CN1890175B - 衍生富勒烯的制造装置及制造方法 - Google Patents
衍生富勒烯的制造装置及制造方法 Download PDFInfo
- Publication number
- CN1890175B CN1890175B CN2004800357884A CN200480035788A CN1890175B CN 1890175 B CN1890175 B CN 1890175B CN 2004800357884 A CN2004800357884 A CN 2004800357884A CN 200480035788 A CN200480035788 A CN 200480035788A CN 1890175 B CN1890175 B CN 1890175B
- Authority
- CN
- China
- Prior art keywords
- soccerballene
- derivative
- fullerene
- mentioned
- manufacturing installation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 title claims abstract description 227
- 229910003472 fullerene Inorganic materials 0.000 title claims abstract description 123
- 238000000034 method Methods 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 80
- 238000009434 installation Methods 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 44
- 239000007789 gas Substances 0.000 claims description 36
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 32
- 125000004429 atom Chemical group 0.000 claims description 29
- 238000009825 accumulation Methods 0.000 claims description 18
- 230000008676 import Effects 0.000 claims description 17
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
- 239000007921 spray Substances 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 3
- 238000011144 upstream manufacturing Methods 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 150000002500 ions Chemical class 0.000 abstract description 37
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 238000009795 derivation Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 9
- 238000005422 blasting Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- -1 soccerballene ion Chemical class 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- 150000001721 carbon Chemical class 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000004821 distillation Methods 0.000 description 3
- 125000004433 nitrogen atom Chemical class N* 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000009514 concussion Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000012770 industrial material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/80—Apparatus for specific applications
- H05B6/806—Apparatus for specific applications for laboratory use
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
- B01J19/122—Incoherent waves
- B01J19/126—Microwaves
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/152—Fullerenes
- C01B32/156—After-treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0873—Materials to be treated
- B01J2219/0879—Solid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0894—Processes carried out in the presence of a plasma
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/12—Processes employing electromagnetic waves
- B01J2219/1203—Incoherent waves
- B01J2219/1206—Microwaves
- B01J2219/1209—Features relating to the reactor or vessel
- B01J2219/1221—Features relating to the reactor or vessel the reactor per se
- B01J2219/1224—Form of the reactor
- B01J2219/1227—Reactors comprising tubes with open ends
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/18—Details relating to the spatial orientation of the reactor
- B01J2219/182—Details relating to the spatial orientation of the reactor horizontal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/10—Process efficiency
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Clinical Laboratory Science (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Carbon And Carbon Compounds (AREA)
- Nitrogen Condensed Heterocyclic Rings (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003404540 | 2003-12-03 | ||
JP404540/2003 | 2003-12-03 | ||
PCT/JP2004/018057 WO2005054127A1 (ja) | 2003-12-03 | 2004-12-03 | 誘導フラーレンの製造装置及び製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1890175A CN1890175A (zh) | 2007-01-03 |
CN1890175B true CN1890175B (zh) | 2010-04-07 |
Family
ID=34650140
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2004800357884A Expired - Fee Related CN1890175B (zh) | 2003-12-03 | 2004-12-03 | 衍生富勒烯的制造装置及制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20070110644A1 (zh) |
JP (1) | JPWO2005054127A1 (zh) |
CN (1) | CN1890175B (zh) |
WO (1) | WO2005054127A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090084501A1 (en) * | 2007-09-27 | 2009-04-02 | Tokyo Electron Limited | Processing system for producing a negative ion plasma |
JP2009184892A (ja) * | 2008-02-08 | 2009-08-20 | Dainippon Screen Mfg Co Ltd | カーボンナノチューブ形成装置およびカーボンナノチューブ形成方法 |
EP2604617A1 (de) | 2011-12-12 | 2013-06-19 | Sika Technology AG | Eisen(III)-Komplexverbindungen als Katalysatoren für Polyurethan-Zusammensetzungen |
CN111675604B (zh) * | 2020-06-28 | 2022-12-20 | 内蒙古碳谷科技有限公司 | 一种真空等离子体修饰富勒烯分子表面的方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004089822A1 (ja) * | 2003-04-07 | 2004-10-21 | Ideal Star Inc. | ガス原子内包フラーレンの製造装置及び製造方法並びにガス原子内包フラーレン |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3729347A1 (de) * | 1986-09-05 | 1988-03-17 | Mitsubishi Electric Corp | Plasmaprozessor |
US5022977A (en) * | 1986-09-29 | 1991-06-11 | Nippon Telegraph And Telephone Corporation | Ion generation apparatus and thin film forming apparatus and ion source utilizing the ion generation apparatus |
JPH01309957A (ja) * | 1988-06-06 | 1989-12-14 | Mitsubishi Electric Corp | 薄膜形成装置 |
US5132105A (en) * | 1990-02-02 | 1992-07-21 | Quantametrics, Inc. | Materials with diamond-like properties and method and means for manufacturing them |
US5772760A (en) * | 1991-11-25 | 1998-06-30 | The University Of Chicago | Method for the preparation of nanocrystalline diamond thin films |
US5279669A (en) * | 1991-12-13 | 1994-01-18 | International Business Machines Corporation | Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions |
JPH06166509A (ja) * | 1992-11-27 | 1994-06-14 | Mitsubishi Kasei Corp | ヘテロ原子含有フラーレン類の製造方法 |
JP2644958B2 (ja) * | 1993-04-02 | 1997-08-25 | 株式会社日立製作所 | イオン源装置およびそのイオン源装置を備えたイオン打ち込み装置 |
TW296534B (zh) * | 1993-12-17 | 1997-01-21 | Tokyo Electron Co Ltd | |
US5393572A (en) * | 1994-07-11 | 1995-02-28 | Southwest Research Institute | Ion beam assisted method of producing a diamond like carbon coating |
JPH1081971A (ja) * | 1996-07-10 | 1998-03-31 | Suzuki Motor Corp | 高分子基材へのプラズマCVDによるSiC薄膜形成方法及び装置 |
US6335535B1 (en) * | 1998-06-26 | 2002-01-01 | Nissin Electric Co., Ltd | Method for implanting negative hydrogen ion and implanting apparatus |
JP3353068B2 (ja) * | 2000-08-14 | 2002-12-03 | 独立行政法人産業技術総合研究所 | 炭素骨格の一部がホウ素及び窒素で置換されたヘテロフラーレンの製造方法 |
FR2815954B1 (fr) * | 2000-10-27 | 2003-02-21 | Commissariat Energie Atomique | Procede et dispositif de depot par plasma a la resonance cyclotron electronique de nanotubes de carbone monoparois et nanotubes ainsi obtenus |
US6454912B1 (en) * | 2001-03-15 | 2002-09-24 | Micron Technology, Inc. | Method and apparatus for the fabrication of ferroelectric films |
US6876154B2 (en) * | 2002-04-24 | 2005-04-05 | Trikon Holdings Limited | Plasma processing apparatus |
US20040112543A1 (en) * | 2002-12-12 | 2004-06-17 | Keller John H. | Plasma reactor with high selectivity and reduced damage |
-
2004
- 2004-12-03 US US10/581,441 patent/US20070110644A1/en not_active Abandoned
- 2004-12-03 JP JP2005515997A patent/JPWO2005054127A1/ja active Pending
- 2004-12-03 CN CN2004800357884A patent/CN1890175B/zh not_active Expired - Fee Related
- 2004-12-03 WO PCT/JP2004/018057 patent/WO2005054127A1/ja active Application Filing
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004089822A1 (ja) * | 2003-04-07 | 2004-10-21 | Ideal Star Inc. | ガス原子内包フラーレンの製造装置及び製造方法並びにガス原子内包フラーレン |
Non-Patent Citations (3)
Title |
---|
B.Pietzak. et al..Properties of endohedral [email protected] 5-6.1998,36(5-6),613-615. |
B.Pietzak. et al..Properties of endohedral [email protected] 5-6.1998,36(5-6),613-615. * |
R. Hatakeyama, et al..Formation of alkali- and Si-endohedral fullerenesbasedonplasma techology.Electrochemical Society Proceedings2001-11.2001,2001-11314-348. * |
Also Published As
Publication number | Publication date |
---|---|
WO2005054127A1 (ja) | 2005-06-16 |
CN1890175A (zh) | 2007-01-03 |
US20070110644A1 (en) | 2007-05-17 |
JPWO2005054127A1 (ja) | 2008-04-17 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: HIROYUKI KANEKO Free format text: FORMER OWNER: IDEAL STAR INC. Effective date: 20111103 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111103 Address after: Fukuoka, Japan Patentee after: KANEKO HIROYUKI Address before: Miyagi Prefecture in Japan Patentee before: Ideal Star Inc. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100407 Termination date: 20141203 |
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