CN1821798A - Semiconductor laser near and far field distribution observation device - Google Patents
Semiconductor laser near and far field distribution observation device Download PDFInfo
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- CN1821798A CN1821798A CNA2006100075056A CN200610007505A CN1821798A CN 1821798 A CN1821798 A CN 1821798A CN A2006100075056 A CNA2006100075056 A CN A2006100075056A CN 200610007505 A CN200610007505 A CN 200610007505A CN 1821798 A CN1821798 A CN 1821798A
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Abstract
This invention relates to an observation device for the near and far distribution of semiconductor laser, which applies an optical lens system and an image converter tube to constitute two working states so as to observe the near and far field distribution of a mono-chip and array chip directly by eye.
Description
Technical field
The present invention is the device of a kind of observation Fabry-Paro directly perceived (F-P) semiconductor laser equivalent cavity luminous situation in face near field and the luminous situation in far field, belongs to the semiconductor laser technical field of measurement and test.
Background technology
In teaching, research and the manufacture process of semiconductor laser, need comprise that the parameters of photoelectric characteristic tests to device, as indicate semiconductor laser when stimulated emission, the luminous situation in far field of luminous situation in Fabry-Paro (F-P) semiconductor laser equivalent cavity face near field and the long and short axle of sign semiconductor laser light intensity distributions.By observation to hot spot, can help to understand the semiconductor laser performance such as optical density distribution, half-power angle, the angle of divergence of laser instrument, also can find concealed wire, dim spot by the luminous situation in observation Fabry-Paro (F-P) semiconductor laser equivalent cavity face near field.A kind of measure in back becomes to be analyzed laser instrument active area chamber face and burns a kind of means with inherent vice.In known technology, no matter be conventional semiconductor laser device comprehensive tester, still application number is 01124618.9 the disclosed technical scheme that is called " semiconductor laser light; electrical characteristics comprehensive measuring method " of a Chinese invention patent application, in near field distribution, the test aspect of far-field distribution, its major technique measure comprises that all with the semiconductor laser conversion of signals be electric signal, utilize linear array CCD as sensitive detection parts exactly as a kind of known technology in back, with the process collimation that detects, laser after the beam split carries out opto-electronic conversion, again this electric signal is delivered to Computer Processing, obtain test result.In this measuring method, on the ccd detector focal plane, can obtain the information aspect two simultaneously: the one, the spectral distribution of laser facula, the 2nd, the intensity distributions on the hot spot array direction along the line, can measure the device spectral characteristic by the former, can measure the near field distribution of laser according to the latter, obtain the spatial character of laser instrument Laser emission.
Summary of the invention
There is following problem in known technology, 1, the near field distribution of semiconductor laser, far-field distribution all are the luminescence phenomenons of device, test the shortage intuitive after being converted into electric signal, be not suitable for teaching demonstration, and by Direct observation middle product is done quick primary election aborning; 2, a kind of known technology in back has been mentioned and can be used for far-field measurement, but, how explanation does not realize, because horizontal cavity laser instrument laser intensity has length, the branch of minor axis, need to adopt the collimation of nonlinear optical system realization hot spot parallel, and, semiconductor laser for different materials, different wavelength of laser, even different batches, all can there be length in the first diverse location of same crystalline substance, difference on the minor axis, behind the optical alignment parallel system, still can be accurately and truly the space distribution of reproduction laser light device Laser emission be a very complicated technology process, therefore, this known technology fails fully to disclose relevant far-field distribution test contents, can't accurately realize the test of far-field distribution.3, known technology can't be observed near, the far-field distribution of array chip quickly and easily, generally can only test singly single die chip, as primary election operation, inefficiency.In order to overcome the above-mentioned deficiency of known technology, observe near, the far-field distribution of single core, array semi-conductor laser intuitively, satisfy teaching, research to semiconductor laser near, far-field distribution demand of observing directly perceived, meet the requirement of semiconductor laser production primary election operation aspect fast, we have invented the present invention's semiconductor laser near, far field distribution observation device.
The present invention is achieved in that and sees and be mounted with pillar 2 at the middle part of base 1 by Fig. 1, shown in Figure 2 that objective table 3 is fixed on the top of pillar 2, and chip 4 to be measured is shelved on the objective table 3; Side at base 1 is fixed with pole 5, and optical projection system 6 is connected on the pole 5 by swing arm 7, by connecting rod 8 image converter tube 9 is remained on the top of chip 4, and the other end of connecting rod 8 is connected on the pole 5; When the observation near field distribution, optical projection system 6 remains on the top of chip 4, and image converter tube 9 remains on the top of optical projection system 6; When the observation far-field distribution, swing arm 7 is removed optical projection system 6 around pole 5 swings from chip 4 tops, and connecting rod 8 moves down along pole 5, makes image converter tube 9 near chip 4.
Effect of the present invention is, no matter chip to be measured 4 is single die chip or array chip, only needs it is positioned on the objective table 3, is adjusted to optical projection system 6 or/and can be by this device observation in the visual field of image converter tube 9.Because optical projection system 6 and image converter tube 9 these two observation parts have two kinds of duties, a kind of special observation near field distribution, a kind of special observation far-field distribution, thus realized that a covering device realizes the purpose of two kinds of observations.Optical projection system 6 can be amplified the hot spot on chip to be measured 4 optical cavity surfaces, and this hot spot is reached the reception end face of image converter tube 9.Because the image converter tube 9 that is adopted can be converted to infrared light visible light, thereby in process of observation, can be transformed to visible light to the infrared laser of semiconductor laser emission, complete like this can be by near, the far-field distribution of observer with the luminous situation of visual inspection semiconductor laser and the semiconductor laser launched; In addition, image converter tube 9 also has the image intensifying function, and it is a kind of electron multiplication device, and gain can improve observation sensitivity greater than 10,000 times, further guarantees with the directly perceived observation of naked eyes to semiconductor laser near, far-field distribution.This observation directly perceived makes the observer obtain the perceptual knowledge to semiconductor laser near, far-field distribution situation, be more suitable for some link in relevant teaching, scientific research, also can screen the intermediate product that semiconductor laser is produced quickly, whether luminous as observing directly chip, luminous intensity how, near, far-field distribution situation for each single core in the array chip can come into plain view, and in time reject substandard product.Detection such as vertical-cavity-face emitting semiconductor laser (VCSEL) chip, VCSEL compares an advantage that is had with edge-emitting laser be can be before being cleaved into tube core, the key property of carrying out individual devices detects, carry out preliminary surveying, eliminate tube core inferior, there is no need to proceed the technology of back for the bad tube core of performance, save manpower, fund.Can see that by image converter tube 9 working as electric current is added to certain value, when gain was equal to or greater than loss, semiconductor laser swashs penetrated luminous situation, and this current value just is called the threshold current of semiconductor laser.Can observe the increase along with electric current, output light is more and more stronger.The present invention adopts image converter tube 6 observations can also avoid laser may injure human eye.
Description of drawings
Fig. 1 is the present invention's an apparatus structure synoptic diagram, also is the working state schematic representation when being used to observe near field distribution.This width of cloth figure is simultaneously also as Figure of abstract.Fig. 2 is the working state schematic representation of the present invention's device when being used to observe far-field distribution.
Embodiment
See Fig. 1, shown in Figure 2, be mounted with pillar 2 at the middle part of base 1, objective table 3 is fixed on the top of pillar 2, and chip 4 to be measured is shelved on the objective table 3, and objective table 3 connects the negative pole of laser drive power, and positive pole is connected on the positive electrode of chip 4 to be measured by lead; Objective table 3 can be done micro-displacement by the servicing unit of routine on three directions in top to bottom, left and right, front and rear, with the locus of the to be measured chip 4 of accurate adjustment above it.Side at base 1 is fixed with pole 5, and optical projection system 6 is connected on the pole 5 by swing arm 7, by connecting rod 8 image converter tube 9 is remained on the top of chip 4, and the other end of connecting rod 8 is connected on the pole 5; Optical projection system 6 is coaxial with image converter tube 9 optics, and 4 emitted laser bundles of chip to be measured in theory also should be coaxial with the two optics.When the observation near field distribution, optical projection system 6 remains on the top of chip 4, adjusts objective table 3 up and down, and the object space focal plane of optical projection system 6 is overlapped with the optical cavity surface of chip 4 to be measured; Image converter tube 9 remains on the top of optical projection system 6, adjusts connecting rod 8 up and down along pole 5, and the reception end face of image converter tube 9 is overlapped with the focal plane, picture side of optical projection system 6; When the observation far-field distribution, swing arm 7 is around pole 5 swings, optical projection system 6 is removed from chip 4 tops, connecting rod 8 moves down along pole 5, make image converter tube 9 near chip 4, be close to the semiconductor laser of dispersing and all fall into image converter tube 9 and get final product, generally be set at the optical cavity surface 5mm of the receiving end identity distance chip 4 to be measured of image converter tube 9.Can above image converter tube 9, use the camera light spot image, be used for demonstration, comparative observation result etc.
Claims (6)
1, a kind of semiconductor laser near, far field distribution observation device is characterized in that:
1. be mounted with pillar (2) at the middle part of base (1), objective table (3) is fixed on the top of pillar (2), and chip to be measured (4) is shelved on the objective table (3);
2. the side at base (1) is fixed with pole (5), and optical projection system (6) is connected on the pole (5) by swing arm (7), by connecting rod (8) image converter tube (9) is remained on the top of chip (4), and the other end of connecting rod (8) is connected on the pole (5);
3. when the observation near field distribution, optical projection system (6) remains on the top of chip (4), and image converter tube (9) remains on the top of optical projection system (6);
4. when the observation far-field distribution, swing arm (7) is removed optical projection system (6) around pole (5) swing from chip (4) top, and connecting rod (8) moves down along pole (5), makes image converter tube (9) near chip (4).
2, semiconductor laser near according to claim 1, far field distribution observation device is characterized in that, objective table (3) connects the negative pole of laser drive power, and positive pole is connected on the positive electrode of chip to be measured (4) by lead.
3, semiconductor laser near according to claim 1, far field distribution observation device, it is characterized in that, objective table (3) can be done micro-displacement by the servicing unit of routine on three directions in top to bottom, left and right, front and rear, with the locus of the to be measured chip (4) of accurate adjustment above it.
4, semiconductor laser near according to claim 1, far field distribution observation device is characterized in that, optical projection system (6) is coaxial with image converter tube (9) optics.
5, semiconductor laser near according to claim 1, far field distribution observation device, it is characterized in that, when the observation near field distribution, adjust objective table (3) up and down, the object space focal plane of optical projection system (6) is overlapped with the optical cavity surface of chip to be measured (4); Adjust connecting rod (8) up and down along pole (5), the reception end face of image converter tube (9) is overlapped with the focal plane, picture side of optical projection system (6).
6, semiconductor laser near according to claim 1, far field distribution observation device is characterized in that, when the observation far-field distribution, image converter tube (9) is close to the degree that the semiconductor laser of dispersing all falls into image converter tube (9) with chip (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100075056A CN1821798A (en) | 2006-02-13 | 2006-02-13 | Semiconductor laser near and far field distribution observation device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100075056A CN1821798A (en) | 2006-02-13 | 2006-02-13 | Semiconductor laser near and far field distribution observation device |
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| Publication Number | Publication Date |
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| CN1821798A true CN1821798A (en) | 2006-08-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2006100075056A Pending CN1821798A (en) | 2006-02-13 | 2006-02-13 | Semiconductor laser near and far field distribution observation device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102183299A (en) * | 2011-03-21 | 2011-09-14 | 中国科学院西安光学精密机械研究所 | 4f optical system for measuring laser near field distribution |
| CN102183300A (en) * | 2011-03-21 | 2011-09-14 | 中国科学院西安光学精密机械研究所 | 4F optical system for laser near field resolution measurement |
| CN105115698A (en) * | 2015-09-25 | 2015-12-02 | 西安立芯光电科技有限公司 | Comprehensive testing system for semiconductor laser cavity surface failure analysis |
| CN112713494A (en) * | 2019-10-24 | 2021-04-27 | 山东华光光电子股份有限公司 | Device for screening 808nm laser device bars through light spots and working method |
| CN115655662A (en) * | 2022-10-19 | 2023-01-31 | 武汉云岭光电股份有限公司 | Method and system for accurately testing edge-emitting semiconductor laser |
-
2006
- 2006-02-13 CN CNA2006100075056A patent/CN1821798A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102183299A (en) * | 2011-03-21 | 2011-09-14 | 中国科学院西安光学精密机械研究所 | 4f optical system for measuring laser near field distribution |
| CN102183300A (en) * | 2011-03-21 | 2011-09-14 | 中国科学院西安光学精密机械研究所 | 4F optical system for laser near field resolution measurement |
| CN105115698A (en) * | 2015-09-25 | 2015-12-02 | 西安立芯光电科技有限公司 | Comprehensive testing system for semiconductor laser cavity surface failure analysis |
| CN112713494A (en) * | 2019-10-24 | 2021-04-27 | 山东华光光电子股份有限公司 | Device for screening 808nm laser device bars through light spots and working method |
| CN115655662A (en) * | 2022-10-19 | 2023-01-31 | 武汉云岭光电股份有限公司 | Method and system for accurately testing edge-emitting semiconductor laser |
| CN115655662B (en) * | 2022-10-19 | 2023-12-22 | 武汉云岭光电股份有限公司 | Method and system for precisely testing edge-emitting semiconductor laser |
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