with public electrode.
Further, said step 1 specifically comprises:
Successive sedimentation transparent electrode layer and grid metallic film on substrate adopt composition technology to form first transparent electrode layer, controlling grid scan line, gate electrode and public electrode, and said first transparent electrode layer is connected with public electrode.
Further, said step 2 specifically comprises:
Step 211: successive sedimentation grid insulating film and active layer film on the substrate of completing steps 1, adopt composition technology to form gate insulator and active layer;
Step 212: depositing metal films layer and transparent electrode layer on the substrate of completing steps 211; Form data scanning line, source electrode, drain electrode and pixel electrode; Drain electrode is connected with pixel electrode, and the public electrode in said pixel electrode and the step 1 forms MM CAP.
Further, said step 2 specifically comprises:
Step 221: successive sedimentation grid insulating film, active layer film and metal film layer on the substrate of completing steps 1, adopt composition technology to form gate insulator, active layer, data scanning line, source electrode and drain electrode;
Step 222: deposit transparent electrode layer on the substrate of completing steps 221, adopt composition technology to form pixel electrode, the public electrode in said pixel electrode and the step 1 forms MM CAP.
(3) beneficial effect
The technical matters that the present invention will solve provides a kind of display device, TFT-LCD dot structure and preparation method thereof; Via hole through passing gate insulator and passivation layer with the controlling grid scan line charge storage on second transparent electrode layer; With public electrode and the common pair storage capacitor constructions that form of first transparent electrode layer on the substrate; Greatly increase amount of storage capacity, can effectively improve the display quality of image.
Description of drawings
Fig. 1 is a prior art TFT-LCD dot structure synoptic diagram;
Fig. 2 is a prior art TFT-LCD dot structure A-A sectional view;
Fig. 3 is a prior art TFT-LCD dot structure B-B sectional view;
Fig. 4 is an embodiment of the invention TFT-LCD dot structure synoptic diagram;
Fig. 5 is an embodiment of the invention TFT-LCD dot structure A-A sectional view;
Fig. 6 is an embodiment of the invention TFT-LCD dot structure B-B sectional view.
Among the figure: 1, first transparent electrode layer; 2, public electrode; 3, controlling grid scan line; 4, gate insulator; 5, active layer; 6, passivation layer; 7, pixel electrode; 8, source electrode; 9, drain electrode; 11, shield bars; 12, second transparent electrode layer; 13, data scanning line; 14, via hole.
Embodiment
Below in conjunction with accompanying drawing and embodiment, specific embodiments of the invention describes in further detail.Following examples are used to explain the present invention, but are not used for limiting scope of the present invention.
Show like Fig. 4-6; Embodiment of the invention TFT-LCD dot structure; Comprise: substrate; Form public electrode 2, controlling grid scan line 3, gate electrode, gate insulator 4, active layer 5, pixel electrode 7, source electrode 8, drain electrode 9, data scanning line 13 and passivation layer 6 patterns on the substrate respectively, also comprise second transparent electrode layer 12.Source electrode 8 links to each other with the two ends of active layer 5 respectively with drain electrode 9, and drain electrode 9 is connected with pixel electrode 7, these public electrode 2 top cover gate insulation courses 4, and the top of gate insulator 4 has pixel electrode 7 and passivation layer 6 successively; Via hole 14 passes gate insulator 4 and passivation layer 6.
Second transparent electrode layer 12 covers the edge of pixel electrode 7, in plane projection, has intersection area with pixel electrode 7.It is connected with controlling grid scan line 3 through the via hole 14 that is oppositely arranged on controlling grid scan line 3 tops, forms MM CAP with pixel electrode 7, further strengthens the memory space of electric capacity.This TFT-LCD dot structure also comprises first transparency electrode 1 and shield bars 11, and this first transparency electrode 1 is connected with public electrode 2, forms storage capacitors with pixel electrode 7, further strengthens the memory space of electric capacity.It has identical voltage with public electrode 2.Shield bars 11 is connected with first transparent electrode layer 1 with public electrode 2, and it has identical voltage with public electrode 2, can play the effect of blocking, and prevents the liquid crystal light leak.
Need to prove; The structure of thin film transistor (TFT) also can adopt existing other structures among the present invention; On the structure of existing thin film transistor (TFT), set up second transparent electrode layer, guarantee that second transparent electrode layer forms MM CAP with pixel electrode, can further improve the memory space of electric capacity.
Embodiment of the invention TFT-LCD production method of pixel structure specifically comprises the steps:
Step 1: deposit transparent electrode layer and grid metallic film on substrate, adopt composition technology to form first transparent electrode layer, controlling grid scan line, gate electrode and public electrode, first transparent electrode layer is connected with public electrode.
Concrete technology comprises the steps:
Step 111: use magnetically controlled sputter method, deposit transparent electrode layer on substrate forms first transparent electrode layer after the employing composition technology; This composition technology comprises: exposure, development, etching, peel off final formation pattern.Wherein, between the preferred 100-1000 dust of the thickness of this first transparent electrode layer.
Step 112: use magnetically controlled sputter method, the deposition preferred thickness adopts composition technology to form controlling grid scan line, gate electrode, public electrode, shield bars at the grid metallic film of 1000-7000 dust on the substrate of completing steps 111; First transparent electrode layer in the step 111 is connected with public electrode.Wherein, the grid metallic film can adopt metals such as molybdenum, aluminium, alumel, molybdenum and tungsten alloy, chromium or copper, also can use the combination material of above-mentioned several kinds of metals.This shield bars is connected with first transparent electrode layer with public electrode, and it has the voltage identical with public electrode, can play the effect of blocking, and prevents the liquid crystal light leak.
Perhaps, step 1 also can be employed in successive sedimentation transparent electrode layer and grid metallic film on the substrate, through common first transparent electrode layer, controlling grid scan line, gate electrode and the public electrode of forming of composition technology, this first transparent electrode layer is connected with public electrode.
Step 2: on the substrate of completing steps 1, deposit grid insulating film, active layer film, metal film layer and transparent electrode layer, adopt composition technology to form gate insulator, active layer, data scanning line, source electrode, drain electrode and pixel electrode.Wherein the active layer film specifically can adopt amorphous silicon membrane, and the source electrode links to each other with the two ends of active layer respectively with drain electrode, and drain electrode is connected with pixel electrode, and the public electrode in pixel electrode and the step 1 forms MM CAP.
Technology in this step 2 specifically comprises the steps:
Step 211: adopt chemical vapor deposition method successive sedimentation thickness on the substrate of completing steps 1 to be preferably the grid insulating film of 1000-6000 dust and the active layer film of 1000-6000 dust, adopt composition technology to form gate insulator and active layer.Wherein, grid insulating film is silicon nitride, monox or silicon oxynitride, and the active layer film is an amorphous silicon membrane.
Step 212: deposit thickness is preferably the metal film layer of 1000-7000 dust and the transparent pixels electrode layer of 100-1000 dust on the substrate of completing steps 211; Form data scanning line, source electrode, drain electrode and pixel electrode; The source electrode links to each other with the two ends of active layer respectively with drain electrode; Drain electrode is connected with pixel electrode, and the public electrode in pixel electrode and the step 1 forms MM CAP.Wherein data scanning line, source electrode and drain electrode have identical thickness and the corrosion after the angle of gradient.
Perhaps, the technology in this step 2 comprises the steps:
Step 221: adopt chemical vapor deposition method its thickness of successive sedimentation on the substrate of completing steps 1 to be preferably the grid insulating film of 1000-6000 dust, the amorphous silicon membrane of 1000-6000 dust and the metal film layer of 1000-7000 dust thickness; Adopt composition technology to form gate insulator, active layer, data scanning line, source electrode and drain electrode, this source electrode links to each other with the two ends of active layer respectively with drain electrode;
Step 222: deposit thickness is preferably the transparent pixels electrode layer of 100-1000 dust on the substrate of completing steps 221; Form pixel electrode through composition technology; This pixel electrode links to each other with drain electrode, and the public electrode in this pixel electrode and the step 1 forms MM CAP.
Step 3: adopt chemical vapor deposition method on the substrate of completing steps 2, deposit thickness is preferably the passivation layer of 1000-6000 dust, and the material of passivation layer is silicon nitride or silicon dioxide.At this moment, controlling grid scan line and cover gate insulation course and passivation layer above the public electrode, and data scanning line and be coated with the passivation layer of same thickness above the pixel electrode.
The gate insulator and the passivation layer that will be positioned at the controlling grid scan line top form via hole.
Step 4: on the substrate of completing steps 3; The deposit transparent electrode layer; Adopt composition technology to use the mask of transparency electrode to form second transparent electrode layer, second transparent electrode layer passes via hole and is connected with controlling grid scan line, and pixel electrode and controlling grid scan line form MM CAP.Transparent pixels electrode layer among the present invention can adopt ITO (Indium Tin Oxides, tin indium oxide) or IZO (Indium-doped Zinc Oxide mixes indium zinc paste) to process.
Need to prove; The TFT-LCD production method of pixel structure of foregoing description; Be preferred version; This method for making is accomplished in the lump to form between second transparency electrode and the pixel electrode to form between MM CAP and pixel electrode and the public electrode between MM CAP, first transparency electrode and the pixel electrode and is formed MM CAP, has farthest greatly increased amount of storage capacity, effectively improves the display quality of image
TFT-LCD dot structure provided by the invention and preparation method thereof; Via hole through passing gate insulator and passivation layer with the controlling grid scan line charge storage on second transparent electrode layer; With public electrode and the common pair storage capacitor constructions that form of first transparent electrode layer on the substrate; Greatly increase amount of storage capacity, can effectively improve the display quality of image.
In addition, the present invention also provides a kind of display device, comprises the TFT-LCD dot structure of foregoing description, and this display device comprises but the equipment such as LCD, LCD TV, computer, LCDs that are limited to without cease.
Display device provided by the invention; The via hole that the TFT-LCD dot structure that it adopts passes gate insulator and passivation layer with the controlling grid scan line charge storage on second transparent electrode layer; With public electrode and the common pair storage capacitor constructions that form of first transparent electrode layer on the substrate; Greatly increase amount of storage capacity, can effectively improve the display quality of image.
Above embodiment only is used to explain the present invention; And be not limitation of the present invention; The those of ordinary skill in relevant technologies field under the situation that does not break away from the spirit and scope of the present invention, can also be made various variations and modification; Therefore all technical schemes that are equal to also belong to category of the present invention, and scope of patent protection of the present invention should be defined by the claims.
Claims (11)
1. TFT-LCD dot structure; Comprise: substrate; Form public electrode, controlling grid scan line, gate electrode, gate insulator, active layer, pixel electrode, source electrode, drain electrode, data scanning line and passivation layer pattern on the said substrate; It is characterized in that also comprise second transparent electrode layer, said second transparent electrode layer covers the edge of pixel electrode; Said second transparent electrode layer is connected with controlling grid scan line through the via hole that is oppositely arranged on the controlling grid scan line top, forms MM CAP with pixel electrode.
2. TFT-LCD dot structure as claimed in claim 1 is characterized in that, said public electrode top cover gate insulation course, and the top of said gate insulator has pixel electrode and passivation layer successively; Said via hole passes said gate insulator and said passivation layer;
3. TFT-LCD dot structure as claimed in claim 1 is characterized in that, also comprises first transparency electrode, and said first transparent electrode layer is connected with public electrode, forms storage capacitors with pixel electrode.
4. TFT-LCD dot structure as claimed in claim 3 is characterized in that, also comprises shield bars, and said shield bars is connected with first transparent electrode layer with said public electrode, and it has identical voltage with public electrode.
5. a display device is characterized in that, comprises using each described TFT-LCD dot structure of claim 1-4.
6. a TFT-LCD production method of pixel structure is characterized in that, comprising:
Step 1: deposit transparent electrode layer and grid metallic film on substrate, adopt composition technology to form first transparent electrode layer, controlling grid scan line, gate electrode and public electrode, said first transparent electrode layer is connected with public electrode;
Step 2: on the substrate of completing steps 1, deposit grid insulating film, active layer film, metal film layer and transparent electrode layer, adopt composition technology to form gate insulator, active layer, data scanning line, source electrode, drain electrode and pixel electrode; Public electrode in said pixel electrode and the step 1 forms MM CAP;
Step 3: on the substrate of completing steps 2, deposit passivation layer, the gate insulator and the passivation layer that will be positioned at the controlling grid scan line top form via hole;
Step 4: on the substrate of completing steps 3; The deposit transparent electrode layer; Adopt composition technology to form second transparent electrode layer, said second transparent electrode layer passes via hole and is connected with controlling grid scan line, and said second transparent electrode layer forms MM CAP through controlling grid scan line and pixel electrode.
7. TFT-LCD production method of pixel structure as claimed in claim 6 is characterized in that, also comprises the formation shield bars in the said step 1, and said shield bars is connected with first transparent electrode layer with public electrode, and it has the voltage identical with public electrode.
8. TFT-LCD production method of pixel structure as claimed in claim 6 is characterized in that, said step 1 specifically comprises:
Step 111: deposit transparent electrode layer on substrate forms first transparent electrode layer after the employing composition technology;
Step 112: deposition grid metallic film on the substrate of completing steps 111, adopt composition technology to form controlling grid scan line, gate electrode, public electrode; First transparent electrode layer in the step 111 is connected with public electrode.
9. TFT-LCD production method of pixel structure as claimed in claim 6 is characterized in that, said step 1 specifically comprises:
Successive sedimentation transparent electrode layer and grid metallic film on substrate adopt composition technology to form first transparent electrode layer, controlling grid scan line, gate electrode and public electrode, and said first transparent electrode layer is connected with public electrode.
10. TFT-LCD production method of pixel structure as claimed in claim 6 is characterized in that, said step 2 specifically comprises:
Step 211: successive sedimentation grid insulating film and active layer film on the substrate of completing steps 1, adopt composition technology to form gate insulator and active layer;
Step 212: depositing metal films layer and transparent electrode layer on the substrate of completing steps 211; Form data scanning line, source electrode, drain electrode and pixel electrode; Drain electrode is connected with pixel electrode, and the public electrode in said pixel electrode and the step 1 forms MM CAP.
11. TFT-LCD production method of pixel structure as claimed in claim 6 is characterized in that, said step 2 specifically comprises:
Step 221: successive sedimentation grid insulating film, active layer film and metal film layer on the substrate of completing steps 1, adopt composition technology to form gate insulator, active layer, data scanning line, source electrode and drain electrode;
Step 222: deposit transparent electrode layer on the substrate of completing steps 221, adopt composition technology to form pixel electrode, the public electrode in said pixel electrode and the step 1 forms MM CAP.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110452477XA CN102650783A (en) | 2011-12-29 | 2011-12-29 | Display device, TFT-LCD (Thin Film Transistor-Liquid Crystal Display) pixel structure and manufacturing method of TFT-LCD pixel structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110452477XA CN102650783A (en) | 2011-12-29 | 2011-12-29 | Display device, TFT-LCD (Thin Film Transistor-Liquid Crystal Display) pixel structure and manufacturing method of TFT-LCD pixel structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102650783A true CN102650783A (en) | 2012-08-29 |
Family
ID=46692812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110452477XA Pending CN102650783A (en) | 2011-12-29 | 2011-12-29 | Display device, TFT-LCD (Thin Film Transistor-Liquid Crystal Display) pixel structure and manufacturing method of TFT-LCD pixel structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102650783A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103116235A (en) * | 2013-03-11 | 2013-05-22 | 华映视讯（吴江）有限公司 | Pixel array basal plate and display panel |
| CN103219475A (en) * | 2013-04-02 | 2013-07-24 | 华映视讯（吴江）有限公司 | Method for manufacturing electroluminescent device and method for manufacturing electrode substrate of electroluminescent device |
| CN104658472A (en) * | 2013-11-15 | 2015-05-27 | 乐金显示有限公司 | Organic light emitting display device |
| WO2015123915A1 (en) * | 2014-02-24 | 2015-08-27 | 京东方科技集团股份有限公司 | Active matrix organic light-emitting diode array substrate, manufacturing method and display device |
| CN106802521A (en) * | 2017-03-31 | 2017-06-06 | 深圳市华星光电技术有限公司 | Dot structure, array base palte and liquid crystal display panel |
| CN108922896A (en) * | 2018-07-24 | 2018-11-30 | 信利半导体有限公司 | A kind of dot structure and preparation method thereof, array substrate and TN type display panel |
| CN110568644A (en) * | 2019-07-24 | 2019-12-13 | 福建华佳彩有限公司 | GIP capacitor structure and manufacturing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03267921A (en) * | 1990-03-19 | 1991-11-28 | Fujitsu Ltd | Thin-film transistor matrix |
| CN1702530A (en) * | 2004-05-27 | 2005-11-30 | Lg.菲利浦Lcd株式会社 | Liquid crystal display device and fabricating method thereof |
| CN1987624A (en) * | 2006-11-17 | 2007-06-27 | 京东方科技集团股份有限公司 | TFT LCD array base board structure and its producing method |
-
2011
- 2011-12-29 CN CN201110452477XA patent/CN102650783A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03267921A (en) * | 1990-03-19 | 1991-11-28 | Fujitsu Ltd | Thin-film transistor matrix |
| CN1702530A (en) * | 2004-05-27 | 2005-11-30 | Lg.菲利浦Lcd株式会社 | Liquid crystal display device and fabricating method thereof |
| CN1987624A (en) * | 2006-11-17 | 2007-06-27 | 京东方科技集团股份有限公司 | TFT LCD array base board structure and its producing method |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103116235A (en) * | 2013-03-11 | 2013-05-22 | 华映视讯（吴江）有限公司 | Pixel array basal plate and display panel |
| CN103116235B (en) * | 2013-03-11 | 2015-08-05 | 华映视讯（吴江）有限公司 | Image element array substrates and display panel |
| CN103219475A (en) * | 2013-04-02 | 2013-07-24 | 华映视讯（吴江）有限公司 | Method for manufacturing electroluminescent device and method for manufacturing electrode substrate of electroluminescent device |
| CN103219475B (en) * | 2013-04-02 | 2015-08-26 | 华映视讯（吴江）有限公司 | The manufacture method of el light emitting device and the manufacture method of electrode base board thereof |
| CN104658472A (en) * | 2013-11-15 | 2015-05-27 | 乐金显示有限公司 | Organic light emitting display device |
| CN104658472B (en) * | 2013-11-15 | 2017-12-05 | 乐金显示有限公司 | Organic light-emitting display device |
| WO2015123915A1 (en) * | 2014-02-24 | 2015-08-27 | 京东方科技集团股份有限公司 | Active matrix organic light-emitting diode array substrate, manufacturing method and display device |
| US9385171B2 (en) | 2014-02-24 | 2016-07-05 | Boe Technology Group Co., Ltd. | Active matrix organic light-emitting diode array substrate, manufacturing method thereof and display device including the same |
| CN106802521A (en) * | 2017-03-31 | 2017-06-06 | 深圳市华星光电技术有限公司 | Dot structure, array base palte and liquid crystal display panel |
| CN108922896A (en) * | 2018-07-24 | 2018-11-30 | 信利半导体有限公司 | A kind of dot structure and preparation method thereof, array substrate and TN type display panel |
| CN110568644A (en) * | 2019-07-24 | 2019-12-13 | 福建华佳彩有限公司 | GIP capacitor structure and manufacturing method |
| CN110568644B (en) * | 2019-07-24 | 2022-04-22 | 福建华佳彩有限公司 | GIP capacitor structure and manufacturing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102955312B (en) | Array substrate and manufacture method thereof and display device | |
| CN103268878B (en) | The manufacture method of tft array substrate, tft array substrate and display unit | |
| CN102645803B (en) | Pixel unit, array substrate, liquid crystal panel, display device and manufacturing methods thereof | |
| CN102629585B (en) | Display device, thin film transistor, array substrate and manufacturing method thereof | |
| CN102956713B (en) | A kind of thin-film transistor and preparation method thereof, array base palte and display unit | |
| CN101807583B (en) | TFT-LCD (Thin Film Transistor Liquid Crystal Display) array substrate and manufacture method thereof | |
| CN102881688B (en) | Array substrate, display panel and array substrate manufacturing method | |
| CN202033562U (en) | Liquid crystal display array base plate | |
| CN102650783A (en) | Display device, TFT-LCD (Thin Film Transistor-Liquid Crystal Display) pixel structure and manufacturing method of TFT-LCD pixel structure | |
| CN101819363A (en) | TFT-LCD (Thin Film Transistor Liquid Crystal Display) array substrate and manufacture method thereof | |
| US9281325B2 (en) | Array substrate, manufacturing method thereof and display device | |
| CN102629054A (en) | TFT (Thin Film Transistor) array substrate, manufacturing method of TFT array substrate and display device | |
| CN101799603B (en) | TFT-LCD array substrate and manufacture method thereof | |
| CN103178119A (en) | Array substrate, method for preparing array substrate and display device | |
| CN102629584A (en) | Array substrate and manufacturing method thereof and display device | |
| CN102929060A (en) | Array substrate, fabrication method of array substrate, and display device | |
| CN105093756A (en) | Liquid crystal display pixel structure and manufacturing method thereof | |
| CN104779203A (en) | Array substrate and manufacturing method thereof and display device | |
| CN103163704B (en) | Dot structure, array base palte and manufacture method thereof | |
| CN102956715B (en) | TFT (Thin Film Transistor), manufacturing method thereof, array substrate and display device | |
| CN102709235B (en) | Array base board as well as manufacturing method and display device thereof | |
| CN105870132A (en) | TFT (thin film transistor) array substrate and manufacturing method therefor | |
| CN101666949B (en) | IPS type TFT-LCD array substrate and manufacturing method thereof | |
| CN101819361B (en) | TFT-LCD (Thin Film Transistor Liquid Crystal Display) array substrate and manufacture method thereof | |
| CN102280443B (en) | Structure of array substrate and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120829 |