CN1885488A - Top electrode, plasma processing device and method - Google Patents
Top electrode, plasma processing device and method Download PDFInfo
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- CN1885488A CN1885488A CNA2006100930881A CN200610093088A CN1885488A CN 1885488 A CN1885488 A CN 1885488A CN A2006100930881 A CNA2006100930881 A CN A2006100930881A CN 200610093088 A CN200610093088 A CN 200610093088A CN 1885488 A CN1885488 A CN 1885488A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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Abstract
The present invention provides one kind of upper electrode in cooled structure with excellent temperature control performance. The upper electrode has an electrode plate configured in parallel with the base, one temperature regulating plate connected to the middle part of the electrode plate and with inside heat transferring medium flow path, and one temperature regulating block connected to the periphery of the electrode plate and with inside heat transferring medium flow path. The temperature regulating plate connected to the middle part of the electrode plate performs heat exchange with the electrode plate and cools the electrode plate via transferring the cold of the refrigerant flowing inside the heat transferring medium flow path to the electrode plate.
Description
Technical field
The present invention relates to upper electrode, plasma processing apparatus and method of plasma processing, in detail, relate in the manufacture process of flat-panel monitor (FPD) etc. the upper electrode, plasma processing apparatus and the method for plasma processing that when the processed substrate of plasma treatment glass substrate etc., use with this upper electrode.
Background technology
In the manufacture process of FPD, the large-size glass substrate as processed substrate is carried out the plasma treatment of dry ecthing etc.For example, configuration pair of parallel plate electrode (upper electrode and lower electrode) in the chamber of plasma processing apparatus, after glass substrate being positioned on the pedestal (substrate-placing platform) that works as lower electrode, it is indoor to handle the gas introduction chamber, simultaneously High frequency power is applied at least one of electrode, between electrode, form high-frequency electric field, utilize this high-frequency electric field to form the plasma of handling gas, glass substrate is implemented plasma treatment.
In plasma processing apparatus, because upper electrode is directly exposed in the plasma, in plasma treatment, the temperature of upper electrode uprises.Thus, propose in upper electrode, to be formed with the heat transfer medium stream, cold-producing medium is circulated in this heat transfer medium stream, the plasma processing apparatus (with reference to patent documentation 1) of cooling upper electrode.
In addition, the main device that is treated to purpose with semiconductor wafer is proposed, heat transfer medium stream in the upper electrode is made warp architecture, by considering the flow direction of cold-producing medium, improve temperature controlled precision, improve the plasma processing apparatus (with reference to patent documentation 2) of all temperature homogeneities of upper electrode.
[patent documentation 1] Japan Patent spy opens clear 63-284820 communique (Fig. 1 etc.)
[patent documentation 2] Japan Patent spy opens 2004-342704 communique (Fig. 2 etc.)
Summary of the invention
As mentioned above, in existing plasma processing apparatus, make great efforts to make its equalizing temperature, to improve processing accuracy by the cooling upper electrode.Yet the FPD situation of glass substrate, size is more much bigger than semiconductor wafer, and particularly in recent years, glass substrate has the tendency of maximization, the essential glass substrate of handling for example long edge lengths above 2m.Because like this, corresponding with glass substrate, upper electrode also maximizes, and it is difficult making its equalizing temperature.For example, the central portion of upper electrode rises easily than periphery temperature, and this temperature difference becomes photothermal poor, and is influential to the etching precision on the glass substrate, is the reason that causes the inhomogeneous grade of etching.
In addition, usually under the situation of carrying out etch processes, on the surface of the electrostatic chuck that forms on pedestal top several places gas squit hole is set,, reaches the purpose of the equalizing temperature that makes processed substrate by from authorized pressure thermal medium gas being imported the rear side of processed substrate here.But, different with the situation of semiconductor wafer and since may not be easily with FPD with large-size glass substrate all be controlled at even temperature, so it is irregular to produce temperature in the face of glass substrate, damage the uniformity of processing.In this case,, have the part difference, utilize its radiant heat, can make the interior equalizing temperature of face of glass substrate by the temperature that makes upper electrode with above-mentioned opposite.
Like this, there is the FPD of maximization tendency to use in the plasma processing apparatus of glass substrate,, requires to control the temperature of upper electrode than existing high precision for guaranteeing the precision of plasma treatment in processing.Therefore, problem of the present invention provides a kind of upper electrode with adjustment structure of the controlled excellence of temperature.
For addressing the above problem, a first aspect of the present invention provides a kind of upper electrode, and it is in the process chamber of plasma processing apparatus, be used for mounting table subtend configuration with the processed substrate of mounting, be used for and above-mentioned mounting table between produce to handle the plasma of gas, it is characterized in that having:
Be formed with the battery lead plate that the processed substrate that is used on above-mentioned mounting table sprays a plurality of ejiction openings of above-mentioned processing gas; With
Have the heat transfer medium stream that makes heat transfer medium circulation usefulness in inside, be configured in the top of above-mentioned battery lead plate, regulate a plurality of adjustment bodies of the temperature of above-mentioned battery lead plate.
In above-mentioned first aspect, preferably have:
Be used to regulate part or all the first adjustment body of temperature in zone beyond the above-mentioned battery lead plate periphery; With
Be used to regulate the second adjustment body of temperature in the periphery zone of above-mentioned battery lead plate.
In this case, preferably, carry out independent control in the temperature of the heat transfer medium of the above-mentioned first adjustment body internal circulation and the heat transfer medium temperature that flows through in the above-mentioned second adjustment body inside.
A second aspect of the present invention provides a kind of upper electrode, its in the process chamber of plasma processing apparatus, with the configuration of the mounting table subtend of the processed substrate of mounting, be used for and above-mentioned mounting table between produce the plasma of handling gas, it is characterized in that having:
Be formed with the battery lead plate that the processed substrate that is used on above-mentioned mounting table sprays a plurality of ejiction openings of above-mentioned processing gas; With
Have the heat transfer medium stream that makes heat transfer medium circulation usefulness in inside, be configured in the top of above-mentioned battery lead plate, regulate the temperature adjusting plate of the temperature of above-mentioned battery lead plate.
In above-mentioned second aspect, preferably on the said temperature adjustable plate, be formed with and be used to a plurality of openings that above-mentioned processing gas is passed through.In addition, preferably on the top of said temperature adjustable plate, be formed with and be used to make the processing gaseous diffusion of above-mentioned processing gaseous diffusion to use the space.In this case, preferably in above-mentioned processing gaseous diffusion with in the space, a plurality of gas through flow holes that have with the opening staggered positions configuration of said temperature adjustable plate are set, promote the gas diffusion plate of above-mentioned processing gaseous diffusion.
In addition, in second aspect, preferably have a plurality of said temperature adjustable plates, can carry out independent control temperature at the heat transfer medium of each temperature adjusting plate internal circulation.
A third aspect of the present invention provides a kind of upper electrode, its in the process chamber of plasma processing apparatus, with the configuration of the mounting table subtend of the processed substrate of mounting, be used for and above-mentioned mounting table between produce the plasma of handling gas, it is characterized in that having:
Be formed with the battery lead plate that the processed substrate that is used on above-mentioned mounting table sprays a plurality of ejiction openings of above-mentioned processing gas;
Have the heat transfer medium stream that makes heat transfer medium circulation usefulness in inside, regulate the temperature adjusting plate of the temperature of above-mentioned battery lead plate central portion; With
Have the heat transfer medium stream that makes heat transfer medium circulation usefulness in inside, regulate the adjustment block of the temperature of above-mentioned battery lead plate periphery.
In the third aspect, preferably on the said temperature adjustable plate, be formed with a plurality of openings that above-mentioned processing gas is passed through.In addition, said temperature is regulated block, and is preferred: form in the mode that covers the said temperature adjustable plate, have and the said temperature adjustable plate between be formed with and make processing gaseous diffusion that above-mentioned processing gaseous diffusion uses recess with the space.In this case, preferably the gas diffusion plate have a plurality of gas through flow holes, to promote above-mentioned processing gaseous diffusion is set in the space in above-mentioned processing gaseous diffusion.In addition, the opening staggered positions of the gas through flow hole of preferred above-mentioned gas diffuser plate and said temperature adjustable plate ground configuration.
In the third aspect, preferably, carry out independent control in the temperature of the heat transfer medium of said temperature adjustable plate internal circulation and the temperature of regulating the heat transfer medium of block internal circulation at said temperature.
In the third aspect, can have a plurality of said temperature adjustable plates.In this case, the temperature at the heat transfer medium of a plurality of said temperature adjustable plate internal circulations is carried out independent control.
A fourth aspect of the present invention provides a kind of plasma processing apparatus, it is characterized in that: have the described upper electrode of either side in above-mentioned first～third aspect.
A fifth aspect of the present invention provides a kind of method of plasma processing, it is characterized in that: utilize to have above-mentioned first aspect, to in the temperature of the heat transfer medium of the above-mentioned first adjustment body internal circulation with carry out the plasma processing apparatus of the upper electrode of independent control in the temperature of the heat transfer medium of the above-mentioned second adjustment body internal circulation, on one side to carrying out independent control in the temperature of the heat transfer medium of the above-mentioned first adjustment body internal circulation with in the temperature of the heat transfer medium of the above-mentioned second adjustment body internal circulation, on processed substrate carry out plasma treatment on one side.
A sixth aspect of the present invention provides a kind of method of plasma processing, it is characterized in that: utilize have above-mentioned second aspect, to carry out the plasma processing apparatus of the upper electrode of independent control in the temperature of the heat transfer medium of a plurality of said temperature adjustable plate internal circulations, on one side the temperature at the heat transfer medium of a plurality of said temperature adjustable plate internal circulations is carried out independent control, on processed substrate carry out plasma treatment on one side.
A seventh aspect of the present invention provides a kind of method of plasma processing, it is characterized in that: utilize have the above-mentioned third aspect, to regulating the upper electrode plasma processing apparatus that the temperature of the heat transfer medium of block internal circulation is carried out independent control in the temperature of the heat transfer medium of said temperature adjustable plate internal circulation with at said temperature, on one side to carrying out independent control in the temperature of the heat transfer medium of said temperature adjustable plate internal circulation with in the temperature that said temperature is regulated the heat transfer medium of block internal circulation, on processed substrate carry out plasma treatment on one side.
The method of plasma processing of either side preferably carries out etch processes to handled object in above-mentioned the 5th～the 7th aspect.
A eighth aspect of the present invention provides a kind of control program, it is characterized in that: move on computers, when carrying out, control above-mentioned plasma processing apparatus, carry out the method for plasma processing of either side in above-mentioned the 5th～the 7th aspect.
A ninth aspect of the present invention provides a kind of computer-readable storage medium, store the control program of operation on computers, it is characterized in that: above-mentioned control program is controlled above-mentioned plasma processing apparatus when carrying out, carry out the method for plasma processing of either side in above-mentioned the 5th～the 7th aspect.
Adopt the present invention, owing to constitute and have: a plurality of adjustment bodies that have the temperature top heat transfer medium stream, that be configured in battery lead plate, the adjusting battery lead plate that makes heat transfer medium circulation usefulness in inside, so temperature in the face of control electrode plate accurately, in addition, enlarge the temperature controlled degree of freedom.Like this, shown in the embodiment, the controlled height of temperature in the face of processed substrate produces countermeasure to processing irregular (inhomogeneities of processing) such as etch processes easily as described later.
Description of drawings
Fig. 1 is the sectional view of the schematic configuration of the plasma-etching apparatus of expression an embodiment of the present invention
Fig. 2 is the plane graph of temperature adjusting plate
Fig. 3 is the sectional view of the schematic configuration of the plasma-etching apparatus of another execution mode of expression
Fig. 4 is the curve chart of the passing of the variations in temperature of expression embodiment 1
Fig. 5 is the curve chart of the passing of the variations in temperature of expression comparative example 1
Fig. 6 is the curve chart of the passing of the variations in temperature of expression embodiment 2
Fig. 7 is the curve chart of the passing of the variations in temperature of expression comparative example 2
Fig. 8 is the curve chart of the passing of the variations in temperature of expression embodiment 3
Fig. 9 is the curve chart of the passing of the variations in temperature of expression comparative example 3
Figure 10 is the figure that is used to illustrate the configuration example of temperature adjusting plate
Figure 11 is the routine figure of another configuration that is used to illustrate temperature adjusting plate
Figure 12 is the routine figure of another configuration that is used to illustrate temperature adjusting plate
Symbol description
1 plasma-etching apparatus, 2 chambers
3 insulation boards, 4 pedestals
5 electrostatic chucks, 6 electrodes
8 dielectric material films, 11 upper electrodes
12 insulating elements, 13 battery lead plates
13a gas squit hole 14 temperature adjusting plates
15 heat transfer medium streams, 16 heat transfer medium streams
17 adjustment blocks, 18 gaseous diffusion space parts
20 connecting portions, 45 exhaust apparatus
50 process controllers
Embodiment
Below, with reference to accompanying drawing, preferred implementation of the present invention is described.
Fig. 1 is the sectional view of the plasma-etching apparatus of expression one embodiment of the present invention.As shown in Figure 1, plasma-etching apparatus 1 constitute make rectangle as the FPD of handled object with substrate G such as glass substrates on, carry out etched capacitive coupling type parallel flat plasma-etching apparatus.Here, can list LCD (LCD), light-emitting diode (LED) display, electroluminescence (Electro Luminescence:EL) display, fluorescent display tube (Vacuum Fluorescent Display:VFD), plasma display panel (PDP) etc. as FPD.In addition, processing unit of the present invention is not to only limit to plasma-etching apparatus.
This plasma Etaching device 1 has the chamber that is configured as square tube shape 2 that is carried out the aluminium formation of pellumina processing (anodized) by for example surface.Be provided with the insulation board 3 of the corner post shape that constitutes by insulating material on the bottom in this chamber 2, on this insulation board 3, be provided with the pedestal 4 that is used for mounting substrate G.Pedestal 4 as substrate-placing platform has pedestal basis material 4a and the electrostatic chuck 5 that is located on the pedestal basis material 4a.In addition, chamber 2 and pedestal basis material 4a ground connection.
Periphery at pedestal basis material 4a is formed with dielectric film 7, in addition, the dielectric material film 8 of ceramic sputtered films of bismuth etc. is set on electrostatic chuck 5.Electrostatic chuck 5 by with direct voltage from DC power supply 26, via supply lines 27, be applied on the electrode of in dielectric material film 8, burying underground 6, for example utilize Coulomb force Electrostatic Absorption substrate G.
On above-mentioned insulation board 3 and pedestal basis material 4a, above-mentioned electrostatic chuck 5, be formed with the gas passage 9 that connects them.By this gas passage 9, with heat-conducting gas for example He gas etc. supply with the back side as the substrate G of handled object.
Promptly, the heat-conducting gas of supplying with in the gas passage 9, by the 9a of gas accumulation portion that on the border of pedestal basis material 4a and electrostatic chuck 5, forms, in case in the horizontal direction after the diffusion, by the gas supply hole 9b that in electrostatic chuck 5, forms, from the surface of electrostatic chuck 5 to the rear side ejection of substrate G.Like this, the cold and hot of pedestal 4 is passed on the substrate G, and substrate G maintains the temperature of regulation.
Inside at pedestal basis material 4a is provided with cryogen chamber 10.For example cold-producing medium such as fluorine class I liquid I by heat transfer medium ingress pipe 10a, imports this cryogen chamber 10, and circulates by discharging via heat transfer medium discharge pipe 10b, and this is cold and hot via above-mentioned heat-conducting gas, and G conducts heat to substrate.
Above said base 4, with these pedestal 4 subtends, upper electrode 11 is set.This upper electrode 11 constitutes the pair of parallel plate electrode with pedestal 4.
Upper electrode 11 is supported on the top of chamber 2 by insulating element 12.Upper electrode 11 constitutes to have: with respect to the battery lead plate 13 of pedestal 4 parallel subtend configurations; Central upper at this battery lead plate 13 connects configuration, as the temperature adjusting plate 14 of the adjustment body that is formed with heat transfer medium stream 15 in inside; Be formed with recess, in order to cover temperature adjusting plate 14, only be connected, as the adjustment block 17 of the adjustment body that has heat transfer medium stream 16 in inside with the periphery of battery lead plate 13.The top of battery lead plate 13, and adjustment block 17 between, be formed with gaseous diffusion with space 18.
On battery lead plate 13, be formed with a plurality of gas squit hole 13a, towards and pedestal 4 between plasma form the space ejection and handle gas.
Temperature adjusting plate 14 as thermoregulation mechanism works is connected configuration by the central upper with battery lead plate 13, and battery lead plate 13 between carry out heat exchange, the cold and hot supply battery lead plate 13 of the cold-producing medium that will flow in heat transfer medium stream 15 cools off.Cold-producing medium from heat transfer medium supply source 30, via valve 29 and heat transfer medium ingress pipe 28, imports the heat transfer medium stream 15 in the temperature adjusting plate 14, after the circulation, discharges via heat transfer medium discharge pipe 35 and valve 36 in heat transfer medium stream 15, recycles.This heat transfer medium supply source 30 is divided into a plurality of systems (for example 2 systems) with heat transfer mediums such as cold-producing mediums, can supply with in each system, individually carries out temperature control.
In connecting portion 20, this temperature adjusting plate 14 utilizes for example fixed mechanism such as screw, is connected and fixed with adjustment block 17.In addition, via this connecting portion 20 cold-producing medium is imported the heat transfer medium ingress pipe 28 of adjustment plate body 14 and the heat transfer medium discharge pipe 35 of discharging refrigerant is connected.In addition, temperature adjusting plate 14 utilizes fixed mechanisms such as screw to be fixed on the battery lead plate 13, can be by battery lead plate 13 and adjustment block 17 clampings.
Fig. 2 illustrates the general configuration of this temperature adjusting plate 14.Heat transfer medium stream 15 becomes the mode of crawling and forms with the inside of temperature adjusting plate 14, has crooked flow passage structure.Utilize this flow passage structure, chilling temperature adjustable plate 14 is all expeditiously by cold-producing medium mobile in the heat transfer medium stream.The flow direction of the cold-producing medium that flows in the heat transfer medium stream 15 of temperature adjusting plate 14 is represented with arrow in Fig. 2.In the temperature adjusting plate 14 of present embodiment, cold-producing medium imports the heat transfer medium stream 15 from the introduction part 15a that is connected with heat transfer medium ingress pipe 28.In case near the central authorities of temperature adjusting plate 14, turn back with reeling, near these central authorities, flow, mobile at the periphery of temperature adjusting plate 14 then, discharge to heat transfer medium discharge pipe 35 from discharge portion 15b.Utilize such flow of refrigerant, can the emphasis chilling temperature near the central portion of the battery lead plate 11 of easy rising.But the propagation medium stream 15 in the temperature adjusting plate 14 is not limited only to 1 system, and a plurality of independently heat transfer medium streams can be set.
In addition, as shown in Figure 2, on temperature adjusting plate 14, be formed with a plurality of through hole 14a.These through holes 14a is configured on the position that is communicated with the gas squit hole 13a of battery lead plate 13.Like this, with space 18,, arrive plasma and form the space, become connected state by the through hole 14a of temperature adjusting plate 14 and the gas squit hole 13a of battery lead plate 13 from gaseous diffusion.
This temperature adjusting plate 14 is made by the metal material that for example heat conductivity such as SUS or aluminium is good, have crooked heat transfer medium stream 15 in inside, but the diffusion bond method forms by for example utilizing, can its thickness of attenuate, as its raw material, can be used in combination dissimilar metals in addition.
As the adjustment block 17 that this a kind of thermoregulation mechanism works, same with temperature adjusting plate 14, make by metal materials such as SUS and aluminium, have effect concurrently as the electrode matrix material.Below this adjustment block 17, be formed with recess, utilize this recess to use space 18 around gaseous diffusion.In addition, on the wall 17a of this recess, be provided with heat transfer medium stream 16.Because heat transfer medium stream 16 is connected with heat transfer medium discharge pipe 37 with heat transfer medium ingress pipe 32, cold-producing medium is from the heat transfer medium supply source 30 of Be Controlled temperature, via valve 33 and heat transfer medium ingress pipe 32, import in the heat transfer medium stream 16, in heat transfer medium stream 16, after the circulation, discharge, recycle via heat transfer medium discharge pipe 37 and valve 38.When adjustment block 17 is connected with battery lead plate 13 peripheries, the cold and hot periphery that is delivered to battery lead plate 13 of this cold-producing medium, but the periphery of emphasis ground cooling electrode plate 13.
Be formed with gas and import with opening 39 in the adjustment block 17 of upper electrode 11, this gas imports with opening 39 and is connected with gas lead-in path 40, via valve 41, mass flow controller 42, is connected with processing gas supply source 43.Supply with the processing gas that etching is used from handling gas supply source 43.As handling gas, can use for example SF
6Deng halogen gas, O
2The gas that rare gas such as gas, Ar gas and He gas etc. use in this field usually.
Blast pipe 44 is connected with the bottom of above-mentioned chamber 2 in two places.Exhaust apparatus 45 is connected with this blast pipe 44.Exhaust apparatus 45 has turbomolecular pump equal vacuum pump, can will be evacuated to the decompression atmosphere of regulation in the chamber 2 thus.In addition, on the sidewall of chamber 2, be provided with substrate and move into and take out of mouthfuls 46 and open and close this substrate and move into and take out of mouthfuls 46 gate valve 47, under the state of opening this gate valve 47, can with substrate G and the load locking room (not shown) of adjacency between conveyance.
Each formation portion of plasma-etching apparatus 1 constitutes with the process controller 50 with CPU and is connected control.The user interface 51 that is instructed the display etc. of working condition of the keyboard of input operation etc. or visualization display plasma-etching apparatus 1 to constitute by process management person managing plasma Etaching device 1 is connected with process controller 50.
In addition, be stored under the control of process controller 50, be used to realize the storage part 52 of the scheme of the control program (software) of the various processing undertaken by plasma-etching apparatus 1 or recording processing condition data etc., be connected with process controller 50.
As required,, from storage part 52, access any scheme,, can under the control of process controller 50, in plasma-etching apparatus 1, carry out desirable processing by in process controller 50, carrying out according to the indication of sending etc. from user interface 51.In addition, the scheme of above-mentioned control program or treatment conditions data etc., can utilize the storage medium state in CD-ROM, hard disk, floppy disk, the flash memory etc. for example that is stored in embodied on computer readable, perhaps transmit at any time by for example special circuit, utilize online from other devices.
Secondly, the processing action of the plasma-etching apparatus 1 that constitutes like this is described.
At first, behind open gate valve 47, will be as the substrate G of handled object, never illustrated load locking room is moved into via substrate and to be taken out of mouthfuls 46, sends in the chamber 2, on the electrostatic chuck 5 that mounting forms to the pedestal 4.In this case, the inside of the handing-over of substrate G by inserting pedestal 4, the lifter pin (not shown) that can give prominence to setting from pedestal 4 carry out.Then, closing gate valve 47 utilizes exhaust apparatus 45, will be evacuated to the specified vacuum degree in the chamber 2.
Then, open valve 41, utilize mass flow controller 42 to adjust the processing gas flow of sending from processing gas supply source 43, via handling gas supply pipe 40, gas importing opening 39, the gaseous diffusion that imports upper electrode 11 is used space 18.Handle gas from this gaseous diffusion space 18,,, make the pressure in the chamber 2 maintain setting evenly to substrate G ejection via the through hole 14a of temperature adjusting plate 14 and the gas squit hole 13a of battery lead plate 13.
In this case, with High frequency power from high frequency electric source 25, by adaptation 24, be applied on the upper electrode 11, like this, between as the pedestal 4 of lower electrode and upper electrode 11, produce high-frequency electric field, handle decomposing gas, plasmaization, like this, on substrate G, carry out etch processes.At this moment, by gas supply hole 9b,, carry out the adjustment of substrate G with the rear side of heat-conducting gas supplying substrate G such as He.In addition, open valve 29 and 33, heat transfer medium supply source 30 from the Be Controlled temperature, via heat transfer medium ingress pipe 28 and 32, respectively cold-producing medium is imported heat transfer medium stream 15 in the temperature adjusting plate 14 and the heat transfer medium stream 16 in the adjustment block 17, cool off the battery lead plate 13 of upper electrode 11 like this.In the present embodiment, since corresponding with the central portion of battery lead plate 13, configuration temperature adjusting plate 14, corresponding with the periphery of battery lead plate 13, configuration adjustment block 17 is to surround this temperature adjusting plate 14, battery lead plate 13 that can be cooling large-sized does not equably produce into irregular.
In addition, in temperature adjusting plate 14 and adjustment block 17, owing to set inner refrigerant temperature independently, the corresponding temperature control of the Temperature Distribution in the battery lead plate 13 that produces in the time of can carrying out with plasma etching.Promptly, use can be supplied with the heat transfer medium of a plurality of systems, and use and in each system, to carry out temperature controlled heat transfer medium supply source 30, by the independent refrigerant temperature of supplying with at temperature adjusting plate 14 and adjustment block 17 of setting, can individually adjust the cooling degree of temperature adjusting plate 14 and adjustment block 17.For example, when plasma etching, near the central authorities of battery lead plate 13 than periphery under the easy situation that becomes high temperature, by setting the refrigerant temperature of the heat transfer medium stream 15 in the low temperature adjusting plate 14, cooling that can intensifier electrode plate 13 central portions can make all equalizing temperatures of battery lead plate 13.
In addition, can reach same purpose by changing the refrigerant flow that imports in temperature adjusting plate 14 and the adjustment block 17.In addition, can be according to the Temperature Distribution of the battery lead plate of imagining in advance 13, the flow path length of the heat transfer medium stream 16 in heat transfer medium stream 15 in the design temperature adjustable plate 14 and the adjustment block 17, the sectional area of stream, flow passage structure (crooked degree) etc.
Like this, after carrying out etch processes, stop to apply High frequency power, after stopping gas and importing, the pressure in the chamber 2 are decompressed to authorized pressure from high frequency electric source 25.In addition, open gate valve 47, substrate G moves into by substrate and takes out of mouth 46, from taking out of in the chamber 2 to not shown load locking room, finishes the etch processes of substrate G.Like this, by regulating the temperature of upper electrode 11, and carry out the etch processes of substrate G, can suppress irregular etc., can carry out high-precision plasma etch process by the inhomogeneous etching that causes of the radiant heat of battery lead plate 13.
Fig. 3 is the sectional view of the general configuration of the plasma-etching apparatus 100 of expression second execution mode.In this plasma Etaching device 100, the gaseous diffusion of upper electrode 11 with space part 18 in the diffuser plate 60 used of configuration diffusion gas.Gas diffusion plate 60 disposes with their almost parallels on the top of temperature adjusting plate 14 and battery lead plate 13.On gas diffusion plate 60, be formed with a plurality of gases by hole 60a, and this gas is configured to and the through hole 14a of temperature adjusting plate 14 and the gas squit hole 13a staggered positions of battery lead plate 13 by hole 60a.That is, gas is by hole 60a, and through hole 14a and gas squit hole 13a are not in the vertical direction configuration that is in line.
By such configuration diffuser plate 60, owing to promote gaseous diffusion with the gaseous diffusion in the space part 18 more, gas can be distributed among the gas squit hole 13a of the through hole 14a of temperature adjusting plate 14 and battery lead plate 13 equably, can generate uniform plasma.Other structures of the plasma-etching apparatus 100 of Fig. 3 are identical with the plasma-etching apparatus 1 of Fig. 1, and therefore identical structure is omitted explanation with identical symbolic representation.
Secondly, the result of the test of confirming effect of the present invention is described.
Use and the identical plasma-etching apparatus of plasma-etching apparatus 1 structure shown in Figure 1, carry out plasma etch process under the following conditions, research is as the temperature of the glass substrate G of handled object and the variations in temperature of upper electrode 11.The temperature adjusting plate 14 that uses is of a size of 540mm * 630mm, and battery lead plate 13 is of a size of 1654mm * 2014mm.Cold-producing medium as importing in the temperature adjusting plate 14 uses 50 ℃ Galden (ガ Le デ Application).
In addition,, except not disposing temperature adjusting plate 14 these points, use the identical plasma-etching apparatus of structure and plasma-etching apparatus shown in Figure 11, study variations in temperature equally for relatively.
＜treatment conditions 〉
Top and the bottom interelectrode gap: 90mm
Cavity indoor pressure: 46.7Pa (350mTorr)
High frequency output: 15kW
Handle gas (SF
6/ O
2/ He ratio)=1000/3600/1500mL/min (Sccm)
Temperature (upper electrode/pedestal/chamber wall)=50 ℃/40 ℃/50 ℃
High frequency output time=130 second
＜experimental technique 〉
After gas imports step (30 seconds), under above-mentioned treatment conditions, carry out high frequency output step (130 seconds), set (60 seconds) at interval, be 1 circulation with this, repeat 30 circulations, utilize the variations in temperature during fluorescence temperature sensor is measured this.Measuring point is got 4 points in the central portion of the central portion of glass substrate and bight (from the position of the about 25mm of edge of substrate) and upper electrode and bight (measuring point in above-mentioned glass substrate bight directly over position).
In Fig. 4, Fig. 6 and Fig. 8, the result of the situation (embodiment 1～3) of expression configuration temperature adjusting plate 14, Fig. 5, Fig. 7 and Fig. 9 represent not dispose the result of the situation (comparative example 1～3) of temperature adjusting plate 14.In addition, each embodiment of expression and the glass substrate of comparative example and the initial stage temperature and the maximum temperature of battery lead plate 13 in table 1.
Table 1
| The initial stage temperature (℃) | Maximum temperature (℃) | |||||||
| The glass substrate central portion | The glass substrate bight | The battery lead plate central portion | The battery lead plate bight | The glass substrate central portion | The glass substrate bight | The battery lead plate central portion | The battery lead plate bight | |
| Embodiment 1 (Fig. 4) | 50.2 | 50.3 | 53.1 | 53.7 | 89.5 | 79.0 | 70.2 | 73.7 |
| Comparative example 1 (Fig. 5) | 50.5 | 50.6 | 49.8 | 53.2 | 103.8 | 88.2 | 99.2 | 78.4 |
| Embodiment 2 (Fig. 6) | 47.5 | 46.9 | 52.7 | 53.8 | 83.8 | 81.2 | 68.4 | 71.6 |
| Comparative example 2 (Fig. 7) | 47.1 | 47.4 | 51.7 | 52.7 | 95.2 | 75.7 | 97.3 | 72.7 |
| Embodiment 3 (Fig. 8) | 47.3 | 46.2 | 53.1 | 53.9 | 75.1 | 73.2 | 69.3 | 73.4 |
| Comparative example 3 (Fig. 9) | 47.0 | 46.7 | 51.3 | 54.4 | 79.2 | 74.4 | 96.0 | 76.0 |
In embodiment 1 (Fig. 4) and comparative example 1 (Fig. 5), the voltage that is applied on the electrostatic chuck is 3kV, does not carry out the cooling that heat-conducting gas is supplied with.
In embodiment 2 (Fig. 6) and comparative example 2 (Fig. 7), the voltage that is applied on the electrostatic chuck is 3kV, and the back pressure of heat-conducting gas is 160Pa (1.2Torr).
In embodiment 3 (Fig. 8) and comparative example 3 (Fig. 9), the voltage that is applied on the electrostatic chuck is 3.5kV, and the back pressure of heat-conducting gas (He gas) is 333.3Pa (2.5Torr).
In the comparison of comparative example 1 (Fig. 5) and embodiment 1 (Fig. 4), temperature difference is 15.6 ℃ in the real estate of comparative example 1, be 10.5 ℃ in embodiment 1, the electrostatic chuck side draught is attached only utilizing, do not carry out under the situation of cooling of heat-conducting gas, by utilizing temperature adjusting plate 14 to carry out the cooling of upper electrode 11, the maximum temperature of substrate center portion can be suppressed lower, and can suppress the temperature difference in the real estate really.
In the comparison of comparative example 2 (Fig. 7) and embodiment 2 (Fig. 6), temperature difference in the real estate in the comparative example 2 is about 19.5 ℃, be 2.6 ℃ in embodiment 2, by configuration temperature adjusting plate 14 on upper electrode 11, cool off, and merge the heat-conducting gas cooling of using the electrostatic chuck side, the maximum temperature of substrate center portion can be suppressed lower, and can suppress the temperature difference in the glass basal plane really.
In addition, in the comparison of comparative example 3 (Fig. 9) and embodiment 3 (Fig. 8), temperature difference in the real estate in the comparative example 3 is 4.8 ℃, be 1.9 ℃ in embodiment 3, at the voltage that applies on the electrostatic chuck is 3.5kV, the back pressure of heat-conducting gas (He gas) is 333.3Pa (2.5Torr), under the situation of the cooling of the heat-conducting gas of enhancing electrostatic chuck side, utilize temperature adjusting plate 14 to carry out the cooling of upper electrode 11, the maximum temperature of substrate center portion can be suppressed lower, more can make the equalizing temperature in the real estate.
Again from the comparison of embodiment 1～3 (Fig. 4, Fig. 6 and Fig. 8), by merge using upper electrode 11 coolings undertaken by temperature adjusting plate 14 and the heat-conducting gas of electrostatic chuck side to cool off, can eliminate not producing problem levels such as etching is irregular to the practicality, obtain the temperature in the real estate.
In upper electrode 11, temperature adjusting plate is not limited to form illustrated in figures 1 and 2, can have various distortion, can be configured on the battery lead plate 13.Referring now to Figure 10～Figure 12 temperature adjusting plate configuration layout is described.In addition, Figure 10～Figure 12 is the plane graph of the battery lead plate that disposes temperature adjusting plate 13 seen from above, omits gas squit hole 13a among the figure.In addition, because Figure 10～the described temperature adjusting plate of the 26S Proteasome Structure and Function of temperature adjusting plate shown in Figure 12 and Fig. 2 14 is identical, omits its detailed description.
For example, as shown in figure 10, can only on the zone corresponding, dispose temperature adjusting plate 70 with the central portion of battery lead plate 13.In addition, as shown in figure 11, also can dispose two deblocking temperature adjustable plate 71a, 71b side by side.In this case, different flow, different temperatures or different types of cold-producing medium are circulated independently among heat transfer medium stream 72a, the 72b in temperature adjusting plate 71a, 71b, also can under identical flow, make identical cold-producing medium circulation.In addition, be not limited to two, the temperature adjusting plate of configuration more than three also can.
In addition, as shown in figure 12, temperature adjusting plate 73 is biased on the part of battery lead plate 13 also passable.Present embodiment is according to some reason, under the situation that becomes localized hyperthermia on the part of battery lead plate 13 and to carry out under the temperature controlled situation etc. of upper electrode 11 at the temperature deviation (Temperature Distribution in the face of substrate G) of corresponding pedestal 4 sides be effective.
The invention is not restricted to above-mentioned execution mode.For example, in processing unit of the present invention, with the capacitive coupling type parallel flat plasma-etching apparatus that High frequency power is applied to PE (plasma etching) type on the upper electrode is that example describes, but be not limited to Etaching device, in other plasma processing apparatus such as ashing, also be suitable for, also passable in the form of High frequency power being supplied with lower electrode, also be not limited to the capacitive coupling type, induction coupled mode device also can.
In addition, in the above-described embodiment, serviceability temperature adjustable plate 14 and adjustment block 17 have been described, the mode of the battery lead plate 13 of the upper electrode 11 of cooling plasma-etching apparatus 1, but using heat transfer medium, under the situation of heating electrode plates 13, also can serviceability temperature adjustable plate 14 and adjustment block 17.Under the situation of heating electrode plates 13, also same with the situation of cooling, can carry out high-precision temperature control.
Claims (23)
1. upper electrode, its in the process chamber of plasma processing apparatus, with the mounting table subtend configuration of the processed substrate of mounting, be used for and described mounting table between produce the plasma of handling gas, it is characterized in that having:
Be formed with the battery lead plate that the processed substrate that is used on described mounting table sprays a plurality of ejiction openings of described processing gas; With
Have the heat transfer medium stream that makes heat transfer medium circulation usefulness in inside, be configured in the top of described battery lead plate, regulate a plurality of adjustment bodies of the temperature of described battery lead plate.
2. upper electrode as claimed in claim 1 is characterized in that having:
Be used to regulate part or all the first adjustment body of temperature in zone beyond the described battery lead plate periphery; With
Be used to regulate the second adjustment body of temperature in the periphery zone of described battery lead plate.
3. upper electrode as claimed in claim 2 is characterized in that:
To carrying out independent control in the temperature of the heat transfer medium of the described first adjustment body internal circulation with in the temperature of the heat transfer medium of the described second adjustment body internal circulation.
4. upper electrode, its in the process chamber of plasma processing apparatus, with the mounting table subtend configuration of the processed substrate of mounting, be used for and described mounting table between produce the plasma of handling gas, it is characterized in that having:
Be formed with the battery lead plate that the processed substrate that is used on described mounting table sprays a plurality of ejiction openings of described processing gas; With
Have the heat transfer medium stream that makes heat transfer medium circulation usefulness in inside, be configured in the top of described battery lead plate, regulate the temperature adjusting plate of the temperature of described battery lead plate.
5. upper electrode as claimed in claim 4 is characterized in that:
On described temperature adjusting plate, be formed with and make a plurality of openings of described processing gas by usefulness.
6. upper electrode as claimed in claim 5 is characterized in that:
On the top of described temperature adjusting plate, be formed with the processing gaseous diffusion that described processing gaseous diffusion is used and use the space.
7. upper electrode as claimed in claim 6 is characterized in that:
With in the space, a plurality of gas through flow holes that have with the opening staggered positions configuration of described temperature adjusting plate are set in described processing gaseous diffusion, promote the gas diffusion plate of the diffusion of described processing gas.
8. as each described upper electrode in the claim 4～7, it is characterized in that:
Have a plurality of described temperature adjusting plates, the temperature at the heat transfer medium of each temperature adjusting plate internal circulation is carried out independent control.
9. upper electrode, its in the process chamber of plasma processing apparatus, with the mounting table subtend configuration of the processed substrate of mounting, be used for and described mounting table between produce the plasma of handling gas, it is characterized in that having:
Be formed with the battery lead plate that the processed substrate that is used on described mounting table sprays a plurality of ejiction openings of described processing gas;
Have the heat transfer medium stream that makes heat transfer medium circulation usefulness in inside, regulate the temperature adjusting plate of the temperature of described battery lead plate central portion; With
Have the heat transfer medium stream that makes heat transfer medium circulation usefulness in inside, regulate the adjustment block of the temperature of described battery lead plate periphery.
10. upper electrode as claimed in claim 9 is characterized in that:
On described temperature adjusting plate, be formed with and make a plurality of openings of described processing gas by usefulness.
11., it is characterized in that as claim 9 or 10 described upper electrodes:
Described adjustment block forms in the mode that covers described temperature adjusting plate, have and described temperature adjusting plate between be formed with and make processing gaseous diffusion that described processing gaseous diffusion uses recess with the space.
12. upper electrode as claimed in claim 11 is characterized in that:
Be provided with in described processing gaseous diffusion and have a plurality of gas through flow holes, promote the diffuser plate of described processing gaseous diffusion with the space.
13. upper electrode as claimed in claim 12 is characterized in that:
The gas through flow hole of described gas diffusion plate and the opening staggered positions of described temperature adjusting plate are configured.
14., it is characterized in that as each described upper electrode in the claim 9～13:
To carrying out independent control in the temperature of the heat transfer medium of described temperature adjusting plate internal circulation with in the temperature of the heat transfer medium of described adjustment block internal circulation.
15., it is characterized in that as each described upper electrode in the claim 9～13:
Has the described temperature adjusting plate of polylith.
16. upper electrode as claimed in claim 15 is characterized in that:
Constitute the temperature at the heat transfer medium of a plurality of described temperature adjusting plate internal circulations is carried out independent control.
17. a plasma processing apparatus is characterized in that:
Have as each described upper electrode in the claim 1～16.
18. a method of plasma processing is characterized in that:
Use has the plasma processing apparatus of upper electrode as claimed in claim 3, on one side to carrying out independent control in the temperature of the heat transfer medium of the described first adjustment body internal circulation with in the temperature of the heat transfer medium of the described second adjustment body internal circulation, on processed substrate carry out plasma treatment on one side.
19. a method of plasma processing is characterized in that:
Use has the plasma processing apparatus of upper electrode as claimed in claim 8, on one side the temperature at the heat transfer medium of a plurality of described temperature adjusting plate internal circulations is carried out independent control, on processed substrate, carry out plasma treatment on one side.
20. a method of plasma processing is characterized in that:
Use has the plasma processing apparatus of upper electrode as claimed in claim 14, on one side to carrying out independent control in the temperature of the heat transfer medium of described temperature adjusting plate internal circulation with in the temperature of the heat transfer medium of described adjustment block internal circulation, on processed substrate carry out plasma treatment on one side.
21., it is characterized in that: handled object is carried out etch processes as each described method of plasma processing in the claim 18～20.
22. a control program is characterized in that:
Move on computers, when carrying out, control described plasma processing apparatus, carry out as each described method of plasma processing in the claim 18～21.
23. a computer-readable storage medium stores the control program of operation on computers, it is characterized in that:
Described control program is controlled described plasma processing apparatus when carrying out, carry out as each described method of plasma processing in the claim 18～21.
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| Application Number | Priority Date | Filing Date | Title |
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| JP2005179699 | 2005-06-20 | ||
| JP2005-179699 | 2005-06-20 | ||
| JP2005179699A JP4593381B2 (en) | 2005-06-20 | 2005-06-20 | Upper electrode, plasma processing apparatus, and plasma processing method |
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| CN1885488A true CN1885488A (en) | 2006-12-27 |
| CN100431097C CN100431097C (en) | 2008-11-05 |
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| CNB2006100930881A Active CN100431097C (en) | 2005-06-20 | 2006-06-20 | Top electrode, plasma processing device and method |
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| JP (1) | JP4593381B2 (en) |
| KR (1) | KR100802667B1 (en) |
| CN (1) | CN100431097C (en) |
| TW (1) | TWI433232B (en) |
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- 2005-06-20 JP JP2005179699A patent/JP4593381B2/en not_active Expired - Fee Related
-
2006
- 2006-06-19 KR KR1020060055096A patent/KR100802667B1/en active IP Right Grant
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI433232B (en) | 2014-04-01 |
| KR20060133485A (en) | 2006-12-26 |
| CN100431097C (en) | 2008-11-05 |
| JP4593381B2 (en) | 2010-12-08 |
| KR100802667B1 (en) | 2008-02-12 |
| JP2006352040A (en) | 2006-12-28 |
| TW200741854A (en) | 2007-11-01 |
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