CN1919961A - Heat interfacial material and method for making the same - Google Patents
Heat interfacial material and method for making the same Download PDFInfo
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- CN1919961A CN1919961A CN 200510036904 CN200510036904A CN1919961A CN 1919961 A CN1919961 A CN 1919961A CN 200510036904 CN200510036904 CN 200510036904 CN 200510036904 A CN200510036904 A CN 200510036904A CN 1919961 A CN1919961 A CN 1919961A
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- heat interfacial
- interfacial material
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Abstract
The invention provides the heat interfacial material, comprising a basis material and many carbon nanometer tubes. On the surface of carbon nanometer tubes there are many magnetic particles. The carbon nanometer tubes are orientation arrangement in basis material. The invention also provides the preparing method.
Description
[technical field]
The present invention relates to a kind of heat interfacial material, relate in particular to a kind of heat interfacial material and preparation method thereof with carbon nanotube.
[background technology]
In recent years, along with the fast development of semiconducter device integrated technique, the integrated degree of semiconducter device is more and more higher, and that device volume becomes is more and more littler, and its heat radiation becomes a more and more important problem, and its requirement to heat radiation is also more and more higher.In order to satisfy these needs, various radiating modes are by a large amount of utilizations, as utilize fan to dispel the heat, modes such as water-cooled auxiliary heat dissipation and heat pipe heat radiation, and obtain certain radiating effect, but because the contact interface and the unfairness of scatterer and semiconductor integrated device, generally be in contact with one another only less than 2% area, there is not the ideal contact interface, therefore fundamentally greatly influenced semiconducter device and carried out heat passage effect to scatterer, the exposure level that the higher heat interfacial material of increase by one thermal conductivity increases the interface between the contact interface of scatterer and semiconducter device just seems very necessary.
Traditional heat interfacial material is that the particles dispersed that some thermal conductivitys are higher forms matrix material in macromolecular material, as graphite, boron nitride, silicon oxide, aluminum oxide, silver or other metal etc.The heat conductivility of this kind material depends on the character of polymer support to a great extent.Wherein with grease, phase change material be the matrix material of carrier when using serve as because of it liquid can be with the thermal source surface infiltration so thermal contact resistance be less, and be that the thermal contact resistance of matrix material of carrier is just bigger with silica gel and rubber.The thermal conductivity that a common defects of these materials is whole materials is smaller, representative value is 1 watt of/meter Kelvin (W/mK), this more and more can not adapt to the demand of the raising of semiconductor integrated degree to heat radiation, and the content of heat conduction particle makes the thermal conductivity that particle and particle are in contact with one another as far as possible can increase whole matrix material in the increase polymer support, therefore can reach 4-8W/mK as some special boundary material, but when the content of heat conduction particle in the polymer support is increased to a certain degree, can make polymkeric substance lose required performance, as grease meeting hardening, thereby effect of impregnation may meeting variation, rubber also can hardening, thereby lose snappiness, this all can make the heat interfacial material performance reduce greatly.
For improving the performance of heat interfacial material, improve its thermal conductivity, utilize in the prior art and fill nano level high thermal conductivity material, the material that has the excellent heat conductivity performance as nano-silver powder, diamond powder and nano carbon microsphere etc.Especially how research is used for carbon nanotube heat interfacial material and gives full play to its good thermal conductivity becoming an important directions that improves the heat interfacial material performance.
A kind of heat interfacial material that utilizes the carbon nanotube thermal conduction characteristic is arranged in the prior art, carbon nanotube mixed in the polymer materials strike up partnership, make heat interfacial material by press moulding mode then, the area of these heat interfacial material two heat-transfer surfaces is unequal, wherein the area of the heat-transfer surface that contacts with scatterer can help radiator heat-dissipation like this greater than the area of the heat-transfer surface that contacts with thermal source.But, the heat interfacial material that this method is made, the carbon nanotube chaotic is arranged in the polymer materials, its homogeneity that distributes in polymer materials is more difficult to get to be guaranteed, thereby heat conducting homogeneity also is affected, and do not make full use of the advantage of the vertical heat conduction of carbon nanotube, influence the heat conductivility of heat interfacial material.
Prior art also discloses a kind of method for preparing the array carbon nano tube thermal interface structure.This method immerses capacity plate antenna and comprises in the thermoplastic polymer slurry of chaotic distribution carbon nanotube, and the dull and stereotyped spacing of control capacittance is also taken out; By forming electric field for the capacity plate antenna making alive, the carbon nanotube of described capacity plate antenna is aligned in the thermoplastic polymer slurry; Promptly become thermal interface structure with taking out behind the described slurry curing.
In view of this, provide a kind of heat interfacial material and preparation method thereof real for necessary with high thermal conductivity coefficient.
[summary of the invention]
Below, will a kind of heat interfacial material be described with some embodiment.
And a kind of method of preparing heat interfacial material is described by these embodiment.
For realizing foregoing, a kind of heat interfacial material is provided, it comprises: a body material and a plurality of carbon nanotube, described a plurality of carbon nanotubes are distributed in the described body material, and described a plurality of carbon nano tube surface has magnetic particle.
And, a kind of method of preparing heat interfacial material is provided, it comprises the steps: at first, and a plurality of carbon nanotubes are provided; Secondly, form magnetic particle in described a plurality of carbon nano tube surface; Then, described a plurality of carbon nanotubes with magnetic particle are dispersed in the body material; At last, solidify described body material, form heat interfacial material.
Carbon nano tube surface is formed with magnetic particle in the heat interfacial material of the technical program, and this magnetic particle has excellent heat conductivity, helps further improving the heat conductivility of described heat interfacial material.In addition, can change the orientation of described carbon nanotube by the magnetic field that is added to described heat interfacial material, the direction that described carbon nanotube is conducted heat on demand aligns in described body material, make vertical thermal conduction characteristic of carbon nanotube be utilized, thereby can obtain having the heat interfacial material of high thermal conductivity coefficient.
[description of drawings]
Fig. 1 is the synoptic diagram of heat interfacial material among the technical program embodiment.
Fig. 2 is the preparation flow synoptic diagram of heat interfacial material among the technical program embodiment.
Fig. 3 is the synoptic diagram of carbon nano tube array grows among the technical program embodiment.
Fig. 4 is the synoptic diagram that carbon nano tube surface forms magnetic particle among the technical program embodiment.
Fig. 5 is the enlarged diagram of part shown in the IV among Fig. 4.
Fig. 6 is dispersed in the synoptic diagram of body material for carbon nanotube among the technical program embodiment.
Fig. 7 is for aligning the synoptic diagram of a plurality of carbon nanotubes among the technical program embodiment.
[embodiment]
Below in conjunction with accompanying drawing the technical program is described in further detail.
See also Fig. 1 and Fig. 5, the technical program provides a kind of heat interfacial material 100, it comprises a body material 30 and the carbon nano pipe array 20 that aligns in described body material 30, the carbon nano tube surface of described carbon nano pipe array 20 has magnetic particle 22.
Described body material 30 comprises silica gel series, paraffin wax, polyethylene glycol, polyester, epoxy resin series, anoxic glue series or acryl glue series.
The material of described magnetic particle 22 comprises magnetic metals such as iron, cobalt, nickel.
See also Fig. 1 and Fig. 2, the technical program also provides a kind of method of preparing heat interfacial material, and it comprises the steps:
Step (a) provides a plurality of carbon nanotubes; Step (b) forms magnetic particle in described a plurality of carbon nano tube surface; Step (c) is dispersed in described a plurality of carbon nanotubes with magnetic particle in one body material; Step (d) is solidified described body material, forms heat interfacial material.
See also Fig. 3 to Fig. 6, the technical program is elaborated to each step in conjunction with the embodiments.
Step (a) provides a plurality of carbon nanotubes 21.One conductive substrates 10 at first is provided, on described conductive substrates 10, forms the carbon nano pipe array 20 that a plurality of carbon nanotubes 21 are formed then.Described conductive substrates 10 comprises conducting glass substrate, metal substrate or has the glass substrate of metal conducting layer.The formation method of described carbon nano pipe array 20 comprises chemical Vapor deposition process, plasma-assisted chemical vapour deposition method, the auxiliary hot filament CVD of plasma or print process.Adopt chemical Vapor deposition process in the present embodiment, at first on conductive substrates 10, form catalyzer, at high temperature feed carbon source gas then to form carbon nano pipe array 20.Described catalyzer comprises transition metal such as iron, nickel, cobalt, palladium.Described carbon source gas bag is drawn together methane, ethene, propylene, acetylene, methyl alcohol and ethanol etc.Concrete grammar covers the thick iron film of one deck 5 nanometers (nm) (figure does not show), and anneals under 300 ℃ of conditions in air for being conductive substrates 10 with the conducting glass substrate on conductive substrates 10; In chemical vapor deposition chamber body (Chemical VaporDeposition Chamber), be carbon source gas with ethene under 700 ℃ of conditions then, form carbon nano pipe arrays 20 in described conductive substrates 10.
Step (b) forms magnetic particle 22 on described a plurality of carbon nanotubes 21 surfaces.The material of described magnetic particle 22 comprises magnetic metals such as iron, cobalt, nickel.For described magnetic particle 22 being formed at described a plurality of carbon nanotube 21 surfaces, as working electrode, form magneticmetals on carbon nanotube 21 surfaces of carbon nano pipe array 20 with the conductive substrates that is formed with carbon nano pipe array 20 10 of step (a) preparation by the three-pole electrochemical reaction.In the present embodiment with iron as magnetic particle 22.Concrete grammar is, as working electrode, is that material as counter electrode 60 and with silver/silver chloride (Ag/AgCl) be material as reference electrode 70 with platinum (Pt) with the described conductive substrates 10 that is formed with carbon nano pipe array 20.Described working electrode, counter electrode 60 and reference electrode 70 are placed the electrolytic solution 50 of three-pole electrolyzer 40.It is the iron nitrate solution of 0.00001～1.0 mol (mol/L) that electrolytic solution 50 can adopt concentration, and selecting concentration in the present embodiment for use is the iron nitrate solution of 0.01mol/L.Pass through electrochemical reducting reaction, with the iron ion in the iron nitrate solution at carbon nanotube 21 surface reductions of described carbon nano pipe array 20 for how the meter level iron granules is as magnetic particle 22, as shown in Figure 5, described magnetic particle 22 is attached on described carbon nanotube 21 surfaces.Certainly, in other embodiments, also can adopt solution such as ferric sulfate, Xiao Suangu or nickelous nitrate as electrolytic solution, and the metal ion of magnetic metals such as iron, cobalt, nickel is reduced to described carbon nanotube 21 surfaces.
Step (c) is dispersed in described a plurality of carbon nanotubes 21 with magnetic particle 22 in the body material 30.Described body material 30 comprises silica gel series, paraffin wax, polyethylene glycol, polyester, epoxy resin series, anoxic glue series or acryl glue series.In the present embodiment, described body material 30 is selected paraffin wax for use, will through step (b) handle described how mitron array 20 is peeled off from conductive substrates 10, form a plurality of carbon nanotubes 21 that the surface has magnetic particle 22, and make described a plurality of carbon nanotube 21 uniformly dispersings in described liquid paraffin wax.
Step (d) is solidified described body material, forms heat interfacial material.The described body material that is scattered with a plurality of carbon nanotubes 21 30 is solidified or solidify.In the present embodiment,, promptly form heat interfacial material 100 with the described liquid paraffin wax that is scattered with a plurality of carbon nanotubes 21 cooling curing at room temperature.
See also Fig. 6 and Fig. 7, the method for preparing heat interfacial material that the technical program provides also further comprises, after step (c) is finished, described body material 30 is placed a magnetic field, and described a plurality of carbon nanotube 21 is aligned in body material 30.In the present embodiment, after step (c) is finished, the described liquid paraffin wax that is scattered with a plurality of carbon nanotubes 21 is placed the uniform magnetic field that forms by one first magnetic pole 81 and one second magnetic pole 82, described surface has a plurality of carbon nanotubes 21 of magnetic particle 22 under the magneticaction of described uniform magnetic field, is dispersed in the described liquid paraffin wax with the form of aligning.
Carbon nano tube surface is formed with magnetic particle 22 in the heat interfacial material 100 of the technical program, can change the orientation of described carbon nanotube by the magnetic field that is added to described heat interfacial material 100, the direction that described carbon nanotube is conducted heat on demand aligns in described body material, make vertical thermal conduction characteristic of carbon nanotube be utilized, thereby can obtain having the heat interfacial material of high thermal conductivity coefficient.
Be understandable that, for the person of ordinary skill of the art, can make other various corresponding changes and distortion, and all these changes and distortion all should belong to the protection domain of claim of the present invention according to technical scheme of the present invention and technical conceive.
Claims (14)
1. heat interfacial material, it comprises: a body material and be distributed in a plurality of carbon nanotubes in the described body material, described a plurality of carbon nano tube surface have magnetic particle.
2. heat interfacial material as claimed in claim 1 is characterized in that, described body material comprises silica gel series, paraffin wax, polyethylene glycol, polyester, epoxy resin series, anoxic glue series or acryl glue series.
3. heat interfacial material as claimed in claim 1 is characterized in that, described a plurality of carbon nanotubes form a carbon nano pipe array.
4. heat interfacial material as claimed in claim 1 is characterized in that the material of described magnetic particle comprises iron, cobalt, nickel.
5. as any described heat interfacial material in the claim 1 to 4, it is characterized in that described a plurality of carbon nanotubes align in described body material.
6. method of preparing heat interfacial material, it comprises the steps:
A plurality of carbon nanotubes are provided;
Form magnetic particle in described a plurality of carbon nano tube surface;
Described a plurality of carbon nanotubes with magnetic particle are dispersed in the body material;
Solidify described body material, form heat interfacial material.
7. method of preparing heat interfacial material as claimed in claim 6 is characterized in that, described a plurality of carbon nano tube growths are in a conductive substrates.
8. method of preparing heat interfacial material as claimed in claim 7 is characterized in that, described conductive substrates comprises conducting glass substrate, metal substrate or has the glass substrate of metal conducting layer.
9. method of preparing heat interfacial material as claimed in claim 6 is characterized in that, described a plurality of carbon nanotubes form a carbon nano pipe array.
10. method of preparing heat interfacial material as claimed in claim 9, it is characterized in that the formation method of described carbon nano pipe array comprises chemical Vapor deposition process, plasma-assisted chemical vapour deposition method, the auxiliary hot filament CVD of plasma or print process.
11. method of preparing heat interfacial material as claimed in claim 6 is characterized in that, the material of described magnetic particle comprises iron, cobalt, nickel.
12. method of preparing heat interfacial material as claimed in claim 11 is characterized in that, described magnetic particle is formed at described a plurality of carbon nano tube surface by electrochemical reducing.
13. method of preparing heat interfacial material as claimed in claim 6 is characterized in that, described body material comprises silica gel series, paraffin wax, polyethylene glycol, polyester, epoxy resin series, anoxic glue series or acryl glue series.
14., it is characterized in that described method of preparing heat interfacial material further comprises, applies the action of a magnetic field described a plurality of carbon nanotube is aligned as any described method of preparing heat interfacial material in the claim 6 to 13 in body material.
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| CN 200510036904 CN1919961A (en) | 2005-08-26 | 2005-08-26 | Heat interfacial material and method for making the same |
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| CN 200510036904 CN1919961A (en) | 2005-08-26 | 2005-08-26 | Heat interfacial material and method for making the same |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101959788A (en) * | 2008-02-29 | 2011-01-26 | 富士通株式会社 | Sheet structure, semiconductor device and method of growing carbon structure |
| CN101609802B (en) * | 2009-06-23 | 2011-09-14 | 华中科技大学 | Preparation method of low thermal resistance thermal interface |
| CN105001450A (en) * | 2015-07-09 | 2015-10-28 | 天津大学 | High-directional-thermal-conductivity carbon/polymer composite material and preparation method |
| CN106810719A (en) * | 2017-02-24 | 2017-06-09 | 中国科学院化学研究所 | A kind of hot functional composite material and its preparation method and application |
| CN106832496A (en) * | 2017-01-21 | 2017-06-13 | 郴州市海利微电子科技有限公司 | A kind of LCD Touch-control liquid crystal display screens heat sink material and its preparation method and application |
| CN111607365A (en) * | 2020-06-03 | 2020-09-01 | 彗晶新材料科技(深圳)有限公司 | Flake graphite heat conduction material, preparation method thereof and electronic equipment |
| CN113337253A (en) * | 2021-06-11 | 2021-09-03 | 常州富烯科技股份有限公司 | Heat-conducting gasket and preparation method thereof |
-
2005
- 2005-08-26 CN CN 200510036904 patent/CN1919961A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101959788A (en) * | 2008-02-29 | 2011-01-26 | 富士通株式会社 | Sheet structure, semiconductor device and method of growing carbon structure |
| CN101959788B (en) * | 2008-02-29 | 2017-03-08 | 富士通株式会社 | The growing method of sheet-like structure, semiconductor device and carbon structure |
| CN101609802B (en) * | 2009-06-23 | 2011-09-14 | 华中科技大学 | Preparation method of low thermal resistance thermal interface |
| CN105001450A (en) * | 2015-07-09 | 2015-10-28 | 天津大学 | High-directional-thermal-conductivity carbon/polymer composite material and preparation method |
| CN106832496A (en) * | 2017-01-21 | 2017-06-13 | 郴州市海利微电子科技有限公司 | A kind of LCD Touch-control liquid crystal display screens heat sink material and its preparation method and application |
| CN106810719A (en) * | 2017-02-24 | 2017-06-09 | 中国科学院化学研究所 | A kind of hot functional composite material and its preparation method and application |
| CN106810719B (en) * | 2017-02-24 | 2019-07-16 | 中国科学院化学研究所 | A kind of heat function composite material and preparation method and application |
| CN111607365A (en) * | 2020-06-03 | 2020-09-01 | 彗晶新材料科技(深圳)有限公司 | Flake graphite heat conduction material, preparation method thereof and electronic equipment |
| CN111607365B (en) * | 2020-06-03 | 2021-04-27 | 彗晶新材料科技(深圳)有限公司 | Flake graphite heat conduction material, preparation method thereof and electronic equipment |
| CN113337253A (en) * | 2021-06-11 | 2021-09-03 | 常州富烯科技股份有限公司 | Heat-conducting gasket and preparation method thereof |
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