CN1819259B - 氮化镓半导体装置的封装 - Google Patents
氮化镓半导体装置的封装 Download PDFInfo
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- CN1819259B CN1819259B CN2005101341254A CN200510134125A CN1819259B CN 1819259 B CN1819259 B CN 1819259B CN 2005101341254 A CN2005101341254 A CN 2005101341254A CN 200510134125 A CN200510134125 A CN 200510134125A CN 1819259 B CN1819259 B CN 1819259B
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- semiconductor layer
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- tube core
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electrodes Of Semiconductors (AREA)
- Wire Bonding (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/032,666 | 2005-01-10 | ||
US11/032,666 US20060151868A1 (en) | 2005-01-10 | 2005-01-10 | Package for gallium nitride semiconductor devices |
Publications (2)
Publication Number | Publication Date |
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CN1819259A CN1819259A (zh) | 2006-08-16 |
CN1819259B true CN1819259B (zh) | 2010-12-22 |
Family
ID=35583409
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005101341254A Expired - Fee Related CN1819259B (zh) | 2005-01-10 | 2005-12-26 | 氮化镓半导体装置的封装 |
Country Status (5)
Country | Link |
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US (1) | US20060151868A1 (zh) |
EP (1) | EP1679745A3 (zh) |
JP (1) | JP5492367B2 (zh) |
CN (1) | CN1819259B (zh) |
TW (1) | TW200636957A (zh) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7417266B1 (en) | 2004-06-10 | 2008-08-26 | Qspeed Semiconductor Inc. | MOSFET having a JFET embedded as a body diode |
US7436039B2 (en) * | 2005-01-06 | 2008-10-14 | Velox Semiconductor Corporation | Gallium nitride semiconductor device |
US20100140627A1 (en) * | 2005-01-10 | 2010-06-10 | Shelton Bryan S | Package for Semiconductor Devices |
DE102005018941B4 (de) * | 2005-04-22 | 2010-07-08 | Infineon Technologies Ag | Halbleiterbauteil in einem Standardgehäuse und Verfahren zur Herstellung desselben |
WO2007010315A2 (en) | 2005-07-20 | 2007-01-25 | Infineon Technologies Ag | Leadframe strip and mold apparatus for an electronic component and method of encapsulating an electronic component |
US8026568B2 (en) | 2005-11-15 | 2011-09-27 | Velox Semiconductor Corporation | Second Schottky contact metal layer to improve GaN Schottky diode performance |
CN201011655Y (zh) * | 2007-01-10 | 2008-01-23 | 上海凯虹科技电子有限公司 | 一种大功率半导体器件的框架 |
US7447041B2 (en) * | 2007-03-01 | 2008-11-04 | Delphi Technologies, Inc. | Compression connection for vertical IC packages |
US7633055B2 (en) * | 2007-03-08 | 2009-12-15 | Lumination Llc | Sealed light emitting diode assemblies including annular gaskets and methods of making same |
US7939853B2 (en) * | 2007-03-20 | 2011-05-10 | Power Integrations, Inc. | Termination and contact structures for a high voltage GaN-based heterojunction transistor |
US8120161B2 (en) * | 2007-04-10 | 2012-02-21 | Infineon Technologies Ag | Semiconductor module including semiconductor chips coupled to external contact elements |
US7972913B2 (en) * | 2009-05-28 | 2011-07-05 | Freescale Semiconductor, Inc. | Method for forming a Schottky diode |
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Also Published As
Publication number | Publication date |
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EP1679745A3 (en) | 2013-01-09 |
TW200636957A (en) | 2006-10-16 |
EP1679745A2 (en) | 2006-07-12 |
US20060151868A1 (en) | 2006-07-13 |
JP5492367B2 (ja) | 2014-05-14 |
JP2006203195A (ja) | 2006-08-03 |
CN1819259A (zh) | 2006-08-16 |
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