CN1783431A - Plasma processing apparatus - Google Patents
Plasma processing apparatus Download PDFInfo
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- CN1783431A CN1783431A CN 200510127676 CN200510127676A CN1783431A CN 1783431 A CN1783431 A CN 1783431A CN 200510127676 CN200510127676 CN 200510127676 CN 200510127676 A CN200510127676 A CN 200510127676A CN 1783431 A CN1783431 A CN 1783431A
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Abstract
To provide a capacity-coupled plasma processing device that performs plasma processing with high in-plane uniformity and hardly causes the charge-up damage. The capacity-coupled plasma processing device 100 has a chamber 1 held in a vacuum atmosphere, first and second electrodes 2 and 18 arranged in parallel with each other in the chamber 1, and a plasma generating mechanism 10 which generates the plasma of a processing gas by forming a high-frequency electric field between the electrodes 2 and 18. In the device 100, the first electrode 2 supports a wafer W and, at the same time, functions as a cathode electrode to which high-frequency electric power is applied, the second electrode 18 functions as a grounded anode electrode, and the surface of the electrode 18 facing the first electrode 2 is composed of a conductive material 18c.
Description
Technical field
The present invention relates in manufacturing process of semiconductor device etc., processed substrate be carried out the plasma processing apparatus of the capacitive coupling type of plasma treatment.
Background technology
For example, in the manufacture process of semiconductor device, the plasma treatment of the semiconductor wafer as processed substrate being carried out etching, sputter, CVD (chemical vapor deposition) etc. that adopt more.
As the plasma processing apparatus that carries out this plasma treatment, use various devices, but wherein, main flow is a capacitive coupling type parallel flat plasma processing apparatus.
Capacitive coupling type parallel flat plasma processing apparatus, configuration pair of parallel plate electrode (upper and lower electrode) in chamber, it is indoor to handle the gas introduction chamber, simultaneously, High frequency power is supplied with an electrode, between electrode, form high-frequency electric field, produce high-frequency discharge.By this high-frequency discharge, form the plasma of handling gas, the specified layer of semiconductor wafer is carried out plasma etching.For example, the known device of High frequency power being supplied with the lower electrode of placing semiconductor wafer.In this case, lower electrode works as negative electrode, and upper electrode works as anode.In addition, the High frequency power that is applied on the lower electrode has the function that generates plasma and handled object is applied high frequency bias concurrently.
In this capacitive coupling type parallel flat plasma processing apparatus, the upper electrode as anode works in order to prevent metallic pollution and consumption, forms oxide-film or Y on the surface of metal matrix
2O
3Deng the coating etc. of high-insulativity pottery of plasma-resistance.
For electronics and ionic current are acted in the mode of earthing potential neutralization,, on the dielectric film on the surface that is formed on upper electrode, produce the current potential of earthing potential by the plasma that the high-frequency discharge that produces between electrode generates.With this current potential is benchmark, the current potential of decision plasma.
Yet in recent years, miniaturization day by day such as the design rule of the manufacture process of semiconductor etc. in plasma etching, requires higher dimensional accuracy especially, more in the requirement raising etching selection of mask and substrate is compared and inner evenness.Because like this, require the low-pressureization of the processing region in the chamber, low ion energyization,, adopt more than the 40MHz, for this reason than the high frequency waves that have much higher frequency now.
Yet, because the progress of such low-pressureization and low ion energyization can not be ignored inhomogeneities in the face that has unchallenged plasma potential now.That is, in the high existing apparatus of ion energy, even in the plasma electrically plane deviation is arranged, can not produce big problem yet, and, during the ion energy step-down, inhomogeneously in the face of plasma potential cause that easily the inhomogeneous of processing or charging damage (charge up damage) when under low pressure more.
Relative therewith, in patent documentation 1, illustrated in the high-frequency current path that on wafer, applies the high frequency bias generation, be provided with so that the current path apparatus for correcting that near the current segment the wafer periphery is corrected towards the mode of the wafer opposed faces of opposite electrode perhaps is provided with the impedance roughly uniform impedance adjusting device in wafer face that makes from high frequency bias to ground connection.Like this, can improve the uniformity in the wafer face that when applying high frequency bias, produces automatic bias, can suppress charging and damage miniature damages such as (charge up damage).
Yet, in the technology of patent documentation 1, current path apparatus for correcting and impedance adjusting device etc. must be set, make the apparatus structure complexity, also may not finely wait these problems to produce for the inner evenness of plasma treatment.
[patent documentation 1]: the spy opens the 2001-185542 communique.
Summary of the invention
The present invention proposes in view of the above problems, and its objective is to provide a kind of inner evenness of plasma treatment height, and is difficult to produce the capacitive coupling plasma processing apparatus that charging damages (charge up damage).
In order to address the above problem, first viewpoint according to the present invention provides a kind of capacitive coupling plasma processing apparatus, has: remain on the chamber in the vacuum atmosphere; First and second electrodes that in above-mentioned chamber, dispose parallel to each other; And between above-mentioned first and second electrodes, form high-frequency electric field, the plasma that generates the plasma of handling gas generates mechanism, it is characterized by, the processed substrate of above-mentioned first electrode supporting, work as the negative electrode that applies High frequency power simultaneously, above-mentioned second electrode works as the anode of ground connection, and the surface of above-mentioned second electrode and above-mentioned first electrode contraposition is made of electric conductor.
In addition, second viewpoint according to the present invention provides a kind of capacitive coupling plasma processing apparatus, has: remain on the chamber in the vacuum atmosphere; First and second electrodes that in above-mentioned chamber, dispose parallel to each other; And between above-mentioned first and second electrodes, form high-frequency electric field, the plasma that generates the plasma of handling gas generates mechanism, it is characterized by, the processed substrate of above-mentioned first electrode supporting, work as the negative electrode that applies High frequency power simultaneously, above-mentioned second electrode works as the anode of ground connection, and above-mentioned second electrode has main body and is located at aforementioned body and lip-deep conductive layer above-mentioned first electrode contraposition.
The 3rd viewpoint according to the present invention provides a kind of capacitive coupling plasma processing apparatus, has: remain on the chamber in the vacuum atmosphere; First and second electrodes that in above-mentioned chamber, dispose parallel to each other; And between above-mentioned first and second electrodes, form high-frequency electric field, the plasma that generates the plasma of handling gas generates mechanism, it is characterized by, the processed substrate of above-mentioned first electrode supporting, work as the negative electrode that applies High frequency power simultaneously, above-mentioned second electrode works as the anode of ground connection, above-mentioned second electrode have with the surface of above-mentioned first electrode contraposition on be provided with the main body of dielectric film and be located at aforementioned body and lip-deep conductive layer above-mentioned first electrode contraposition.
Adopt the present invention, owing to be not as existing, second electrode and the surface first electrode contraposition (counter surface) of working as the anode of ground connection is insulated film and covers, but constitute by electric conductor, on the counter surface of second electrode, electric current flows in radial direction (direction in the face) easily, therefore, the current potential of the radial direction of the counter surface of second electrode is even, can greatly reduce the electric potential gradient of radial direction.Utilize this effect, because near second electrode that works as anode, the suspension joint current potential in the plasma does not have gradient, can make the ion energy distribution that is incident on first electrode that works as negative electrode even.In addition, by the ion energy homogenizing, plasma generates also homogenizing of electron energy, so electron density distribution is also even.Like this, plasma processing uniformity improves, and simultaneously, can reduce charging and damage (charge up damage).Because the suspension joint current potential in the plasma is identical with the situation that plasma potential changes, below, illustrate that the suspension joint current potential in the plasma can be replaced with plasma potential.
In addition, as second viewpoint, by making second electrode for having main body and being located at structure main body and lip-deep conductive layer first electrode contraposition, no matter the material of main body how, can make the counter surface of second electrode have desirable conductivity.
The 3rd viewpoint is such for another example; by make second electrode be have with the surface of first electrode contraposition on be provided with the main body of dielectric film; with be located at structure main body and lip-deep conductive layer first electrode contraposition; can guarantee the protection effect of the existing dielectric film that uses; and utilize the conductive layer on it, can bring into play above-mentioned effect.Can also on conventional device, form conductive layer, very easy.
In above-mentioned the 3rd viewpoint, above-mentioned conductive layer is the floating of direct current, also has the variable DC power supply that is connected with above-mentioned conductive layer, and above-mentioned conductive layer also can pass through above-mentioned direct-current power supply earthing.
In the above-mentioned second and the 3rd viewpoint, the thickness of above-mentioned conductive layer is preferably more than the skin depth δ that represents with following formula.
δ=(2/ ω o μ)
1/2(o in the formula: conductance, μ: magnetic susceptibility, ω: angular frequency)
In addition, the area with above-mentioned first electrode contraposition, one side of above-mentioned conductive layer is preferably more than the area of processed substrate of above-mentioned first electrode supporting.In addition, the resistivity at the material of above-mentioned conductive layer is ρ (Ω m
2/ m), thickness is under the situation of t (m), and resistance ρ/t radially preferably satisfies ρ/t≤1000, and the resistance ρ * t of thickness direction preferably satisfies ρ * t≤1.In addition, above-mentioned conductive layer is by Cu, Si, and SiC, W, any material is made among the C.On the inner wall surface of above-mentioned chamber, has conductive surface's layer.
In above-mentioned first viewpoint, above-mentioned second electrode is made of single electric conductor.In this case, as the material of second electrode, can enumerate the metal-ceramic complex.In addition, the area with above-mentioned first electrode contraposition, one side of above-mentioned second electrode is preferably more than the area of the processed substrate that above-mentioned first electrode supported.In addition, preferably on the inner wall surface of above-mentioned chamber, has conductive surface's layer.
Above-mentioned anyways in, the frequency that is applied to the High frequency power on above-mentioned first electrode is more than the 40MHz.Like this, by using the High frequency power of high frequency, can bring into play above-mentioned effect effectively.
Adopt the present invention, second electrode that works by the anode that constitutes with electric conductor as ground connection, with the surface of first electrode contraposition that works as negative electrode, can obtain the inner evenness height of plasma treatment, and be difficult to produce the capacitive coupling plasma processing apparatus that charging damages (charge up damage).
Description of drawings
Fig. 1 is the sectional view of the plasma-etching apparatus of an execution mode of expression plasma processing apparatus of the present invention.
Fig. 2 generates plasma for expression the summary sectional view of the state that the high frequency electric source of usefulness and the high frequency electric source used of importing ion be connected with brace table as lower electrode.
Fig. 3 is the schematic diagram as the structure of the battery lead plate of upper electrode of the previous plasma-etching apparatus of expression.
The figure that electron density distribution in plasma when Fig. 4 uses previous plasma-etching apparatus for expression and plasma potential distribute.
Fig. 5 is the schematic diagram as an example of the structure of the battery lead plate of upper electrode of expression as the plasma-etching apparatus of an execution mode of plasma processing apparatus of the present invention.
The figure that electron density in plasma when Fig. 6 uses plasma-etching apparatus as an execution mode of plasma processing apparatus of the present invention for expression and plasma potential distribute.
Fig. 7 schematically shows with the conductive layer of battery lead plate to be connected, and forms the sectional view of the apparatus structure of conductive surface's layer on the inner wall surface of chamber.
Fig. 8 schematically shows variable DC power supply is connected with the conductive layer of battery lead plate, the sectional view of the apparatus structure by variable direct-current power supply earthing.
Fig. 9 is expression another routine schematic diagram as the structure of the battery lead plate of upper electrode as the plasma-etching apparatus of an embodiment of plasma processing apparatus of the present invention.
Figure 10 use to paste the Cu band as the battery lead plate of conductive layer and previous battery lead plate for expression, and making High frequency power is 500W, the figure that distributes in the face of the plasma potential when carrying out the plasma treatment of wafer.
Figure 11 uses for expression and pastes the Si band as the battery lead plate of conductive layer and previous battery lead plate, makes High frequency power (a) be 2400W, the figure that distributes in the face of the plasma potential when carrying out plasma treatment for 500W, (b).
Figure 12 is for representing the schematic diagram of the component structure that test charge damage patience is used.
Figure 13 is for being illustrated among previous and the present invention the figure of the generation frequency of the damage of relatively charging.Symbol description
1: chamber
1b: conductive surface's layer
2: brace table (first electrode)
5: focusing ring
10,26: high frequency electric source
15: processed air supply apparatus
18: upper electrode, shower nozzle (second electrode)
18a: main body
18b: dielectric film
18c: conductive layer
20: exhaust apparatus
21a, 21b: annulus magnet,
100: plasma-etching apparatus,
W: semiconductor wafer (processed substrate).
Embodiment
Below, with reference to accompanying drawing, embodiments of the present invention are described.
Fig. 1 is the sectional view of expression as the plasma-etching apparatus of an execution mode of plasma processing apparatus of the present invention.
This plasma Etaching device 100 has the chamber 1 that constitutes general cylindrical shape airtightly.The main body of this chamber 1 is made of metals such as for example aluminium, forms the oxidation processes film within it on the wall surface or by Y
2O
3The such dielectric film of film (for example sputtered films of bismuth) Deng the insulating ceramics formation.Chamber 1 ground connection.
In this chamber 1, flatly support wafer W as processed substrate, simultaneously, be provided as the brace table 2 that lower electrode works.Brace table 2 for example is made of the aluminium that oxidation processes is carried out on the surface.Give prominence to the circular support portion 3 of formation from the diapire of chamber 1 in the mode corresponding, on this support portion 3, circular insulating element 4 is set, by this insulating element 4, the outer edge of supported platform 2 with the periphery of brace table 2.In addition, the focusing ring 5 that is formed by conductive material or insulating properties material is set on the periphery above the brace table 2.Between insulating element 4 and chamber 1 perisporium, baffle plate 14 is set.In addition, between brace table 2 and chamber 1 diapire, form blank part 7.
On the surface portion of brace table 2, be provided for the electrostatic chuck 6 of Electrostatic Absorption wafer W.This electrostatic chuck 6 is got involved electrode 6a and is constituted between insulator 6b, be connected electrode 6a by switch 13a DC power supply 13.By voltage is applied on the electrode 6a from DC power supply 13, utilize electrostatic force, for example Coulomb force absorption semiconductor wafer W.
Cold medium stream 8a is set in brace table 2, and cold medium pipe arrangement 8b is connected with this cold medium stream 8a, utilizes cold medium control device 8, by this cold medium pipe arrangement 8b, suitable cold medium is supplied with cold medium stream 8a, circulates.Like this, brace table 2 can be controlled to proper temperature.In addition, the heat-conducting gas that is provided for supplying with heat transfer usefulness between the back side of the surface of electrostatic chuck 6 and wafer W is the heat-conducting gas pipe arrangement 9a of He gas for example, and heat-conducting gas by this heat-conducting gas pipe arrangement 9a, is supplied with the wafer W back side from heat-conducting gas feedway 9.Like this, even exhaust in the chamber 1 keeps vacuum, also can be expeditiously with the cold and hot wafer W that passes to of the cold medium that in cold medium stream 8a, circulates, the temperature that can improve wafer W is controlled.
The electric wire 12 of giving that supply high frequency electric power is used is connected with the approximate centre of brace table 2, and adaptation 11 be connected to electric wire 12 with this with high frequency electric source 10.From high frequency electric source 10, the High frequency power of assigned frequency is supplied with brace table 2.
On the other hand, opposed with brace table 2, be provided with shower nozzle 18 (hereinafter referred to as upper electrode 18) above it as upper electrode.Shower nozzle 18 embeds in the top wall portion of chamber 1.This shower nozzle 18 has by metal or the semiconductor main body 18a that constitutes such as carbon or Si for example; With in order to prevent consumption such as metallic pollution and plasma, and prevent injury, be located at main body 18a and dielectric film 18b brace table 2 opposed surfaces; And the conductive layer 18c that is located at its outside.Dielectric film 18b is by the oxidation processes film or by Y
2O
3Film formation such as (for example sputtered films of bismuth) Deng the insulating ceramics formation.A plurality of gases hole 17 that spues is set, so that connect bottom, dielectric film 18b and the conductive layer 18c of main body 18a.Have gas introduction part 18d on the top of main body 18a, form space 18e in inside.Gas supplying tubing 15a is connected with gas introduction part 18d, and the processed air supply apparatus 15 of the processing gas that the supply etching is used is connected with the other end of this gas supplying tubing 15a.
As mentioned above, existence by conductive layer 18c, owing to make by electric conductor with the brace table 2 opposed surfaces of upper electrode 18, describe in detail like that as the back, make electric current with the brace table 2 opposed surfaces of upper electrode 18 on, direction is mobile in the face, can reduce face internal electric field distribution (electric potential gradient of earthing potential), like this, can make the plasma potential of inter-electrode space even, can improve inner evenness the plasma treatment of wafer W.Conductive layer 18c preferably covers all surfaces of upper electrode 18, the area of conductive layer 18c for be positioned in negative electrode (lower electrode) on the area of the wafer W area more than equating.The formation method of conductive layer 18c has no particular limits, can be with fitting, and film formation technology such as spraying plating or CVD form.
As the processing gas that etching is used, can adopt the existing various processing gases that use, for example, can suitably use and contain carbon fluoride gas (C
xF
y) or hydrofluorocarbon gas (C
pH
qF
r) the gas of halogens.In addition, can also add rare gas or N such as Ar, He
2Gas, O
2Gas etc.Can use for example O under the situation of ashing being applicable to
2Gas etc. are as handling gas.
This processing gas, by gas supplying tubing 15a, gas introduction part 18d, from processed air supply apparatus 15, the space 18e to the main body 18a spues from the gas hole 17 that spues, and supplies with the etching of the film that forms and use on wafer W.
Blast pipe 19 is connected with the diapire of chamber 1, and the exhaust apparatus 20 that comprises vacuum pump etc. is connected with this blast pipe 19.By making the vacuum pump work of exhaust apparatus 20, can the specified vacuum degree will be decompressed in the chamber 1.On the other hand, at the sidewall upside of chamber 1, be provided with the gate valve 24 of the input/output port 23 that opens and closes wafer W.
On the other hand, about the input/output port 23 of chamber 1, dispose two concentric annulus magnet 21a, 21b is round chamber 1.Form magnetic field around the processing space between brace table 2 and upper electrode 18.This annulus magnet 21a, 21b can be rotated by the rotating mechanism that does not illustrate among the figure.
Annulus magnet 21a, a plurality of fan-shaped magnets that 21b is made of permanent magnet are the circular multipole state that is configured to.Promptly, in annulus magnet 21, adjacent a plurality of sector magnets pole orientation each other is configured to opposite direction mutually, like this, between adjacent sector magnet, form the magnetic line of force, only on the periphery of processing space, form for example 0.02～0.2T (200～2000 Gauss), the magnetic field of preferred 0.03～0.045T (300～450 Gauss), the wafer configuration part becomes no magnetic field state in fact.Like this, can obtain suitable plasma and enclose effect.
So-called wafer configuration part does not have magnetic field state in fact and is not only the situation that does not have magnetic field fully, also is included in not form the influential magnetic field of etch processes on the wafer configuration part and have in fact the situation that processing of wafers not have the magnetic field that influences.
In order to adjust plasma density and iontophoresis effect, make plasma generate the High frequency power of usefulness and to import the High frequency power that the ion in the plasma uses overlapping also passable.Particularly as shown in Figure 2, except the plasma that is connected with adaptation 11 generated the high frequency electric source 10 of usefulness, the high frequency electric source 26 that iontophoresis is used was connected with adaptation 11b, and they are overlapping.In this case, as the high frequency electric source 26 that iontophoresis is used, optimized frequency is 500KHz～27MHz.Like this, the control ion energy can more improve the speed of the plasma treatment of etching speed etc.
Each component part of plasma-etching apparatus 100 is connected with control part (process controller) 50, controls.Particularly, controlled refrigerant control device 8, heat-conducting gas feedway 9, exhaust apparatus 20, the switch 13a that is used for the DC power supply 13 of electrostatic chuck 6, high frequency electric source 10, adaptation 11 etc.
In addition, the process management person is for managing plasma Etaching device 100, and the user interface 51 that is made of display that instructs keyboard and the working condition that makes plasma processing apparatus 100 of input operation etc. visually to show etc. is connected with control part 50.
In addition, be used for realizing the control program of the various processing that plasma-etching apparatus 100 is carried out by the control of control part 50, with holding the program of handling according to each component part of treatment conditions article on plasma body Etaching device is the storage part 52 of method for making (recipe), is connected with control part 50.Method for making is stored in hard disk or the semiconductor memory also passable, under the state in the recording medium that is contained in the property failed such as CDROM, DVD, is installed in the assigned position of storage part 52 also passable.
In addition, as required, can be according to the indication of sending etc. from user interface 51, from storage part 52, access any method for making, carry out by control part 50.Under the control of control part 50, carry out desirable processing by plasma-etching apparatus 100.
Secondly, the processing action of the plasma-etching apparatus that constitutes like this is described.
At first, open the gate valve 24 of the plasma-etching apparatus 100 of Fig. 1, the wafer W of utilizing conveying arm will have etching object layer is input in the chamber 1, mounting to the brace table 2 after, carrying arm is kept out of the way, and closing gate valve 24 utilizes the vacuum pump of exhaust apparatus 20, by blast pipe 19, the specified vacuum degree will be pumped in the chamber 1.
Then, with the flow of regulation, the processing gas that etching is used imports in the chambers 1 from processed air supply apparatus 15, with the pressure of keeping regulation in the chamber 1 0.13～133.3Pa (1～1000mTorr) for example.Like this, keeping under the state of authorized pressure, from high frequency electric source 10 with frequency be more than the 40MHz, the High frequency power of for example 100MHz supplies with brace table 2.At this moment,, be applied to from DC power supply 13 on the electrode 6a of electrostatic chuck 6, utilize for example Coulomb force absorption wafer W assigned voltage.
Like this, by High frequency power being applied on the brace table 2 as lower electrode, forming high-frequency electric field as the shower nozzle 18 of upper electrode and in as the processing space between the brace table 2 of lower electrode, like this, can make and supply with the processing gas plasmaization of handling the space, utilize this plasma to be etched in the etching object layer that forms on the wafer W.
When etching, by the annulus magnet 21a by multipole state, 21b forms magnetic field around the processing space, and the performance plasma is enclosed effect, even, also can more be formed uniformly plasma as present embodiment, being easy to generate under the uneven high frequency situations of plasma.In addition, also have film that this magnetic field is not had the situation of effect, in this case, segment magnet is rotated, with handle the space around do not form the mode in magnetic field in fact, handle also passable.
Under the situation that forms above-mentioned magnetic field, utilize the conductivity on every side of the wafer W that is located on the brace table 2 or the focusing ring 5 of insulating properties, can improve the uniformization effect of plasma treatment more.Promptly, under focusing ring 5 and situation about being made by the conductive material of silicon and SiC etc., owing to all work as lower electrode until the focusing ring zone, so plasma forms the zone and is extended on the focusing ring 5, can promote the plasma treatment of wafer W periphery, improve the uniformity of etching speed.In addition, under the situation that focusing ring 5 is made for insulating properties materials such as quartz because do not carry out the reception of electric charge between electronics in focusing ring 5 and plasma or the ion and give with, can increase the effect of enclosing plasma, the uniformity of raising etching speed.
In addition and since upper electrode 18 with its brace table 2 opposed surfaces be conductive layer 18c, can improve the inner evenness of electric field on the surface of upper electrode 18, can make the plasma treatment homogenizing of wafer W.This point is in following detailed description.
As shown in Figure 3, under the situation of plasma-etching apparatus formerly, in order to prevent the loss of metallic pollution and plasma, on the surface of the main body 18a of upper electrode 18, form the oxidation processes film or by Y
2O
3The such dielectric film 18b of film (for example sputtered films of bismuth) Deng the insulating ceramics formation.Because this film is an outermost layer, therefore, the surface of upper electrode 18 is an insulator.In addition, on the inner wall surface of chamber 1, also form same dielectric film.As shown in Figure 4, in this state, when generating high-frequency plasma, high-frequency current flows to main body 18a side by the dielectric film 18b on the surface of upper electrode 18, flows to the radial direction (direction in the face) of the dielectric film 18b on surface hardly.Because like this, in high-frequency plasma, because reason such as electron density distribution is inhomogeneous, when the dielectric film 18b on upper electrode 18 surfaces when radial direction has Potential distribution, Potential distribution is inhomogeneous, has its Potential distribution remaining, therefore, the inner evenness of plasma potential is poor.As a result, generation is injected in the face of formation as the energy of the ion on the brace table 2 of the lower electrode of negative electrode and is distributed, and the inner evenness of chip etching is poor.In addition, form frequency with high frequency electric source below 27MHz at plasma, pressure process height (about 2～10Pa), under the situation of the plasma that ion energy is high, the Potential distribution of the radial direction on kind electrode surface does not become problem.But recently, the frequency of high frequency electric source surpasses 40MHz, and low-pressure (1.3Pa is following) becomes low electron density (1 * 10
10Below) plasma, when using negativity gas when handling gas because the resistivity height of plasma, encourage this inhomogeneous, and, from the requirement of process performance, the low ion energy of essential control (100eV is following).Like this, it is inhomogeneous to ignore in the face by plasma potential the inhomogeneous energy that causes.Like this, produce in the face of plasma etch process inhomogeneous, or by the insulation breakdown (charging damages) of the inhomogeneous grid oxidation film that causes of the charging of wafer.
In order to prevent these unfavorable conditions, as shown in Figure 5, in the present embodiment, the 18a of main body with brace table 2 opposed surfaces on form dielectric film 18b, on this surface, form conductive layer 18c again, constitute upper electrode 18.As shown in Figure 6, in this state, when producing high-frequency plasma, because on the counter surface of upper electrode 18, electric current flows in radial direction (direction in the face) easily, radial direction current potential on the counter surface of upper electrode 18 is even, on the counter surface of upper electrode 18, greatly reduces the electric potential gradient of radial direction.Utilize this effect,, inject in formation as the ion energy distribution on the brace table 2 of the lower electrode of negative electrode also homogenizing owing to do not having gradient as near the plasma potential the upper electrode 18 of anode.In addition, the homogenizing of ion energy is owing to make plasma generate the electron energy homogenizing, so electron density distribution also becomes even.Like this, can improve the inner evenness of etch processes, in addition, the charging that can reduce the insulation breakdown etc. of grid oxidation film damages.
In order to bring into play this function, the resistance of preferred conductive layer 18c radial direction is little, is ρ [Ω m in the resistivity of the material of conductive layer 18c
2/ m], thickness is t[m] situation under, represent with following (1) formula, use ρ/t[Ω briefly] the resistance R r[Ω of the radial direction of the conductive layer 18c of expression] satisfy:
R
r[Ω]＝ρ/t[Ω]≤1000[Ω]
[several 1]
In addition, represent, use ρ t[Ω briefly with following (2) formula] the resistance R z[Ω of thickness direction of the conductive layer 18c of expression] satisfy:
R
z[Ω]＝ρ·t[Ω]≤1[Ω]
[several 2]
As the material of conductive layer 18c, can use Cu, Si, SiC, W, C (carbon) etc.As the material of conductive layer 18c, below the preferred resistivity 100 Ω cm.
The preferred following formula of the thickness of conductive layer 18c is represented more than the skin depth δ.
δ=(2/ ω σ μ)
1/2(in the formula, σ: conductance, μ: magnetic susceptibility, ω: the angular frequency that generates the high frequency electric source of plasma)
High-frequency current only partly flows at the epidermis of parts, and the thickness of the part that high-frequency current flows is skin depth δ.When the thickness of the conductive layer 18c situation littler than skin depth δ, high-frequency current also flows in the rear side of conductive layer 18c, and energy loss is big.
In the present embodiment, because formerly the dielectric film 18b with defencive function that uses goes up formation conductive layer 18c, therefore can have and previous same defencive function, and can obtain above-mentioned effect.In addition, by on existing upper electrode, conductive layer being set, can realize not needing to do big improved apparatus structure.
As described above, the area of preferred conductive layer 18c like this, can more improve the effect that makes the Potential distribution homogenizing with more than the area of wafer W equates.And for example shown in Figure 7, by form conductive surface's layer 1b on the inner wall surface of chamber 1, electric current is easier to flow, and can more improve the effect of Potential distribution homogenizing.In Fig. 7, conductive surface's layer 1b can be continuous but discontinuous also passable with the conductive layer 18c that forms on brace table 2 side surfaces of upper electrode 18.
In said structure, conductive layer 18c forms by dielectric film 18b, becomes the floating of D.C. isolation.But as shown in Figure 8, variable DC power supply 55 is connected with conductive layer 18c, also can passes through power supply 55 ground connection.
Be not the essential dielectric film 18b that forms on upper electrode 18, as Fig. 9, it is also passable to form direct conductive layer 18c on main body 18a.Like this, no matter the material of main body 18a how, can be realized desirable conductivity, can bring into play above-mentioned effect effectively.In this case, as conductive layer 18c, preferably use plasma-resistance and the high material of anti-wound property.
In addition, upper electrode 18 constitutes also passable by the single electric conductor with desirable conductivity.In this case, because plasma-resistance etc. become problem, preferably use for example complex of metal-ceramic such as SiC-Al, SiC-Si of the high conductive material of plasma-resistance.
Secondly, the experiment of confirming effect of the present invention is described.
At first, prepare on the counter surface of body, to form the Y of 250 μ m as upper electrode
2O
3Sputtered films of bismuth (before) pastes the Cu band more thereon as conductive layer, and sticks the Si band, carries out the plasma treatment of wafer.Use the 300mm wafer as wafer,, use the electrode of diameter as 340mm as upper electrode.Plasma treatment utilization device as shown in Figure 1 is 0.66Pa at cavity indoor pressure, and processing gas is O
2Gas, flow are 200mL/min, and the frequency of high frequency is 100MHz, and High frequency power is to carry out under the condition of 500W, 2400W.Utilization will be popped one's head in and be inserted in the chamber, obtain the plasma potential of each position directly over the wafer at this moment, ask plasma potential Vf to be opposite in the face of earthing potential (GND) and distribute.
Figure 10 uses as the upper electrode of conduction laminating Cu band and previous upper electrode for expression, making High frequency power is 500W, carry out the result of plasma treatment, Figure 11 represents to use as the upper electrode of conduction laminating Si band and previous upper electrode, make High frequency power (a) be 500W, (b) be 2400W, carry out the result of plasma treatment.As shown in these figures, by on the counter surface of upper electrode conductive layer being set, the inner evenness of plasma potential is very good.
Secondly, prepare as the Y that on the counter surface of main body, forms 250 μ m
2O
3Sputtered films of bismuth pasted the Cu band thereon as conductive layer again as upper electrode (before), carried out the plasma treatment of test wafer, the patience that test charge damages.Use in test structural detail as shown in figure 12.That is, on Si substrate 61, form the SiO of the element separated region 62b of grid oxidation film considerable part 62a with thickness 4nm and thickness 500nm
2Film forms polysilicon film 63 more thereon, forms a plurality of this elements on wafer.The area A of element separated region 62b is set at 100,000 times of area B of grid oxidation film considerable part 62a and bigger, makes the structure that easy generation charging damages like this than common element.The condition of plasma treatment is for using the 300mm wafer as wafer, use diameter as the electrode of 340mm as upper electrode.Using device shown in Figure 1, is 0.66Pa at cavity indoor pressure, and processing gas is O
2Gas, flow are 200mL/min, and the frequency of high frequency is 100MHz, and High frequency power is to carry out plasma treatment under the condition of 500W.Measure the leakage current of each element at this moment, when leakage current is 1 * 10
-9A/ μ m
2When above, produce insulation breakdown, during than its little value, do not have insulation breakdown.
The result is illustrated among Figure 13.As shown in the drawing, use on the surface of not establishing conductive layer under the situation of upper electrode of dielectric film, in majority element, produce insulation breakdown, what do not have insulation breakdown is no more than 43%.Relative with it, under the situation of subsides on the upper electrode surface, all do not produce insulation breakdown as the Cu band of conductive layer.
The present invention only limits to execution mode, can do various changes.For example, in the above-described embodiment, a plurality of sector magnets that utilization will be made by permanent magnet, be circular be configured in chamber around the annulus magnet of the multipole state that constitutes, around the processing space, form magnetic field, but this magnetic field formation device is optional.In addition, in the present embodiment, represented in plasma-etching apparatus, to use under the situation of the present invention, but, also can use in sputter etc., other plasma treatment at plasma CVD.In addition, at other apparatus structure, aspects such as the material of conductive layer neither only limit to above-mentioned execution mode, can use various structure and materials.In addition, in the above-described embodiment, represented to use the situation of semiconductor wafer, but be not to only limit to this, in the plasma treatment of other substrates, also can use as processed substrate.
Claims (16)
1. capacitive coupling plasma processing apparatus has:
Remain on the chamber in the vacuum atmosphere;
First and second electrodes that in described chamber, dispose parallel to each other; With
Form high-frequency electric field between described first and second electrodes, the plasma that generates the plasma of handling gas generates mechanism, it is characterized in that:
The processed substrate of described first electrode supporting, and work as the negative electrode that applies High frequency power,
Described second electrode works as the anode of ground connection,
The surface with described first electrode contraposition of described second electrode is made of electric conductor.
2. capacitive coupling plasma processing apparatus has:
Remain on the chamber in the vacuum atmosphere;
First and second electrodes that in described chamber, dispose parallel to each other; With
Form high-frequency electric field between described first and second electrodes, the plasma that generates the plasma of handling gas generates mechanism, it is characterized in that:
The processed substrate of described first electrode supporting, and work as the negative electrode that applies High frequency power,
Described second electrode works as the anode of ground connection,
Described second electrode has main body and is located at described main body and lip-deep conductive layer described first electrode contraposition.
3. capacitive coupling plasma processing apparatus has:
Remain on the chamber in the vacuum atmosphere;
First and second electrodes that in described chamber, dispose parallel to each other; With
Form high-frequency electric field between described first and second electrodes, the plasma that generates the plasma of handling gas generates mechanism, it is characterized in that:
The processed substrate of described first electrode supporting, and work as the negative electrode that applies High frequency power,
Described second electrode works as the anode of ground connection,
Described second electrode have with the surface of described first electrode contraposition on be provided with the main body of dielectric film and be located at described main body and lip-deep conductive layer described first electrode contraposition.
4. plasma processing apparatus as claimed in claim 3 is characterized in that:
Described conductive layer is the floating of direct current.
5. plasma processing apparatus as claimed in claim 3 is characterized in that:
Also have the variable DC power supply that is connected with described conductive layer, described conductive layer is by described direct-current power supply earthing.
6. as each described plasma processing apparatus in the claim 2～5, it is characterized in that: the thickness of described conductive layer is more than the skin depth δ that represents of following formula,
δ＝(2/ωσμ)
1/2
σ in the formula: conductance, μ: magnetic susceptibility, ω: angular frequency.
7. as each described plasma processing apparatus in the claim 2～6, it is characterized in that: the area with the described first electrode contraposition side of described conductive layer is more than the area of the processed substrate that supported of described first electrode.
8. as each described plasma processing apparatus in the claim 2～7, it is characterized in that: the resistivity at the material of described conductive layer is ρ (Ω m
2/ m), when thickness was t (m), resistance ρ/t radially satisfied ρ/t≤1000.
9. as each described plasma processing apparatus in the claim 2～8, it is characterized in that: the resistivity at the material of described conductive layer is ρ (Ω m
2/ m), when thickness was t (m), the resistance ρ * t of thickness direction satisfied ρ * t≤1.
10. as each described plasma processing apparatus in the claim 2～9, it is characterized in that: described conductive layer is made by any material among Cu, Si, SiC, W, the C.
11. as each described plasma processing apparatus in the claim 2～10, it is characterized in that: on the inner wall surface of described chamber, have conductive surface's layer.
12. plasma processing apparatus as claimed in claim 1 is characterized in that:
Described second electrode is made of single electric conductor.
13. plasma processing apparatus as claimed in claim 12 is characterized in that:
Described second electrode is made of metal one ceramic composite.
14. as each described plasma processing apparatus in the claim 1,12 and 13, it is characterized in that: the area with the described first electrode contraposition side of described second electrode is more than the area of the processed substrate that supported of described first electrode.
15. as each described plasma processing apparatus in the claim 1,12,13 and 4, it is characterized in that: on the inner wall surface of described chamber, have conductive surface's layer.
16. as each described plasma processing apparatus in the claim 1～15, it is characterized in that: the frequency that is applied to the High frequency power on described first electrode is more than the 40MHz.
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| JP2004350995A JP2006165093A (en) | 2004-12-03 | 2004-12-03 | Plasma processing device |
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