CN1909243A - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
- Publication number
- CN1909243A CN1909243A CNA2006100938722A CN200610093872A CN1909243A CN 1909243 A CN1909243 A CN 1909243A CN A2006100938722 A CNA2006100938722 A CN A2006100938722A CN 200610093872 A CN200610093872 A CN 200610093872A CN 1909243 A CN1909243 A CN 1909243A
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- Prior art keywords
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- insulating film
- dielectric constant
- high dielectric
- gate insulating
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- 239000004065 semiconductor Substances 0.000 title claims description 78
- 238000000034 method Methods 0.000 title claims description 54
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 claims description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 229910021332 silicide Inorganic materials 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 claims 1
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 238000009751 slip forming Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 37
- 101100204059 Caenorhabditis elegans trap-2 gene Proteins 0.000 description 23
- 229940090044 injection Drugs 0.000 description 23
- 238000002347 injection Methods 0.000 description 23
- 239000007924 injection Substances 0.000 description 23
- 238000005530 etching Methods 0.000 description 15
- 230000000694 effects Effects 0.000 description 14
- 239000007772 electrode material Substances 0.000 description 13
- 230000009931 harmful effect Effects 0.000 description 11
- 230000006866 deterioration Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 229910052785 arsenic Inorganic materials 0.000 description 7
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 238000004151 rapid thermal annealing Methods 0.000 description 7
- 238000001039 wet etching Methods 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 230000001133 acceleration Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229960002050 hydrofluoric acid Drugs 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 230000000630 rising effect Effects 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 241000027294 Fusi Species 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000003139 buffering effect Effects 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 241001232787 Epiphragma Species 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005227457A JP4954508B2 (ja) | 2005-08-05 | 2005-08-05 | 半導体装置 |
JP2005227457 | 2005-08-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1909243A true CN1909243A (zh) | 2007-02-07 |
CN100583451C CN100583451C (zh) | 2010-01-20 |
Family
ID=37700281
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200610093872A Active CN100583451C (zh) | 2005-08-05 | 2006-06-20 | 半导体装置及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (4) | US7579227B2 (zh) |
JP (1) | JP4954508B2 (zh) |
CN (1) | CN100583451C (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104103505A (zh) * | 2013-04-10 | 2014-10-15 | 中芯国际集成电路制造(上海)有限公司 | 栅极的形成方法 |
CN109346408A (zh) * | 2018-10-10 | 2019-02-15 | 武汉新芯集成电路制造有限公司 | Mos晶体管及其形成方法、以及闪存的形成方法 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4954508B2 (ja) * | 2005-08-05 | 2012-06-20 | パナソニック株式会社 | 半導体装置 |
JP2008288364A (ja) * | 2007-05-17 | 2008-11-27 | Sony Corp | 半導体装置および半導体装置の製造方法 |
JP2009295621A (ja) * | 2008-06-02 | 2009-12-17 | Panasonic Corp | 半導体装置及びその製造方法 |
US8258588B2 (en) * | 2009-08-07 | 2012-09-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sealing layer of a field effect transistor |
KR101163224B1 (ko) * | 2011-02-15 | 2012-07-06 | 에스케이하이닉스 주식회사 | 듀얼 폴리게이트 형성방법 및 이를 이용한 반도체소자의 제조방법 |
JP6083930B2 (ja) * | 2012-01-18 | 2017-02-22 | キヤノン株式会社 | 光電変換装置および撮像システム、光電変換装置の製造方法 |
US8779551B2 (en) * | 2012-06-06 | 2014-07-15 | International Business Machines Corporation | Gated diode structure for eliminating RIE damage from cap removal |
US9209298B2 (en) * | 2013-03-08 | 2015-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal-oxide-semiconductor field-effect transistor with extended gate dielectric layer |
EP2843696A1 (en) * | 2013-08-27 | 2015-03-04 | IMEC vzw | A method for dopant implantation of FinFET structures |
KR102167625B1 (ko) * | 2013-10-24 | 2020-10-19 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US10050147B2 (en) * | 2015-07-24 | 2018-08-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR20170080996A (ko) * | 2015-12-31 | 2017-07-11 | 삼성디스플레이 주식회사 | 표시 장치용 박막 트랜지스터 및 이를 포함하는 유기 발광 표시 장치 |
US10784781B2 (en) * | 2017-11-29 | 2020-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transistor having asymmetric threshold voltage, buck converter and method of forming semiconductor device |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0851199A (ja) * | 1994-08-08 | 1996-02-20 | Matsushita Electron Corp | 半導体装置およびその製造方法 |
JP3600476B2 (ja) | 1999-06-30 | 2004-12-15 | 株式会社東芝 | 半導体装置の製造方法 |
JP2001185722A (ja) * | 1999-12-24 | 2001-07-06 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JP4971559B2 (ja) | 2001-07-27 | 2012-07-11 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
TW522570B (en) * | 2001-11-06 | 2003-03-01 | Hannstar Display Corp | Manufacturing method of thin film transistor array substrate and its structure |
JP2003258241A (ja) * | 2002-03-05 | 2003-09-12 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JPWO2004017418A1 (ja) * | 2002-08-15 | 2005-12-08 | 株式会社ルネサステクノロジ | 半導体集積回路装置およびその製造方法 |
JP3980985B2 (ja) | 2002-10-04 | 2007-09-26 | 株式会社東芝 | 半導体装置とその製造方法 |
JP2004172178A (ja) * | 2002-11-18 | 2004-06-17 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
JP2004241755A (ja) * | 2003-01-15 | 2004-08-26 | Renesas Technology Corp | 半導体装置 |
JP4082280B2 (ja) | 2003-05-30 | 2008-04-30 | セイコーエプソン株式会社 | 半導体装置およびその製造方法 |
JP2005064190A (ja) * | 2003-08-11 | 2005-03-10 | Toshiba Corp | 半導体装置及びその製造方法 |
EP1524699B1 (en) | 2003-10-17 | 2012-12-26 | Imec | Method for forming CMOS semiconductor devices having a notched gate insulator and devices thus obtained |
JP3962009B2 (ja) * | 2003-12-05 | 2007-08-22 | 株式会社東芝 | 半導体装置の製造方法 |
US20050121733A1 (en) | 2003-12-09 | 2005-06-09 | Taiwan Semiconductor Manufacturing Co. | Method of forming a semiconductor device with a high dielectric constant material and an offset spacer |
US6929992B1 (en) * | 2003-12-17 | 2005-08-16 | Advanced Micro Devices, Inc. | Strained silicon MOSFETs having NMOS gates with work functions for compensating NMOS threshold voltage shift |
JP4954508B2 (ja) * | 2005-08-05 | 2012-06-20 | パナソニック株式会社 | 半導体装置 |
-
2005
- 2005-08-05 JP JP2005227457A patent/JP4954508B2/ja active Active
-
2006
- 2006-06-20 CN CN200610093872A patent/CN100583451C/zh active Active
- 2006-07-24 US US11/491,260 patent/US7579227B2/en active Active
-
2009
- 2009-07-20 US US12/505,799 patent/US7923764B2/en active Active
-
2011
- 2011-03-01 US US13/037,831 patent/US8253180B2/en active Active
-
2012
- 2012-07-12 US US13/547,913 patent/US8587076B2/en active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104103505A (zh) * | 2013-04-10 | 2014-10-15 | 中芯国际集成电路制造(上海)有限公司 | 栅极的形成方法 |
CN104103505B (zh) * | 2013-04-10 | 2017-03-29 | 中芯国际集成电路制造(上海)有限公司 | 栅极的形成方法 |
CN109346408A (zh) * | 2018-10-10 | 2019-02-15 | 武汉新芯集成电路制造有限公司 | Mos晶体管及其形成方法、以及闪存的形成方法 |
CN109346408B (zh) * | 2018-10-10 | 2022-02-15 | 武汉新芯集成电路制造有限公司 | Mos晶体管及其形成方法、以及闪存的形成方法 |
Also Published As
Publication number | Publication date |
---|---|
US20090278210A1 (en) | 2009-11-12 |
JP4954508B2 (ja) | 2012-06-20 |
US20120273903A1 (en) | 2012-11-01 |
US20070032007A1 (en) | 2007-02-08 |
CN100583451C (zh) | 2010-01-20 |
US7579227B2 (en) | 2009-08-25 |
US20110147857A1 (en) | 2011-06-23 |
US7923764B2 (en) | 2011-04-12 |
US8253180B2 (en) | 2012-08-28 |
JP2007042964A (ja) | 2007-02-15 |
US8587076B2 (en) | 2013-11-19 |
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