CN1941437A - 氮化镓基半导体发光二极管及其制造方法 - Google Patents
氮化镓基半导体发光二极管及其制造方法 Download PDFInfo
- Publication number
- CN1941437A CN1941437A CNA2006101397752A CN200610139775A CN1941437A CN 1941437 A CN1941437 A CN 1941437A CN A2006101397752 A CNA2006101397752 A CN A2006101397752A CN 200610139775 A CN200610139775 A CN 200610139775A CN 1941437 A CN1941437 A CN 1941437A
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- Prior art keywords
- type nitride
- sapphire substrate
- nitride semiconductor
- semiconductor layer
- layer
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 181
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 229910002601 GaN Inorganic materials 0.000 title claims description 83
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 21
- 150000004767 nitrides Chemical class 0.000 claims abstract description 112
- 239000000758 substrate Substances 0.000 claims abstract description 107
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 106
- 239000010980 sapphire Substances 0.000 claims abstract description 106
- 238000000034 method Methods 0.000 claims description 32
- 238000005229 chemical vapour deposition Methods 0.000 claims description 25
- 238000005516 engineering process Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 12
- 238000000313 electron-beam-induced deposition Methods 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 229910052697 platinum Inorganic materials 0.000 claims description 12
- 238000007639 printing Methods 0.000 claims description 12
- 238000002310 reflectometry Methods 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910003465 moissanite Inorganic materials 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 6
- 229910052703 rhodium Inorganic materials 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 238000005476 soldering Methods 0.000 claims description 6
- 229910017083 AlN Inorganic materials 0.000 claims description 4
- 230000017525 heat dissipation Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 description 8
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- 230000007850 degeneration Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 4
- 239000000047 product Substances 0.000 description 3
- 229940044658 gallium nitrate Drugs 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2005-0089199 | 2005-09-26 | ||
KR1020050089199A KR100716790B1 (ko) | 2005-09-26 | 2005-09-26 | 질화갈륨계 반도체 발광소자 및 그 제조방법 |
KR1020050089199 | 2005-09-26 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2008100950545A Division CN101271952A (zh) | 2005-09-26 | 2006-09-25 | 氮化镓基半导体发光二极管及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1941437A true CN1941437A (zh) | 2007-04-04 |
CN100424903C CN100424903C (zh) | 2008-10-08 |
Family
ID=37892768
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101397752A Expired - Fee Related CN100424903C (zh) | 2005-09-26 | 2006-09-25 | 氮化镓基半导体发光二极管及其制造方法 |
CNA2008100950545A Pending CN101271952A (zh) | 2005-09-26 | 2006-09-25 | 氮化镓基半导体发光二极管及其制造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2008100950545A Pending CN101271952A (zh) | 2005-09-26 | 2006-09-25 | 氮化镓基半导体发光二极管及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20070069222A1 (zh) |
JP (2) | JP4994758B2 (zh) |
KR (1) | KR100716790B1 (zh) |
CN (2) | CN100424903C (zh) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101937967A (zh) * | 2010-09-14 | 2011-01-05 | 映瑞光电科技(上海)有限公司 | 发光二极管、发光装置及制造方法 |
CN102130255A (zh) * | 2010-09-28 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | 发光二极管、发光装置以及发光二极管的制造方法 |
CN102339924A (zh) * | 2010-07-19 | 2012-02-01 | 华新丽华股份有限公司 | 氮化镓发光二极管及增加氮化镓发光二极管取光的方法 |
CN102054904B (zh) * | 2009-10-27 | 2013-07-17 | 东莞市福地电子材料有限公司 | 具散热贯穿孔的氮化镓系发光二极管结构 |
CN103258843A (zh) * | 2013-05-30 | 2013-08-21 | 中国电子科技集团公司第十三研究所 | 用于太赫兹肖特基二极管的多孔衬底 |
CN104201560A (zh) * | 2014-09-15 | 2014-12-10 | 上海理工大学 | 半导体芯片和激光模块及其散热方法 |
CN106169528A (zh) * | 2016-09-08 | 2016-11-30 | 厦门市三安光电科技有限公司 | 一种发光二极管结构及其制作方法 |
CN110943046A (zh) * | 2019-12-03 | 2020-03-31 | 李珂 | 一种双极性晶体管和场效应晶体管的整合结构及其制备方法 |
CN111009497A (zh) * | 2019-12-31 | 2020-04-14 | 长春理工大学 | 一种高导热率半导体衬底及其制备方法和应用 |
CN113437185A (zh) * | 2021-06-23 | 2021-09-24 | 南方科技大学 | 一种高效制备Micro-LED芯片的方法和*** |
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US20080061306A1 (en) * | 2006-09-12 | 2008-03-13 | Hong Kong Applied Science and Technology Research Institute Company Limited | Semiconductor light emitting device |
KR101364718B1 (ko) * | 2007-02-15 | 2014-02-19 | 서울바이오시스 주식회사 | 발광 소자 및 그 제조 방법 |
KR101393745B1 (ko) * | 2007-06-21 | 2014-05-12 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
TW200929591A (en) * | 2007-12-19 | 2009-07-01 | Chi Mei Lighting Technologycorporation | Light-emitting diode device with thermally conductive base |
KR101020961B1 (ko) | 2008-05-02 | 2011-03-09 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR100992776B1 (ko) | 2008-11-14 | 2010-11-05 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
TWI408831B (zh) * | 2008-12-05 | 2013-09-11 | 私立中原大學 | 發光二極體及其製程 |
KR101030493B1 (ko) * | 2008-12-18 | 2011-04-21 | 주식회사 오디텍 | 고효율 열방출 공진 발광 다이오드 패키지 및 그 제조방법 |
CN102082222A (zh) * | 2009-12-01 | 2011-06-01 | 鸿富锦精密工业(深圳)有限公司 | 发光二极管芯片及其制造方法 |
KR101631599B1 (ko) * | 2009-12-02 | 2016-06-27 | 삼성전자주식회사 | 발광 소자 및 그 제조 방법 |
JP5275276B2 (ja) * | 2010-03-08 | 2013-08-28 | 株式会社東芝 | 半導体発光素子 |
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JP2012156241A (ja) * | 2011-01-25 | 2012-08-16 | Toshiba Corp | 半導体発光素子の製造方法 |
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JP3791459B2 (ja) * | 2002-05-27 | 2006-06-28 | 株式会社デンソー | 半導体装置およびその製造方法 |
DE10245628A1 (de) * | 2002-09-30 | 2004-04-15 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung emittierender Halbleiterchip und Verfahren zu dessen Herstellung |
CN100336234C (zh) * | 2003-03-03 | 2007-09-05 | 诠兴开发科技股份有限公司 | 裸晶式发光二极管 |
JP4123105B2 (ja) * | 2003-05-26 | 2008-07-23 | 松下電工株式会社 | 発光装置 |
US7029951B2 (en) * | 2003-09-12 | 2006-04-18 | International Business Machines Corporation | Cooling system for a semiconductor device and method of fabricating same |
KR101127314B1 (ko) * | 2003-11-19 | 2012-03-29 | 니치아 카가쿠 고교 가부시키가이샤 | 반도체소자 |
KR20050070854A (ko) * | 2003-12-31 | 2005-07-07 | 엘지전자 주식회사 | 반도체 led 소자 |
KR100568297B1 (ko) * | 2004-03-30 | 2006-04-05 | 삼성전기주식회사 | 질화물 반도체 발광 소자 및 그 제조 방법 |
KR20050029167A (ko) * | 2005-02-17 | 2005-03-24 | 이강재 | 광결정 공진기를 갖는 질화물반도체 발광소자 |
-
2005
- 2005-09-26 KR KR1020050089199A patent/KR100716790B1/ko not_active IP Right Cessation
-
2006
- 2006-09-19 JP JP2006253336A patent/JP4994758B2/ja not_active Expired - Fee Related
- 2006-09-21 US US11/524,198 patent/US20070069222A1/en not_active Abandoned
- 2006-09-25 CN CNB2006101397752A patent/CN100424903C/zh not_active Expired - Fee Related
- 2006-09-25 CN CNA2008100950545A patent/CN101271952A/zh active Pending
-
2009
- 2009-08-24 JP JP2009193514A patent/JP2009278139A/ja active Pending
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102054904B (zh) * | 2009-10-27 | 2013-07-17 | 东莞市福地电子材料有限公司 | 具散热贯穿孔的氮化镓系发光二极管结构 |
CN102339924A (zh) * | 2010-07-19 | 2012-02-01 | 华新丽华股份有限公司 | 氮化镓发光二极管及增加氮化镓发光二极管取光的方法 |
CN101937967A (zh) * | 2010-09-14 | 2011-01-05 | 映瑞光电科技(上海)有限公司 | 发光二极管、发光装置及制造方法 |
CN102130255A (zh) * | 2010-09-28 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | 发光二极管、发光装置以及发光二极管的制造方法 |
CN103258843A (zh) * | 2013-05-30 | 2013-08-21 | 中国电子科技集团公司第十三研究所 | 用于太赫兹肖特基二极管的多孔衬底 |
CN103258843B (zh) * | 2013-05-30 | 2016-06-15 | 中国电子科技集团公司第十三研究所 | 用于太赫兹肖特基二极管的多孔衬底 |
CN104201560A (zh) * | 2014-09-15 | 2014-12-10 | 上海理工大学 | 半导体芯片和激光模块及其散热方法 |
CN106169528A (zh) * | 2016-09-08 | 2016-11-30 | 厦门市三安光电科技有限公司 | 一种发光二极管结构及其制作方法 |
CN110943046A (zh) * | 2019-12-03 | 2020-03-31 | 李珂 | 一种双极性晶体管和场效应晶体管的整合结构及其制备方法 |
CN111009497A (zh) * | 2019-12-31 | 2020-04-14 | 长春理工大学 | 一种高导热率半导体衬底及其制备方法和应用 |
CN111009497B (zh) * | 2019-12-31 | 2021-07-06 | 长春理工大学 | 一种高导热率半导体衬底及其制备方法和应用 |
CN113437185A (zh) * | 2021-06-23 | 2021-09-24 | 南方科技大学 | 一种高效制备Micro-LED芯片的方法和*** |
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JP4994758B2 (ja) | 2012-08-08 |
US20070069222A1 (en) | 2007-03-29 |
KR20070034716A (ko) | 2007-03-29 |
JP2007096300A (ja) | 2007-04-12 |
CN101271952A (zh) | 2008-09-24 |
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JP2009278139A (ja) | 2009-11-26 |
KR100716790B1 (ko) | 2007-05-14 |
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