CN1934208B - 具有成分填充孔的多孔化学机械抛光垫 - Google Patents
具有成分填充孔的多孔化学机械抛光垫 Download PDFInfo
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- CN1934208B CN1934208B CN2005800085827A CN200580008582A CN1934208B CN 1934208 B CN1934208 B CN 1934208B CN 2005800085827 A CN2005800085827 A CN 2005800085827A CN 200580008582 A CN200580008582 A CN 200580008582A CN 1934208 B CN1934208 B CN 1934208B
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- oxide
- polishing
- littler
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Abstract
本发明提供一种包含具有孔的聚合材料及配置于孔内的成分的抛光垫,以及一种用上述抛光垫抛光工件的方法及一种制造上述抛光垫的方法。
Description
技术领域
本发明涉及一种适用于化学机械抛光***的抛光垫。
背景技术
化学机械抛光(″CMP″)法用于微电子装置的制造以在半导体晶片、场致发射显示器及许多其它微电子工件上形成平坦表面。例如,半导体装置的制造通常涉及各种加工层的形成、这些层的部分的选择性移除或图案化、及附加加工层在半导体工件表面上的沉积以形成半导体晶片。加工层可包括,例如,绝缘层、栅氧化层、导电层及金属或玻璃层等。通常希望在晶片加工的特定步骤中,加工层的最上表面为平面,即平坦的,用于后续层的沉积。CMP用以平面化加工层,其中沉积的材料如导电或绝缘材料被抛光以平面化用于后续加工步骤的晶片。
在典型CMP法中,晶片倒转安装在CMP工具的托架(carrier)上。力量推动托架和晶片向下朝向抛光垫。托架与晶片在CMP工具抛光台上的旋转抛光垫上方旋转。抛光组合物(也称为抛光浆料)通常在抛光过程时引入在旋转晶片与旋转抛光垫之间。抛光组合物通常包含与最上晶片层的部分互相作用或使其溶解的化学物及以物理方式移除部分层的研磨材料。晶片与抛光垫可以相同方向或相反方向旋转,其任何一个对于进行特定抛光过程都是期望的。托架还可跨越抛光台上的抛光垫振荡。
用于化学机械抛光过程的抛光垫是使用柔软垫材料与刚性垫材料两者制造的,其包括聚合物浸渍的织物、多微孔膜、多孔聚合物泡沫、无孔聚合物片及烧结热塑性颗粒。含有浸渍于聚酯无纺织物的聚氨酯树脂为聚合物浸渍织物的抛光垫的示例。多微孔抛光垫包括涂布在基材上的多微孔氨基甲酸酯膜,其通常为浸渍的织物垫。这些抛光垫为闭孔(closed-cell)多孔膜。多孔聚合物泡沫抛光垫包含闭孔结构,其随机并均匀地分布于所有三维空间内。无孔聚合物片抛光垫包括由固体聚合物片制成的抛光表面,其不具有输送浆料颗粒的固有能力(参照,例如,美国专利5,489,233)。这些固体抛光垫用切入垫表面的大和/或小凹槽外部改性,据称以在化学机械抛光时提供浆料通过的通道。该无孔聚合物抛光垫公开于美国专利6,203,407中,其中抛光垫的抛光表面包含以据称改进化学机械抛光的选择性的方式定向的凹槽。包含多孔开孔(opened-cell)结构的烧结抛光垫可自热塑性聚合物树脂制备。例如,美国专利6,062,968及6,126,532公开了由烧结热塑性树脂制成的开孔多微孔基材的抛光垫。
虽然若干上述抛光垫适于其预期的目的,但仍需其它可提供有效平面化的抛光垫,特别是在由化学机械抛光法抛光的工件中。还需要具有改善的抛光均匀性的抛光垫,其使在工件抛光过程中产生的缺陷如边缘上(edge-on)效应及凹陷的数量最小化。
本发明提供这种抛光垫。本发明的这些及其它优点以及另外的本发明特征由本文提供的本发明说明当可更加明晰。
发明内容
本发明提供一种包含具有孔的聚合材料及配置于孔内的成分的抛光垫基材。本发明进一步提供一种抛光工件的方法,其包括(i)提供欲抛光的工件,(ii)将工件接触包含本发明抛光垫的化学机械抛光***,及(iii)用该抛光***研磨至少一部分工件的表面以抛光工件。本发明还提供一种制造抛光垫的方法,其包括(i)提供具有充气孔的多孔聚合材料,(ii)使该材料经受压差,(iii)将材料的至少一个表面与包含成分的介质接触,(iv)使介质渗入至少一部分孔,及(v)将包含成分填充孔的聚合材料形成抛光垫。
附图说明
图1为在固定施加真空为0.67大气压下吸入具有闭孔的垫内的水与硅油相对浸泡时间的图。
图2为在固定浸泡时间为2分钟下吸入具有闭孔的垫内的水与硅油相对施加真空的图。
图3为在水中固定浸泡时间为2分钟中后施加的真空相对具有闭孔的垫的体积模量的图。
具体实施方式
本发明提供一种包含聚合材料及选自液体、固体或其混合物的成分的化学机械抛光垫,其中聚合材料具有孔且成分配置于孔内。术语″孔″说明在至少部分地仅由聚合材料限制的聚合材料基质内的空隙空间。此外,术语″孔″说明开孔及闭孔。
本发明抛光垫包括聚合材料与成分,基本上由或由聚合材料与成分所组成。聚合材料可为任何适当聚合材料,典型地为热塑性聚合物或热固性聚合物。优选地,聚合材料为选自聚氨酯、聚烯烃、聚乙烯醇、聚醋酸乙烯酯、聚碳酸酯、聚丙烯酸、聚丙烯酰胺、聚乙烯、聚丙烯、尼龙、碳氟化合物、聚酯、聚醚、聚酰胺、聚酰亚胺、聚四氟乙烯、聚醚醚酮、其共聚物及其混合物的热塑性聚合物或热固性聚合物。优选地,热塑性聚合物或热固性聚合物选自聚氨酯及聚烯烃。
该成分可为任何适当液体、固体或其混合物。该成分可为任何适当液体,如水、有机溶剂(例如,非芳香族烃、芳香族烃如间吡咯(m-pyrol)均三甲苯、醇、有机酸、含卤素烃、含卤素有机酸、硫醇或醚)、无机酸(例如,盐酸、硫酸、磷酸或硝酸)、硅油、或其任何组合或混合物。例如,液体可为包含溶剂及溶质的溶液。溶剂可为任何适当液体或液体的混合物,例如上述的那些,且溶质可为在溶剂的熔点及沸点限定的温度范围内至少部分可溶于溶剂或与溶剂混溶的任何物质(即,固体、液体或气体)。例如,溶液可在温度为40℃或更低下包含至少二种溶液相,或溶液可在温度为40℃或更高下包含一种溶液相。此外,溶液可为热致可逆的凝胶。热致可逆的凝胶具有在特定温度范围(即,胶凝温度范围)内形成凝胶的特性,且当温度在胶凝温度范围外时,热致可逆的凝胶可为液体或固体。热致可逆的凝胶可包含,例如,聚乙烯及二甲苯。
该成分还可为任何适当固体或固体的混合物。固体可为颗粒,且固体颗粒可具有任何适当平均粒径。例如,平均粒径可为5000微米或更小(例如,2500微米或更小,1000微米或更小,或500微米或更小)。或者,平均粒径可为1微米或更大(例如,100微米或更大,250微米或更大,或500微米或更大)。特别地,固体可由具有最大直径为1微米或更小(例如,0.8微米或更小,0.5微米或更小,或0.1微米或更小)的纳米颗粒所组成。此外,固体可为导电的。固体还可为研磨颗粒,例如金属氧化物(例如,氧化铝、氧化硅、氧化钛、氧化铈、氧化锆、氧化锗、氧化镁、其共形成产物及其组合)。
该成分还可为任何适当的液体与固体的混合物。例如,该成分可为浆料、分散体、胶体或悬浮液。
本发明的抛光垫包含具有孔的聚合材料。孔可包含开孔、闭孔或其组合。例如,孔可包含70%或更多(例如,80%或更多或90%或更多)开孔。孔还可包含70%或更多(例如,80%或更多或90%或更多)闭孔。孔可具有任何适当空隙体积(即,孔的体积)。例如,空隙体积可为75%或更小(例如,65%或更小,55%或更小或45%或更小)。
该成分配置于孔内并可以任何适当排列分布于孔内。该成分可配置在聚合材料中的孔的空隙体积的70%或更大(例如,80%或更大,85%或更大,90%或更大,或95%或更大)中。在另一实施方式中,本发明的抛光垫可包含均匀分布于聚合材料的孔内的成分。
或者,本发明的抛光垫可包含分布在抛光垫第一区内的孔内的成分。抛光垫包含第一表面、反向第二表面及在该表面之间的厚度。抛光垫的第一区可由抛光垫的第一表面和抛光垫厚度的50%或更小(例如,40%或更小,20%或更小,10%或更小,或5%或更小)限定。抛光垫的第二区可由抛光垫的反向第二表面和抛光垫厚度的50%或更小(例如,40%或更小,20%或更小,10%或更小,或5%或更小)限定。第一区与第二区可包含孔并可具有任何适当体积。例如,第一区、第二区或二者可具有体积为50cm3或更小(例如,40cm3或更小,30cm3或更小,20cm3或更小,10cm3或更小,或5cm3或更小)。成分可在第一区、第二区或二者的孔的空隙体积的70%或更大(例如,80%或更大,85%或更大,90%或更大,或95%或更大)内配置。
在另一实施方式中,成分可在位于抛光垫表面的1000微米或更小(例如,750微米或更小,500微米或更小,250微米或更小,或100微米或更小)内的孔的空隙体积的70%或更大(例如,80%或更大,85%或更大,90%或更大,或95%或更大)内配置。
本发明的抛光垫可具有任何适当孔密度。例如,孔密度可为10孔/cm3或更大(例如,15孔/cm3或更大,20孔/cm3或更大,或25孔/cm3或更大)。本发明的抛光垫还可具有任何适当平均孔径。例如,平均孔径可为0.1微米或更大(例如,1微米或更大,5微米或更大,10微米或更大)。或者,平均孔径可为5000微米或更小(例如,2500微米或更小,1000微米或更小,或500微米或更小)。
本发明的抛光垫可具有任何适当密度。例如,密度可为1g/cm3或更小(例如,0.8g/cm3或更小或0.5g/cm3或更小)。或者,本发明的抛光垫可具有密度,其为聚合材料的理论密度的75%或更小(例如,65%或更小,55%或更小,或45%或更小)。或者,本发明的抛光垫具有密度为2g/cm3或更小。
本发明的抛光垫可单独使用,或任选地可与另一抛光垫配对。当二个抛光垫配对时,用于接触欲抛光的工件的抛光垫作为抛光层,同时其它抛光垫作为副垫(subpad)。例如,本发明的抛光垫可为副垫,其与具有抛光表面的传统抛光垫配对,其中传统抛光垫作为抛光层。或者,本发明的抛光垫可包括抛光表面并作为抛光层,并可与作为副垫的传统抛光垫配对。作为抛光层与本发明的抛光垫组合使用的适当抛光垫包括实心(solid)或多孔聚氨酯,其中许多为本领域已知的。适当副垫包括聚氨酯泡沫副垫、浸渍毡副垫、多微孔聚氨酯副垫及烧结的氨基甲酸酯副垫。抛光层和/或副垫任选地包含凹槽、通道、中空段、窗、孔等。副垫可通过任何适当的方式固定至抛光层。例如,抛光层及副垫可通过粘合剂固定或可通过焊接或类似技术附着。通常,中间衬里层如聚对苯二甲酸乙二醇酯膜配置在抛光层与副垫之间。当本发明的抛光垫与传统抛光垫配对时,该复合抛光垫也被视为本发明的抛光垫。
抛光层可通过磨光或调节如使垫抵相对研磨表面移动来改性。调节用的优选研磨表面为盘,其优选为金属且其优选嵌有尺寸为1微米至0.5毫米的钻石。任选地,调节可在调节流体,优选含有研磨颗粒的水基流体存在下进行。
抛光层任选地进一步包含凹槽、通道和/或穿孔。这种特征可有利于抛光组合物横向传输穿过抛光层的表面。凹槽、通道和/或小孔可呈现任何适当图案并可具有任何适当深度及宽度。抛光垫可具有二个或多个不同凹槽图案,例如,大凹槽与小凹槽的组合,如美国专利5,489,233所述。凹槽可为线性凹槽、倾斜凹槽、同心凹槽、螺旋或圆形凹槽或XY交叉影线图案的形式,并可为连续或非连续连通性。
本发明的抛光垫任选地进一步包含一个或多个孔、透明区或半透明区(例如,如美国专利5,893,796所述的窗)。当抛光垫基材与原位CMP加工监控技术结合使用时,期望包括这种孔或半透明区(即,光学透射区)。孔可具有任何适当形状并可与排放通道组合使用,该排放通道用于最小化或消除在抛光表面上的过量抛光组合物。光学透射区或窗可为任何适当窗,其中许多为本领域已知的。例如,光学透射区可包含玻璃或基于聚合物的栓塞,其***抛光垫的孔中或可包含用于抛光垫的其余部分的相同聚合材料。通常,光学透射区在190nm至10,000nm之间(例如,190nm至3500nm,200nm至1000nm或200nm至780nm)的一个或多个波长处具有透光率为10%或更大(例如,20%或更大,或30%或更大)。
光学透射区可具有任何适当结构(例如,结晶度)、密度及孔隙度。例如,光学透射区可为实心的或多孔的(例如,具有平均孔径低于1微米的微孔或纳米孔)。优选地,光学透射区为实心的或几乎实心的(例如,具有空隙体积为3%或更小)。光学透射区任选地进一步包含选自聚合物颗粒、无机颗粒及其组合的颗粒。光学透射区任选地包含孔。
光学透射区任选地进一步包含染料,其使得抛光垫材料能够选择性地透射特定波长的光。染料滤出不期望波长的光(例如,背景光线)并因而改善检测的信号噪声比。光学透射区可包含任何适当染料或可包含染料的组合。适当染料包括聚甲川染料、二-及三-芳基次甲基染料、二芳基次甲基的氮杂类似物染料、氮杂(18)轮烯染料、天然染料、硝基染料、亚硝基染料、偶氮染料、蒽醌染料、硫染料等。期望地,染料的透射谱与用于原位终点检测的光波长匹配或重叠。例如,当用于终点检测(EPD)***的光源为HeNe激光器,其产生具有波长为633nm的可见光时,染料优选为红色染料,其可透射具有波长为633nm的光。
本发明的抛光垫任选地包含颗粒如并入聚合材料内的颗粒。颗粒可为研磨颗粒、聚合物颗粒、复合颗粒(例如,包胶(encapsulated)颗粒)、有机颗粒、无机颗粒、澄清(clarifying)颗粒、水溶性颗粒及其混合物。聚合物颗粒、复合颗粒、有机颗粒、无机颗粒、澄清颗粒及水溶性颗粒本质上也可为研磨剂或非研磨剂。
研磨颗粒可具有任何适当材料。例如,研磨颗粒可包含金属氧化物,如选自氧化铝、氧化硅、氧化钛、氧化铈、氧化锆、氧化锗、氧化镁、其共形成产物及其组合的金属氧化物,或碳化硅、氮化硼、钻石、石榴石或陶瓷研磨材料。研磨颗粒可为金属氧化物与陶瓷的混杂物或无机与有机材料的混杂物。颗粒也可为聚合物颗粒,其许多叙述于美国专利5,314,512中,例如,聚苯乙烯颗粒、聚甲基丙烯酸甲酯颗粒、液晶聚合物(LCP)、聚醚醚酮(PEEK’s)、粒状热塑性聚合物(例如,粒状热塑性聚氨酯)、粒状交联聚合物(例如,粒状交联聚氨酯或聚环氧化物)或其组合。若多孔凹状材料包含聚合物树脂,那么聚合物颗粒期望地具有熔点高于多孔泡沫的聚合物树脂的熔点。复合颗粒可为包含核及外层的任何适当的颗粒。例如,复合颗粒可包含固体核(例如,金属氧化物、金属、陶瓷或聚合物)及聚合壳(例如,聚氨酯、尼龙或聚乙烯)。澄清颗粒可为页硅酸盐(例如,云母如氟化云母及粘土如滑石、高岭石、蒙脱石、锂蒙脱石)、玻璃纤维、玻璃珠、钻石颗粒、碳纤维等。
本发明的抛光垫可以任何适当方式制备。制造本发明抛光垫的优选方法包括:i)提供包含充气孔的聚合材料,(ii)使聚合材料经受压差,(iii)将聚合材料的至少一个表面接触包括选自液体、固体或其混合物的成分的介质,(iv)使包含成分的介质渗入至少一部分聚合材料的孔,及(v)将包含成分填充孔的聚合材料形成化学机械抛光垫。
压差为大于或低于大气压的压力。例如,压差可为大于1大气压的压力(例如,2大气压或更大,5大气压或更大,10大气压或更大,或20大气压或更大)。在另一实施方式中,压差可为低于1大气压的压力(例如,0.5大气压或更小,0.2大气压或更小,0.1大气压或更小,0.05大气压或更小,或0.005大气压或更小)。在使聚合材料经受压差前或在使聚合材料经受压差后,聚合材料可与包含成分的介质接触。
包含成分的介质通过压差分布于聚合材料的孔内。例如,包含成分的介质可通过压差均匀地分布于聚合材料的孔内。
包括包含成分的孔(即,成分填充孔)的聚合材料可形成抛光垫,如用于化学机械抛光***的抛光垫。抛光垫可具有任何适当形状(例如,圆形或线形)。此外,包含成分填充孔的聚合材料可在形成抛光垫之前或之后改性。例如,可干燥溶剂以留下溶质颗粒在孔内,且包含成分填充孔的聚合材料可压缩以在聚合材料的玻璃化转变温度(Tg)与熔点温度(Tm)之间的温度下通过模制形成聚合片材。
本发明的抛光垫特别适合与化学机械抛光(CMP)装置联合使用。通常,该装置包含(a)台板,其当使用时移动并具有由轨道、线性或圆周运动产生的速度,(b)当移动时与台板接触并与台板一起移动的本发明的抛光垫,及(c)通过相对于用于接触欲抛光的工件的抛光垫表面接触并移动而保持欲抛光的工件的托架。工件的抛光通过放置工件接触抛光垫,然后抛光垫相对于工件移动,通常在其之间具有抛光组合物,使得研磨至少一部分工件以抛光工件而进行。CMP装置可为任何适当CMP装置,其中许多是本领域已知的。本发明的抛光垫也可与直线抛光工具一起使用。
可用本发明的抛光垫抛光的适当工件包括记忆储存装置、玻璃基材、存储或硬磁盘、金属(例如,贵金属)、磁头、层间介电(ILD)层、聚合物膜(例如,有机聚合物)、低与高介电常数膜、铁电体、微电机***(MEMS)、半导体晶片、场致发射显示器及其它微电子工件,尤其是包含绝缘层(例如,金属氧化物、氮化硅、或低介电材料)和/或含金属层(例如,铜、钽、钨、铝、镍、钛、铂、钌、铑、铱、银、金、其合金及其混合物)的微电子工件。术语″存储或硬磁盘″意指用于以电磁形式保存信息的任何磁盘、硬盘、硬磁盘、或存储磁盘。存储或硬磁盘通常具有包含镍-磷的表面,但此表面可包含任何其它适当材料。适当金属氧化物绝缘层包括,例如,氧化铝、氧化硅、氧化钛、氧化铈、氧化锆、氧化锗、氧化镁、及其组合。此外,工件可包含任何适当金属复合物、基本上由或由任何适当金属复合物所组成。适当金属复合物包括,例如,金属氮化物(例如,氮化钽、氮化钛及氮化钨)、金属碳化物(例如,碳化硅及碳化钨)、金属硅化物(例如,硅化钨及硅化钛)、镍-磷、铝硼硅酸盐、硼硅酸盐玻璃、磷硅酸盐玻璃(PSG)、硼磷硅酸盐玻璃(BPSG)、硅/锗合金及硅/锗/碳合金。工件还可包含半导体基材、基本上由或由任何适当半导体基材所组成。适当半导体基材包括单晶硅、多晶硅、非晶硅、绝缘体上外延硅及砷化镓。优选地,工件包含金属层,更优选选自铜、钨、钽、铂、铝及其组合的金属层。还更优选,金属层包含铜。
可与本发明抛光垫一起使用的抛光组合物包含液态载体(例如,水)及任选地一种或多种添加剂,该添加剂选自研磨剂(例如,氧化铝、氧化硅、氧化钛、氧化铈、氧化锆、氧化锗、氧化镁、及其组合)、氧化剂(例如,过氧化氢及过硫酸铵)、腐蚀抑制剂(例如,苯并***)、成膜剂(例如,聚丙烯酸及聚苯乙烯磺酸)、络合剂(例如,单-、二-及多羧酸、膦酸及磺酸)、pH调节剂(例如,盐酸、硫酸、磷酸、氢氧化钠、氢氧化钾及氢氧化铵)、缓冲剂(例如,磷酸盐缓冲剂、醋酸盐缓冲剂及硫酸盐缓冲剂)、表面活性剂(例如,非离子界面活性剂)、其盐及其组合。抛光组合物的成分的选择部分取决于欲抛光工件的类型。
期望地,CMP装置进一步包含原位抛光终点检测***,其中许多为本领域已知的。通过分析由工件表面反射的光线或其它辐射检查并监控抛光过程的技术为本领域已知的。这些方法叙述于,例如,美国专利5,196,353、美国专利5,433,651、美国专利5,609,511、美国专利5,643,046、美国专利5,658,183、美国专利5,730,642、美国专利5,838,447、美国专利5,872,633、美国专利5,893,796、美国专利5,949,927及美国专利5,964,643。期望地,对欲抛光的工件的抛光过程的进展的检查或监控使得能确定抛光终点,即,确定终止对于特定工件的抛光过程的时间。
以下实例进一步例示本发明,但无论如何不应解释为限制其范围。
实施例1-4
这些实施例表明在各种条件下成分吸入聚合物泡沫内,特别是炭黑吸入聚烯烃泡沫内。在各个这些实施例中,泡沫样品放入包含成分的介质内,然后在真空室内经受0.5大气压的压力。各个这些实施例的细节示于表1内。
表1:
各样品增益的重量%(即,样品重量%增益)显示于表1并表明炭黑吸入泡沫的孔内的程度。这些实施例的结果证实显著量的成分如炭黑可分布于聚合发泡体的孔内。
Claims (49)
1.一种化学机械抛光垫,其包含聚合材料及选自液体、固体或其混合物的成分,其中该聚合材料具有孔,且该成分配置于该孔内;其中该孔包含70%或更多的开孔;其中该抛光垫具有孔密度为10孔/cm3或更大,该平均孔径为0.1微米至5000微米。
2.权利要求1的抛光垫,其中该聚合材料为热塑性聚合物或热固性聚合物。
3.权利要求2的抛光垫,其中该热塑性聚合物或热固性聚合物选自聚氨酯、聚烯烃、聚乙烯醇、聚醋酸乙烯酯、聚碳酸酯、聚丙烯酸、聚丙烯酰胺、碳氟化合物、聚酯、聚醚、聚酰胺、聚酰亚胺、聚醚醚酮、上述单体的共聚物及上述聚合物的混合物。
4.权利要求3的抛光垫,其中所述聚烯烃为聚乙烯或聚丙烯。
5.权利要求3的抛光垫,其中所述聚酰胺为尼龙。
6.权利要求3的抛光垫,其中所述碳氟化合物为聚四氟乙烯。
7.权利要求3的抛光垫,其中该热塑性聚合物或热固性聚合物选自聚氨酯及聚烯烃。
8.权利要求1的抛光垫,其中该成分为液体。
9.权利要求8的抛光垫,其中该液体为包含溶剂及溶质的溶液。
10.权利要求9的抛光垫,其中该溶液包含至少二种溶液相。
11.权利要求10的抛光垫,其中该溶液在40℃或更低下包含至少二种溶液相。
12.权利要求9的抛光垫,其中该溶液包含一种溶液相。
13.权利要求12的抛光垫,其中该溶液在40℃或更低下包含一种溶液相。
14.权利要求9的抛光垫,其中该溶液为热致可逆的凝胶。
15.权利要求14的抛光垫,其中该热致可逆的凝胶包括聚乙烯及二甲苯。
16.权利要求1的抛光垫,其中该成分为固体。
17.权利要求16的抛光垫,其中该固体基本上由具有最大直径为1微米或更小的颗粒所组成。
18.权利要求16的抛光垫,其中该固体为导电的。
19.权利要求16的抛光垫,其中该固体基本上由研磨颗粒所组成。
20.权利要求19的抛光垫,其中该研磨颗粒包括选自氧化铝、氧化硅、氧化钛、氧化铈、氧化锆、氧化锗、氧化镁、上述材料共形成产物、及包括该共形成产物的上述材料组合的金属氧化物。
21.权利要求1的抛光垫,其中该抛光垫具有密度为2g/cm3或更小。
22.权利要求1的抛光垫,其中该抛光垫具有空隙体积为75%或更小。
23.权利要求1的抛光垫,其中该抛光垫进一步包含具有凹槽的抛光表面。
24.权利要求1的抛光垫,其中该抛光垫进一步包含光学透射区。
25.权利要求24的抛光垫,其中该光学透射区在190nm至3500nm之间的一种或多种波长处具有透光率为至少10%。
26.权利要求1的抛光垫,其中该抛光垫进一步包含研磨颗粒。
27.权利要求26的抛光垫,其中该研磨颗粒包括选自氧化铝、氧化硅、氧化钛、氧化铈、氧化锆、氧化锗、氧化镁、上述材料的共形成产物、及包括该共形成产物的上述材料组合的金属氧化物。
28.权利要求1的抛光垫,其中该抛光垫具有第一表面、反向第二表面及在第一及第二表面之间的厚度,其中至少一些孔位于由第一表面及10%或更小的抛光垫厚度限定的抛光垫的第一区内,且其中该成分配置于该第一区内的70%或更多的孔的空隙体积内。
29.权利要求28的抛光垫,其中至少一些孔位于由第二表面及10%或更小的抛光垫厚度限定的抛光垫的第二区内,且其中该成分配置于该第二区内的70%或更多的孔的空隙体积内。
30.权利要求28的抛光垫,其中该第一区具有体积为10cm3或更小。
31.权利要求29的抛光垫,其中该第二区具有体积为10cm3或更小。
32.一种抛光基材的方法,包括
(i)提供欲抛光的工件,
(ii)将该工件接触包含权利要求1的抛光垫的化学机械抛光***,及
(iii)用该抛光***研磨至少一部分工件的表面以抛光该工件。
33.权利要求32的方法,其中该抛光垫进一步包含选自金属氧化物颗粒、聚合物颗粒、复合颗粒、水溶性颗粒及其组合的研磨颗粒。
34.权利要求33的方法,其中该研磨颗粒包括选自氧化铝、氧化硅、氧化钛、氧化铈、氧化锆、氧化锗、氧化镁、上述材料的共形成产物、及包括该共形成产物的上述材料组合的金属氧化物。
35.权利要求32的方法,其中该方法进一步包括原位检测抛光终点。
36.一种制造化学机械抛光垫的方法,包括:
(i)提供具有充气孔的聚合材料,
(ii)使该聚合材料经受压差,
(iii)将该聚合材料的至少一个表面与包含选自液体、固体或其混合物的成分的介质接触,
(iv)使该包含成分的介质渗入该聚合材料的至少一部分孔中,及
(v)将包含成分填充孔的聚合材料形成化学机械抛光垫。
37.权利要求36的方法,其中在该多孔聚合材料经受压差后,该聚合材料与该介质接触。
38.权利要求36的方法,其中在该多孔聚合材料经受压差前,该聚合材料与该介质接触。
39.权利要求36的方法,其中该压差为低于大气压的压力。
40.权利要求36的方法,其中该压差为高于大气压的压力。
41.权利要求36的方法,其中该包含成分的介质通过压差配置于孔内。
42.权利要求36的方法,其中该包含成分填充孔的聚合材料压缩以形成聚合片材。
43.权利要求36的方法,其中该成分为液体。
44.权利要求36的方法,其中该液体为包含溶剂及溶质的溶液。
45.权利要求36的方法,其中该成分为固体。
46.权利要求45的方法,其中该固体基本上由具有最大直径为1微米或更小的颗粒所组成。
47.权利要求46的方法,其中该固体为导电的。
48.权利要求46的方法,其中该固体基本上由研磨颗粒所组成。
49.权利要求48的方法,其中该研磨颗粒包括选自氧化铝、氧化硅、氧化钛、氧化铈、氧化锆、氧化锗、氧化镁、上述材料的共形成产物、及包括该共形成产物的上述材料组合的金属氧化物。
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US10/807,064 US7195544B2 (en) | 2004-03-23 | 2004-03-23 | CMP porous pad with component-filled pores |
US10/807,064 | 2004-03-23 | ||
PCT/US2005/008527 WO2005100497A1 (en) | 2004-03-23 | 2005-03-14 | Cmp porous pad with component-filled pores |
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Also Published As
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KR20060127221A (ko) | 2006-12-11 |
EP1751243B1 (en) | 2014-04-16 |
EP1751243A1 (en) | 2007-02-14 |
IL176955A (en) | 2012-10-31 |
WO2005100497A1 (en) | 2005-10-27 |
KR101178335B1 (ko) | 2012-08-29 |
TWI280266B (en) | 2007-05-01 |
TW200609315A (en) | 2006-03-16 |
IL176955A0 (en) | 2006-12-10 |
US20050215177A1 (en) | 2005-09-29 |
IL215969A0 (en) | 2011-12-29 |
US7195544B2 (en) | 2007-03-27 |
CN1934208A (zh) | 2007-03-21 |
US20070180778A1 (en) | 2007-08-09 |
MY139413A (en) | 2009-09-30 |
MY146815A (en) | 2012-09-28 |
JP2007531276A (ja) | 2007-11-01 |
US7699684B2 (en) | 2010-04-20 |
KR20120087991A (ko) | 2012-08-07 |
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