CN1835257A - 发光器件 - Google Patents

发光器件 Download PDF

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CN1835257A
CN1835257A CNA2006100657080A CN200610065708A CN1835257A CN 1835257 A CN1835257 A CN 1835257A CN A2006100657080 A CNA2006100657080 A CN A2006100657080A CN 200610065708 A CN200610065708 A CN 200610065708A CN 1835257 A CN1835257 A CN 1835257A
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led chip
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sealing resin
optical multilayer
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CN100474645C (zh
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上野一彦
小谷泰司
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Stanley Electric Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
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    • H01ELECTRIC ELEMENTS
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    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46Reflective coating, e.g. dielectric Bragg reflector
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01ELECTRIC ELEMENTS
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Abstract

一种发光器件。在将现有的蓝色LED芯片和黄色发光荧光体组合得到白色LED灯的方法中,来自LED的光根据与荧光体的碰撞次数,黄色感变强,所以越是距离LED芯片远的周边部越变为黄色感强的光,产生颜色不匀的问题。根据本发明,提供以下发光器件来解决课题:用混和了黄色发光荧光体3的填充树脂形成的密封树脂4覆盖蓝色LED芯片的周边,利用来自蓝色LED芯片的光和来自黄色发光荧光体的光的混合色获得白色发光,在这种发光器件1中,密封树脂的发光面相对于通过蓝色LED芯片的中心的垂直线Z轴对称,在发光面上设置有高折射率膜和低折射率膜层叠而成的光学多层膜。

Description

发光器件
技术领域
本发明涉及LED灯,尤其涉及具有如下结构的发光器件:将例如发蓝色光的LED芯片和例如发黄色光的荧光体组合起来,利用来自LED芯片的光激励上述荧光体,使来自LED芯片的光和来自荧光体的光混色,得到白色或中间色。
背景技术
图5表示将现有的蓝色发光的LED芯片91和黄色发光的荧光体92组合起来,模拟地得到白色发光的LED灯90时的结构的例子,在由印刷电路基板形成的元件基板93上,通过刻蚀等适当的方法形成正极和负极2极的电路93a,上述LED芯片91被芯片焊接在其中一个极上。
而且,在上述LED芯片91的另一极上用金线94进行配线,成为可向上述LED芯片91供电的状态。另外,在上述LED芯片91上,利用环氧树脂等的透明密封树脂95进行模塑而形成外壳96,该外壳96兼备保护该LED芯片91不受湿度等影响、和保护上述金线94不因机械性接触等而发生断线的功能。
这里,特别地,在白色发光LED灯90的情况下,因为LED芯片91发出的光是蓝色,所以预先将由上述LED芯片91发出的光激励、进行黄色发光的荧光体96适量混合到上述透明树脂95中,当从外壳96向外部发出光时,相互为补色关系的蓝色和黄色被混合,看到白色光。
专利文献1日本特开2002-076444号公报
但是,在上述现有的结构的白色发光LED灯90中,也如从图5可知的那样,因为根据观察该LED灯90的方向,从上述LED芯片91射出的光在到达观察者之前的外壳96内的距离产生差别,所以根据观察方向,蓝色光和上述荧光体92的碰撞次数不同。
结果,如果从密封树脂95内的透过距离长的角度观察,则光的黄色感变强,如果从透过距离短的角度观察,则蓝色变强。即,产生如下的问题:根据观察方向的不同,产生颜色改变而被感知的情况,或者,根据形状不同,即使在从一个方向观察的情况下也感到颜色不均等,该问题的解决成为课题。
发明内容
本发明通过提供一种发光器件作为不产生颜色不均的器件,来解决课题,该发光器件的特征在于,包括:可视LED芯片;树脂,其密封所述可视LED芯片,包含有被来自所述可视LED芯片的光激励的荧光体;以及光学多层膜,光学多层膜,其以预定的比例反射来自所述可视LED芯片的光,而且,透过波长比来自所述可视LED芯片的光长的光,反射波长比来自所述可视LED芯片的光短的光,其中,所述光学多层膜被配置于所述树脂的出光面上。
本发明的光学多层膜对于LED芯片发出的可视光具有预定的反射率,而且,具有如下性质:透过波长比来自可视光LED芯片的光长的光,反射波长比来自可视光LED芯片的光短的光。在光相对于光学多层膜的入射角大的情况下,该反射特性向短波长侧偏移。
结果,对于以垂直的角度向光学多层膜入射的、源自LED芯片的光的强度大于源自荧光体的光的强度的混合色,仅对源自LED芯片的光以预定比例进行反射,对于以大的入射角向光学多层膜入射的、源自荧光体的光比源自LED芯片的光强的混合色,使双方的光均透过,可抵销因观察角度引起的发光颜色的不同。
附图说明
图1是表示本发明的发光器件的实施方式的剖面图。
图2同样是放大表示本发明的发光器件1的主要部分的说明图。
图3同样是表示本发明的光学多层膜的结构的说明图。
图4是表示上述光学多层膜的光直角透过时和倾斜透过时的波长特性差异的图表。
图5是表示现有例的剖面图。
标号说明
1发光器件;2蓝色LED芯片;3黄色发光荧光体;4密封树脂;5元件基板;5a凹部;6金线;7光学多层膜;7a透明基板。
具体实施方式
下面,基于图中所示的实施方式详细说明本发明。在图1中,用标号1表示的是本发明的发光器件,该发光器件1也采用蓝色LED芯片作为光源,利用在该蓝色LED芯片的周边填充(模塑)透明环氧树脂作为防湿用而形成的密封树脂4中混合的黄色发光荧光体3,得到白色发光,这点和现有例是相同的。
【实施例1】
另外,在这里,为了简化说明以容易理解,在该实施方式1中,作为如下的形状而进行说明:在元件基板5上,设置有例如大致为钵形的凹部5a,在该凹部5a的底面上安装(die mount)了蓝色LED芯片,在利用金线6进行了配线后,填充上述透明环氧树脂,直至元件基板5的大致上表面,作为密封树脂4,但本发明不限定于该形状。
而且,如上所述,在形成上述密封树脂4的透明环氧树脂中,预先均匀地混合有黄色发光荧光体3。图2是详细示出在上述凹部5a内形成的密封树脂4的部分的图,可明确地理解,由于上述密封树脂4为上述的结构,来自上述蓝色LED芯片2的向各个方向放射的光透过上述密封树脂4的各部分而出射到外部为止的距离产生差异。
而且,平均地来说,越是从蓝色LED芯片2以相对于光轴Z倾斜的角度射出的光,与黄色发光荧光体3碰撞的机会越多,成为偏黄色的白光,相反,从蓝色LED芯片2以靠近光轴的角度射出的光与上述荧光体的碰撞机会少,所以成为偏蓝色的白光,根据观察方向的不同,给与观察者不同的发光颜色。
本发明是以避免上述的现象为目的而进行的,在上述密封树脂4的上表面,设置光学多层膜7使其覆盖上述密封树脂4的向外部射出光的面、使第1层侧为密封树脂4侧,所述光学多层膜7如图3所示,由高折射率的部件、例如TiO2(折射率=2.40)形成的薄膜、和低折射率的部件、例如SiO2(折射率=1.47)形成的薄膜层叠而成。
并且,在现实中,很难在混合了黄色发光荧光体3等、难以保证平面性的密封树脂4的表面上高精度地进行100nm左右的极薄的膜厚的成膜,所以,如图1所示,预先在玻璃等保证了平面性的透明基板7a上形成光学多层膜7,将其设置在元件基板5的凹部5a的上方等预定的位置上。
之后,也可利用形成密封树脂4用的、添加有黄色发光荧光体3的树脂的传递成型(transfer molding)等方法,对上述凹部5a进行填充,通过进行与密封树脂4、元件基板5的一体化等的适当方法来进行安装。另外,在图1、图2中,为了明确光学多层膜7的存在,将光学多层膜7作为具有厚度的膜进行了记载,而在现实中是仅为100nm×12层左右。
在没有光学多层膜7的情况下,在观察上述密封树脂4的出光面时,成为如下的状态:以通过LED芯片2的中心、垂直于出光面的光轴Z为中心,以同心圆形状,顺序地从蓝色感强的白光变化为黄色感强的白光。因此,通过在出光面上采用蓝色光的透过率随着距上述光轴Z的距离而增大的结构,可实现在上述密封树脂4的向外部放出光的面上不发生颜色不均。
在本发明中,设置了用于此目的的光学多层膜7。即,利用在高折射率部件和低折射率部件的薄膜层叠而成的长波长透过滤波器中、随着透过的光的入射角相对于滤波器从垂直到倾斜、截止波长向短波长侧移动(即,透过的波长向短波长侧移动)的性质,对两者进行组合。
具体地,假定上述光学多层膜7将中心波长设定为偏蓝色的紫色,调整一部分的膜厚等,如图4中标号为R的曲线所示,在蓝色侧(长波长侧)的反射率有倾斜。这样,从上述蓝色LED芯片发出的光越倾斜,如图4中标号为S的曲线(虚线)所示,上述光学多层膜7的反射特性越向短波长侧移动,所以,蓝色的透过量增加,能防止如上所述越是来自密封树脂4的外周部分的光则黄色感越强的现象。
这里,再次参照图2,说明用光学多层膜7覆盖上述密封树脂4的光出射侧的作用,在如上所述来自蓝色LED的光和黄色发光荧光体3碰撞的概率低的正面(0°)方向上,如图中曲线B所示,约65%左右的蓝色光被反射到上述密封树脂4的方向,防止从正面看时的蓝色变强,倾斜地通过光学多层膜7。即,随着与黄色发光荧光体3的碰撞概率变高,反射率下降,获得蓝色和黄色的平衡。再有,图中标号Y所示的曲线是上述光学多层膜7对于黄色光的反射率。
以上,是本发明的工作原理,而在实际实施时,例如根据在密封树脂4内混和的黄色发光荧光体3的量,从蓝色感强的状态向黄色感强的状态转移的距离发生变化。或者,如果覆盖蓝色LED芯片2的密封树脂4的厚度不同,则即使是距上述光轴Z相同距离的位置,也发生透过上述光学多层膜7时的角度不同等状况的差异,因此,考虑这些情况,来决定上述光学多层膜7的中心波长、上述黄色发光荧光体3的添加量、上述密封树脂4的厚度等。
因此,根据本发明,得到不管从正面、斜方向等哪个方向看,都可看到相同白色的发光器件1,不会如现有例那样,若从斜方向看则感到黄色感强,不会使观察者产生不协调的感觉,提高了作为发光器件1的品质。
再有,在发明人为了完成本发明而进行的试制、研究的过程中,已经确认了如下的情况:通过采用覆盖上述密封树脂4而设置光学多层膜7的结构,特别在距蓝色LED芯片的距离近的中心部,过量的蓝色光被上述光学多层膜7反射到密封树脂4内,再度与上述黄色发光荧光体3接触,转换为黄色光。
因此,混和到上述密封树脂4中的黄色发光荧光体3的量也可以比现有例的量少,由此,能够防止完成的发光器件1成为如下的发光器件1:因为在形成密封树脂4的树脂中过量混入异物(荧光体)而变脆,容易产生破碎、裂纹等。
同样,因为混和到密封树脂4中的荧光体的量变少,所以密封树脂4对元件基板5的凹部5a的粘合性提高,很难发生两者的边界面上的剥离等,气密性提高,寿命的提高也是可期待的。
同时,已明确了:由于混合少量的荧光体即可,由此,形成密封树脂4时的树脂注入时的粘度变低,在注入时不会产生气泡,或者,在注入时不会发生金线6的断线,可得到提高良品率的二次效果。
再有,如由本发明的宗旨所明确的那样,本发明应用的范围不限于实施例中的在蓝色LED中组合了黄色荧光体的白色LED。只要是利用可视LED或者紫外LED来激励荧光体、产生白色或中间色的荧光体LED,同样可以应用。

Claims (3)

1.一种发光器件,其特征在于,包括:
可视LED芯片;
树脂,其密封所述可视LED芯片,并含有被来自所述可视LED芯片的光激励的荧光体;以及
光学多层膜,其以预定的比例反射来自所述可视LED芯片的光,而且,使波长比来自所述可视LED芯片的光长的光透射,而对波长比来自所述可视LED芯片的光短的光进行反射,
所述光学多层膜被配置于所述树脂的出光面上。
2.根据权利要求1所述的发光器件,其特征在于,所述可视LED芯片被芯片焊接在具有凹部的壳体的底面上,所述树脂被注入到所述凹部中,所述光学多层膜被配置在所述凹部的开口部。
3.根据权利要求1或2所述的发光器件,其特征在于,所述光学多层膜是成膜于透明基板上的、TiO2、Nb2O5或Ta2O5中的任意一种与SiO2的层叠膜。
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