CN1758449A - Semiconductor light-emitting componnoet with brightness increasing and manufacturing method thereof - Google Patents
Semiconductor light-emitting componnoet with brightness increasing and manufacturing method thereof Download PDFInfo
- Publication number
- CN1758449A CN1758449A CNA2004100849217A CN200410084921A CN1758449A CN 1758449 A CN1758449 A CN 1758449A CN A2004100849217 A CNA2004100849217 A CN A2004100849217A CN 200410084921 A CN200410084921 A CN 200410084921A CN 1758449 A CN1758449 A CN 1758449A
- Authority
- CN
- China
- Prior art keywords
- semiconductor
- substrate
- electrode
- layer
- conducting layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Led Devices (AREA)
Abstract
This invention provides a semiconductor element increasing brightness and its manufactured method, in which, the element includes a substrate, a passivation layer, a material containing a metallic alloy, a metallic oxide, a metallic nitride, an organic material, an inorganic material or a combined material of them, a reflection layer, a first semiconductor conductive layer, a multi-layer quanta trap structure layer and a second semiconductor conductive layer, in which, said substrate has good conductivity and heat conduction.
Description
Technical field
The present invention relates to one and have the semiconductor light-emitting elements and the manufacture method thereof of promoting brightness, particularly relate to one and have the LED element of promoting brightness and the method for making this LED element thereof.
Background technology
(light emitting diode, LED) since the appearance, along with its performance is constantly improved, the scope of application is also constantly increasing since light-emitting diode.From early stage optical display, until communication device, medical treatment device, even in order to replace traditional lighting device.But, how to promote the brightness of light-emitting diode, be very important problem in this research and development field always.The brightness of element can't infinitely increase along with the increase of electric current, but is subject to the factor of saturated electric current in elder generation's element in the sky.
In influencing brightness all multifactor, the thermal diffusivity of size of component and element is being played the part of critical influence power.Under identical light-emitting area condition, component size is littler, and total brightness will heal greatly in theory.In addition,, not only can increase useful life, also its application can be extended in the product of paramount electric current demand if element itself has good thermal diffusivity.
Taiwan patent announcement number 00567618 discloses a kind of light-emitting diode and method for making thereof with bonding reflector in the denomination of invention " light-emitting diode and method for making thereof with bonding reflector ".By a transparent bonding layer one light-emitting diode and a metallic reflector are bonded together, can be used to improve the brightness of light-emitting diode.
Give Taiwan letters patent book number 149911 invention " with the semiconductor component surfaces alligatoring to promote the method for external quantum efficiency " of same Applicant of the present invention, wherein propose a surface through control growth temperature and the compound semiconductor light-emitting device of alligatoring.For the light-emitting component of aluminum indium nitride gallium series, the effect that this invention obtains with respect to control group, can make brightness promote more than 40%.But and not mentioned improvement on component size or thermal diffusivity.
Therefore, promote brightness and have the semiconductor element and the method for making thereof of good thermal diffusivity, the demand that just can give the outstanding brightness of traditional light-emitting diode, useful life and satisfy the strictness of high electric current product if can provide a kind of.
Summary of the invention
One of the object of the invention is to provide a kind of semiconductor element of promoting brightness that has.Owing to have less component size, under identical light-emitting area condition, total brightness will increase in theory.
Another object of the present invention is to provide a kind of semiconductor element of promoting brightness that has.Because element itself has good thermal diffusivity, so increased the useful life of element.
Another purpose of the present invention is promptly providing a kind of semiconductor element of promoting brightness that has.Because element itself has good thermal diffusivity, in the very suitable product that is applied in high electric current demand.Thus the semiconductor element that method obtained have less component size, long useful life, be more suitable for being applied in the product of high electric current demand.
So the present invention discloses the semiconductor element that a kind of tool is promoted brightness, comprising:
One substrate (substrate) has good electrical conductivity and thermal conductivity;
One protective layer (passivation layer) is positioned on this substrate, and this protective layer comprises by a material that is selected from an alloy, monoxide, mononitride or its combination and being formed;
One reflector is positioned on this protective layer, and an electromagnetic wave is had high reflectance;
One first semiconductor conducting layer is positioned on this reflector;
One multi layer quantum well structure sheaf is positioned on this first semiconductor conducting layer; With
One second semiconductor conducting layer is positioned on this multi layer quantum well structure sheaf.
In addition, the present invention still discloses a kind of method of making semiconductor light emitting component, comprises the following steps:
(a) provide one first substrate, have conductivity and thermal conductivity;
(b) form one first semiconductor conducting layer, be positioned on this first substrate;
(c) form a multi layer quantum well structure sheaf, be positioned on this first semiconductor conducting layer;
(d) form one second semiconductor conducting layer, be positioned on this multi layer quantum well structure sheaf;
(e) form a reflector, be positioned on this second semiconductor conducting layer, this reflector has high reflectance to an electromagnetic wave;
(f) form a protective layer, be positioned on this reflector, this protective layer is made up of a material that is selected from an alloy, monoxide, mononitride or its combination;
(g) form one second substrate, be positioned on this protective layer, this second substrate has conductivity and the thermal conductivity that is higher than this first substrate; With
(h) remove this first substrate.
Description of drawings
Fig. 1 promotes the structural representation of brightness semiconductor element for the present invention;
Fig. 2 promotes in the brightness semiconductor element for the present invention, when protective layer is conduction, and the schematic diagram of electrode position;
Fig. 3 promotes in the brightness semiconductor element for the present invention, when protective layer when being non-conductive, and the schematic diagram of electrode position;
Fig. 4 promotes a preferred embodiment structural representation of brightness semiconductor element for the present invention;
Fig. 5 A to 5C discloses the generalized section that the inventive method is made the semiconductor light emitting component process;
Fig. 6 is in the prepared semiconductor light-emitting elements of method constructed in accordance, when protective layer is conduction, and the schematic diagram of electrode position; And
Fig. 7 is in the prepared semiconductor light-emitting elements of method constructed in accordance, when protective layer when being non-conductive, and the schematic diagram of electrode position.
The simple symbol explanation
1 first substrate, 10 substrates
11,41,63 first electrodes, 12 second substrates
13,43,61 second electrode 20 protective layers
30 reflector, 40,62 first semiconductor conducting layers
50 multi layer quantum well structure sheafs, 42,60 second semiconductor conducting layers
70 transparency conducting layers, 80 adhesive linkages
Embodiment
By the graphic and following explanation of reference the present invention, those skilled in the art can be more readily understood and grasp each details of the present invention with institute's attendant advantages.Yet, it will be understood by a person skilled in the art that protection scope of the present invention is not limited only to the particular instantiation in the specification.
In method of the present invention, be based upon each layer material on the base material, can carry out via the method that those skilled in the art knew, for example organic gas molecule in space deposition (MOCVD), molecular beam epitaxy growth (molecular beam epitaxy, MBE) technology, hydride gas-phase epitaxy growth (hydride vaporphase epitaxy, HVPE) technology, liquid extension (LPE) or vapour deposition method.And layer is reached with the available bond method (eutectic bonding) of melting altogether of engaging of interlayer.
The present invention at first relates to one and has the semiconductor element of promoting brightness; its structure comprises as shown in Figure 1: a substrate 10, a protective layer 20, a reflector 30, one first semiconductor conducting layer 40, a multi layer quantum well structure sheaf 50, with one second semiconductor conducting layer 60.
Substrate 10 in the said structure, preferably have good electrical conductivity and thermal conductivity, for instance, the conductivity and the thermal conductivity that are higher than sapphire (sapphire), lithium aluminum oxide (LAO), Lithium Germanium Oxide (LGO), magnesium aluminum oxide materials such as (AlMgO), for example, various metals such as silicon, gallium nitride, carborundum or copper, aluminium etc.The character of these materials and kind, for those skilled in the art in common knowledge.Be positioned at the protective layer 20 on the substrate 10, comprise by a material that is selected from an alloy, monoxide, mononitride or its combination.The character of protective layer 20 can be divided into conduction or non-conductive; the conductivity protective layer material is metal and alloy, indium tin oxide (ITO), zinc oxide, titanium nitride or titanium tungsten nitride etc. such as Ni, W, Pt, Ti for example; non-conductive property protective layer material, for example polyimides, BCB organic materials such as (bisbenzocyclobutadiene) or inorganic material such as silica, silicon nitride etc.Be positioned at the reflector 30 on this protective layer 20, an electromagnetic wave is had high reflectance, for example metals such as Ag, Al, Rh, Au.The electromagnetic wave of indication preferably includes infrared ray district, visible region and ultraviolet district etc. herein, and reflectivity preferably is higher than more than 90%.Be positioned at the semiconductor conducting layer of one first semiconductor conducting layer 40, a multi layer quantum well structure sheaf 50 or one second semiconductor conducting layer 60 etc. on the reflector 30, can comprise any existing or future in visible person's semi-conducting material, preferred person is III-V (three/five) compound semiconductor, for example aluminum indium gallium nitride (Al
xGa
yIn
1-x-yN), wherein (0≤x≤1,0≤y≤1,0≤x+y≤1), and also mixed by P/N type dopant according to circumstances.The character of these materials and kind, for those skilled in the art in common knowledge.
When setting up the structure of semiconductor element of the present invention, can be prior to setting up the resilient coating of a material such as gallium nitride on the general existing bottom substrate (basesubstrate).Set up again subsequently one second semiconductor conducting layer 60, a multi layer quantum well structure sheaf 50, one first semiconductor conducting layer 40, a reflector 30, with a protective layer 20 after; again selected substrate 10 is based upon on the protective layer 20; and remove the bottom substrate of previous foundation, to finish semiconductor component structure of the present invention.
When protective layer is when conduction, substrate 10 can comprise also that one first electrode, 11, the second semiconductor conducting layers 60 can also comprise one second electrode 61, and first electrode and second electrode be positioned at the homonymy or the heteropleural of semiconductor light-emitting elements, is preferably heteropleural, as shown in Figure 2.Element arrangement like this can make it have less component size, and under identical light-emitting area condition, number of elements increases in theory, and total brightness will increase.
When the character of protective layer when being non-conductive; first semiconductor conducting layer 40 comprises that also one first electrode, 41, the second semiconductor conducting layers 60 also comprise one second electrode 61, and first electrode 41 and second electrode 61 are positioned at the homonymy of semiconductor light-emitting elements; as shown in Figure 3, or heteropleural.If during heteropleural, preferred fabrication passage (channel) makes it conducting.
40 of the reflector 30 in the semiconductor component structure of the present invention and first semiconductor conducting layers can also comprise a transparency conducting layer 70, to increase the luminous efficiency of element.The material of this transparency conducting layer 70 can be little metal of thickness or alloy, for example Ag or Ni/Au or oxide, as indium tin oxide (ITO), zinc oxide, nickel oxide, indium oxide, tin-oxide or sb oxide etc. or nitride, as titanium nitride or titanium tungsten nitride etc.
In addition, between the substrate 10 and protective layer 20 in the semiconductor component structure of the present invention, also can also comprise an adhesive linkage 80, firm in order to guarantee substrate with engaging of heterogeneous (hetro-materials) storerooms such as protective layer.Normally utilization can produce any material that melts bond altogether and reaches this effect, and preferred person is as using elargol, Au/Sn, In/Au or In/Pd etc. forming required adhesive linkage 80, or uses organic material, as polyimides, BCB etc.
If the luminous efficiency that will further promote semiconductor element of the present invention, semiconductor component structure of the present invention be after foundation is finished, can be suitably through the process of a surface coarsening.Reach the method for surface coarsening, can be etching or sandblast (sand-blast).In addition, aforesaid Taiwan letters patent book number 149911 with same Applicant of the present invention is invented the alligatoring semiconductor element that is proposed in " with the method for semiconductor component surfaces alligatoring with the lifting external quantum efficiency ", also lists consideration at this.Usually, behind surface coarsening, can reduce the total reflection of semiconductor element, and then promote the external quantum efficiency of semiconductor element.
In order to ensure the electrical and reliability of semiconductor component structure of the present invention behind the bottom substrate of removing previous foundation, semiconductor component structure of the present invention can be through the processing of an energy waves after foundation is finished.This energy waves is preferably sound wave, microwave or excimer laser light.It is a low temperature process that energy waves is handled, wafer itself absorbs microwave energy does not make wafer itself produce high temperature, so the destruction that can not cause reflector, metal level and transparency conducting layer, and light-emitting component is formed the variation of element, be one neither to destroy whole element itself and form structure repairable elements surface crystallization defective again, further can activate again P/N type semiconductor layer in the semiconductor element electrically, the killing three birds with one stone of can saying so.
Generally believe, utilize the energy waves processing can make semiconductor component surfaces,, repair the crystallinity on surface automatically, recover original characteristic of semiconductor because the crystal defect that is caused in the handling procedure because of absorbing microwave energy, allows the atom on surface move.
The present invention can comprise the following steps: with reference to the structural profile schematic diagram of figure 5A to 5C secondly about a kind of method of making semiconductor light emitting component
(a) provide one first substrate 1, have conductivity and thermal conductivity;
(b) form one first semiconductor conducting layer 62, be positioned on this first substrate;
(c) form a multi layer quantum well structure sheaf 50, be positioned on this first semiconductor conducting layer 62;
(d) form one second semiconductor conducting layer 42, be positioned on this multi layer quantum well structure sheaf 50;
(e) form a reflector 30, be positioned on this second semiconductor conducting layer 42,30 pairs one electromagnetic waves in reflector have high reflectance;
(f) form a protective layer 20, be positioned on the reflector 30, protective layer 20 is made up of a material that is selected from an alloy, monoxide, mononitride or its combination;
(g) form one second substrate 12, be positioned on the protective layer 20, second substrate 12 has conductivity and the thermal conductivity that is higher than first substrate 1; With
(h) remove first substrate 1.
In the method employed first substrate 1 (being aforesaid bottom substrate), second substrate 12 (being aforesaid substrate 10), protective layer 20, reflector 30, first semiconductor conducting layer 62, multi layer quantum well structure sheaf 50, with the character and the kind of each material such as second semiconductor conducting layer 42; know clearly as described above, and repeat no more for those skilled in the art are in common knowledge.
And, can use physical property or chemical polishing, or laser separation process (laser detaching) in order to remove first substrate 1 smoothly.And set up the purpose of protective layer 20, and be in protection reflector 30, make it to avoid inevitably to destroy and injury in the technology.When setting up the structure of semiconductor element of the present invention, can promptly set up the resilient coating of a material such as gallium nitride on first substrate 1 prior to general existing bottom substrate (base substrate) according to preceding method.
Make in the method for semiconductor light emitting component in the present invention, after (d) step, can also comprise: (i) form a transparency conducting layer 70, be positioned on second semiconductor conducting layer 42.Setting up transparency conducting layer 70 can increase the luminous efficiency of element.
In addition, make in the method for semiconductor light emitting component, after (f) step, can also comprise: (i) form an adhesive linkage 80, be positioned on the protective layer 20 in the present invention.Form the purpose of adhesive linkage 80, can guarantee that 20 of second substrate 12 and protective layers wait between dissimilar materials when engaging the mechanical strength on increase composition surface.
And, make in the method for semiconductor light emitting component in the present invention, can also comprise after removing this first substrate: (m) handle this semiconductor light-emitting elements with an energy waves, this energy waves is preferably sound wave, microwave or excimer laser light.Utilize the energy waves processing can allow the atom on surface move, repair the crystallinity on surface automatically, the characteristic of semiconductor original with recovery.
When the protective layer of being set up in (f) step has conduction; first semiconductor conducting layer 62 can also comprise one first electrode 63; second substrate 12 can also comprise one second electrode 13, and first electrode 63 and second electrode 13 be positioned at the heteropleural of semiconductor light-emitting elements, as shown in Figure 6.Element arrangement like this can increase total brightness.
When if (f) protective layer of being set up in the step does not have essence conductivity; first semiconductor conducting layer 62 also comprises one first electrode 63; second semiconductor conducting layer 42 also comprises one second electrode 43, and first electrode 63 and second electrode 43 be positioned at the homonymy of semiconductor light-emitting elements, as shown in Figure 7.
Metal bond (Metal Bonding) blue-ray LED embodiment
First embodiment
With one directly the sapphire of epitaxial growth (epitaxy-ready sapphire) substrate be loaded in the organic metal vapour phase epitaxy growth reacting furnace (herein not showing).This single crystal substrates can be aluminium oxide, carborundum or GaAs material.At first, under 1150 ℃ temperature, with sapphire substrates preheating ten minutes.Then, the temperature of sapphire substrates is reduced to about about 500～600 ℃.When the temperature of sapphire substrates was in 520 ℃, the thickness of growing up in its surface was the gallium nitride resilient coating of 25nm.Then, when the temperature increase to 1100 of sapphire substrates ℃, grow up to a Si (silicon doping of the N type) gallium nitride layer that mixes with the growth speed of about 2 μ m/hr on the surface of resilient coating, its thickness is about 4 μ m.And then, sapphire substrates is cooled to about 820 ℃, one InGaN/gallium nitride (InGaN/GaN) the multi-layer quantum well structure (multiple quantum well structure) of and then on N type silicon-doped gallium nitride laminar surface, growing up.This multi-layer quantum well structure is the usefulness as light-emitting active layer.Afterwards, elevated temperature to 1100 ℃, the P type magnesium doping gallium indium nitride layer of on InGaN/gallium nitride multi layer quantum well body structure surface, growing up, epitaxial LED chip (epi-wafer) so just completes.Earlier at wafer surface evaporation transparency conducting layer indium tin oxide (Indium Tin Oxide), thickness is 2650 then, after 10 minutes, follows reflector argent (silver) on the evaporation through the following 500 ℃ of fusions of the situation of logical nitrogen, and thickness is 2000 .Protective layer indium tin oxide (Indium Tin Oxide) thickness is 3000 .Plate a composition gold (Gold) 18000 of adhesive linkage at last.Wafer and the silicon wafer that plates 25000 indiums are done the surface fit, and placed 200 ℃ of baking boxs interior 2 hours, the weight that adds a 3kg is on bonded wafer, and last natural cooling was determined to take out wafer again to reach room temperature more than one hour.
With energy density 400mJ/cm
2Wavelength 248nm, the excimer laser uniform irradiation of pulse duration 38ns is on sapphire (Sapphire) substrate, and place heating plate to be warming up to 60 ℃ sapphire (Sapphire) substrate is broken away from, define 300 μ m * 300 μ m element size with dry ecthing (dry etching), and plate titanium and aluminium (Ti/Al 600 /2000 ) at N type GaN material, plate titanium and gold (Ti/Au 600 /2000) as Ohmic electrode at silicon substrate.
Second embodiment
Behind embodiment one making epitaxial wafer; metallic nickel on the wafer surface evaporation (Nickel); thickness is less than 50 ; through the situation of logical oxygen following 500 ℃ merge 10 minutes after; follow reflector metallic aluminium (Al) on the evaporation, thickness is 2000 , protective layer TiWN; thickness is 3000 , plates a composition gold (Gold) 18000 of adhesive linkage at last.Wafer and the silicon wafer that plates 25000 indiums are done the surface fit, and placed 200 ℃ of baking boxs interior 2 hours, the weight that adds a 3kg is on bonded wafer, and last natural cooling was determined to take out wafer again to reach room temperature more than one hour.
With energy density 400mJ/cm
2Wavelength 248nm, the excimer laser uniform irradiation of pulse duration 38ns is on sapphire (Sapphire) substrate, and place heating plate to be warming up to 60 ℃ sapphire (Sapphire) substrate is broken away from, define 300 μ m * 300 μ m element size with dry ecthing (dry etching), and at N type GaN material titanizing and aluminium (Ti/Al 600 /2000 ), titanizing and gold on silicon substrate (Ti/Au600 /2000) are as Ohmic electrode.
By the above narration that is regarded as the preferred specific embodiment of the present invention at present, hope can be known description feature of the present invention and spirit more.Yet, the non-restriction of above disclosed preferred specific embodiment for institute of the present invention desire protection category.On the contrary, the change arrangement of aforesaid explanation and various isotropisms thereof is all the protection category that the present invention desires to be subjected to.Therefore the category of claim of the present invention should be done the broadest explanation according to above-mentioned explanation, contain simultaneously claim described with and all may be impartial in fact change and impartial arrangements.
Claims (14)
1, a kind of semiconductor light-emitting elements comprises:
One substrate has conductivity and thermal conductivity;
One protective layer is positioned on this substrate, and this protective layer comprises by a material that is selected from an alloy, monoxide, mononitride or its combination and being formed;
One reflector is positioned on this protective layer, and an electromagnetic wave is had high reflectance;
One first semiconductor conducting layer is positioned on this reflector;
One multi layer quantum well structure sheaf is positioned on this first semiconductor conducting layer; With
One second semiconductor conducting layer is positioned on this multi layer quantum well structure sheaf.
2, semiconductor light-emitting elements as claimed in claim 1 wherein also comprises a transparency conducting layer between this reflector and this first semiconductor conducting layer.
3, semiconductor light-emitting elements as claimed in claim 1 wherein also comprises an adhesive linkage between this substrate and this protective layer.
4, semiconductor light-emitting elements as claimed in claim 1, wherein this protective layer has conductivity.
5, semiconductor light-emitting elements as claimed in claim 4, wherein this substrate also comprises one first electrode, this second semiconductor conducting layer also comprises one second electrode, and this first electrode and this second electrode are positioned at the heteropleural of this semiconductor light-emitting elements.
6, semiconductor light-emitting elements as claimed in claim 1, wherein this first semiconductor conducting layer also comprises one first electrode, this second semiconductor conducting layer also comprises one second electrode, and this first electrode and this second electrode are positioned at the same side of this semiconductor light-emitting elements.
7, semiconductor light-emitting elements as claimed in claim 1 is through the processing of an energy waves.
8, a kind of method of making semiconductor light emitting component comprises the following steps:
(a) provide one first substrate;
(b) form one first semiconductor conducting layer, be positioned on this first substrate;
(c) form a multi layer quantum well structure sheaf, be positioned on this first semiconductor conducting layer;
(d) form one second semiconductor conducting layer, be positioned on this multi layer quantum well structure sheaf;
(e) form a reflector, be positioned on this second semiconductor conducting layer, this reflector has high reflectance to an electromagnetic wave;
(f) form a protective layer, be positioned on this reflector, this protective layer is made up of a material that is selected from an alloy, monoxide, mononitride or its combination;
(g) form one second substrate, be positioned on this protective layer, this second substrate has conductivity and the thermal conductivity that is higher than this first substrate; With
(h) remove this first substrate.
9, method as claimed in claim 8 wherein also comprises after this (d) step:
(i) form a transparency conducting layer, be positioned on this second semiconductor conducting layer.
10, method as claimed in claim 8 wherein also comprises after this (f) step:
(j) form an adhesive linkage, be positioned on this protective layer.
11, method as claimed in claim 8, wherein this protective layer does not have conductivity.
12, method as claimed in claim 8 also comprises:
(k) form one first electrode on this first semiconductor conducting layer, and form one second electrode on this second substrate, wherein this first electrode and this second electrode are positioned at the heteropleural of this semiconductor light-emitting elements.
13, method as claimed in claim 11 also comprises:
(l) form one first electrode on this first semiconductor conducting layer, and form one second electrode on this second semiconductor conducting layer, wherein this first electrode and this second electrode are positioned at the same side of this semiconductor light-emitting elements.
14, method as claimed in claim 8 also comprises:
(m) handle this semiconductor light-emitting elements with an energy waves.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100849217A CN100517775C (en) | 2004-10-10 | 2004-10-10 | Semiconductor light-emitting componnoet with brightness increasing and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100849217A CN100517775C (en) | 2004-10-10 | 2004-10-10 | Semiconductor light-emitting componnoet with brightness increasing and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1758449A true CN1758449A (en) | 2006-04-12 |
| CN100517775C CN100517775C (en) | 2009-07-22 |
Family
ID=36703718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100849217A Active CN100517775C (en) | 2004-10-10 | 2004-10-10 | Semiconductor light-emitting componnoet with brightness increasing and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100517775C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101821861B (en) * | 2007-10-12 | 2012-02-01 | 新加坡科技研究局 | Fabrication of phosphor free red and white nitride-based LEDs |
| CN108133986A (en) * | 2017-11-27 | 2018-06-08 | 北京灵犀微光科技有限公司 | Light emitting diode and lighting device |
-
2004
- 2004-10-10 CN CNB2004100849217A patent/CN100517775C/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101821861B (en) * | 2007-10-12 | 2012-02-01 | 新加坡科技研究局 | Fabrication of phosphor free red and white nitride-based LEDs |
| CN108133986A (en) * | 2017-11-27 | 2018-06-08 | 北京灵犀微光科技有限公司 | Light emitting diode and lighting device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100517775C (en) | 2009-07-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1132253C (en) | Blue light emitting device and production method thereof | |
| CN1220286C (en) | Nitride base semiconductor illuminating device and mfg. method thereof | |
| CN1770492A (en) | Iii-v group compound semiconductor light emitting device and manufacturing method thereof | |
| CN1925177A (en) | Semiconductor luminescent device, structure unit and manufacturing method | |
| CN1761077A (en) | Light emitting device of III-V group compound semiconductor and fabrication method therefor | |
| CN1993837A (en) | Positive electrode for semiconductor light-emitting device | |
| CN100347866C (en) | Light emitting diodes including barrier layers/sublayers and manufacturing methods therefor | |
| CN1667849A (en) | Light emitting element and manufacturing method thereof | |
| CN1759491A (en) | Semiconductor light emitting device and manufacturing method thereof | |
| CN1719634A (en) | Nitride-based compound semiconductor light emitting device and fabricating method thereof | |
| CN1941437A (en) | Gallium nitride based semiconductor light emitting diode and method of manufacturing the same | |
| CN102916098B (en) | LED crystal particle and preparation method thereof | |
| CN1770489A (en) | Migration-proof light-emitting semiconductor device and method of fabrication | |
| CN1622348A (en) | Thin-film electrode, gallium nitride base optical device and method of manufacturing the same | |
| CN1744337A (en) | Nitride-based compound semiconductor light emitting device | |
| CN1617365A (en) | Nitride-based light-emitting device and method of manufacturing the same | |
| CN1638155A (en) | Top-emitting nitride-based light emitting device and method of manufacturing the same | |
| WO2007123355A1 (en) | Method for forming metal electrode, method for manufacturing semiconductor light emitting elements and nitride based compound semiconductor light emitting elements | |
| CN109301042B (en) | LED chip with vertical structure and manufacturing method thereof | |
| US20060054919A1 (en) | Light-emitting element, method for manufacturing the same and lighting equipment using the same | |
| JP6462029B2 (en) | Method for bonding a substrate to a semiconductor light emitting device | |
| CN1619853A (en) | Light emitting device and method of manufacturing the same | |
| CN1945860A (en) | Method for preparing LED electrode | |
| CN102299226A (en) | LED (light emitting diode) with vertical structure and manufacturing method thereof | |
| CN1758449A (en) | Semiconductor light-emitting componnoet with brightness increasing and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20060310 Address after: Hsinchu city of Taiwan Province Applicant after: Jingyuan Optoelectronics Co., Ltd. Address before: Hsinchu Science Industrial Park, Taiwan Applicant before: Guolian Photoelectric Science and Technology Co., Ltd. |
|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |