CN1767091A - RF solenoid micro-inductor based on micro electro-mechanical system - Google Patents
RF solenoid micro-inductor based on micro electro-mechanical system Download PDFInfo
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- CN1767091A CN1767091A CN 200510029317 CN200510029317A CN1767091A CN 1767091 A CN1767091 A CN 1767091A CN 200510029317 CN200510029317 CN 200510029317 CN 200510029317 A CN200510029317 A CN 200510029317A CN 1767091 A CN1767091 A CN 1767091A
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Abstract
The invention relates to a radio-frequency follow-up coil micro inductance based on micro Electro-Me-Chemical System in the field of microelectronics technology. It comprises: a glass substrate, an interlock, a coil, a platform wave guiding line and an insulating material, wherein the platform wave guiding line is positioned on the glass substrate; the bottom layer coil, the platform wave guiding line are positioned on the platform of the glass substrate; the coil is formed by connecting the bottom layer coil with a top layer coil; the bottom layer coil, the top layer coil, the coil and the platform wave guiding line and the interlock are insulated by air.
Description
Technical field
What the present invention relates to is a kind of device of microelectronics technology, specifically is the little inductance of a kind of RF solenoid based on MEMS (micro electro mechanical system).
Background technology
RF-MEMS (radio frequency-MEMS (micro electro mechanical system)) device is the new research field of MEMS (micro electro mechanical system) (MEMS) technology appearance in recent years, be that RF-MEMS utilizes various radio-frequency devices or the systems that are used for radio communication of MEMS fabrication techniques, these RF-MEMS devices and system can be widely used in interspace wireless telecommunications, advanced mobile communication such as mobile phone, global position system GPS, microwave radar antenna etc.Because the RF-MEMS device has many superiority, and can realize that finally the height of passive device and IC is integrated, make the development of the system integrated chip (SOC) of the collection that integrates information, processing, propagation etc. become possibility.Current fast development and Limited resources thereof along with wireless communication technology, press for the control assembly that has high-quality-factor, high self-resonant frequency and low insertion loss under the radio frequency such as inductance, electric capacity, this is one of key element of realizing by high performance microwave/millimetre-wave circuit, RF filter, RF oscillator, RF resonator etc.For improving the quality factor and the inductance value of little inductance under the radio frequency, little inductance of three-dimensional hollow core structures is the trend of development.But adopt common IC technology, be difficult in little inductance of development three-dimensional structure on the plane substrate.Adopt the little inductance of MEMS technology development three-dimensional structure to arise at the historic moment, the MEMS technology provides a brand-new approach for little inductance of realizing small size, in light weight, big inductance quantity, high-quality-factor.
Find through literature search prior art, people such as Kim are at " IEEE TRANSACTION ONCOMPONENTS, PACKAGING, AND MANUFACTURING TECHNOLOGY " (U.S. electric electronic engineering association magazine) (VOL.21, NO.1, pp.26-33, JANUARY, 1998) delivered " Surfacemicromachined solenoid inductors for high frequency appl ications " (the little inductance of surface micro solenoid of frequency applications) literary composition on, this article has been mentioned the little inductance of high frequency solenoid of surface micro, this little inductance is by alumina substrate, the unsettled pillar and the solenoid of hollow are formed, the solenoid of hollow is by bottom coil, top layer coil and bonding conductor are formed, the solenoid of hollow is by above being positioned at alumina substrate at the pillar on the alumina substrate tens microns, it is a kind of little inductance of high frequency solenoid of hanging type, the author adopts conventional photoetching technique, wet chemical etching metal A l, Cr, Cu film and reactive ion etching (RIE) technology etching polyimide foam insulation has successfully been developed the little inductance of hollow core structures solenoid of hanging type.Owing in manufacturing process, use wet chemical etching mask Al material and bottom Cr/Cu/Cr, unavoidably bring the undercutting phenomenon to coil.And in manufacture process, repeatedly using RIE etching insulating material, oxygen causes the oxidation of metal easily, influences the performance of device.
Summary of the invention
The objective of the invention is at deficiency of the prior art, provide a kind of RF solenoid little inductance based on MEMS (micro electro mechanical system), make it have characteristics such as low cost, low resistance, high inductance, high-quality-factor and high efficiency, low-loss, mass, can be widely used in interspace wireless telecommunications, advanced mobile communication such as mobile phone, global position system GPS, microwave radar antenna etc.
The present invention is achieved by the following technical solutions, the little inductance of RF solenoid based on MEMS (micro electro mechanical system) of the present invention comprises: glass substrate, pin, coil, the plane wave lead, insulating material, insulating material, plane wave lead and pin are arranged on the glass substrate, coil is set between pin, pin is connected with two end points of coil respectively, on the plane of glass substrate, bottom coil is set, the plane wave lead, coil is by bottom coil, top layer coil is connected to form by bonding conductor, between bottom coil and the top layer coil, separate by insulating material between coil and plane wave lead and the pin.
The plane wave lead is arranged on the both sides on every side of pin, and the height of pin is on the plane of top layer coil.
When the little inductance of the RF solenoid based on MEMS (micro electro mechanical system) of the present invention is made, adopt MEMS (micro electro mechanical system) (MEMS) technology, the glass substrate that cleans up is handled, obtain the double-sided overlay alignment symbology, so that improve alignment precision during exposure; Adopt the photoresist mould of standard-LIGA technology and thick photoresist prepared coil and bonding conductor; Adopt electroplating technology to solve coil-winding and bonding conductor; Adopt polyimide material to do the planarization of insulating barrier and polishing technology solution substrate; Adopt physical method to remove the conductor of electroplating usefulness, the undercutting phenomenon of avoiding wet-etching technology to bring.
The present invention compared with prior art, has following useful effect: the little inductance of (1) RF solenoid of the present invention, it is 3-D solid structure, operating frequency is at radio frequency (2-5GHz), inductance value is greater than 1nH, quality factor is greater than 10, and size can be widely used in radio communication such as mobile phone, global position system GPS, microwave radar antenna etc. less than 2mm; (2) the little inductance of RF solenoid of the present invention has advantages such as operating frequency height, resistance that size is little, low, high inductance value, high-quality-factor, high efficiency, low-loss; (3) the little inductance of solenoid of the present invention can be integrated with prior integrated circuit process, constitutes the radio-frequency enabled module; (4) the little inductance of solenoid of the present invention adopts polyimides to do the insulation material, has improved evenness, uniformity and the rate of finished products of substrate in the device manufacturing process process; (5) the little inductance of solenoid of the present invention can be packaged into radio frequency SMD device; (6) the little inductance of solenoid of the present invention is to adopt thin film technique and the development of MEMS technology, and manufacturing technology can be compatible fully with lsi technology, is easy to production in enormous quantities and low cost etc.
Description of drawings
Fig. 1 is the little induction structure schematic diagram of the RF solenoid based on MEMS (micro electro mechanical system) of the present invention.
Fig. 2 is that Fig. 1 structure is along A-A directional profile schematic diagram.
Embodiment
As Fig. 1, shown in Figure 2, the little inductance of RF solenoid based on MEMS (micro electro mechanical system) of the present invention comprises: glass substrate 1, pin 2, solenoid coil 3, plane wave lead 4, insulating material 8, insulating material 8, plane wave lead 4 and pin 2 are arranged on the glass substrate 1, coil 3 is set between pin 2, pin 2 is connected with two end points of coil 3 respectively, bottom coil 5 is set on the plane of glass substrate 1, plane wave lead 4, coil 3 is by bottom coil 5, top layer coil 6 is connected to form by bonding conductor 7, between bottom coil 5 and the top layer coil 6, separate by insulating material 8 between coil 3 and plane wave lead 4 and the pin 2.
Insulated by polyimides 8 between bottom coil 5, top layer coil 6, the bonding conductor 7 in the solenoid coil 3, the conductor length and the number of turn are determined according to demand in the solenoid coil 3.Generally speaking, the conductor length of bottom coil 5 and top layer coil 6 is 150～400 μ m in the solenoid coil 3, and the number of turn is 7～10 circles, and inductance value is greater than 1nH under 2GHz～5GHz radio frequency, and quality factor is greater than 10.
The spatial form of bonding conductor 7 is a four prisms cylinder, highly is 40～50 μ m.
Claims (7)
1, the little inductance of a kind of RF solenoid based on MEMS (micro electro mechanical system), comprise: glass substrate (1), coil (3), it is characterized in that, also comprise: pin (2), plane wave lead (4), insulating material (8), insulating material (8), plane wave lead (4) and pin (2) are arranged on the glass substrate (1), coil (3) is set between pin (2), pin (2) is connected with two end points of coil (3) respectively, bottom coil (5) is set on the plane of glass substrate (1), plane wave lead (4), coil (3) is by bottom coil (5), top layer coil (6) is connected to form by bonding conductor (7), between bottom coil (5) and the top layer coil (6), separate by insulating material (8) between coil (3) and plane wave lead (4) and the pin (2).
2, the little inductance of the RF solenoid based on MEMS (micro electro mechanical system) as claimed in claim 1 is characterized in that, plane wave lead (4) is arranged on the both sides on every side of pin (2), and the height of pin (2) is on the plane of top layer coil (5).
3, the little inductance of the RF solenoid based on MEMS (micro electro mechanical system) as claimed in claim 1 is characterized in that, coil (3) be shaped as solenoid coil, the width of each circle conductor is 50～100 μ m, thickness is 5～10 μ m, is spaced apart 40 μ m between each circle.
4, the little inductance of the RF solenoid based on MEMS (micro electro mechanical system) as claimed in claim 1 is characterized in that, bottom coil (5) and top layer coil (6), the length of conductor is 150～400 μ m, the number of turn is 7～10 circles, and 2GHz under the radio frequency～the 5GHz inductance value is greater than 1nH, and quality factor is greater than 10.
5, the little inductance of the RF solenoid based on MEMS (micro electro mechanical system) as claimed in claim 1 is characterized in that, the spatial form of bonding conductor (7) is a four prisms cylinder, highly is 40～50 μ m.
6, the little inductance of the RF solenoid based on MEMS (micro electro mechanical system) as claimed in claim 1 is characterized in that, is insulated by insulating material (8) between bottom coil (5), top layer coil (6), the bonding conductor (7).
7, as claim 1 or the little inductance of 6 described RF solenoids, it is characterized in that insulating material (8) is a polyimide material based on MEMS (micro electro mechanical system).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510029317 CN1767091A (en) | 2005-09-01 | 2005-09-01 | RF solenoid micro-inductor based on micro electro-mechanical system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510029317 CN1767091A (en) | 2005-09-01 | 2005-09-01 | RF solenoid micro-inductor based on micro electro-mechanical system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1767091A true CN1767091A (en) | 2006-05-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510029317 Pending CN1767091A (en) | 2005-09-01 | 2005-09-01 | RF solenoid micro-inductor based on micro electro-mechanical system |
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| Country | Link |
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| CN (1) | CN1767091A (en) |
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- 2005-09-01 CN CN 200510029317 patent/CN1767091A/en active Pending
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