CN1806158A - Measuring apparatus - Google Patents
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- CN1806158A CN1806158A CNA2004800165757A CN200480016575A CN1806158A CN 1806158 A CN1806158 A CN 1806158A CN A2004800165757 A CNA2004800165757 A CN A2004800165757A CN 200480016575 A CN200480016575 A CN 200480016575A CN 1806158 A CN1806158 A CN 1806158A
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N22/00—Investigating or analysing materials by the use of microwaves or radio waves, i.e. electromagnetic waves with a wavelength of one millimetre or more
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
- G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N22/00—Investigating or analysing materials by the use of microwaves or radio waves, i.e. electromagnetic waves with a wavelength of one millimetre or more
- G01N22/02—Investigating the presence of flaws
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
Abstract
The present invention relates to a measuring apparatus for measuring a thickness or the like of a thin film formed on a surface of a substrate such as a semiconductor wafer. The measuring apparatus includes a microwave emission device (40) for emitting a microwave to a substance , a microwave generator (45) for supplying the microwave to the microwave emission device (40), a detector (47) for detecting an amplitude or a phase of the microwave which has been reflected from or passed through the substance, and an analyzer (48) for analyzing a structure of the substance based on the amplitude or the phase of the microwave which has been detected by the detector (47).
Description
Technical field
The present invention relates to a kind of measuring equipment that is used for Measuring Object thickness etc., particularly a kind ofly be used to measure the measuring equipment that is formed on such as film thickness on the substrate surface of semiconductor wafer etc. etc.
Background technology
Along with semiconductor device in recent years becomes more and more highly integrated, circuit interconnection requires thinner, and the number of plies of multilayer interconnection increases.Under this trend, need be such as the substrate surface complanation of semiconductor wafer etc.Specifically be, become thinner with circuit interconnection, the light wavelength of using in photoetching becomes shorter.Have in use under short wavelength's the situation of light, the step height that is allowed at the substrate surface focal zone becomes littler.Therefore, substrate requires very flat surface is arranged so that the step height of focal zone becomes littler.From this viewpoint, adopt chemically mechanical polishing (CMP) process to remove to be formed on rough and uneven in surface on the semiconductor wafer surface usually to obtain flat surface.In the CMP (Chemical Mechanical Polishing) process of being carried out by chemical-mechanical polisher, conduct is with the semiconductor wafer and the polishing pad sliding contact of polished object when polishing liquid is fed into polishing pad.Semiconductor wafer is therefore polished.
In above-mentioned CMP (Chemical Mechanical Polishing) process, after having carried out one period schedule time, polishing process need stop polishing process at predetermined point.For example, be required to be retained in such as on Cu or Al etc. metal interconnected such as the insulation course of SiO2 etc.Such insulation course is known as layer insulation, because the layer such as metal level etc. is formed on the insulation course in subsequent handling.In this case, if insulation course by excessive polishing, metal interconnected may being exposed out below insulation course so.Therefore, polishing process should a predetermined point stop in case making insulation course (layer insulation) be retained in certain thickness metal interconnected on.
Also have another kind of situation, the interconnect groove that be formed on the semiconductor wafer surface in advance, has a predetermined pattern is filled with Cu (or Cu alloy) and remains in lip-deep unwanted Cu layer segment then and is removed by chemically mechanical polishing (CMP) process.When the Cu layer when process is removed, needs selectivity to remove the Cu layer so that the Cu layer only is retained in the interconnect groove from semiconductor wafer by chemically mechanical polishing (CMP).Specifically be that the Cu layer is required by this way from surface removal:, be exposed out such as the insulation course (non-metallic layer) of SiO2 etc. at the position except interconnect groove.
In this case, polish Cu layer and insulation course in the interconnect groove if polishing process exceedingly carries out, it is big that circuitous resistance becomes, and therefore semiconductor device will be scrapped, and cause big loss.Different therewith in addition is, if thereby polishing process fully do not carry out and make the Cu layer be retained on the insulation course, circuit interconnection is not separated from each other, thereby can cause short circuit.The result is that polishing process will re-execute, and therefore manufacturing cost increases.After forming this type of metal level, when adopting CMP (Chemical Mechanical Polishing) process, this problem not only appears under the situation of polishing Cu layer, also appears under the situation of other kind metal levels of polishing such as Al layer etc.
So, usually use before this measuring equipment measurements with optical sensor be formed on the surface, with the thickness of polished insulation course (insulation film) or metal level (metallic film), so that the terminal point of detection CMP (Chemical Mechanical Polishing) process.In this class measuring equipment, when polishing process was carried out, laser beam or white light be by on from the light emitted to the semiconductor wafer, and come the reflected light of insulation film that free semiconductor wafer forms or metallic film measured so that detect the terminal point of polishing process.In the measuring equipment of another kind of type, when polishing process is carried out, luminous ray is by on from the light emitted to the semiconductor wafer, and comes the insulation film that free semiconductor wafer forms or the reflected light of metallic film to adopt light-dividing device analyzed so that detect the terminal point of polishing process.
Yet above-mentioned measuring equipment has following point: if be present between light source and the semiconductor wafer such as the barrier of polishing pad etc., can not reach semiconductor wafer from the laser beam and the luminous ray of light emitted.Therefore, a transmission window such as through hole or transparency window need be set so that laser beam and luminous ray can pass through from that on polishing pad.Consequently, the manufacturing process number of polishing pad increases, and therefore increases as the easy manufacturing cost that consumes the polishing pad of assembly.In addition, in above-mentioned measuring equipment, be unsettled from the luminous ray of semiconductor wafer laser light reflected bundle and reflection.Therefore, be difficult to accurate MEASUREMENTS OF THIN thickness.
Summary of the invention
The present invention considers above-mentioned shortcoming and proposes.Therefore an object of the present invention is to provide the measuring equipment of structure such as the thickness of the accurate Measuring Object of a kind of energy, and the transmission window such as through hole etc. need be set on barrier.
To achieve these goals, according to an aspect of the present invention, provide a kind of measuring equipment, comprising: be used for the microwave launcher of launched microwave to object; Be used for microwave is supplied to the microwave generator of described microwave launcher; Be used to detect from the object reflection or pass the amplitude of microwave of object or the wave detector of phase place; Come the analyzer of object analysis structure with the amplitude or the phase place of the microwave that is used for detecting based on wave detector.
Of the present invention one preferred aspect, analyzer calculates at least one in reflection coefficient, standing-wave ratio (SWR) and the surface impedance.
Of the present invention one preferred aspect, analyzer calculates at least one in thickness, inherent vice, specific inductive capacity, conductivity and the magnetic permeability of object.
According to another aspect of the present invention, provide a kind of by making object sliding contact polishing pad come the polissoir of polishing object, polissoir comprises: the polishing block with described polishing pad; The collar that is used to keep substrate and substrate is pressed against polishing pad; Be used to measure the measuring equipment that is formed on the film thickness on the substrate surface; Wherein, measuring equipment comprise be used for launched microwave to the microwave launcher of film, be used for microwave supply to described microwave launcher microwave generator, be used to detect from the object reflection or pass the amplitude of microwave of object or the wave detector of phase place; With the amplitude of the microwave that is used for detecting or the analyzer that phase place is come MEASUREMENTS OF THIN thickness based on wave detector.
Of the present invention one preferred aspect, a plurality of microwave launchers are set in the collar; On the position that is set at corresponding to the substrate center position in a plurality of microwave launchers; And remaining radially is provided with away from ground, substrate center position along substrate in a plurality of microwave launchers.
Of the present invention one preferred aspect, measuring equipment also comprises eddy current sensor, optical sensor, be used for detecting the friction force detecting device of friction force between polishing pad and the substrate and be used to detect at least one of torque sensor of collar or polishing block moment of torsion.
According to another aspect of the present invention, provide a kind of film forming CVD equipment on substrate surface that is used for, CVD equipment comprises: substrate is arranged on wherein chamber, is used for base feed gas to indoor gas feeder; Be used for the well heater of heated substrate and be used to measure the measuring equipment that is formed on the film thickness on the substrate surface; Wherein, measuring equipment comprise be used for launched microwave to the microwave launcher of film, be used for microwave supply to described microwave launcher microwave generator, be used to detect from the object reflection or pass the amplitude of microwave of object or the wave detector of phase place; With the amplitude of the microwave that is used for detecting or the analyzer that phase place is come MEASUREMENTS OF THIN thickness based on wave detector.
According to another aspect of the present invention, the measuring equipment that provides comprises: be used to launch linearly polarized wave or the circular polarization ripple emitter to object; Be respectively applied at least two receiving traps of reception from the reflected by objects ripple; The polarization state that amplitude that is respectively applied at least two wave detectors of detection of reflected wave amplitude and phase place and is used for detecting based on wave detector or phase place are analyzed reflection wave changes the analyzer with Measuring Object thickness.
Of the present invention one preferred aspect, analyzer is specific inductive capacity, conductivity, magnetic permeability and the refractive index of Measuring Object also.
Of the present invention one preferred aspect, object is multilayer film.
According to another aspect of the present invention, provide a kind of by making the polissoir of object sliding contact polishing pad polishing object, polissoir comprises: the polishing block with described polishing pad; The collar that is used to keep substrate and substrate is pressed against polishing pad; Be used to measure the measuring equipment that is formed on the film thickness on the substrate surface; Wherein, measuring equipment comprise be used to launch linearly polarized wave or circular polarization ripple to the emitter of object, be respectively applied for reception from least two receiving traps of reflected by objects ripple, be respectively applied at least two wave detectors of detection of reflected wave amplitude and phase place and polarization state that the amplitude that is used for detecting based on wave detector or phase place are analyzed reflection wave changes analyzer with Measuring Object thickness.
Of the present invention one preferred aspect, emitter is set in the polishing block.
Of the present invention one preferred aspect, object is multilayer film.
According to the present invention, even barrier (for example polishing pad) is present between the object and microwave launcher as measured target, microwave passes (penetrating) barrier and arrives object (for example substrate).Therefore, transmission window such as through hole etc. need be set on barrier.Consequently, do not need to provide the operation of this class transmission window, and therefore manufacturing cost is lowered.In addition, according to the present invention, the thickness of object etc. can not be subjected to the influence of polishing fluid or analog and accurately be measured.
Description of drawings
Figure 1A is the synoptic diagram that shows according to measuring equipment principle of the present invention;
Figure 1B shows the curve that concerns between reflection wave amplitude and the object thickness;
Fig. 2 shows the cross sectional representation comprise according to the polissoir of the measuring equipment of first embodiment of the invention;
Fig. 3 is the synoptic diagram that shows according to the measuring equipment of first embodiment of the invention;
Fig. 4 A is the schematic plan view of polissoir shown in the displayed map 2;
Fig. 4 B shows the synoptic diagram of semiconductor wafer with polished surface;
Fig. 5 A is the curve that is presented at the time dependent mode of measured value of each regional film thickness of semiconductor wafer surface;
Fig. 5 B is the synoptic diagram that shows the convergence range of measured film thickness value;
Fig. 6 shows the film thickness curve of variation pattern in time;
Fig. 7 A shows the cross sectional representation comprise according to another example of the polissoir of the measuring equipment of first embodiment of the invention;
Fig. 7 B is the cross sectional representation that collar shown in the displayed map 7A amplifies;
Fig. 8 shows the cross sectional representation comprise according to the electropolishing equipment of the measuring equipment of first embodiment of the invention;
Fig. 9 shows the cross sectional representation comprise according to the dry ecthing equipment of the measuring equipment of first embodiment of the invention;
Figure 10 shows the cross sectional representation comprise according to the electroplating device of the measuring equipment of first embodiment of the invention;
Figure 11 shows the cross sectional representation comprise according to the CVD equipment of the measuring equipment of first embodiment of the invention;
Figure 12 shows the cross sectional representation comprise according to the PVD equipment of the measuring equipment of first embodiment of the invention;
Figure 13 is the synoptic diagram that shows the ellipsometry principle; And
Figure 14 shows the synoptic diagram comprise according to the polissoir of the measuring equipment of second embodiment of the invention.
Embodiment
Measuring equipment according to the embodiment of the invention will be described below with reference to the accompanying drawings.Figure 1A is the synoptic diagram that shows according to the measuring equipment principle of first embodiment of the invention.Shown in Figure 1A, when microwave (incident wave) was launched into measured object S, microwave was reflected by object S.Have the amplitude and the phase place that change such as the structure of thickness etc. and physical characteristics from the microwave (reflection wave R hereinafter referred to as) of object S reflection along with object S.Therefore, the amplitude that the structure of object S can be by detection of reflected ripple R and in the phase place at least one and analyzed.The structure of object comprises object thickness, is formed on inherent vice, specific inductive capacity, conductivity and magnetic permeability such as space etc. in the object.
For example, if the thickness of object S is changed by polishing process, electroplating process or other processes, the reflection wave from object S changes along with the thickness of object S so.Similarly, by the amplitude of detection of reflected ripple R, the variation in thickness of object S can be monitored.In this case, if the data that concern between the amplitude of expression object S thickness and reflection wave R are stored in advance, the absolute thickness of object S can be by detection from the amplitude of the reflection wave R of object S and measured.
Microwave is a kind of electromagnetic wave.In the detailed description hereinafter, microwave is defined as having frequency from 300MHz to 300GHz and the electromagnetic wave of wavelength from 1m to 1mm.The information that can read from reflection wave R comprises its amplitude and phase place.In addition, based on amplitude of being read and phase place, may obtain several category informations, such as reflection coefficient (promptly, the ratio of the amplitude of the amplitude of reflection wave R and incident wave I), the body surface impedance (promptly, depend on the impedance of body surface), standing-wave ratio (SWR) (that is, on the transmission line ceiling voltage to the ratio of minimum voltage).If frequency changes to reflection wave R (f+ Δ f) from (f) of incident wave I, it is proportional with the structure such as object thickness etc. that this changes delta f is considered to.Therefore, object structures can be analyzed by the variation of survey frequency.
Then, will the relation that reflect between wave amplitude and the thickness be described with reference to Figure 1B.Figure 1B is the curve that shows measurement result.In this test, microwave is launched on the three class polysilicons with thickness t h1, th2 and th3, and the reflection wave amplitude is measured.In Figure 1B, electric power (dbm) is used to indicate the unit of amplitude.
From the test findings of Figure 1B as can be seen, amplitude is little when polysilicon is thin, and amplitude was big when polysilicon was thick.Test findings shows, has constant relationship between the amplitude of microwave and object thickness.Therefore, the thickness of object can be measured by the amplitude that detects microwave (reflection wave).
The microwave that is transmitted into object is not limited to the microwave with single-frequency.Specifically be, can use the several microwaves that have different frequency respectively, they are applied each other.In addition, can change in time by frequency of utilization modifier frequency.Preferably suitably select the frequency of microwave, so that the structure of object S can accurately be measured according to the type of object.In addition because microwave passes object S, can be not only by detection of reflected ripple R but also by detecting the thickness that the microwave that sees through (that is, passing) object S (below, this microwave is called as transmitted wave P) comes Measuring Object S.
Be to use the advantage of the measuring equipment of microwave below:
(1) air is the suitable media of Transmission Microwave.
(2) employing noncontact of the structure of object and non-failure mode are measured.
(3) measuring distance can be set to long.For example, using the measuring distance of the measuring equipment of microwave is 35mm, and the measuring distance maximum of eddy current sensor is 4mm.Measuring distance is defined in the distance between antenna (that is microwave launcher) and the object.Suitable measuring distance is considered desired measurement sensitivity and is determined.
(4) even have barrier between antenna and object, thereby microwave passes barrier and arrives object.Therefore, transmission window such as through hole etc. need be set on barrier.
(5) common, antenna size is little.Therefore, measuring equipment can be included in the polissoir or in other equipment at an easy rate.
(6) owing on the zonule that is focused by use focus sensor or analog microwave energy on the object, can accurately be measured such as the structure of object thickness.
Then, comprise that the polissoir (chemical-mechanical polisher) according to the measuring equipment of first embodiment of the invention will be described with reference to Figure 2.Fig. 2 shows the cross sectional representation comprise according to the polissoir of the measuring equipment of first embodiment of the invention.
As shown in Figure 2, polissoir comprises polishing block 20, on polishing pad 10 surfaces mounted thereto; With the collar 30 that is used to keep with polished semiconductor wafer (that is, substrate) W, so that press semiconductor wafer W to the upper surface of polishing pad 10.The upper surface of polishing pad 10 contacts with the semiconductor wafer of conduct with polished object as polished surface.The upper surface of fixedly abrasive sheet that comprises the tiny abrasive grains of employing such as adhesive such as resin can be used as polished surface.
Mechanism above adopting, when being rotated, collar 30 can press against on the polishing pad 10 with the semiconductor wafer W that required pressure will remain on its lower surface.Have under the situation of polishing fluid Q between semiconductor wafer and polishing pad 10, the lower surface of semiconductor wafer is polished to plane smooth finish.
Fig. 3 is the synoptic diagram that shows according to the measuring equipment of first embodiment of the invention.As shown in Figure 3, measuring equipment comprises antenna 40 and is connected to the master unit 42 of antenna 40 by waveguide 41.Preferably the length of waveguide 41 is short as far as possible.Antenna 40 and master unit 42 can unitary constructions.Master unit 42 comprise be used to produce microwave and supply with the microwave source 45 of institute's microwave that produces to antenna 40, be used to separate microwave source 45 microwave that produces (incident wave) with from the separation vessel 46 of the microwave (reflection wave) of the surface reflection of semiconductor wafer W, be used to receive reflection wave that separated device 46 separates and detection of reflected wave-amplitude and phase place wave detector 47, be used to rely on the analyzer 48 of the structure that the reflection wave amplitude that is detected device 47 detections and phase place come the analyzing semiconductor wafer.Directional coupler can be preferably used as separation vessel 46.
Reflection wave is transferred to separation vessel 46 by waveguide 41 from antenna 40, and incident wave and reflection wave are separated from each other by separation vessel 46.Separation vessel 46 is connected to wave detector 47, and the reflection wave that separated device 46 separates is transferred to wave detector 47.Wave detector 47 detection of reflected wave amplitude and phase places.Specifically be, the reflection wave amplitude is measured with electric power value (dmb or W) or magnitude of voltage (V), and the phase place of reflection wave detects by the phasometer (not shown) that is combined in the wave detector 47.Be not provided with under the situation of phasometer, have only the reflection wave amplitude can by wave detector 47 detected, or have only reflection wave phase place can by phasometer detected.
In analyzer 48, the thickness that is formed on metallic film on the semiconductor wafer or nonmetal film is analyzed based on the reflection wave amplitude and the phase place that detect by wave detector 47.Control module 50 is connected to analyzer 48.The film thickness that control module 50 obtains based on analyzer 48 detects the terminal point of polishing process.
In order to reduce the diameter of microwave focal spot, the focus sensor that is used for focused microwave can be set to antenna 40.Adopt this layout, be applied zonule on the semiconductor wafer W from the microwave energy of antenna 40 emission on.From measuring the viewpoint of sensitivity, preferably the distance between antenna 40 and the semiconductor wafer W (measuring distance) is short as far as possible.Yet when keeping measuring sensitivity by the output power that increases microwave source 45, measuring distance can be set at longer.
The frequency that is launched into the microwave of semiconductor wafer W is preferably selected according to the kind of object (metallic film or nonmetal film).In this case, a plurality of microwave sources can be set, be used to produce a plurality of microwaves that have different frequency respectively, so that any one is selected the microwave source that is used according to the kind of object.Select as another, microwave source 45 can have the frequency shift device that is used to change microwave frequency.In this case, the frequency shift device can use the function generator that is used to change frequency.
Fig. 4 A is the schematic plan view of polissoir shown in the displayed map 2, Fig. 4 B shows the synoptic diagram of semiconductor wafer with polished surface, Fig. 5 A is the curve that is presented at the time dependent mode of measured value of each regional film thickness of semiconductor wafer surface, and Fig. 5 B is the synoptic diagram that shows the convergence range of measured film thickness value.
In this embodiment, shown in Fig. 4 B, film thickness is measured at five district Z1, Z2, Z3, Z4 and Z5, and one of them district is positioned at the centre of semiconductor wafer W.Shown in Fig. 4 A, collar 30 and polishing block 20 rotate independently of one another.Therefore, when polishing process was carried out, antenna 40 was changed with respect to the position of semiconductor wafer W.Even in this situation, because antenna 40 is positioned at central part bit position corresponding to semiconductor wafer W as shown in Figure 2, polishing block 20 revolves and turns around each time, and antenna 40 inswept predetermined zone just are positioned at the Z3 district in semiconductor wafer W centre.Therefore, just may just be positioned at the thickness of the Z3 district monitoring film in semiconductor wafer W centre, and therefore obtain accurate polishing speed in fixed area.
Shown in Fig. 5 A, along with polishing process carries out, at each district Z1, Z2, Z3, Z4 and Z5, measured value M1, M2, M3, M4 and the M5 of film thickness converge in the certain limit gradually.Shown in Fig. 5 B, in control module 50 (seeing Fig. 2 and Fig. 3), provide upper limit U and lower limit L with respect to the measured value M3 of Z3 district film thickness.When measured value M1, M2, M3, M4 and the M5 of film thickness at district Z1, Z2, Z3, Z4 and Z5 converges in the scope from upper limit U to lower limit L gradually, control module 50 determine with polished film on the whole surface of semiconductor wafer W by uniform polish.Adopt this mode, when polishing process when each measured value M1, M2, M3, M4 and M5 that distinguishes the film thickness of Z1, Z2, Z3, Z4 and Z5 is converged in the preset range stops.Therefore, the surface can be polished plane smooth finish.When the film on the semiconductor wafer W was polished to desired thickness, polishing process Be Controlled unit 50 stopped.
The terminal point of polishing process can detect according to the elapsed time of polishing process.Method according to the elapsed time endpoint detection will be described below.Fig. 6 shows the film thickness curve of variation pattern in time.Fig. 6 has also shown polishing speed.
As shown in Figure 6, when polishing process began the certain hour of (t0), the rate of change of film thickness was very low.Control module 50 (seeing Fig. 2 and Fig. 3) detects this time point (t1) and a basic cycle T1 (t1-t0) is set.Then, use basic cycle T1 and a predetermined coefficient, by such as add, subtract, the arithmetical operation of multiplication and division etc. calculates auxiliary period T 2 (t1-t2).Then, when through the cycle (T1+T2) that will assist period T 2 to be added on the basic cycle T1 to be obtained (t2), control module 50 stops polishing process.
According to this method, even because polishing speed changes the terminal point that is difficult to detect polishing process for a short time, the terminal point of polishing process can be determined by calculating basic cycle T1 and auxiliary period T 2.Top coefficient is preferably according to determining such as the film kind of metallic film or nonmetal film etc.
Thermoregulation mechanism can be set on the polishing block 20, so that regulate the temperature of polishing pad 10.For example, a fluid passage can be formed on the upper surface of polishing block 20, so that high temperature fluid or cryogen supply in the fluid passage.In this case, preferably control module 50 relies on the measured value of measuring equipment acquisition to control the supply of fluid.Adopt this layout, promoted or be suppressed at polishing fluid Q with by the chemical reaction between metal or the nonmetal film of making, thereby can control polishing speed.In addition, the measured value of control module 50 dependence measuring equipments acquisitions can be controlled at the relative velocity between polishing block 20 and the collar 30.
Be preferably in a strain gauge (friction force detecting device) is set on the polishing block 20, be used to measure the friction force between polishing pad 10 and semiconductor wafer W.Select as another, preferably be provided for measuring the torque sensor of the moment of torsion of collar 30 or polishing block 20.In this case, torque sensor preferably can comprise galvanometer, is used to measure the electric current of the motor that supplies to rotation collar 30 or polishing block 20.Usually, when semiconductor wafer was polished the plane, the friction force between polishing pad 10 and semiconductor wafer W diminished.Therefore, if polishing process is stopped after the output valve of strain gauge or torque sensor is reduced to predetermined value, can guarantee the flat surfaces of semiconductor wafer W so.Except that the measuring equipment of present embodiment, eddy current sensor or optical sensor also can be set for measures the metallic film that is formed on the semiconductor wafer.
Fig. 7 A shows the cross sectional representation comprise according to another example of the polissoir of the measuring equipment of first embodiment of the invention, and Fig. 7 B is the cross sectional representation that collar shown in the displayed map 7A amplifies.The assembly of polissoir and operation hereinafter will not described, consistent with the polissoir shown in Fig. 2.
In the polissoir shown in Fig. 7 A, a plurality of antenna 40A, 40B, 40C, 40D and 40E are set in the collar 30, and microwave is launched to semiconductor wafer W from each antenna 40A, 40B, 40C, 40D and 40E.Antenna 40A, 40B, 40C, 40D and 40E are connected respectively to master unit 42 (see figure 2)s.
As shown in Fig. 7 B, antenna 40C is set at the central part bit position corresponding to semiconductor wafer W.It is being the position of " d " from antenna 40C (centre of semiconductor wafer W) distance that antenna 40B and 40D are disposed radially respectively.It is being the position of " d " from antenna 40B and 40D distance that antenna 40A and 40E are disposed radially respectively.Adopt this mode, antenna 40B and 40D and antenna 40A and 40E are disposed in the radially different position along semiconductor wafer W.
Same in the polissoir shown in Fig. 7 A, the thickness of the film on the semiconductor wafer W is measured at five district Z1, Z2, Z3, Z4 and Z5 (seeing Fig. 4 B) by each antenna 40A, 40B, 40C, 40D and 40E.Antenna can both be provided with on collar 30 and polishing block 20.In this case, microwave is by from being arranged on antenna (a plurality of antenna) on collar 30 or the polishing block 20 to semiconductor wafer W emission, and the antenna (a plurality of antenna) that the microwave (transmitted wave) that passes semiconductor wafer W is set at opposite side receives.So, transmission wave amplitude and phase place are detected, thereby the film thickness on the semiconductor wafer W is measured.
The position of antenna is not limited to polishing block 20 and collar 30.For example antenna can be set in the lead ring 33.In this case, measuring equipment can be used as and be used to detect the sensor that semiconductor wafer breaks away from from collar 30.Antenna can radially be set at the outside of polishing block 20.In this case, the term of execution of polishing process or afterwards collar 30 is moved to an extended position, on the part of this place's collar 30 is positioned at position above the periphery of polishing block 20, so microwave is transmitted into semiconductor wafer W with polished lower surface from antenna.
Fig. 8 shows the cross sectional representation comprise according to the electropolishing equipment of the measuring equipment of first embodiment of the invention.As shown in Figure 8, electropolishing equipment comprises and is used to hold the electrolytic tank 101 of electrolytic solution 100 and is arranged on electrolytic tank 101 tops be used for polished surface state is down kept separably the substrate retainer 102 of semiconductor wafer W.Electrolytic tank 101 is towards upper shed and have cylinder form.
Be bumped in the substrate retainer 102 so that microwave is launched from sky alignment semiconductor wafer W according to the antenna 40 of present embodiment.Microwave is formed on the metallic film reflection on the lower surface of semiconductor wafer W.The microwave (reflection wave) of reflection is received by antenna 40 and is sent to master unit 42 by waveguide 41.So, the thickness of metallic film is measured by analyzer 48 (see figure 3)s that are combined on the master unit 42.Control module 50 is connected to master unit 42, and the polishing speed of polishing process is controlled and end point determination relies on analyzer 48 measured film thickness value to carry out by control module 50.The structure of measuring equipment shown in Figure 8 (that is, antenna 40 and master unit 42) is with shown in Figure 3 identical.
The operation of above-mentioned electropolishing equipment will be described below.Electrolytic solution 100 is supplied to the electrolytic tank 101 from electrolyte supply device 111, overflows electrolytic tank 101 up to electrolytic solution 100.When allowing electrolytic solution 100 to overflow electrolytic tank 101, electrolytic tank 101 and polishing tool 105 are rotated together.Substrate retainer 102 attracts with metallic film state down and keeps having semiconductor wafer W such as the metallic film of Cu film etc.In this state, semiconductor wafer W is rotated in the direction opposite with the sense of rotation of electrolytic tank 101 by substrate retainer 102.In the rotation semiconductor wafer W, substrate retainer 102 is moved down makes the lower surface of semiconductor wafer W contact with predetermined pressure with the upper surface of polishing tool 105.At the same time, direct current or pulse current supply between minus plate 104 and the electric contact 108 from rectifier 110.Adopt this mode, the metallic film on the semiconductor wafer W is polished to smooth.In polishing process, the thickness of semiconductor wafer W is measured by measuring equipment, and polishing process is stopped by control module 50 when being polished to desired thickness with convenient metallic film.
Electropolishing equipment shown in Figure 8 can be used to use the ultrapure water electropolishing process of catalyzer.In this case, conductivity is that the ultrapure water of 500 μ s/cm is used alternative electrolyte 100, and ion exchanger is used alternative polishing tool 105.The operation of ultrapure water electropolishing process is identical with above-mentioned electropolishing process.
Fig. 9 shows the cross sectional representation comprise according to the dry ecthing equipment of the measuring equipment of first embodiment of the invention.Dry ecthing equipment comprises vacuum chamber 200, be used to supply with predetermined gas to gas feed unit 201, the vacuum pump 202 of vacuum chamber 200 be connected to the electrode 205 of high frequency electric source 203.In operation, when the vacuum pump 202 that vacuum chamber 200 is used as evacuator was found time, predetermined gas was introduced in the vacuum chamber 200 from gas feed unit 201, so that keep the inside of vacuum chamber 200 to be in predetermined pressure.Under this condition, High frequency power is supplied to electrode 205 from high frequency electric source 203, thereby produces plasma in vacuum chamber 200, therefore carries out the etching that is placed on the semiconductor wafer on the electrode 205.
Figure 10 shows the cross sectional representation comprise according to the electroplating device of the measuring equipment of first embodiment of the invention.As shown in figure 10, electroplating device comprises the electroplating bath 302 of the upward opening with cylinder form, be used for holding therein electroplate liquid 301, with the head (substrate retainer) 306 of vertical moving, it has will be kept the chip bench 304 of semiconductor wafer W by plate surface state down separably.Gland bonnet 308 is configured to cover the upper opening of electroplating bath, thus on electroplate liquid 301 confined space 310 of formation.The vent pipe 312 of confined space 310 by being fixed to gland bonnet 308 communicates with vacuum pump 314 as the mechanism of decompressor, so that the internal pressure of above-mentioned confined space 310 is reduced by driving vacuum pump 314.
Plate-shaped anode 322 is horizontally disposed with and is immersed in 301 li of the electroplate liquids that are contained in the electroplating bath 302.Conductive layer is formed on the lower surface that semiconductor wafer W will be electroplated, and the periphery of conductive layer keeps contacting with negative electrode.In the operation of electroplating process, predetermined voltage is applied between the conductive layer (negative pole) of anode (positive pole) 322 and semiconductor wafer 2, thereby forms electroplated film disk (metallic film) on the surface of the conductive layer of semiconductor wafer W.
The centre of the bottom of electroplating bath 302 is connected to electroplate liquid playpipe 330, and the electroplate liquid playpipe is as the electroplate liquid feed unit that is used to form electrolytic solution 301 upward flows.Electroplate liquid playpipe 330 is supplied with organ pipe 331 by electroplate liquid and is connected to electroplate liquid allotment case 334.Electroplate liquid is supplied with organ pipe 331 and is had operation valve 335, is used for the variable valve top hole pressure.After passing through operation valve 335, electroplate liquid 301 is injected into the electroplating bath 302 from electroplate liquid playpipe 330 with predetermined flow velocity.The top of electroplating bath 302 is used to receive electroplate liquid receiver 332 encirclements of electroplate liquid 301, and electroplate liquid receiver 332 is connected to electroplate liquid allotment case 334 by electroplate liquid recirculatory pipe 336.Valve 337 is set on the electroplate liquid recirculatory pipe 336.
The electroplate liquid 301 overflow plating grooves 302 that are ejected from electroplate liquid playpipe 330.The electroplate liquid 301 of overflow plating groove 302 is received by electroplate liquid receiver 332 and turns back in the electroplate liquid allotment case 334 by electroplate liquid recirculatory pipe 336.In electroplate liquid allotment case 334, the temperature of electroplate liquid 301 is conditioned, and the concentration of electroplate liquid 301 ingredients is with measured and adjustment.Thereafter, electroplate liquid 301 supplies to electroplate liquid playpipe 330 by filtrator 341 by pump 340 from electroplate liquid allotment case 334.
Figure 11 shows the cross sectional representation comprise according to the CVD equipment of the measuring equipment of first embodiment of the invention.As shown in figure 11, CVD equipment comprise chamber 400, be used for base feed gas to the chamber 400 gas supply with 401, be connected to chamber 400 as the vacuum pump 402 of evacuator be used to heat the well heater 403 of semiconductor wafer W.Semiconductor wafer W is placed on the upper surface of well heater 403.
Supplying with 401 as the unstrpped gas of deposition feedstock from gas is fed into the chamber 400.Simultaneously, semiconductor wafer W is heated by well heater 403.Thereby excitation energy is applied on the unstrpped gas, thereby and product (film) be deposited on the upper surface of semiconductor wafer W.The secondary product that produces in the product deposition process 400 is drawn out of from the chamber by vacuum pump 402.
Figure 12 shows the cross sectional representation comprise according to the PVD equipment of the measuring equipment of first embodiment of the invention.As shown in figure 12, PVD equipment comprise chamber 500, be arranged on target (negative electrode) 501 in the chamber 500, be arranged in the face of target 501 substrate retainer (anode) 502, be used between target 501 and substrate retainer 502, applying voltage power supply 503, be used to supply with argon gas to the chamber 500 gas feed unit 504 and be connected to the vacuum pump 502 of chamber 500 as evacuator.Semiconductor wafer W is placed on the upper surface of substrate retainer 502.
Find time by vacuum pump 505 in chamber 500, so that produce high vacuum in chamber 500.Simultaneously, argon gas is fed into the chamber 500 from gas feed unit 504.When between target 501 and substrate retainer 502, applying voltage, because the electric field argon gas is converted into plasma state by power supply 503.Thereby argon ion is quickened bump target 501 by electric field.The metallic atom of forming target 501 is deposited on the upper surface of the semiconductor wafer W that faces target 501 by the metallic atom of argon ion sputtering and sputter, thereby forms film on the upper surface of semiconductor wafer W.
Then, will measuring method and the measuring equipment that use ellipsometry be described.
Ellipsometry is by analyzing a kind of method from reflected by objects wave polarization state variation Measuring Object thickness, specific inductive capacity, magnetic permeability, conductivity, refractive index etc.The principle of ellipsometry will be described below with reference to Figure 13.As shown in figure 13, when such as the electromagnetic wave oblique incidence of light beam etc. when measured object S is gone up, electromagnetic wave is reflected by object S.Plane of incidence is defined as being incorporated into the plane of ejected wave I and reflection wave R.Be used as at linearly polarized wave under the situation of incident wave I, the electric field intensity E of linearly polarized wave can be broken down into the P component (that is P polarization) that is parallel to plane of incidence and perpendicular to the S component (that is S polarization) of plane of incidence.Therefore linearly polarized wave is reflected by object S, and amplitude and phase place change between P polarization and S polarization.The result is that linearly polarized wave is changed into oval polarized wave as shown in figure 13.The variation pattern of amplitude and phase place (that is the variation of polarization state) is according to the characteristic (structure) of object S and difference.Therefore, the thickness of object S, refractive index etc. can be measured by the variation of analyzing polarization state.
Be to use the advantage of the measuring equipment of ellipsometry below:
Therefore (i) can be metal or nonmetallic materials with object being measured, and not need to replace measuring equipment with another according to the type of object.
(ii) above-mentioned measuring equipment is being included under the situation that is used for MEASUREMENTS OF THIN thickness in the chemical-mechanical polisher, need on polishing pad, through hole be set so that light beam therefrom passes through.Therefore, measuring equipment is to not influence of polishing process.
If (iii) the linear polarization wave amplitude is modulated, Measuring Time can be minimized to for example 1msec so.
(iv) since without laser as wave source, the maintenance of measuring equipment is easy to.
Then, the measuring method and the measuring equipment of second embodiment of the invention will be described in detail.
In this embodiment, microwave is used as and will be transmitted into the electromagnetic wave of object.Preferably, frequency of utilization 30 to 300GHz scope and wavelength at 10 millimeter waves to the 1mm scope.In addition, in order to improve the S/N ratio and to carry out fast and measure, preferably use the electromagnetic wave of modulated amplitude.In this embodiment, with the electromagnetic wave that is launched into object be linearly polarized wave or the circular polarization ripple that object is arrived in oblique incidence.Using under the situation of linearly polarized wave, the direction of its electric field intensity is with respect to perpendicular to the plane of plane of incidence in the clockwise direction or the 45 that counterclockwise tilts.
Usually, in ellipsometry, the reception wave detector that is used to receive reflection wave (promptly, one cover receives antenna and wave detector) around it self axis from the position angle 0 ° to 360 ° rotate off and on 2 ° of increments so that reflection wave is that oval polarization wave amplitude and phase place are detected at each orientation (position angle).Yet this method needs a lot of times to be used for measuring.Therefore, present embodiment uses two respectively with 0 ° and 45 ° of reception wave detectors that the position angle is fixed on the throne.Receiving wave detector has high polarization correlated.Adopt this layout, its vector of oval polarized wave is received by two reception wave detectors with 0 ° of linear polarization component of pointing to 45.After receiving oval polarized wave, mode was calculated below the ratio of the reflection coefficient of the P polarization of oval polarized wave and the reflection coefficient of S polarization adopted:
The reflection R of P polarization
pProvide by formula (1).
R
P＝|R
P|·exp(j·φ
P)…(1)
The reflection R of S polarization
sProvide by formula (2).
R
S＝|R
S|·exp(j·φ
S)…(2)
The reflection R of P polarization
pReflection R to the S polarization
sRatio limit by formula (3).
R
P/R
S＝|R
P/R
S|·exp(j·(φ
P-φ
S))…(3)
≡tanψ·exp(jΔ)
Tan ψ: amplitude ratio Δ: phase differential
By this way, the reflection R of P polarization
pReflection R with the S polarization
sRatio can pass through the expression of ψ (psi) and Δ (delta).ψ and Δ are by incident angle, determine measured object body thickness etc.Therefore, the thickness of object, specific inductive capacity, magnetic permeability, conductivity, refractive index etc. can rely on contrary ψ value of estimating and Δ value with measured.
Then, will measuring equipment according to second embodiment be described with reference to Figure 14.Figure 14 is the synoptic diagram that shows according to the measuring equipment of second embodiment of the invention.This embodiment has shown that a measuring equipment is incorporated into the example on the chemical-mechanical polisher.The assembly of the chemical-mechanical polisher of this embodiment and operation below will not described, and they are identical with polissoir shown in Figure 2.
As shown in figure 14, measuring equipment comprises Millimeter-Wave Source 60, be used to modulate the amplitude modulaor 61 of millimeter wave amplitude, be used for millimeter wave is converted to the polarizer 62 of linearly polarized wave, be used for linearly polarized wave is transmitted into emitting antenna 63 (emitter) on the semiconductor wafer W, two receiving antenna 64A and 64B that are used to receive the oval polarized wave that is reflected by semiconductor wafer W, two wave detector 65A and 65B that are connected respectively to receiving antenna 64A and 64B, be used to amplify prime amplifier 66 from the signal of wave detector 65A and 65B transmission, be used for detecting the lock-in amplifier 67 of prearranged signals from signal with noise, swivel adapter head 70 and be used for by analyzing and testing to signal measure the analyzer 71 of the thickness etc. of semiconductor wafer W.
Emitting antenna 63 is set in the polishing block 20, and is arranged on the central part bit position near the semiconductor wafer W that is kept by collar 30.Linearly polarized wave (that is millimeter wave) is with the centre emission of vergence direction semiconductor wafer W on 10 from emitting antenna 63 towards polishing pad.The linearly polarized wave oblique incidence is also passed through the centre that polishing pad 10 arrives semiconductor wafer W to polishing pad 10.With measured target (object) is polishing pad 10 and the multilayer film that comprise laminar film that are formed on the semiconductor wafer W lower surface.The example of measured film is comprised SiO
2Or the insulation film of polysilicon, the metallic film of Cu or W (tungsten), the barrier film of Ti, TiN, Ta or TaN.
Millimeter-Wave Source 60 can comprise the combination of Gunn oscillator or Gunn oscillator and multiplier.Another selection is that the combination of microwave oscillator and multiplier can be used as Millimeter-Wave Source 60.Polarizer 62 can comprise having polarization correlated waveguide.In order to improve the directivity of the linearly polarized wave that will be launched into semiconductor wafer W, preferably use pyramidal horn (antenna) as emitting antenna 63.Under the situation of using circular polarization ripple instead of linear polarized wave, conical horn antenna is used as receiving antenna 64A and 64B.Wave detector 65A and 65B can comprise the combination of Schottky barrier beam Read diode or frequency mixer and Schottky barrier beam Read diode.
With the millimeter wave that is launched into semiconductor wafer W is linearly polarized wave.If the X-axis (not shown) is defined as the direction perpendicular to the plane of incidence that is incorporated into ejected wave and reflection wave, the electric field intensity of linearly polarized wave is with respect to the 45 that tilts in the clockwise direction or counterclockwise perpendicular to the X-axis in the plane of the direction of propagation.The circular polarization ripple can be used as and will be transmitted into the millimeter wave of semiconductor wafer W.In this case, circular polarisers is used to replace above-mentioned polarizer 62.
Linearly polarized wave is tilted from single emitting antenna 63 and is transmitted into semiconductor wafer W, is used as the surface of measurement target and each boundary reflection of multilayer film then.Reflection wave from semiconductor wafer W is received by two receiving antenna 64A and 64B.These two receiving antenna 64A and 64B become the position angle of 0 ° and 45 ° to tilt respectively with respect to X-axis, so as the linear polarization component of oval polarized wave at the position angle of 0 ° and 45 ° by two wave detector 65A and 65B detection.Adopt this layout with two receiving antenna 64A and 64B and two wave detector 65A and 65B, the phase difference between the ratio Ψ of the amplitude of the amplitude of P polarization and S polarization and P polarization and the S polarization is detected in polishing process simultaneously.Detected signal is sent to analyzer 71 via prime amplifier 66, lock-in amplifier 67 and swivel adapter head 70.Analyzer 71 uses Newton method for example to calculate film thickness on the semiconductor wafer W according to ψ value and Δ value.Control module 50 (Fig. 2) utilizes the index relevant with film thickness to detect the terminal point of polishing process.
Adopt this mode, polishing pad 10 reduce and be formed on film on the semiconductor wafer W such as oxide film and metallic film etc. reduce can be by detecting the P polarization simultaneously amplitude and the ratio Ψ of the amplitude of S polarization and the phase difference between P polarization and the S polarization measure.In addition, the precision when detected parameters Ψ and Δ can improve by using fixing two receiving antenna 64A on the throne and 64B.Four receiving antennas can use by this way: four receiving antennas become the position angle of 90 °, 45 °, 0 ° and-45 ° to tilt respectively.Equally in this case, four wave detectors are connected to four receiving antennas respectively.Adopt this layout with four receiving antennas and four wave detectors, because differential detection comprises that the common mode component of common-mode noise is suppressed, and therefore the S/N ratio is enhanced.In addition, differential output can by and signal segmentation, make the fluctuation of reflectivity of the fluctuation of electromagnetic intensity and semiconductor wafer W be eliminated.
As mentioned above, by analyzing from variation with the polarization state of the reflection wave of object being measured because the amounts of thickness variation of polishing (finishing) polishing pad 10, can be in polishing process as the amounts of thickness variation of the amounts of thickness variation of the oxide film of insulator and metallic film with measured.In this embodiment, polishing pad 10 is one of objects with measured.Because polishing pad 10 is made by isocyanurate foam usually, the millimeter wave energy is transmitted by polishing pad 10.Therefore, can measure the thickness of the multilayer film that exceed polishing pad 10.The measuring equipment energy measurement of this embodiment is such as SiO
2Or the insulation film of polysilicon, the metallic film of Cu or W (tungsten), the thickness of the several types film of the barrier film of Ti, TiN, Ta or TaN.For example, be that as long as the thickness of Cu film is not more than 225nm with regard to its thickness of energy measurement, its thickness is provided by following formula under the situation of millimeter wave of 100GHz in frequency of utilization:
f＝100GHz，σ＝5×10
7S/m(@Cu)
μ: magnetic permeability σ: conductivity
As long as the thickness of Cu film is not more than 30nm, traditional optical measuring apparatus is with regard to its thickness of energy measurement.Yet along with semiconductor fabrication process carries out, the thickness of whole multilayer film increases.Therefore,, require to measure the thickness of these type of multilayer film in order to control polishing process, big even its thickness becomes.In this regard, the measuring equipment of this embodiment has advantage than traditional optical measuring apparatus.
Not only can be applied to polissoir according to measuring equipment of the present invention, can also be applied to electroplating device, CVD equipment, PVD equipment and be used for forming or the similar devices of deposition such as metallic film or nonmetal film on the surface of semiconductor wafer.
According to the present invention, the structure of object can be measured by using a kind of brand-new new technology.Particularly, energy measurement is formed on the metallic film such as Cu, Al, Au and W etc. on the semiconductor wafer, such as SiO
2Following barrier film, such as the barrier film of Ta, TaN, Ti, TiN and WN, such as SiO
2Oxide film, polysilicon, BPSG (boron phosphate silicate glass) film, tetraethoxysilane film etc.In addition, when carrying out polishing process because the terminal point of polishing process can accurately be detected (online), than film thickness be after polishing process stops with measured traditional measurement method (off-line), the sum of procedure of processing can be reduced.In addition, be used for polishing and have operation such as the chemical-mechanical polisher of the substrate of the film of shallow trench insulation (STI), layer insulation (ILD or IMD), Cu or W, and in the operation of electroplating device that is used to form these films and CVD equipment, can detect the terminal point of the performed any process of the said equipment.
As mentioned above, according to the present invention, even barrier (for example polishing pad) as between the object and emitter with measured target, microwave is by (penetrating) barrier arrival object (for example substrate).Therefore, transmission window such as through hole etc. need be set on barrier.Consequently, do not need to provide the operation of this class transmission window, and therefore manufacturing cost reduces.In addition, according to the present invention, the thickness of object etc. is not accurately measured by the influence of polishing fluid or analog can.
Commercial Application
It is thick that the present invention can be applicable to the object measured such as being formed on the film on the semiconductor wafer surface The measurement device of degree etc.
Claims (13)
1, a kind of measuring equipment comprises:
Be used for the microwave launcher of launched microwave to object;
Be used for microwave is supplied to the microwave generator of described microwave launcher;
Be used to detect from the object reflection or pass the amplitude of microwave of object or the wave detector of phase place; With
The amplitude or the phase place that are used for the microwave that detected based on described wave detector are come the analyzer of object analysis structure.
2, measuring equipment as claimed in claim 1 is characterized in that, described analyzer calculates at least one in reflection coefficient, standing-wave ratio (SWR) and the surface impedance.
3, measuring equipment as claimed in claim 1 is characterized in that, at least one in thickness, inherent vice, specific inductive capacity, conductivity and the magnetic permeability of described analyzer calculating object.
4, a kind of being used for by making substrate and polishing pad sliding contact come the polissoir of polishing substrate, described polissoir comprises:
Polishing block with described polishing pad;
The collar that is used to keep substrate and substrate is pressed against polishing pad; With
Be used to measure the measuring equipment that is formed on the film thickness on the substrate surface;
Wherein, described measuring equipment comprise be used for launched microwave to the microwave launcher of described film, be used for microwave supply to described microwave launcher microwave generator, be used to detect from the wave detector of the amplitude of film reflection or the microwave by film or phase place and the amplitude of the microwave that is used for having detected or the analyzer that phase place is measured described film thickness based on described wave detector.
5, polissoir as claimed in claim 4 is characterized in that,
A plurality of described microwave launchers are set in the described collar;
On the position that is set at corresponding to the substrate center position in described a plurality of microwave launcher; With
Remaining radially is provided with away from the substrate center position along substrate in described a plurality of described microwave launcher.
6, polissoir as claimed in claim 4, it is characterized in that at least one of torque sensor that also comprises eddy current sensor, optical sensor, is used for detecting the friction force detecting device of friction force between described polishing pad and the described substrate and is used to detect described collar or described polishing block moment of torsion.
7, a kind ofly be used for film forming CVD equipment on substrate surface, described CVD equipment comprises:
Substrate is arranged on chamber wherein;
Be used for the gas feeder of base feed gas to described chamber;
The well heater that is used for heated substrate; With
Be used to measure the measuring equipment that is formed on the film thickness on the substrate surface;
Wherein, described measuring equipment comprise be used for launched microwave to the microwave launcher of described film, be used for microwave supply to described microwave launcher microwave generator, be used to detect from the wave detector of the amplitude of film reflection or the microwave by film or phase place and the amplitude of the microwave that is used for having detected or the analyzer that phase place is measured described film thickness based on described wave detector.
8, a kind of measuring equipment comprises:
Be used to launch linearly polarized wave or circular polarization ripple emitter to object;
Be respectively applied at least two receiving traps of reception from the reflected by objects ripple;
Be respectively applied at least two wave detectors of detection of reflected wave amplitude and phase place; With
Be used for the amplitude of the microwave that detected based on described wave detector or polarization state that phase place is analyzed reflection wave and change analyzer with Measuring Object thickness.
9, measuring equipment as claimed in claim 8 is characterized in that, described analyzer is specific inductive capacity, conductivity, magnetic permeability and the refractive index of Measuring Object also.
10, measuring equipment as claimed in claim 8 is characterized in that, object is multilayer film.
11, a kind of being used for by making substrate and polishing pad sliding contact come the polissoir of polishing substrate, described polissoir comprises:
Polishing block with described polishing pad;
Be used for fixing substrate and press the collar of substrate to polishing pad; With
Be used to measure the measuring equipment that is formed on the object thickness on the substrate surface;
Wherein, described measuring equipment comprise be used to launch linearly polarized wave or circular polarization ripple to the emitter of object, be respectively applied for reception from least two receiving traps of reflected by objects ripple, be respectively applied at least two wave detectors of detection of reflected wave amplitude and phase place and the amplitude of the microwave that is used for having detected based on described wave detector or polarization state that phase place is analyzed reflection wave change analyzer with Measuring Object thickness.
12, polissoir as claimed in claim 11 is characterized in that, described emitter is set in the described polishing block.
13, polissoir as claimed in claim 11 is characterized in that, object is multilayer film.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003169983 | 2003-06-13 | ||
| JP169983/2003 | 2003-06-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1806158A true CN1806158A (en) | 2006-07-19 |
Family
ID=33549396
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2004800165757A Pending CN1806158A (en) | 2003-06-13 | 2004-06-10 | Measuring apparatus |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20060164104A1 (en) |
| EP (1) | EP1634036A4 (en) |
| JP (1) | JP2007528585A (en) |
| KR (1) | KR20060009387A (en) |
| CN (1) | CN1806158A (en) |
| TW (1) | TWI238240B (en) |
| WO (1) | WO2004111572A1 (en) |
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- 2004-06-10 KR KR1020057023486A patent/KR20060009387A/en not_active Application Discontinuation
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- 2004-06-10 JP JP2006516836A patent/JP2007528585A/en not_active Abandoned
- 2004-06-10 US US10/559,476 patent/US20060164104A1/en not_active Abandoned
- 2004-06-10 CN CNA2004800165757A patent/CN1806158A/en active Pending
- 2004-06-10 WO PCT/JP2004/008467 patent/WO2004111572A1/en not_active Application Discontinuation
- 2004-06-11 TW TW093116796A patent/TWI238240B/en not_active IP Right Cessation
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Also Published As
| Publication number | Publication date |
|---|---|
| EP1634036A1 (en) | 2006-03-15 |
| EP1634036A4 (en) | 2007-08-01 |
| TW200504330A (en) | 2005-02-01 |
| US20060164104A1 (en) | 2006-07-27 |
| TWI238240B (en) | 2005-08-21 |
| JP2007528585A (en) | 2007-10-11 |
| WO2004111572A1 (en) | 2004-12-23 |
| KR20060009387A (en) | 2006-01-31 |
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