CN1767090A - Hollow structure RF solenoid micro-inductor - Google Patents
Hollow structure RF solenoid micro-inductor Download PDFInfo
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- CN1767090A CN1767090A CN 200510029315 CN200510029315A CN1767090A CN 1767090 A CN1767090 A CN 1767090A CN 200510029315 CN200510029315 CN 200510029315 CN 200510029315 A CN200510029315 A CN 200510029315A CN 1767090 A CN1767090 A CN 1767090A
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Abstract
The invention relates to an empty stomach radio-frequency follow-up coil micro-inductor which is formed by a substrate, an interlock, a spiral line coil and a platform wave guiding line, wherein the spiral line coil is positioned on the substrate; the platform wave guiding line is around the substrate; the spiral line coil is formed by a bottom layer coil connecting with a top layer coil which by connecting conductor; the two ends of the spiral line coil area connected with the interlock; the bottom layer coil, the top layer coil and the connecting conductor of spiral line coil are insulated by air.
Description
Technical field
What the present invention relates to is a kind of device of microelectronics technology, specifically is a kind of hollow structure RF solenoid micro-inductor based on MEMS (micro electro mechanical system).
Background technology
RF-MEMS (radio frequency-MEMS (micro electro mechanical system)) device is the new research field of MEMS (micro electro mechanical system) (MEMS) technology appearance in recent years, be that RF-MEMS utilizes various radio-frequency devices or the systems that are used for radio communication of MEMS fabrication techniques, these RF-MEMS devices and system can be widely used in interspace wireless telecommunications, advanced mobile communication such as mobile phone, global position system GPS, microwave radar antenna etc.Because the RF-MEMS device has many superiority, and can realize that finally the height of passive device and IC is integrated, make the development of the system integrated chip (SOC) of the collection that integrates information, processing, propagation etc. become possibility.Current fast development and Limited resources thereof along with wireless communication technology, press for the control assembly that has high-quality-factor, high self-resonant frequency and low insertion loss under the radio frequency such as inductance, electric capacity, this is one of key element of realizing by high performance microwave/millimetre-wave circuit, RF filter, RF oscillator, RF resonator etc.For improving the quality factor and the inductance value of little inductance under the radio frequency, little inductance of three-dimensional hollow core structures is the trend of development.But adopt common IC technology, be difficult in little inductance of development three-dimensional structure on the plane substrate.Adopt the little inductance of MEMS technology development three-dimensional structure to arise at the historic moment, the MEMS technology provides a brand-new approach for little inductance of realizing small size, in light weight, big inductance quantity, high-quality-factor.
Find through literature search prior art, people such as Kim are at " IEEE TRANSACTION ONCOMPONENTS, PACKAGING, AND MANUFACTURING TECHNOLOGY " (U.S. electric electronic engineering association magazine) (VOL.21, NO.1, pp.26-33, JANUARY, 1998) delivered " Surface micromachined solenoid inductors for high frequencyapplications " (the little inductance of surface micro solenoid of frequency applications) literary composition on, this article has been mentioned the little inductance of high frequency solenoid of surface micro, this little inductance is by alumina substrate, the unsettled pillar and the solenoid of hollow are formed, the solenoid of hollow is by bottom coil, top layer coil and bonding conductor are formed, the solenoid of hollow is by above being positioned at alumina substrate at the pillar on the alumina substrate tens microns, it is a kind of little inductance of high frequency solenoid of hanging type, the author adopts conventional photoetching technique, wet chemical etching metal A l, Cr, Cu film and reactive ion etching (RIE) technology etching polyimide foam insulation has successfully been developed the little inductance of hollow core structures solenoid of hanging type.Owing in manufacturing process, use wet chemical etching mask Al material and bottom Cr/Cu/Cr, unavoidably bring the undercutting phenomenon to coil.And in manufacture process, repeatedly using RIE etching insulating material, oxygen causes the oxidation of metal easily, influences the performance of device.
Summary of the invention
The objective of the invention is at the deficiency of the prior art and the market demand, a kind of hollow structure RF solenoid micro-inductor is provided, make it have characteristics such as integrated, low-cost, low resistance, high inductance, high-quality-factor and high efficiency, low-loss, mass, can be widely used in interspace wireless telecommunications, advanced mobile communication such as mobile phone, global position system GPS, microwave radar antenna etc.
The present invention is achieved by the following technical solutions, hollow structure RF solenoid micro-inductor of the present invention is made up of substrate, hollow solenoid coil, pin, plane wave lead, plane wave lead and pin are arranged on the substrate plane, the plane wave lead is arranged on the both sides on every side of pin, the hollow solenoid coil is set between pin, and pin is connected with two end points of hollow solenoid coil respectively.The hollow solenoid coil is connected to form by bonding conductor by bottom coil and top layer coil, and bottom coil, top layer coil and bonding conductor separate by air, does not adopt any insulating material.
The manufacture method of hollow structure RF solenoid micro-inductor of the present invention adopts the MEMS technology, and the silicon chip of two-sided oxidation is handled, and obtains the double-sided overlay alignment symbology, so that improve alignment precision during exposure; Adopt the photoresist mould of standard-LIGA technology and thick photoresist prepared coil and bonding conductor; Adopt electroplating technology and polishing technology to solve coil-winding and bonding conductor; Adopt the physical etchings technology to remove the conductor of electroplating usefulness, the undercutting phenomenon of avoiding wet-etching technology to bring.
The present invention compared with prior art, has following useful effect: the little inductance of (1) hollow solenoid of the present invention, it is 3-D solid structure, operating frequency is at radio frequency (2-5GHz), inductance value is greater than 1nH, quality factor is greater than 10, and size can be widely used in radio communication such as mobile phone, global position system GPS, microwave radar antenna etc. less than 2mm; (2) the little inductance of solenoid of the present invention has advantages such as operating frequency height, resistance that size is little, low, high inductance value, high-quality-factor, high efficiency, low-loss; (3) the little inductance of solenoid of the present invention can be integrated with prior integrated circuit process, constitutes the radio-frequency enabled module; (4) the little inductance of solenoid of the present invention is to adopt thin film technique and the development of MEMS technology, and manufacturing technology can be compatible fully with lsi technology, is easy to production in enormous quantities and low cost etc.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Fig. 2 is that Fig. 1 structure is along A-A directional profile schematic diagram.
Embodiment
As shown in Figure 1, 2, the present invention is made up of substrate 1, pin 2, solenoid coil 3, plane wave lead 4, solenoid coil 3 is positioned on the substrate 1, around it is plane wave lead 4, solenoid coil 3 is connected to form by bonding conductor 7 by bottom coil 5, top layer coil 6, the two ends of solenoid coil 3 connect pin 2, and the bottom coil 5 of solenoid coil 3, top layer coil 6, bonding conductor 7 all separate by air insulation.
The spatial form of bonding conductor 7 is a four prisms cylinder, highly is 40～50 μ m.
Solenoid coil 3 be shaped as the hollow solenoid, the width of each circle conductor is 50～100 μ m, thickness is 5～10 μ m, is spaced apart 40 μ m between each circle.
The conductor length and the number of turn of bottom coil 5 and top layer coil 6 are determined according to demand in the coil 3.Generally speaking, the conductor length of bottom coil 5 and top layer coil 6 is 150～400 μ m in the coil 3, and the number of turn is 7～10 circles, and (2GHz～5GHz) inductance value is greater than 1nH, and quality factor is greater than 10 under the radio frequency.
Plane wave lead 4 and pin 2 are arranged on substrate 1 plane, and plane wave lead 4 is arranged on the both sides on every side of pin 2.
Claims (6)
1, a kind of hollow structure RF solenoid micro-inductor, comprise: substrate (1), solenoid coil (3), it is characterized in that, also comprise: pin (2), plane wave lead (4), solenoid coil (3) is positioned on the substrate (1), around it is plane wave lead (4), solenoid coil (3) is connected to form by bonding conductor (7) by bottom coil (5), top layer coil (6), the two ends of solenoid coil (3) connect pin (2), and the bottom coil (5) of solenoid coil (3), top layer coil (6), bonding conductor (7) all separate by air insulation.
2, hollow structure RF solenoid micro-inductor as claimed in claim 1 is characterized in that, the width of each circle conductor of solenoid coil (3) is 50～100 μ m, and thickness is 5～10 μ m, is spaced apart 40 μ m between each circle.
3, hollow structure RF solenoid micro-inductor as claimed in claim 1 is characterized in that, the spatial form of bonding conductor (7) is a four prisms cylinder, highly is 40～50 μ m.
4, as claim 1 or 2 described hollow structure RF solenoid micro-inductors, it is characterized in that, solenoid coil (3) be shaped as the hollow solenoid.
5, hollow structure RF solenoid micro-inductor as claimed in claim 1, it is characterized in that the conductor length of bottom coil (5) and top layer coil (6) is 150～400 μ m, the number of turn is 7～10 circles, inductance value is greater than 1nH under 2GHz～5GHz radio frequency, and quality factor is greater than 10.
6, hollow structure RF solenoid micro-inductor as claimed in claim 1 is characterized in that, plane wave lead (4) and pin (2) are arranged on substrate (1) plane, and plane wave lead (4) is arranged on the both sides on every side of pin (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510029315 CN1767090A (en) | 2005-09-01 | 2005-09-01 | Hollow structure RF solenoid micro-inductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510029315 CN1767090A (en) | 2005-09-01 | 2005-09-01 | Hollow structure RF solenoid micro-inductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1767090A true CN1767090A (en) | 2006-05-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510029315 Pending CN1767090A (en) | 2005-09-01 | 2005-09-01 | Hollow structure RF solenoid micro-inductor |
Country Status (1)
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| CN (1) | CN1767090A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101494112B (en) * | 2008-01-25 | 2011-06-08 | 台湾积体电路制造股份有限公司 | Method of manufacturing a coil inductor |
| CN106817103A (en) * | 2016-12-19 | 2017-06-09 | 北京航天微电科技有限公司 | A kind of micromechanics tunable filter |
-
2005
- 2005-09-01 CN CN 200510029315 patent/CN1767090A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101494112B (en) * | 2008-01-25 | 2011-06-08 | 台湾积体电路制造股份有限公司 | Method of manufacturing a coil inductor |
| TWI394186B (en) * | 2008-01-25 | 2013-04-21 | Taiwan Semiconductor Mfg | A method of manufacturing a coil inductor |
| CN106817103A (en) * | 2016-12-19 | 2017-06-09 | 北京航天微电科技有限公司 | A kind of micromechanics tunable filter |
| CN106817103B (en) * | 2016-12-19 | 2023-08-04 | 北京航天微电科技有限公司 | Micro-mechanical adjustable filter |
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