CN1933938A - 低表面能的化学机械抛光垫 - Google Patents
低表面能的化学机械抛光垫 Download PDFInfo
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- CN1933938A CN1933938A CNA2005800083520A CN200580008352A CN1933938A CN 1933938 A CN1933938 A CN 1933938A CN A2005800083520 A CNA2005800083520 A CN A2005800083520A CN 200580008352 A CN200580008352 A CN 200580008352A CN 1933938 A CN1933938 A CN 1933938A
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
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Abstract
本发明提供一种包含共聚物的抛光垫基材,其中该共聚物具有至少一种亲水性重复单元及至少一种疏水性重复单元。本发明还提供一种包含聚合物的抛光垫基材,其中该聚合物为具有附在聚合物链上的至少一种亲水性单元及至少一种疏水性单元的改性聚合物。本发明进一步提供一种抛光工件的方法,其包括(i)提供待抛光的工件,(ii)将该工件接触包含本发明抛光垫基材的化学机械抛光***,及(iii)用抛光***研磨至少一部分该工件的表面以抛光该工件。
Description
技术领域
本发明涉及一种适用于化学机械抛光***的抛光垫。
背景技术
化学机械抛光(″CMP″)法用于微电子器件的制造以在半导体晶片、场致发射显示器及许多其它微电子工件上形成平坦表面。例如,半导体器件的制造通常涉及各种加工层的形成、选择性移除或图案化这些层的部分、及附加的加工层在半导体工件表面上的沉积以形成半导体晶片。加工层可包括,例如,绝缘层、栅氧化层、导电层及金属或玻璃层等。通常希望在晶片加工的特定步骤中,加工层的最上表面为平面的,即,平坦的,用于后续层的沉积。CMP用以平面化加工层,其中沉积的材料如导电或绝缘材料被抛光以平面化该晶片用于后续加工步骤。
在典型CMP法中,晶片倒转安装在CMP工具的托架(carrier)上。力量推动托架和晶片向下朝向抛光垫。托架与晶片在CMP工具抛光台上的旋转抛光垫上方旋转。抛光组合物(亦称为抛光浆料)通常在抛光过程时引入在旋转晶片与旋转抛光垫之间。抛光组合物典型地包含与最上晶片层的部分互相作用或使其溶解的化学物及物理上移除部分层的研磨材料。晶片与抛光垫可以相同方向或相反方向旋转,其无论哪个都希望用于进行的特定抛光过程。托架亦可跨越抛光台上的抛光垫振荡。
用于化学机械抛光过程的抛光垫是使用柔软的垫材料与刚性垫材料两者制造的,其包括聚合物浸渍的织物、多微孔膜、多孔聚合物泡沫、无孔聚合物片及烧结的热塑性颗粒。含有浸渍于聚酯无纺织物的聚氨酯树脂的垫为聚合物浸渍的织物的抛光垫的示例。多微孔抛光垫包括涂布在基材上的多微孔氨基甲酸酯膜,其经常为浸渍的织物垫。这些抛光垫为闭孔(closecell)多孔膜。多孔聚合物泡沫抛光垫包含闭孔结构,其随机并均匀地分布于所有三维空间内。无孔聚合物片抛光垫包括由实心(solid)聚合物片制成的抛光表面,其不具有输送浆料颗粒的固有能力(参照,例如,美国专利5,489,233号)。这些实心抛光垫用切入垫表面的大及/或小凹槽来外部改性,据称以在化学机械抛光过程中提供浆料通过的通道。该无孔聚合物抛光垫公开在美国专利6,203,407号中,其中抛光垫的抛光表面包含以据称改善化学机械抛光的选择性的方式定向的凹槽。包含多孔开孔(opened cell)结构的烧结抛光垫可由热塑性聚合物树脂制备。例如,美国专利6,062,968号及6,126,532号揭示具有通过烧结热塑性树脂制成的开孔多微孔基材的抛光垫。
虽然若干上述抛光垫适于其预期的目的,但仍需其它可提供有效平面化的抛光垫,特别是通过化学机械抛光法抛光的工件中提供有效平面化。此外,还需要具有较低表面能的抛光垫,特别是用于与疏水性抛光组合物一起使用。
本发明提供这种抛光垫。本发明的这些及其它优点以及附加的发明特征将从本文提供的本发明描述而清楚。
发明内容
本发明提供一种包含共聚物的抛光垫基材,其中该共聚物具有至少一种亲水性重复单元及至少一种疏水性重复单元。本发明还提供一种包含聚合物的抛光垫基材,其中该聚合物为具有附在聚合物链上的至少一种亲水性单元及至少一种疏水性单元的改性聚合物。本发明进一步提供一种抛光工件的方法,其包括(i)提供待抛光的工件,(ii)将工件接触包含本发明抛光垫基材的化学机械抛光***,及(iii)用抛光***研磨至少一部分工件的表面以抛光工件。
具体实施方式
一种包含共聚物的抛光垫基材,其中共聚物具有至少一种亲水性重复单元及至少一种疏水性重复单元。术语″共聚物″意指包含超过一种重复单元的聚合物链。术语″亲水性重复单元″定义为共聚物的重复片段,使仅由该亲水性重复单元组成的均聚物的表面能超过34mN/m。术语″疏水性重复单元″定义为共聚物的重复片段,使仅由该疏水性重复单元组成的均聚物的表面能为34mN/m或更低。
例如,共聚物可具有以下结构:
(X1)a-(P)y-(X2)b-(X3)c-(N)z-(X4)d
其中X1、X2、X3及X4相同或不同,其为亲水性重复单元或疏水性重复单元,P为亲水性重复单元,N为疏水性重复单元,a、b、c、d、y及z为选自0至100,000以内的整数。
或者,抛光垫基材可包含聚合物,其中聚合物具有附在聚合物链上的至少一种亲水性单元及至少一种疏水性单元。共价键合至聚合物链的亲水性单元或疏水性单元优选具有不同于聚合物链的重复单元的结构。该至少一种亲水性单元及至少一种疏水性单元可附在聚合物链中的末端重复单元或非末端重复单元上。术语″亲水性单元″定义为附在聚合物链上的分子,使仅由该分子组成的物质具有的表面能超过34mN/m。术语″疏水性单元″定义为附在聚合物链上的分子,使仅由该分子组成的物质具有的表面能为34mN/m或更低。
例如,具有附在聚合物链上的至少一种亲水性单元及至少一种疏水性单元的聚合物可由以下结构说明:
U-(X1)a-(X2)b-(X3)c-V
其中(i)X1、X2及X3具有以上给出的意义,(ii)U为亲水性单元,(iii)V为疏水性单元,及(iv)a、b及c为选自0至100,000以内的整数,或
其中(i)X1、X2、X3、X4、X5、X6及X7相同或不同,其为亲水性重复单元或疏水性重复单元,(ii)R1、R2及R3相同或不同,其为亲水性单元或疏水性单元,(iii)U为亲水性单元,(iv)V为疏水性单元,及(v)a、b、c、d及e为选自0至100,000以内的整数。
本发明抛光垫基材所用的聚合物可为任何适合的聚合物并可由任何适合的聚合物制备。例如,适合的聚合物可为热塑性聚合物或热固性聚合物,其选自聚氨酯、聚烯烃、聚乙烯醇、聚醋酸乙烯酯、聚碳酸酯、聚丙烯酸、聚丙烯酰胺、聚乙烯、聚丙烯、尼龙、碳氟化合物、聚酯、聚醚、聚酰胺、聚酰亚胺、聚四氟乙烯、聚醚醚酮、其共聚物及其混合物。
亲水性重复单元及亲水性单元可为任何适合的单元。例如,亲水性重复单元及亲水性单元可选自酯、醚、丙烯酸、丙烯酰胺、酰胺、酰亚胺、乙烯醇、醋酸乙烯酯、丙烯酸酯、甲基丙烯酸酯、砜、氨基甲酸酯、氯乙烯、醚醚酮、碳酸酯、及其低聚物和组合。
疏水性重复单元及疏水性单元可为任何适合的单元。例如,疏水性重复单元及疏水性单元可选自碳氟化合物、四氟乙烯、氟乙烯、硅氧烷、二甲基硅氧烷、丁二烯、乙烯、烯烃、苯乙烯、丙烯、及其低聚物和组合。
本发明抛光垫基材可具有任何适合的表面能,期望表面能为34mN/m或更低(例如,30mN/m或更低,26mN/m或更低或22mN/m或更低)。表面能为液态组合物在仍展现出与表面的接触角大于零的同时可具有的最低表面能。因此,具有表面能为34mN/m或更低的聚合物、共聚物或改性聚合物更容易被具有表面能为40mN/m或更低(例如,34mN/m或更低,28mN/m或更低或22mN/m或更低)的液态组合物(如抛光组合物)湿润。
本发明的抛光垫基材可为实心无孔抛光垫基材。例如,抛光垫基材可具有共聚物或改性聚合物的最大理论密度的90%或更高的密度(例如,93%或更高,95%或更高或98%或更高)。
或者,本发明的抛光垫基材可为多孔抛光垫基材。例如,抛光垫基材可具有共聚物或改性聚合物的最大理论密度的70%或更低的密度(例如,60%或更低、50%或更低或40%或更低)。多孔抛光垫基材可具有任何适合的空隙体积。例如,抛光垫基材可具有空隙体积为75%或更低(例如,70%或更低、60%或更低或50%或更低)。
本发明的抛光垫基材可单独使用,或任选地可与另一抛光垫基材配对。当两个抛光垫基材配对时,预定接触待抛光的工件的抛光垫基材作为抛光层,同时另外的抛光垫基材作为副垫(subpad)。例如,本发明的抛光垫基材可为副垫,其与具有抛光表面的传统抛光垫配对,其中该传统抛光垫作为抛光层。或者,本发明的抛光垫基材可包含抛光表面并作为抛光层,并可与作为副垫的传统抛光垫配对。作为抛光层与本发明的抛光垫基材组合使用的适合的抛光垫包括实心或多孔聚氨酯垫,其中许多为本领域已知的。适合的副垫包括聚氨酯泡沫副垫、浸渍的毛毡(felt)副垫、多微孔聚氨酯副垫及烧结的氨基甲酸酯副垫。抛光层及/或副垫任选地包含凹槽、通道(channel)、中空段、窗、孔等。副垫可通过任何适合的方式固定至抛光层。例如,抛光层及副垫可通过粘合剂固定或可通过焊接或类似技术附着。典型地,中间衬垫(backing)层如聚对苯二甲酸乙二醇酯膜配置在抛光层与副垫之间。当本发明的抛光垫基材与传统抛光垫配对时,该复合抛光垫也视为本发明的抛光垫基材。
抛光层可通过抛光或调整如通过相对研磨表面移动垫来改性。用于调整的优选研磨表面为盘,其优选为金属且其优选嵌有尺寸范围为1μm至0.5mm的钻石。任选地,调整可在调整流体,优选为含有研磨颗粒的基于水的流体存在下进行。
抛光层任选地进一步包含凹槽、通道及/或穿孔。该特征可促进抛光组合物穿过抛光层的表面的横向(lateral)输送。凹槽、通道及/或穿孔可为任何适合的图案并可具有任何适合的深度及宽度。抛光垫基材可具有两个或多个不同凹槽图案,例如,大凹槽与小凹槽的组合,如美国专利5,489,233号所述。凹槽可为线状凹槽、倾斜凹槽、同心凹槽、螺旋或环形凹槽、或XY交叉影线图案,并在连通性上可为连续或非连续的。
本发明的抛光垫基材任选地进一步包含一个或多个孔、透明区或半透明区(例如,如美国专利5,893,796所述的窗)。当抛光垫基材与原位CMP加工监视技术结合使用时,期望包括这种孔或半透明区(即,光学透射区)。孔可具有任何适合的形状并可与用于最小化或消除在抛光表面上的过量抛光组合物的排放通道组合使用。光学透射区或窗可为任何适合的窗,其中许多是本领域已知的。例如,光学透射区可包含玻璃或基于聚合物的栓塞,其***抛光垫的孔中或可包含用于抛光垫的其余部分的相同聚合材料。例如,光学透射区可任选地包含具有至少一种亲水性重复单元及至少一种疏水性重复单元的共聚物,或光学透射区可任选地包含具有附在聚合物链上的至少一种亲水性单元及至少一种疏水性单元的聚合物。典型地,光学透射区在190nm至10,000nm之间例如,190nm至3500nm,200nm至1000nm或200nm至780nm)的一个或多个波长下具有的透光率为10%或更高(例如,20%或更高或30%或更高)。
光学透射区可具有任何适合的结构(例如,结晶度)、密度及孔隙度。例如,光学透射区可为实心的或多孔的(例如,具有平均孔径低于1微米的微孔或纳米孔)。优选的是,光学透射区为实心的或几乎实心的(例如,具有空隙体积为3%或更低)。光学透射区任选地进一步包含选自聚合物颗粒、无机颗粒及其组合的颗粒。光学透射区任选地包含孔。
光学透射区任选地进一步包含染料,其使得抛光垫基材能够选择性透射特定波长的光。染料起到滤出不需要的光的波长(例如,背景光)的作用且因而改善检测的噪声比的信号。光学透射区可包含任何适合的染料或可包含染料的组合。适合的染料包括聚甲川染料、二-及三-芳基甲川染料、二芳基甲川的氮杂类似物染料、氮杂(18)轮烯染料、天然染料、硝基染料、亚硝基染料、偶氮染料、蒽醌染料、硫染料等。期望地,染料的透射光谱与用于原位终点检测的光波长匹配或重叠。例如,当用于终点检测(EPD)***的光源为HeNe激光器,其产生具有波长为633nm的可见光时,染料优选为红色染料,其可传送具有波长为633nm的光。
本发明的抛光垫基材任选地包含颗粒,如引入基材内的颗粒。颗粒可为研磨颗粒、聚合物颗粒、复合颗粒(例如,包胶(encapsulated)颗粒)、有机颗粒、无机颗粒、澄清(clarifying)颗粒、水溶性颗粒及其混合物。聚合物颗粒、复合颗粒、有机颗粒、无机颗粒、澄清颗粒及水溶性颗粒本质上可为研磨剂或可为非研磨剂。
研磨颗粒可为任何适合的材料。例如,研磨颗粒可包括选自氧化铝、氧化硅、氧化钛、氧化铈、氧化锆、氧化锗、氧化镁、其共同形成产物及其组合的金属氧化物,或碳化硅、氮化硼、钻石、石榴石、或陶瓷研磨材料。研磨颗粒可为金属氧化物与陶瓷的混杂物(hybrid)或无机与有机材料的混杂物。颗粒也可为聚合物颗粒,其许多叙述于美国专利5,314,512号中,例如,聚苯乙烯颗粒、聚甲基丙烯酸甲酯颗粒、液晶聚合物(LCP,例如,含有萘单元的芳香族共聚酯)、聚醚醚酮(PEEK’s)、粒状热塑性聚合物(例如,粒状热塑性聚氨酯)、粒状交联聚合物(例如,粒状交联聚氨酯或聚环氧化物)或其组合。复合颗粒可为包含核及外涂层的任何合适的颗粒。例如,复合颗粒可包含实心核(solid core)(例如,金属氧化物、金属、陶瓷或聚合物)及聚合壳例如,聚氨酯、尼龙或聚乙烯)。澄清颗粒可为页硅酸盐(例如,云母如氟化云母,及粘土如滑石、高岭石、蒙脱石、锂蒙脱石)、玻璃纤维、玻璃珠、钻石颗粒、碳纤维等。
本发明的抛光垫基材可由本领域已知的任何适合的方式制备。例如,抛光垫基材可通过烧结包含具有至少一种亲水性重复单元及至少一种疏水性重复单元的共聚物的粉块或通过烧结包含具有附在聚合物链上的至少一种疏水性单元及至少一种亲水性单元的聚合物的粉块制成。或者,本发明的抛光垫基材可由挤出上述共聚物或上述聚合物制成。挤出的共聚物或聚合物可任选地改性以增加孔隙度或空隙体积。
本发明的抛光垫基材特别适合与化学机械抛光(CMP)装置组合使用。典型地,该装置包含(a)压板,当使用时该压板运动并具有由轨道、线性或圆周运动产生的速度,(b)本发明的抛光垫基材,其与压板接触并当压板移动时与压板一起移动,及(c)托架,其通过与用于接触待抛光的工件的抛光垫的表面接触并相对移动来保持待抛光的工件。通过放置工件接触抛光垫基材,然后抛光垫基材相对于工件移动,典型地在其中间有抛光组合物,以研磨至少一部分工件以抛光工件而进行工件的抛光。CMP装置可为任何适合的CMP装置,其中许多为本领域已知的。本发明的抛光垫基材还可与线性抛光工具一起使用。
可用本发明的抛光垫基材抛光的适合的工件包括记忆储存器件、玻璃基材、存储或硬磁盘、金属(例如贵金属)、磁头、层间介电(ILD)层、聚合物膜(例如有机聚合物)、低与高介电质常数膜、铁电体、微电机械***(MEMS)、半导体晶片、场致发射显示器及其它微电子工件,尤其是包含绝缘层(例如金属氧化物、氮化硅、或低介电质材料)及/或含金属层(例如,铜、钽、钨、铝、镍、钛、铂、钌、铑、铱、银、金、其合金及其混合物)的微电子工件。术语″存储或硬磁盘″意指用于以电磁形式保存信息的任何磁盘、硬盘、硬磁盘、或存储磁盘。存储或硬磁盘通常具有包含镍-磷的表面,但此表面可包含任何其它适合的材料。适合的金属氧化物绝缘层包括,例如,氧化铝、氧化硅、氧化钛、氧化铈、氧化锆、氧化锗、氧化镁、及其组合。此外,工件可包含任何适合的金属复合物、基本上由或由任何适合的金属复合物组成。适合的金属复合物包括,例如,金属氮化物(例如,氮化钽、氮化钛及氮化钨)、金属碳化物(例如,碳化硅及碳化钨)、金属硅化物(例如,硅化钨及硅化钛)、镍-磷、铝-硼硅酸盐、硼硅玻璃、磷硅玻璃(PSG)、硼磷硅玻璃(BPSG)、硅/锗合金及硅/锗/碳合金。工件还可包含任何适合的半导体基材、基本上由或由任何适合的半导体基体材料组成。适合的半导体基体材料包括单晶硅、多晶硅、非晶硅、绝缘体上硅薄膜(silicon-on-insulator)及砷化镓。优选地,工件包含金属层,更优选,选自铜、钨、钽、铂、铝及其组合的金属层。最优选,金属层包含铜。
可与本发明抛光垫基材一起使用的抛光组合物典型地包含液态载体(例如,水)及任选的一种或多种添加剂,该添加剂选自研磨剂(例如,氧化铝、氧化硅、氧化钛、氧化铈、氧化锆、氧化锗、氧化镁、及其组合)、氧化剂(例如,过氧化氢及过硫酸铵)、腐蚀抑制剂(例如,苯并***)、成膜剂(例如,聚丙烯酸及聚苯乙烯磺酸)、络合剂(例如,单-、二-及多羧酸、膦酸及磺酸)、pH调节剂(例如,盐酸、硫酸、磷酸、氢氧化钠、氢氧化钾及氢氧化铵)、缓冲剂(例如,磷酸盐缓冲剂、醋酸盐缓冲剂及硫酸盐缓冲剂)、表面活性剂(例如,非离子表面活性剂)、其盐及其组合。抛光组合物的成分的选择部分地取决于待抛光工件的类型。
期望地,CMP装置进一步包括原位抛光终点检测***,其中许多为本领域已知的。通过分析从工件表面反射的光或其他辐射来检查并监视抛光过程的技术为本领域已知的。这种方法叙述于,例如,美国专利5,196,353号、美国专利5,433,651号、美国专利5,609,511号、美国专利5,643,046号、美国专利5,658,183号、美国专利5.730,642号、美国专利5,838,447号、美国专利5,872,633号、美国专利5,893,796号、美国专利5,949,927号及美国专利5,964,643号中。期望地,对待抛光的工件的抛光过程的进展的检查或监视使得能够确定抛光终点,即,确定对于特定的工件终止抛光过程的时候。
Claims (50)
1.一种包含共聚物的抛光垫基材,其中该共聚物具有至少一种亲水性重复单元及至少一种疏水性重复单元。
2.权利要求1的抛光垫基材,其中该抛光垫具有的表面能为34mN/m或更低。
3.权利要求1的抛光垫基材,其中该亲水性重复单元选自酯、醚、丙烯酸、丙烯酰胺、酰胺、酰亚胺、乙烯醇、醋酸乙烯酯、丙烯酸酯、甲基丙烯酸酯、砜、氨基甲酸酯、氯乙烯、醚醚酮、碳酸酯、及其低聚物及组合。
4.权利要求1的抛光垫基材,其中该亲水性重复单元为氨基甲酸酯。
5.权利要求1的抛光垫基材,其中该疏水性重复单元选自碳氟化合物、四氟乙烯、氟乙烯、硅氧烷、二甲基硅氧烷、丁二烯、乙烯、烯烃、苯乙烯、丙烯、及其低聚物及组合。
6.权利要求1的抛光垫基材,其中该疏水性重复单元为碳氟化合物或硅氧烷。
7.权利要求1的抛光垫基材,其中该抛光垫基材为实心、无孔抛光垫基材。
8.权利要求1的抛光垫基材,其中该抛光垫基材具有该共聚物的最大理论密度的90%或更高的密度。
9.权利要求1的抛光垫基材,其中该抛光垫基材为多孔抛光垫基材。
10.权利要求9的抛光垫基材,其中该抛光垫基材具有该共聚物的最大理论密度的70%或更低的密度。
11.权利要求9的抛光垫基材,其中该抛光垫基材具有的空隙体积为75%或更低。
12.权利要求1的抛光垫基材,其中该抛光垫基材为抛光层。
13.权利要求12的抛光垫基材,其中该抛光层进一步包括凹槽。
14.权利要求1的抛光垫基材,其中该抛光垫基材为副垫。
15.权利要求1的抛光垫基材,其中该抛光垫基材进一步包括光学透射区。
16.权利要求15的抛光垫基材,其中该光学透射区在190nm至3500nm之间的一个或多个波长处具有的透光率为至少10%。
17.权利要求15的抛光垫基材,其中该光学透射区包括该共聚物。
18.权利要求1的抛光垫基材,其中该抛光垫基材进一步包含研磨颗粒。
19.权利要求18的抛光垫基材,其中该研磨颗粒包含选自氧化铝、氧化硅、氧化钛、氧化铈、氧化锆、氧化锗、氧化镁、其共形成产物及其组合的金属氧化物。
20.一种抛光工件的方法,包括
(i)提供待抛光的工件,
(ii)将该工件接触包含权利要求1的抛光垫基材的抛光***,及
(iii)用该抛光***研磨至少一部分该工件的表面以抛光该工件。
21.权利要求20的方法,其中该工件包含表面层,该表面层包含选自单晶硅、多晶硅、非晶硅、硅化钨、硅化钛、有机聚合物、钨、铜、钛、金属氧化物、金属氮化物及其组合的材料。
22.权利要求20的方法,其中该抛光***为进一步包含抛光组合物的化学机械抛光***。
23.权利要求20的方法,其中该方法进一步包括原位检测抛光终点。
24.一种包含聚合物的抛光垫基材,其中该聚合物具有附在该聚合物链上的至少一种亲水性单元及至少一种疏水性单元。
25.权利要求24的抛光垫基材,其中该聚合物为热塑性聚合物或热固性聚合物。
26.权利要求25的抛光垫基材,其中该热塑性聚合物或热固性聚合物选自聚氨酯、聚烯烃、聚乙烯醇、聚醋酸乙烯酯、聚碳酸酯、聚丙烯酸、聚丙烯酰胺、聚乙烯、聚丙烯、尼龙、碳氟化合物、聚酯、聚醚、聚酰胺、聚酰亚胺、聚四氟乙烯、聚醚醚酮、其共聚物及其组合。
27.权利要求26的抛光垫基材,其中该热塑性聚合物或热固性聚合物选自聚氨酯及聚烯烃。
28.权利要求24的抛光垫基材,其中该抛光垫具有的表面能为34mN/m或更低。
29.权利要求24的抛光垫基材,其中该亲水性单元选自酯、醚、丙烯酸、丙烯酰胺、酰胺、酰亚胺、乙烯醇、醋酸乙烯酯、丙烯酸酯、甲基丙烯酸酯、砜、氨基甲酸酯、氯乙烯、醚醚酮、碳酸酯、及其低聚物及组合。
30.权利要求24的抛光垫基材,其中该亲水性单元为氨基甲酸酯。
31.权利要求24的抛光垫基材,其中该疏水性单元选自碳氟化合物、四氟乙烯、氟乙烯、硅氧烷、二甲基硅氧烷、丁二烯、乙烯、烯烃、苯乙烯、丙烯、及其低聚物及组合。
32.权利要求24的抛光垫基材,其中该疏水性单元为碳氟化合物或硅氧烷。
33.权利要求24的抛光垫基材,其中该至少一种亲水性单元及该至少一种疏水性单元附在该聚合物链的末端重复单元。
34.权利要求24的抛光垫基材,其中该抛光垫基材为实心、无孔抛光垫基材。
35.权利要求24的抛光垫基材,其中该抛光垫基材具有该共聚物的最大理论密度的90%或更高的密度。
36.权利要求24的抛光垫基材,其中该抛光垫基材为多孔抛光垫基材。
37.权利要求36的抛光垫基材,其中该抛光垫基材具有该共聚物的最大理论密度的70%或更低的密度。
38.权利要求36的抛光垫基材,其中该抛光垫基材具有的空隙体积为75%或更低。
39.权利要求24的抛光垫基材,其中该抛光垫基材为抛光层。
40.权利要求39的抛光垫基材,其中该抛光层进一步包括凹槽。
41.权利要求24的抛光垫基材,其中该抛光垫基材为副垫。
42.权利要求24的抛光垫基材,其中该抛光垫基材进一步包含光学透射区。
43.权利要求42的抛光垫基材,其中该光学透射区在190nm至3500nm之间的一个或多个波长处具有的透光率为至少10%。
44.权利要求42的抛光垫基材,其中该光学透射区包含具有附在该聚合物链上的至少一种亲水性单元及至少一种疏水性单元。
45.权利要求24的抛光垫基材,其中该抛光垫基材进一步包含研磨颗粒。
46.权利要求45的抛光垫基材,其中该研磨颗粒包含选自氧化铝、氧化硅、氧化钛、氧化铈、氧化锆、氧化锗、氧化镁、其共形成产物及其组合的金属氧化物。
47.一种抛光工件的方法,其包括
(i)提供待抛光的工件,
(ii)将该工件接触包含权利要求24的抛光垫基材的抛光***,及
(iii)用抛光***研磨至少一部分该工件的表面以抛光该工件。
48.权利要求47的方法,其中该工件包括表面层,该表面层包含选自单晶硅、多晶硅、非晶硅、硅化钨、硅化钛、有机聚合物、钨、铜、钛、金属氧化物、金属氮化物及其组合的材料。
49.权利要求47的方法,其中该抛光***为进一步包含抛光组合物的化学机械抛光***。
50.权利要求47的方法,其中该方法进一步包括原位检测抛光终点。
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-
2005
- 2005-03-01 TW TW094105985A patent/TWI276507B/zh not_active IP Right Cessation
- 2005-03-14 KR KR1020067019555A patent/KR100986935B1/ko active IP Right Grant
- 2005-03-14 WO PCT/US2005/008412 patent/WO2005099963A1/en active Application Filing
- 2005-03-14 JP JP2007505002A patent/JP4955535B2/ja not_active Expired - Fee Related
- 2005-03-14 CN CNB2005800083520A patent/CN100562402C/zh not_active Expired - Fee Related
- 2005-03-21 MY MYPI20051219A patent/MY136726A/en unknown
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CN106903596A (zh) * | 2017-01-23 | 2017-06-30 | 安徽禾臣新材料有限公司 | Tft减薄抛光用吸附垫 |
CN106903596B (zh) * | 2017-01-23 | 2018-06-19 | 安徽禾臣新材料有限公司 | Tft减薄抛光用吸附垫 |
CN116000782A (zh) * | 2022-12-27 | 2023-04-25 | 昂士特科技(深圳)有限公司 | 用于金属合金cmp的化学机械抛光组合物 |
CN116000782B (zh) * | 2022-12-27 | 2023-09-19 | 昂士特科技(深圳)有限公司 | 用于金属合金cmp的化学机械抛光组合物 |
WO2024139039A1 (zh) * | 2022-12-27 | 2024-07-04 | 昂士特科技(深圳)有限公司 | 用于金属合金cmp的化学机械抛光组合物 |
Also Published As
Publication number | Publication date |
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CN100562402C (zh) | 2009-11-25 |
JP2007531275A (ja) | 2007-11-01 |
KR100986935B1 (ko) | 2010-10-08 |
MY136726A (en) | 2008-11-28 |
JP4955535B2 (ja) | 2012-06-20 |
US20050215179A1 (en) | 2005-09-29 |
TW200539986A (en) | 2005-12-16 |
TWI276507B (en) | 2007-03-21 |
KR20060127220A (ko) | 2006-12-11 |
WO2005099963A1 (en) | 2005-10-27 |
US7059936B2 (en) | 2006-06-13 |
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