CN1819259B - 氮化镓半导体装置的封装 - Google Patents

氮化镓半导体装置的封装 Download PDF

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CN1819259B
CN1819259B CN2005101341254A CN200510134125A CN1819259B CN 1819259 B CN1819259 B CN 1819259B CN 2005101341254 A CN2005101341254 A CN 2005101341254A CN 200510134125 A CN200510134125 A CN 200510134125A CN 1819259 B CN1819259 B CN 1819259B
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semiconductor layer
metal
tube core
contact surface
contact
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CN1819259A (zh
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布赖恩·S.·谢尔顿
马莱克·K.·帕比兹
马克·戈特弗里格
刘琳蔺
朱廷刚
伯里斯·佩雷斯
艾里克斯·D.·塞卢兹
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Power Integrations Inc
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Velox Semiconductor Corp
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Abstract

一种封装的半导体装置，特别是氮化镓半导体结构，包括：下半导体层和位于所述下半导体层的一部分之上的上半导体层。该半导体结构包括从下层向上凸起的多个台，每个台包括上层的一部分并限定上触点平面，该上触点表面与所述多个台被所述下触点表面的一部分分开。该装置还包括管芯安装支撑物，其中，管芯的底部表面被附着于管芯安装支撑物的顶部表面；从支撑物伸出的多个隔开的外部导体，至少一个所述隔开的外部导体在其一端具有接合线柱；具有接合线，其在接合线柱和多个台的顶部表面的触点区域之间延伸。

Description

氮化镓半导体装置的封装
本发明关于被转让给共同受让人的、在2004年2月17日提交的第10/780,363号美国专利申请，并由此被包括以资参考。
技术领域
本发明涉及封装的半导体装置，更具体地说，涉及围住高功率氮化镓半导体装置的导线框架和封装。
背景技术
诸如二极管、MOS场效应装置(如MOSFET)等的半导体装置一般形成在被切割成包含单独的装置或集成电路的管芯(die)的硅半导体晶片中。该管芯具有MOSFET中的被电连接到源的金属化的垫或者其它源、栅、和漏电区电极，或者具有二极管中的阳极和阴极。这些垫形成在管芯的上表面上并还用作线的接合区域，这些线是被接合的线并且从管芯的导电电极区域延伸到导线框架的平连接柱区域。柱区域被依次连接到从框架平行延伸的外部导引导体并被调整以将该装置安装在印刷电路板上。这些外部导引导体穿过一个铸型的、包覆(overmold)导线框架和管芯的外壳而延伸。为了增加封装处理的效率，导线框架将包含多个相同的部分，每个部分对应于单个封装的半导体装置，这些部分被同时处理以接收分离的管芯和线接合以及包覆。在铸型处理之后，各个装置随后被分离。最终装置的封装涉及可遵守或服从众所周知的封装标准，例如，TO-220、TO-247、DPAK、D2PAK、TO-263或者其它封装波形系数。
在光电和其它应用中使用的氮化镓装置的开发已提出了对于这样的装置的新的封装要求，而制造的经济考虑以及客户对于针脚兼容的组件的期望已指定了这样的封装仍遵守行业接受的封装格式。
发明内容
1、本发明的目的
本发明的目的在于提供一种用电半导体装置的改进的封装。
本发明的另一目的在于提供一种符合行业接受的封装格式的用于氮化镓半导体装置的封装。
本发明的另一目的在于提供用于提高可靠性和降低制造成本的导线框架配置和半导体装置结构。
本发明的另一目的在于提供一种使用倒装芯片技术封装半导体装置的改进的方法。
根据包括以下详细描述的本公开以及通过实践本发明，对于本领域的技术人员，本发明的另外的目的、优点、和新特征将变得明显。尽管本发明在下面参照优选实施例被描述，应该理解步伐名不局限于此。已经接触了这里的教导的本领域的普通技术人员将在其它领域中认识到另外的应用、修改和实施例，这些都在在此公开并要求权利的本发明的范围内，并且对于它们，本发明具有实用性。
2、本发明的特征
简要并且概括地，本发明提供一种封装的半导体装置，包括具有包括从下触点表面向上凸起的多个台的顶部表面的半导体管芯，每个台限定上触点表面，该上触点表面与所述多个台的相邻的上触点表面被所述下触点表面的一部分分开。
该装置还包括：管芯安装支撑物，其中，管芯的底部表面被附着于该管芯安装支撑物的顶部表面；和外壳，其围住半导体管芯和管芯安装支撑物。
多个隔开的外部导体从外壳伸出，并且至少一个外部导体在其一端具有接合线柱；接合线在接合线柱和半导体管芯的上触点表面上的多个台所共有的一个触点区域之间延伸。
在此描述的本发明的方法和装置因此可联合装置和/或其它半导体装置结构被使用以改善其可靠性、控制和稳定性。本发明因此适用于任何使用限定激活区域的台结构的半导体装置，尤其适用于III-V半导体装置。
被认为是本发明的特点的新特征在所附权利要求中被具体地阐述。然而，关于本发明的构造及其操作方法，根据下面的特定实施例的描述连通同时阅读的附图，本发明自身与其另外的目的和优点将被最好地一起理解。
附图说明
通过参照以下详细描述同时结合考虑附图，本发明的这些和其它特征和优点将会被更好地理解和更充分地认识。
图1A、1B和1C是具有各种不同的线接合结构的根据本发明的封装的半导体装置的透视图；
图2是根据本发明的具有单个半导体管芯的导线框架的详细顶部平面图；
图3是根据本发明的具有两个半导体管芯的导线框架的详细顶部平面图；
图4是根据本发明的氮化镓半导体结构的放大的详细顶部平面图；
图5是穿过图4中显示的A-A平面的根据本发明的半导体结构的片断横截面详图；
图6是穿过图4中显示的A-A平面的本发明的另一实施例的片断横截面详图；和
图7是图6的实施例中的半导体结构的顶部平面图。
具体实施方式
现在将描述本发明的细节，包括本发明的示例性方面和实施例。参照附图和下面的描述，相同的标号被用于识别相同的或功能上类似的部件，并且意图以高度简化的图示方式示出示例性实施例的主要特征。而且，这些附图不是意图描述实际的实施例的每一特征，描述的部件的相对尺度也不是按照比例画出。
参照图1A、1B和1C，一套被安装到导线框架并包括根据本发明的特征的半导体管芯105的片断透视图被显示。具体地说，在每幅图中，附于支撑物104并从支撑物的前壁平行延伸的导线(leads)或电极101、102和103被显示。导线101和103可构成与半导体管芯105的激活区域的电触点，而中心导线102可构成与封装自身内的其它安装部件的电触点。
支撑物104最好包括铸型的塑料材料并封装导线框架。半导体管芯105通过环氧树脂被安装到支撑物104。线接合(wire-bond)108和109被用来构成在半导体管芯105的上表面上的激活区域和在导线101和103上的线接合着落垫110、或者在支撑物104表面上的线接合着落区域或垫107之间的电连接。
具体地说，图1A显示根据本发明的、具有第一线接合排列的半导体封装的前透视图。具体地说，线接合108被电连接到导线103，线接合109被电连接到垫107。
图1B是示于图1A中的封装的后透视图，显示这样的线接合，即一个线接合108被连接到导线103，另一个线接合109被连接到垫107。垫107被电连接到中心导线102。
图1C是在线封装的第二实施例中的根据本发明的封装的后透视图，在该第二实施例中，一个线接合108被连接到第一导线103，另一个线接合109被连接到第二导线101。
图2和图3描述根据本发明的导线框架的顶平面图。更具体地说，图2示出具有单个管芯105的导线框架，图3示出具有两个管芯105A和105B的导线框架。在两幅图中，中心导线102被连接到地。
在该优选实施例中，半导体装置是高功率二极管，并且阳极和阴极被附于封装管芯中的两个分离的接合电极(其也被称为导线，封装的导线框架具有三个导线)。此外，在本发明的范围内，多个线从管芯自身延伸到这两个导线的每一个。因此，取决于管芯的结构和使用的接合线的类型，可以有来自阳极的多于一条的接合线，以及来自阴极的多于一条的接合线。除了高功率二极管之外，其它的GaN装置也可被包括进此封装，包括：GaN场效应晶体管(FET)或者符合集成和工业的需要的二极管和FET的任何组合。可对导线框架构成线接合连接以及从一个管芯到另一个管芯构成线接合连接，以提供多个管芯和封装之间的必要的互连。任何数量的管芯可被包括在封装中，假定这些管芯适合所分配的空间。
在该优选实施例中，两个五毫英寸(5mil)的铝线被接合的管芯的阴极接线端，这样的线被依次连接到中心导线。
两个五毫英寸(5mil)的铝线还被连接到管芯的阳极接线端，这样的线被依次连接到最右侧的导线。
一些用电装置的需求要求阴极和阳极的线接合具有足够的尺寸(全部的线的面积)以承受冲击电流。考虑到此点，有必要增加尺寸以承受比两条5mil Al线更高的冲击电流。在标准GaN肖特基(Schottky)二极管管芯的情况下，两条5mil的线将能够承受8.2ms半正弦波脉冲列(60Hz连续的)20-30A的冲击电流。对于更高的冲击电流接受力，必须使用10mil或15mil Al线。在其它实施例中，尽管有人可能要求从阳极到导线的全部线厚度(所有线的和)大于8mil(在此情况下，对于阴极和阳极的每一个有4条两毫英寸(2mil)线，在封装中一共有8条线)，但是线可由金制成并可小至2mil。
图4是根据本发明的氮化镓半导体装置的放大的顶平面图，显示由图3中的管芯105A或105B示出的装置上的线接合触点区域。如通过图4中指定的A-A平面所看到的，以及通过细查由图5示出的装置的片断横截面图而将看到的，该装置被配置成台式(mesa)结构，在该结构中，平面区域401位于比平面区域403更高的平面。
更具体地说，显示了在第一区域401的表面上的两个线接合区域402和407，表示与如图5所示的激活的肖特基金属的触点，以及在第二或较低的区域403上的两个线接合区域408和409、表示与激活的欧姆金属的触点。
图5是穿过图4中显示的A-A平面的根据本发明的半导体结构的片断横截面详图。
具体地说，显示了蓝宝石基底501、GaN的重掺杂(n+)层502、和在层502的一部分之上沉积的长掺杂(n-)层503。如在图4中更具体地显示的，层503被布置在“指状物”405中，该指状物405从等分管芯105A的中心线以相反的方向延伸。诸如镍的金属被沉积在n-GaN层503上以形成肖特基结，以使所得到装置为肖特基二极管。
诸如铂的势垒金属被沉积在激活的肖特基金属之上，诸如铝的金属板层被沉积在势垒金属之上。金属板层形成图4中的区域401，该区域401表示到二极管的一个接线端的电触点，更具体地被表示为两个大体上为正方形的、每个大约长375微米的接合垫或者区域402和407，它们位于管芯105A的中心区域中。
类似地，用Al/Ti构成对n+GaN层的激活的欧姆触点，其形成在较大的指状物之间相对较窄的区域406。诸如铂的势垒金属被沉积在欧姆触点层之上，并且诸如铝的金属板层被依次沉积在势垒金属层之上。金属板层形成图4中的区域403，其表示到二极管的第二接线端的电触点，更具体地被表示为两个大体上为正方形的、每个边长大约为375微米的接合垫或者区域408和409，它们位于芯片105A的相对的边缘或者***边缘。
图6是穿过图4中显示的A-A平面的本发明的另一实施例的片断横截面详图。更具体地说，第一电介质层601覆盖管芯的第一部分中的激活的欧姆层，阳极接合金属层被沉积构成与每个“指状物”405的电触点，并形成管芯的一侧上的阳极接合垫区域。类似地，第二电介质层被沉积在阳极接合金属层之上，并具有通孔以允许阴极接合金属层被沉积构成与欧姆触点的电触点。诸如图7所示，这样的阴极金属层形成在管芯的另一侧上的接合垫区域。对于用于减少整体装置阻抗的肖特基和欧姆连接两者的必要的金属堆叠的细节将在2005年1月6日提交的美国专利申请11/030554“GALLIUM NITRIDESEMICONDUCTOR DEVICES”中被描述。
理论上，对于横向GaN肖特基二极管，通过使用如图4所示的窄的手指形状的肖特基触点区域，给定的电流密度的最低前向操作电压被获得，其优化在低掺杂n-GaN层中传播的横向电流。此外，欧姆金属迹线(trace)也被优化以减少金属延展阻抗。然而，与大的单个金属触点垫相反，手指形状的肖特基台区域要求用于阳极和阴极互连的长的肖特基和欧姆金属迹线，导致更大的触点金属延展阻抗。结果，前向操作串联阻抗增加并引起不均匀分布的电流。尽管使用在肖特基和欧姆金属迹线两者中均匀分布的多个线接合可减少金属延展阻抗，封装的成本还会增加。除了电流分布的不一致性之外，由于蓝宝石基底的较差的导热性，所以GaN/蓝宝石外延层肖特基二极管的热敏电阻比硅或SiC高得多。再加上没有有效的热导体被直接用于以上的激活区域这一事实，所导致的操作结温度的增加对装置的可靠性是有害的，还限制了装置的操作范围。
通过将管芯的外延侧直接安装到热沉(heat sink)或者安装部件，倒装芯片处理可显著减少热敏电阻。一种运用倒装芯片的普通方式是先将管芯首先附着于子衬底(submount)，然后将子衬底附着于封装导线框架。然而，额外的子衬底和管芯的附着将会增加总共的封装成本。
本发明的一个实施例打算制造芯片表面上适当的电极，并随后经由倒装芯片方法将管芯直接附着在导线框架上。
根据本发明的处理或者装置制造的顺序可以被如下描述：
1、在包括蓝宝石基底、GaN的重掺杂(N+)层、和GaN的轻掺杂(N-)层的外延结构上沉积金属层(固有的GaN可代替N-GaN)。该金属和N-GaN层应该形成肖特基触点。此肖特基金属也用作肖特基二极管装置的阳极金属。
2、成型台可以是单个电极或者是多个电绝缘的岛。(作为另一种选择，步骤1和2的顺序可以互换)。
3、将n类型欧姆金属沉积在剩下的N+层上。该n类型欧姆金属用作肖特基二极管装置的阴极触点。
4、将具有开口的电介质层沉积在阳极金属层的大部分以及阴极金属层的选择部分的顶部。该电介质层起这样的作用，其使阳极与阴极触点区域绝缘。
5、沉积单个电极金属层，该金属层：
·通过在处理步骤4中描述的阳极开口提供到阳极台结构的公共连接。
·通过在步骤4中描述的所述阴极开口建立阴极金属。
·注意到此步骤5可被分为两个不同的金属沉积步骤：首先覆盖阳极，其次覆盖阴极。
6、沉积具有两个开口的电介质层，所述开口暴露阴极和阳极金属的部分或者整个表面。该电介质层必须使阳极与阴极区域隔离。
7、通过在步骤6中描述的开孔，沉积互连金属迹线用于阴极和阳极两者到下一阶段封装的互连。
8、(可选)接合垫的一部分可用电介质的非导电层覆盖以防止在高电压下形成弧光(未显示)。
9、在完成处理步骤6或7之后，通过使用导电环氧树脂或者通过焊接将芯片附着于导线框架。
应该理解，上述每个或者两个或更多的处理步骤或者组成部件还可以在其它不同于上述类型的其它类型的构造中找到有用的应用。
尽管本发明已将氮化镓结构作为封装的半导体装置示出并描述，但是由于在不以任何方式背离本发明的精神的情况下可进行各种修改和结构的改变，所以并不是意图将本发明限制于显示的细节。
不用进一步分析，前述内容将充分揭示本发明的精髓，通过应用当前的指示，其他人可以容易地改动它以适应各种应用而不忽略这样的特征，即从现有技术出发，清楚地构成本发明的一般或特定方面的实质特点，因此，这样的改动应该意图在权利要求的等同物的意义和范围内被理解。

Claims (15)

1.一种半导体装置，包括：
半导体管芯，其具有顶部表面和与所述顶部表面相对的底部表面，所述顶部表面包括下半导体层和位于所述下半导体层的一部分之上的上半导体层，其中所述下半导体层和所述上半导体层具有相同的导电性类型，所述下半导体层比所述上半导体层被更重地掺杂，所述半导体管芯具有包括所述下半导体层的至少一部分的下触点表面，且所述半导体管芯包括从所述下触点表面向上凸起的多个台，所述多个台的每一个包括所述上半导体层的一部分并形成上触点表面，该上触点表面与由所述多个台中的相邻的台形成的上触点表面被所述下触点表面的一部分分开，并且所述多个台的每一个至少具有设置在所述下触点表面上且与其欧姆接触的一个或多个下金属触点，所述一个或多个下金属触点的至少一部分在所述多个台中的至少一些台之间延伸；
管芯安装支撑物，其具有顶部和底部，其中，所述管芯的底部表面被附着于所述管芯安装支撑物的顶部；
外壳，围住所述半导体管芯和所述管芯安装支撑物；
从所述外壳伸出的多个隔开的外部导体，至少一个所述隔开的外部导体在其一端具有接合线柱；和
第一接合线，其在所述接合线柱之一和在所述半导体管芯的上触点表面上的且为所述多个台所共有的第一触点区域之间延伸。
2.如权利要求1所定义的装置，其中，所述上半导体层和下半导体层由氮化镓构成。
3.如权利要求1所定义的装置，还包括第二接合线，其在所述的所述接合线柱之一和在半导体管芯的上触点表面上、并且为所述多个台共用的第二触点区域之间延伸。
4.如权利要求3所定义的装置，其中，所述第一和第二接合线具有五毫英寸厚。
5.如权利要求3所定义的装置，其中，所述第一触点区域和所述第二触点区域是具有375微米的边长的正方形。
6.如权利要求1所定义的装置，还包括第三接合线，其在另一个所述接合线柱和在半导体管芯的下触点表面上的第三触点区域之间延伸。
7.如权利要求1所定义的装置，其中，所述半导体管芯是能够在前向电压下以8安培操作的二极管。
8.如权利要求6所定义的装置，还包括第四接合线，其在所述另一个所述接合线柱和在半导体管芯的下触点表面上的第四触点区域之间延伸。
9.如权利要求1所定义的装置，其中，所述装置是肖特基二极管。
10.如权利要求1所定义的装置，其中，所述多个台形成一列延长的平行指状物，这些指状物从半导体管芯的中间的中心区域以相反的方向延伸开。
11.一种半导体装置，包括：
半导体管芯，其具有下半导体层和位于所述下半导体层的一部分之上的上半导体层的顶部表面，所述下半导体层和所述上半导体层具有相同的导电性类型，所述下半导体层比所述上半导体层被更重地掺杂，所述半导体管芯具有下触点表面，所述下触点表面包括所述下半导体层的至少一部分；
第一金属层，位于上半导体层之上并在从所述下触点表面向上凸起的多个台中的每一个上形成肖特基结，所述多个台的每个包括所述上半导体层的一部分并形成上触点表面，该上触点表面与由所述多个台中的相邻的台形成的上触点表面被所述下触点表面的一部分分开，所述第一金属层包括沉积在所述上半导体层之上的肖特基金属、沉积在所述肖特基金属之上的势垒金属、以及沉积在所述势垒金属之上的第一金属板；
第二金属层，位于所述第一金属层之上并形成与所述台上的由所述肖特基结形成的肖特基装置中每一个的电触点以形成第一电极接合表面，所述第二金属层包括阳极接合金属；
第三金属层，位于所述下半导体层的一部分之上并构成与其的欧姆触点，所述第三金属层包括沉积在所述下半导体层之上的欧姆金属、沉积在所述欧姆金属之上的势垒金属、以及沉积在所述势垒金属之上的第二金属板；和
第四金属层，位于所述第三金属层之上并形成第二电极接合表面，所述第四金属层包括阴极接合金属。
12.如权利要求11所定义的装置，还包括：
具有第一和第二接合电极的管芯安装支撑物，其中，所述管芯的顶部表面被附着于所述管芯安装支撑物的顶部表面，从而管芯的第一和第二电极接合表面分别形成到第一和第二接合电极的电连接。
13.如权利要求12所定义的装置，其中，通过焊接或者导热环氧树脂，所述管芯被直接附着于管芯安装支撑物。
14.如权利要求11所定义的装置，其中，所述第二和所述第四金属层是可焊接的金属层。
15.如权利要求11所定义的装置，其中，所述第二和所述第四金属层在管芯的顶部表面上形成大体上为矩形的离散的接合区域，每个区域与其它区域被一个电介质材料区域分开。
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