CN1820395A - 用于功率半导体模块中的接触设备的压力接触弹簧 - Google Patents
用于功率半导体模块中的接触设备的压力接触弹簧 Download PDFInfo
- Publication number
- CN1820395A CN1820395A CN03826900.7A CN03826900A CN1820395A CN 1820395 A CN1820395 A CN 1820395A CN 03826900 A CN03826900 A CN 03826900A CN 1820395 A CN1820395 A CN 1820395A
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- China
- Prior art keywords
- contact
- spring
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- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 31
- 239000010410 layer Substances 0.000 claims description 37
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 230000004888 barrier function Effects 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 239000002344 surface layer Substances 0.000 claims description 3
- 239000004568 cement Substances 0.000 claims description 2
- 238000001465 metallisation Methods 0.000 abstract description 3
- 238000005452 bending Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000741 silica gel Substances 0.000 description 6
- 229910002027 silica gel Inorganic materials 0.000 description 6
- 102100040428 Chitobiosyldiphosphodolichol beta-mannosyltransferase Human genes 0.000 description 5
- 239000003292 glue Substances 0.000 description 5
- 230000035515 penetration Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 101100491335 Caenorhabditis elegans mat-2 gene Proteins 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- -1 copper beryllium compound Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/02—Contact members
- H01R13/22—Contacts for co-operating by abutting
- H01R13/24—Contacts for co-operating by abutting resilient; resiliently-mounted
- H01R13/2407—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the resilient means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/02—Contact members
- H01R13/33—Contact members made of resilient wire
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
- Wire Bonding (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
- Measuring Leads Or Probes (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CH2003/000569 WO2005020383A1 (de) | 2003-08-22 | 2003-08-22 | Druckkontaktfeder für kontaktanordnung in leistungshalbleitermodul |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1820395A true CN1820395A (zh) | 2006-08-16 |
CN100583566C CN100583566C (zh) | 2010-01-20 |
Family
ID=34200823
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN03826900.7A Expired - Lifetime CN100583566C (zh) | 2003-08-22 | 2003-08-22 | 用于功率半导体模块中的接触设备的压力接触弹簧 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7264481B2 (zh) |
EP (1) | EP1656719B1 (zh) |
JP (1) | JP4800764B2 (zh) |
CN (1) | CN100583566C (zh) |
AU (1) | AU2003254681A1 (zh) |
DE (1) | DE50313607D1 (zh) |
WO (1) | WO2005020383A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101241887A (zh) * | 2007-02-08 | 2008-08-13 | 塞米克朗电子有限及两合公司 | 具有接触弹簧的功率半导体模块 |
CN101202258B (zh) * | 2006-12-13 | 2013-03-27 | 塞米克朗电子有限及两合公司 | 具有接触弹簧的功率半导体模件 |
CN106067455A (zh) * | 2015-04-23 | 2016-11-02 | 爱思开海力士有限公司 | 具有互连部件的半导体封装 |
CN112534653A (zh) * | 2018-08-07 | 2021-03-19 | 采埃孚股份公司 | 用于电接触的组件和电流连接器 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060082315A1 (en) * | 2004-10-20 | 2006-04-20 | Timothy Chan | Method and system for attachment of light emmiting diodes to circuitry for use in lighting |
DE102006034964B3 (de) * | 2006-07-28 | 2007-09-06 | Semikron Elektronik Gmbh & Co. Kg | Anordnung mit einem Leistungshalbleiterbauelement und mit einer Kontakteinrichtung |
DE102007036566A1 (de) * | 2007-08-03 | 2009-02-19 | Siemens Ag | Federkontaktierung von elektrischen Kontaktflächen eines elektronischen Bauteils |
DE102008045614B4 (de) * | 2008-09-03 | 2014-02-13 | Infineon Technologies Ag | Kontaktierung eines halbleiterbauelements oder halbleitermoduls mit einem vorgespannten drahtbauteil und verfahren zur kontaktierung |
DE102013200526B4 (de) * | 2013-01-16 | 2019-11-21 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul und Verfahren zur Herstellung eines Leistungshalbleitermoduls |
US9431311B1 (en) | 2015-02-19 | 2016-08-30 | Semiconductor Components Industries, Llc | Semiconductor package with elastic coupler and related methods |
JP6860510B2 (ja) * | 2015-06-22 | 2021-04-14 | アーベーベー・シュバイツ・アーゲーABB Schweiz AG | パワー半導体モジュール用のばね要素 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1276158B (de) | 1963-10-30 | 1968-08-29 | Harting Elektro W | Kontaktfeder |
US4012094A (en) | 1974-06-13 | 1977-03-15 | Rca Corporation | Electron tube socket having spring-wire contacts |
US4161346A (en) * | 1978-08-22 | 1979-07-17 | Amp Incorporated | Connecting element for surface to surface connectors |
US4505529A (en) * | 1983-11-01 | 1985-03-19 | Amp Incorporated | Electrical connector for use between circuit boards |
JPS615561A (ja) * | 1984-06-20 | 1986-01-11 | Hitachi Ltd | 半導体装置 |
JPS6111284U (ja) * | 1984-06-26 | 1986-01-23 | 沖電線株式会社 | 基板接続コネクタ |
JPS61150249A (ja) | 1984-12-24 | 1986-07-08 | Toshiba Corp | 半導体装置用ソケツトピン |
JPS62136839A (ja) * | 1985-12-10 | 1987-06-19 | Mitsubishi Electric Corp | 半導体装置 |
US5069627A (en) * | 1990-06-19 | 1991-12-03 | Amp Incorporated | Adjustable stacking connector for electrically connecting circuit boards |
JPH04254342A (ja) * | 1991-02-06 | 1992-09-09 | Nec Ic Microcomput Syst Ltd | 半導体集積回路装置 |
JP2559937B2 (ja) * | 1991-12-24 | 1996-12-04 | 三菱電機株式会社 | 半導体装置 |
US6246247B1 (en) * | 1994-11-15 | 2001-06-12 | Formfactor, Inc. | Probe card assembly and kit, and methods of using same |
TW287349B (zh) | 1993-12-28 | 1996-10-01 | Hokuriku Elect Ind | |
JPH1092539A (ja) * | 1996-09-11 | 1998-04-10 | Fujitsu Ltd | 半導体装置用接触子 |
US5764486A (en) * | 1996-10-10 | 1998-06-09 | Hewlett Packard Company | Cost effective structure and method for interconnecting a flip chip with a substrate |
US5904580A (en) * | 1997-02-06 | 1999-05-18 | Methode Electronics, Inc. | Elastomeric connector having a plurality of fine pitched contacts, a method for connecting components using the same and a method for manufacturing such a connector |
JPH10256319A (ja) * | 1997-03-12 | 1998-09-25 | Toshiba Corp | 半導体装置 |
US6579804B1 (en) | 1998-11-30 | 2003-06-17 | Advantest, Corp. | Contact structure and production method thereof and probe contact assembly using same |
US6343940B1 (en) | 2000-06-19 | 2002-02-05 | Advantest Corp | Contact structure and assembly mechanism thereof |
SG98466A1 (en) * | 2001-12-28 | 2003-09-19 | Fci Asia Technology Pte Ltd | An electrical connector |
US7019222B2 (en) * | 2002-01-17 | 2006-03-28 | Ardent Concepts, Inc. | Compliant electrical contact assembly |
US6572386B1 (en) * | 2002-02-28 | 2003-06-03 | Hon Hai Precision Ind. Co., Ltd. | Socket having low wiping terminals |
TW549629U (en) * | 2002-06-25 | 2003-08-21 | Molex Inc | Electrical connector |
-
2003
- 2003-08-22 JP JP2005508135A patent/JP4800764B2/ja not_active Expired - Lifetime
- 2003-08-22 EP EP03818255A patent/EP1656719B1/de not_active Expired - Lifetime
- 2003-08-22 WO PCT/CH2003/000569 patent/WO2005020383A1/de active Application Filing
- 2003-08-22 US US10/567,787 patent/US7264481B2/en not_active Expired - Lifetime
- 2003-08-22 CN CN03826900.7A patent/CN100583566C/zh not_active Expired - Lifetime
- 2003-08-22 DE DE50313607T patent/DE50313607D1/de not_active Expired - Lifetime
- 2003-08-22 AU AU2003254681A patent/AU2003254681A1/en not_active Abandoned
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101202258B (zh) * | 2006-12-13 | 2013-03-27 | 塞米克朗电子有限及两合公司 | 具有接触弹簧的功率半导体模件 |
CN101241887A (zh) * | 2007-02-08 | 2008-08-13 | 塞米克朗电子有限及两合公司 | 具有接触弹簧的功率半导体模块 |
CN101241887B (zh) * | 2007-02-08 | 2012-11-14 | 塞米克朗电子有限及两合公司 | 具有接触弹簧的功率半导体模块 |
CN106067455A (zh) * | 2015-04-23 | 2016-11-02 | 爱思开海力士有限公司 | 具有互连部件的半导体封装 |
CN106067455B (zh) * | 2015-04-23 | 2019-11-19 | 爱思开海力士有限公司 | 具有互连部件的半导体封装 |
CN112534653A (zh) * | 2018-08-07 | 2021-03-19 | 采埃孚股份公司 | 用于电接触的组件和电流连接器 |
Also Published As
Publication number | Publication date |
---|---|
EP1656719A1 (de) | 2006-05-17 |
JP4800764B2 (ja) | 2011-10-26 |
WO2005020383A1 (de) | 2005-03-03 |
DE50313607D1 (de) | 2011-05-19 |
JP2007507080A (ja) | 2007-03-22 |
CN100583566C (zh) | 2010-01-20 |
EP1656719B1 (de) | 2011-04-06 |
US7264481B2 (en) | 2007-09-04 |
AU2003254681A1 (en) | 2005-03-10 |
US20060240685A1 (en) | 2006-10-26 |
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C06 | Publication | ||
PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210511 Address after: Baden, Switzerland Patentee after: ABB grid Switzerland AG Address before: Baden, Switzerland Patentee before: Asea Brown Boveri Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Swiss Baden Patentee after: Hitachi energy Switzerland AG Address before: Swiss Baden Patentee before: ABB grid Switzerland AG |
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CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20100120 |