CN1779661A - Device and method for delaying nonvolatile memory using life - Google Patents
Device and method for delaying nonvolatile memory using life Download PDFInfo
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- CN1779661A CN1779661A CN 200410052510 CN200410052510A CN1779661A CN 1779661 A CN1779661 A CN 1779661A CN 200410052510 CN200410052510 CN 200410052510 CN 200410052510 A CN200410052510 A CN 200410052510A CN 1779661 A CN1779661 A CN 1779661A
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Abstract
A device for prolonging service file of nonvolatile storage consists of a nonvolatile storage being divided to be multiple sectors on basis of physical logic and a host including a data read - write module, a sector mark write in module, a sector mark detection module, and a data read write pointer.
Description
[technical field]
The present invention is about a kind of storer device and method in serviceable life that prolongs, and special system relates to a kind of non-volatility memorizer device and method in serviceable life that prolongs.
[background technology]
Along with information industry flourish with information medium use universal day by day, the storer that is used for store various types information seems and becomes more and more important.Wherein, electronic memory is undoubtedly most important a kind of.At present electronic memory mainly can be divided into two classes according to function, a class be zero access random access memory (Random Access Memory, RAM), its read or write speed can be 100 how below second (ns), but does not have the permanent memory function; Another kind of then is that (Read Only Memory ROM), has the permanent memory function, but the speed that data writes needs the above time of microsecond (ms) for the ROM (read-only memory) of non-volatile (Non-Volatile).
Flash Rom is a kind of non-volatility memorizer, and it is divided to divide a plurality of sectors (Sector) on physical logic.Therefore consider the problem in serviceable life of non-volatility memorizer, all there is the upper limit of read-write number of times each sector, will limit its access times under needs are read and write the application of Flash Rom in a large number.For example in hard disk manufacturing process; production line need be done the line signal attribute test between hard disk and the main frame; need do a large amount of read-write operations with the signal quality of measurement circuit when the high load capacity this moment to hard disk, can use Flash Rom to replace hard disk usually and test.In order to prolong the serviceable life of each Flash Rom, to reach its maximum utility, traditional method normally utilizes random number to read and write the different sectors of Flash Rom, come as far as possible on average use each sector.
Once be exposed in the U.S. the 6th of bulletin on April 7th, 2002 about the supporting technology that prolongs non-volatility memorizer serviceable life, 385, No. 078 patent, its patent name are " FerroelectricRandom Access Memory Device and Method for Controlling Read/WriteOperations Thereof (device and method of control electronic memory read-write operation) ".This patent has disclosed a kind of address translation circuit for detecting and has generated a pulse signal, this pulse signal is corresponding with a column address that is locked by the address lock-in circuit, id signal produces circuit generation one can use id signal with the corresponding chip of inside chip available signal, delay circuit postpones this pulse signal in the given time, make simultaneously in time delay, the inside chip available signal can not use, id signal produces circuit can not use chip with id signal, thereby stop the write operation of misreading, improved the reliability of read-write electronic memory.
Above-mentioned technical deficiency be in, because non-volatility memorizer has the restriction of read-write number of times, whole storage space often can not on average use, after using certain number of times, just will lose its memory function, misread write operation and above-mentioned technology can only stop that spiking produces to what electronic memory carried out, can not make whole storer be used prolonging its serviceable life, so the user can't use same storer for a long time by average.The number of times that another kind of random number method may make some sector of volatile storage be read and write is more, and the number of times that some sector is read and write is less, can't guarantee that also its each sector is on average used.
For overcoming the deficiency of above-mentioned prior art, the invention provides a kind of non-volatility memorizer device and method in serviceable life that prolongs, it can guarantee average data being write in each sector of energy when the read-write non-volatility memorizer, guarantee that each sector all can be used the upper limit that can be read and write number of times, thereby prolonged the serviceable life of non-volatility memorizer.
[summary of the invention]
Fundamental purpose of the present invention is to provide a kind of non-volatility memorizer device in serviceable life that prolongs, it can be guaranteed can average being written in each sector data during non-volatility memorizer in read-write, thereby guarantee that each sector all can be used the upper limit that can be read and write number of times, to prolong the serviceable life of non-volatility memorizer.
Another object of the present invention is to provide a kind of non-volatility memorizer method in serviceable life that prolongs, it can be guaranteed can average being written in each sector data during non-volatility memorizer in read-write, thereby guarantee that each sector all can be used the upper limit that can be read and write number of times, to prolong the serviceable life of non-volatility memorizer.
For reaching the foregoing invention purpose, the invention provides a kind of non-volatility memorizer device in serviceable life that prolongs, comprise a non-volatility memorizer and a main frame.Described non-volatility memorizer is divided to divide a plurality of sectors on physical logic, and its each sector is used to store the data of a sector mark and required storage thereof.Described sector mark adopts two kinds of marks respectively, and a kind of is mark x, and another kind is mark y, all is to be used to indicate the sector whether to have write data.Described main frame comprises: a data reading-writing module is used for the data of described non-volatility memorizer is read and write operation; One sector mark writing module is used for writing in each sector a sector mark; One sector mark is checked module, is used for checking the sector mark of each sector, thereby makes the data reading-writing module judge which sector to begin to write data from, and makes the sector mark writing module judge that any sector mark of use writes in the sector; One data reading-writing pointer is used for seeking the data that need write and sector mark thereof the position to which sector during non-volatility memorizer in read-write.
The invention provides a kind of non-volatility memorizer method in serviceable life that prolongs, it can make each sector of read-write one non-volatility memorizer that a main frame can be average, this method comprises the steps: that (a) finds sector also unmarked y of both unmarked x in last sector No. 0 when main frame, then the data reading-writing module writes data No. 0 sector, and the sector mark writing module writes mark x in No. 0 sector; (b) find all underlined x in the i sector, No. 0 sector to the when main frame, and do not have mark x in the i+1 sector, then the data reading-writing module writes data in the i+1 sector, and the sector mark writing module writes mark x in the i+1 sector; (c) find all underlined x in the N-1 sector, No. 0 sector to the when main frame, then the data reading-writing module writes data No. 0 sector, and the sector mark writing module writes mark y in No. 0 sector; (d) find all underlined y in the i sector, No. 0 sector to the when main frame, and do not have mark y in the i+1 sector, then the data reading-writing module writes data in the i+1 sector, and the sector mark writing module writes mark y in the i+1 sector; And (e) find all underlined y in No. 0 sector to the N-1 sector when main frame, and then the data reading-writing module writes data No. 0 sector, and the sector mark writing module writes mark x in No. 0 sector.Above-mentioned i is the numbering of sector, and N is the total number in sector.
Prolong the non-volatility memorizer device and method in serviceable life by the present invention, can make main frame from the sector of non-volatility memorizer, read and write two kinds of different sector marks respectively, discern and which sector to begin to write data from, thereby guarantee when writing data to non-volatility memorizer can be average each sector that uses, guarantee that each sector all can be used the upper limit that can be read and write number of times, prolong the serviceable life of non-volatility memorizer.
[description of drawings]
Fig. 1 is the hardware chart that the present invention prolongs the device in non-volatility memorizer serviceable life.
Fig. 2 is that the present invention prolongs the non-volatility memorizer method flow diagram in serviceable life.
Fig. 3 is the device and method that utilizes the present invention to prolong non-volatility memorizer serviceable life writes data in the sector a synoptic diagram.
[embodiment]
As shown in Figure 1, be the hardware chart that the present invention prolongs the device in non-volatility memorizer serviceable life.The device in this prolongation non-volatility memorizer serviceable life comprises a non-volatility memorizer 1 and a main frame 2.Wherein, non-volatility memorizer 1 is divided to divide N sector 10 on physical logic, each sector 10 be denoted as respectively No. 0 sector, No. 1 sector ..., the i sector ..., and N-1 sector, its each sector 10 is used to store the data of a sector mark and required storage thereof.Described sector mark is used to guarantee main frame 2 average each sector 10 of read-write of energy when read-write non-volatility memorizer 1, adopts mark x and mark y to represent two kinds of different sector marks in the present embodiment.This main frame 2 comprises a data reading-writing module 20, a sector mark writing module 21, sector mark inspection module 22 and a data reading-writing pointer 23.Wherein, data reading-writing module 20 is used for the data of non-volatility memorizer 1 is read and write operation; Sector mark writing module 21 is used in each sector 10 and writes a sector mark, its sector mark writes rule: when data reading-writing module 20 when odd number time writes sector 10, then sector mark writing module 21 writes mark x in sector 10, when data reading-writing module 20 when even number time writes sector 10, then sector mark writing module 21 writes mark y in sector 10; Sector mark checks that module 22 is used for checking the sector mark of each sector 10, thereby judge data reading-writing module 20 should begin to write data from which sector 10, and judge that sector mark writing module 21 should use any sector mark to write in the sector 10; Data reading-writing pointer 23 is used for when read-write non-volatility memorizer 1, and seeking needs to write data and sector mark in which sector 10.
As shown in Figure 2, be that the present invention prolongs the non-volatility memorizer method flow diagram in serviceable life.Main frame 2 initialization one variable i=0, wherein " i " represents sector number, promptly main frame 2 makes data reading-writing pointer 23 point to the position (step S100) of No. 0 sector.Sector mark is checked the mark (step S101) of module 22 inspection i sectors, and judges whether comprise mark x (step S102) in this i sector.If comprise mark x in the i sector, then main frame 2 is done the i=i+1 computing, and promptly main frame 2 makes data reading-writing pointer 23 point to 10 positions, next sector (step S105); If do not comprise mark x in the i sector, then sector mark checks module 22 judges whether comprise mark y (step S103) in this i sector.If comprise mark y in this i sector, then main frame 2 is done the i=i+1 computing, and promptly main frame 2 makes data reading-writing pointer 23 point to 10 positions, next sector (step S112); If do not comprise mark y in this i sector, then data reading-writing module 20 writes data in this i sector, and sector mark writing module 21 writes mark x (step S104) in this i sector.
Accept above-mentioned steps S105, main frame 2 continues to judge whether i equals N, and wherein N is the total number in sector of non-volatility memorizer 2, judges promptly whether the i sector is last sector 10 (step S106).If i equals N, then main frame 2 removing i are " 0 ", be that data reading-writing pointer 23 points to No. 0 sector position (step S107), then data reading-writing module 20 writes data in No. 0 sector, and sector mark writing module 21 writes sector mark y (step S108) in No. 0; If i is not equal to N (being that i is less than N), then sector mark is checked the mark (step S109) of module 22 these i sectors of inspection, and judges whether comprise mark x (step S110) in this i sector.If comprise mark x in the i sector, then turn to step S105; If do not comprise mark x in the i sector, then data reading-writing module 20 writes data in this i sector, and sector mark writing module 21 writes mark x (step S111) in this i sector.
Accept above-mentioned steps S112, main frame 2 continues to judge whether i equals N, judges promptly whether the i sector is last sector 20 (step S113).If i equals N, then main frame 2 removing i are " 0 ", be that data reading-writing pointer 23 points to No. 0 sector position (step S114), then data reading-writing module 20 writes data in No. 0 sector, and sector mark writing module 21 writes sector mark x (step S115) in No. 0; If i is not equal to N (being that i is less than N), then sector mark is checked the mark (step S116) of module 22 these i sectors of inspection, and judges whether comprise mark y (step S117) in this i sector.If comprise mark y in the i sector, then turn to step S112; If do not comprise mark y in the i sector, then data reading-writing module 20 writes data in this i sector, and sector mark writing module 21 writes mark y (step S118) in this i sector.
As shown in Figure 3, be the device and method that utilizes the present invention to prolong non-volatility memorizer serviceable life writes data in the sector synoptic diagram.When main frame 2 writes data in non-volatility memorizer 1, need to check the sector mark in the sector 10, judge write data in which sector 10 again, and judge and use any sector mark to write in the sector 10.Below lift an example of making Test Application with Flash Rom (non-volatility memorizer) the non-volatility memorizer of the present invention device and method in serviceable life is described, generally can there be following five kinds of situations in it:
Fig. 3 (a) is an all unmarked situation in the N-1 sector, No. 0 sector to the of non-volatility memorizer 1.Check module 22 when the sector mark of main frame 2 and find the also unmarked y of both unmarked x in the N-1 sector, No. 0 sector to the, then data reading-writing module 20 writes data No. 0 sector, and sector mark writing module 21 writes mark x in No. 0 sector.
Fig. 3 (b) is the situation that comprises mark x in the i sector, No. 0 sector to the of non-volatility memorizer 1.Check module 22 when the sector mark of main frame 2 and find all underlined x in the i sector, No. 0 sector to the, and there is not mark x in the i+1 sector, then data reading-writing module 20 writes data in the i+1 sector, and sector mark writing module 21 writes mark x in the i+1 sector.
Fig. 3 (c) is the situation that all comprises mark x in the N-1 sector, No. 0 sector to the of non-volatility memorizer 1.Check module 22 when the sector mark of main frame 2 and find all underlined x in the N-1 sector, No. 0 sector to the, then data reading-writing module 20 writes data No. 0 sector, and sector mark writing module 21 writes mark y in No. 0 sector.
It as Fig. 3 (d) situation that comprises mark y in the i sector, No. 0 sector to the of non-volatility memorizer 1.Check module 22 when the sector mark of main frame 2 and find all underlined y in the i sector, No. 0 sector to the, and there is not mark y in the i+1 sector, then data reading-writing module 20 writes data in the i+1 sector, and sector mark writing module 21 writes mark y in the i+1 sector.
(e) of the 3rd figure is the situation that all comprises mark y in the N-1 sector, No. 0 sector to the of non-volatility memorizer 1.Check module 22 when the sector mark of main frame 2 and find all underlined y in the N-1 sector, No. 0 sector to the, then data reading-writing module 20 writes data No. 0 sector, and sector mark writing module 21 writes mark x in No. 0 sector.
Claims (11)
1. one kind prolongs the non-volatility memorizer device in serviceable life, it is characterized in that, can make each sector of the average read-write of a main frame one non-volatility memorizer, wherein:
Described non-volatility memorizer is divided to divide a plurality of sectors on physical logic, and its each sector is used to store the data of a sector mark and required storage thereof;
Described main frame comprises:
The data reading-writing module is used for the data of described non-volatility memorizer is read and write operation;
The sector mark writing module is used for writing in each sector a sector mark;
Sector mark is checked module, is used for checking the sector mark of each sector;
The data reading-writing pointer when being used for main frame read-write non-volatility memorizer, is sought the data that writes and the sector mark position to the sector.
2. the device in prolongation non-volatility memorizer as claimed in claim 1 serviceable life is characterized in that described sector mark has two kinds: a kind ofly be mark x, another kind is mark y, all is to be used to indicate the sector whether to have write data.
3. the device in prolongation non-volatility memorizer as claimed in claim 2 serviceable life, it is characterized in that, sector mark writes rule: when the data reading-writing module when odd number time writes the sector, the sector mark writing module then writes mark x in the sector, when the data reading-writing module when even number time writes the sector, the sector mark writing module then writes mark y in the sector.
4. one kind prolongs the non-volatility memorizer method in serviceable life, it is characterized in that, can make each sector of the average read-write non-volatility memorizer of a main frame, and the method in this prolongation non-volatility memorizer serviceable life comprises the steps:
Since No. 0 sector,, check its sector mark respectively until the i sector;
Judge and whether comprise mark x in the i sector;
If comprise mark x in the i sector, then judge the mark of i+1 sector;
If do not comprise mark x in the i sector, then judge in this i sector whether comprise mark y;
If do not comprise mark y in this i sector, then in this i sector, write data and sector mark x thereof.
5. the method in prolongation non-volatility memorizer as claimed in claim 4 serviceable life is characterized in that, and is described if comprise mark x in the i sector, judges that then the step of i+1 sector mark also comprises the steps:
Judge whether the i+1 sector is last sector;
If the i+1 sector is last sector, then in No. 0 sector, write data and sector mark y;
If the i+1 sector is not last sector, then judge in this i+1 sector whether comprise mark x;
If comprise mark x in the i+1 sector, then judge the mark of next sector;
If do not comprise mark x in the i+1 sector, then in this i+1 sector, write data and sector mark x.
6. the method in prolongation non-volatility memorizer as claimed in claim 4 serviceable life is characterized in that, and is described if comprise mark y in the i sector, judges that then the step of i+1 sector mark also comprises the steps:
Judge whether the i+1 sector is last sector;
If the i+1 sector is last sector, then in No. 0 sector, write data and sector mark x;
If the i+1 sector is not last sector, then judge in this i+1 sector whether comprise mark y;
If comprise mark y in the i+1 sector, then judge the mark of next sector again;
If do not comprise mark y in the i+1 sector, then in this i+1 sector, write data and sector mark y.
7. as the described prolongation non-volatility memorizer of claim 4,5 or 6 method in serviceable life, it is characterized in that described i is the numbering of sector, it is a natural number.
8. as the described prolongation non-volatility memorizer of claim 4,5 or 6 method in serviceable life, it is characterized in that described mark x and mark y are two kinds of different sector marks, it all is used to indicate the sector and whether has write data.
9. one kind prolongs the non-volatility memorizer method in serviceable life, it is characterized in that, can make each sector of the average read-write of a main frame one non-volatility memorizer, and this method comprises the steps:
Find sector also unmarked y of both unmarked x in last sector No. 0 when main frame, then write data and mark x No. 0 sector;
When main frame is found all underlined x in the i sector, No. 0 sector to the, and do not have mark x in the i+1 sector, then write data and mark x in the i+1 sector;
Find all underlined x in No. 0 sector to last sector when main frame, then write data and mark y No. 0 sector;
When main frame is found all underlined y in the i sector, No. 0 sector to the, and do not have mark y in the i+1 sector, then write data and mark y in the i+1 sector;
Find all underlined y in No. 0 sector to last sector when main frame, then write data and mark x No. 0 sector.
10. as the described prolongation non-volatility memorizer of claim 9 method in serviceable life, it is characterized in that described i is the numbering of sector, it is a natural number.
11. as the described prolongation non-volatility memorizer of claim 9 method in serviceable life, it is characterized in that described mark x and mark y are two kinds of different sector marks, it all is used to indicate the sector and whether has write data.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200410052510XA CN100345123C (en) | 2004-11-27 | 2004-11-27 | Device and method for delaying nonvolatile memory using life |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200410052510XA CN100345123C (en) | 2004-11-27 | 2004-11-27 | Device and method for delaying nonvolatile memory using life |
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| CN1779661A true CN1779661A (en) | 2006-05-31 |
| CN100345123C CN100345123C (en) | 2007-10-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB200410052510XA Expired - Fee Related CN100345123C (en) | 2004-11-27 | 2004-11-27 | Device and method for delaying nonvolatile memory using life |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101751225B (en) * | 2008-12-04 | 2011-12-14 | 上海华虹Nec电子有限公司 | Data access method of hybrid hard drive |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5598540A (en) * | 1992-09-30 | 1997-01-28 | Texas Instruments Incorporated | Memory module including read-write memory and read-only configuration memory accessed only sequentially and computer system using at least one such module |
| JPH0831190A (en) * | 1994-07-19 | 1996-02-02 | Nkk Corp | Non-volatile semiconductor memory device |
| JPH0954726A (en) * | 1995-08-18 | 1997-02-25 | Mitsubishi Electric Corp | Memory device |
| JP3718578B2 (en) * | 1997-06-25 | 2005-11-24 | ソニー株式会社 | Memory management method and memory management device |
| CN1351350A (en) * | 2000-10-27 | 2002-05-29 | 岳京星 | Method for partitioning memory block and identifying R/W information in flash memory |
| CN1362708A (en) * | 2001-01-02 | 2002-08-07 | 吴秀林 | Read-write method for flash memory chip |
| JP3692313B2 (en) * | 2001-06-28 | 2005-09-07 | 松下電器産業株式会社 | Nonvolatile memory control method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101751225B (en) * | 2008-12-04 | 2011-12-14 | 上海华虹Nec电子有限公司 | Data access method of hybrid hard drive |
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