CN1866556A - Light type power led - Google Patents
Light type power led Download PDFInfo
- Publication number
- CN1866556A CN1866556A CN 200510097443 CN200510097443A CN1866556A CN 1866556 A CN1866556 A CN 1866556A CN 200510097443 CN200510097443 CN 200510097443 CN 200510097443 A CN200510097443 A CN 200510097443A CN 1866556 A CN1866556 A CN 1866556A
- Authority
- CN
- China
- Prior art keywords
- power led
- led
- power
- light type
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- Led Device Packages (AREA)
Abstract
The lamp-form power LED comprises: an electrode a on side to supply power, a power chip on middle of the LED connected to a and an electrode B on another side of LED to supply power. This invention has high brightness and low consumption.
Description
Technical field
The present invention relates to a kind of power led (LED), and more specifically, relate to a kind of light type power LED, one of them power chip is installed on the LED of a lamp form.
Background technology
Usually, light-emitting diode (LED) is by utilizing semi-conductive p-n junction structure to produce and the minority carrier (as electronics or hole) that injects of recombinating comes luminous.Semiconductor light-emitting elements is divided into LED and laser diode (LD) simply.Because LED and LD are transmitted in the interior light of narrow wavelength band of an expectation from the beginning, thereby compare with existing incandescent lamp, it has high efficient, and existing incandescent lamp utilizes black body radiation to produce the light of wide spectrum, and utilizes the colour filter of expectation to filter the light that is produced.
LED or LD can be by the power drives of 50mW-100mW, and have very low power consumption.But LED or LD also have defective, because its small size and low luminous efficiency have limited its use as illumination component.
Fig. 1 is the plane graph of interpretation routine lamp type LED.
With reference to figure 1, electrode A 1 is positioned at the left side of a lead frame, and chip 2 is installed on this lead frame.Electrode B 3 is positioned at the right side of described lead frame.
Above-mentioned electrode is connected to described chip by two leads.
That is to say that electrode A 1 is connected to chip 2 by a lead, and electrode B 3 is connected to this chip 2 by another lead.
The process of making above-mentioned LED roughly comprises preliminary treatment as described below, reprocessing and test processes:
1) preliminary treatment
Preliminary treatment is the processing of a LED being installed on lead frame and connecting the polarity of an element.
2) reprocessing
Reprocessing is the processing that a cap is set on semi-finished product.
3) test processes
Test processes is the processing of the electrical characteristics and the external presentation of test product.
As mentioned above, the optical efficiency of power LED has obtained replenishing, and just is used to illumination from 2004.Recently, increasing company adopts power bag (power packet).
There are a variety of power to wrap in now and are used, comprise PCB type and horizontal power bag.But the power bag has defective, because power LED that provides on PCB is provided for it, its size increases.Also have, because its size is 20mil, 28mil or 40mil, and its power consumption height, for example in the scope of 500mW to 1W, thereby produce a large amount of heat.
Summary of the invention
Therefore, be the present invention, and an object of the present invention is the LED that a power chip provides a kind of high brightness and low-power consumption to be installed by wrapping at a lamp type with the solution the above-mentioned problems in the prior art.
In order to realize this purpose, the invention provides a kind of light type power LED, wherein, a power chip is installed on the lamp type LED, and this lamp type LED comprises: electrode A, be positioned at a side of this power LED, be used for providing power supply to this power LED; A power chip is connected to described electrode A by two leads, and is installed on the lead frame that is positioned at described power LED core; And electrode B, be positioned at another survey of described power LED, and be connected to described power chip by two leads, be used for providing power supply to described power LED.
The size of described power LED can be greater than 5mm.
The size of described power chip can be greater than 20mil.
A Zener diode can be installed on the described power LED to prevent static.
Described lead frame can be made of copper, so that discharge the heat of described power LED.
Description of drawings
By below in conjunction with the accompanying drawing detailed description of the present invention, above-mentioned and other purposes of the present invention, feature and advantage will be more clear.Wherein:
Fig. 1 is the plane graph of interpretation routine lamp type LED;
Fig. 2 explains the end view of light type power LED according to an embodiment of the invention;
Fig. 3 explains the plane graph of light type power LED according to an embodiment of the invention;
Fig. 4 explains the plane graph of light type power LED in accordance with another embodiment of the present invention.
Embodiment
The preferred embodiments of the present invention are described below with reference to the accompanying drawings.The content that defines in the specification, none other than as detailed construction and element, but be used to assist those of ordinary skill in the art's complete understanding detail of the present invention, thereby the invention is not restricted to these contents.
Fig. 2 explains the end view of light type power LED according to an embodiment of the invention.
With reference to the accompanying drawings 2, be lamp type LED according to the form of power LED of the present invention.
Usually, a power LED chip is installed on a PCB or the horizontal lead frame, and this makes the size of power LED increase, thereby power consumption is bigger.But according to the present invention, the power LED chip is installed on lamp type (the being vertical-type) LED, thereby compares with conventional power LED, and the brightness of light type power LED is higher.
In addition, when molded power LED, adopt epoxy and silicon materials to improve heat-inhibition effect, thereby in particular bound, do not need radiator.
In addition, aspect heat radiation, be made of copper lead frame and replace radiator.
Fig. 3 explains the plane graph of light type power LED according to an embodiment of the invention.
With reference to figure 3, electrode A 31 is positioned at the left side of power LED, is being positioned at installation power chip 32 on the lead frame at this power LED center.Electrode B 33 is positioned at the right side of lead frame, and is connected to described power chip.
In this embodiment of the present invention, described electrode is connected to described power chip by some leads.
That is, electrode A 31 is connected to power chip 32 by two leads, and electrode B 33 is connected to this power chip by two leads.
Different with conventional lamp type LED, according to power chip of the present invention 32 greater than 20mil, thereby make this power LED brightness height, durability good.
Fig. 4 explains the plane graph of light type power LED in accordance with another embodiment of the present invention.
With reference to figure 4, electrode A 41 is positioned at the left side of power LED, and is being positioned at installation power chip 42 on the lead frame at this power LED center.Electrode B 43 is positioned at the right side of lead frame, and is connected to described power chip.
In this embodiment of the present invention, described electrode is connected to described power chip by some leads.
Particularly, described power LED has the lead that thickness is 30 μ m, to deal with the input current of increase.
In addition, Zener diode 44 is installed, to prevent static in electrode B 43.
Different with conventional LED, luminous power according to the present invention is in the scope between the 500mW to 5W.
Power LED of the present invention has solved the defective of LED/PCB power LED, and has high optical efficiency.In addition, the heat that produces in this power LED discharges by the lead frame that is made of copper.
Because power LED of the present invention is embodied as LED bag state, has avoided existing P CB power bag LED, thereby can utilizes existing automated manufacturing system to make and need not any change, thereby compare, have stronger competitiveness with existing P CB power LED.In addition, also can obtain multiple power bag, for example existing LED, and its size can be greater than 20mil.
As mentioned above, according to the present invention, can be by wrap the light type power LED that the installation power chip provides a kind of high brightness and low-power consumption in the lamp type.In addition, because lamp type LED does not adopt PCB, thereby Miniaturizable, and can be made into multiple bag.Therefore, can be easy to enter existing incandescent lamp, fluorescent lamp and neon light market.
Although abovely described the preferred embodiments of the present invention for illustrative purposes, but those of ordinary skill in the art is to be understood that, under the prerequisite that does not deviate from the disclosed the scope and spirit of the present invention of claims, can carry out various modifications, interpolation and replacement.
Claims (9)
1. a light type power led LED wherein installs a power chip on a lamp type LED, and this light type power LED comprises:
Electrode A is positioned at a side of described power LED, is used for providing power supply to described power LED;
Power chip is connected to described electrode A by two leads, and is installed on the lead frame that is positioned at described power LED core; And
Electrode B is positioned at the opposite side of described power LED, and is connected to described power chip by two leads, is used for providing power supply to described power LED.
2. light type power LED as claimed in claim 1, the size of wherein said power LED is greater than 5mm.
3. light type power LED as claimed in claim 1, the size of wherein said power chip is greater than 20mil.
4. light type power LED as claimed in claim 1 wherein installs a Zener diode, to prevent static on described power LED.
5. light type power LED as claimed in claim 1, wherein said lead frame is made of copper, to discharge the heat of described power LED.
6. light type power LED as claimed in claim 1, wherein said power LED has a plurality of leads, is used for described electrode is connected to described power chip.
7. light type power LED as claimed in claim 1, wherein said power LED forms with silicon is molded, to improve heat-inhibition effect.
8. light type power LED as claimed in claim 1, wherein when the magnitude of current of the described power LED of input increases, the thickness that is used to connect the lead of described electrode is set to about 30 μ m.
9. light type power LED as claimed in claim 1, wherein said power LED is a vertical-type.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050041976 | 2005-05-19 | ||
| KR1020050041976A KR100698477B1 (en) | 2005-05-19 | 2005-05-19 | Lamp type power LED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1866556A true CN1866556A (en) | 2006-11-22 |
Family
ID=37425509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510097443 Pending CN1866556A (en) | 2005-05-19 | 2005-12-28 | Light type power led |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR100698477B1 (en) |
| CN (1) | CN1866556A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105938866A (en) * | 2016-06-13 | 2016-09-14 | 开发晶照明（厦门）有限公司 | LED bracket and LED package structure |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3618989B2 (en) * | 1997-12-24 | 2005-02-09 | 株式会社東芝 | Semiconductor laser device |
| KR200260167Y1 (en) * | 2001-10-24 | 2002-01-10 | (주)옵토니카 | Light emitting device for comprising voltage regulator device |
| JP4110222B2 (en) * | 2003-08-20 | 2008-07-02 | 住友電気工業株式会社 | Light emitting diode |
| KR100555174B1 (en) * | 2003-09-29 | 2006-03-03 | 바이오닉스(주) | Manufacturing method and product of high power type led |
-
2005
- 2005-05-19 KR KR1020050041976A patent/KR100698477B1/en active IP Right Grant
- 2005-12-28 CN CN 200510097443 patent/CN1866556A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105938866A (en) * | 2016-06-13 | 2016-09-14 | 开发晶照明（厦门）有限公司 | LED bracket and LED package structure |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20060119266A (en) | 2006-11-24 |
| KR100698477B1 (en) | 2007-03-26 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |