CN1956199A - 半导体结构及其制造方法 - Google Patents
半导体结构及其制造方法 Download PDFInfo
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- CN1956199A CN1956199A CNA2006101265132A CN200610126513A CN1956199A CN 1956199 A CN1956199 A CN 1956199A CN A2006101265132 A CNA2006101265132 A CN A2006101265132A CN 200610126513 A CN200610126513 A CN 200610126513A CN 1956199 A CN1956199 A CN 1956199A
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- semiconductor layer
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 260
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 90
- 239000000758 substrate Substances 0.000 claims abstract description 90
- 239000000203 mixture Substances 0.000 claims description 111
- 239000000463 material Substances 0.000 claims description 65
- 238000003475 lamination Methods 0.000 claims description 40
- 238000009940 knitting Methods 0.000 claims description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 239000012212 insulator Substances 0.000 claims description 13
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 229910000927 Ge alloy Inorganic materials 0.000 claims description 2
- 238000003780 insertion Methods 0.000 claims 1
- 230000037431 insertion Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 7
- 238000010030 laminating Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 191
- 229920002120 photoresistant polymer Polymers 0.000 description 17
- 239000003989 dielectric material Substances 0.000 description 13
- 230000005669 field effect Effects 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 9
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 8
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 8
- 239000000126 substance Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 4
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005094 computer simulation Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 125000006850 spacer group Chemical class 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 101150064138 MAP1 gene Proteins 0.000 description 1
- 229910002064 alloy oxide Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- BOIGHUSRADNYQR-UHFFFAOYSA-N aluminum;lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Al+3].[La+3] BOIGHUSRADNYQR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
- H01L27/1207—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/163,652 US7696574B2 (en) | 2005-10-26 | 2005-10-26 | Semiconductor substrate with multiple crystallographic orientations |
US11/163,652 | 2005-10-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1956199A true CN1956199A (zh) | 2007-05-02 |
CN1956199B CN1956199B (zh) | 2011-09-07 |
Family
ID=37984557
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006101265132A Expired - Fee Related CN1956199B (zh) | 2005-10-26 | 2006-08-25 | 半导体结构及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7696574B2 (zh) |
JP (1) | JP2007123892A (zh) |
CN (1) | CN1956199B (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102569198A (zh) * | 2010-12-21 | 2012-07-11 | 格罗方德半导体公司 | 藉由氮化物硬掩膜层及氧化物掩膜形成信道半导体合金 |
CN102738163A (zh) * | 2012-07-16 | 2012-10-17 | 西安电子科技大学 | 一种双多晶SiGe HBT混合晶面BiCMOS集成器件及制备方法 |
CN102751292A (zh) * | 2012-07-16 | 2012-10-24 | 西安电子科技大学 | 一种基于三多晶SiGe HBT的混合晶面应变BiCMOS集成器件及制备方法 |
CN103563068A (zh) * | 2011-06-10 | 2014-02-05 | 住友化学株式会社 | 半导体器件、半导体基板、半导体基板的制造方法及半导体器件的制造方法 |
CN103563069A (zh) * | 2011-06-10 | 2014-02-05 | 住友化学株式会社 | 半导体器件、半导体基板、半导体基板的制造方法及半导体器件的制造方法 |
CN104241336A (zh) * | 2013-06-10 | 2014-12-24 | 格罗方德半导体公司 | 包含具有应力通道区的晶体管的设备及其形成方法 |
CN105845678A (zh) * | 2015-01-30 | 2016-08-10 | 国际商业机器公司 | 形成半导体结构的方法及其半导体结构 |
Families Citing this family (21)
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US7199451B2 (en) * | 2004-09-30 | 2007-04-03 | Intel Corporation | Growing [110] silicon on [001]-oriented substrate with rare-earth oxide buffer film |
US7385257B2 (en) * | 2006-04-26 | 2008-06-10 | International Business Machines Corporation | Hybrid orientation SOI substrates, and method for forming the same |
JP5268305B2 (ja) * | 2007-08-24 | 2013-08-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP5255801B2 (ja) * | 2007-09-07 | 2013-08-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
EP2238615B1 (en) * | 2008-01-28 | 2011-08-24 | Nxp B.V. | A method for fabricating a dual-orientation group-iv semiconductor substrate |
US8211786B2 (en) * | 2008-02-28 | 2012-07-03 | International Business Machines Corporation | CMOS structure including non-planar hybrid orientation substrate with planar gate electrodes and method for fabrication |
FR2929444B1 (fr) * | 2008-03-31 | 2010-08-20 | Commissariat Energie Atomique | Procede de fabrication d'une structure micro-electronique du type a semi-conducteur sur isolant et a motifs differencies, et structure ainsi obtenue. |
DE102009006886B4 (de) * | 2009-01-30 | 2012-12-06 | Advanced Micro Devices, Inc. | Verringerung von Dickenschwankungen einer schwellwerteinstellenden Halbleiterlegierung durch Verringern der Strukturierungsungleichmäßigkeiten vor dem Abscheiden der Halbleiterlegierung |
DE102009010883B4 (de) * | 2009-02-27 | 2011-05-26 | Amd Fab 36 Limited Liability Company & Co. Kg | Einstellen eines nicht-Siliziumanteils in einer Halbleiterlegierung während der FET-Transistorherstellung mittels eines Zwischenoxidationsprozesses |
ATE535937T1 (de) * | 2009-05-18 | 2011-12-15 | Soitec Silicon On Insulator | Herstellungsverfahren für ein hybrid- halbleitersubstrat |
US8395216B2 (en) * | 2009-10-16 | 2013-03-12 | Texas Instruments Incorporated | Method for using hybrid orientation technology (HOT) in conjunction with selective epitaxy to form semiconductor devices with regions of different electron and hole mobilities and related apparatus |
TWI550828B (zh) * | 2011-06-10 | 2016-09-21 | 住友化學股份有限公司 | 半導體裝置、半導體基板、半導體基板之製造方法及半導體裝置之製造方法 |
EP2728608A4 (en) * | 2011-06-30 | 2014-11-19 | Kyocera Corp | COMPOSITE SUBSTRATE AND METHOD FOR THE PRODUCTION THEREOF |
CN102881694A (zh) * | 2011-07-14 | 2013-01-16 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
US8883598B2 (en) * | 2012-03-05 | 2014-11-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Thin capped channel layers of semiconductor devices and methods of forming the same |
CN102842584B (zh) * | 2012-07-16 | 2016-05-18 | 西安电子科技大学 | 一种应变Si垂直沟道SOI BiCMOS集成器件及制备方法 |
CN102800680B (zh) * | 2012-07-16 | 2015-04-22 | 西安电子科技大学 | 一种混合晶面垂直沟道Si基BiCMOS集成器件及制备方法 |
CN102738149B (zh) * | 2012-07-16 | 2015-09-30 | 西安电子科技大学 | 一种基于平面应变SiGe HBT器件的BiCMOS集成器件及制备方法 |
CN102738152B (zh) * | 2012-07-16 | 2015-09-30 | 西安电子科技大学 | 一种双多晶的应变Si BiCMOS集成器件及制备方法 |
US8796751B2 (en) | 2012-11-20 | 2014-08-05 | Micron Technology, Inc. | Transistors, memory cells and semiconductor constructions |
US9178011B2 (en) | 2013-03-13 | 2015-11-03 | Intermolecular, Inc. | Deposition of anisotropic dielectric layers orientationally matched to the physically separated substrate |
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US6245615B1 (en) | 1999-08-31 | 2001-06-12 | Micron Technology, Inc. | Method and apparatus on (110) surfaces of silicon structures with conduction in the <110> direction |
US6902962B2 (en) | 2003-04-04 | 2005-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicon-on-insulator chip with multiple crystal orientations |
US6830962B1 (en) | 2003-08-05 | 2004-12-14 | International Business Machines Corporation | Self-aligned SOI with different crystal orientation using wafer bonding and SIMOX processes |
US7034362B2 (en) * | 2003-10-17 | 2006-04-25 | International Business Machines Corporation | Double silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) structures |
US6995456B2 (en) * | 2004-03-12 | 2006-02-07 | International Business Machines Corporation | High-performance CMOS SOI devices on hybrid crystal-oriented substrates |
US7422956B2 (en) * | 2004-12-08 | 2008-09-09 | Advanced Micro Devices, Inc. | Semiconductor device and method of making semiconductor device comprising multiple stacked hybrid orientation layers |
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CN102751292B (zh) * | 2012-07-16 | 2016-03-30 | 西安电子科技大学 | 一种基于三多晶SiGe HBT的混合晶面应变BiCMOS集成器件及制备方法 |
CN102738163B (zh) * | 2012-07-16 | 2015-08-19 | 西安电子科技大学 | 一种双多晶SiGe HBT混合晶面BiCMOS集成器件及制备方法 |
CN102751292A (zh) * | 2012-07-16 | 2012-10-24 | 西安电子科技大学 | 一种基于三多晶SiGe HBT的混合晶面应变BiCMOS集成器件及制备方法 |
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CN105845678A (zh) * | 2015-01-30 | 2016-08-10 | 国际商业机器公司 | 形成半导体结构的方法及其半导体结构 |
CN105845678B (zh) * | 2015-01-30 | 2018-12-07 | 国际商业机器公司 | 形成半导体结构的方法及其半导体结构 |
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CN1956199B (zh) | 2011-09-07 |
JP2007123892A (ja) | 2007-05-17 |
US7696574B2 (en) | 2010-04-13 |
US20070090467A1 (en) | 2007-04-26 |
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