CN1956205A - 传感器位置随空间变化的象素 - Google Patents
传感器位置随空间变化的象素 Download PDFInfo
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- CN1956205A CN1956205A CNA2006101507131A CN200610150713A CN1956205A CN 1956205 A CN1956205 A CN 1956205A CN A2006101507131 A CNA2006101507131 A CN A2006101507131A CN 200610150713 A CN200610150713 A CN 200610150713A CN 1956205 A CN1956205 A CN 1956205A
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Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (21)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/256,743 | 2005-10-24 | ||
US11/256,743 US7432491B2 (en) | 2005-05-06 | 2005-10-24 | Pixel with spatially varying sensor positions |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1956205A true CN1956205A (zh) | 2007-05-02 |
CN1956205B CN1956205B (zh) | 2011-02-02 |
Family
ID=37491307
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006101507131A Active CN1956205B (zh) | 2005-10-24 | 2006-10-24 | 具有位置随空间变化的象素的图像传感器及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7432491B2 (zh) |
JP (1) | JP2007123876A (zh) |
CN (1) | CN1956205B (zh) |
DE (1) | DE102006049565A1 (zh) |
GB (1) | GB2432045A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111584528A (zh) * | 2019-02-15 | 2020-08-25 | 台湾积体电路制造股份有限公司 | 图像传感器及形成图像传感器的方法 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4193874B2 (ja) * | 2006-05-25 | 2008-12-10 | ソニー株式会社 | 固体撮像装置とその製造方法、及びカメラモジュール |
JP4956084B2 (ja) | 2006-08-01 | 2012-06-20 | キヤノン株式会社 | 光電変換装置及びそれを用いた撮像システム |
JP2008282961A (ja) * | 2007-05-10 | 2008-11-20 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
US8085391B2 (en) * | 2007-08-02 | 2011-12-27 | Aptina Imaging Corporation | Integrated optical characteristic measurements in a CMOS image sensor |
JP5173496B2 (ja) * | 2008-03-06 | 2013-04-03 | キヤノン株式会社 | 撮像装置及び撮像システム |
US20090302323A1 (en) * | 2008-06-04 | 2009-12-10 | Micron Technology, Inc. | Method and apparatus for providing a low-level interconnect section in an imager device |
JP5029624B2 (ja) * | 2009-01-15 | 2012-09-19 | ソニー株式会社 | 固体撮像装置及び電子機器 |
JP5971106B2 (ja) | 2012-12-17 | 2016-08-17 | 株式会社デンソー | 光センサ |
JP2015029012A (ja) * | 2013-07-30 | 2015-02-12 | ソニー株式会社 | 撮像素子および電子機器 |
JP6148580B2 (ja) * | 2013-09-03 | 2017-06-14 | キヤノン株式会社 | 撮像装置及びカメラ |
KR102149772B1 (ko) | 2013-11-14 | 2020-08-31 | 삼성전자주식회사 | 이미지 센서 및 이를 제조하는 방법 |
JPWO2016129109A1 (ja) * | 2015-02-13 | 2017-11-24 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2903812B2 (ja) | 1991-12-10 | 1999-06-14 | 日本電気株式会社 | 固体撮像装置 |
US5841126A (en) | 1994-01-28 | 1998-11-24 | California Institute Of Technology | CMOS active pixel sensor type imaging system on a chip |
US6456326B2 (en) | 1994-01-28 | 2002-09-24 | California Institute Of Technology | Single chip camera device having double sampling operation |
US5471515A (en) | 1994-01-28 | 1995-11-28 | California Institute Of Technology | Active pixel sensor with intra-pixel charge transfer |
US5576763A (en) | 1994-11-22 | 1996-11-19 | Lucent Technologies Inc. | Single-polysilicon CMOS active pixel |
WO1996029621A1 (en) | 1995-03-17 | 1996-09-26 | Massachusetts Institute Of Technology | Metallodielectric photonic crystal |
EP0883187A1 (en) | 1997-06-04 | 1998-12-09 | Interuniversitair Micro-Elektronica Centrum Vzw | A detector for electromagnetic radiation, pixel structure with high sensitivity using such detector and method of manufacturing such detector |
US5920345A (en) | 1997-06-02 | 1999-07-06 | Sarnoff Corporation | CMOS image sensor with improved fill factor |
US6107655A (en) | 1997-08-15 | 2000-08-22 | Eastman Kodak Company | Active pixel image sensor with shared amplifier read-out |
US6057586A (en) | 1997-09-26 | 2000-05-02 | Intel Corporation | Method and apparatus for employing a light shield to modulate pixel color responsivity |
US6194770B1 (en) | 1998-03-16 | 2001-02-27 | Photon Vision Systems Llc | Photo receptor with reduced noise |
US6278169B1 (en) | 1998-05-07 | 2001-08-21 | Analog Devices, Inc. | Image sensor shielding |
JP3164069B2 (ja) | 1998-07-21 | 2001-05-08 | 日本電気株式会社 | 固体撮像装置 |
US6466266B1 (en) | 1998-07-28 | 2002-10-15 | Eastman Kodak Company | Active pixel sensor with shared row timing signals |
KR100401265B1 (ko) * | 1998-12-04 | 2004-03-20 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터형 광 감지소자 |
US6288434B1 (en) | 1999-05-14 | 2001-09-11 | Tower Semiconductor, Ltd. | Photodetecting integrated circuits with low cross talk |
US6376868B1 (en) | 1999-06-15 | 2002-04-23 | Micron Technology, Inc. | Multi-layered gate for a CMOS imager |
US6171885B1 (en) * | 1999-10-12 | 2001-01-09 | Taiwan Semiconductor Manufacturing Company | High efficiency color filter process for semiconductor array imaging devices |
US6995800B2 (en) | 2000-01-27 | 2006-02-07 | Canon Kabushiki Kaisha | Image pickup apparatus utilizing a plurality of converging lenses |
KR100533166B1 (ko) | 2000-08-18 | 2005-12-02 | 매그나칩 반도체 유한회사 | 마이크로렌즈 보호용 저온산화막을 갖는 씨모스이미지센서및 그 제조방법 |
US7248297B2 (en) | 2001-11-30 | 2007-07-24 | The Board Of Trustees Of The Leland Stanford Junior University | Integrated color pixel (ICP) |
US6815787B1 (en) | 2002-01-08 | 2004-11-09 | Taiwan Semiconductor Manufacturing Company | Grid metal design for large density CMOS image sensor |
JP4221940B2 (ja) | 2002-03-13 | 2009-02-12 | ソニー株式会社 | 固体撮像素子及び固体撮像装置並びに撮像システム |
US6838715B1 (en) * | 2002-04-30 | 2005-01-04 | Ess Technology, Inc. | CMOS image sensor arrangement with reduced pixel light shadowing |
US7227573B2 (en) * | 2002-07-29 | 2007-06-05 | Hewlett-Packard Development Company, L.P. | Apparatus and method for improved-resolution digital zoom in an electronic imaging device |
US6777662B2 (en) | 2002-07-30 | 2004-08-17 | Freescale Semiconductor, Inc. | System, circuit and method providing a dynamic range pixel cell with blooming protection |
JP3795846B2 (ja) | 2002-08-29 | 2006-07-12 | 富士通株式会社 | 半導体装置 |
US7420231B2 (en) * | 2002-09-20 | 2008-09-02 | Sony Corporation | Solid state imaging pick-up device and method of manufacturing the same |
US6861686B2 (en) | 2003-01-16 | 2005-03-01 | Samsung Electronics Co., Ltd. | Structure of a CMOS image sensor and method for fabricating the same |
JP3709873B2 (ja) | 2003-02-19 | 2005-10-26 | ソニー株式会社 | 固体撮像装置及び撮像カメラ |
US7616855B2 (en) | 2004-11-15 | 2009-11-10 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Integrated waveguide and method for designing integrated waveguide |
JP4793042B2 (ja) | 2005-03-24 | 2011-10-12 | ソニー株式会社 | 固体撮像素子及び撮像装置 |
US7214920B2 (en) | 2005-05-06 | 2007-05-08 | Micron Technology, Inc. | Pixel with spatially varying metal route positions |
-
2005
- 2005-10-24 US US11/256,743 patent/US7432491B2/en active Active
-
2006
- 2006-10-11 GB GB0620151A patent/GB2432045A/en not_active Withdrawn
- 2006-10-20 DE DE102006049565A patent/DE102006049565A1/de not_active Withdrawn
- 2006-10-20 JP JP2006286416A patent/JP2007123876A/ja not_active Withdrawn
- 2006-10-24 CN CN2006101507131A patent/CN1956205B/zh active Active
-
2008
- 2008-09-02 US US12/202,666 patent/US7728271B2/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111584528A (zh) * | 2019-02-15 | 2020-08-25 | 台湾积体电路制造股份有限公司 | 图像传感器及形成图像传感器的方法 |
CN111584528B (zh) * | 2019-02-15 | 2023-04-18 | 台湾积体电路制造股份有限公司 | 图像传感器及形成图像传感器的方法 |
Also Published As
Publication number | Publication date |
---|---|
US7728271B2 (en) | 2010-06-01 |
CN1956205B (zh) | 2011-02-02 |
GB0620151D0 (en) | 2006-11-22 |
GB2432045A (en) | 2007-05-09 |
US20090057537A1 (en) | 2009-03-05 |
JP2007123876A (ja) | 2007-05-17 |
US7432491B2 (en) | 2008-10-07 |
DE102006049565A1 (de) | 2007-04-26 |
GB2432045A8 (en) | 2007-11-14 |
US20060249654A1 (en) | 2006-11-09 |
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Effective date of registration: 20090327 Address after: Labuan Island, Malaysia Applicant after: Avagot Technology Holdings (Labuan) company image Address before: Singapore Singapore Applicant before: Anwar High-Tech Sensor IP Pte. Ltd. Effective date of registration: 20090327 Address after: Idaho Applicant after: Micron Technology, Inc. Address before: Labuan Malaysia Applicant before: Avagot Technology Holdings (Labuan) company image |
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Owner name: AVAGO TECHNOLOGY IMAGE HOLDINGS (LABUAN) CORPORATI Free format text: FORMER OWNER: AVAGO TECHNOLOGIES SENSOR IP PRIVATE LTD Effective date: 20090327 Owner name: MICRON TECHNOLOGY INC. Free format text: FORMER OWNER: AVAGO TECHNOLOGY IMAGE HOLDINGS (LABUAN) CORPORATION Effective date: 20090327 |
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