CN1787364A - Low noise amplifier with low noise and high gain - Google Patents
Low noise amplifier with low noise and high gain Download PDFInfo
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- CN1787364A CN1787364A CN 200410100332 CN200410100332A CN1787364A CN 1787364 A CN1787364 A CN 1787364A CN 200410100332 CN200410100332 CN 200410100332 CN 200410100332 A CN200410100332 A CN 200410100332A CN 1787364 A CN1787364 A CN 1787364A
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- low noise
- amplifier
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- impedance
- noise amplifier
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Abstract
This invention relates to a low noise amplifier with low noise and high gain containing a differential amplifier, a preamplifier and an impedance matched network connected with said differential amplifier and the preamplifier to match with the input impedance of said differential amplifier and the output impedance of said preamplifier.
Description
Technical field
The present invention relates to a kind of low noise amplifier, particularly a kind of low noise amplifier with high-gain.
Background technology
Along with popularizing of mobile phone, mobile communication in people's now life in occupation of very important role.The research and development that the design manufacturer of many circuit endeavours each circuit blocks in the communication system improve.Low noise amplifier belongs to the part of receiver in the communication system, and it is playing the part of the function that the signal that will receive amplifies and suppress the noise of receiver own in the receiver design of communication system.
The design of general low noise amplifier is the single-ended framework that inputs to single-ended output, yet these single-ended output frameworks make the mixer after low noise amplifier must be designed to single-ended input type, thereby can't reduce the common-mode noise of frequency mixer and the signal that is reached frequency mixer output by oscillator effectively.If change low noise amplifier, just in time can effectively address these problems with the differential way of output.Wish to get the low noise amplifier of a differential output, the simplest and easy and the most common framework is the differential low noise amplifier that inputs to differential output.Yet this framework needs to add in the differential low noise amplifier prime that inputs to differential output the transducer of one-level balance-to-nonbalance, becomes differential-pair signal with the single-ended received signal with antenna end.Such way will be spent more the price of the transducer of expense one-level balance-to-nonbalance on cost, simultaneously also owing to add the noise pointer that loss that this transducer has more has increased whole receiver.Therefore, more satisfactory design is the low noise amplifier of the differential output of single-ended input.
Please refer to Fig. 1.Fig. 1 is the low noise amplifier 10 of the existing differential output of single-ended input.Low noise amplifier 10 utilizes the single-ended transducer that inputs to differential output of a passive type to reach.Low noise amplifier 10 comprises a transducer 12, a differential amplifier 14.Transducer 12 is to be formed by the coiling of the metal on the integrated circuit.Thereafter connecting the differential amplifier that comprises two differential pair of transistors amplifies with the high-frequency signal that the RFin end is entered.ZL among Fig. 1 in the differential amplifier 14 is the matched impedance of output, the differential RFout that is output as.Transducer 12 is formed by the metal on integrated circuit coiling, and so metal coiling occupies very big area on circuit layout, therefore, relative increase a lot of costs of manufacture.
Please refer to Fig. 2.Fig. 2 is the low noise amplifier 20 of another existing differential output of single-ended input.Low noise amplifier 20 comprises one first end input impedance 21, one second end input impedance 22 and a differential amplifier.Low noise amplifier 20 with the grid of one of them differential pair of transistors of differential amplifier via the second end input impedance, 22 ground connection.The grid of another differential pair of transistors is received input RFin via the first end input impedance 21.The framework of Fig. 2 not only can be realized the low noise amplifier of the differential output of single-ended input, and has removed more space consuming transducer coil among Fig. 1, the shortcoming of low noise amplifier among mutually right improvement Fig. 1.Yet the mode on this edge joint ground needs both sides to do the coupling of impedance, increases the complexity of low noise amplifier.This is because on high-frequency operation, be not a desirable high impedance current source in order to the differential right current source Is of bias voltage, so transistor M2 can't merely be considered as it common source configuration in the design of noise and gain.
In the low noise amplifier of existing single-ended input, differential output,, then, transducer produces the problem that cost of manufacture increases on circuit layout because of occupying than large tracts of land as adopt the metal coiling at input as transducer.On the other hand, as utilize the mode of ground connection to realize single-ended input, then can consider the high frequency effect of current source, and increase the noise and the design complexities of low noise amplifier because of needs to differential pair of transistors.
Summary of the invention
The present invention discloses a kind of low noise amplifier with low noise and high-gain, and it comprises: a differential amplifier, and it comprises a first input end and one second input, and this second input is connected to an impedance ground; One preamplifier, it comprises an input and an output; An and impedance matching network, the one end links to each other with the first input end of this differential amplifier, its other end links to each other with the output of this preamplifier, and this impedance matching network is to be used for mating the input impedance of this differential amplifier and the output impedance of this preamplifier.
Description of drawings
Fig. 1 is the schematic diagram for the low noise amplifier of the existing differential output of single-ended input.
Fig. 2 is the schematic diagram for the low noise amplifier of another existing differential output of single-ended input.
Fig. 3 is the schematic diagram for first embodiment of the low noise amplifier with high-gain of the present invention.
Fig. 4 is the schematic diagram for second embodiment of the low noise amplifier with high-gain of the present invention.
Fig. 5 is the schematic diagram for the 3rd embodiment of the low noise amplifier with high-gain of the present invention.
Fig. 6 is the schematic diagram for the 4th embodiment of the low noise amplifier with high-gain of the present invention.
The reference numeral explanation
10,20,30,40,50,60 low noise amplifiers
12 balance-to-nonbalance converters
14,24,34,44,54,64 differential amplifiers
21 first end input impedance
22 second end input impedance
32,42,52,62 preamplifiers
36,46,56,66 impedance matching networks
38,48,58,68 impedance grounds
Embodiment
Please refer to Fig. 3.Fig. 3 is the schematic diagram of first embodiment 30 of the low noise amplifier with high-gain of the present invention.Low noise amplifier 30 comprises a preamplifier 32, a differential amplifier 34, an impedance matching network 36 and an impedance ground 38.In this implemented, differential amplifier 34 mainly constituted differential right transistor M2 and M3 by two and forms.The drain electrode of transistor M2 and M3 respectively is connected a load Z
LTo power supply supply current potential V
DDSimultaneously, the drain electrode of transistor M2 and M3 promptly is the differential output end of this low noise amplifier.The differential grid that is input as transistor M2 and M3 of differential amplifier 34, wherein an end differential input terminal (grid of transistor M3) is connected to impedance ground 38.The impedance ground 38 of present embodiment is a capacitor C
B, be used for intercepting direct current signal to form the grid bias of transistor M3.Impedance matching network 36 connects another input (grid of transistor M4) of differential amplifier 34 and the output of preamplifier 32.
Prior art person knows, after the frequency height of signal arrives a certain degree, such as be the signal of radio-frequency region, in the circuit transistorized stray electrical perhaps shunt capacitance or the like effect all become the significant consideration that influences system effectiveness performance, simultaneously, the transmission of high-frequency signal must go to treat with electromagnetic viewpoint, performance that just can accurately prognoses system.Electromagnetic wave is in the process of medium transmission as run into the impedance difference of different section media, then can the generating unit sub reflector, the phenomenon of part transmission, and this situation can cause signal can't effectively be delivered to next section medium, therefore must try every possible means to solve.The problem of transmission that solves high-frequency signal must see through the method for impedance matching, makes signal when the one-level circuit blocks reaches the next stage circuit blocks, can avoid signal reflex as far as possible and is passed to next stage fully.
Impedance matching network 36 connects preamplifier 32 and differential amplifier 34, and purposes is to mate the impedance between this dual-stage amplifier.Whole preamplifier 32 is the amplifier of the single-ended output of single-ended input, and it comprises a common source transistor M1 and a load matched impedance Z 1.The source electrode of transistor M1 is through degeneration (degeneration) impedance Z
DECTo earth terminal, load matched impedance Z 1 is received in drain electrode, and grid is the input of preamplifier 32.The input signal of low noise amplifier of the present invention is entered preamplifier again and is done amplification by the end input of the input impedance Zin of Fig. 3.
Main spirit of the present invention is to change the pattern that low noise amplifier is the differential output of single-ended input, and has increased preamplifier 32, and purpose is to realize low noise design.Can learn that by the Friis equation noise pointer of transistor M1 has just determined the noise pointer height of whole low noise amplifier among Fig. 3.The Friis equation is as follows:
F in the formula
LNABe the noise pointer of whole low noise amplifier, F1 is the noise pointer based on M1, and F2 is the noise pointer based on M2 and M3 differential amplifier.And G
A1Be can availablely gain (available power gain) based on M1.By in the formula as can be known, M2 and M3 differential amplifier are that main noise pointer will make the noise pointer that contributes to whole low noise amplifier become more inessential because of having added a preamplifier, and real apparent in view noise contribution is the noise pointer of preamplifier.And because preamplifier 32 simple single-transistor amplifier just, so that the noise pointer can be than differential amplifier 34 is little, thus, just can reaches whole low noise amplifier 30 and have purpose than low noise figure.Simultaneously, many preamplifiers 32, it is bigger that whole gains of low noise amplifier 30 also can become.At last, because after having added preamplifier 32, the design of whole low noise amplifier will be comparatively simple, only need to get final product at the optimization choice that M1 mixes because of parameter and between gaining.
The single-ended low noise amplifier that inputs to differential input that utilizes the passive type transducer in Fig. 1, the single-ended low noise amplifier that inputs to differential output of the present invention more can be avoided the loss that is produced because of the passive type transducer except aforementioned described significantly the saving the shared area of passive type transducer arranged.Alleged just like the Friis equation, the loss of prime will directly increase the whole single-ended noise pointer that inputs to differential output, and this equal loss is especially serious on the substrate (as silica substrate) of tool loss.Differential for framework compared to the formula single-end earthed of Fig. 2, low noise amplifier of the present invention has design of being easier to and more low noise advantage.Study carefully its because of, the single-ended of Fig. 2 inputs to the low noise amplifier of differential output because high frequency earthing point is difficult for design, therefore being easy to take place differential right two ends can't reach real impedance symmetry, really on current source on the entity circuit and differential right source contact, can not find the virtual connection place and make, make current source contribute its noise on the contrary to whole low noise amplifier.
Best case study on implementation of the present invention is to be example with MOS (metal-oxide-semiconductor) transistor (MOSFET) assembly.In the realization of reality, two-carrier transistor (BJT) or other have the driving component of enlarging function all can be implemented by this framework.The M1 of Fig. 3 can impose two-carrier transistor (BJT) or other driving component with enlarging function replaces it, and also can obtain identical benifit; And in ensuing embodiment, be the driving component of transistor or other tool enlarging function with the assembly that no longer indicates with respect to the M1 among Fig. 3, M2 and M3.In addition, it is differential to also being not limited to the framework that has only two transistors to form that M2 and M3 constituted among Fig. 3, has repeatedly (cascode) framework differential right of string and can be.See also Fig. 4.Fig. 4 is the schematic diagram of second embodiment 40 of the low noise amplifier with high-gain of the present invention.Low noise amplifier 40 with high-gain of the present invention comprises a preamplifier 42, a differential amplifier 44, an impedance matching network 46 and an impedance ground 48.Compare with first embodiment 30 of low noise amplifier of the present invention among Fig. 3, the M4 of Fig. 4 and M5 are a string level amplifier repeatedly, and its bias voltage is VB1 and VB2.M4 and M5 can increase the gain of differential amplifier 44 and improve its stability simultaneously.See also Fig. 5 again.Fig. 5 is the schematic diagram of the 3rd embodiment 50 of the low noise amplifier with high-gain of the present invention, and it is the extension framework of Fig. 4.Similarly, the low noise amplifier 50 with high-gain of the present invention comprises a preamplifier 52, a differential amplifier 54, an impedance matching network 56 and an impedance ground 58.And in the differential amplifier 54 of Fig. 5, the source electrode of M2 and M3 is concatenated into two degeneration inductor Z respectively
D2With Z
D3M2 is connected in series the linearity that can increase this grade amplifier to degeneration inductor with the source electrode of M3.
See also Fig. 6.Fig. 6 is the schematic diagram of the 4th embodiment 60 of the low noise amplifier with high-gain of the present invention.Low noise amplifier 60 with high-gain of the present invention shown in Figure 6 is to be the framework of high-gain and low gain switching, and it comprises a preamplifier 62, a differential amplifier 64, an impedance matching network 66 and an impedance ground 68.When amplifier switched to high-gain, M4 and M5 were open mode and M6 and M7 are closed condition.This moment, high-frequency signal was by M2 to M4 and Z
L1To the anode of RFout, and another route M3 to M5 and Z
L1To the negative terminal of RFout and form differential wave.Similarly, when amplifier switched to low gain, M6 and M7 were open mode and M4 and M5 are closed condition.The output RFout of amplifier will see by Z this moment
L1, Z
L2With Z
GFormed passive network.
In the low noise amplifier of existing single-ended input, differential output,, then, transducer produces the problem that cost of manufacture increases on circuit layout because of occupying than large tracts of land as adopt the metal coiling at input as transducer.On the other hand, as utilize the mode of ground connection to realize single-ended input, then can do impedance matching on the differential pair of transistors both sides, and increase the complexity of low noise amplifier because of needs.Low noise amplifier of the present invention utilizes an impedance ground to be connected to earth potential at an input of differential amplifier, and defines the input voltage of this input, and adds a preamplifier at another input.Therefore, low noise amplifier of the present invention has constituted the low noise amplifier pattern of the differential output of single-ended input, simultaneously, the noise figure of whole amplifier is contributed by preamplifier by mainly becoming mainly from the differential amplifier contribution originally, make noise figure become lower, in addition, also because many relations of one-level preamplifier, the gain of low noise amplifier of the present invention also will promote.At last, owing to utilize the design of single transistor as preamplifier, the design of whole low noise amplifier will be comparatively simple, only need to get final product at the optimization choice that M1 mixes because of parameter and between gaining.Therefore, of the present invention have a low noise, high-gain, and the advantage of design easily.
The above only is preferred embodiment of the present invention, and all equalizations of being done according to the present patent application claim change and modify, and all should belong to covering scope of the present invention.
Claims (6)
1. low noise amplifier with low noise and high-gain, it comprises:
One differential amplifier, it comprises a first input end and one second input, and this second input is connected to an impedance ground;
One preamplifier, it comprises an input and an output; And
One impedance matching network, the one end links to each other with the first input end of this differential amplifier, and its other end links to each other with the output of this preamplifier, and this impedance matching network is to be used for mating the input impedance of this differential amplifier and the output impedance of this preamplifier.
2. low noise amplifier as claimed in claim 1, it comprises an input matched impedance in addition, is connected in the input of this preamplifier.
3. low noise amplifier as claimed in claim 1, wherein, this preamplifier is a common source single-transistor amplifier, it comprises:
One transistor, its source electrode is connected to earth potential; And
One load matched impedance is connected in this transistor drain.
4. low noise amplifier as claimed in claim 1, wherein, this preamplifier is to be a common source single-transistor amplifier, it comprises:
One transistor, its source electrode is connected to earth potential;
One load matched impedance is connected in this transistor drain; And
One degeneration impedance is connected between this transistorized source electrode and the ground.
5. low noise amplifier as claimed in claim 1, wherein, the impedance that this of this differential amplifier second input is connected is to be an electric capacity.
6. low noise amplifier as claimed in claim 1, wherein, this differential amplifier has two differential output ends.
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CNB2004101003323A CN100536318C (en) | 2004-12-06 | 2004-12-06 | Low noise amplifier with low noise and high gain |
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CNB2004101003323A CN100536318C (en) | 2004-12-06 | 2004-12-06 | Low noise amplifier with low noise and high gain |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101494441A (en) * | 2008-01-24 | 2009-07-29 | 三星电子株式会社 | Wideband low noise amplifier |
CN102484453A (en) * | 2009-05-27 | 2012-05-30 | 印度科学院 | Low Noise Amplifier And Mixer |
CN104348432A (en) * | 2013-08-09 | 2015-02-11 | 成都国腾电子技术股份有限公司 | Single-converted-to-double low noise amplifier with highly balanced and stabilized differential output gain phase |
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JPS4893216A (en) * | 1972-03-10 | 1973-12-03 | ||
US4366446A (en) * | 1980-10-22 | 1982-12-28 | Rca Corporation | Feedback linearization of cascode amplifier configurations |
DE3141790A1 (en) * | 1981-10-21 | 1983-04-28 | Siemens AG, 1000 Berlin und 8000 München | INTEGRATED FREQUENCY DIVISION |
CN1252912C (en) * | 2003-10-17 | 2006-04-19 | 清华大学 | Low-Volage high-linearity radio-frequency amplifier for on-chip impedance match |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101494441A (en) * | 2008-01-24 | 2009-07-29 | 三星电子株式会社 | Wideband low noise amplifier |
CN101494441B (en) * | 2008-01-24 | 2013-04-03 | 三星电子株式会社 | Wideband low noise amplifier |
CN102484453A (en) * | 2009-05-27 | 2012-05-30 | 印度科学院 | Low Noise Amplifier And Mixer |
CN104348432A (en) * | 2013-08-09 | 2015-02-11 | 成都国腾电子技术股份有限公司 | Single-converted-to-double low noise amplifier with highly balanced and stabilized differential output gain phase |
CN104348432B (en) * | 2013-08-09 | 2017-10-17 | 成都振芯科技股份有限公司 | A kind of difference output gain-phase high balance and sane single turn double low-noise amplifier |
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