CN1875464A - 含有不饱和二羧酸和亚乙基脲的半导体用洗涤液组合物和洗涤方法 - Google Patents
含有不饱和二羧酸和亚乙基脲的半导体用洗涤液组合物和洗涤方法 Download PDFInfo
- Publication number
- CN1875464A CN1875464A CNA2004800317961A CN200480031796A CN1875464A CN 1875464 A CN1875464 A CN 1875464A CN A2004800317961 A CNA2004800317961 A CN A2004800317961A CN 200480031796 A CN200480031796 A CN 200480031796A CN 1875464 A CN1875464 A CN 1875464A
- Authority
- CN
- China
- Prior art keywords
- semiconductor wafer
- cleaning composition
- wafer cleaning
- weight
- unsaturated dicarboxylic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 133
- 239000000203 mixture Substances 0.000 title claims abstract description 132
- 238000004140 cleaning Methods 0.000 title claims abstract description 87
- 238000000034 method Methods 0.000 title claims abstract description 68
- YAMHXTCMCPHKLN-UHFFFAOYSA-N imidazolidin-2-one Chemical compound O=C1NCCN1 YAMHXTCMCPHKLN-UHFFFAOYSA-N 0.000 title abstract 5
- 150000001990 dicarboxylic acid derivatives Chemical class 0.000 title 1
- 239000002738 chelating agent Substances 0.000 claims abstract description 19
- 239000003960 organic solvent Substances 0.000 claims abstract description 19
- 239000004094 surface-active agent Substances 0.000 claims abstract description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000012545 processing Methods 0.000 claims abstract description 9
- 239000002253 acid Substances 0.000 claims abstract description 7
- 238000005406 washing Methods 0.000 claims description 57
- AWMNXQXKGOSXDN-GORDUTHDSA-N (e)-ethylideneurea Chemical compound C\C=N\C(N)=O AWMNXQXKGOSXDN-GORDUTHDSA-N 0.000 claims description 33
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 26
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 24
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 22
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 19
- 239000003513 alkali Substances 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 18
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 18
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 16
- 150000003009 phosphonic acids Chemical class 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 15
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 claims description 14
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 13
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 12
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 12
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 12
- 239000004615 ingredient Substances 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 12
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 11
- 239000011976 maleic acid Substances 0.000 claims description 11
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 11
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 10
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 claims description 10
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 9
- 235000019253 formic acid Nutrition 0.000 claims description 9
- RWIVICVCHVMHMU-UHFFFAOYSA-N n-aminoethylmorpholine Chemical compound NCCN1CCOCC1 RWIVICVCHVMHMU-UHFFFAOYSA-N 0.000 claims description 9
- JPIGSMKDJQPHJC-UHFFFAOYSA-N 1-(2-aminoethoxy)ethanol Chemical compound CC(O)OCCN JPIGSMKDJQPHJC-UHFFFAOYSA-N 0.000 claims description 8
- KKFDCBRMNNSAAW-UHFFFAOYSA-N 2-(morpholin-4-yl)ethanol Chemical compound OCCN1CCOCC1 KKFDCBRMNNSAAW-UHFFFAOYSA-N 0.000 claims description 8
- YSAANLSYLSUVHB-UHFFFAOYSA-N 2-[2-(dimethylamino)ethoxy]ethanol Chemical compound CN(C)CCOCCO YSAANLSYLSUVHB-UHFFFAOYSA-N 0.000 claims description 8
- WFCSWCVEJLETKA-UHFFFAOYSA-N 2-piperazin-1-ylethanol Chemical compound OCCN1CCNCC1 WFCSWCVEJLETKA-UHFFFAOYSA-N 0.000 claims description 8
- UIKUBYKUYUSRSM-UHFFFAOYSA-N 3-morpholinopropylamine Chemical compound NCCCN1CCOCC1 UIKUBYKUYUSRSM-UHFFFAOYSA-N 0.000 claims description 8
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims description 8
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 8
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 claims description 8
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 8
- IMUDHTPIFIBORV-UHFFFAOYSA-N aminoethylpiperazine Chemical compound NCCN1CCNCC1 IMUDHTPIFIBORV-UHFFFAOYSA-N 0.000 claims description 8
- 229940031098 ethanolamine Drugs 0.000 claims description 8
- 235000019260 propionic acid Nutrition 0.000 claims description 8
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims description 8
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 claims description 5
- 229930195725 Mannitol Natural products 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 5
- 239000000174 gluconic acid Substances 0.000 claims description 5
- 235000012208 gluconic acid Nutrition 0.000 claims description 5
- 239000000594 mannitol Substances 0.000 claims description 5
- 235000010355 mannitol Nutrition 0.000 claims description 5
- 229910000069 nitrogen hydride Inorganic materials 0.000 claims description 5
- HWJSDSLWRKEWOL-UHFFFAOYSA-N 3-(2-aminoethylamino)-2-methylpropanenitrile Chemical compound N#CC(C)CNCCN HWJSDSLWRKEWOL-UHFFFAOYSA-N 0.000 claims description 4
- NSQSYCXRUVZPKI-UHFFFAOYSA-N 3-(2-aminoethylamino)propanenitrile Chemical compound NCCNCCC#N NSQSYCXRUVZPKI-UHFFFAOYSA-N 0.000 claims description 4
- AXPZIVKEZRHGAS-UHFFFAOYSA-N 3-benzyl-5-[(2-nitrophenoxy)methyl]oxolan-2-one Chemical compound [O-][N+](=O)C1=CC=CC=C1OCC1OC(=O)C(CC=2C=CC=CC=2)C1 AXPZIVKEZRHGAS-UHFFFAOYSA-N 0.000 claims description 4
- VZKSLWJLGAGPIU-UHFFFAOYSA-N 3-morpholin-4-ylpropan-1-ol Chemical compound OCCCN1CCOCC1 VZKSLWJLGAGPIU-UHFFFAOYSA-N 0.000 claims description 4
- UVLSCMIEPPWCHZ-UHFFFAOYSA-N 3-piperazin-1-ylpropan-1-amine Chemical compound NCCCN1CCNCC1 UVLSCMIEPPWCHZ-UHFFFAOYSA-N 0.000 claims description 4
- LWEOFVINMVZGAS-UHFFFAOYSA-N 3-piperazin-1-ylpropan-1-ol Chemical compound OCCCN1CCNCC1 LWEOFVINMVZGAS-UHFFFAOYSA-N 0.000 claims description 4
- SFESDDWDFUDTKB-UHFFFAOYSA-N CC(C(O)(CCC)N)(C)C Chemical compound CC(C(O)(CCC)N)(C)C SFESDDWDFUDTKB-UHFFFAOYSA-N 0.000 claims description 4
- FBPFZTCFMRRESA-KVTDHHQDSA-N D-Mannitol Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-KVTDHHQDSA-N 0.000 claims description 4
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 claims description 4
- -1 alkyl glucoside Chemical class 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 235000010323 ascorbic acid Nutrition 0.000 claims description 4
- 229960005070 ascorbic acid Drugs 0.000 claims description 4
- 239000011668 ascorbic acid Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 4
- 239000004327 boric acid Substances 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- HNEGQIOMVPPMNR-IHWYPQMZSA-N citraconic acid Chemical compound OC(=O)C(/C)=C\C(O)=O HNEGQIOMVPPMNR-IHWYPQMZSA-N 0.000 claims description 4
- 229940018557 citraconic acid Drugs 0.000 claims description 4
- 229930182478 glucoside Natural products 0.000 claims description 4
- QATBRNFTOCXULG-UHFFFAOYSA-N n'-[2-(methylamino)ethyl]ethane-1,2-diamine Chemical compound CNCCNCCN QATBRNFTOCXULG-UHFFFAOYSA-N 0.000 claims description 4
- UKODFQOELJFMII-UHFFFAOYSA-N pentamethyldiethylenetriamine Chemical compound CN(C)CCN(C)CCN(C)C UKODFQOELJFMII-UHFFFAOYSA-N 0.000 claims description 4
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 4
- 238000003754 machining Methods 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims 3
- 239000000470 constituent Substances 0.000 claims 3
- 239000000463 material Substances 0.000 abstract description 4
- 150000007513 acids Chemical class 0.000 abstract description 2
- 150000001991 dicarboxylic acids Chemical class 0.000 abstract 5
- 150000007514 bases Chemical class 0.000 abstract 1
- 150000001735 carboxylic acids Chemical class 0.000 abstract 1
- 150000002689 maleic acids Chemical class 0.000 abstract 1
- 235000011007 phosphoric acid Nutrition 0.000 abstract 1
- 150000003016 phosphoric acids Chemical class 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 42
- 239000010949 copper Substances 0.000 description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 13
- 229910052802 copper Inorganic materials 0.000 description 13
- 239000010410 layer Substances 0.000 description 12
- 238000004380 ashing Methods 0.000 description 10
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 9
- 239000005751 Copper oxide Substances 0.000 description 9
- 230000008901 benefit Effects 0.000 description 9
- 229910000431 copper oxide Inorganic materials 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 5
- 150000001412 amines Chemical class 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical class [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 3
- 238000000399 optical microscopy Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- LLQHSBBZNDXTIV-UHFFFAOYSA-N 6-[5-[[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]methyl]-4,5-dihydro-1,2-oxazol-3-yl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC1CC(=NO1)C1=CC2=C(NC(O2)=O)C=C1 LLQHSBBZNDXTIV-UHFFFAOYSA-N 0.000 description 1
- 229910021594 Copper(II) fluoride Inorganic materials 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- LXPFGQDXGOGAQP-UHFFFAOYSA-N N1C(NCC1)=O.C(C)=NC(=O)N Chemical compound N1C(NCC1)=O.C(C)=NC(=O)N LXPFGQDXGOGAQP-UHFFFAOYSA-N 0.000 description 1
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- GWFAVIIMQDUCRA-UHFFFAOYSA-L copper(ii) fluoride Chemical compound [F-].[F-].[Cu+2] GWFAVIIMQDUCRA-UHFFFAOYSA-L 0.000 description 1
- 229940113088 dimethylacetamide Drugs 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000004451 qualitative analysis Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/24—Cleaning or pickling metallic material with solutions or molten salts with neutral solutions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/662—Carbohydrates or derivatives
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2082—Polycarboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/32—Amides; Substituted amides
- C11D3/323—Amides; Substituted amides urea or derivatives thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3272—Urea, guanidine or derivatives thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2003—Alcohols; Phenols
- C11D3/2041—Dihydric alcohols
- C11D3/2044—Dihydric alcohols linear
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Emergency Medicine (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Molecular Biology (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Abstract
本发明的课题在于提供含有不饱和二羧酸和亚乙基脲的半导体用洗涤液组合物和洗涤方法。本发明通过提供下述组合物而解决了上述课题，即，一种组合物，其是在半导体晶片的加工工艺中为了洗涤残留物而使用的组合物，所述组合物含有不饱和二羧酸和亚乙基脲作为必须成分。在不饱和二羧酸中，特别优选马来酸。优选的该组合物含有不饱和二羧酸、亚乙基脲、除不饱和二羧酸以外的至少1种其他有机羧酸、除亚乙基脲以外的至少1种其他碱性化合物，和水。另外，在该优选的该组合物中，作为任意成分，可以加入选自有机溶剂、螯合剂、表面活性剂以及膦酸和/或次磷酸中的至少1种物质。
Description
技术领域
本发明大体涉及在半导体晶片加工中使用的化学组合物，特别是涉及可以除去光致抗蚀剂的等离子体灰化后的残留物的化学组合物。本发明特别涉及一种可以除去半导体晶片上的残留物的化学组合物，所述半导体晶片具有化学上不稳定的铜布线和低介电常数、超低介电常数层间绝缘膜。
背景技术
近年来，伴随着半导体晶片的微细化，推动了下述半导体晶片的开发，所述半导体晶片为了降低布线电阻，在布线材料中使用铜，为了降低布线间容量，使用了介电常数为3.0或其以下的低介电常数层间绝缘膜(low-k膜)和超低介电常数层间绝缘膜(ultra low-k膜)。作为代表性的晶片，可以列举出单镶嵌结构和双镶嵌结构的晶片。
在对布线材料、层间绝缘膜材料等形成图形时，主流是以光致抗蚀剂作为掩模来进行干蚀刻，然后为了除去光致抗蚀剂而进行等离子体灰化。
现有技术叙述了，为了在等离子体灰化工序后除去残留物、洗涤晶片，而使用各种化学组合物。其中大部分是碱性胺类(例如，参考专利文献1)，和氟化合物类(例如，参考专利文献2)的组合物，另外，也报道了一部分以有机羧酸作为基础的组合物(例如，参考专利文献3)。
专利文献1：美国专利第5334332号说明书
专利文献2：欧洲专利第662705号说明书
专利文献3：美国专利公开第2003/0143495A1号公报
发明内容
但是，这些组合物都有将不需要除去的铜等的布线金属、或低介电常数和超低介电常数层间绝缘膜除去的情况。因此，人们需要一种在抗蚀剂灰化后的工序中，能够有效率地除去残留物，且对布线金属、低介电常数、超低介电常数层间绝缘膜没有影响的化学组合物。
本发明大体涉及在半导体晶片加工中使用的化学组合物，特别是涉及可以除去光致抗蚀剂的等离子体灰化后的残留物的化学组合物。
即，本发明涉及以下的[1]～[12]的发明。
[1]一种在半导体晶片的加工工艺中使用的半导体晶片洗涤用组合物，含有(a)不饱和二羧酸和(b)亚乙基脲(2-咪唑烷酮)。
[2]如[1]所述的半导体晶片洗涤用组合物，是进一步加入(c)除不饱和二羧酸以外的至少1种其他有机羧酸、(d)除亚乙基脲以外的至少1种其他碱性化合物和(e)水而成的。
[3]如[2]所述的半导体晶片洗涤用组合物，是进一步加入选自(f)有机溶剂、(g)螯合剂、(h)表面活性剂以及(i)膦酸和/或次磷酸中的至少1种而成的。
[4]如上述[1]～[3]的任一项所述的半导体晶片洗涤用组合物，分别以如下所示的重量百分比(相对于本组合物的总重量)含有(a)～(i)的各成分，
(a)不饱和二羧酸 1～9重量％
(b)亚乙基脲 1～20重量％
(c)除不饱和二羧酸以外的至少1种其他有机羧酸
1～20重量％
(d)除亚乙基脲以外的至少1种其他碱性化合物
0.1～50重量％
(e)水 2～90重量％
(f)有机溶剂 1～20重量％
(g)螯合剂 0.01～5重量％
(h)表面活性剂 0.01～0.2重量％
(i)膦酸和/或次磷酸 0.5～5重量％。
[5]一种在半导体晶片的加工工艺中，通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述半导体晶片洗涤用组合物含有(a)不饱和二羧酸和(b)亚乙基脲。
[6]如[5]所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述半导体晶片洗涤用组合物是进一步加入(c)除不饱和二羧酸以外的至少1种其他有机羧酸、(d)除亚乙基脲以外的至少1种其他碱性化合物和(e)水而成的。
[7]如[6]所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述半导体晶片洗涤用组合物是进一步加入选自(f)有机溶剂、(g)螯合剂、(h)表面活性剂以及(i)膦酸和/或次磷酸中的至少1种而成的。
[8]如上述[5]～[8]的任一项所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述半导体晶片洗涤用组合物分别以如下所示的重量百分比(相对于本组合物的总重量)含有(a)～(i)的各成分，
(a)不饱和二羧酸 1～9重量％
(b)亚乙基脲 1～20重量％
(c)除不饱和二羧酸以外的至少1种其他有机羧酸
1～20重量％
(d)除亚乙基脲以外的至少1种其他碱性化合物
0.1～50重量％
(e)水 2～90重量％
(f)有机溶剂 1～20重量％
(g)螯合剂 0.01～5重量％
(h)表面活性剂 0.01～0.2重量％
(i)膦酸和/或次磷酸 0.5～5重量％。
[9]一种通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述半导体晶片洗涤用组合物用于半导体晶片加工工艺中的下述各工序中，并含有以下成分：(a)不饱和二羧酸和(b)亚乙基脲，所述各工序为，(1)形成过孔后的洗涤工序、(2)形成布线沟后的洗涤工序、(3)蚀刻阻挡膜穿孔后的洗涤工序、(4)CMP(化学机械研磨)后的洗涤工序。
[10]如[9]所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述半导体晶片洗涤用组合物是进一步加入(c)除不饱和二羧酸以外的至少1种其他有机羧酸、(d)除亚乙基脲以外的至少1种其他碱性化合物、和(e)水而成的。
[11]如[11]所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述半导体晶片洗涤用组合物是进一步加入选自(f)有机溶剂、(g)螯合剂、(h)表面活性剂以及(i)膦酸和/或次磷酸中的至少1种而成的。
[12]如[9]～[13]的任一项所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述半导体晶片洗涤用组合物分别以如下所示的重量百分比(相对于本组合物的总重量)含有(a)～(i)的各成分，
(a)不饱和二羧酸 1～9重量％
(b)亚乙基脲 1～20重量％
(c)除不饱和二羧酸以外的至少1种其他有机羧酸
1～20重量％
(d)除亚乙基脲以外的至少1种其他碱性化合物
0.1～50重量％
(e)水 2～90重量％
(f)有机溶剂 1～20重量％
(g)螯合剂 0.01～5重量％
(h)表面活性剂 0.01～0.2重量％
(i)膦酸和/或次磷酸 0.5～5重量％。
本发明的化学组合物对于在半导体晶片加工中生成的残留物的洗涤是有效的，特别对于等离子体灰化后的全部残留物的洗涤是有效的。
特别地，该组合物对于双镶嵌结构的晶片的洗涤是有效的。双镶嵌结构的晶片的加工工艺如下所示。
(1)堆积层间绝缘膜、蚀刻阻挡膜、和光致抗蚀剂等，进行干蚀刻和等离子体灰化，形成过孔。
(2)在过孔处堆积光致抗蚀剂等，用与上述同样的方法形成布线沟。
(3)通过穿孔来除去蚀刻阻挡膜。
(4)在过孔和布线沟中一并埋入铜，利用CMP(化学机械研磨)将最上部分的不需要的铜除去。
在(1)～(4)的各工序后为了除去残留物，分别引入洗涤工序，该组合物对于其所有的洗涤工序都是有效的。
即，该组合物的优点在于，可以有效率地除去等离子体灰化后的残留物。
另外，该组合物的优点在于，特别地可以有效率地除去蚀刻阻挡膜的穿孔残留物。一般来说很难在不破坏铜、低介电常数、超低介电常数层间绝缘膜的情况下，完全除去蚀刻阻挡膜的穿孔残留物，但该组合物可以在不破坏铜、低介电常数、超低介电常数层间绝缘膜的情况下，完全除去蚀刻阻挡膜的穿孔残留物。
进而，该组合物的优点在于，可以有效率地除去等离子体灰化后的氧化铜等的金属氧化物、氟化铜等的金属卤化物。
进而，该组合物的优点在于，可以有效率地除去CMP(化学机械研磨)后的氧化铜等的金属氧化物。
并且，该组合物的优点在于，在除去残留物的工序中，与目前的酸类洗涤液相比，对铜的腐蚀性极低。
另外，该组合物的很大的优点在于，在除去残留物的工序中，与目前的胺类、氟化铵类洗涤液相比，对低介电常数、超低介电常数层间绝缘膜的腐蚀性极低。
另外，该组合物的优点在于，在除去残留物的工序中，与目前的胺类、氟化铵类洗涤液相比，可以在更低的温度下发挥效果。
进而，该组合物的优点在于，在除去残留物的工序中，与目前的胺类、氟化铵类洗涤液相比，可以在更短的时间里发挥效果。
通过以下优选实施方式的详细说明，本领域技术人员能够很容易地理解本发明的上述及其他特征和优点。
具体实施方式
本发明包括化学组合物，所述化学组合物适合用于在半导体晶片加工的工序中洗涤在干蚀刻和等离子体灰化等时产生的残留物。该组合物含有(a)不饱和二羧酸和(b)亚乙基脲作为必须成分。在(a)不饱和二羧酸中，特别优选马来酸。优选的该组合物含有(a)不饱和二羧酸、(b)亚乙基脲、(c)除不饱和二羧酸以外的至少1种其他有机羧酸、(d)除亚乙基脲以外的至少1种其他碱性化合物和(e)水。另外，在该优选的该组合物中，作为任意成分，可以加入选自(f)有机溶剂、(g)螯合剂、(h)表面活性剂以及(i)膦酸和/或次磷酸中的至少1种。
该组合物的各成分的重量百分比(相对于本组合物的总重量)，可根据其除去的对象进行适当决定，但优选为
(a)不饱和二羧酸 1～9重量％
(b)亚乙基脲 1～20重量％
(c)除不饱和二羧酸以外的至少1种其他有机羧酸
1～20重量％
(d)除亚乙基脲以外的至少1种其他碱性化合物
0.1～50重量％
(e)水 2～90重量％
(f)有机溶剂 1～20重量％
(g)螯合剂 0.01～5重量％
(h)表面活性剂 0.01～0.2重量％
(i)膦酸和/或次磷酸 0.5～5重量％。
优选的(a)不饱和二羧酸为
(a-1)马来酸
(a-2)柠康酸，
特别优选为
(a-1)马来酸。
优选的(c)有机羧酸为
(c-1)甲酸(FA)
(c-2)乙酸(AA)
(c-3)丙酸(PA)。
优选的(d)碱性化合物为
(d-1)羟乙基哌嗪(HEP)、
(d-2)羟丙基哌嗪(HPP)、
(d-3)氨基乙基哌嗪(AEP)、
(d-4)氨基丙基哌嗪(APP)、
(d-5)羟乙基吗啉(HEM)、
(d-6)羟丙基吗啉(HPM)、
(d-7)氨基乙基吗啉(AEM)、
(d-8)氨基丙基吗啉(APM)、
(d-9)三乙醇胺(TEA)、
(d-10)五甲基二亚乙基三胺(PMDETA)、
(d-11)二甲基氨基乙氧基乙醇(DMAEE)、
(d-12)氨基乙氧基乙醇(AEE)、
(d-13)三甲基氨基乙基乙醇胺(TMAEEA)、
(d-14)三甲基氨基丙基乙醇胺(TMAPEA)、
(d-15)N-(2-氰基乙基)乙二胺(CEEDA)、和
(d-16)N-(2-氰基丙基)乙二胺(CPEDA)
(d-17)氨(NH3)。
优选的(f)有机溶剂为
(f-1)1，4-丁二醇(1，4-BD)、
(f-2)1，3-丁二醇(1，3-BD)、
(f-3)乙二醇(EG)、
(f-4)丙二醇(PG)、
(f-5)N-甲基吡咯烷酮(NMP)、
(f-6)γ-丁内酯(GBL)、
(f-7)丙二醇单甲基醚(PGME)、和
(f-8)丙二醇单甲基醚乙酸酯(PGMEA)。
优选的(g)螯合剂为
(g-1)抗坏血酸、
(g-2)葡糖酸、
(g-3)甘露糖醇、
(g-4)山梨糖醇、和
(g-5)硼酸。
优选的(h)表面活性剂为
(h-1)碳原子数为1～10的烷基葡糖苷。
本发明所包含的这些组合物中的各成分可以分别任意地组合。作为各成分组合的例子，可以列举出例如下述的第I表所示的组合。但是，第I表的组合是为了举例，本发明不仅仅限定于这些组合。
第I表
| (a) | (b) | (c) | (d) | (e) |
| (a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1) | (b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b) | (c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-2)(c-2)(c-2)(c-2)(c-2)(c-2)(c-2)(c-2)(c-2)(c-2)(c-2)(c-2)(c-2)(c-2)(c-2)(c-2) | (d-1)(d-2)(d-3)(d-4)(d-5)(d-6)(d-7)(d-8)(d-9)(d-10)(d-11)(d-12)(d-13)(d-14)(d-15)(d-16)(d-17)(d-1)(d-2)(d-3)(d-4)(d-5)(d-6)(d-7)(d-8)(d-9)(d-10)(d-11)(d-12)(d-13)(d-14)(d-15)(d-16) | (e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e) |
| (a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1) | (b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b) | (c-2)(c-3)(c-3)(c-3)(c-3)(c-3)(c-3)(c-3)(c-3)(c-3)(c-3)(c-3)(c-3)(c-3)(c-3)(c-3)(c-3)(c-3)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1) | (d-17)(d-1)(d-2)(d-3)(d-4)(d-5)(d-6)(d-7)(d-8)(d-9)(d-10)(d-11)(d-12)(d-13)(d-14)(d-15)(d-16)(d-17)(d-1)(d-2)(d-1)(d-3)(d-1)(d-4)(d-1)(d-5)(d-1)(d-6)(d-1)(d-7)(d-1)(d-8)(d-1)(d-9)(d-1)(d-10)(d-1)(d-11)(d-1)(d-12)(d-1)(d-13)(d-1)(d-14)(d-1)(d-15)(d-1)(d-16)(d-1)(d-17)(d-2)(d-1)(d-2)(d-3) | (e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e) |
| (a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1) | (b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b) | (c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1) | (d-2)(d-4)(d-2)(d-5)(d-2)(d-6)(d-2)(d-7)(d-2)(d-8)(d-2)(d-9)(d-2)(d-10)(d-2)(d-11)(d-2)(d-12)(d-2)(d-13)(d-2)(d-14)(d-2)(d-15)(d-2)(d-16)(d-2)(d-17)(d-3)(d-1)(d-3)(d-2)(d-3)(d-4)(d-3)(d-5)(d-3)(d-6)(d-3)(d-7)(d-3)(d-8)(d-8)(d-9)(d-3)(d-10)(d-3)(d-11)(d-3)(d-12)(d-3)(d-13)(d-3)(d-14)(d-3)(d-15)(d-3)(d-16)(d-3)(d-17)(d-4)(d-1)(d-4)(d-2)(d-4)(d-3)(d-4)(d-5)(d-4)(d-6)(d-4)(d-7) | (e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e) |
| (a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1) | (b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b) | (c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1) | (d-4)(d-8)(d-4)(d-9)(d-4)(d-10)(d-4)(d-11)(d-4)(d-12)(d-4)(d-13)(d-4)(d-14)(d-4)(d-15)(d-4)(d-16)(d-4)(d-17)(d-5)(d-1)(d-5)(d-2)(d-5)(d-3)(d-5)(d-4)(d-5)(d-6)(d-5)(d-7)(d-5)(d-8)(d-5)(d-9)(d-5)(d-10)(d-5)(d-11)(d-5)(d-12)(d-5)(d-13)(d-5)(d-14)(d-5)(d-15)(d-5)(d-16)(d-5)(d-17)(d-6)(d-1)(d-6)(d-2)(d-6)(d-3)(d-6)(d-4)(d-6)(d-5)(d-6)(d-7)(d-6)(d-8)(d-6)(d-9)(d-6)(d-10)(d 6)(d-11) | (e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e) |
| (a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1) | (b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b) | (c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1) | (d-6)(d-12)(d-6)(d-13)(d-6)(d-14)(d-6)(d-15)(d-6)(d-16)(d-6)(d-17)(d-7)(d-1)(d-7)(d-2)(d-7)(d-3)(d-7)(d-4)(d-7)(d-5)(d-7)(d-6)(d-7)(d-8)(d-7)(d-9)(d-7)(d-10)(d-7)(d-11)(d-7)(d-12)(d-7)(d-13)(d-7)(d-14)(d-7)(d-15)(d-7)(d-16)(d-7)(d-17)(d-8)(d-1)(d-8)(d-2)(d-8)(d-3)(d-8)(d-4)(d-8)(d-5)(d-8)(d-6)(d-8)(d-7)(d-8)(d-9)(d-8)(d-10)(d-8)(d-11)(d-8)(d-12)(d-8)(d-13)(d-8)(d-14)(d-8)(d-15) | (e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e) |
| (a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1) | (b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b) | (c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1) | (d-8)(d-16)(d-8)(d-17)(d-9)(d-1)(d-9)(d-2)(d-9)(d-3)(d-9)(d-4)(d-9)(d-5)(d-9)(d-6)(d-9)(d-7)(d-9)(d-8)(d-9)(d-10)(d-9)(d-11)(d-9)(d-12)(d-9)(d-13)(d-9)(d-14)(d-9)(d-15)(d-9)(d-16)(d-9)(d-17)(d-10)(d-1)(d-10)(d-2)(d-10)(d-3)(d-10)(d-4)(d-10)(d-5)(d-10)(d-6)(d-10)(d-7)(d-10)(d-8)(d-10)(d-9)(d-10)(d-11)(d-10)(d-12)(d-10)(d-13)(d-10)(d-14)(d-10)(d-15)(d-10)(d-16)(d-10)(d-17)(d-11)(d-1)(d-11)(d-2) | (e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e) |
| (a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1) | (b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b) | (c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1) | (d-11)(d-3)(d-11)(d-4)(d-11)(d-5)(d-11)(d-6)(d-11)(d-7)(d-11)(d-8)(d-11)(d-9)(d-11)(d-10)(d-11)(d-12)(d-11)(d-13)(d-11)(d-14)(d-11)(d-15)(d-11)(d-16)(d-11)(d-17)(d-12)(d-1)(d-12)(d-2)(d-12)(d-3)(d-12)(d-4)(d-12)(d-5)(d-12)(d-6)(d-12)(d-7)(d-12)(d-8)(d-12)(d-9)(d-12)(d-10)(d-12)(d-11)(d-12)(d-13)(d-12)(d-14)(d-12)(d-15)(d-12)(d-16)(d-12)(d-17)(d-13)(d-1)(d-13)(d-2)(d-13)(d-3)(d-13)(d-4)(d-13)(d-5)(d-13)(d-6) | (e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e) |
| (a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1) | (b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b) | (c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1) | (d-13)(d-7)(d-13)(d-8)(d-13)(d-9)(d-13)(d-10)(d-13)(d-11)(d-13)(d-12)(d-13)(d-14)(d-13)(d-15)(d-13)(d-16)(d-13)(d-17)(d-14)(d-1)(d-14)(d-2)(d-14)(d-3)(d-14)(d-4)(d-14)(d-5)(d-14)(d-6)(d-14)(d-7)(d-14)(d-8)(d-14)(d-9)(d-14)(d-10)(d-14)(d-11)(d-14)(d-12)(d-14)(d-13)(d-14)(d-15)(d-14)(d-16)(d-14)(d-17)(d-15)(d-1)(d-15)(d-2)(d-15)(d-3)(d-15)(d-4)(d-15)(d-5)(d-15)(d-6)(d-15)(d-7)(d-15)(d-8)(d-15)(d-9)(d-15)(d-10) | (e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e) |
| (a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1)(a-1) | (b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b)(b) | (c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1)(c-1) | (d-15)(d-11)(d-15)(d-12)(d-15)(d-13)(d-15)(d-14)(d-15)(d-16)(d-l5)(d-17)(d-16)(d-1)(d-16)(d-2)(d-16)(d-3)(d-16)(d-4)(d-16)(d-5)(d-16)(d-6)(d-16)(d-7)(d-16)(d-8)(d-16)(d-9)(d-16)(d-10)(d-16)(d-11)(d-16)(d-12)(d-16)(d-13)(d-16)(d-14)(d-16)(d-15)(d-16)(d-17)(d-17)(d-1)(d-17)(d-2)(d-17)(d-3)(d-17)(d-4)(d-17)(d-5)(d-17)(d-6)(d-17)(d-7)(d-17)(d-8)(d-17)(d-9)(d-17)(d-10)(d-17)(d-11)(d-17)(d-12)(d-17)(d-13)(d-17)(d-14)(d-17)(d-15)(d-17)(d-16) | (e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(c)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e)(e) |
该组合物的pH值为1～5，优选为2～4。
该组合物的使用温度，只要是能够完全除去残留物的范围的温度，就没有限定，例如，在21～40℃的低温下能够得到充分的效果。
该组合物的使用时间，只要是能够完全除去残留物的范围的时间，就没有限定，例如，在1～5分钟的短时间内能够得到充分的效果。
对于该组合物的使用方法，只要该组合物可以接触到含有残留物的半导体晶片，就没有特别的限定，但优选使用分批式、单片式洗涤装置。
另外，在半导体晶片的加工工艺中，只要晶片中有残留物，就可以使用该组合物，例如，可以用于(1)形成过孔后的洗涤工序、(2)形成布线沟后的洗涤工序、(3)蚀刻阻挡膜穿孔后的洗涤工序、(4)CMP(化学机械研磨)后的洗涤工序。
实施例
下面，列举实施例来说明本发明，但是本发明不限定于这些实施例。
1)氧化铜的除去性评价试验
用O2等离子体(250℃、照射120秒)处理β铜膜，将得到的氧化铜晶片用于评价。将其在实施例1～15和比较例1～6的组合物中在40℃浸渍2分钟，然后水洗晶片，风干。
氧化铜的除去性可以通过利用光学显微镜进行目视观察和利用X射线光电子分光分析法(XPS：岛津制作所制ESCA3200)，对晶片表面上的铜价数进行定性分析来综合判断。
实施例1～15、比较例1～6的组合物的各组成和试验结果示于表1～表3。另外，氧化铜的除去性如下述那样进行评价。
○：用光学显微镜观察为黄色、用XPS测定不能检测到Cu2+的峰
×：用光学显微镜观察为红铜色、用XPS测定可以检测到Cu2+的峰
表1(数值为相对于全体组合物的重量％)
| 实施例 | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |
| 水 | 55 | 55 | 55 | 55 | 55 | 55 | 55 | 55 | 55 | 55 | 55 | 55 | 55 | 78.8 | 78.8 |
| 马来酸 | 5 | 5 | 5 | 5 | 5 | 5 | 5 | 5 | 5 | 5 | 5 | 5 | 5 | 5 | 5 |
| 亚乙基脲 | 5 | 5 | 20 | 5 | 5 | 5 | 5 | 5 | 5 | 5 | 5 | 5 | 5 | 5 | 5 |
| 甲酸 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 4.2 | 4.2 |
| 1，4-丁二醇 | - | - | - | - | - | 5 | 5 | - | - | - | - | - | - | - | - |
| 乙二醇 | - | - | - | - | - | - | - | 5 | 5 | - | - | - | - | - | - |
| TEA | 20 | 20 | 5 | - | - | - | - | 15 | 15 | 15 | 15 | 20 | 20 | 5 | 5 |
| TMAEEA | - | - | - | 20 | 20 | 15 | 15 | - | - | - | - | - | - | - | - |
| AEM | 5 | - | 5 | 5 | - | 5 | - | 5 | - | 5 | 5 | 5 | 5 | - | - |
| AEP | - | 5 | - | - | 5 | - | 5 | - | 5 | - | - | - | - | - | - |
| NH3 | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.2 | 1.2 |
| 葡糖酸 | - | - | - | - | - | - | - | - | - | 5 | - | - | - | - | - |
| 甘露糖醇 | - | - | - | - | - | - | - | - | - | - | 5 | - | - | - | - |
| 甲基葡糖苷 | - | - | - | - | - | - | - | - | - | - | - | 0.15 | - | - | - |
| 癸基葡糖苷 | - | - | - | - | - | - | - | - | - | - | - | - | 0.15 | - | - |
| 膦酸 | 0.8 | - | |||||||||||||
| 次磷酸 | - | 0.8 | |||||||||||||
| 氧化铜除去性 | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ |
表2(数值为相对于总组合物的重量％)
| 比较例 | 1 | 2 | 3 | 4 |
| 水 | 55 | 55 | 55 | 55 |
| 马来酸 | - | - | 5 | 10 |
| 丙二酸 | 5 | - | - | - |
| 丙烯酸 | - | 5 | - | - |
| 亚乙基脲 | 5 | 5 | - | 5 |
| 甲酸 | 10 | 10 | - | 5 |
| TEA | 20 | 20 | 20 | 20 |
| AEM | 5 | 5 | 15 | 5 |
| 氧化铜除去性 | × | × | × | × |
表3(数值为相对于总组合物的重量％)
| 比较例 | 5 | 6 |
| 水 | 29 | - |
| NH4F | 1 | - |
| 二甲基乙酰胺 | 60 | - |
| 二甘醇单甲基醚 | 10 | - |
| 单乙醇胺 | - | 30 |
| 二甲基亚砜 | - | 70 |
| 氧化铜除去性 | × | × |
2)对于低介电常数和超低介电常数层间绝缘膜、以及蚀刻阻挡膜的穿孔残留物的除去性的评价试验
对于本发明中的该组合物的评价，使用了具有蚀刻阻挡膜的穿孔残留物的双镶嵌或单镶嵌结构的洗涤评价用晶片。
将该晶片在40℃的该组合物中浸渍5分钟，然后水洗晶片，并风干，利用扫描电子显微镜(SEM)来评价蚀刻阻挡膜的穿孔残留物的除去效果，和铜以及低介电常数、超低介电常数层间绝缘膜的腐蚀性。
优选的组合物可以在不破坏铜、低介电常数、超低介电常数层间绝缘膜的情况下，完全除去蚀刻阻挡膜的穿孔残留物。另外，也可以完全除去低介电常数、超低介电常数层间绝缘膜的蚀刻残留物。
优选的组合物是评价最高的组合物，但是基于除去效果和低腐蚀性这两方面，全部的性能大体相同。
本发明记述了特定的优选实施方式，但是只要不脱离本发明的主旨和范围，即使进行各种变换和改良，也能被本领域技术人员所理解。因此，下述权利要求旨在包含这样的所有的变换和改良，也包含本发明的主旨和范围。
Claims (42)
1.一种用于半导体晶片加工工艺中的半导体晶片洗涤用组合物，含有不饱和二羧酸和亚乙基脲。
2.如权利要求1所述的半导体晶片洗涤用组合物，其特征在于，为水溶液。
3.如权利要求2所述的半导体晶片洗涤用组合物，各成分的浓度表示如下，不饱和二羧酸为1～9重量％、亚乙基脲为1～20重量％。
4.如权利要求2所述的半导体晶片洗涤用组合物，进一步含有除不饱和二羧酸以外的至少1种其他有机羧酸、和除亚乙基脲以外的至少1种其他碱性化合物。
5.如权利要求4所述的半导体晶片洗涤用组合物，各成分的浓度表示如下，不饱和二羧酸为1～9重量％、亚乙基脲为1～20重量％、除不饱和二羧酸以外的至少1种其他有机羧酸为1～20重量％、除亚乙基脲以外的至少1种其他碱性化合物为0.1～50重量％，水为20～90重量％。
6.如权利要求4所述的半导体晶片洗涤用组合物，所述不饱和二羧酸选自马来酸、柠康酸。
7.如权利要求4所述的半导体晶片洗涤用组合物，所述不饱和二羧酸为马来酸。
8.如权利要求4所述的半导体晶片洗涤用组合物，所述有机羧酸选自甲酸(FA)、乙酸(AA)、和丙酸(PA)。
9.如权利要求4所述的半导体晶片洗涤用组合物，所述碱性化合物选自
羟乙基哌嗪(HEP)、
羟丙基哌嗪(HPP)、
氨基乙基哌嗪(AEP)、
氨基丙基哌嗪(APP)、
羟乙基吗啉(HEM)、
羟丙基吗啉(HPM)、
氨基乙基吗啉(AEM)、
氨基丙基吗啉(APM)、
三乙醇胺(TEA)、
五甲基二亚乙基三胺(PMDETA)、
二甲基氨基乙氧基乙醇(DMAEE)、
氨基乙氧基乙醇(AEE)、
三甲基氨基乙基乙醇胺(TMAEEA)、
三甲基氨基丙基乙醇胺(TMAPEA)、
N-(2-氰基乙基)乙二胺(CEEDA)、和
N-(2-氰基丙基)乙二胺(CPEDA)
氨(NH3)。
10.如权利要求4所述的半导体晶片洗涤用组合物，进一步含有选自有机溶剂、螯合剂、表面活性剂，以及膦酸和/或次磷酸中的至少1种。
11.如权利要求10所述的半导体晶片洗涤用组合物，各成分浓度表示如下，有机溶剂为1～20重量％、螯合剂为0.01～5重量％、表面活性剂为0.01～0.2重量％、膦酸和/或次磷酸为0.5～5重量％。
12.如权利要求10所述的半导体晶片洗涤用组合物，所述有机溶剂选自
1，4-丁二醇(1，4-BD)、
1，3-丁二醇(1，3-BD)、
乙二醇(EG)、
丙二醇(PG)、
N-甲基吡咯烷酮(NMP)、
γ-丁内酯(GBL)、
丙二醇单甲基醚(PGME)、和
丙二醇单甲基醚乙酸酯(PGMEA)。
13.如权利要求10所述的半导体晶片洗涤用组合物，所述螯合剂选自抗坏血酸、葡糖酸、甘露糖醇、山梨糖醇、和硼酸。
14.如权利要求10所述的半导体晶片洗涤用组合物，所述表面活性剂是碳原子数为1至10的烷基葡糖苷。
15.一种用于半导体晶片的加工工艺中的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述半导体晶片洗涤用组合物含有不饱和二羧酸和亚乙基脲。
16.如权利要求15所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，其特征在于，所述半导体晶片洗涤用组合物为水溶液。
17.如权利要求16所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述半导体晶片洗涤用组合物的各成分的浓度表示如下，不饱和二羧酸为1～9重量％，亚乙基脲为1～20重量％。
18.如权利要求16所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述半导体晶片洗涤用组合物进一步含有除不饱和二羧酸以外的至少1种其他有机羧酸、和除亚乙基脲以外的至少1种其他碱性化合物。
19.如权利要求18所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述半导体晶片洗涤用组合物的各成分的浓度表示如下，不饱和二羧酸为1～9重量％、亚乙基脲为1～20重量％、除不饱和二羧酸以外的至少1种其他有机羧酸为1～20重量％、除亚乙基脲以外的至少1种其他碱性化合物为0.1～50重量％，水为20～90重量％。
20.如权利要求18所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述不饱和二羧酸选自马来酸、柠康酸。
21.如权利要求18所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述不饱和二羧酸为马来酸。
22.如权利要求18所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述有机羧酸选自甲酸(FA)、乙酸(AA)、和丙酸(PA)。
23.如权利要求18所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述碱性化合物选自
羟乙基哌嗪(HEP)、
羟丙基哌嗪(HPP)、
氨基乙基哌嗪(AEP)、
氨基丙基哌嗪(APP)、
羟乙基吗啉(HEM)、
羟丙基吗啉(HPM)、
氨基乙基吗啉(AEM)、
氨基丙基吗啉(APM)、
三乙醇胺(TEA)、
五甲基二亚乙基三胺(PMDETA)、
二甲基氨基乙氧基乙醇(DMAEE)、
氨基乙氧基乙醇(AEE)、
三甲基氨基乙基乙醇胺(TMAEEA)、
三甲基氨基丙基乙醇胺(TMAPEA)、
N-(2-氰基乙基)乙二胺(CEEDA)、和
N-(2-氰基丙基)乙二胺(CPEDA)
氨(NH3)。
24.如权利要求18所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述半导体晶片洗涤用组合物进一步含有选自有机溶剂、螯合剂、表面活性剂，以及膦酸和/或次磷酸中的至少1种。
25.如权利要求24所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述半导体晶片洗涤用组合物的各成分浓度表示如下，有机溶剂为1～20重量％、螯合剂为0.01～5重量％、表面活性剂为0.01～0.2重量％、膦酸和/或次磷酸为0.5～5重量％。
26.如权利要求24所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述有机溶剂选自
1，4-丁二醇(1，4-BD)、
1，3-丁二醇(1，3-BD)、
乙二醇(EG)、
丙二醇(PG)、
N-甲基吡咯烷酮(NMP)、
γ-丁内酯(GBL)、
丙二醇单甲基醚(PGME)、和
丙二醇单甲基醚乙酸酯(PGMEA)。
27.如权利要求24所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述螯合剂选自抗坏血酸、葡糖酸、甘露糖醇、山梨糖醇、和硼酸。
28.如权利要求24所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述表面活性剂是碳原子数为1～10的烷基葡糖苷。
29.一种使用半导体晶片洗涤用组合物的半导体晶片的洗涤方法，所述半导体晶片洗涤用组合物用于半导体晶片加工工艺中的下述各工序，并含有不饱和二羧酸和亚乙基脲，所述各工序为，
(1)形成过孔后的洗涤工序、(2)形成布线沟后的洗涤工序、(3)蚀刻阻挡膜穿孔后的洗涤工序、(4)CMP(化学机械研磨)后的洗涤工序。
30.如权利要求29所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，其特征在于，所述半导体晶片洗涤用组合物为水溶液。
31.如权利要求30所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述半导体晶片洗涤用组合物的各成分的浓度表示如下，不饱和二羧酸为1～9重量％，亚乙基脲为1～20重量％。
32.如权利要求30所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述半导体晶片洗涤用组合物进一步含有除不饱和二羧酸以外的至少1种其他有机羧酸、除亚乙基脲以外的至少1种其他碱性化合物、和水。
33.如权利要求32所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述半导体晶片洗涤用组合物的各成分的浓度表示如下，不饱和二羧酸为1～9重量％、亚乙基脲为1～20重量％、除不饱和二羧酸以外的至少1种其他有机羧酸为1～20重量％、除亚乙基脲以外的至少1种其他碱性化合物为0.1～50重量％，水为20～90重量％。
34.如权利要求32所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述不饱和二羧酸选自马来酸、柠康酸。
35.如权利要求32所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述不饱和二羧酸为马来酸。
36.如权利要求32所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述有机羧酸选自甲酸(FA)、乙酸(AA)、和丙酸(PA)。
37.如权利要求32所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述碱性化合物选自
羟乙基哌嗪(HEP)、
羟丙基哌嗪(HPP)、
氨基乙基哌嗪(AEP)、
氨基丙基哌嗪(APP)、
羟乙基吗啉(HEM)、
羟丙基吗啉(HPM)、
氨基乙基吗啉(AEM)、
氨基丙基吗啉(APM)、
三乙醇胺(TEA)、
五甲基二亚乙基三胺(PMDETA)、
二甲基氨基乙氧基乙醇(DMAEE)、
氨基乙氧基乙醇(AEE)、
三甲基氨基乙基乙醇胺(TMAEEA)、
三甲基氨基丙基乙醇胺(TMAPEA)、
N-(2-氰基乙基)乙二胺(CEEDA)、和
N-(2-氰基丙基)乙二胺(CPEDA)
氨(NH3)。
38.如权利要求32所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述半导体晶片洗涤用组合物进一步含有选自有机溶剂、螯合剂、表面活性剂，以及膦酸和/或次磷酸中的至少1种。
39.如权利要求38所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述半导体晶片洗涤用组合物的各成分浓度表示如下，有机溶剂为1～20重量％、螯合剂为0.01～5重量％、表面活性剂为0.01～0.2重量％、膦酸和/或次磷酸为0.5～5重量％。
40.如权利要求38所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述有机溶剂选自
1，4-丁二醇(1，4-BD)、
1，3-丁二醇(1，3-BD)、
乙二醇(EG)、
丙二醇(PG)、
N-甲基吡咯烷酮(NMP)、
γ-丁内酯(GBL)、
丙二醇单甲基醚(PGME)、和
丙二醇单甲基醚乙酸酯(PGMEA)。
41.如权利要求38所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述螯合剂选自抗坏血酸、葡糖酸、甘露糖醇、山梨糖醇、和硼酸。
42.如权利要求38所述的通过使用半导体晶片洗涤用组合物进行的半导体晶片的洗涤方法，所述表面活性剂是碳原子数为1～10的烷基葡糖苷。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/695,773 US6946396B2 (en) | 2003-10-30 | 2003-10-30 | Maleic acid and ethylene urea containing formulation for removing residue from semiconductor substrate and method for cleaning wafer |
| US10/695,773 | 2003-10-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1875464A true CN1875464A (zh) | 2006-12-06 |
| CN100421222C CN100421222C (zh) | 2008-09-24 |
Family
ID=34550005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004800317961A Expired - Fee Related CN100421222C (zh) | 2003-10-30 | 2004-10-27 | 含有不饱和二羧酸和亚乙基脲的半导体用洗涤液组合物和洗涤方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6946396B2 (zh) |
| EP (1) | EP1684337A4 (zh) |
| JP (1) | JPWO2005043610A1 (zh) |
| KR (1) | KR20060096062A (zh) |
| CN (1) | CN100421222C (zh) |
| TW (1) | TW200524028A (zh) |
| WO (1) | WO2005043610A1 (zh) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7799141B2 (en) | 2003-06-27 | 2010-09-21 | Lam Research Corporation | Method and system for using a two-phases substrate cleaning compound |
| US20040261823A1 (en) * | 2003-06-27 | 2004-12-30 | Lam Research Corporation | Method and apparatus for removing a target layer from a substrate using reactive gases |
| US7913703B1 (en) | 2003-06-27 | 2011-03-29 | Lam Research Corporation | Method and apparatus for uniformly applying a multi-phase cleaning solution to a substrate |
| US8522801B2 (en) | 2003-06-27 | 2013-09-03 | Lam Research Corporation | Method and apparatus for cleaning a semiconductor substrate |
| US7737097B2 (en) | 2003-06-27 | 2010-06-15 | Lam Research Corporation | Method for removing contamination from a substrate and for making a cleaning solution |
| US8316866B2 (en) * | 2003-06-27 | 2012-11-27 | Lam Research Corporation | Method and apparatus for cleaning a semiconductor substrate |
| US7648584B2 (en) * | 2003-06-27 | 2010-01-19 | Lam Research Corporation | Method and apparatus for removing contamination from substrate |
| KR20060115896A (ko) * | 2003-12-02 | 2006-11-10 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 레지스트, ｂａｒｃ 및 갭 필 재료 스트리핑 케미칼 및방법 |
| US7416370B2 (en) | 2005-06-15 | 2008-08-26 | Lam Research Corporation | Method and apparatus for transporting a substrate using non-Newtonian fluid |
| US7568490B2 (en) * | 2003-12-23 | 2009-08-04 | Lam Research Corporation | Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids |
| US7862662B2 (en) | 2005-12-30 | 2011-01-04 | Lam Research Corporation | Method and material for cleaning a substrate |
| US8323420B2 (en) | 2005-06-30 | 2012-12-04 | Lam Research Corporation | Method for removing material from semiconductor wafer and apparatus for performing the same |
| US8522799B2 (en) | 2005-12-30 | 2013-09-03 | Lam Research Corporation | Apparatus and system for cleaning a substrate |
| US8043441B2 (en) * | 2005-06-15 | 2011-10-25 | Lam Research Corporation | Method and apparatus for cleaning a substrate using non-Newtonian fluids |
| JP2005336342A (ja) * | 2004-05-27 | 2005-12-08 | Tosoh Corp | 洗浄用組成物 |
| US20080207005A1 (en) * | 2005-02-15 | 2008-08-28 | Freescale Semiconductor, Inc. | Wafer Cleaning After Via-Etching |
| TWI282363B (en) * | 2005-05-19 | 2007-06-11 | Epoch Material Co Ltd | Aqueous cleaning composition for semiconductor copper processing |
| KR101191402B1 (ko) * | 2005-07-25 | 2012-10-16 | 삼성디스플레이 주식회사 | 포토레지스트 스트리퍼 조성물, 이를 이용하는 배선 형성방법 및 박막 트랜지스터 기판의 제조 방법 |
| SG154438A1 (en) * | 2005-12-30 | 2009-08-28 | Lam Res Corp | Cleaning compound and method and system for using the cleaning compound |
| US20070179072A1 (en) * | 2006-01-30 | 2007-08-02 | Rao Madhukar B | Cleaning formulations |
| US20090045164A1 (en) * | 2006-02-03 | 2009-02-19 | Freescale Semiconductor, Inc. | "universal" barrier cmp slurry for use with low dielectric constant interlayer dielectrics |
| WO2007095973A1 (en) * | 2006-02-24 | 2007-08-30 | Freescale Semiconductor, Inc. | Integrated system for semiconductor substrate processing using liquid phase metal deposition |
| JP2008191631A (ja) * | 2006-08-21 | 2008-08-21 | Tosoh Corp | レジスト除去用組成物 |
| US7897213B2 (en) * | 2007-02-08 | 2011-03-01 | Lam Research Corporation | Methods for contained chemical surface treatment |
| US8084406B2 (en) | 2007-12-14 | 2011-12-27 | Lam Research Corporation | Apparatus for particle removal by single-phase and two-phase media |
| US20090270299A1 (en) * | 2008-04-23 | 2009-10-29 | Nissan Chemical Industries, Ltd. | Composition for removing protective layer in fabrication of MEMS and method for removing same |
| JP5321389B2 (ja) * | 2009-09-28 | 2013-10-23 | 東ソー株式会社 | レジスト剥離剤及びそれを用いた剥離方法 |
| JP2012255909A (ja) * | 2011-06-09 | 2012-12-27 | Tosoh Corp | レジスト剥離剤及びそれを用いた剥離方法 |
| JP2013011816A (ja) * | 2011-06-30 | 2013-01-17 | Tosoh Corp | レジスト剥離剤及びそれを用いた剥離方法 |
| WO2013122172A1 (ja) * | 2012-02-17 | 2013-08-22 | 三菱化学株式会社 | 半導体デバイス用洗浄液及び半導体デバイス用基板の洗浄方法 |
| JP2014141668A (ja) * | 2012-12-27 | 2014-08-07 | Sanyo Chem Ind Ltd | 電子材料用洗浄剤 |
| JP5575318B1 (ja) * | 2013-09-02 | 2014-08-20 | パナソニック株式会社 | レジスト剥離液 |
| KR102135187B1 (ko) * | 2013-12-26 | 2020-07-17 | 동우 화인켐 주식회사 | 포토레지스트 박리액 조성물 |
| WO2016142507A1 (en) * | 2015-03-12 | 2016-09-15 | AZ Electronic Materials (Luxembourg) S.à.r.l. | Compositions and methods that promote charge complexing copper protection during low pka driven polymer stripping |
| TWI725220B (zh) * | 2016-08-12 | 2021-04-21 | 美商因普利亞公司 | 減少邊緣珠區域中來自含金屬光阻劑之金屬殘留物的方法 |
| KR101906122B1 (ko) | 2018-07-09 | 2018-12-07 | 와이엠티 주식회사 | Ａｕ 범프 표면 세정 조성물 및 세정 방법 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US14534A (en) * | 1856-03-25 | Tool foe | ||
| US143495A (en) * | 1873-10-07 | Improvement in bayonet-sockets | ||
| US5279771A (en) * | 1990-11-05 | 1994-01-18 | Ekc Technology, Inc. | Stripping compositions comprising hydroxylamine and alkanolamine |
| JP3264405B2 (ja) | 1994-01-07 | 2002-03-11 | 三菱瓦斯化学株式会社 | 半導体装置洗浄剤および半導体装置の製造方法 |
| EP0789071B1 (en) * | 1995-07-27 | 2006-10-11 | Mitsubishi Chemical Corporation | Method for treating surface of substrate and surface treatment composition therefor |
| JPH09111224A (ja) | 1995-08-17 | 1997-04-28 | Mitsubishi Chem Corp | 表面処理組成物及びそれを用いた基体表面処理方法 |
| JP2911792B2 (ja) * | 1995-09-29 | 1999-06-23 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
| JP3236220B2 (ja) * | 1995-11-13 | 2001-12-10 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
| JP3755776B2 (ja) * | 1996-07-11 | 2006-03-15 | 東京応化工業株式会社 | リソグラフィー用リンス液組成物及びそれを用いた基板の処理方法 |
| US5968848A (en) * | 1996-12-27 | 1999-10-19 | Tokyo Ohka Kogyo Co., Ltd. | Process for treating a lithographic substrate and a rinse solution for the treatment |
| US6268323B1 (en) * | 1997-05-05 | 2001-07-31 | Arch Specialty Chemicals, Inc. | Non-corrosive stripping and cleaning composition |
| US6815151B2 (en) * | 1997-09-05 | 2004-11-09 | Tokyo Ohika Kogyo Co., Ltd. | Rinsing solution for lithography and method for processing substrate with the use of the same |
| US6121218A (en) * | 1997-11-12 | 2000-09-19 | Thompson; Andrew Michael | Priming composition for bonding photoresists on substrates |
| JP3757045B2 (ja) | 1997-12-10 | 2006-03-22 | 昭和電工株式会社 | サイドウォール除去液 |
| JPH11323394A (ja) * | 1998-05-14 | 1999-11-26 | Texas Instr Japan Ltd | 半導体素子製造用洗浄剤及びそれを用いた半導体素子の製造方法 |
| JP4224651B2 (ja) * | 1999-02-25 | 2009-02-18 | 三菱瓦斯化学株式会社 | レジスト剥離剤およびそれを用いた半導体素子の製造方法 |
| TWI270749B (en) * | 1999-06-07 | 2007-01-11 | Tokyo Ohka Kogyo Co Ltd | Photoresist stripping liquid composition and a method of stripping photoresists using the same |
| JP4134458B2 (ja) | 1999-06-23 | 2008-08-20 | Ｊｓｒ株式会社 | 半導体部品用洗浄剤、半導体部品の洗浄方法 |
| JP4202542B2 (ja) | 1999-08-05 | 2008-12-24 | 花王株式会社 | 剥離剤組成物 |
| TW593674B (en) * | 1999-09-14 | 2004-06-21 | Jsr Corp | Cleaning agent for semiconductor parts and method for cleaning semiconductor parts |
| JP2001183850A (ja) * | 1999-12-27 | 2001-07-06 | Sumitomo Chem Co Ltd | 剥離剤組成物 |
| JP3869608B2 (ja) * | 2000-01-25 | 2007-01-17 | Ｎｅｃエレクトロニクス株式会社 | 防食剤 |
| JP3339575B2 (ja) | 2000-01-25 | 2002-10-28 | 日本電気株式会社 | 剥離剤組成物および剥離方法 |
| JP2003100715A (ja) | 2001-09-20 | 2003-04-04 | Mitsubishi Gas Chem Co Inc | 半導体用洗浄剤 |
| JP3787085B2 (ja) | 2001-12-04 | 2006-06-21 | 関東化学株式会社 | フォトレジスト残渣除去液組成物 |
| AU2003225178A1 (en) * | 2002-04-24 | 2003-11-10 | Ekc Technology, Inc. | Oxalic acid as a cleaning product for aluminium, copper and dielectric surfaces |
-
2003
- 2003-10-30 US US10/695,773 patent/US6946396B2/en not_active Expired - Fee Related
-
2004
- 2004-10-27 WO PCT/JP2004/015935 patent/WO2005043610A1/ja active Application Filing
- 2004-10-27 CN CNB2004800317961A patent/CN100421222C/zh not_active Expired - Fee Related
- 2004-10-27 JP JP2005515137A patent/JPWO2005043610A1/ja not_active Withdrawn
- 2004-10-27 US US10/577,481 patent/US20070072782A1/en not_active Abandoned
- 2004-10-27 KR KR1020067007985A patent/KR20060096062A/ko not_active Application Discontinuation
- 2004-10-27 EP EP04793047A patent/EP1684337A4/en not_active Withdrawn
- 2004-10-29 TW TW093132990A patent/TW200524028A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US6946396B2 (en) | 2005-09-20 |
| WO2005043610A1 (ja) | 2005-05-12 |
| US20070072782A1 (en) | 2007-03-29 |
| EP1684337A4 (en) | 2007-02-14 |
| JPWO2005043610A1 (ja) | 2007-12-13 |
| US20050096237A1 (en) | 2005-05-05 |
| CN100421222C (zh) | 2008-09-24 |
| TW200524028A (en) | 2005-07-16 |
| KR20060096062A (ko) | 2006-09-05 |
| EP1684337A1 (en) | 2006-07-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1875464A (zh) | 含有不饱和二羧酸和亚乙基脲的半导体用洗涤液组合物和洗涤方法 | |
| CN1244719C (zh) | 含有1,3－二羰基化合物的半导体去膜组合物 | |
| CN1118003C (zh) | 光敏抗蚀剂清除剂组合物 | |
| CN1218222C (zh) | 用于清洁半导体设备上有机残余物和等离子蚀刻残余物的组合物 | |
| CN1643454A (zh) | 清洗半导体基板的ph缓冲组合物 | |
| CN1575331A (zh) | 清洗组合物 | |
| CN1575328A (zh) | 用于清洗半导体基质上无机残渣含有铜特效腐蚀抑制剂的含水清洗组合物 | |
| CN1555409A (zh) | 等离子体灰化后晶片的改进清洁剂 | |
| CN1420161A (zh) | 基片表面洗净液及洗净方法 | |
| CN1488740A (zh) | 清洁组合物 | |
| CN1426452A (zh) | 洗涤剂组合物 | |
| CN1733879A (zh) | 半导体基板洗涤液以及半导体基板的洗涤方法 | |
| CN101029288A (zh) | 用于除去杂质的清洗液组合物及除去杂质的方法 | |
| CN1690865A (zh) | 光致抗蚀剂剥离剂 | |
| CN1918698A (zh) | 半导体装置用基板的洗涤液及洗涤方法 | |
| CN1639846A (zh) | 半导体器件用基板的清洗液及清洗方法 | |
| CN1920671A (zh) | 光致抗蚀剂残渣、聚合物残渣除去组合物和残渣除去方法 | |
| CN1650235A (zh) | 光致抗蚀剂剥离方法 | |
| CN1706925A (zh) | 干蚀刻后的洗涤液组合物及半导体装置的制造方法 | |
| KR20080025697A (ko) | 구리를 부동태화하는 ｃｍｐ후 세정 조성물 및 이용 방법 | |
| CN1871333A (zh) | 用于高效清洁/抛光半导体晶片的组合物和方法 | |
| CN1849386A (zh) | 清洁组合物、清洁半导体基底的方法以及在半导体基底上形成配线的方法 | |
| CN1187689A (zh) | 清洗金属污染的晶片基片同时保持晶片的光滑性的方法 | |
| CN1256629C (zh) | 抗蚀剂和蚀刻副产品除去组合物及使用该组合物除去抗蚀剂的方法 | |
| CN100343361C (zh) | 含有铜缓蚀剂、用于清洗半导体衬底上的无机残余物的水性清洗组合物 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080924 Termination date: 20091127 |