CN1796128A - Fluid jet device and menufacturing method - Google Patents

Fluid jet device and menufacturing method Download PDF

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Publication number
CN1796128A
CN1796128A CN 200410081966 CN200410081966A CN1796128A CN 1796128 A CN1796128 A CN 1796128A CN 200410081966 CN200410081966 CN 200410081966 CN 200410081966 A CN200410081966 A CN 200410081966A CN 1796128 A CN1796128 A CN 1796128A
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CN
China
Prior art keywords
structure sheaf
ejection apparatus
fluid ejection
fluid
substrate
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CN 200410081966
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Chinese (zh)
Inventor
周忠诚
徐聪平
吴尚羲
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BenQ Corp
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BenQ Corp
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Publication of CN1796128A publication Critical patent/CN1796128A/en
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Abstract

The present invention provides a fluid jetting equipment and its manufacture method. Said fluid jetting equipment includes a base; fluid cavity, formed in the base; structure layer which can be used for covering said base and fluid cavity, in which said structure layer covering said fluid cavity is formed into two zones with different thickness; at least two jet orifices which are respectively passed through the structure layer of the above-mentioned two zones and communicated with said fluid cavity.

Description

Fluid ejection apparatus and manufacture method thereof
Technical field
The present invention relates to a kind of fluid ejection apparatus, particularly a kind of fluid ejection apparatus and manufacture method thereof that changes emitted dose.
Background technology
At present, the fluid ejection apparatus that can eject the various flows scale of construction has been widely used for improving the efficiency of combustion of miniature fuel oil engine, or the color range that is used for increasing printing of inkjet printer shows, for example ink-jet printer (or similar devices such as facsimile machine, multifunctional paper feeding machine) can change by the ink droplet that shower nozzle sprayed, mimeograph documents or photograph to different content are selected different functions, except that the color range performance variation that can make mimeograph documents (utilizing less emitted dose), the speed in the time of also can accelerating to print color range simultaneously (utilizing bigger emitted dose).
Prior art such as United States Patent (USP) the 6th, 588, a kind of fluid ejection apparatus that changes the drop emitted dose is disclosed for No. 878, see also Fig. 1, case is followed the drop (satellite droplet) with minimizing except that utilizing heater (136,138,142,144) to produce two bubbles (152,154 and 156,158) before this, also utilize as each different size among fluid cavity, heater and spray orifice (166,168) distance or the spray orifice aperture three and design, to reach the purpose that changes drop (162,164) size.
The fluid ejection apparatus that changes the drop emitted dose can effectively improve the ink-jet quality of relevant or similar system such as the drug injection of data print processing, fuel injection system or biomedical science and technology as literal or image really, therefore, how under identical energy drives, obtaining the effect of different fluid emitted dose, is the target that industry is worth further making great efforts exploitation.
Summary of the invention
Therefore, the purpose of this invention is to provide a kind of fluid ejection apparatus, wish to pass through the selected of Laminate construction thickness or its material, reach the purpose that ejects the various flows scale of construction under the identical drive condition.
In order to achieve the above object, the invention provides a kind of fluid ejection apparatus, comprising: a substrate; One fluid cavity is formed in this substrate; One structure sheaf is covered on this substrate and this fluid cavity, and this structure sheaf that wherein is covered on this fluid cavity is formed with the different zone of two thickness; At least two spray orifices pass the structure sheaf in above-mentioned two zones respectively and are communicated with this fluid cavity.
The present invention also provides a kind of fluid ejection apparatus, comprising: a substrate; One fluid cavity is formed in this substrate; One first structure sheaf, be covered on this substrate and this fluid cavity, wherein being covered in this first structure sheaf on this fluid cavity, to be formed with thicker zone and the thickness that a thickness is h1 be the thinner region of h2, and deposit second structure sheaf that a thickness is h3 on first structure sheaf of thinner thickness; At least two spray orifices pass the structure sheaf in above-mentioned two zones respectively and are communicated with this fluid cavity.
The present invention also provides a kind of manufacture method of fluid ejection apparatus, comprises the following steps: to provide a substrate; Form a sacrificial patterned in this substrate, this sacrificial patterned is as a predetermined zone that forms first-class body cavity; Form a pattern structure layer in this substrate and cover this sacrificial patterned; Cover a patterning photoresist layer on this pattern structure layer; This pattern structure layer that etching is not covered by this patterning photoresist layer is so that this pattern structure layer that is covered on this sacrificial patterned forms the different zone of two thickness; Remove this patterning photoresist layer; Forming a manifold passes this substrate and exposes this sacrificial patterned; Remove this sacrifice layer, and enlarge the substrate of the former sacrifice layer of etching below, to finish the making of this fluid cavity; And this structure sheaf of etching to be to form at least two spray orifices, passes the structure sheaf in above-mentioned two zones respectively and is communicated with this fluid cavity.
The present invention also provides a kind of manufacture method of fluid ejection apparatus, comprises the following steps: to provide a substrate; Form a sacrificial patterned in this substrate, this sacrificial patterned is as a predetermined zone that forms first-class body cavity; First structure sheaf that forms a coefficient of heat conduction and be k1 is in this substrate and cover this sacrificial patterned; Cover a patterning photoresist layer on this first structure sheaf; This first structure sheaf that etching is not covered by this patterning photoresist layer, to form thicker zone and the thickness that a thickness is h1 be the thinner region of h2 so that be covered in this first structure sheaf on this sacrificial patterned; Second structure sheaf that deposits a coefficient of heat conduction and for k2 thickness be h3 is on first structure sheaf of thinner thickness; Remove this patterning photoresist layer; Forming a manifold passes this substrate and exposes this sacrificial patterned; Remove this sacrifice layer, and enlarge the substrate of the former sacrifice layer of etching below, to finish the making of this fluid cavity; And etching said structure layer to be to form at least two spray orifices, passes the structure sheaf in above-mentioned two zones respectively and is communicated with this fluid cavity.
Description of drawings
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. are described in detail below:
Fig. 1 is the generalized section of prior art fluid ejection apparatus.
Fig. 2 A is the top view of fluid ejection apparatus of the present invention.
Fig. 2 B~Fig. 2 F is the first embodiment of the present invention, the generalized section of the manufacturing process of fluid ejection apparatus.
Fig. 3 is the graph of a relation of fluid ejection apparatus Laminate construction thickness of the present invention and drive condition.
Fig. 4 A and Fig. 4 B are the generalized section of fluid ejection apparatus of the present invention.
Fig. 5 A~Fig. 5 H is the second embodiment of the present invention, the generalized section of the manufacturing process of fluid ejection apparatus.
Description of reference numerals
Prior art is (Fig. 1) partly
136,138,142,144~heater;
152,154,156,158~bubble;
162,164~drop;
166,168~spray orifice.
This case embodiment is (Fig. 2 A~Fig. 2 F, Fig. 3, Fig. 4 A and Fig. 4 B and Fig. 5 A~Fig. 5 H) partly
1,1 ', 24,64,76~structure sheaf;
2,32,34,36,38,68,70,72,74~stratie;
3,43,43 ', 82,84~spray orifice;
4,42,80~fluid cavity;
5~spray orifice is to the distance of heating element heater;
6,7,44,46,48,50,86,88,90,92~bubble;
8,9,52,54,94,96~drop;
20,60~substrate;
22,62~sacrifice layer;
26,66~photoresist layer;
28,30~structure sheaf zone;
40,78~manifold;
A, B~fluid eject mechanism;
K1, k2~coefficient of heat conduction.
The specific embodiment
Embodiment 1
See also the architectural feature of Fig. 2 A and Fig. 2 F explanation present embodiment fluid ejection apparatus, wherein Fig. 2 F is the profile of Fig. 2 A along the 2F-2F intercepting, shown in Fig. 2 F, the structure sheaf 24 that this fluid ejection apparatus is covered on the fluid cavity 42 presents different two zones 28,30 of thickness, that is forms two groups of heating and the different unit of jeting effect.
Please then consult Fig. 2 F, the detailed formation of present embodiment fluid ejection apparatus is described, this fluid ejection apparatus comprises a substrate 20, a manifold 40, a fluid cavity 42, a structure sheaf 24 in uneven thickness, two groups of straties 32,34 and 36,38 and a pair of spray orifice 43,43 '.
Structure sheaf 24 is covered on substrate 20 and the fluid cavity 42, stratie 32,34 and 36,38 is arranged at respectively on the different structure sheaf of thickness 24, and be positioned at spray orifice 43,43 ' both sides, spray orifice 43,43 ' passes the different structure sheaf of thickness 24 respectively and is communicated with fluid cavity 42.
The subsequent Fig. 2 B~Fig. 2 F that sees also, the making of present embodiment fluid ejection apparatus is described, shown in Fig. 2 B, at first, one substrate 20 is provided, a silicon base for example, the thickness of substrate 20 is approximately 625~675 microns, then, form a sacrificial patterned 22 in substrate 20, as a predetermined zone that forms first-class body cavity, sacrifice layer for example is made of boron-phosphorosilicate glass (BPSG), phosphorosilicate glass (PSG) or silica material, wherein be preferred the selection with the phosphorosilicate glass, the thickness of sacrifice layer is approximately 1~2 micron.
Subsequent formation one pattern structure layer 24 is in substrate 20 and overlay pattern sacrifice layer 22, structure sheaf 24 can be for by the formed silicon nitride layer of chemical vapour deposition technique (CVD), the thickness of structure sheaf 24 is approximately 1.5~2 microns, then, see also Fig. 2 C, cover a patterning photoresist layer 26 on structure sheaf 24, afterwards, with patterning photoresist layer 26 is that mask etching is not patterned the structure sheaf 24 that photoresist layer 26 covers, make structure sheaf 24 on sacrificial patterned 22 form two thickness differences for example greater than the zone 28 of 3500 dusts, 30, shown in Fig. 2 D, because structure sheaf 24 is in uneven thickness, thereby make structure sheaf 24 produce different heat conduction efficiency in its different-thickness place.
Subsequently, shown in Fig. 2 E, remove patterning photoresist layer 26.Subsequent be provided with two groups as the stratie 32,34 of drive fluid and 36,38 respectively on the structure sheaf 24 in zone 28,30 and be located at the both sides that form the spray orifice position in the future, stratie 32,34 and 36,38 is for example by HfB 2, TaAl, TaN or TiN constitute, and wherein are preferred the selection with TaAl.
Next, begin to carry out a series of etching process, to form final fluid ejection apparatus, at first, with etching solution for example is the back side of the anisotropy wet etch method etching substrate 20 of potassium hydroxide (KOH) solution, to form a manifold 40, and expose sacrificial patterned 22, the narrow opening width of manifold 40 is approximately 160~200 microns, wide A/F is approximately 1100~1200 microns, and its inwall and horizontal line angle are approximately 54.74 degree, thereby the manifold 40 after the etching is a low wide and up narrow shape and structure, in addition, manifold 40 is interconnected with a fluid accumulator tank downwards.
Subsequent wet etch method etched pattern sacrifice layer 22 with hydrofluoric acid containing (HF) solution, afterwards, for example be the wet etch method etching substrate 20 of potassium hydroxide (KOH) solution once again with etching solution, to enlarge the zone that sacrificial patterned is emptied, and formation fluid cavity 42, shown in Fig. 2 F, at last, etch structures layer 24, pass the structure sheaf in above-mentioned two zones and the spray orifice 43 and 43 ' that is communicated with fluid cavity 42 respectively to form two, etching process can utilize plasma etching, the chemical gas etching, reactive ion etching or laser etching method, and be preferred the selection with the reactive ion etching, so far, promptly finish the making of a fluid injection apparatus.
According to heat-conduction principle: J=-K Δ T/L, under the identical temperature difference (Δ T fixes), heat flux (J) is directly proportional with the coefficient of heat conduction (K), be inversely proportional to transmitting distance (L), and the distance of transmission herein (L) promptly is a Laminate construction thickness of the present invention.See also Fig. 3, Fig. 3 is the different injection apparatus of Laminate construction thickness, when desiring to reach identical jeting effect, the graph of a relation of its energy intensity (power intensity) and heat time heating time (heating time), can find out among the figure, along with Laminate construction thickness increases, heat time heating time must with increase, can keep identical heat conduction efficiency.
Subsequent Fig. 4 A and Fig. 4 B of seeing also, Fig. 4 A and Fig. 4 B show the jeting effect of two groups of fluid eject mechanisms (A, B), these two groups of fluid eject mechanisms are except that the thickness difference of structure sheaf 1 and 1 ', all the other all are designed to same size as heater 2, spray orifice 3, fluid cavity 4 and spray orifice 3 distance 5 to heater 2.After going through identical heat time heating time, because the thickness different (1>1 ') of structure sheaf (1 and 1 '), cause and produce the bubble 6 and 7 (6<7) that varies in size, and further penetrate the drop 8,9 (8<9) of different sizes, reach the different effect of fluid emitted dose by bubble 6,7 extruding.
According to above-mentioned principle, see also Fig. 2 F, the fluid jeting effect of present embodiment is described, because the Laminate construction thickness in zone 28 Laminate construction thickness in zone 30 approaches, cause the bubble 44 of generation and 46 big than bubble 48 and 50, and make zone 28 penetrate the drop 52 big than drop 54, and the liquid-drop diameter ratio is approximately 1.15~1.3 (52/54), and the present embodiment fluid ejection apparatus promptly reaches the effect that changes emitted dose whereby.
Embodiment 2
See also the architectural feature of Fig. 2 A and Fig. 5 H explanation present embodiment fluid ejection apparatus, wherein Fig. 5 H is the profile of Fig. 2 A along the 5H-5H intercepting, shown in Fig. 5 H, first structure sheaf 64 (coefficient of heat conduction is k1) that this fluid ejection apparatus is covered on the fluid cavity 80 presents two different zones 28 of thickness (thickness is h2) and 30 (thickness is h1), and second structure sheaf 76 (coefficient of heat conduction be k2) different that in thickness be that to deposit a thickness on first structure sheaf 64 of h2 again be the h3 material with first structure sheaf 64, heat and the different unit of jeting effect and form two groups, the difference of present embodiment and embodiment 1 is, embodiment 1 utilizes the difference in thickness of single layer structure layer to change jeting effect, and present embodiment then is to utilize the structure sheaf of storehouse unlike material to change jeting effect.
Please continue and then consult Fig. 5 H, the detailed formation of present embodiment fluid ejection apparatus is described, this fluid ejection apparatus comprises a substrate 60, a manifold 78, a fluid cavity 80, one first structure sheaf 64, one second structure sheaf 76, two groups of straties 68,70 and 72,74 and a pair of spray orifice 82,84.
First structure sheaf 64 is covered on substrate 60 and the fluid cavity 80, second structure sheaf 76 is deposited on first structure sheaf 64 of thinner thickness, stratie 68,70 and 72,74 is arranged at respectively on second structure sheaf 76 and first structure sheaf 64, and be positioned at spray orifice 82,84 both sides, spray orifice 82,84 passes each structure sheaf respectively and is communicated with fluid cavity 80.
The subsequent Fig. 5 A~Fig. 5 H that sees also, the making of present embodiment fluid ejection apparatus is described, shown in Fig. 5 A, at first, one substrate 60 is provided, a silicon base for example, the thickness of substrate 60 is approximately 625~675 microns, then, form a sacrificial patterned 62 in substrate 60, as a predetermined zone that forms first-class body cavity, sacrifice layer for example is made of boron-phosphorosilicate glass (BPSG), phosphorosilicate glass (PSG) or silica material, wherein be preferred the selection with the phosphorosilicate glass, the thickness of sacrifice layer is approximately 1~2 micron.
Then forming a coefficient of heat conduction is k1, thickness is that first structure sheaf 64 of h1 is in substrate 60 and overlay pattern sacrifice layer 62, first structure sheaf 64 can be for by the formed silicon nitride layer of chemical vapour deposition technique (CVD), the thickness of first structure sheaf 64 is approximately 1.5~2 microns, then, see also Fig. 5 B, cover a patterning photoresist layer 66 on first structure sheaf 64, afterwards, with patterning photoresist layer 66 is that mask etching is not patterned first structure sheaf 64 that photoresist layer 66 covers, make first structure sheaf 64 on sacrificial patterned 62 form two thickness differences for example greater than the zone 28 of 3500 dusts, 30, wherein thicker regional 30 thickness is h1, the thickness of thinner region 28 is h2, shown in Fig. 5 C, then, second structure sheaf 76 that deposits a coefficient of heat conduction and for k2 thickness be h3 is on first structure sheaf 64 and patterning photoresist layer 66 in zone 28, second structure sheaf 76 also can be for by the formed silicon monoxide of chemical vapour deposition technique (CVD), silicon nitride or silicon oxynitride layer, it should be noted that, first and second structure sheaf can be unlike material or for utilizing the formed identical material of different sintering temperatures (sintered temperature), the relation of its k1 and k2 can be k1>k2 or k1<k2, and Laminate construction thickness h1, the relation of h2 and h3 can be h1=h2+h3 (shown in Fig. 5 D), h1>h2+h3 (shown in Fig. 5 E) or h1<h2+h3 (shown in Fig. 5 F), the manufacturing process condition of the selected h1=h2+h3 of present embodiment, because the in uneven thickness or coefficient of heat conduction of structure sheaf is inequality, thereby make the stack architecture layer (64 in zone 28,76) (thickness is h2+h3) produces different heat conduction efficiency with the structure sheaf 64 (thickness is h1) in zone 30.
The manufacturing process of above-mentioned formation different heating efficient, can be at the different photoresists or second structure sheaf selected, carry out the process different with abovementioned steps.After for example treating that first structure sheaf has formed the different thermal treatment zone etching process of thickness, also can earlier patterning photoresist layer 66 be removed, continuing is deposited on first structure sheaf top with second structure sheaf again; Be covered in second structure sheaf top with the patterning photoresist layer again, with similar mask etching process, but keep original second structure sheaf that approaches top, the first structure sheaf zone, and reach the purpose of compound stack architecture layer.
Subsequently, shown in Fig. 5 G, remove patterning photoresist layer 66.Then be provided with two groups as the stratie 68,70 of drive fluid and 72,74 respectively on second structure sheaf 76 and first structure sheaf 64 and be located at the both sides that form the spray orifice position in the future, stratie 68,70 and 72,74 is for example by HfB 2, TaAl, TaN or TiN constitute, and wherein are preferred the selection with TaAl.
Next, begin to carry out a series of etching process, to form final fluid ejection apparatus, at first, with etching solution for example is the back side of the anisotropy wet etch method etching substrate 60 of potassium hydroxide (KOH) solution, to form a manifold 78, and expose sacrificial patterned 62, the narrow opening width of manifold 78 is approximately 160~200 microns, wide A/F is approximately 1100~1200 microns, its inwall and horizontal line angle are approximately 54.74 degree, thereby the manifold 78 after the etching is a low wide and up narrow shape and structure, and in addition manifold 78 is interconnected with a fluid accumulator tank downwards.
Subsequent wet etch method etched pattern sacrifice layer 62 with hydrofluoric acid containing (HF) solution, afterwards, for example be the wet etch method etching substrate 60 of potassium hydroxide (KOH) solution once again with etching solution, to enlarge the zone that sacrificial patterned is emptied, and form fluid cavity 80, shown in Fig. 5 H, last, each structure sheaf of etching is to form two spray orifices 82 and 84 that pass each structure sheaf respectively and be communicated with fluid cavity 80.Etch process can utilize plasma etching, chemical gas etching, reactive ion etching or laser-induced thermal etching method, and is preferred the selection with the reactive ion etching, so far, promptly finishes the making of a fluid injection apparatus.
According to heat-conduction principle, under the identical temperature difference (Δ T fixes), heat flux J is directly proportional with coefficient of heat conduction k, see also Fig. 5 H, the fluid jeting effect of present embodiment is described, if k2>k1, under identical heat time heating time, because the bubble 86 that produces is big than bubble 90 and 92 with 88, therefore, regional 28 can spray more regional 30 more fluid amounts (94>96), wherein the liquid-drop diameter ratio is approximately 1.15~1.3 (94/96), otherwise, then obtaining opposite jeting effect, the present embodiment fluid ejection apparatus promptly reaches the effect that changes emitted dose whereby.
Though the present invention with preferred embodiment openly as above; yet; it is not in order to limit the present invention; those skilled in the art; under the premise without departing from the spirit and scope of the present invention; certainly can do to change and retouching, so protection scope of the present invention should be as the criterion with the scope that appending claims was defined.

Claims (30)

1. fluid ejection apparatus comprises:
One substrate;
One fluid cavity is formed in the described substrate;
One structure sheaf is covered on described substrate and the described fluid cavity, and the described structure sheaf that wherein is covered on the described fluid cavity is formed with two zones that thickness is different; And
At least two spray orifices pass the structure sheaf in described two zones respectively and are communicated with described fluid cavity.
2. fluid ejection apparatus as claimed in claim 1, wherein said structure sheaf is made of silicon nitride.
3. fluid ejection apparatus as claimed in claim 1 is put, and the thickness difference of wherein said structure sheaf is greater than 3500 dusts.
4. fluid ejection apparatus as claimed in claim 1, the heat conduction efficiency difference of wherein said structure sheaf.
5. fluid ejection apparatus as claimed in claim 1, wherein the drop that sprays from described two zones respectively varies in size.
6. fluid ejection apparatus as claimed in claim 5, wherein the liquid-drop diameter ratio that sprays from described two zones respectively is approximately 1.15~1.3.
7. fluid ejection apparatus comprises:
One substrate;
One fluid cavity is formed in the described substrate;
One coefficient of heat conduction is first structure sheaf of k1, be covered on described substrate and the described fluid cavity, wherein being covered in described first structure sheaf on the described fluid cavity, to be formed with first area and the thickness that a thickness is h1 be the second area of h2, and be that to deposit a coefficient of heat conduction on first structure sheaf of h2 be that k2, thickness are second structure sheaf of h3 in thickness;
At least two spray orifices pass described first and second regional structure sheaf respectively and are communicated with described fluid cavity.
8. fluid ejection apparatus as claimed in claim 7, wherein said first structure sheaf is made of silicon nitride, and described second structure sheaf is made of silica, silicon nitride or silicon oxynitride.
9. fluid ejection apparatus as claimed in claim 8, wherein said first and second structure sheaf are unlike material or the identical material for utilizing different sintering temperatures to form.
10. fluid ejection apparatus as claimed in claim 7, wherein k1 is not equal to k2.
11. fluid ejection apparatus as claimed in claim 7, wherein h1=h2+h3.
12. fluid ejection apparatus as claimed in claim 7, wherein h1 is not equal to h2+h3.
13. fluid ejection apparatus as claimed in claim 7, wherein said first and second regional heat conduction efficiency difference.
14. fluid ejection apparatus as claimed in claim 7, wherein the drop from described first and second zone ejection varies in size.
15. fluid ejection apparatus as claimed in claim 14, wherein the liquid-drop diameter ratio from described first and second zone ejection is approximately 1.15~1.3.
16. the manufacture method of a fluid ejection apparatus comprises the following steps:
One substrate is provided;
Form a sacrificial patterned in described substrate, described sacrificial patterned is as a predetermined zone that forms first-class body cavity;
Form a pattern structure layer in described substrate and cover described sacrificial patterned;
Cover a patterning photoresist layer on described pattern structure layer;
The described pattern structure layer that etching is not covered by described patterning photoresist layer is so that the described pattern structure layer that is covered on the described sacrificial patterned forms two zones that thickness is different;
Remove described patterning photoresist layer;
Forming a manifold passes described substrate and exposes described sacrificial patterned;
Remove described sacrifice layer, and enlarge the substrate of the former sacrifice layer of etching below, to finish the making of described fluid cavity; And
The described structure sheaf of etching to be to form at least two spray orifices, passes the structure sheaf in described two zones respectively and is communicated with described fluid cavity.
17. the manufacture method of fluid ejection apparatus as claimed in claim 16, wherein said structure sheaf is made of silicon nitride.
18. the manufacture method of fluid ejection apparatus as claimed in claim 16, the thickness difference of wherein said structure sheaf is greater than 3500 dusts.
19. the manufacture method of fluid ejection apparatus as claimed in claim 16, the heat conduction efficiency difference of wherein said structure sheaf.
20. the manufacture method of fluid ejection apparatus as claimed in claim 16, wherein the drop that sprays from described two zones respectively varies in size.
21. the manufacture method of fluid ejection apparatus as claimed in claim 20, wherein the liquid-drop diameter ratio that sprays from described two zones respectively is approximately 1.15~1.3.
22. the manufacture method of a fluid ejection apparatus comprises the following steps:
One substrate is provided;
Form a sacrificial patterned in described substrate, described sacrificial patterned is as a predetermined zone that forms first-class body cavity;
One first structure sheaf that forms the coefficient of heat conduction and be k1 is in described substrate and cover described sacrificial patterned;
Cover a patterning photoresist layer on described first structure sheaf;
Described first structure sheaf that etching is not covered by described patterning photoresist layer, to form first area and the thickness that a thickness is h1 be the second area of h2 so that be covered in described first structure sheaf on the described sacrificial patterned;
The deposition coefficient of heat conduction is that k2, thickness are that one second structure sheaf of h3 is on first structure sheaf of h2 in thickness;
Remove described patterning photoresist layer;
Forming a manifold passes described substrate and exposes described sacrificial patterned;
Remove described sacrifice layer, and enlarge the substrate of the former sacrifice layer of etching below, to finish the making of described fluid cavity; And
The described structure sheaf of etching to be to form at least two spray orifices, passes described first and second regional structure sheaf respectively and is communicated with described fluid cavity.
23. the manufacture method of fluid ejection apparatus as claimed in claim 22, wherein said first structure sheaf is made of silicon nitride, and described second structure sheaf is made of silica, silicon nitride or silicon oxynitride.
24. the manufacture method of fluid ejection apparatus as claimed in claim 23, wherein said first and second structure sheaf are unlike material or the identical material for utilizing different sintering temperatures to form.
25. the manufacture method of fluid ejection apparatus as claimed in claim 22, wherein k1 is not equal to k2.
26. the manufacture method of fluid ejection apparatus as claimed in claim 22, wherein h1=h2+h3.
27. the manufacture method of fluid ejection apparatus as claimed in claim 22, wherein h1 is not equal to h2+h3.
28. the manufacture method of fluid ejection apparatus as claimed in claim 22, wherein said first and second regional heat conduction efficiency difference.
29. the manufacture method of fluid ejection apparatus as claimed in claim 22, wherein the drop from described first and second zone ejection varies in size.
30. the manufacture method of fluid ejection apparatus as claimed in claim 29, wherein the liquid-drop diameter ratio from described first and second two zones ejection is approximately 1.15~1.3.
CN 200410081966 2004-12-30 2004-12-30 Fluid jet device and menufacturing method Pending CN1796128A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102485937A (en) * 2010-12-03 2012-06-06 财团法人工业技术研究院 Apparatus and method for depositing thin film pattern

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102485937A (en) * 2010-12-03 2012-06-06 财团法人工业技术研究院 Apparatus and method for depositing thin film pattern
CN102485937B (en) * 2010-12-03 2014-05-28 财团法人工业技术研究院 Apparatus and method for depositing thin film pattern

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