CN1822365A - Light emitting device provided with lens for controlling light distribution characteristic - Google Patents

Light emitting device provided with lens for controlling light distribution characteristic Download PDF

Info

Publication number
CN1822365A
CN1822365A CNA2006100041539A CN200610004153A CN1822365A CN 1822365 A CN1822365 A CN 1822365A CN A2006100041539 A CNA2006100041539 A CN A2006100041539A CN 200610004153 A CN200610004153 A CN 200610004153A CN 1822365 A CN1822365 A CN 1822365A
Authority
CN
China
Prior art keywords
light
mentioned
fluorophor
resin layer
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2006100041539A
Other languages
Chinese (zh)
Other versions
CN100481447C (en
Inventor
三木伦英
泷根研二
山下良平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Publication of CN1822365A publication Critical patent/CN1822365A/en
Application granted granted Critical
Publication of CN100481447C publication Critical patent/CN100481447C/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

The light emitting device comprises a substrate (2), a positive electrode (6) and a negative electrode (4) formed on the substrate (2), a light emitting diode (8) connected to the positive electrode (6) and the negative electrode (4), the transparent resin (12 and 14) that covers the light emitting diode (8), a fluorescent material (16) that absorbs at least part of light emitted by the light emitting diode (8) and converts it to light of longer wavelength, and the lens that changes the direction of light emission from the light emitting diode (8) and/or the fluorescent material (16). The resin (12 and 14) includes the fluorescent material (16) and is formed so as to constitute the lens of substantially semi-cylindrical shape, and the fluorescent material (16) included in the resin (12 and 14) is distributed with a higher concentration in a region near the surface of the light emitting diode (8) than in a region near the surface of the portion that constitutes the lens.

Description

Has the light-emitting device that is used to control the light distribution characteristic lens
Technical field
The present invention relates to a kind of light-emitting device, can send the light of multiple color, relate in particular to a kind of light-emitting device that is used to control the light distribution characteristic lens that has by the combination of light-emitting diode and fluorophor.
Background technology
In recent years, develop after the blue LED that adopts nitride-based semiconductor, by this light-emitting diode with absorb from a part of light of this light-emitting diode output and the combination of exporting the fluorophor of different wavelengths of light, can make light-emitting device with multiple illuminant colour.If especially light-emitting diode is a blue LED, and fluorophor absorbs a part of light of blue LED and is converted to the complementary color of blue light, just can obtain sending the light-emitting diode of white light.
These light-emitting devices have various ways such as bullet cut and surface assembling type.
The situation of bullet cut generally forms cup at the front end that just reaches negative conductance electrode one side, assembles light-emitting diode in its cup, and fills the resin that scatters fluorophor.And, form and cover its bullet cut casting resin (Japanese kokai publication hei 7-99345 communique etc.) of whole lenticular front end on every side.
Also have, surface assembling type is provided with the concavity incorporating section forming on the substrate that is just reaching negative electrode, assembles light-emitting diode in its incorporating section, and fills the resin (TOHKEMY 2002-319711 communique) that scatters fluorophor.
When especially sending white light by the combination of blue LED and fluorophor, the tone of white depends on the balance of the luminous intensity of the luminous intensity of blue LED and fluorophor.Yet, spread to the fluorophor in the resin in the light-emitting device, be difficult to be controlled to be a certain amount of, and because of the inhomogeneous problem that also becomes of the inhomogeneous tone that produces between the fluorescence scale of construction.For this reason, in the TOHKEMY 2001-177158 communique, disclose the resin bed that comprises fluorophor by grinding and adjusted amount, the uneven technology of revisal tone of fluorophor, and in TOHKEMY 2004-186488 communique, disclose by adjusting the resin layer thickness that does not comprise the fluorophor part and come the uneven technology of revisal tone.
The aberration problem of different tones appears producing with direction of observation in the light-emitting device of this illuminated in combination diode and fluorophor and so on through regular meeting.This aberration be because of along direction of observation from the light of light-emitting diode by on the path, exist due to the different fluorescence scale of constructions.Therefore, be the aberration that suppresses to produce, be preferably in the adjacent distributions fluorophor of light-emitting diode with direction of observation.For this reason, always taked to surround around the light-emitting diode with the concavity cup, only in its glass, fill after the resin that scatters fluorophor, the potting resin floor that is shaped with lenticular covers whole method (Japanese kokai publication hei 10-242513 communique etc.), and after only splashing into the resin that scatters fluorophor and make it sclerosis around light-emitting diode, the potting resin floor that is shaped with lenticular covers whole method (TOHKEMY 2000-315824 communique etc.).
In addition, adopt the light-emitting device of light-emitting diode,, control the light distribution characteristic of light-emitting device with this by on the transparent enclosure resin bed, forming lens.To on printing opacity potting resin layer, form lens, can adopt following method.
(1) with the ester moulding method potting resin layer is configured as lenticular.
(2) with behind the tabular formation potting resin layer, being shaped through machining is lenticular.
(3) lens that other has been shaped stick on the potting resin laminar surface.
(4) method of employing casting mould.
Wherein, form lentiform method behind the ester moulding potting resin layer, since simple and easy and be better than producing in batches, so be used widely.As the method for ester moulding, the general transfer moudling (transfer molded) (as TOHKEMY 2000-196000 communique, TOHKEMY 2001-352105 communique) that is widely used in the semiconductor die package resin bed that adopts.
In recent years, particularly in a kind of side-looking pattern light-emitting device of surface assembling type, pursued more slim light-emitting device.So-called side-looking pattern is meant slim and luminous from the side light-emitting device.The side-looking pattern is the lateral emitting from the fitting surface adjacency mostly.In addition, the light-emitting device of surface assembling type, the resin bed that pursuit will constitute light-emitting area is processed into the lens with excellent fit light characteristic., existing surface assembled luminescent device if form lens on light-emitting area, light-emitting device maximization, the complicated problem of manufacturing process will occur.And, as the record in the communiques such as TOHKEMY 2001-177158 communique and TOHKEMY 2004-186488 number, if come the inhomogeneous of revisal tone with grinding the resin bed that constitutes light-emitting area, will produce the lens distortion that is formed at light-emitting area, change the problem of light distribution characteristic.
Summary of the invention
Light-emitting device of the present invention is the light-emitting device that forms lens on the resin bed of light-emitting area constituting, and that its purpose is to provide is slim, light distribution characteristic is good and light-emitting device that make easily.
Light-emitting device based on first side of the present invention, be have substrate, be formed at positive electrode and negative electrode on the aforesaid substrate, be connected light-emitting diode on above-mentioned positive electrode and the negative electrode, cover the hyaline layer of above-mentioned light-emitting diode, absorb at least from a part of light of above-mentioned light-emitting diode and be converted to long wavelength light fluorophor, change light-emitting component from the lens of the luminous intensity distribution direction of the light of above-mentioned light-emitting diode and/or the above-mentioned fluorophor of person, wherein:
Above-mentioned resin bed contains above-mentioned fluorophor, and is configured as formation and roughly is half-terete lens;
Fluorophor in the above-mentioned resin bed is compared the surface vicinity that is distributed in above-mentioned light-emitting diode more to high-density with the surface vicinity that forms the said lens part.
Based on the light-emitting device of second side of the present invention, it is for having the two layers of resin layer at least.Promptly, have substrate, be formed at just reaching negative electrode, be connected the above-mentioned hyaline layer that is just reaching light-emitting diode on the negative electrode, covering above-mentioned light-emitting diode, be dispersed in the fluorophor in the above-mentioned hyaline layer on the aforesaid substrate, and can carry out excitation luminescence to the fluorophor that is dispersed in the above-mentioned hyaline layer by the ejaculation light of above-mentioned light-emitting diode, thereby launch and light-emitting device from the light different colours light of above-mentioned light-emitting diode, wherein:
Above-mentioned hyaline layer covers above-mentioned light-emitting diode, and has first hyaline layer that contains above-mentioned fluorophor and second hyaline layer that is formed on above-mentioned first hyaline layer;
Above-mentioned second hyaline layer is processed into and makes the curved surface shape that forms lens above it;
In the mutual opposed one group of side of above-mentioned light-emitting device, above-mentioned first hyaline layer and above-mentioned second hyaline layer are blocked roughly to be same plane, and expose above-mentioned first hyaline layer.
The light-emitting device of the 3rd side of the present invention, be to have substrate, be formed at positive electrode and negative electrode on the aforesaid substrate, be connected the light-emitting diode on above-mentioned positive electrode and the negative electrode, cover the potting resin layer of above-mentioned light-emitting diode, at least absorb from a part of light of above-mentioned light-emitting diode and be converted to the fluorophor of long wavelength light, change is from the light-emitting component of the lens of the luminous intensity distribution direction of the light of above-mentioned light-emitting diode and/or the above-mentioned fluorophor of person, wherein: above-mentioned potting resin layer, contain above-mentioned fluorophor, and be integrally formed as the shape that constitutes said lens, above-mentioned fluorophor is compared the more highdensity surface vicinity that is distributed in above-mentioned light-emitting diode with the surface vicinity of above-mentioned potting resin layer.
Also have, " transparent " of indication of the present invention is meant the degree of observing lumination of light emitting diode from external energy.
Light-emitting diode preferably has the ultraviolet or the blue light-emitting layer that are made of nitride-based semiconductor.Light-emitting diode with the luminescent layer that is made of nitride-based semiconductor can send to high strength and has high-octane short-wavelength light.Therefore, by the combination fluorophor, can provide the light-emitting device of high brightness and masstone.
If especially fluorophor with separately or with light colour mixture from light-emitting diode after can send white light, just can be applied to the light source of backlight, various indicator light, flashlight, headlight, illuminating lamp etc.
Description of drawings
Fig. 1 is the stereogram of the light-emitting device of expression embodiments of the present invention 1.
Fig. 2 is the sectional view in expression light-emitting device X-X ' shown in Figure 1 cross section.
Fig. 3 is the stereogram of assembling light-emitting device shown in Figure 1 on the model utility ground expression assembled base plate.
Fig. 4 is another routine sectional view of the light-emitting device of expression execution mode 1.
Fig. 5 A is expression forms first transparent resin layer with the streamline finishing a ideograph.
Fig. 5 B is expression forms first transparent resin layer with the streamline finishing a vertical view.
Fig. 5 C is expression forms first transparent resin layer with the streamline finishing a sectional view.
Fig. 6 A is the sectional view that streamline finishing shown in the presentation graphs 5C changes.
Fig. 6 B is the sectional view of other variations of streamline finishing shown in the presentation graphs 5C.
Fig. 6 C is the sectional view of another variation of streamline finishing shown in the presentation graphs 5C.
Fig. 7 A is the stereogram that the expression of model utility ground forms the first transparent resin layer package assembly.
Fig. 7 B is the expression of model utility ground forms second resin bed with the transfer modling forming process a sectional view.
Fig. 7 C is the expression of model utility ground forms second resin bed with the transfer modling forming process a sectional view.
Fig. 7 D is the sectional view of model utility ground expression cutting action.
Fig. 8 A is the sectional view of operation in the middle of the expression execution mode 2.
Fig. 8 B is the sectional view of expression execution mode 2 light-emitting devices.
Fig. 9 A is the sectional view of operation in the middle of the expression execution mode 3.
Fig. 9 B is the sectional view of expression execution mode 3 light-emitting devices.
Figure 10 is the stereogram of an example of expression execution mode 4 light-emitting devices.
Figure 11 is the sectional view for light-emitting device X-X line shown in Figure 10.
Figure 12 is the stereogram of an example of expression package assembly.
Figure 13 is that the part of an expression package assembly part enlarges vertical view.
Figure 14 A is the sectional view that expression potting resin layer forms operation.
Figure 14 B is the sectional view of the continuous Figure 14 A operation of expression.
Figure 14 C is the sectional view of the continuous Figure 14 B operation of expression.
Figure 14 D is the sectional view of the continuous Figure 14 C operation of expression.
Figure 14 E is the sectional view of the continuous Figure 14 D operation of expression.
Figure 14 F is the sectional view of the continuous Figure 14 E operation of expression.
Figure 15 is the stereogram of assembling light-emitting device shown in Figure 10 on the expression model utility ground expression assembled base plate.
Figure 16 A is the chart of 0 ° of direction light distribution characteristic of expression embodiment 1 and comparative example 1.
Figure 16 B is the chart of 90 ° of direction light distribution characteristics of expression embodiment 1 and comparative example 1.
Figure 17 A is the sectional view of embodiment 2 light-emitting devices (sample 1).
Figure 17 B is the sectional view of embodiment 2 light-emitting devices (sample 2).
Figure 17 C is the sectional view of embodiment 2 light-emitting devices (sample 3).
Figure 18 A is the chart of 0 ° of direction light distribution characteristic of expression embodiment 2.
Figure 18 B is the chart of 90 ° of direction light distribution characteristics of expression embodiment 2.
Figure 19 A is the chart of 0 ° of direction light distribution characteristic of expression embodiment 3 and comparative example 2.
Figure 19 B is the chart of 90 ° of direction light distribution characteristics of expression embodiment 3 and comparative example 2.
Figure 20 A is the chart of expression for the chromaticity coordinate x distribution of 0 ° of direction of embodiment 3 and comparative example 2.
Figure 20 B is the chart of expression for the distribution of the chromaticity coordinate x of 90 ° of directions of embodiment 3 and comparative example 2.
Figure 21 A is the chart of expression for the distribution of the chromaticity coordinate y of 0 ° of direction of embodiment 3 and comparative example 2.
Figure 21 B is the chart of expression for the distribution of the chromaticity coordinate y of 90 ° of directions of embodiment 3 and comparative example 2.
Figure 22 is the sectional view that forms potting resin layer operation with the transfer modling forming process.
Embodiment
Execution mode 1
As shown in Figure 1, light-emitting device in the present embodiment has substrate 2, be formed at positive electrode 6 and negative electrode 4 on the substrate 2, be connected light-emitting diode 8 on positive electrode 6 and the negative electrode 4, cover light-emitting diode 8 transparent resin layer (12 and 14), be dispersed in the fluorophor 16 of transparent resin layer 12 and 14, and the fluorophor that can be dispersed in by 8 pairs of the ejaculation light of light-emitting diode in transparent resin layer 12 and 14 carry out excitation luminescence, thereby launch and light from the light different colours of light-emitting diode 8. Transparent resin layer 12 and 14 covers light-emitting diode 8, and has first transparent resin layer 12 and second transparent resin layer 14 that is formed on first transparent resin layer 12 that contains fluorophor 16.Second transparent resin layer 14 is processed into and makes the curved surface shape that forms lens above it.In mutual opposed one group of side of light-emitting device 1, first transparent resin layer 12 and second transparent resin layer 14 are blocked roughly to be same plane, and expose first transparent resin layer 12.
The transparent resin layer 12 and 14 of encapsulation LED 8, constitute two-layer by first transparent resin layer 12 and second transparent resin layer 14, and scatter fluorophor 16 for 12 li at first transparent resin layer, form lens on second transparent resin layer 14, its result shows good light distribution characteristic.That is, at first, formation lens on second transparent resin layer 14, the result has shown predetermined light distribution characteristic corresponding to the shape of lens.Simultaneously because fluorophor 16 is dispersed in first transparent resin layer 12, so can be distributed in light-emitting diode 8 nearby.Therefore, at random by the light of fluorophor 16, be difficult to hinder the lensing of second transparent resin layer 14, and reduce the aberration that produces with direction of observation.
And in the side of light-emitting device 1, first transparent resin layer 12 is blocked with second transparent resin layer 14 roughly to be same plane, and first transparent resin layer 12 of distribution fluorophor 16 exposes externally.Therefore, compare with the light-emitting device of filling the resin bed that scatters fluorophor in the concavity incorporating section in the past, it highly only reaches the thickness of incorporating section sidewall.
And, abut to form the side of lens light-emitting area, owing to exposed the side 12a that scatters first transparent resin layer of fluorophor 16, influence lens peculiarity hardly, and again can the revisal tone.That is,, also can change the amount of fluorophor 16 if change the transparent resin layer thickness that scatters fluorophor 16 with the side of grinding first transparent resin layer 12.Thus, can change the luminous strength ratio of light-emitting diode 8 and fluorophor 16, so can carry out the revisal of tone.In addition, i.e. the side of use grinding first transparent resin layer 12 changes the thickness of transparent resin layer, also almost changes to be formed at second transparent resin layer, 14 lip-deep lens shapes.Therefore, neither influence lens peculiarity, but revisal tone again.
Below, describe in more detail.
Light-emitting device shown in Figure 1, smooth in the above and roughly be on the insulated substrate 2 of rectangular shape, establish predetermined distance and form negative electrode 4 and positive electrode 6.Negative electrode 4 and positive electrode 6 are connected with electrode (not shown) with assembling on being formed at insulated substrate 2 back sides by through hole (not shown).The light-emitting diode 8 that has positive and negative pair of electrodes in the semiconductor surface side, be assemblied on the negative electrode 4 of insulated substrate 2, the positive electrode of the negative electrode of light-emitting diode and the negative electrode on the insulated substrate 4, light-emitting diode and the positive electrode on the insulated substrate 6, each connects with electric wire 10.For covering this light-emitting diode 8, form half-terete first transparent resin layer 12.In addition, on first transparent resin layer 12,, form second transparent resin layer 14 for covering insulated substrate 2 integral body.In addition, the side 14a of side 2 a of insulated substrate, the side 12a of first transparent resin layer 12 and second transparent resin layer 14 is blocked roughly to be same plane, and first transparent resin layer exposes externally.
Fig. 2 is the sectional view in expression light-emitting device 1X-X ' shown in Figure 1 cross section.As shown in Figure 2, fluorophor is dispersed in first transparent resin layer 12.Fluorophor 16 is encouraged by the light from light-emitting diode 8, and is converted to the light of comparing the long wavelength with light-emitting diode 8.For example, when light-emitting diode 8 sent blue light, fluorophor 16 also can absorb a blue part, sends more long wavelength's sodium yellow.Can obtain white light after the yellow that blueness that light-emitting diode 8 sends and fluorophor send, colour mixture.That is, first transparent resin layer 12 in the time of encapsulation LED, plays the function that part or all the light that light-emitting diode is sent carries out the wavelength conversion layer of Wavelength-converting.
Simultaneously, second transparent resin layer 14 as shown in Figures 1 and 2, is processed into the curved surface that makes 14b formation lens above it.In the Figure 1 and Figure 2 example, be formed with half-terete cylindrical lens above second transparent resin layer on the 14b.The lens of this second transparent resin layer form face 14b and become light-emitting area.This cylindrical lens does not have curvature and makes light direct beam in the cross section of light-emitting device 1 Width, but has curvature and make light to the frontal bending in the cross section of light-emitting device 1 length direction.Therefore, when the light from light-emitting diode 8 and fluorophor 16 passes through second transparent resin layer 14, in the length direction of light-emitting device 1, make light towards the frontal bending.So, second transparent resin layer 14 not only has the encapsulated layer function of protection light-emitting diode 8 grades, controls the lens function of light-emitting device radiation direction in addition.In the present embodiment, fluorophor 16 is not dispersed in second transparent resin layer 14.This is because if scatter fluorophor 16, fluorophor 16 will cause that light is at random, thereby hinders the lensing of second transparent resin layer 14.But can on second transparent resin layer 14, scatter a spot of fluorophor that does not hinder second transparent resin layer, 14 lensings.At this moment, the averag density of the fluorophor that contains in second transparent resin layer 14 is preferably below 1/10 of averag density of the fluorophor that first transparent resin layer contains, more preferably below 1/100.
Fig. 3 is expression is assemblied in Figure 1 and Figure 2 light-emitting device 1 state on the assembling substrate as side-looking pattern light-emitting device a stereogram.Light-emitting device 1 be will be parallel to this device length direction the side as fitting surface, be assemblied in assembling on the substrate 3.At this moment, be approximately perpendicular to the assembling substrate as 14b above second transparent resin layer of light-emitting area.In light-emitting device 1 and the side that engages of assembling substrate 3,,, and can stably assemble so the area of fitting surface is big and smooth owing to insulated substrate 2, first transparent resin layer 12 and second transparent resin layer 14 all roughly become same plane.Be formed with on assembling substrate 3 surfaces and just reach negative conductance electrode 18 and 20, and be connected with electrode (not shown) with the assembling that is formed at the light-emitting device 1 insulated substrate back side with scolding tin 22.
The light-emitting device that relates to present embodiment, the transparent resin layer of encapsulation LED 8 is by first transparent resin layer 12 and second transparent resin layer 14 is two-layer constitutes, and fluorophor 16 is dispersed in first transparent resin layer 12, and on second transparent resin layer 14, forming lens, its result shows outstanding optical effect as side-looking pattern light-emitting device.That is, at first, 14b forms cylindrical lens on second transparent resin layer, and the result comes the light of selfluminous device 1, being parallel to the direction of assembling real estate, and towards the frontal bending, and the luminosity grow of frontal.In addition, owing in second transparent resin layer 14, in fact do not scatter and make light fluorophor at random 16, therefore, do not hinder lens function, and make light crooked effectively towards frontal.In addition, second transparent resin layer 14 is not brought into play lens effect in the direction vertical with the assembling real estate., with assembling real estate vertical direction, luminous just is assembled substrate 3 and covers, so the control luminous intensity distribution distributes unimportant.Because fluorophor 16 is dispersed in first transparent resin layer 12, so can be distributed in light-emitting diode 8 nearby.Therefore, few with the aberration that direction of observation produced, and points of proximity light source more.
In addition, the light-emitting device that relates to present embodiment, in the side that is adjacent to the light-emitting area 14b that forms lens, first transparent resin layer 12 is blocked with second transparent resin layer 14 roughly to be same plane, and the side 12a of first transparent resin layer of distribution fluorophor exposes externally.Therefore, compare with filling the light-emitting device that scatters the fluorophor resin bed in the past the concavity incorporating section, it highly only reaches incorporating section sidewall thickness part.And, neither influence lens peculiarity, again can the revisal tone.That is,, and change W ' into, just can change the amount of the fluorophor (not shown) that the first transparent resin layer 12a contains with this thickness W with transparent resin layer if grind the side 12a of first transparent resin layer and the side 14a of second transparent resin layer etc.Thus, the luminous strength ratio of light-emitting diode 8 and fluorophor 16 can be changed, therefore, the revisal of tone can be carried out.On the other hand,, change the thickness W of transparent resin layer, also can change the lens shape that 14b forms on second transparent resin layer hardly even grind the side of first transparent resin layer 12 and the side 14a of second transparent resin layer.Therefore, neither influence lens peculiarity, again can the revisal tone.
And, relate to the light-emitting device of present embodiment, as described later, adopt finishing line or print process can form the resin 12 of first light transmission, so the easy advantage of manufacturing is also arranged.
Below, each structure of light-emitting device 1 is elaborated.
(first transparent resin layer 12)
First transparent resin layer 12, the preferred vicinity that is formed on light-emitting diode 8 as far as possible.This is luminous because be dispersed in the fluorophor 16 of first transparent resin layer, 12 inside, and its distribution is narrow more, just approaching more desirable point-source of light.More wishing to be preferably first transparent resin layer 12 joins with substrate 2.The light of fluorophor 16 generations is at random thus becomes better, and in addition, the colour mixture effect also improves.Simultaneously, the constant intensity of first transparent resin layer 12 also improves.And the height of first transparent resin layer 12 is preferably as far as possible and hangs down a bit.But if it highly is lower than electric wire 10, electric wire 10 will be crossed over first transparent resin layer 12 and second transparent resin layer 14, causes that electric wire 10 is easily broken to be fallen.Therefore, the height of first transparent resin layer 12 is preferably and surpasses electric wire 10 at least.And electric wire 10 is if there is enough intensity, and as shown in Figure 4, first transparent resin layer can cover the part of electric wire.Simultaneously, near desirable point-source of light, preferably deposit fluorophor 16 for 12 li at first transparent resin layer.But fluorophor 16 is if deposition is too much, because the grinding of first transparent resin layer 12 also is difficult to the revisal tone, so preferably suitably deposit.Simultaneously, first transparent resin layer 12 roughly is semi-cylindrical, and the cross section cross section of light-emitting area orthogonal (=with) that is parallel to fitting surface is preferably semicircle shape or semiellipse shape.Thus, reduce with aberration along observed bearing produced.And, first transparent resin layer 12 be formed above-mentioned shape, preferably adopt the streamline finishing that illustrates in the present embodiment.And, as explanation in the enforcement mode 2, also can adopt print process to form first transparent resin layer 12.
The material of first transparent resin layer 12 so long as see through from the light of light-emitting diode and fluorophor and can stably scatter the material of fluorophor 16, does not just have particular determination.For example, can adopt resins such as epoxy resin, silicone resin, hard silicone resin, modified silicone resin, urethane resin, oxetane resin, acrylic acid, Merlon, poly-imines.And, except that resin, also can adopt glass.In first transparent resin layer 12, scatter filler and diffusant and also can.And, because of first transparent resin layer 12 is subject to the heat of light-emitting diode 8, so preferably adopt the good resin of thermal endurance.As preferred employing epoxy resin, silicone resin, hard silicone resin, modified silicone resin, urethane resin, oxetane resin.More wish preferred epoxy, silicone resin, modified silicone resin, urethane resin, oxetane resin.Further wish to be preferably epoxy resin, silicone resin, modified silicone resin, oxetane resin.The viscosity of first transparent resin layer, preferred 100～2000mPas before the sclerosis.In this said " viscosity ", be meant the value of being measured at normal temperatures with cone-plate type rotation viscometer.Simultaneously, first transparent resin layer, the preferred hardness resin that under 80 ℃～180 ℃, the curing conditions of several branch～a few hours, can keep its form level that adopts.
(second transparent resin layer 14)
The lens that form on second transparent resin layer, preferred parallel has the major diameter lens in the direction of fitting surface.This is that the necessity of control light distribution characteristic is higher because being parallel to the direction of fitting surface compares with the direction perpendicular to fitting surface.On the other hand, it is slim to be necessary in the direction perpendicular to fitting surface it to be become, therefore, and preferred small diameter lenses.And perpendicular to the direction of fitting surface, the curvature of lens is preferably little.This is because if form the lens with deep camber perpendicular to the direction of fitting surface, when coming the revisal tone in the side of grinding first and second transparent resin layer, lens peculiarity changes easily.For example, the lens that form on second transparent resin layer can be only to being parallel to the cylindrical lens that fitting surface has curvature.And, to cross section, there is no need smoothly fully perpendicular to second resin bed 14 of fitting surface direction, it is also unimportant to have curvature to a certain extent.
In addition, the material of second transparent resin layer 14 so long as see through material from the light of light-emitting diode and fluorophor, does not just have particular determination.For example, can adopt epoxy resin, silicone resin, hard silicone resin, modified silicone resin, urethane resin, oxetane resin, acrylic acid, Merlon, poly-imines etc.And, except that resin, also can adopt glass.In second transparent resin layer 14, also spreadable filler and diffusant etc.Second transparent resin layer 14, owing to play the effect of protection first transparent resin layer 12 and light-emitting diode 8, the preferred employing with insulated substrate 2 has good adhesiveness, weatherability, hardness height and dustproof material.For example, preferably adopt epoxy resin, silicone resin, hard silicone resin, modified silicone resin, hard silicone resin, oxetane resin.More wish preferred epoxy, silicone resin, modified silicone resin, urethane resin, oxetane resin.Further wish to be preferably epoxy resin, silicone resin, modified silicone resin, oxetane resin.
(insulated substrate 2/ electrode 4,6)
Insulated substrate 2 so long as have the material of suitable mechanicalness intensity and insulating properties, does not just have particular determination.For example, can adopt the BT resin, glass epoxy resin etc. also can adopt the material that multilayer epoxy resin resin is pasted together.And, the negative and positive electrode 4,6 that on insulated substrate 2, forms, preferably adopting with Cu is the metal level of main component.For example, negative and positive electrode 4,6 can constitute with Cu/Ni/Ag.
(light-emitting diode 8/ fluorophor 16)
Light-emitting diode 8 and fluorophor 16 be not if the combination of the light Wavelength-converting of part or all of fluorophor self-luminous in the future diode 8 just has particular determination.Be illustrated as and constitute the maximum white color light emitting device of present demand and the suitable light-emitting diode 8 and the combination of fluorophor 16.
-light-emitting diode 8
Suitable light-emitting diode can adopt to have nitride-based semiconductor (In as constituting the white color light emitting device XAl YGa 1-X-YN, 0≤X, 0≤Y, X+Y≤1) material.This light-emitting diode is with In xGa 1-xN (0＜x＜1) according to its mixed crystal state, can change emission wavelength arbitrarily as luminescent layer in about 365nm to 650nm scope.
Send the light time of white color system, concern that by the complementary color that fluorophor penetrates between the light preferably the emission wavelength with light-emitting diode 8 is set at below the above 530nm of 400nm, more preferably is set at below the above 490nm of 420nm if consider.And, by selecting the kind of fluorophor, can be suitable for the led chip that sends the ultraviolet territory wavelength light that is shorter than 400nm.
-fluorophor 16
Fluorescent material if absorb from being the light that the semiconductor light-emitting-diode of luminescent layer sends with the nitride semiconductor, and is converted to the material of different wavelengths of light, just can adopt.For example, preferred nitride based fluorophor, the nitrogen oxide fluorophor that mainly activates with lanthanide series such as Eu, Ce; Main alkaline earth halogen apatite fluorescent body, alkaline earth metal borate fluorinate, alkali earth metal aluminate fluorescence, alkaline-earth silicate, alkaline earth sulfide, alkaline earth gallium sulfide, alkaline earth silicon nitride, the germanate that activates with migration metal series elements such as the lanthanide series of Eu etc., Mn; Perhaps rare earth aluminate, the rare earth silicate that mainly activates with the lanthanide series of Ce etc.; Perhaps the organic and organic wrong fount that mainly activates with the lanthanide series of Eu etc. etc. is wherein selected more than one at least arbitrarily.As concrete example, can adopt following fluorophor, but be not limited only to this.
Mainly the nitride based fluorophor that activates with lanthanide series such as Eu, Ce has M 2Si 5N 8: (M selects more than one to Eu at least from Sr, Ca, Ba, Mg, Zn.) etc.And, except M 2Si 5N 8: beyond the Eu, also have MSi 7N 10: Eu, M 1.8Si 5O 0.2N 8: Eu, M 0.9Si 7O 0.1N 10: (M selects more than one to Eu at least from Sr, Ca, Ba, Mg, Zn.) etc.
Mainly the nitrogen oxide fluorophor that activates with lanthanide series such as Eu, Ce has MSi 2O 2N 2: (M selects more than one to Eu at least from Sr, Ca, Ba, Mg, Zn.) etc.
Mainly the alkaline earth halogen phosphorus lime fluorophor that activates with migration metal series elements such as lanthanide series such as Eu, Mn has M 5(PO 4) 3X:R (M selects more than one at least from Sr, Ca, Ba, Mg, Zn, X selects more than one at least from F, Cl, Br, I, and R is more than any one of Eu, Mn, Eu and Mn) etc.
Alkaline earth metal borate fluorinate has M 2B 5O 9X:R (M selects more than one at least from Sr, Ca, Ba, Mg, Zn, X selects more than one at least from F, Cl, Br, I, and R is more than any one of Eu, Mn, Eu and Mn) etc.
The alkali earth metal aluminate fluorophor has SrAl 2O 4: R, Sr 4Al 14O 25: R, CaAl 2O 4: R, BaMg 2Al 16O 27: R, BaMg 2Al 16O1 2: R, BaMgAl 10O 17: (R is more than any one of Eu, Mn, Eu and Mn to R.) etc.
The alkaline earth sulfide fluorophor has La 2O 2S:Eu, Y 2O 2S:Eu, Gd 2O 2S:Eu etc.
Mainly in the rare earth aluminate fluorophor that activates with lanthanide series such as Ce, Y is arranged 3Al 5O 12: Ce, (Y 0.8Gd 0.2) 3Al 5O 12: Ce, Y 3(Al 0.8Ga 0.2) 5O 12: Ce, (Y, Gd) 3(Al, Ga) 5O 12The YAG that represents of composition formula be fluorophor etc.And, also have one one or the Tb that all replaces with Tb, Lu etc. with Y 3Al 5O 12: Ce, Lu 3Al 5O 12: Ce etc.
Other fluorophor also have ZnS:Eu, Zn 2GeO 4: Mn, MGa 2S 4: Eu (M selects more than one at least from Sr, Ca, Ba, Mg, Zn, X selects more than one at least from F, Cl, Br, I) etc.
Above-mentioned fluorophor, also can contain according to predetermined replace with add in Eu or the Eu and from Tb, Cu, Ag, Au, Cr, Nd, Dy, Co, Ni, Ti, select more than one.
Ca-Al-Si-O-N is a chlorine nitride glass fluorophor, be meant with molar percentage represent with CaCO 3With CaO be scaled 20～50 molar percentages, with Al 2O 3Be 0～30 molar percentage, SiO is 25～60 molar percentages, AlN is 5～50 molar percentages, is 0.1～20 molar percentage with rare-earth oxide or migration metal oxide, and above 5 kinds of compositions are added up to the fluorophor of the chlorine nitride glass of 100 molar percentages as fertile material.And, in the fluorophor of chlorine nitride glass as fertile material, preferred nitrogen content is below the 15wt%, and become outside the rare earth oxide ion in the fluorescent glass of other rare earth element ions as rare-earth oxide of activator, preferably comprise conactivator with 0.1～10 molar percentage scope content.
In addition, to the phosphor powder outside the above-mentioned fluorophor, also can adopt if any same performance, effect.
(correction method of tone)
Secondly, the correction method to the present embodiment tone describes.When carrying out the tone revisal of most light-emitting devices simultaneously, preferably carry out with following method.
-the phase I.
In the phase I, all measure the colourity (initial stage determination of colority operation) of the light-emitting device after first and second transparent resin layer hardens.
-second stage.
In second stage, the colourity of measuring according to the phase I, poor by between the colourity of above-mentioned measurement and the target colourity, group of the conduct in predefined scope, the chromaticity range of classifying successively (organizing the chemical industry preface).Inhomogeneous for reducing adjusted colourity, though classification group number is The more the better, considers desired chromaticity range (specification) and make efficient, answer proper classification.
-the phase III.
In the last phase III, when grinding first and second transparent resin layer side, only grind the amount (grinding step) that in each group, sets based on difference with target colourity.That is, belong to the light-emitting component of same group, only ground identical amount (by every group of value of setting).According to above method of adjustment, just can adjust colourity together by each group, therefore more effectively adjust colourity, and can reduce the inhomogeneous of colourity.Simultaneously, for not damaging the flatness of fitting surface, preferred grinding step should carry out at the face of tossing about of fitting surface.
Grinding can be carried out as follows.On lapping device, arrange a plurality of light-emitting devices and be ground to target colourity.Milling tool adopts front end at rotating shaft that discoid grinding stone is set, and to first transparent resin layer 12 and second transparent resin layer 14, only grinds respective objects colourity and measures the amount that differs between the colourity.When grinding,, can adjust a plurality of light-emitting devices once with this on each light-emitting device in a plurality of light-emitting devices that are arranged on the lapping device grinding stone being set.At this moment, both can combine grinding according to stock removal, also can individually measure colourity with optical sensor on one side and be ground to target colourity on one side (at this moment, if be arranged on optical sensor and grinding stone on separately the light-emitting device and control the stock removal of each light-emitting component, it is conspicuous just can handling a plurality of light-emitting components side by side simultaneously).
(manufacture method)
Below, the manufacture method that relates to the present embodiment light-emitting device is described.
1. package assembly (package assembly)
In the manufacture method of present embodiment,, till second transparent resin layer that hardens, adopted the package assembly of a plurality of assemblies (package) set in order to make a plurality of light-emitting devices together.In this package assembly, on large-area insulated substrate 2, with the rectangular assembling field that disposes each light-emitting diode 8 (with reference to Fig. 7 A).Simultaneously, as the both sides, assembling field of clamping each light-emitting diode 8, be formed with and each light-emitting diode 8 corresponding negative electrode 4 and positive electrodes 6.And, interconnect between each negative electrode of each row assembly and between each positive electrode.That is, the negative electrode 4 and the positive electrode 6 of each row become a continuous electrode (with reference to Fig. 5 A) separately.Insulated substrate 2 is become by the laminated resin product of thickness by 0.06mm～2.0mm, and forms a plurality of through holes (not shown) that connect thickness direction.Negative electrode 4 and positive electrode 6 by this through hole, are connected with electrode with the assembling that is formed at insulated substrate 2.
2. the assembling of light-emitting diode 8
As mentioned above, on the assigned position of each negative electrode 4 that constitutes package assembly, tube core welding light-emitting diode 8 carries out regulation distribution (with reference to Fig. 5 A) with electric wire 10 again.
3. the formation of first transparent resin layer 12
Secondly, form first transparent resin layer 12.In first transparent resin layer 12, be scattered with the fluorophor 16 of the amount of predesignating.First transparent resin layer 12 is to form good with streamline finishing shown in Fig. 5 A～C.By the streamline finishing, when just first transparent resin layer 12 can be carried out filming, it is simple and easy that manufacturing process also becomes.And, because the streamline finishing can utilize surface tension to form first transparent resin layer 12, so, can form first transparent resin layer 12 along the figure of electric wire 10 and negative electrode 4 and positive electrode 6.Simultaneously, if, suitably carry out the figure of negative electrode 4 and positive electrode 6, just can be near light-emitting diode 8 with the formation domain restrictions of first transparent resin layer.
The streamline finishing is meant shown in Fig. 5 A, when discharging ormal weight first transparent resin layer from dispenser 24, dispenser is moved along the arrangement of light-emitting diode 8, and forms the method that wire connects resin bed.When forming resin bed, can determine the shape of first transparent resin layer 12 according to the surface tension of resin with the streamline finishing.For example, the outer rim of negative electrode 4 and positive electrode 6, just its thickness that exceeds than insulated substrate 2 surfaces.Therefore, if both height have fully differ, just shown in Fig. 5 B and Fig. 5 C, first transparent resin layer 12 can not flow out from the outer rim 4a of negative electrode 4 and positive electrode 6 and 6a according to surface tension.In addition, if suitably control discharge rate, first transparent resin layer 12 just can be kept the height that exceeds electric wire 10 a little according to surface tension.And the cross sectional shape of first transparent resin layer 12 shown in Fig. 5 C, just becomes roughly semicircular in shape or roughly is half elliptic.Adopt the streamline finishing,, can handle most chips simultaneously in the short time according to constituting very easily, and dimensionally stable.Therefore, form first transparent resin layer 12, just can produce in batches, and have the uneven advantage of the tone of reducing with the streamline finishing.
In addition, the situation of its shape can appear only can not keeping with the section difference of electrode 4,6 thickness in the surface tension of first transparent resin layer hour.At this, the structure that prevents that first transparent resin layer from flowing out can be set.For example, among Fig. 6 A, form the wall 32 that forms by protective layer in the outside of negative electrode 4 and positive electrode 6.Among Fig. 6 B, form ditch 34 in the outside of negative electrode 4 and positive electrode 6.And among Fig. 6 C, the section of increasing insulated substrate 2 in the arranged outside of negative electrode 4 and positive electrode 6 differs from 36.
After first transparent resin layer 12 carried out the streamline application, first transparent resin layer 12 hardened.If first transparent resin layer is a thermosetting resin, after the streamline application, heat hardening just can at normal temperatures.To the deposition degree of fluorophor 16 in first transparent resin layer 12, can according to finish that streamline is coated with time of being filled to till the sclerosis beginning and before sclerosis or in the sclerosis viscosity of transparent resin layer control.That is, it is long more that the end streamline is coated with the time that is filled to till sclerosis begins, and can deposit the fluorophor 16 in first transparent resin layer 12 more.Also have, the viscosity of first transparent resin layer 12 is low more before sclerosis, can deposit fluorophor 16 more.Even the high transparent resin of viscosity before the sclerosis, the material as epoxy resin viscosity reduction once after heating when viscosity descends, just can carry out the deposition of fluorophor 16.
4. the formation of second transparent resin layer 14
Secondly, form second transparent resin layer 14.Form second transparent resin layer 14, can adopt methods such as transfer modling forming process, compression forming method, injection molding method.With the transfer modling forming process is that example describes.At first, shown in Fig. 7 A, prepare to form the package assembly (package assembly) 5 of first transparent resin layer 12.Then, shown in Fig. 7 B, adopt the transfer modling forming process with metal die 26 and 28 hold under the arm package assembly 5 about.In Fig. 7 B institute example, downside metal die 26 is smooth, is set to form the lens-type 28a of second transparent resin layer on upside metal die 28.Secondly, shown in Fig. 7 C, by injecting second transparent resin layer 14 in the inlet that forms between upside metal die 28 and the package assembly 5.At this moment, second transparent resin layer 14 is prepared to the particle of half dissolubility, and dissolves resin while being pressed into from inlet.And, in metal die, after the short time heat hardening, take off metal die and heating again, can form second transparent resin layer 14 with this.When forming resin bed with the transfer modling forming process, second transparent resin layer 14 is necessary to adopt the high resin of viscosity to a certain extent.For example, suitable transfer modling such as epoxy resin is shaped.
Replace the transfer modling forming process, also can adopt compression forming method to form second transparent resin layer 14.When especially the resin that is adopted is liquid, not to use the transfer modling forming process, but preferably form second transparent resin layer 14 with compression forming method.When adopting compression forming method to form second transparent resin layer 14, behind second transparent resin layer of application on the whole of package assembly 5, live with signature above the metal die from compression molding, and heat hardening.
5. cutting
Secondly, shown in Fig. 7 D, package assembly 5 is cut from both direction, cut out by Rack and specific length and finish light-emitting device.
Execution mode 2.
In the present embodiment, illustrate about adopting print process to form the example of first transparent resin layer 12.Other business is identical with execution mode 1.
At first, shown in Fig. 8 A, whole of package assembly 5 through printing formation first transparent resin layer 12.First transparent resin layer 12 is formed on whole of insulated substrate 2, and has an even surface.And,, make the thickness of first transparent resin layer 12 fully exceed the height of electric wire 10 for avoiding causing the distortion, cut-out etc. of electric wire 10 by printing first transparent resin layer 12.After this, with 12 heat hardenings of first transparent resin layer.
Secondly, on first transparent resin layer 12 that in whole of insulated substrate 2, forms, adopt the method identical to form second transparent resin layer 14 of being with lens with execution mode 1.Harden after second transparent resin layer 14, package assembly is cut from both direction, just can obtain the light-emitting device 1 shown in Fig. 8 B.And first transparent resin layer 12 so that the method for present embodiment forms becomes the cuboid with insulated substrate 2 roughly the same areas.
Present embodiment forms first transparent resin layer 12 with print process, compares with the streamline finishing of execution mode 1, can form first transparent resin layer 12 at short notice., in print process, must will be arranged on above first transparent resin layer on the position that fully is higher than electric wire 10, therefore, compare the easy thickening of the thickness of first transparent resin layer 12 with the streamline finishing.In addition, shown in Fig. 8 A and 8B, because the distribution of fluorophor 16 is diffused in whole of insulated substrate 2, so be easy to generate the aberration that occurs with direction of observation.
Execution mode 3.
In execution mode 3,, describe Yi Bian suppress the method for fluorophor 16 diffusions to forming first transparent resin layer with print process on one side.
At first, shown in Fig. 9 A, print before first transparent resin layer 12,, on insulated substrate 2, form mask 30 for limiting the print range of first transparent resin layer 12.Mask 30 is by protective layer etc. and constitute.And, for the print range of first transparent resin layer being limited in the vicinity of light-emitting diode 8, mask 30 can make from about hold the parallel stripes shape that light-emitting diode 8 is arranged under the arm.
Harden after first transparent resin layer 12, remove mask 30.Then, with the identical method of execution mode 1, form second transparent resin layer 14.Harden after second transparent resin layer, package assembly 5 from the both direction cutting, just can be obtained the light-emitting device 1 shown in Fig. 9 B.
First transparent resin layer 12 of Xing Chenging shown in Fig. 9 B, roughly be rectangular-shaped, and the width of light-emitting device length direction is shorter than insulated substrate 2 in the present embodiment.That is, the formation scope of first transparent resin layer 12 is limited in the vicinity of light-emitting diode 8.Therefore, compare, can suppress interdependent aberration at direction of observation with execution mode 2.
In the above-mentioned execution mode, although understand forming the example of first transparent resin layer 12 with print process, spray or the moulding by metal die forms first transparent resin layer 12 but also can adopt.
Execution mode 4.
In the present embodiment, the state to individual layer formation resin bed describes.In execution mode 1～3,, be necessary to carry out following two procedures for fluorophor being distributed in the vicinity of light-emitting diode.That is, contain the formation operation of fluorophor resin bed (containing luminescent coating) and do not contain the formation operation of fluorophor lenticular resin bed (lens jacket).
When containing luminescent coating and lens jacket, before the operation that forms lens jacket, contain the easy adsorb organic compound in surface or the moisture of luminescent coating with different operations formation.So, will near the position of potting resin layer interior light emitting diodes, permeate pollutions such as organic substance or moisture, be easy to generate light-emitting diode and fluorophor deterioration, reduce the possibility of life characteristic.And the moisture that permeates in luminescent coating and the lens jacket interface when reflow is assembled, may cause steam blast, interface peel, and problem such as do not work.
In addition, make when containing luminescent coating and lens jacket with different materials, the interface can produce refringence, also may reduce luminous efficiency thereupon.And, contain luminescent coating and lens jacket even make with identical materials, once will form lens jacket after the luminescent coating surface hardening, also may produce small refringence at both interfaces.
Therefore, as shown in figure 10, the light-emitting device of present embodiment has; Substrate 2, be formed at positive electrode 6 and negative electrode 4 on the substrate 2, be connected light-emitting diode 8 on positive electrode 6 and the negative electrode 4, cover the potting resin layer 40 of light-emitting diode 8, absorb at least from a part of light of light-emitting diode 8 and be converted to long wavelength light fluorophor 16, change lens from the luminous intensity distribution direction of the light of light-emitting diode 8 and/or fluorophor 16.Potting resin layer 40 comprises fluorophor 16, and is integrally formed as the shape that constitutes lens.Fluorophor 16, compare the surface that is distributed in light-emitting diode 8 more to high-density with the surface vicinity of potting resin layer 40 contiguous.
The characteristics of the light-emitting device of present embodiment are that the potting resin layer 40 that scatters fluorophor 16 itself constitutes the distribution controls lens, and the fluorophor 16 in its potting resin layer 40 is distributed in the vicinity of light-emitting diode 8.Thus, can carry out the distribution of fluorophor 16 to light-emitting diode 8 vicinities with single operation, and the lens that form control light-emitting device 1 luminous intensity distribution.And, since need not in the middle of sclerosis and once form the potting resin layer 40 of light-emitting diode, so be difficult to infiltration moisture and organic substance in the potting resin layer 40.And, because from light-emitting diode or fluorophor to there not being unnecessary refractive index interfaces between the lens, so can realize high efficiency luminous.
Scatter the potting resin layer 40 of fluorophor, preferably be configured as lenticular with compression forming method.Pass through compression forming method, even application potting resin layer 40 usefulness metal die can be hardened while compressing, therefore, just can adopt before the sclerosis viscosity be under the normal temperature when 5000mPas low viscosity thermosetting resin following, that especially 300mPas is above, 2000mPas is following or sclerosis with the thermosetting resin that was once descending and rising once again with temperature rising viscosity, form predetermined lens.The thermosetting resin that viscosity was once descending when adopting low thermosetting resin of initial stage viscosity or sclerosis makes the fluorophor deposition in the potting resin layer before sclerosis or in the sclerosis, fluorophor can be distributed in the vicinity of light-emitting diode.And, because metal die decision shape can form the lens with predetermined lens diameter and radius of curvature.That is,, can have the lens of predetermined properties simultaneously to light-emitting diode neighbor configuration fluorophor and formation by disposable formation potting resin layer.
To this, always, there are not to have to light-emitting diode neighbor configuration fluorophor and formation simultaneously the lens of predetermined properties, also be difficult to accomplish to carry out simultaneously.For example, in TOHKEMY 2000-196000 communique and the TOHKEMY 2001-352105 communique, make the potting resin layer be configured as lenticular with the transfer modling forming process.The following molded lens of transfer modling forming process.As shown in figure 22, at first, about the top substrate 2 that is equipped with light-emitting diode 8, clamp with transfer modling forming metal mould 26 and 28.Then, inject thermosetting resin 40 by the inlet 28a that forms between upside metal die 28 and the substrate 2.Here the thermosetting resin of Zhu Ruing is the thing of graininess shaping to be made it to be through high-frequency heating etc. partly dissolve state, and injects the gate part 28b of metal die.Metal die 26 and 28 has been heated to the high temperature about 170 ℃, and the resin 40 of injection begins to dissolve from the contact-making surface with metal die.And, exert pressure with plunger 20 from cast gate top, make the hole of 2 of resin 40 inflow metal dies 26 and substrates.Because resin 40 flows into the hole with slower speed, so that electric wire 10 is difficult for is impaired.At this moment,, just can not be controlled at that resin ground flows in the metal die, and be easy to generate defective such as hole if the viscosity of potting resin layer is not brought up to a certain degree.Therefore, scattered fluorophor though be in the lentiform potting resin layer, the fluorophor of the potting resin layer that injects in the metal die also can deposit hardly.Therefore, although can form predetermined lens shape by metal die, fluorophor is distributed in potting resin layer integral body, and produces very strong aberration on direction of observation.
TOHKEMY 2000-315824 communique and for example splashes into low viscosity potting resin layer and when hardening on light-emitting diode, because the deposition of the fluorophor in the potting resin layer, therefore can be at the neighbor configuration fluorophor of light-emitting diode.And, according to the surface tension of potting resin layer before the sclerosis, the lenticular that can accomplish the potting resin laminar surface to a certain extent.Yet, because the lens shape of Xing Chenging is that the surface tension of potting resin layer determines here, so be difficult to form the lens of abundant control luminous intensity distribution.That is, because of can not freely controlling the shape of lens, otherwise the brightness of the brightness of frontal or strong tilted direction or strong etc. can't realize the light distribution characteristic of being scheduled to.Simultaneously, be that balance by surface tension and gravity is determined that if the diameter of the potting resin layer that splashes into is excessive, then hang into droplet profile, especially near the radius of curvature optical axis becomes big because of lens shape.
The material of the potting resin layer 40 that adopts in the present embodiment, the preferred thermosetting resin that was once descending and rising once again with temperature rising viscosity when hardening that adopts, or presclerotic viscosity is to be that 5000mPas is following under the normal temperature, the thermosetting resin that especially 300mPas is above, 2000mPas is following.And, even viscosity is the above resin of 5000mPas at normal temperatures, make also can adopting of fluorophor deposition as long as in metal die, place adequate time before the sclerosis.Thus, can make the contiguous deposition fluorophor of light-emitting diode 8 in the sclerosis of potting resin layer 40 ground or before the sclerosis.The thermosetting resin that was once descending and rising once again with temperature rising viscosity during as sclerosis preferably should adopt silicone resin, hard silicone resin, epoxy resin, modified silicone resin, urethane resin, oxetane resin, acrylic resin, polycarbonate resin, poly-imide resin etc.Wherein, more preferably silicone resin, hard silicone resin, epoxy resin, modified silicone resin, urethane resin, oxetane resin.More preferably hard silicone resin, epoxy resin, modified silicone resin.
For the density that the surface of light-emitting diode 8 is close to fluorophor 16, the surface of preferred package resin bed 40 is close to more than 20 times of density of phosphor, is more preferably more than 50 times.Thus, the light points of proximity light source by light-emitting device penetrates also can suppress the aberration that produces with direction of observation.And in fact preferred fluorophor is not distributed in the part that is shaped with lenticular in the potting resin layer 40.General fluorophor 16 has different refractive indexes with potting resin layer 40 on every side, therefore, has the luminous effect of light-emitting diode at random 8 and other fluorophor 16.Therefore, if distribution fluorophor 16 on the part that is shaped with lenticular just hinders lens function, be difficult to obtain predetermined light distribution characteristic in potting resin layer 40.At this, the part that is shaped with lenticular in the potting resin layer 40 is meant to comprise lens axis, and when the cross section that presents the lens maximum curvature is seen, connects the field that straight line between the lens end and potting resin layer 40 surface are limited.Simultaneously, what is called does not comprise fluorophor 16 haply, be meant and not only comprise the situation that does not comprise fluorophor in its part fully, and, the luminous intensity of the fluorophor that comprises in its part is compared with the luminous of fluorophor of lumination of light emitting diode or light-emitting diode adjacent distributions, in the situation that can ignore degree is also contained in.
Simultaneously, the lens that form in potting resin layer 40 can be made predetermined shape by compression molding.The lens that in potting resin layer 40, form, the lens that preferably have different curvature along the luminous intensity distribution direction.That is, curvature is changed along the lens cross-wise direction.By making lens hold a plurality of curvature, can realize the light distribution characteristic of being scheduled to corresponding to the luminous intensity distribution direction.If especially according to present embodiment,, combine with it and can realize excellent optical because fluorophor can be distributed in the vicinity of light-emitting diode and the state of points of proximity light source.
For example, can use the lens of different curvature in the horizontal direction with vertical direction.As the lens that different curvature is arranged with vertical direction in the horizontal direction, can enumerate semi-cylindrical lens etc.If in potting resin layer 40, form the semi-cylindrical lens, can obtain outstanding light-emitting device as side-looking (side view) type.That is, if the lens that form in the potting resin layer 40 as semi-cylindrical, the lens side of semicolumn is as fitting surface, when so both can become thin light-emitting device, fitting surface broadens and can realize stable assembling.Simultaneously, in side-view type, because cover perpendicular to the luminous substrate that is assembled of fitting surface direction, the distribution controls that is parallel to the fitting surface direction becomes important step and lens are semi-cylindrical, so the lens peculiarity and the common dome lens that are parallel to the fitting surface direction do not have any difference.And, do not influence lens peculiarity and can carry out the revisal of tone yet.That is, carry out thickness, the fluorescence scale of construction that is included in the potting resin layer 40 is changed the change potting resin layers such as grinding of potting resin layer 40 side, therefore can the revisal tone.Even, also can not change the shape of the lens that on potting resin layer 40, form, so to almost not influence of lens peculiarity because of grinding the thickness that changes potting resin layer 40.
And, potting resin layer 40 is also passable as the dome lens that has same curvature for each cross section.If in potting resin layer 40, form dome lens, for example, can obtain outstanding light-emitting device as taking out luminous top view (top view) type from the face that is parallel to fitting surface.
Below, describe the light-emitting device of present embodiment more in detail.
Figure 10 shows the stereogram of the light-emitting device that relates to execution mode 4.Simultaneously, Figure 11 shows the sectional view in the X-X ' cross section of light-emitting device 1 shown in Figure 10.Smooth in the above and roughly be on the insulated substrate 2 of rectangular shape, form the negative electrode 4 and the positive electrode 6 that are provided with predetermined distance.Negative electrode 4 and positive electrode 6 and the assembling that is formed at insulated substrate 2 back sides electrode (not shown) interconnect by through hole (not shown).The light-emitting diode 8 that has pair of positive and negative in the semiconductor surface side, be assemblied on the negative electrode 4 of insulated substrate 2, the negative electrode of light-emitting diode 8 and the positive electrode 6 on the negative electrode on the insulated substrate 4, positive electrode and the insulated substrate, each is to interconnect by electric wire 10.
Light transmission potting resin layer 40 covers light-emitting diode 8 and forms semi-cylindrical.During fluorophor 16 luminous with a part that absorbs light-emitting diode 8 and that convert the long wavelength to intersperses among in the potting resin layer 40.Fluorophor 16 encourages by the luminous of light-emitting diode 8, converts the light than light-emitting diode 8 long wavelengths to.For example, when light-emitting diode 8 sent blue light, fluorophor 16 absorbed a blue part, sends more long wavelength's sodium yellow.The blueness that light-emitting diode 8 is luminous and the yellow of light-emitting phosphor can be sent white light by colour mixture.Simultaneously, fluorophor 16 is deposited on the below in the potting resin layer 40, and near being distributed in above the insulated substrate 2 that sets light-emitting diode 8.Therefore, suppress to observe the fluorescence scale of construction inhomogeneous in each orientation of light-emitting diode 8, reduced the aberration that produces with direction of observation.Simultaneously, be distributed in the vicinity of light-emitting diode 8, near desirable point-source of light by fluorophor 16.And insulated substrate side 2a and potting resin layer side 40a are blocked roughly to be same plane, and fluorophor 16 is distributed to till the side 40a that exposes.
Simultaneously, half-terete potting resin layer 40 constitutes cylindrical lens, and plays the effect of the light of diode 8 of self-luminous in the future and fluorophor 16 by the predetermined direction luminous intensity distribution.For example, potting resin layer 40 is semi-cylindricals, has big refringence by the surface that is in direct contact with outside air layer.Therefore,, be refracted on potting resin layer 40 surface from the light of light-emitting diode 8 with fluorophor 16, and direction luminous intensity distribution in accordance with regulations.The lens that potting resin layer 40 constitutes are not limited only to cylindrical lens, so long as can bring into play the light-focusing function be scheduled to or the lens of light diffusion function get final product.So-called here light diffusion is not by light diffusion at random, and is meant the effect that light is enlarged to wide-angle.For example, various convex lens, concavees lens.
The light-emitting device 1 that relates to present embodiment is characterised in that the potting resin layer 40 that scatters fluorophor 16 itself constitutes distribution controls is distributed in light-emitting diode 8 with fluorophor 16 in lens, its potting resin layer 40 vicinity.Thus, can carry out, to the light-emitting diode 8 contiguous lens that scatter fluorophor 16 and form control light-emitting device luminous intensity distribution with single operation.Simultaneously because need not in the middle of sclerosis but once form the potting resin layer 40 of light-emitting diode, so be difficult to infiltration moisture and organic substance in the potting resin layer 40.And, because from light-emitting diode 8 or fluorophor 16 to there not being unnecessary refractive index interfaces between the lens, so can realize high efficiency luminous.
As the light-emitting device 1 of present embodiment, can be shaped with the compression forming method lenticular by the potting resin layer 40 that will scatter fluorophor 16 and make.Promptly, if according to compression forming method, because harden when the potting resin layer of even application is compressed with metal die, so, can form predetermined lens with the temperature rising viscosity thermosetting resin that rises once again that once descending when adopting presclerotic viscosity to be following low viscosity thermosetting resin of 5000mPas or sclerosis.The thermosetting resin that viscosity was once descending when adopting low thermosetting resin of initial stage viscosity or sclerosis makes fluorophor 16 depositions in the potting resin layer 40 before sclerosis or in the sclerosis, fluorophor 16 can be distributed in the vicinity of light-emitting diode 8.And, because metal die decision shape can form the lens with predetermined lens diameter and radius of curvature.That is,, can carry out simultaneously the configuration of fluorophor 16 and the lens that formation has predetermined properties in the light-emitting diodes 8 pipe vicinities by the potting resin layer 40 that once forms.
(manufacture method of light-emitting device 1)
Below, the method for adopting compression molding manufactured light-emitting device 1 is described in detail.
1. the preparation of package assembly
Present embodiment has adopted the package assembly of assembling a plurality of light-emitting devices as execution mode 1 till sclerosis potting resin layer.As shown in figure 12, in package assembly 5, on extensive insulation substrate 2, dispose the assembling field of the light-emitting diode 8 that is rectangular.Simultaneously, as shown in figure 13,, form negative electrode 4 and positive electrode 6 as the both sides, assembling field of each light-emitting diode 8 of interlinear notes.Tube core welding light-emitting diode 8 on each negative electrode 4, negative electrode 4 and positive electrode 6 connect up by electric wire 10 with light-emitting diode 8.One group of light-emitting diode 8, negative electrode 4 and positive electrode 6 constitute 1 assembly.Simultaneously, in each row assembly, interconnect each other each negative electrode 4 and each positive electrode 6.That is, the negative electrode 4 and the positive electrode 6 of each row become a continuous electrode respectively.
2. contain the application of the potting resin layer 40 of fluorophor 16
Secondly, shown in Figure 14 A, package assembly 5 is arranged on the downside metal die 42 that is heated to set point of temperature.Here the downside metal die 42, preferably be heated to will application potting resin layer 40 a hardening temperature.Secondly, as shown in Figure 14B, fluorophor 16 is evenly mixed the aqueous thermosetting resins rubbed above an amount of application package assembly 5 such as dispenser 24 grades.Thus, light-emitting diode 8, negative electrode 4 and positive electrode 6 are covered through the potting resin layer 40 of uniformly dispersing fluorophor 16 thickness with equalization.At this moment, the application of potting resin layer 40 should be satisfied and forms the required abundant amount of predetermined lens when compressing by metal die.Simultaneously, preferably bury the thickness of electric wire 10 at least fully underground.
3. the formation of potting resin layer 40, a underhardening
Secondly, shown in Figure 14 C and D, above application potting resin layer 40, close upside metal die 44, apply the pressure compression potting resin layer 40 of regulation.Be formed with half-terete lens-type in the upside metal die 44.And, keep official hour, the potting resin layer 40 that a underhardening is made of thermosetting resin with the state of upside metal die 44 compressions.As the thermosetting resin that constitutes potting resin layer 40, it is good should adopting with once the descending thing of rising once again of temperature rising viscosity.For example, can adopt hard silicone resin, epoxy resin etc.Thus, shown in Figure 14 E, in metal die 42 and 44, during the heating potting resin layer 40, can deposit the fluorophor 16 in the potting resin layer 40.For the heating-up temperature of metal die 42 and 44 and the setting of heating time, preferred fully deposition fluorophor 16, and potting resin layer 40 only can keep the regulation shape and reach the condition of abundant hardness.For example, one time hardening temperature preferably is made as 100～170 ℃, more preferably is made as about 120～150 ℃.And firm time preferably is made as 200sec～900sec, more preferably is made as 250sec～600sec.
At this, constitute the thermosetting resin of potting resin layer 40, if adopt, following advantage is just arranged with once the descending thing of rising once again of temperature rising viscosity.That is, the viscosity of resin bed 40 is higher to a certain extent before the application package assembly 5, and therefore, the fluorophor 16 that remains in the potting resin layer 40 in the dispenser 24 less deposits, and keeps the state of the fluorophor 16 of uniformly dispersing easily.Thus, when application contains fluorophor potting resin layer 40 on package assembly 5, can suppress the fluorophor of each light-emitting diode 8 is coated with the inhomogeneous of loading amount.And after the application potting resin layer 40, the viscosity of potting resin layer 40 descends in the time of owing to intensification, so can make fluorophor 16 be deposited on the vicinity of light-emitting diode 8 on each light-emitting diode 8.Thereby adopting with once the descending thermosetting resin that rises once again or presclerotic viscosity of temperature rising viscosity is under the normal temperature below the 5000mPas, the thermosetting resin that especially preferred 300mPas is above, 2000mPas is following.And, even viscosity is the above resin of 5000mPas at normal temperatures, can make also can adopting of fluorophor deposition as long as in metal die, place adequate time before the sclerosis.
And, also can adopt initial stage viscosity low and along with the temperature simple thermosetting resin that increases viscosity that rises.At this moment, for preventing the deposition of fluorophor before the application, be preferably in the dispenser 24 and fully stir.Simultaneously, divide fully deposition, preferably application potting resin layer 40 in advance before the heating in metal die 42 and 44 in order to make fluorescence after the application.For example, application potting resin layer 40 before being provided with in metal die makes fluorophor 16 depositions be provided with also passable afterwards in metal die.
4. the post-curing of potting resin layer 40
Secondly, the package assembly 5 from metal die takes out a underhardening potting resin layer 40 heats and post-curing potting resin layer 40 with defined terms.The sclerosis of potting resin layer 40 is preferably carried out in the setting of post-curing condition fully.For example, the temperature of post-curing be made as equate with hardening temperature or more than, the post-curing time preferably was made as than a longer time of firm time.When adopting epoxy resin, hard silicone resin, the post-curing time is preferably 3～5 hours surely, more preferably about 3.5～4.5 hours.If under this condition, carry out post-curing, just can prevent the residual of in potting resin layer 40 unreacted hardener and the bad influence that the reliability of light-emitting diode 8 is brought.Simultaneously, take out the post-curing that carries out afterwards, can improve the production capacity of operation by metal die 42 and 44.
5. cutting
Secondly, shown in Figure 14 F,, cut out the light-emitting device of Rack and specific length, and finish light-emitting device thus from both direction cutting package assembly 5.That is, at first, be parallel to the cutting of lens direction, cut out the row of the package assembly 5 that forms the semi-cylindrical lens.Then, each the row package assembly that cuts out with perpendicular to the length direction cutting, just obtains each light-emitting device 1 again.
As according to present embodiment,, can carry out to the neighbor configuration fluorophor 16 of light-emitting diode simultaneously and form lens with predetermined properties by forming potting resin layer 40 for the first time.That is, viscosity was once descending when hardening by adopting thermosetting resin and the low thermosetting resin of initial stage viscosity can make fluorophor 16 depositions in the potting resin layer 40 in the sclerosis or before the sclerosis, can make fluorophor 16 be distributed in the vicinity of light-emitting diode 8.Simultaneously, also can adopt in metal die, can keep and make the required sufficient time of fluorophor deposition and the thermosetting resin of low viscosity state.Simultaneously, by metal die 42 and 44, can form lens with predetermined lens diameter and radius of curvature.
Simultaneously,, form lens with compression forming method if will scatter the potting resin layer 40 of fluorophor 16 as present embodiment, just do not need as in the Japanese patent of invention document 3 for keep containing the fluorophor resin glass.Therefore, roughly be and directly form the potting resin layer 40 that has fluorophor 16 and form lens above the smooth insulated substrate 2.Thus,, need not to cover and take out and become possibility to the light that transverse direction penetrates from light-emitting diode 8.And the present invention get rid of to be provided with the concavity cup of taking in light-emitting diode 8.Especially luminous when the frontal luminous intensity distribution with light-emitting diode 8 and fluorophor 16 also can be provided with the concavity cup energetically as speculum.
And, as present embodiment, in potting resin layer 40, form semi-cylindrical (or semi-conical) lens, and, can make the light-emitting device that is fit to the side-view type shape simply by be divided into each and every one light-emitting device through cutting.
(assembling of light-emitting device 1, complementary color)
Secondly, assembling and complementary color to relating to the present embodiment light-emitting device describe.
The light-emitting device of present embodiment is also same with execution mode 1, can assemble and complementary color (with reference to Figure 15).That is, the light-emitting device 1 of semi-cylindrical (=semicircle is tapered) is that the flat bottom surface with semicolumn is a fitting surface, and can be assemblied on the assembling substrate 3.At this moment, the top 40b as the potting resin layer of light-emitting area is and assembling substrate 3 approximate vertical.
This light-emitting device is blocked flatly because of top and bottom, so compare thinner with light-emitting device in the past.And, because fitting surface is to be made of potting resin layer and substrate, so fitting surface becomes big and can realize stable assembling.
Simultaneously, be formed with columned lens (cylindrical lens of sheet convex) above the potting resin layer among the 40b, fluorophor 16 is distributed in the vicinity of light-emitting diode 8 in its potting resin layer 40, and its result demonstrates the good optical effect.That is, at first, formed cylinder lenses among the 40b on potting resin layer 40, the result comes the light of selfluminous device 1, being parallel to the direction of assembling real estate, and towards the frontal bending, and the luminosity grow of frontal.Simultaneously, because of the fluorophor 16 of light at random is deposited on the vicinity of light-emitting diode 8 in the potting resin layer, so, do not hinder the lens function of potting resin layer 40, can make light crooked efficiently towards frontal.Simultaneously, the utmost point that fluorophor 16 is distributed in light-emitting diode 8 nearby, its result, few with aberration that direction of observation produces, points of proximity light source more.And, potting resin layer 40, though do not bringing into play lens effect with the vertical direction of assembling real estate, because it luminously originally just is assembled substrate 3 in the direction vertical with the assembling real estate and covers, even without lens effect also too big problem not.
Simultaneously, the light-emitting device of present embodiment is also same with execution mode 1, can carry out complementary color.That is, as shown in figure 15, potting resin layer side 40a ground etc., the thickness W of potting resin layer is changed over W ', just can change the amount of the fluorophor that comprises in the potting resin layer 40.Thus, the luminous strength ratio of light-emitting diode 8 and fluorophor 16 can be changed, therefore, complementary color can be carried out.In addition, change thickness W, also can change the shape of the lens that form among the 40b above the potting resin layer hardly even grind potting resin layer 40.Can not carry out complementary color when therefore, not influencing lens peculiarity.
When simultaneously a plurality of light-emitting devices being carried out complementary color, preferably carry out with the method for execution mode 1 explanation.
Below, potting resin 40 is described in detail.Other formation is identical with execution mode 1.
The material of potting resin layer 40 there is no particular determination so long as see through from the light of light-emitting diode 8 and fluorophor 16 and can stably scatter the material of fluorophor 16.But in order to make fluorophor be distributed in the vicinity of light-emitting diode, be under the normal temperature below the 5000mPas with once the descending thermosetting resin that rises once again or presclerotic viscosity of temperature rising viscosity when adopting sclerosis, especially 300mPas thermosetting resin above, that 2000mPas is following is good.Thus, can make fluorophor 16 be deposited on the vicinity of light-emitting diode 8 in the sclerosis of potting resin layer 40 or before the sclerosis.The thermosetting resin that was once descending and rising once again with temperature rising viscosity during sclerosis preferably adopts hard silicone resin, epoxy resin etc.In addition, presclerotic viscosity is that 5000mPas is following under the normal temperature, and the thermosetting resin that especially 300mPas is above, 2000mPas is following preferably adopts hard silicone resin, epoxy resin etc.
Simultaneously, the lens that in potting resin layer 40, form, the half-terete cylindrical lens that is not limited only to illustrate in the present embodiment also can adopt various forms.For example, take out luminous top view type, be preferably formed hemispheric convex lens by the face that is parallel to fitting surface.And, can form lens shape beyond the convex lens according to the difference of purposes.And, for any lens, be necessary to select to have to obtain to be scheduled to the curvature of light distribution characteristic and the lens of lens diameter.
Simultaneously, form side-view type when roughly being the semi-cylindrical lens, not only be parallel to the direction of fitting surface, and perpendicular to the direction of fitting surface also some curvature a little.But, perpendicular to the curvature of the direction of fitting surface, preferred minimalization.This is because if form the lens of deep camber and grinding potting resin layer side when carrying out complementary color perpendicular to the direction of fitting surface, lens peculiarity just changes easily.And, because cover, so the lens of not establishing deep camber perpendicular to the direction of fitting surface are too big problem not also perpendicular to the luminous substrate that is assembled of the direction of fitting surface.
Simultaneously, the fluorophor 16 that scatters in potting resin layer 40 is necessary that comparing the surface that is distributed in light-emitting diode 8 more to high-density with the surface vicinity of potting resin layer 40 is close to.For the density that the surface of light-emitting diode 8 is close to fluorophor, preferably be made as contiguous more than 20 times of density of phosphor in surface of potting resin layer 40, more preferably more than 50 times.Thus, can suppress to observe the fluorescence scale of construction inhomogeneous in light-emitting diode 8 each orientation, reduce aberration with direction of observation produced.Simultaneously, be distributed in the vicinity of light-emitting diode 8, near desirable point-source of light by fluorophor 16.Especially the surface of light-emitting diode 8 is close to the density of fluorophor, is preferably contiguous more than 100 times of density of phosphor in surface of potting resin layer 40.Thus, obtain the light distribution characteristic of points of proximity light source in fact, and can prevent aberration.Simultaneously, if diffusant etc. is set, just can scatter light more equably in the surface of potting resin layer 40 vicinity.At this, be close to the density of fluorophor for the surface of potting resin layer 40, be meant on the optical axis of the lens that in potting resin 40, form, on potting resin layer 40 height, when alongst downcutting a part of about 10% from the surface, be included in the averag density (quantity of unit volume) of fluorophor particle wherein.Simultaneously, the density of the contiguous fluorophor 16 in the surface of light-emitting diode 8 is meant on the central shaft of light-emitting diode 8, on the height of potting resin layer 40, when 10% left and right sides is downcut on the surface of light-emitting diode, is included in the averag density of fluorophor particle wherein.
Simultaneously, the part that is shaped with lenticular in the preferred package resin bed 40, fluorophor 16 does not distribute in fact.That is, fluorophor 16 not only has absorption from a part of light of light-emitting diode 8 and carry out the effect of Wavelength-converting, and also has light and the at random effect of reflection from light-emitting diode 8 and other fluorophor 16.Therefore, the part that is shaped with lenticular in the potting resin layer if there is fluorophor to distribute, just hinders lens function, is difficult to obtain predetermined light distribution characteristic.At this, the part that is shaped with lenticular in the potting resin layer is meant the optical axis that comprises lens and when the cross section that manifests the lens maximum curvature is seen, connects straight line between the lens end and the field between the potting resin laminar surface.
Enumerated in the above-mentioned execution mode 1～4 and adopted the light-emitting diode 8 that penetrates light from the electrode side, the example that the electrode on the electrode of light-emitting diode 8 and the insulated substrate 2 is sewed up with lead-in wire.Yet the present invention is not limited only to this, can on insulated substrate 2 light-emitting diode 8 flip-chips be welded.Particularly, make the p lateral electrode and the n lateral electrode of each light-emitting diode 8, the positive and negative electrode that is formed on the insulated substrate 2 is driven a year light-emitting diode accordingly, engages with conductive adhesive members such as scolding tin respectively between the corresponding electrode, and assembles with this.
And the flip-chip welding is same with the formation and the wire-bonded light-emitting diode of light-emitting diode.For example, the situation of nitride semiconductor luminescent element, the a plurality of nitride semiconductor layers that contain n type and p type nitride semiconductor layer in the interarea upper strata stacked package of light-transmitting substrate one side, go up formation p lateral electrode at the p of the superiors type nitride semiconductor layer (p type contact layer), through removing the part of p type nitride semiconductor layer, on the n type nitride semiconductor layer that exposes, form the electrode of n side, and constitute nitride semiconductor device, and the interarea of light-transmitting substrate opposite side is taken out the surface as key light with this.
Embodiment 1
In the present embodiment, adopt following method to make the light-emitting device of structure as shown in Figure 1.
(i) handing-over mounts/goes between stitching
(ii) in the epoxy resin in accordance with regulations mixed YAG fluorophor and carry out the streamline application.
(iii) in hot air drying box, harden.
Curing condition: 150 ℃ 4 hours
(iv) adopt transparent epoxy resin to carry out forming lens with the transfer modling forming process.
Transfer modling curing condition: 150 ℃ 5 minutes (temperature of control metal die)
(v) take out, reharden from metal die.
The condition of rehardening: 150 ℃ 4 hours
(vi) be cut into monolithic with cutting mode.
Comparative example 1
Simultaneously, as a comparative example, made the light-emitting device of forming by the layer of transparent resin bed of following method.
(i) handing-over mounts/goes between stitching
(ii) adopt in advance fluorophor is carried out forming lens with the epoxy resin of regulation mixed with the transfer modling forming process.
Transfer modling curing condition: 150 ℃ 5 minutes (temperature of control metal die)
(iii) take out, reharden from metal die.
The condition of rehardening: 150 ℃ 4 hours
(iv) be cut into monolithic with cutting mode.
In the embodiment that has made, comparative example, Figure 16 A shows 0 ° of direction (the x direction among Fig. 3) light distribution characteristic that is parallel to fitting surface, and Figure 16 B shows 90 ° of directions (the y direction among Fig. 3) light distribution characteristic perpendicular to fitting surface.Among Figure 16 A and Figure 16 B, the light distribution characteristic of symbol 46 expression embodiment, the light distribution characteristic of symbol 48 expression comparative examples.Shown in Figure 16 A and 16B, as can be seen, enforcement of the present invention compares with comparative example that directionality is more excellent, the luminosity of frontal (more than 1.6 times) is higher on 0 ° of direction, the 90 ° of directions.This reason can be speculated as, and is studded with fluorophor in the integral body of the transparent resin layer of formation lens in comparative example, by the light diffusion that causes light at random of fluorophor.In the embodiments of the invention, do not comprise fluorophor in second transparent resin layer in fact, therefore, directionality uprises, the luminosity of frontal uprises.
Embodiment 2
In the present embodiment, method has similarly to Example 1 been made the light-emitting device of structure shown in Figure 4.In the present embodiment, the shape of the lens that form in second transparent resin layer is carried out the making of sample when changing by three kinds of samples.The shape of lens is controlled by the transfer modling forming metal mould.
And manufacturing conditions is identical with embodiment 1.
The sectional view that shows three kinds of samples having made among Figure 17 A～C.
The initial stage optics of sample 1～3, electrical characteristic are as follows.
Table 1
Sample No. Luminosity [mcd] X Y
Sample
1 672 0.281 0.266
Sample 2 724 0.282 0.267
Sample 3 797 0.280 0.264
0 ° of direction (the x direction among Fig. 3) light distribution characteristic that is parallel to sample 1～3 fitting surface is presented among Figure 18 A, is presented among Figure 18 B perpendicular to the branch light distribution characteristic of 90 ° of directions (the y direction among Fig. 3) of fitting surface.Among Figure 18 A and Figure 18 B, symbol 50,52 and 54 is represented the light distribution characteristic of sample 1, sample 2 and sample 3 respectively.Simultaneously, table 2 is depicted as the mean value of each sample light distribution characteristic.
Table 2
Sample No. 0 ° of direction 90 ° of directions
Sample
1 130 143
Sample 2 114 140
Sample 3 96 136
As can be seen from the above results, the lens curvature that forms in second transparent resin layer is big more, and directionality is good more, and the luminosity of frontal is high more.
Embodiment 3
In the present embodiment, made the light-emitting device of structure shown in Figure 10 with the following method.
At first, just reach negative electrode with what form on the substrate bearing of epoxy resin resin bearing gluing that array is made of Cu/Ni/Ag, assembled emission wavelength on to electrode is that the InGaN of 450nm is a blue led at each.Being connected of LED and electrode is to carry out with the terminal conjunction method that adopts spun gold.
Secondly, the substrate bearing that is equipped with LED is loaded in the compressing forming machine metal die that is heated to 120 ℃.And, the liquid epoxy resin that scatters the YAG:Ce fluorophor is splashed on the substrate bearing, and in the metal die of compressing forming machine with 120 ℃ of sclerosis 600sec.Here liquid epoxy resin is that to have adopted initial stage viscosity be the thing of 140 ℃ of 1000mPas, glass transition temperature.And, after the metal die taking-up, again with 150 ℃ of sclerosis 4 hours.So, can obtain as shown in figure 10 light-emitting device with semi-cylindrical lens.
Comparative example 2
As a comparative example, made light-emitting device with the following method.
At first, carrying out 1 same steps as till the assembling LED on the substrate bearing with embodiment.Then, mounting substrate bearing in being heated to 150 ℃ the metal die of transfer modling forming machine, the transfer modling that injects fusion YAG:Ce fluorophor is shaped and use epoxy resin, and among the maintenance 300sec.And, after the metal die taking-up,, then obtain the light-emitting device of semi-cylindrical lens as shown in figure 10 with 150 ℃ of sclerosis 4 hours.
(comparison of luminous intensity)
For the light-emitting device of embodiment 3 and comparative example 2, Figure 19 A shows the light distribution characteristic of the 0 ° of direction (the x direction among Fig. 3) that is parallel to fitting surface, and Figure 19 B shows 90 ° of directions (the y direction among Fig. 3) light distribution characteristic perpendicular to fitting surface.Shown in Figure 19 A and 19B, especially from 90 ° of directions as can be seen, enforcement of the present invention compares with comparative example that directionality is more excellent, the luminosity of frontal is higher.This reason can be speculated as, and is studded with fluorophor in the integral body of the transparent resin layer of formation lens in comparative example, by the light diffusion that causes light at random of fluorophor.In an embodiment of the present invention, do not comprise fluorophor in fact in the lens component of formation potting resin layer, therefore, directionality uprises, the luminosity of frontal uprises.
(comparison of aberration)
Simultaneously, for the light-emitting device of embodiment 3 and comparative example 2, investigated colourity variation along direction of observation.Figure 20 A and Figure 20 B show the variation along direction of observation of chromaticity coordinate x, and Figure 21 A and Figure 21 B show the variation along direction of observation of chromaticity coordinate y.And Figure 20 A and Figure 21 A are that the colourity that is parallel to 0 ° of direction of fitting surface changes chart, and the colourity that Figure 20 B and 21B are perpendicular to 90 ° of directions of fitting surface changes chart.Shown in Figure 20 A, Figure 20 B, Figure 21 A and Figure 21 B, especially from 90 ° of directions as can be seen, embodiments of the invention are compared colourity with comparative example with low uncertainty and suppressed the aberration that produces with direction of observation.Its reason can be speculated as, and fluorophor is dispersed in the integral body of potting resin layer in comparative example, thereby changes along the fluorescence scale of construction of direction of observation.At these, in an embodiment of the present invention, fluorophor is distributed in the vicinity of light-emitting diode 8, and is therefore few with the aberration that direction of observation produced.
Although the present invention has carried out fully record with reference to accompanying drawing to preferred forms, for the people of this technology on top of, all distortion and correction are conspicuous.This distortion and correction only otherwise exceed the scope of the invention that claim limited of enclosing, just should be understood to be included in wherein.

Claims (19)

1. light-emitting device, it has: substrate; Be formed at positive electrode and negative electrode on the aforesaid substrate; Be connected the light-emitting diode on above-mentioned positive electrode and the negative electrode; Cover the hyaline layer of above-mentioned light-emitting diode; At least absorb a part of light of above-mentioned light-emitting diode and convert long wavelength's fluorophor to; Change the lens of the luminous luminous intensity distribution direction of above-mentioned light-emitting diode and/or above-mentioned fluorophor, wherein,
Above-mentioned resin comprises above-mentioned fluorophor, and is configured as formation and roughly is half-terete lens;
Fluorophor in the above-mentioned resin is compared the surface vicinity that is distributed in above-mentioned light-emitting diode more to high-density with the surface vicinity that constitutes the said lens part.
2. light-emitting device, it has: substrate; Be formed at and just reach negative electrode on the aforesaid substrate; Be connected the above-mentioned light-emitting diode that is just reaching on the negative electrode; Cover the hyaline layer of above-mentioned light-emitting diode; Be dispersed in the fluorophor in the above-mentioned hyaline layer, and can carry out excitation luminescence to the fluorophor that is dispersed in the above-mentioned hyaline layer, thereby launch light with the illuminant colour different colours of above-mentioned light-emitting diode by the ejaculation light of above-mentioned light-emitting diode, wherein,
Above-mentioned hyaline layer covers above-mentioned light-emitting diode, and has first hyaline layer that comprises above-mentioned fluorophor, with second hyaline layer that is formed on above-mentioned first hyaline layer;
Above-mentioned second hyaline layer is processed to make the curved surface shape that forms lens above it;
In one group of side of the mutual subtend of above-mentioned light-emitting device, above-mentioned first hyaline layer and above-mentioned second hyaline layer are blocked roughly to be same plane, and expose above-mentioned first hyaline layer.
3. light-emitting device according to claim 2 is characterized in that,
Above-mentioned first hyaline layer is roughly semi-cylindrical.
4. light-emitting device according to claim 2 is characterized in that,
When overlooking above-mentioned hyaline layer from above, the outer rim of above-mentioned first hyaline layer is consistent haply with the above-mentioned outer rim that is just reaching negative electrode.
5. light-emitting device according to claim 2 is characterized in that,
Above-mentioned first hyaline layer is roughly rectangular-shaped.
6. light-emitting device according to claim 2 is characterized in that,
Above-mentioned first hyaline layer covers above-mentioned light-emitting diode of connection and the above-mentioned whole electric wires that just reaching negative electrode.
7. light-emitting device according to claim 2 is characterized in that,
Above-mentioned first hyaline layer is choose wantonly from the group that is made up of epoxy resin, silicone resin, hard silicone resin, modified silicone resin, urethane resin, oxetane resin, acrylic resin, polycarbonate resin, poly-imide resin, glass a kind of.
8. light-emitting device according to claim 2 is characterized in that,
Above-mentioned second hyaline layer, the curved surface shape of formation cylindrical lens above being processed to make.
9. light-emitting device according to claim 2 is characterized in that,
Above-mentioned second hyaline layer is choose wantonly from the group that is made up of epoxy resin, silicone resin, hard silicone resin, modified silicone resin, urethane resin, oxetane resin, acrylic resin, polycarbonate resin, poly-imide resin, glass a kind of.
10. light-emitting device, it has: substrate; Be formed at positive electrode and negative electrode on the aforesaid substrate; Be connected the light-emitting diode on above-mentioned positive electrode and the negative electrode; Cover the potting resin layer of above-mentioned light-emitting diode; At least it is luminous and convert long wavelength's fluorophor to absorb an one of above-mentioned light-emitting diode; Change is from the lens of the luminous intensity distribution direction of the light of above-mentioned light-emitting diode and/or above-mentioned fluorophor, wherein,
Above-mentioned potting resin layer comprises above-mentioned fluorophor, and is integrally formed as the formation said lens;
Above-mentioned fluorophor is compared with above-mentioned potting resin laminar surface vicinity, and the surface that is distributed in above-mentioned light-emitting diode more to high-density is contiguous.
11. light-emitting device according to claim 10 is characterized in that,
Above-mentioned potting resin layer is to constitute with the temperature rising viscosity thermosetting resin that rises once again that once descending during by a kind of the sclerosis.
12. light-emitting device according to claim 10 is characterized in that,
Above-mentioned potting resin layer comprises a kind of in the group that is made up of epoxy resin, silicone resin, hard silicone resin, modified silicone resin, urethane resin, oxetane resin, acrylic resin, polycarbonate resin, poly-imide resin at least.
13. light-emitting device according to claim 10 is characterized in that,
Above-mentioned potting resin layer is to be configured as lenticular by compression forming method.
14. light-emitting device according to claim 10 is characterized in that,
Above-mentioned fluorophor is not distributed in the part that is configured as the said lens shape among the above-mentioned potting resin layer in fact.
15. light-emitting device according to claim 10 is characterized in that,
The density of the above-mentioned fluorophor that above-mentioned LED surface is contiguous is more than 20 times of above-mentioned density of phosphor that above-mentioned potting resin laminar surface is contiguous.
16. light-emitting device according to claim 10 is characterized in that,
Said lens is roughly semi-cylindrical or roughly hemispherical.
17. according to claim 1,2 or 10 described light-emitting devices, it is characterized in that,
Above-mentioned light-emitting device is the side with one group side of above-mentioned mutual subtend, as the side-view luminous device of fitting surface.
18. according to claim 1,2 or 10 described light-emitting devices, it is characterized in that,
Above-mentioned light-emitting diode has the ultraviolet or the blue light-emitting layer that are made of nitride-based semiconductor.
19. according to claim 1,2 or 10 described light-emitting devices, it is characterized in that,
Above-mentioned fluorophor, separately or by with the luminous colour mixture of above-mentioned light-emitting diode, and can send white light.
CNB2006100041539A 2005-02-18 2006-02-20 Light emitting device provided with lens for controlling light distribution characteristic Active CN100481447C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005042543 2005-02-18
JP2005042533 2005-02-18
JP2005042533A JP4953578B2 (en) 2005-02-18 2005-02-18 Light emitting device

Publications (2)

Publication Number Publication Date
CN1822365A true CN1822365A (en) 2006-08-23
CN100481447C CN100481447C (en) 2009-04-22

Family

ID=36923541

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006100041539A Active CN100481447C (en) 2005-02-18 2006-02-20 Light emitting device provided with lens for controlling light distribution characteristic

Country Status (2)

Country Link
JP (1) JP4953578B2 (en)
CN (1) CN100481447C (en)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101261985A (en) * 2007-02-12 2008-09-10 克里公司 Methods of forming packaged semiconductor light emitting devices having multiple optical elements by compression molding
CN102054928A (en) * 2009-10-26 2011-05-11 Lg伊诺特有限公司 Light emitting device package and lighting system
CN102214774A (en) * 2010-04-01 2011-10-12 Lg伊诺特有限公司 Light emitting device package and light unit having the same
CN102386308A (en) * 2010-08-25 2012-03-21 夏普株式会社 Light-emitting device and method for manufacturing light-emitting device
US8154033B2 (en) 2008-12-29 2012-04-10 Everlight Electronics Co., Ltd. LED device and method of packaging the same
CN102456780A (en) * 2010-10-29 2012-05-16 展晶科技(深圳)有限公司 Packaging method of light emitting diode (LED)
CN102478207A (en) * 2010-11-29 2012-05-30 欧司朗有限公司 Optical lens and light emitting component comprising same
CN102956794A (en) * 2011-08-24 2013-03-06 Lg伊诺特有限公司 Light emitting device package
CN103137829A (en) * 2011-12-02 2013-06-05 日立空调·家用电器株式会社 Lighting device
CN103325928A (en) * 2012-03-19 2013-09-25 东芝照明技术株式会社 Luminaire
US8669573B2 (en) 2007-02-12 2014-03-11 Cree, Inc. Packaged semiconductor light emitting devices having multiple optical elements
TWI463704B (en) * 2011-11-24 2014-12-01 Advanced Optoelectronic Tech Light illuminating diode device
CN104347785A (en) * 2013-08-07 2015-02-11 广州众恒光电科技有限公司 Die-method fluorescent powder adhesive layer coating process
CN105164824A (en) * 2013-04-15 2015-12-16 夏普株式会社 Open reel
CN105431941A (en) * 2013-08-01 2016-03-23 克利公司 Light emitting diode package with encapsulant having curved and planar surfaces
US9748449B2 (en) 2003-07-04 2017-08-29 Epistar Corporation Optoelectronic system
US10147853B2 (en) 2011-03-18 2018-12-04 Cree, Inc. Encapsulant with index matched thixotropic agent
CN110197864A (en) * 2018-02-26 2019-09-03 世迈克琉明有限公司 Light emitting semiconductor device and its manufacturing method
CN110265532A (en) * 2011-07-05 2019-09-20 迪睿合电子材料有限公司 Lighting device
US10424702B2 (en) 2012-06-11 2019-09-24 Cree, Inc. Compact LED package with reflectivity layer
CN112599650A (en) * 2020-10-15 2021-04-02 泉州三安半导体科技有限公司 Light emitting device
CN113437109A (en) * 2021-08-30 2021-09-24 深圳市思坦科技有限公司 Flexible LED device, manufacturing method thereof and display device

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009200172A (en) * 2008-02-20 2009-09-03 Sharp Corp Manufacturing method of optical semiconductor device, and manufacturing device of optical semiconductor device
JP5709943B2 (en) * 2008-04-24 2015-04-30 シチズンホールディングス株式会社 LED light source manufacturing method
JP5349167B2 (en) * 2009-06-26 2013-11-20 シチズンホールディングス株式会社 Manufacturing method of LED light source device
US20110116262A1 (en) * 2009-11-13 2011-05-19 Phoseon Technology, Inc. Economical partially collimating reflective micro optical array
DE102010031945A1 (en) * 2010-07-22 2012-01-26 Osram Opto Semiconductors Gmbh Semiconductor device and method for manufacturing a semiconductor device
KR20120093679A (en) * 2011-02-15 2012-08-23 삼성전자주식회사 Light emitting device package and manufacturing method thereof
JP6038443B2 (en) * 2011-11-21 2016-12-07 スタンレー電気株式会社 Semiconductor light emitting device and method for manufacturing semiconductor light emitting device
JP5407007B2 (en) 2011-11-29 2014-02-05 シャープ株式会社 Method for manufacturing light emitting device
JP6219586B2 (en) * 2012-05-09 2017-10-25 ローム株式会社 Semiconductor light emitting device
JP5744338B2 (en) * 2012-09-28 2015-07-08 シャープ株式会社 Method for manufacturing phosphor-containing sealing material, method for manufacturing light emitting device, and dispenser
KR102060195B1 (en) * 2013-09-23 2020-02-11 엘지디스플레이 주식회사 Light emitting diode and method for manufacturing of the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000315822A (en) * 1999-04-30 2000-11-14 Runaraito Kk Light emitting diode and manufacture thereof
US6989412B2 (en) * 2001-06-06 2006-01-24 Henkel Corporation Epoxy molding compounds containing phosphor and process for preparing such compositions
JP4147755B2 (en) * 2001-07-31 2008-09-10 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
JP4292794B2 (en) * 2002-12-04 2009-07-08 日亜化学工業株式会社 Light emitting device, method for manufacturing light emitting device, and method for adjusting chromaticity of light emitting device

Cited By (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9748449B2 (en) 2003-07-04 2017-08-29 Epistar Corporation Optoelectronic system
US8669573B2 (en) 2007-02-12 2014-03-11 Cree, Inc. Packaged semiconductor light emitting devices having multiple optical elements
US9061450B2 (en) 2007-02-12 2015-06-23 Cree, Inc. Methods of forming packaged semiconductor light emitting devices having front contacts by compression molding
CN101261985A (en) * 2007-02-12 2008-09-10 克里公司 Methods of forming packaged semiconductor light emitting devices having multiple optical elements by compression molding
US8822245B2 (en) 2007-02-12 2014-09-02 Cree, Inc. Packaged semiconductor light emitting devices having multiple optical elements and methods of forming the same
US8154033B2 (en) 2008-12-29 2012-04-10 Everlight Electronics Co., Ltd. LED device and method of packaging the same
CN102054928A (en) * 2009-10-26 2011-05-11 Lg伊诺特有限公司 Light emitting device package and lighting system
US9035325B2 (en) 2009-10-26 2015-05-19 Lg Innotek Co., Ltd. Light emitting device package and lighting system
US9039216B2 (en) 2010-04-01 2015-05-26 Lg Innotek Co., Ltd. Light emitting device package and light unit having the same
CN102214774A (en) * 2010-04-01 2011-10-12 Lg伊诺特有限公司 Light emitting device package and light unit having the same
CN102214774B (en) * 2010-04-01 2014-08-13 Lg伊诺特有限公司 Light emitting device package and light unit having the same
CN102386308A (en) * 2010-08-25 2012-03-21 夏普株式会社 Light-emitting device and method for manufacturing light-emitting device
CN102386308B (en) * 2010-08-25 2014-05-21 夏普株式会社 Light-emitting device and method for manufacturing light-emitting device
CN102456780A (en) * 2010-10-29 2012-05-16 展晶科技(深圳)有限公司 Packaging method of light emitting diode (LED)
CN102456780B (en) * 2010-10-29 2014-11-05 展晶科技(深圳)有限公司 Packaging method of light emitting diode (LED)
CN102478207A (en) * 2010-11-29 2012-05-30 欧司朗有限公司 Optical lens and light emitting component comprising same
US10147853B2 (en) 2011-03-18 2018-12-04 Cree, Inc. Encapsulant with index matched thixotropic agent
CN110265532A (en) * 2011-07-05 2019-09-20 迪睿合电子材料有限公司 Lighting device
CN102956794A (en) * 2011-08-24 2013-03-06 Lg伊诺特有限公司 Light emitting device package
US9397274B2 (en) 2011-08-24 2016-07-19 Lg Innotek Co., Ltd. Light emitting device package
TWI463704B (en) * 2011-11-24 2014-12-01 Advanced Optoelectronic Tech Light illuminating diode device
CN103137829A (en) * 2011-12-02 2013-06-05 日立空调·家用电器株式会社 Lighting device
CN103325928A (en) * 2012-03-19 2013-09-25 东芝照明技术株式会社 Luminaire
US10424702B2 (en) 2012-06-11 2019-09-24 Cree, Inc. Compact LED package with reflectivity layer
CN105164824B (en) * 2013-04-15 2018-06-12 夏普株式会社 Open reel
CN105164824A (en) * 2013-04-15 2015-12-16 夏普株式会社 Open reel
CN105431941A (en) * 2013-08-01 2016-03-23 克利公司 Light emitting diode package with encapsulant having curved and planar surfaces
CN105431941B (en) * 2013-08-01 2019-07-30 克利公司 With the light emission diode package member with curved surface and the sealant of flat surfaces
CN104347785A (en) * 2013-08-07 2015-02-11 广州众恒光电科技有限公司 Die-method fluorescent powder adhesive layer coating process
CN110197864A (en) * 2018-02-26 2019-09-03 世迈克琉明有限公司 Light emitting semiconductor device and its manufacturing method
CN110197864B (en) * 2018-02-26 2022-06-14 世迈克琉明有限公司 Semiconductor light emitting device and method of manufacturing the same
CN112599650A (en) * 2020-10-15 2021-04-02 泉州三安半导体科技有限公司 Light emitting device
CN112599650B (en) * 2020-10-15 2022-05-10 泉州三安半导体科技有限公司 Light emitting device
CN113437109A (en) * 2021-08-30 2021-09-24 深圳市思坦科技有限公司 Flexible LED device, manufacturing method thereof and display device
CN113437109B (en) * 2021-08-30 2021-12-28 深圳市思坦科技有限公司 Flexible LED device, manufacturing method thereof and display device

Also Published As

Publication number Publication date
JP2006229054A (en) 2006-08-31
JP4953578B2 (en) 2012-06-13
CN100481447C (en) 2009-04-22

Similar Documents

Publication Publication Date Title
CN1822365A (en) Light emitting device provided with lens for controlling light distribution characteristic
CN1133218C (en) Light emitting device and display device
CN1269229C (en) Semiconductor luminescent device and mfg method thereof
CN1233047C (en) Light emitting diode, optical semiconductor element and epoxy resin composition suitable for optical semiconductor element and production methods therefor
TWI419375B (en) Light emitting device provided with lens for controlling light distribution characteristic
CN1193438C (en) Semiconductor luminescent device and its mfg. method
CN1492521A (en) Semiconductor device and optical device using said semiconductor device
CN1380703A (en) Luminescent device
CN1942703A (en) Light guide body and surface light-emitting device using the same
CN1885581A (en) Semiconductor light emitting device
CN1770488A (en) Method for manufacturing and semiconductor light emitting device
CN1574407A (en) Light emitting device
CN1476640A (en) Light-emitting device and its mfg. method
CN1883057A (en) Light emitting device
CN1868071A (en) Light-emitting device
CN1747192A (en) Light emitting device
CN1934721A (en) Light-emitting device and illuminating device
CN1898358A (en) Oxynitride phosphor and light-emitting device
CN1967888A (en) Light emitting diode mounting substrate
CN101045860A (en) Oxynitride fluorescent material, method for producing the same, and luminescent device using the same
CN1764707A (en) Light emitting film, luminescent device, method for manufacturing light emitting film and method for manufacturing luminescent device
CN1927997A (en) Fluorescent materials and light emitting device
CN1977397A (en) Light emitting device, backlight unit for lighting, display unit and display unit

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant