CN1801491A - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN1801491A CN1801491A CNA200510073756XA CN200510073756A CN1801491A CN 1801491 A CN1801491 A CN 1801491A CN A200510073756X A CNA200510073756X A CN A200510073756XA CN 200510073756 A CN200510073756 A CN 200510073756A CN 1801491 A CN1801491 A CN 1801491A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 123
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 239000000758 substrate Substances 0.000 claims abstract description 141
- 239000012535 impurity Substances 0.000 claims description 121
- 229910052710 silicon Inorganic materials 0.000 claims description 82
- 239000010703 silicon Substances 0.000 claims description 82
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 78
- 238000005530 etching Methods 0.000 claims description 62
- 239000010410 layer Substances 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 49
- 229910021332 silicide Inorganic materials 0.000 claims description 33
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 33
- 239000011229 interlayer Substances 0.000 claims description 21
- 238000000059 patterning Methods 0.000 claims description 15
- 150000003376 silicon Chemical class 0.000 claims 4
- 238000009413 insulation Methods 0.000 claims 2
- 150000002500 ions Chemical class 0.000 description 107
- 230000015572 biosynthetic process Effects 0.000 description 81
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 25
- 229910052814 silicon oxide Inorganic materials 0.000 description 23
- 229910052581 Si3N4 Inorganic materials 0.000 description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 21
- 238000009792 diffusion process Methods 0.000 description 18
- 239000007789 gas Substances 0.000 description 18
- 230000001133 acceleration Effects 0.000 description 16
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- 238000004151 rapid thermal annealing Methods 0.000 description 15
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- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 11
- 239000010936 titanium Substances 0.000 description 11
- 239000002019 doping agent Substances 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 238000003466 welding Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000000926 separation method Methods 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
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- 238000012797 qualification Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 6
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- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- AIOWANYIHSOXQY-UHFFFAOYSA-N cobalt silicon Chemical compound [Si].[Co] AIOWANYIHSOXQY-UHFFFAOYSA-N 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 210000004483 pasc Anatomy 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 230000035515 penetration Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/82385—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005-001708 | 2005-01-06 | ||
JP2005001708A JP4541902B2 (ja) | 2005-01-06 | 2005-01-06 | 半導体装置の製造方法 |
JP2005001708 | 2005-01-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1801491A true CN1801491A (zh) | 2006-07-12 |
CN1801491B CN1801491B (zh) | 2010-04-28 |
Family
ID=36190416
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200510073756XA Active CN1801491B (zh) | 2005-01-06 | 2005-05-24 | 半导体器件及其制造方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7285838B2 (zh) |
EP (1) | EP1679742B1 (zh) |
JP (1) | JP4541902B2 (zh) |
KR (1) | KR100660592B1 (zh) |
CN (1) | CN1801491B (zh) |
TW (1) | TWI261913B (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006339343A (ja) * | 2005-06-01 | 2006-12-14 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
KR100822806B1 (ko) * | 2006-10-20 | 2008-04-18 | 삼성전자주식회사 | 비휘발성 메모리 장치 및 그 형성 방법 |
JP5167721B2 (ja) | 2007-08-10 | 2013-03-21 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
JP5315779B2 (ja) * | 2008-05-09 | 2013-10-16 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP5202473B2 (ja) | 2009-08-18 | 2013-06-05 | シャープ株式会社 | 半導体装置の製造方法 |
US8247280B2 (en) | 2009-10-20 | 2012-08-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integration of low and high voltage CMOS devices |
US8008146B2 (en) * | 2009-12-04 | 2011-08-30 | International Business Machines Corporation | Different thickness oxide silicon nanowire field effect transistors |
JP5448082B2 (ja) * | 2010-03-05 | 2014-03-19 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6560541B2 (ja) * | 2015-06-08 | 2019-08-14 | ローム株式会社 | 半導体装置 |
US11502036B2 (en) | 2020-02-07 | 2022-11-15 | Renesas Electronics Corporation | Semiconductor device and method of manufacturing the same |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5563873A (en) | 1978-11-07 | 1980-05-14 | Seiko Epson Corp | Semiconductor integrated circuit |
JPS61263261A (ja) * | 1985-05-17 | 1986-11-21 | Nec Corp | Mos型半導体素子の製造方法 |
JPH03242977A (ja) | 1990-02-21 | 1991-10-29 | Sanyo Electric Co Ltd | 半導体装置 |
JPH04279033A (ja) | 1991-03-07 | 1992-10-05 | Sharp Corp | 薄膜トランジスタの製造方法 |
JPH05175228A (ja) | 1991-12-24 | 1993-07-13 | Toshiba Corp | 半導体装置 |
JP3227983B2 (ja) * | 1993-09-10 | 2001-11-12 | ソニー株式会社 | 半導体装置及びその製造方法 |
JPH07263705A (ja) | 1994-03-24 | 1995-10-13 | Sony Corp | 薄膜トランジスタ |
EP0746033A3 (en) * | 1995-06-02 | 1999-06-02 | Texas Instruments Incorporated | Improvements in or relating to semiconductor processing |
JPH10242414A (ja) | 1997-02-28 | 1998-09-11 | Fujitsu Ltd | ダイナミック型半導体記憶装置 |
US6583013B1 (en) * | 1998-11-30 | 2003-06-24 | Texas Instruments Incorporated | Method for forming a mixed voltage circuit having complementary devices |
JP4068746B2 (ja) * | 1998-12-25 | 2008-03-26 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
JP3381147B2 (ja) * | 1999-04-16 | 2003-02-24 | 日本電気株式会社 | 半導体装置及びその製造方法 |
JP2001093984A (ja) | 1999-09-20 | 2001-04-06 | Matsushita Electronics Industry Corp | 半導体装置およびその製造方法 |
JP2002026139A (ja) | 2000-06-30 | 2002-01-25 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
US6468860B1 (en) * | 2000-08-11 | 2002-10-22 | Bae Systems Information And Electronic Systems Integration, Inc. | Integrated circuit capable of operating at two different power supply voltages |
JP4811895B2 (ja) * | 2001-05-02 | 2011-11-09 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP3719192B2 (ja) * | 2001-10-26 | 2005-11-24 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP2003297944A (ja) * | 2002-04-04 | 2003-10-17 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
JP2004172274A (ja) * | 2002-11-19 | 2004-06-17 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP2004228336A (ja) * | 2003-01-23 | 2004-08-12 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
JP2004241733A (ja) * | 2003-02-10 | 2004-08-26 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JPWO2004090983A1 (ja) * | 2003-04-04 | 2006-07-06 | 富士通株式会社 | 半導体装置とその製造方法 |
-
2005
- 2005-01-06 JP JP2005001708A patent/JP4541902B2/ja not_active Expired - Fee Related
- 2005-04-29 US US11/117,689 patent/US7285838B2/en active Active
- 2005-04-29 TW TW094113860A patent/TWI261913B/zh active
- 2005-05-05 EP EP05252769.4A patent/EP1679742B1/en not_active Expired - Fee Related
- 2005-05-19 KR KR1020050042008A patent/KR100660592B1/ko active IP Right Grant
- 2005-05-24 CN CN200510073756XA patent/CN1801491B/zh active Active
-
2007
- 2007-08-01 US US11/882,355 patent/US7419864B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWI261913B (en) | 2006-09-11 |
KR100660592B1 (ko) | 2006-12-21 |
EP1679742B1 (en) | 2016-08-03 |
EP1679742A2 (en) | 2006-07-12 |
US7419864B2 (en) | 2008-09-02 |
CN1801491B (zh) | 2010-04-28 |
JP2006190831A (ja) | 2006-07-20 |
JP4541902B2 (ja) | 2010-09-08 |
KR20060080844A (ko) | 2006-07-11 |
US7285838B2 (en) | 2007-10-23 |
EP1679742A3 (en) | 2009-03-04 |
US20060145286A1 (en) | 2006-07-06 |
US20070281414A1 (en) | 2007-12-06 |
TW200625599A (en) | 2006-07-16 |
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