CN106596581B - The method for measuring surface profile measurement plural layers inter-layer intra defect - Google Patents
The method for measuring surface profile measurement plural layers inter-layer intra defect Download PDFInfo
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- CN106596581B CN106596581B CN201611016108.5A CN201611016108A CN106596581B CN 106596581 B CN106596581 B CN 106596581B CN 201611016108 A CN201611016108 A CN 201611016108A CN 106596581 B CN106596581 B CN 106596581B
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- 238000005259 measurement Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 26
- 230000007547 defect Effects 0.000 title claims abstract description 22
- 239000010410 layer Substances 0.000 title claims abstract description 17
- 239000011229 interlayer Substances 0.000 title claims abstract description 16
- 238000012360 testing method Methods 0.000 claims abstract description 18
- 238000001514 detection method Methods 0.000 claims abstract description 11
- 230000032683 aging Effects 0.000 claims abstract description 6
- 238000012876 topography Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 6
- 230000002950 deficient Effects 0.000 claims description 4
- 230000005284 excitation Effects 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000004377 microelectronic Methods 0.000 abstract description 7
- 239000010409 thin film Substances 0.000 abstract description 4
- 230000001066 destructive effect Effects 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract description 2
- 238000012545 processing Methods 0.000 abstract description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000032798 delamination Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/8422—Investigating thin films, e.g. matrix isolation method
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/8422—Investigating thin films, e.g. matrix isolation method
- G01N2021/8438—Mutilayers
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Mathematical Physics (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
Abstract
The invention discloses a kind of methods for measuring surface profile measurement plural layers inter-layer intra defect, belong to microelectronics and Microelectron-machine technical field.In order to solve the problems, such as the preparation of the devices such as existing thin-film device, microelectronics, microelectron-mechanical, need destructive processing, time-consuming length, at high cost etc. in detection process, the present invention provides a kind of method for measuring surface profile measurement plural layers inter-layer intra defect, the phenomenon that pattern variation caused by occurring using film surface before and after aging, thermal cycle or mechanical cycles as internal flaw, identifies position and the size of defect.This method has the characteristics that quick, lossless, real-time, testing cost is low, it is applied to the information electronic manufacturing field such as microelectronics, microelectron-mechanical, manufacturing cost, testing cost can be made to be greatly reduced, quality is improved, and the manufacturing field in these fields and similar structures has broad application prospects.
Description
Technical field
The invention belongs to microelectronics and Microelectron-machine technical fields, are related to a kind of novel defect inspection method,
More particularly to a kind of method for measuring surface profile measurement plural layers inter-layer intra defect.
Background technique
Plural layers are thin-film device, microelectronic component, microelectron-mechanical (MEMS) etc. in information electronic manufacturing field
Basic structure.Its main feature is that passing through vapor deposition by bilayer or multilayer film and thin substrate, sputtering, chemical deposition, spin coating, gluing
It the techniques such as connects to be made.It will appear tiny flaw between film and film for various reasons during the preparation process, such as bubble, delamination, split
Line, slag inclusion, foreign matter etc..In order to control the quality of plural layers, guarantees the firm connection of interlayer, need to detect defect at any time
Appearance and pattern, with adjusting process at any time；In addition, needing to carry out the survey such as heat ageing, mechanical cycles for the reliability of assessment device
Examination, it is also desirable to detect the generation and expansion of the internal flaw of interlayer at any time.Currently, this detection is all destructive, such as with
When sampling, slice, be then observed on electron microscope.This detection method is time-consuming, laborious, and cost is very high.
Summary of the invention
It prepared to solve the devices such as existing thin-film device, microelectronics, microelectron-mechanical, need destructiveness in detection process
The problem of processing, time-consuming length, at high cost etc., the present invention provides a kind of measurement surface profile measurement plural layers inter-layer intras to lack
Sunken method, pattern caused by occurring using film surface before and after aging, thermal cycle or mechanical cycles as internal flaw become
The phenomenon that change, identifies position and the size of defect.This method has the characteristics that quick, lossless, real-time, testing cost is low, by it
Applied to the information electronic manufacturing field such as microelectronics, microelectron-mechanical, manufacturing cost, testing cost can be made to be greatly reduced, matter
Amount is improved, and the manufacturing field in these fields and similar structures has broad application prospects.
The purpose of the present invention is what is be achieved through the following technical solutions:
A method of measurement surface profile measurement plural layers inter-layer intra defect includes the following steps:
One, detected member is placed on low-temperature heat platform, surface profile measurement device is located above detected member, note
Detected member is recorded in the placement location of low-temperature heat platform；
Two, adjust surface profile measurement device parameters and record, in this, as reference parameter to detected member into
Row detection；
Three, setting low-temperature heat platform is room temperature, measures the surface topography and record of detected member；
Four, low-temperature heat platform heated at constant temperature is set, measures the surface topography and record of detected member, is closed after test low
Warm heating platform is allowed to be cooled to room temperature；
Five, aging, thermal cycle or mechanical cycles are carried out to detected member and tests defined time or number；
Six, the detected member after test is placed on the placement location of step 1 record；
Seven, setting low-temperature heat platform is room temperature, is detected and is recorded to detected member；
Eight, setting low-temperature heat platform heated at constant temperature is identical as the temperature of step 4, detects to detected member
And it records；
Nine, basis is Step 3: Step 4: Step 7: four surface topography deformation differences detected in step 8, utilize meter
Calculation machine is calculated, and judges whether the position that defective generation and defect generate.
Ten, step 3~nine are repeated, until completing burn-in test.
The present invention overcomes the deficiencies in the prior art, and it is thin to propose a kind of novel utilization surface profile measurement device detection
The method of defect under film, this method do not need to be machined test specimen and destroyed, and detect rapidly, visual result, also
Thermal cycle experiment, mechanical experiment and detection process can be carried out simultaneously.Compared with the prior art, effect is had the following advantages that:
1, not damaged to detected member using surface profile measurement device.
2, without destroying detected member, experimental cost is saved.
3, swift to operate, it is at low cost.
4, without using radioactivity x-ray.
5, swift to operate without ultrasound.
6, only optical device can be realized, and threshold is low.
7, low-temperature operation guarantees that measuring device accuracy is constant.
8, sightless internal flaw is detected.
Detailed description of the invention
Fig. 1 is the schematic illustration of non-destructive testing；
Fig. 2 is flawless detected member detection schematic diagram；
Fig. 3 is defective detected member detection schematic diagram；
In figure: 1- surface profile measurement device, 2- low-temperature heat platform, 3- detected member, 4- computer.
Specific embodiment
Further description of the technical solution of the present invention with reference to the accompanying drawing, and however, it is not limited to this, all to this
Inventive technique scheme is modified or replaced equivalently, and without departing from the spirit and scope of the technical solution of the present invention, should all be covered
Within the protection scope of the present invention.
Specific embodiment 1: as shown in Figure 1, present embodiments provide for a kind of measurement surface profile measurement plural layers
The device of inter-layer intra defect, the device include surface profile measurement device 1, low-temperature heat platform 2, detected member 3 and calculate
Machine 4, specific detecting step are as follows:
One, detected member 3 is placed on low-temperature heat platform 2, surface profile measurement device 1 is located in detected member 3
Side, placement location of the record detected member 3 in low-temperature heat platform；
Two, the parameters and record for adjusting surface profile measurement device 1, in this, as reference parameter to detected member 3
It is detected；
Three, setting low-temperature heat platform 2 is room temperature, measures the surface topography and record of detected member 3；
Four, 2 heated at constant temperature of low-temperature heat platform is set, measures the surface topography and record of detected member 3, is closed after test
Low-temperature heat platform 2 is allowed to be cooled to room temperature；
Five, time or number as defined in the burn-in tests such as aging, thermal cycle or mechanical cycles are carried out to detected member 3；
Six, the detected member 3 after test is placed on the placement location of step 1 record；
Seven, setting low-temperature heat platform 2 is room temperature, is detected and is recorded to detected member, at room temperature detected member 3
Pattern is as shown in Figure 2；
Eight, setting 3 heated at constant temperature of low-temperature heat platform is identical as the temperature of step 4, detects to detected member
And record, the variation of 3 pattern of detected member is as shown in Figure 3 when heating；
Nine, basis is Step 3: Step 4: Step 7: four surface topography deformation differences detected in step 8, utilize meter
Calculation machine 4 is calculated, and judges whether the position that defective generation and defect generate.
Ten, step 3~nine are repeated, until completing the burn-in tests such as thermal cycle, mechanical cycles.
In present embodiment, during the step 1 carries out, it can be demarcated in the specific position of detected member, to ensure
The data collection zone domain detected every time is same position.
In present embodiment, during the step 1 carries out, the accuracy of temperature control of low-temperature heat platform is at 0.1 DEG C, temperature
1 DEG C/s of the rate of heat addition, operating temperature should be lower than the regulation environment temperature of surface profile measurement device, generally at 40 ~ 50 DEG C.
In present embodiment, during the step 5 carries out, appropriate adjustment measurement ginseng can be changed according to surface smoothness
Number.
In present embodiment, during the step 6 carries out, it can be put below detected member in equipment claimed range
Heating device is set, becomes apparent from the deformation of blemish surface by thermal expansion deformation.
In present embodiment, it is described Step 3: four, seven and eight carry out during, can surface profile measurement device 1 and by
Transparent thermal insulation plate is placed between detection piece 3, to protect surface profile measurement device 1, it is ensured that accuracy is not by environment temperature shadow
It rings.
In present embodiment, during the step 4 and eight progress, the sustainable heated at constant temperature of low-temperature heat platform 2,
It can provide pulse excitation heating.
In present embodiment, the detected member has the double-deck and double-deck above film.
Working principle is as follows:
When based on delamination, bubble, crackle occurring between plural layers, the flatness of surface film will receive influence, Huo Zhe
Surface occurs raised or sunken.A degree of deformation is had when detected member is heated to occur, blemish surface film
Deformation, protrusion and recess can then aggravate, and surface profile measurement device is allowed more easily to measure deformation.It therefore, can basis
The difference of the degree of deformation and protrusion calculates position and the size of defect.
Specific embodiment 2: present embodiments provide for a kind of measurement surface profile measurement plural layers inter-layer intras to lack
Sunken method, specific implementation step are as follows:
One, detected member is made of nickel film and substrate；
Two, it is measured using optics 3D surface profile measurement device, parameters require as follows: 5 times of object lens, 1.76
1.76 μm of pixel sizes of μ m, 410nm vertical resolution, 2.2 μm of lateral resolutions, camera lens ambient temperature requirements are 45 DEG C；
Three, detected member is placed on low-temperature heat platform, surface profile measurement device is located above detected member, note
Detected member is recorded in the placement location of low-temperature heat platform；
Four, setting low-temperature heat platform is room temperature, measures detected member surface 3D pattern using surface profile measurement device；
Five, low-temperature heat platform provides 40 DEG C of heated at constant temperature, measures detected member surface using surface profile measurement device
3D pattern；
Six, low-temperature heat platform is closed to be allowed to be cooled to room temperature；
Seven, -50 (1 hours) ~ 150 DEG C of (1 hour) thermal shock experiments are carried out to detected member, recycled 5 times；
Eight, setting low-temperature heat platform is room temperature, detected member is placed on the placement location of step 3 record, measurement
The surface topography of detected member；
Nine, low-temperature heat platform is adjusted to 40 DEG C, measures the surface topography of detected member；
Ten, by computer, the deformation data before and after thermal shock test is compared into calculating, extrapolates the position of defect
And size.
In present embodiment, specimen material uses nickel film, and in practical applications, material is also possible to other metals
Or nonmetal film.
In present embodiment, nickel thin-film material with a thickness of 20 μm, in practical applications, the thickness of tested film can change
Become.
In present embodiment, baseplate material uses silicon substrate, and in practical applications, measured base plate is also possible to other
Semiconductor substrate.
In present embodiment, baseplate material with a thickness of 1000 μm, in practical applications, measured base plate thickness can change
Become.
Claims (5)
1. a kind of method for measuring surface profile measurement plural layers inter-layer intra defect, it is characterised in that the method step is such as
Under:
One, detected member is placed on low-temperature heat platform, surface profile measurement device is located above detected member, records quilt
Placement location of the detection piece in low-temperature heat platform；
Two, the parameters and record for adjusting surface profile measurement device, examine detected member in this, as reference parameter
It surveys；
Three, setting low-temperature heat platform is room temperature, measures the surface topography and record of detected member；
Four, low-temperature heat platform heated at constant temperature is set, the surface topography and record of detected member are measured, low temperature is closed after test and is added
Hot platform is allowed to be cooled to room temperature；
Five, aging, thermal cycle or mechanical cycles are carried out to detected member and tests defined time or number；
Six, the detected member after test is placed on the placement location of step 1 record；
Seven, setting low-temperature heat platform is room temperature, is detected and is recorded to detected member；
Eight, setting low-temperature heat platform heated at constant temperature is identical as the temperature of step 4, is detected and is remembered to detected member
Record；
Nine, basis is Step 3: Step 4: Step 7: four surface topography deformation differences detected in step 8, utilize computer
It is calculated, judges whether the position that defective generation and defect generate；
Ten, step 3~nine are repeated, until completing burn-in test.
2. the method for measurement surface profile measurement plural layers inter-layer intra defect according to claim 1, feature exist
In the low-temperature heat platform accuracy of temperature control at 0.1 DEG C, 1 DEG C/s of heating temperature, operating temperature is at 40 ~ 50 DEG C.
3. the method for measurement surface profile measurement plural layers inter-layer intra defect according to claim 1, feature exist
In described Step 3: placing transparent thermal insulation between surface profile measurement device and detected member during four, seven and eight progress
Plate.
4. the method for measurement surface profile measurement plural layers inter-layer intra defect according to claim 1, feature exist
During the step 4 and eight carry out, low-temperature heat platform is to continue heated at constant temperature or pulse excitation heating.
5. the method for measurement surface profile measurement plural layers inter-layer intra defect according to claim 1, feature exist
There is the double-deck and double-deck above film in the detected member.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611016108.5A CN106596581B (en) | 2016-11-18 | 2016-11-18 | The method for measuring surface profile measurement plural layers inter-layer intra defect |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611016108.5A CN106596581B (en) | 2016-11-18 | 2016-11-18 | The method for measuring surface profile measurement plural layers inter-layer intra defect |
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| CN106596581A CN106596581A (en) | 2017-04-26 |
| CN106596581B true CN106596581B (en) | 2019-04-30 |
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| CN111952210A (en) * | 2019-05-15 | 2020-11-17 | 上海新昇半导体科技有限公司 | Silicon wafer attaching bubble quantity evaluation method and image sensor structure preparation method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04335146A (en) * | 1991-05-10 | 1992-11-24 | Furukawa Electric Co Ltd:The | Method for detecting surface detect of water-stopping type rubber/plastic insulation power cable water-stopping layer |
| CN1183640A (en) * | 1996-11-21 | 1998-06-03 | 日本电气株式会社 | Semiconductor device and method of testing the same |
| CN1806158A (en) * | 2003-06-13 | 2006-07-19 | 株式会社荏原制作所 | Measuring apparatus |
| CN1988770A (en) * | 2005-12-22 | 2007-06-27 | 株式会社东芝 | Substrate inspection method, printed-wiring board, and electronic circuit device |
| WO2013161912A1 (en) * | 2012-04-27 | 2013-10-31 | 株式会社日立ハイテクノロジーズ | Defect inspection device and defect inspection method |
-
2016
- 2016-11-18 CN CN201611016108.5A patent/CN106596581B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04335146A (en) * | 1991-05-10 | 1992-11-24 | Furukawa Electric Co Ltd:The | Method for detecting surface detect of water-stopping type rubber/plastic insulation power cable water-stopping layer |
| CN1183640A (en) * | 1996-11-21 | 1998-06-03 | 日本电气株式会社 | Semiconductor device and method of testing the same |
| CN1806158A (en) * | 2003-06-13 | 2006-07-19 | 株式会社荏原制作所 | Measuring apparatus |
| CN1988770A (en) * | 2005-12-22 | 2007-06-27 | 株式会社东芝 | Substrate inspection method, printed-wiring board, and electronic circuit device |
| WO2013161912A1 (en) * | 2012-04-27 | 2013-10-31 | 株式会社日立ハイテクノロジーズ | Defect inspection device and defect inspection method |
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