CN1868615A

CN1868615A - Degumming technological method directed to low dielectric constant material

Info

Publication number: CN1868615A
Application number: CN 200610027857
Authority: CN
Inventors: 朱骏
Original assignee: Shanghai Integrated Circuit Research and Development Center Co Ltd
Current assignee: Shanghai IC R&D Center Co Ltd
Priority date: 2006-06-19
Filing date: 2006-06-19
Publication date: 2006-11-29
Anticipated expiration: 2026-06-19
Also published as: CN100560231C

Abstract

A degumming process for the material with low dielectric constant includes such steps as dry degumming based on strong reducing power of H2 and by using the mixture of inertial gas and halogen, wet chemical washing, and supercritical CO2 fluid washing.

Description

A kind of degumming technological method at advanced low-k materials

Affiliated technical field

The present invention relates to field of IC technique, particularly about a kind of degumming technological method at advanced low-k materials.

Background technology

During semiconductor is made, the importance of photoetching process is need not query, rely on sensitization, the development of photoresist, figure on the mask version is delivered in the photoresist of silicon chip surface accurately, etching subsequently, to inject then be that photoresist figure with silicon chip surface is delivered in the silicon chip, thereby realize the chip intended function.But well-known, photoresist is the organic photo macromolecular compound, and after satisfying process requirements, for avoiding organic pollution and prevent its negative effect to later process, photoresist must be removed fully.Produced thus the remove photoresist demand of technology of semiconductor lithography.

The technology of removing photoresist of semiconductor production is paced up and down always and is removed photoresist between the technology in wet method and dry method.The aluminium technology epoch are used wet processing, are replaced by dry process subsequently.Before about ten years, the photoresist that employing oxygen plasma dry technique is peeled off after etching or the ion implantation technology has just become the main flow of semiconductor industry.This technology is not only being peeled off a large amount of photoresists, and is removing some remaining wet methods that all replaced traditional dependence chemical reagent aspect organic technology of removing photoresist.But recent development along with copper interconnection technology, dielectric materials being widely used in industry, the technical staff faces new challenges again.Dielectric materials sensitivity very too much is exposed in the oxygen plasma environment or the too much use dry method technology of removing photoresist will cause the damage of material, and this is fatal to device.And along with development of technology, it is more and more littler that device just constantly becomes, and the gate electrode of 45 nm technology node narrows down to 25 nanometers after etching, and this makes control be become more and more important by the damage of plasma generation.Originally nowadays relative simple technology step in device is made all was required to realize zero silicon loss, and this is because some medium all toos that play function in device have approached, and even even is impatient at even lose one deck atom.Just because of these factors, engineers has to rely on traditional wet processing again.

Summary of the invention

The objective of the invention is to be implemented under the prerequisite that fully removes chemical organic compounds, reduce the loss of advanced low-k materials as much as possible, the protection backing material for solving above-mentioned prior art problem.

The invention provides a kind of degumming technological method at advanced low-k materials, rely on the strong reducing power of hydrogen, and use inert gas, halogen compound gas source to carry out dry method and remove photoresist, replace in the past the oxygen plasma dry method technology of removing photoresist, and cooperate wet-chemical cleaning operation and supercritical carbon dioxide liquid cleaning operation, realize the technology of removing photoresist at advanced low-k materials.

Wherein said dry method is removed photoresist, and its inert gas that mixes in the source of the gas can be helium, neon, argon, krypton or xenon, the single use of all gases; Halogen can be a fluorine or chlorine, and all gases can also can be used with in single use, and the ratio that fluorine, chlorine are used with is 1: 1,1: 2,1: 3,2: 1,3: 1,1: 4,4: 1 or X: Y (X-1～100, Y-1～100); The mixed proportion of hydrogen, inert gas and halogen is 1: 1: 2,1: 2: 1,1: 2:, 1: 3: 2,1: 2: 3,1: 1: 1 or X: Y: Z (X-1～100, Y-1～100, Z-1～100); Processing time is 50～500 seconds, and air pressure is 5～50 holders, and power is 100～500 watts, and temperature is 50～400 degree.

The raw material of wherein said wet-chemical cleaning operation and supercritical carbon dioxide liquid cleaning operation comprises ammoniacal liquor, hydrogen peroxide, deionized water and supercritical carbon dioxide; Wherein the proportioning of ammoniacal liquor, hydrogen peroxide, deionized water is 1: 1: 1,1: 1: 2,1: 1: 3,1: 1: 4,1: 1: 5,1: 2: 2,1: 2: 3,1: 2: 4 or X: Y: Z (X-1～100, Y-1～100, Z-1～100), the serviceability temperature of ammoniacal liquor, hydrogen peroxide, deionized water mixing material is 5～50 degree, consumption is 100ml, 200ml, 250ml, 300ml, 400ml or 500ml, and scavenging period is 5～100 seconds; The use amount of supercritical carbon dioxide liquid is 10ml, 20ml, 25ml, 30ml, 40ml or 50ml, and scavenging period is 5～100 seconds.

Owing to adopt degumming technological method of the present invention, fully guaranteed to reduce the loss of advanced low-k materials as much as possible removing under the prerequisite of chemical organic compounds, protected backing material.

The specific embodiment

The invention relates to a kind of degumming technological method at advanced low-k materials.One embodiment of the present of invention comprise: at first, use hydrogen, inert gas, halogen compound gas source the silicon chip that has photoresist to be carried out dry method remove photoresist; Described inert gas can be a helium, and described halogen is that fluorine and chlorine are used with, and the ratio that fluorine, chlorine are used with is 1: 1,1: 2,1: 3,2: 1,3: 1,1: 4 or 4: 1; The mixed proportion of hydrogen, inert gas and halogen is 1: 1: 2,1: 2: 1,1: 2:, 1: 3: 2,1: 2: 3 or 1: 1: 1.Described dry process, the processing time is 50～500 seconds, and air pressure is 5～50 holders, and power is 100～500 watts, and temperature is 50～400 degree.Then, use ammoniacal liquor, hydrogen peroxide, deionized water to carry out the wet method processing of removing photoresist; The proportioning of ammoniacal liquor, hydrogen peroxide, deionized water is 1: 1: 1,1: 1: 2,1: 1: 3,1: 1: 4,1: 1: 5,1: 2: 2,1: 2: 3 or 1: 2: 4 in the described wet processing, and the serviceability temperature of ammoniacal liquor, hydrogen peroxide, deionized water mixing material is that 5～50 degree, consumption are that 100ml, 200ml, 250ml, 300ml, 400ml or 500ml, scavenging period are 5～100 seconds.Then, use the supercritical carbon dioxide cleaning treatment of removing photoresist; The use amount of described supercritical carbon dioxide liquid is 10ml, 20ml, 25ml, 30ml, 40ml or 50ml, and scavenging period is 5～100 seconds.At last, use the washed with de-ionized water silicon chip, finish the operation of removing photoresist.

That more than introduces only is based on a preferred embodiment of the present invention, can not limit scope of the present invention with this.Any device of the present invention is done replacement, the combination, discrete of parts well know in the art, and the invention process step is done well know in the art being equal to change or replace and all do not exceed exposure of the present invention and protection domain.

Claims

1, a kind of degumming technological method at advanced low-k materials is characterized in that may further comprise the steps:

(1) use hydrogen, inert gas, halogen compound gas source the silicon chip that has photoresist to be carried out dry method remove photoresist;

(2) use ammoniacal liquor, hydrogen peroxide, deionized water to carry out the wet-chemical cleaning operation;

(3) use the supercritical carbon dioxide cleaning operation that removes photoresist;

(4) use the washed with de-ionized water silicon chip, finish the technology of removing photoresist.

2, degumming technological method as claimed in claim 1 is characterized in that the inert gas in the described mixing source of the gas can be helium, neon, argon, krypton or xenon, the single use of all gases; Halogen can be a fluorine or chlorine, and all gases can also can be used with in single use, and the ratio that fluorine, chlorine are used with is 1: 1,1: 2,1: 3,2: 1,3: 1,1: 4,4: 1 or X: Y (X-1～100, Y-1～100); The mixed proportion of hydrogen, inert gas and halogen is 1: 1: 2,1: 2: 1,1: 2:, 1: 3: 2,1: 2: 3,1: 1: 1 or X: Y: Z (X-1～100, Y-1～100, Z-1～100).

3, degumming technological method as claimed in claim 1 is characterized in that the processing time that described dry method is removed photoresist is 50～500 seconds, and air pressure is 5～50 holders, and power is 100～500 watts, and temperature is 50～400 degree.

4, degumming technological method as claimed in claim 1 is characterized in that the raw material of described wet-chemical cleaning operation and supercritical carbon dioxide liquid cleaning operation comprises ammoniacal liquor, hydrogen peroxide, deionized water and supercritical carbon dioxide; Wherein the proportioning of ammoniacal liquor, hydrogen peroxide, deionized water is 1: 1: 1,1: 1: 2,1: 1: 3,1: 1: 4,1: 1: 5,1: 2: 2,1: 2: 3,1: 2: 4 or X: Y: Z (X-1～100, Y-1～100, Z-1～100), the serviceability temperature of ammoniacal liquor, hydrogen peroxide, deionized water mixing material is 5～50 degree, consumption is 100ml, 200ml, 250ml, 300ml, 400ml or 500ml, and scavenging period is 5～100 seconds; The use amount of supercritical carbon dioxide liquid is 10ml, 20ml, 25ml, 30ml, 40ml or 50ml, and scavenging period is 5～100 seconds.